CN101436642A - Piezoelectric device, angular velocity sensor, and method of manufacturing a piezoelectric device - Google Patents
Piezoelectric device, angular velocity sensor, and method of manufacturing a piezoelectric device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 8
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000010408 film Substances 0.000 description 155
- 239000010409 thin film Substances 0.000 description 84
- 230000035882 stress Effects 0.000 description 56
- 238000010438 heat treatment Methods 0.000 description 47
- 230000010287 polarization Effects 0.000 description 23
- 238000013016 damping Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- 230000005684 electric field Effects 0.000 description 14
- 230000006866 deterioration Effects 0.000 description 12
- 238000005562 fading Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910052741 iridium Inorganic materials 0.000 description 8
- 229910052707 ruthenium Inorganic materials 0.000 description 8
- 238000004062 sedimentation Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000002999 depolarising effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000694874 Pseudorhombus Species 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009429 distress Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
A piezoelectric device includes a piezoelectric film and an electrode film. The piezoelectric film is constituted of lead zirconium titanate represented by Pb 1+X (Zr Y Ti 1-Y )O 3+x , where X is 0 or more and 0.3 or less and Y is 0 or more and 0.55 or less, the piezoelectric film having a tension stress. The electrode film applies a voltage to the piezoelectric film.
Description
The cross reference of related application
The theme that Japanese patent application JP 2007-297323 that the present invention is contained in the Japanese patent application JP 2007-297321 that submitted to Japan Patent office on November 15th, 2007, submitted to Japan Patent office on November 15th, 2007 and the Japanese patent application JP 2007-297325 that submits to Japan Patent office on November 15th, 2007 relate to, its full content is incorporated into this by quoting as proof.
Technical field
The present invention relates to be used in piezoelectric element in piezoelectric transducer, piezo-activator and the hot electric infrared sensor, comprise the manufacture method of the angular-rate sensor and the piezoelectric element of this piezoelectric element.
Background technology
Past, lead zirconate titanate (Pb
1+X(Zr
YTi
1-Y) O
3+X) (hereinafter, being called PZT) be used as the piezoelectric that is used for such as the piezoelectric membrane of the first-class piezoelectric transducer of angular-rate sensor, ink-jet.For the piezoelectric property of improving PZT, ferromagnetic material characteristic, pyroelecthc properties etc. (have for example proposed various technology, see Japanese Patent Application Publication Hei 06-350154 number ((0030)～(0044) section, (0060)～(0073) section, Fig. 3, Fig. 4 etc.) and Japanese Patent Application Publication Hei09-298324 number ((0007)～(0009) section, Fig. 5); Hereinafter, will be called patent document 1 and patent document 2).
Patent document 2 discloses a kind ofly to has more than or equal to 1 μ m and smaller or equal to the thickness of 10 μ m, smaller or equal to the grain size of 0.55 μ m and the RMAX piezoelectric membrane smaller or equal to the surface roughness of 1 μ m.This piezoelectric membrane can be used as that be used for need be more than or equal to the piezoelectric membrane of the inkjet type storage device of predetermined film thickness.
Summary of the invention
In addition, well-known, when heating, the piezoelectric property deterioration of piezoelectric, this deterioration is called as depolarising.Yet, because usually in the manufacture process of the electronic installation that comprises piezoelectric, carry out the heat treated of being undertaken, so exist owing to heat the problem of the piezoelectric property deterioration that makes piezoelectric by reflow soldering etc.
Especially in recent years, consider environmental problem and adopt pb-free solder that cause the reflow soldering temperature to increase, and cause the piezoelectric property deterioration of piezoelectric by the thermal conductance that reflow soldering causes, this deterioration is insoluble.Yet above patent document 1 and patent document 2 are not all considered thermal impact.
In addition, also there is a problem: when piezoelectric member has as the described film thickness more than or equal to 1 μ m of patent document 2, cause the possibility of crackle or crystallinity deterioration to increase.Crystalline deterioration also may become owing to the unpolarized reason due to the heat treated.
In view of the foregoing, need a kind of piezoelectric property and excellent heat resistance piezoelectric element, comprise the manufacture method of the angular-rate sensor and the piezoelectric element of this kind piezoelectric element.
According to embodiments of the invention, provide a kind of piezoelectric element that comprises piezoelectric film and electrode film.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and piezoelectric film has tensile stress.Electrode film applies voltage to piezoelectric film.
By the excessive ratio of components X of the PbO of PZT be set to more than or equal to 0 and smaller or equal to 0.3 and Zr ratio of components Y be set to more than or equal to 0 and smaller or equal to 0.55, can obtain the good piezoelectric element of piezoelectric property.If the Zr ratio of components more than or equal to 0 and smaller or equal to 0.55, then is difficult to depolarising take place and can obtain good thermal endurance.
In addition, have tensile stress, can obtain the piezoelectric element that thermal endurance is further improved by making piezoelectric film.
In piezoelectric element according to an embodiment of the invention, the tensile stress of piezoelectric film can be more than or equal to 50MPa and smaller or equal to 500MPa.Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can have more than or equal to 400nm and smaller or equal to the film thickness of 1000nm.
Therefore, can obtain the piezoelectric element that piezoelectric property is further improved.
In piezoelectric element according to an embodiment of the invention, electrode film can have more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa.
Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film is＜111〉direction can have the orientation more than or equal to 80%.
Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can comprise at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
In piezoelectric element according to an embodiment of the invention, electrode film can be by at least a formation the among Ti and the Pt.Electrode film also can be formed by Ir, Au and Ru, and perhaps the oxide by Ti, Pt, Ir, Au and Ru forms.
According to another embodiment of the present invention, provide a kind of piezoelectric element that comprises piezoelectric film and electrode film.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55.Electrode film has more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa and to piezoelectric film and applies voltage.
By the excessive ratio of components X of the PbO of PZT be set to more than or equal to 0 and smaller or equal to 0.3 and Zr ratio of components Y be set to more than or equal to 0 and smaller or equal to 0.55, can obtain the good piezoelectric element of piezoelectric property.If Zr ratio of components Y more than or equal to 0 and smaller or equal to 0.55, then is difficult to depolarising take place and can obtain good thermal endurance.
