CN101435100A

CN101435100A - Fluid region control device and operation method thereof

Info

Publication number: CN101435100A
Application number: CNA2007101867485A
Authority: CN
Inventors: 施惠绅; 简佑芳
Original assignee: United Microelectronics Corp
Current assignee: United Microelectronics Corp
Priority date: 2007-11-16
Filing date: 2007-11-16
Publication date: 2009-05-20
Anticipated expiration: 2027-11-16
Also published as: CN101435100B

Abstract

The invention provides a fluid region control device and an operating method thereof. The fluid region control device comprises at least one substrate bearing base, at least one process fluid supply pipeline, at least one process fluid compensating pipeline, at least one control fluid supply pipeline and at least one control fluid compensating pipeline. The process fluid supply pipeline provides at least one process fluid, and leads the process fluid to contact the crystal plane of a wafer. The control fluid supply pipeline continuously provides at least one control fluid. The control fluid does not dissolve in the process fluid, and can flow past the crystal edge of the wafer, so as to lead the process fluid to be limited in a specific space.

Description

Fluid region control device and working method thereof

Technical field

The present invention relates to a kind of fluid region control device and working method thereof, relate in particular to a kind of fluid region control device and working method thereof that can be applicable to electroplate (plating) technology, cleaning (cleaning) technology or glossing.

Background technology

At present, include physical vapor deposition, chemical vapour deposition, wireless plating technology, reach electrochemical plating etc. in order to the technology that forms metal material layer.Wherein, (electro chemical plating, ECP) technology has the advantage that cost is cheap and output capacity is fast, is widely used in the industry member because electrochemistry is electroplated.In electroplating process, the plated film quality can be subjected to the influence of cleanliness factor or the like factor on composition, temperature, current density and the plated body surface of plating bath.

See also Fig. 1 to Fig. 3, Fig. 1 to Fig. 3 is the process schematic representation of known electric chemical plating process.As shown in Figure 1, at first provide a wafer 10 and an electroplanting device 20.Electroplanting device 20 includes a plating tank 12, and electroplates fluid 22, anode system (anode system) 14, one cathode electrode (cathodeelectrode) 16 and a fixation kit (fixing component) 18.Plating tank 12 is electroplated fluid 22 in order to splendid attire, and the main component of plating fluid 22 is for containing metal ion solution.Anode system 14 includes an anolyte compartment (anode chamber) 30, one anode electrode 24, a filtration membrane (filtermembrane) 26, a diffusion film (diffuser membrane) 28 and is electroplated fluid provides pipeline 32.

Wafer 10 is positioned between cathode electrode 16 and the fixation kit 18, wafer 10 is clamped by cathode electrode 16 and fixation kit 18.Then, as shown in Figure 2, slightly inclined wafer 10 makes wafer 10 and electroplates between the liquid level of fluid 22 to have after the angle, again with wafer 10 slowly in the immersion plating fluid 22, makes relatively to be difficult for entrained air bubbles on the surface of wafer 10.Thereafter, as shown in Figure 3, cathode electrode 16 is electrically connected on the galvanized wafer 10 of desire, and in order to promote the homogeneity of coating film thickness, generally cathode electrode 16 all can rotate when electroplating, and can continue to touch fresh plating fluid to guarantee wafer 10.When this electroplanting device 20 was bestowed external voltage or electric current, the circuit of being made up of anode system 14, plating fluid 22, cathode electrode 16 just can be switched on, and carries out reduction reaction around cathode electrode 16, and metallic substance is plated on the wafer 10.

The known electric chemical plating process not only can be plated in metallic substance on the crystal face of wafer 10, also can metallic substance be plated on the crystal edge of wafer 10 simultaneously.Yet in fact the metallic substance that is attached to edge bevel surface is not that product is required.The phenomenon follow-up when carrying out other semiconductor technology, that the metallic substance of edge bevel surface peels off (peeling) through regular meeting because be subjected to thermal stresses (thermal stress) or other factors, and then cause metallic substance cracked and produce chip or particle.Especially ought be positioned over chemical vapour deposition (chemical vapor deposition by semi-conductor chip by the gross, when CVD) carrying out CVD technology in the device, this phenomenon of peeling off if take place in the wafer 10 of relative top, position, will other positions of severe contamination wafer 10 surfaces of below relatively, cause defective.In addition, in response to the required and mobile wafer 10 of technology the time, the chip of this metallic substance also tends to fall on the surface of wafer 10 and polluted product, and then influences the function (performance) of product.