In addition, have more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa, can obtain the piezoelectric element that thermal endurance is further improved by making electrode film.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can have more than or equal to 400nm and smaller or equal to the film thickness of 1000nm.
Therefore, can obtain the piezoelectric element that piezoelectric property is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can have more than or equal to 50MPa and smaller or equal to the tensile stress of 500MPa.
Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film is＜111〉direction can have the orientation more than or equal to 80%.
Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can comprise at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
In piezoelectric element according to an embodiment of the invention, electrode film can be by at least a formation the among Ti and the Pt.Electrode film also can be formed by Ir, Au and Ru, and perhaps the oxide by Ti, Pt, Ir, Au and Ru forms.
According to another embodiment of the present invention, provide a kind of piezoelectric element that comprises piezoelectric film and electrode film.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, wherein, X more than or equal to 0 and smaller or equal to 0.3 and Y more than or equal to 0 and smaller or equal to 0.55, piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm.Electrode film applies voltage to piezoelectric film.
By the excessive ratio of components X of the PbO of PZT be set to more than or equal to 0 and smaller or equal to 0.3 and Zr ratio of components Y be set to more than or equal to 0 and smaller or equal to 0.55, can obtain the good piezoelectric element of piezoelectric property.If Zr ratio of components Y more than or equal to 0 and smaller or equal to 0.55, then is difficult to depolarising take place and can obtain good thermal endurance.
In addition, be set to more than or equal to 400nm and smaller or equal to 1000nm, can obtain the piezoelectric element that piezoelectric property is further improved by film thickness.
In piezoelectric element according to an embodiment of the invention, piezoelectric film is＜111〉direction can have the orientation more than or equal to 80%.
Therefore, can obtain the piezoelectric element that thermal endurance is further improved.
In piezoelectric element according to an embodiment of the invention, piezoelectric film can comprise at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
In piezoelectric element according to an embodiment of the invention, electrode film can be by at least a formation the among Ti and the Pt.Electrode film also can be formed by Ir, Au and Ru, and perhaps the oxide by Ti, Pt, Ir, Au and Ru forms.
According to another embodiment of the present invention, provide a kind of angular-rate sensor that comprises substrate, first electrode film, piezoelectric film and second electrode film.First electrode film is formed on the substrate.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and piezoelectric film has tensile stress and is formed on first electrode film.Second electrode film is formed on the piezoelectric film.
According to another embodiment of the present invention, provide a kind of angular-rate sensor that comprises substrate, first electrode film, piezoelectric film and second electrode film.First electrode film has more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa and be formed on the substrate.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and piezoelectric film is formed on first electrode film.Second electrode film is formed on the piezoelectric film.
According to another embodiment of the present invention, provide a kind of angular-rate sensor that comprises substrate, first electrode film, piezoelectric film and second electrode film.First electrode film is formed on the substrate.Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm, and is formed on first electrode film.Second electrode film is formed on the piezoelectric film.
According to embodiments of the invention, can provide piezoelectric property and excellent heat resistance piezoelectric element, comprise the manufacture method of the angular-rate sensor and the piezoelectric element of this kind piezoelectric element.
As shown in drawings, to the detailed description of the embodiment of best mode, these and other objects of the present invention, feature and advantage will be more apparent according to hereinafter.
Description of drawings
Fig. 1 is the piezoelectric element and the diagrammatic sketch that comprises the angular-rate sensor of this piezoelectric element that illustrates according to the first embodiment of the present invention;
Fig. 2 is the diagrammatic sketch of XRD (X-ray diffraction) figure that pzt thin film is shown;
Fig. 3 is film thickness that pzt thin film is shown (100nm～1400nm) and the diagrammatic sketch of the relation between the piezoelectric constant d31;
Fig. 4 illustrates the excessive ratio of components X of PbO (0.1～0.5) of pzt thin film and the diagrammatic sketch of the relation of piezoelectric constant d31 and loss late tan δ;
Fig. 5 illustrates the Zr ratio of components Y (0.35～0.65) of pzt thin film and the diagrammatic sketch of the relation between the piezoelectric constant d31;
Fig. 6 illustrates the Zr ratio of components Y (0.35～0.7) of pzt thin film and the diagrammatic sketch of the relation between the attenuation rate of shaker arm after heating;
Fig. 7 illustrates heating time and is set to the diagrammatic sketch of the relation between the amplitude damping factor after the heating under 240 ℃ the situation in heating-up temperature;
Fig. 8 is the diagrammatic sketch that the relation between heating-up temperature and the amplitude damping factor after heating is shown;
Fig. 9 is stress that pzt thin film is shown (100MPa～600MPa) and the diagrammatic sketch that concerns between the amplitude damping factor after heating;
Figure 10 is stress that first electrode film is shown (500MPa～2000MPa) and the diagrammatic sketch of the relation between the amplitude damping factor after applying heat;
Figure 11 illustrates PZT＜111〉diagrammatic sketch that concerns between the amplitude damping factor of the degree of orientation of face direction and the shaker arm after heating;
Figure 12 is illustrated in ratio (the coercive electric field E of the polarizing voltage of polarization in handling with respect to coercive electric field
c1～20 times) and the amplitude damping factor of shaker arm after heating between the diagrammatic sketch of relation;
Figure 13 illustrates the withstand voltage of pzt thin film with respect to the ratio of coercive electric field and the diagrammatic sketch of the relation between the polarization temperature;
Figure 14 is illustrated in ratio (the Curie temperature T of the polarization temperature of polarization in handling with respect to Curie temperature
C1/16～5/4 times) and the amplitude damping factor after heating between the diagrammatic sketch of relation;
Figure 15 illustrates ratio (the Curie temperature T of prebake temperature with respect to Curie temperature
C1/2～5/4 times) with amplitude damping factor and prebake after heating after/the back diagrammatic sketch of the relation of amplitude damping factor of polarization;
Figure 16 is the plan view that angular-rate sensor according to a second embodiment of the present invention is shown;
Figure 17 is the schematic representation of angular-rate sensor shown in Figure 16; And
Figure 18 is the sectional view that the line A-A along Figure 16 is done.
Embodiment
Hereinafter, embodiments of the invention are described with reference to the accompanying drawings.
(first embodiment)
At first, the first embodiment of the present invention will be described.Fig. 1 is the piezoelectric element and the diagrammatic sketch that comprises the angular-rate sensor of this piezoelectric element that illustrates according to the first embodiment of the present invention.
Angular-rate sensor 31 comprises matrix 130 and extends and vibratile shaker arm 132 from matrix 130.Figure 1B is the sectional view on the surface vertical with the longitudinal axis (Z axle) of shaker arm 132.
Angular-rate sensor 31 for example comprises the semiconductor arm substrate 133 of being made by silicon and is arranged on piezoelectric element 139 in the arm substrate 133.Shown in Figure 1B, for example, on silicon substrate lamination as the first electrode film 34a of common electrode, and on the first electrode film 34a lamination piezoelectric film 33.On first surface 33a, form each the second electrode film 34b that all has predetermined elongated shape, the first detecting electrode 34c and second detecting electrode 34d as the upper surface of piezoelectric film 33.
In addition, on matrix 130, form the lead electrode that comprises lead-in wire 136, battery lead plate 138, boss 134a～134d etc.Boss 134a is connected to the second electrode film 34b, and boss 134b and 134c are connected to the first detecting electrode 34c and the second detecting electrode 34d respectively, and boss 134d is connected to the first electrode film 34a.Be connected to control circuit (not shown) via boss 134a～134d outside such as IC.For example, boss 134a～134d forms by metal, but is not limited in this.
Be formed as described above after the first electrode film 34a, the second electrode film 34b, the first detecting electrode 34c, the second detecting electrode 34d, the lead-in wire 136 etc., from the angular-rate sensor 31 of silicon wafer cutter just like the shape shown in Figure 1A.
Next, will the representative instance of the operation of angular-rate sensor 31 be described.
The first electrode film 34a of piezoelectric element 139 is connected to the DC power supply, and connects AC power supplies between the first electrode film 34a and the second electrode film 34b.Therefore, voltage is imposed on the piezoelectric film 33 that is arranged between the first electrode film 34a and the second electrode film 34b, thereby make shaker arm 132 make bending motion in vertical direction (Y direction).
When during bending motion with angular velocity omega
0Impose on shaker arm 132, generate Coriolis force at shaker arm 132.Generate Coriolis force along the direction (directions X) vertical, its size and the angular velocity omega that applies with the direction (Y direction) of the bending motion of shaker arm 132
0Value proportional.By piezoelectric film 33 Coriolis force is converted to the signal of telecommunication, and detects the signal of conversion by the first detecting electrode 34c and the second detecting electrode 34d.
Next, the piezoelectric property and the heat resistance of piezoelectric element 139 will be described in the manufacture method of describing angular-rate sensor 31.Should be noted that and mainly to be described the formation method that is formed on the piezoelectric element 139 in the arm substrate 133.
Get silicon wafer at first, in advance ready.Can on silicon wafer, form protective oxide layer by thermal oxidation.
For example, form the first electrode film 34a, then, deposit the Pt of 100nm thereon by the Ti that uses sputtering method on silicon wafer, to deposit 30nm.The sedimentation of the first electrode film 34a is not limited in sputtering method, but also can use vaccum gas phase sedimentation method or other sedimentations.In addition, the metal material that constitutes the first electrode film 34a is not limited in Ti and Pt, and the example also comprises Ir, Au and Ru, perhaps the oxide of Ti, Pt, Ir, Au and Ru.The second electrode film 34b also can be made of these metal materials.
Subsequently, form piezoelectric film 33 by for example using sputtering method on the first electrode film 34a, to form pzt thin film.The sedimentation of piezoelectric film 33 is not limited in sputtering method, but also can use such as vaccum gas phase sedimentation method, PLD (pulsed laser deposition) method, sol-gel process, aerosol deposition method etc.Substrate temperature during deposition pzt thin film 33 can be room temperature or high temperature.
In the deposition of pzt thin film 33, the excessive ratio of components X of PbO is set to more than or equal to-0.1 and smaller or equal to 0.5, and Zr ratio of components Y is set to more than or equal to 0.35 and smaller or equal to 0.65.In order to realize this PZT ratio of components, target composition, sputtering condition, annealing conditions etc. are set suitably.On the first electrode film 34a, form after the pzt thin film 33, in order to increase the perovskite structure of PZT, for example, can be with pzt thin film 33 700 ℃ of following heat treated.In this case, the crystal structure of pzt thin film 33 is a tetragonal.
The film thickness of the pzt thin film 33 of Xing Chenging is 100nm～1400nm as mentioned above.
After forming pzt thin film 33, on pzt thin film 33, deposit the Pt of 200nm by sputtering method, so form the second electrode film 34b.The sedimentation of the second electrode film 34b in this case is not limited to sputtering method, also can use vaccum gas phase sedimentation method or other sedimentations.
Next, in being heated to 240 ℃ air, voltage is applied between the first electrode film 34a and the second electrode film 34b, and on pzt thin film 33, carries out polarization and handle.The voltage that is applied between the first electrode film 34a and the second electrode film 34b is coercive electric field E
C1～20 times.In addition, compare with Curie temperature, the polarization temperature in polarization is handled is 1/16～5/4 Curie temperature.Should be noted that polarizes handles and can carry out under any one atmosphere in air, oxygen atmosphere and blanket of nitrogen.
After polarization is handled, on the pzt thin film 33 of deposition, carry out prebake and handle.The prebake temperature that prebake is handled is 1/2～5/4 Curie temperature.
Above-mentioned pzt thin film 33 can have tensile stress.In order to make pzt thin film 33 have tensile stress, pzt thin film 33 can carry out heat treated with it after forming under for example 650 ℃～750 ℃ on the first electrode film 34a.Therefore, the crystallization of pzt thin film 33 is quickened, thereby has obtained tensile stress.In addition, in this case, target composition, sputtering condition, annealing conditions etc. are set suitably, for example, make the excessive ratio of components X of PbO of PZT become 0.04, its Zr ratio of components Y becomes 0.35～0.65, and tensile stress becomes-100MPa～600MPa.
In addition, the first above-mentioned electrode film 34a also can have tensile stress.In order to make the first electrode film 34a have tensile stress, on the first electrode film 34a, form after the pzt thin film 33, first electrode film 33 can be carried out heat treated under for example 100 ℃～800 ℃.Perhaps, also can not after the deposition of the first electrode film 34a and pzt thin film 33, but between depositional stage, carry out heat treated, make the electrode film 34a that wins have tensile stress.By changing sedimentary condition, heat treated condition etc., can make the first electrode film 34a have the tensile stress of wide region.The tensile stress of the first electrode film 34a of Xing Chenging is-200MPa～2000MPa as mentioned above.
(evaluation of piezoelectric property)
Next, will the piezoelectric property that so is formed on the piezoelectric element 139 on the silicon wafer be described.
Fig. 2 is the diagrammatic sketch of XRD (X-ray diffraction) figure that pzt thin film 33 is shown.PZT orientation is to＜111〉face and have a degree of orientation of 97%.In Fig. 2, the film thickness of having measured the pzt thin film 33 of its XRD figure is 900nm, and the voltage that is used in the polarization processing is 6 times of coercive electric field, and the temperature that polarizes is 240 ℃.In addition, prebake temperature is 200 ℃ of lasting 100s.
Should be noted that except as otherwise noted, otherwise the film thickness of pzt thin film 33 is 900nm in the following description that accompanying drawing is done.
Fig. 3 is film thickness that pzt thin film 33 is shown (100nm～1400nm) and the diagrammatic sketch of the relation between the piezoelectric constant d31.As shown in Figure 3, when film thickness was 400nm～1000nm, pzt thin film 33 had demonstrated good piezoelectric property.Therefore, when in the scope of film thickness at 400nm～1000nm, can obtain piezoelectric element 139 sufficient piezoelectric properties for angular-rate sensor 31.
When the film thickness of pzt thin film 33 during more than or equal to 1000nm, piezoelectric constant d31 reduces.This may be because when film thickness during more than or equal to 1000nm, crystal is being different from＜111〉face direction (for example:＜001〉the face direction) grow, therefore, the peak intensity of＜111〉face directions is saturated.Therefore, the film thickness by pzt thin film 33 is set to less than 1000nm, can suppress to be different from＜the peak growth of 111〉face directions.Should be noted that it mainly is that the main peak of crystal is given piezoelectric property.
Simultaneously, cause leakage current to increase, thereby becoming is difficult to obtain for piezoelectric element 139 sufficient piezoelectric properties less than the film thickness of 400nm.
Fig. 4 illustrates the excessive ratio of components X of PbO (0.1～0.5) of pzt thin film 33 and the diagrammatic sketch of the relation of piezoelectric constant d31 and loss late tan δ.Pzt thin film 33＜111〉face directions the degree of orientation be more than or equal to 80% and less than 100%, and Zr ratio of components Y is 0.5.
As can be seen from Figure 4, when in the scope of the excessive ratio of components X of PbO 0～0.3, piezoelectric constant d31 and loss late tan δ are good.When the excessive ratio of components X of PbO less than 0 the time, the piezoelectric property deterioration.This may be because when the excessive ratio of components X of PbO is very little, PZT crystallinity deterioration.On the other hand, when the excessive ratio of components X of PbO more than or equal to 0.3 the time, loss late tan δ increases and the piezoelectric property deterioration.This may be because when the excessive ratio of components X of PbO is big, and therefore the insulation characterisitic deterioration of pzt thin film 33 causes piezoelectric property to reduce.
Fig. 5 illustrates the Zr ratio of components Y (0.35～0.65) of pzt thin film 33 and the diagrammatic sketch of the relation between the piezoelectric constant d31.As shown in Figure 5, when Zr ratio of components Y was 0.51, pzt thin film 33 demonstrated maximum piezoelectric property, and when Zr ratio of components Y more than or equal to 0.4 and smaller or equal to 0.55 the time, demonstrate good piezoelectric property.As long as Zr ratio of components Y more than or equal to 0.4 and smaller or equal to 0.55, just can obtain the piezoelectric element 139 sufficient piezoelectric properties for angular-rate sensor 31.
By the way, well-known, when its Zr ratio of components Y more than or equal to 0.5 and smaller or equal to 0.53 the time, a large amount of PZT demonstrate good piezoelectric property.Yet, when Zr ratio of components Y becomes less than 0.5 the time, the rapid deterioration of piezoelectric property of a large amount of PZT.On the other hand, as shown in Figure 5, even when Zr ratio of components Y more than or equal to 0.4 and smaller or equal to 0.5 the time, also demonstrate good piezoelectric property by for example pzt thin film of sputtering method deposition.
(stable on heating evaluation)
Next, will describe stable on heating evaluation, but at first, will be described the thermal endurance evaluation method.
From the silicon wafer cutter that formed the piezoelectric element 139 that comprises the first electrode film 34a, pzt thin film 33 and the second electrode film 34b, lead-in wire 136 etc. angular-rate sensor 31 just like the shape shown in Figure 1A.Usually adopt MEMS (microelectromechanical systems) technology cutting silicon.The length, width and the thickness that should be noted that shaker arm 132 are respectively for example 2000 μ m, 150 μ m and 150 μ m.
The shaker arm 132 of the angular-rate sensor 31 by measuring formation like this is estimated thermal endurance at the amplitude of Y direction.Particularly, by the amplitude of measuring vibrations arm 132 in the Y direction, apply the heat of having considered the heat treated (for example reflow soldering) when making element to pzt thin film 33, after this, measuring vibrations arm 132 is estimated the thermal endurance of piezoelectric element 139 at the amplitude of Y direction once more.Should be noted that the heat treated of considering when making element, be 180 ℃～300 ℃ to the heating-up temperature of pzt thin film 33, and is 30s～300s its heating time.In addition, the voltage that is applied between the first electrode film 34a and the second electrode film 34b is for example 1kHz, the AC voltage of 1V.
Fig. 6 illustrates the Zr ratio of components Y (0.35～0.7) of pzt thin film 33 and the diagrammatic sketch of the relation between the attenuation rate of shaker arm 132 after the heating.Are respectively heating-up temperature and heating time 240 ℃ and 90s.
As can be seen from Figure 6, when Zr ratio of components Y surpasses 0.55, the decay of the amplitude of the shaker arm 132 after heating increase, however be difficult to observe its decay smaller or equal to 0.55 the time as Zr ratio of components Y.In other words, the pzt thin film 33 that has smaller or equal to 0.55 Zr ratio of components Y has good thermal endurance.
Fig. 7 is the diagrammatic sketch that the relation between heating time and heating (heating-up temperature the is set to 240 ℃) amplitude damping factor afterwards is shown.The Zr ratio of components Y of pzt thin film 33 is in 0.35～0.60 scope.As can be seen from Figure 7, when Zr ratio of components Y smaller or equal to 0.55 the time, even when prolonging heating time, the amplitude fading after the heating also is difficult to take place, and this means good thermal endurance.
Fig. 8 is the diagrammatic sketch that the relation between heating-up temperature and the amplitude damping factor after heating is shown.The Zr ratio of components Y of pzt thin film 33 is in 0.35～0.60 scope.As can be seen from Figure 8, when Zr ratio of components Y smaller or equal to 0.55 the time, even when increase heating time, the amplitude fading after the heating also is difficult to take place, and this means good thermal endurance.
Fig. 9 is stress that pzt thin film 33 is shown (100MPa～600MPa) and the diagrammatic sketch of the relation between the amplitude damping factor after heating.In this case, the tensile stress of the first electrode film 34a is 1000MPa.In addition, are respectively the heating-up temperature of pzt thin film 33 and heating time 240 ℃ and 90s.Should be noted that in Fig. 9 positive stress value is represented tensile stress, and negative stress value is represented compression stress.
Now, will the method for measuring stress of pzt thin film 33 be described.X-ray reciprocal lattice figure method of measurement is used as the method for measuring stress of pzt thin film 33, and uses X-ray diffraction device X ' pert PRO MRD (registered trade mark) from PANalytical (registered trade mark) as measurement mechanism.In the reciprocal lattice diagram technology, vertical with the θ axle
Near the inclination measurement target sample axle, and detection is from the diffraction of the plane of crystal of sample.Carry out the identification of measurement target sample based on detected diffraction maximum.
For example, in the crystal of measurement target sample, do not exist under the distortion or the situation of stress, for PZT＜111 the main orientation peak of diffraction (
Near), arbitrarily
The change that the place, angle can not produce the angle of diffraction.Yet, in the measurement target sample, exist under the situation of tensile stress, when
The time the angle of diffraction than working as
The time the angle of diffraction bigger in the skew of low angle side.On the other hand, in the measurement target sample, exist under the situation of compression stress, when
The time the angle of diffraction than working as
The time the angle of diffraction bigger in the skew of wide angle side.By estimating bias size, can measure the stress of pzt thin film 33.
The method for measuring stress of pzt thin film 33 is not limited in X ray reciprocal lattice figure method of measurement, also can use other method to replace.For example, as below with reference to described in the file, after measurement has deposited the warpage of substrate of film, can estimate stress value (reference paper: by using Stoney formula (Stoney Expression) by HiroshiIchimura, Masaru Ikenaga, THE NIKKAN KOGYO SHIMBUN, " the Basics and Application of Thin Films by a Plasma Process " that LTD. showed, 2005).In order to measure the stress necessary Young's modulus of deriving, for example,, use the nano impress method as described in the reference.X ray reciprocal lattice figure mensuration, also be used as the mensuration of the first electrode film 34a that describes after a while at the mensuration described in the reference paper etc.
As shown in Figure 9, when the tensile stress of pzt thin film 33 during more than or equal to 50MPa and smaller or equal to 500MPa, the amplitude after heating is not decayed.In other words, the pzt thin film 33 with tensile stress of 50MPa～500MPa has good thermal endurance.Especially, the pzt thin film 33 with tensile stress of 100MPa～300MPa has good thermal endurance.
When making it have tensile stress in the above-mentioned scope, the reason that pzt thin film 33 has good heat resistance is the distortion of lattice of PZT thereby the motion that has suppressed the farmland.
As shown in Figure 9, when the tensile stress of pzt thin film 33 surpasses 500MPa, the amplitude fading after the heating.This may be to increase because of the stress guide fracturing line owing to pzt thin film 33, and has therefore eliminated the distortion of lattice.On the other hand, when tensile stress during less than 50MPa, the amplitude fading after the heating.This may be because, because the low stress of pzt thin film 33 makes and do not have distortion in lattice, so that the farmland move easily.
Figure 10 is stress that the first electrode film 34a is shown (500MPa～2000MPa) and the diagrammatic sketch of the relation between the amplitude damping factor after heating.In this case, the tensile stress of pzt thin film 33 is 200MPa.In addition, are respectively the heating-up temperature of pzt thin film 33 and heating time 240 ℃ and 90s.
As shown in figure 10, when the tensile stress of the first electrode film 34a during more than or equal to 500MPa and smaller or equal to 1500MPa, the amplitude after heating is not decayed.In other words, as can be seen, comprise that the piezoelectric element 139 of the first electrode film 34a of the tensile stress with 500MPa～1500MPa has good thermal endurance.Especially, may find out that when the first electrode film 34a had the tensile stress of 700MPa～1200MPa, the pzt thin film 33 that is formed on the first electrode film 34a had good thermal endurance.
When making the first electrode film 34a have tensile stress in above-mentioned scope, the reason that piezoelectric element 139 has good heat resistance is that the tensile stress of the first electrode film 34a makes the distortion of lattice of pzt thin film 33 to suitable degree, has therefore suppressed the motion on farmland.
When the tensile stress of the first electrode film 34a surpasses 1500MPa, the amplitude fading after heating.This may be because the tensile stress of the first electrode film 34a makes the crackle of pzt thin film 33 increase, and has therefore eliminated the distortion of lattice.In this case, in fact observed lip-deep crackle at pzt thin film 33.In addition, between having, observed and peeled off greater than the first electrode film 34a of the tensile stress of 1500MPa and arm substrate 133.
On the other hand, when the tensile stress of the first electrode film 34a during less than 500MPa, the amplitude after heating has also been decayed.This may be because, because the low stress of the first electrode film 34a makes and do not have distortion in lattice, lattice so that the farmland move easily.
Figure 11 illustrates PZT＜111〉diagrammatic sketch of relation between the amplitude damping factor of the degree of orientation of face direction and the shaker arm 132 after heating.Excessive ratio of components X of the PbO of pzt thin film 33 and Zr ratio of components Y are respectively 0.04 and 0.48.As can be seen from Figure 11, when PZT＜111 the degree of orientation of face direction greater than 80% the time, be difficult to after the heating amplitude fading takes place, this means good thermal endurance.On the other hand, as can be seen, when PZT＜111 the degree of orientation of face direction less than 80% the time, amplitude fading takes place after the heating easily.
Next, will concern between treatment conditions and the prebake condition and be described with polarizing the amplitude damping factor of the shaker arm 132 after the heating.Should be noted that in following description excessive ratio of components X of the PbO of pzt thin film 33 and Zr ratio of components Y are respectively 0.04 and 0.48 to Figure 12～Figure 15.And, are respectively the heating-up temperature of pzt thin film 33 and heating time 240 ℃ and 90s.
Figure 12 is illustrated in ratio (the coercive electric field E of the polarizing voltage of polarization in handling with respect to coercive electric field
C1～20 times) and the amplitude damping factor of shaker arm 132 after heating between the diagrammatic sketch of relation.As shown in figure 12, when polarizing voltage be a times coercive electric field E
C2～20 o'clock, amplitude fading be difficult to take place after the heating, this means good thermal endurance.Figure 13 illustrates the withstand voltage of pzt thin film 33 with respect to the ratio of coercive electric field and the relation between the polarization temperature.As shown in figure 13, the withstand voltage that causes PZT of increasing of polarization temperature reduces with respect to the ratio of coercive electric field.When will impose on PZT more than or equal to the polarizing voltage of 20 times coercive electric field under more than or equal to 180 ℃ polarization temperature the time, the dielectric breakdown of PZT takes place.Therefore, as can be seen, will be more than or equal to 20 times coercive electric field E
CPolarizing voltage to impose on PZT be inappropriate, and suitable polarizing voltage is coercive electric field E
C2～20 times voltage.
Figure 14 is illustrated in ratio (the Curie temperature T of the polarization temperature of polarization in handling with respect to Curie temperature
C1/16～5/4) and the amplitude damping factor after heating between the diagrammatic sketch of relation.As shown in figure 14, as the Curie temperature T of temperature that polarize more than or equal to 1/4
CAnd smaller or equal to Curie temperature T
CThe time, be difficult to after the heating amplitude fading takes place, this means good thermal endurance.As the Curie temperature T of temperature that polarize less than 1/4
CThe time, the reason that amplitude fading is bigger may be because handle the motion on the farmland that has suppressed pzt thin film 33 owing to inadequate polarization.On the other hand, surpass Curie temperature T when the polarization temperature
CThe time, the reason that amplitude fading is bigger may be because, because the cubic crystal structure of pzt thin film 33 makes the farmland move easily after polarization is handled.
Figure 15 be illustrate prebake temperature T a with respect to behind the ratio of Curie temperature (Curie temperature Tc 1/2～5/4) and the amplitude damping factor (transverse axis and the right-hand side longitudinal axis) and prebake after heating/diagrammatic sketch of the relation of amplitude damping factor (transverse axis and the left-hand side longitudinal axis) afterwards polarizes.
Particularly, in Figure 15, the amplitude by measuring vibrations arm 132 after handling in polarization and prebake handle (1/2～5/4 Curie temperature Tc) afterwards once more the amplitude of measuring vibrations arm 132 (transverse axis and the left-hand side longitudinal axis) estimate amplitude damping factor in prebake is handled.After this, the heat of having considered the heat treated when the manufacturing installation is imposed on pzt thin film 33 after prebake is handled, measure the amplitude of the shaker arm 132 after heating, measure the amplitude damping factor (transverse axis and the right-hand side longitudinal axis) after heating thus.Should be noted that polarizing voltage is coercive electric field E
C6 times, and the polarization temperature be 260 ℃.
As shown in figure 15, as can be seen, when prebake temperature T a smaller or equal to 3/4 Curie temperature T
CThe time, the amplitude of shaker arm 132 is not decayed with the same after polarization is handled after prebake is handled.In addition, as can be seen, when prebake temperature T a more than or equal to 1/4 Curie temperature T
CThe time, the amplitude after heating is the same with amplitude after polarization is handled not to be had to decay, and this shows that piezoelectric element 139 has good thermal endurance.Therefore, be set to Curie temperature T by the prebake temperature T a in prebake is handled more than or equal to 1/4
CAnd Curie temperature T smaller or equal to 3/4
C, just can obtain to have the piezoelectric element 139 of excellent heat resistance.
(second embodiment)
Next, second embodiment of the present invention will be described.
Figure 16 is the plan view that illustrates according to angular-rate sensor of the present invention.In addition, Figure 17 is the schematic representation according to the angular-rate sensor of present embodiment, and Figure 18 is the sectional view that the line A-A along Figure 16 is done.
As shown in the figure, angular-rate sensor 200 comprises matrix 214, is arranged on the arm maintaining part 215 on the side of matrix 214 and is arranged on vibration arm 216 on the end side of arm maintaining part 215.
The vibration arm 216 comprise first shaker arm 211, second shaker arm 212 and the 3rd shaker arm 213, the first shaker arms 211 after between the two.First shaker arm 211 is made of arm substrate 210a and the piezoelectric element 239a that forms thereon, second shaker arm 212 is made of arm substrate 210b and the piezoelectric element 239b that forms thereon, and the 3rd shaker arm 213 is made of arm substrate 210c and the piezoelectric element 239c that forms thereon.In other words, the angular-rate sensor 200 according to present embodiment is so-called three tuning-fork-type angular-rate sensors.
For example, first to the 3rd shaker arm 211～213 has identical width and thickness.In addition, the gap between first shaker arm 211 and second shaker arm 212 is identical with gap between first shaker arm 211 and the 3rd shaker arm 213.
As shown in figure 18, on arm substrate 210a～210c, form first electrode film 221～223 respectively, on first electrode film 221～223, form all pzt thin film 231～233 respectively as piezoelectric film.In addition, on pzt thin film 231～233, form all second electrode film 241～243 respectively as drive electrode.In addition, on the piezoelectric membrane 231 of first shaker arm 211 of the centre of vibration arm 216, form first detecting electrode 251 and second detecting electrode 252.
All identical with according to the pzt thin film 33 of first embodiment of excessive ratio of components X of the PbO of pzt thin film 231～233 film thickness separately and PZT and Zr ratio of components Y.In addition, pzt thin film 231～233 all has the tensile stress with pzt thin film 33 pars.In addition, first electrode film 221～223 also has the tensile stress with the first electrode film 34a par of first embodiment.
The a plurality of electrodes 221～223,241～243,251 and 252 that are included in each piezoelectric element 239 are connected to lead-in wire 261～268 respectively.Lead-in wire 261～268 passes the surface of arm maintaining part 215 to be connected to the lip-deep lead terminal 271～278 that is arranged on matrix 214 respectively.Lead terminal 271～278 is provided with four on the both sides of the lip-deep directions X of matrix 214.
Next, with the operation of describing according to the angular-rate sensor 200 of present embodiment.
When voltage being imposed on first electrode film 221 and second electrode film 241, make first shaker arm 211 make bending motion in the vertical direction of Figure 18.Simultaneously, when voltage being imposed on first electrode film 222 and 223 and second electrode film 242 and 243, make second shaker arm 212 and the 3rd shaker arm 213 do phase place and the motion of first shaker arm, 211 opposite curvature in vertical direction.
Particularly, when first shaker arm 211 moved up, second shaker arm 212 and the 3rd shaker arm 213 moved down, and when first shaker arm 211 moved down, second shaker arm 212 and the 3rd shaker arm 213 moved up.In addition, as amplitude half bending motion of the amplitude of first shaker arm 211 by making second shaker arm 212 and the 3rd shaker arm 213, can eliminate the moment that is generated by first to the 3rd shaker arm 211～213.
By estimate the piezoelectric element 239 of the angular-rate sensor 200 of formation like this in the mode identical, confirmed that each piezoelectric element 239 all has and piezoelectric property and the thermal endurance identical according to the piezoelectric element 139 of the angular-rate sensor 31 of first embodiment with Fig. 2～Figure 15.
Although should be noted that in this embodiment each shaker arm all is provided with second electrode film 241～243 that is used to drive each shaker arm, also can for example only on first shaker arm 211, form second electrode film.In this case, by the reaction to the vibration of first shaker arm 211, second shaker arm 212 and the 3rd shaker arm 213 are to vibrate with first shaker arm, 211 opposite phases.
Perhaps, also can only on second shaker arm 212 and the 3rd shaker arm 213, form second electrode film.In this case, by the reaction to the vibration of second shaker arm 212 and the 3rd shaker arm 213, first shaker arm 211 is to vibrate with second shaker arm 212 and the 3rd shaker arm 213 opposite phases.
Above-mentioned piezoelectric element and angular-rate sensor are not limited in the above embodiments, but can carry out various variations.
For example, in the deposition of above-mentioned pzt thin film 33, have＜111 although PZT is formed〉orientation of face direction, the present invention is not limited to this, but PZT also can be deposited as have＜100 the face direction or＜orientation of 001〉face direction.Even when depositing PZT as described above, also still can obtain to have good piezoelectric property and stable on heating piezoelectric element 139.
In above embodiment, the crystal structure that has provided pzt thin film 33 is the description of the situation of tetragonal.Yet the crystal structure of pzt thin film 33 also can be rhombus, pseudo-square, pseudo-rhombus etc.In addition, pzt thin film 33 can comprise at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
Except angular-rate sensor 31, piezoelectric element 139 can also be applied to for example hot electric infrared sensor, liquid injection apparatus, semiconductor storage etc.Should be noted that in this case piezoelectric element 139 only needs to be provided with at least one in first and second electrode films, and not necessarily first and second detecting electrodes will be set.
Above embodiment has illustrated so-called single-tone forked type angular-rate sensor 31 and three tuning-fork-type angular-rate sensors 200 respectively.Yet the number of shaker arm can be for more than 2 or 3.Perhaps, although angular- rate sensor 31 and 200 has cantilever design separately, these transducers also can have center impeller (center impeller) structure.
Claims (20)
1. piezoelectric element comprises:
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and described piezoelectric film has tensile stress; And electrode film, voltage is imposed on described piezoelectric film.
2. piezoelectric element according to claim 1, wherein, the described tensile stress of described piezoelectric film is more than or equal to 50MPa and smaller or equal to 500MPa.
3. piezoelectric element according to claim 1, wherein, described piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm.
4. piezoelectric element according to claim 1, wherein, described electrode film has more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa.
5. piezoelectric element according to claim 1, wherein, described piezoelectric film is＜111〉direction has the orientation more than or equal to 80%.
6. piezoelectric element according to claim 1, wherein, described piezoelectric film comprises at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
7. piezoelectric element according to claim 1, wherein, described electrode film is by at least a formation the among Ti and the Pt.
8. piezoelectric element comprises:
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55; And
Electrode film has more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa, and voltage is imposed on described piezoelectric film.
9. piezoelectric element according to claim 8, wherein, described piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm,
10. piezoelectric element according to claim 8, wherein, described piezoelectric film has more than or equal to 50MPa and smaller or equal to the tensile stress of 500MPa.
11. piezoelectric element according to claim 8, wherein, described piezoelectric film is＜111〉direction has the orientation more than or equal to 80%.
12. piezoelectric element according to claim 8, wherein, described piezoelectric film comprises at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
13. piezoelectric element according to claim 8, wherein, described electrode film is by at least a formation the among Ti and the Pt.
14. a piezoelectric element comprises:
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and described piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm; And
Electrode film imposes on described piezoelectric film with voltage.
15. piezoelectric element according to claim 14, wherein, described piezoelectric film is＜111〉direction has the orientation more than or equal to 80%.
16. piezoelectric element according to claim 14, wherein, described piezoelectric film comprises at least a interpolation element that is selected from the group of being made up of Cr, Mn, Fe, Ni, Mg, Sn, Cu, Ag, Nb, Sb and N.
17. piezoelectric element according to claim 14, wherein, described electrode film is by at least a formation the among Ti and the Pt.
18. an angular-rate sensor comprises:
Substrate;
First electrode film is formed on the described substrate;
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and described piezoelectric film has tensile stress and is formed on described first electrode film; And
Second electrode film is formed on the described piezoelectric film.
19. an angular-rate sensor comprises:
Substrate;
First electrode film has more than or equal to 500MPa and smaller or equal to the tensile stress of 1500MPa and be formed on the described substrate;
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and described piezoelectric film is formed on described first electrode film; And
Second electrode film is formed on the described piezoelectric film.
20. an angular-rate sensor comprises:
Substrate;
First electrode film is formed on the described substrate;
Piezoelectric film is by Pb
1+X(Zr
YTi
1-Y) O
3+XThe lead zirconate titanate of expression constitutes, and wherein, X is more than or equal to 0 and smaller or equal to 0.3, and Y is more than or equal to 0 and smaller or equal to 0.55, and described piezoelectric film has more than or equal to 400nm and smaller or equal to the film thickness of 1000nm and be formed on described first electrode film; And
Second electrode film is formed on the described piezoelectric film.
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| JP2007297325 | 2007-11-15 | ||
| JP2007-297323 | 2007-11-15 | ||
| JP2007-297325 | 2007-11-15 | ||
| JP2007297323A JP4715836B2 (en) | 2007-11-15 | 2007-11-15 | Piezoelectric element, angular velocity sensor, and method of manufacturing piezoelectric element |
| JP2007297321A JP4737185B2 (en) | 2007-11-15 | 2007-11-15 | Piezoelectric element, angular velocity sensor, and method of manufacturing piezoelectric element |
| JP2007-297321 | 2007-11-15 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102189798A (en) * | 2010-03-10 | 2011-09-21 | 精工爱普生株式会社 | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element |
| CN105190848A (en) * | 2013-05-13 | 2015-12-23 | 三菱综合材料株式会社 | Silicon substrate having ferroelectric film attached thereto |
| CN110212083A (en) * | 2018-02-28 | 2019-09-06 | 成都理想境界科技有限公司 | Piezoelectric device, optical fiber scanning driver, fibre-optic scanner and projection arrangement |
| CN112714963A (en) * | 2018-08-30 | 2021-04-27 | 富士胶片株式会社 | Piezoelectric device and method for manufacturing piezoelectric device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI717498B (en) * | 2016-06-21 | 2021-02-01 | 日商前進材料科技股份有限公司 | Membrane structure and manufacturing method thereof |
| GB2551803B (en) * | 2016-06-30 | 2020-04-01 | Xaar Technology Ltd | Poling of a piezoelectric thin film element in a preferred electric field driving direction |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0482309A (en) * | 1990-07-24 | 1992-03-16 | Murata Mfg Co Ltd | Polarization method for piezoelectric body |
| JP3341357B2 (en) * | 1993-06-08 | 2002-11-05 | セイコーエプソン株式会社 | Piezoelectric thin film element |
| JP3541877B2 (en) * | 1999-09-22 | 2004-07-14 | セイコーエプソン株式会社 | Piezoelectric element, method of manufacturing the same, ink jet recording head and ink jet printer |
| JP2003023187A (en) * | 2001-07-10 | 2003-01-24 | Murata Mfg Co Ltd | Highly heat resistant piezoelectric element and piezoelectric device comprising it |
| CA2438360C (en) * | 2001-12-18 | 2010-02-09 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric element, ink jet head, angular velocity sensor, manufacturing method thereof, and ink jet printing apparatus |
| JP2003212545A (en) * | 2002-01-18 | 2003-07-30 | Victor Co Of Japan Ltd | Pzt film and manufacturing method for pzt film |
| KR20040010327A (en) * | 2002-07-24 | 2004-01-31 | 애질런트 테크놀로지스, 인크. | Electrode materials for ferroelectric semiconductor device and manufacturing method therefor |
| JP2004282913A (en) * | 2003-03-17 | 2004-10-07 | Matsushita Electric Ind Co Ltd | Thin film piezoelectric actuator for disc drive and its fabricating process |
| EP1666432A4 (en) * | 2003-09-25 | 2009-07-29 | Tdk Corp | Piezoelectric ceramic composition and piezoelectric device |
| JP3891190B2 (en) * | 2004-05-21 | 2007-03-14 | ソニー株式会社 | Piezoelectric element, piezoelectric device and angular velocity sensor |
| JP2005340631A (en) * | 2004-05-28 | 2005-12-08 | Sony Corp | Piezoelectric element component and electronic equipment |
| JP2006147839A (en) * | 2004-11-19 | 2006-06-08 | Ngk Insulators Ltd | Piezo-electric/electrostrictive device |
| JP2007123683A (en) * | 2005-10-31 | 2007-05-17 | National Institute Of Advanced Industrial & Technology | Ferroelectric thin film and manufacturing method thereof |
| JP2007250626A (en) * | 2006-03-14 | 2007-09-27 | Seiko Epson Corp | Manufacturing method of piezoelectric element, actuator, liquid injection head, and liquid injection apparatus, and piezoelectric element |
-
2007
- 2007-11-15 JP JP2007297323A patent/JP4715836B2/en active Active
-
2008
- 2008-11-14 CN CN2008101814711A patent/CN101436642B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102189798A (en) * | 2010-03-10 | 2011-09-21 | 精工爱普生株式会社 | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element |
| CN105190848A (en) * | 2013-05-13 | 2015-12-23 | 三菱综合材料株式会社 | Silicon substrate having ferroelectric film attached thereto |
| CN105190848B (en) * | 2013-05-13 | 2018-05-11 | 三菱综合材料株式会社 | The silicon substrate of subsidiary ferroelectric film |
| CN110212083A (en) * | 2018-02-28 | 2019-09-06 | 成都理想境界科技有限公司 | Piezoelectric device, optical fiber scanning driver, fibre-optic scanner and projection arrangement |
| CN110212083B (en) * | 2018-02-28 | 2024-05-28 | 成都理想境界科技有限公司 | Piezoelectric device, optical fiber scanning driver, optical fiber scanning device and projection device |
| CN112714963A (en) * | 2018-08-30 | 2021-04-27 | 富士胶片株式会社 | Piezoelectric device and method for manufacturing piezoelectric device |
| US12063864B2 (en) | 2018-08-30 | 2024-08-13 | Fujifilm Corporation | Piezoelectric device and method of manufacturing piezoelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4715836B2 (en) | 2011-07-06 |
| JP2009123973A (en) | 2009-06-04 |
| CN101436642B (en) | 2012-08-08 |
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