For fear of above-mentioned defective, need carry out extra removing technology, cleaning and drying process in addition after the known electric chemical plating process, be attached to the metallic substance of edge bevel surface with removal.This not only can increase process time and technology cost, also can increase the complexity of technology, and then may cause the yield of product to descend.At electroplating fluid 22, because known anode system 14, wafer 10 need whole soaking to place plating fluid 22 with cathode electrode 16, and wafer 10 must favour the liquid level of electroplating fluid 22 and immerse, so the known electric chemical plating process needs huge plating tank 12 and a large amount of plating fluids 22.After the electrochemistry electroplating technology carried out for some time, technology just needed to suspend, to pour out old plating fluid 22 and to inject new plating fluid 22.Thus, the replacing of electroplating fluid 22 can expend the tediously long time again, makes output reduce.

On the other hand, in order to carry out the known electric chemical plating process, single wafer 10 must be placed between cathode electrode 16 and the fixation kit 18 by mechanical arm earlier, then insert obliquely and electroplate in the fluid 22, open electroplanting device 20 and carry out electroplating reaction thereafter, shift out plating tank 12 again, and carry out cleaning and drying process or the like subsequent technique.Hence one can see that, is subjected to electroplanting device 20 operational restrictions, and the known electric chemical plating process can't a large amount of wafer 10 of batch processed, and then badly influence the output of product.Moreover known electroplanting device 20 is difficult to that wafer 10 is carried out instant (in-situ) and measures, and therefore not only makes known technology can't control the electrochemistry electroplating technology accurately and quickly, and the step of measurement also can expend the extra time.

Summary of the invention

Therefore one of main purpose of the present invention is to provide a kind of fluid region control device and working method thereof, to solve the problem that known technology was produced.

According to one embodiment of the invention, the invention provides a kind of galvanized fluid region control device that is used for, include at least one substrate bearing base (substrate holder), at least one cathode electrode, at least one anode system, at least one control fluid provides pipeline (confining fluid supplying tube), at least one control fluid covering pipeline (confining fluid recovering tube), at least one process fluid provides pipeline (process fluid supplying tube) and at least one process fluid covering pipeline (process fluidrecovering tube).Substrate bearing base is in order to carry at least one semiconductor-based end.Cathode electrode is arranged on the surface of substrate bearing base, in order to be electrically connected to the semiconductor-based end.Anode system is positioned at substrate bearing base top, be provided with corresponding to the semiconductor-based end in essence, and with substrate bearing base at a distance of a reaction height (reaction height).Definition has at least one pending zone and at least one non-treatment zone between anode system and the cathode electrode.The control fluid provides pipeline and control fluid covering pipeline all to be provided with corresponding to non-treatment zone, and being respectively applied for provides and reclaim at least one control fluid.Process fluid provides pipeline and process fluid covering pipeline all to be provided with corresponding to pending zone, and being respectively applied for provides and reclaim at least one plating fluid.

According to another preferred embodiment of the invention, the present invention provides a kind of working method of fluid region control device in addition.At least one fluid region control device at first is provided, fluid region control device includes at least one substrate bearing base, at least one control fluid provides pipeline and at least one control fluid covering pipeline, and definition has at least one pending zone and at least one non-treatment zone on the substrate bearing base.Afterwards, provide at least one semiconductor-based end, the semiconductor-based end, be fixed on the substrate bearing base.Then, open the control fluid pipeline and control fluid covering pipeline are provided, make that at least one control fluid continues to provide pipeline to flow out from the control fluid, and flow into control fluid covering pipeline, wherein control the non-treatment zone that fluid flows through substrate bearing base.At least one process fluid is provided then, the pending zone of process fluid contact substrate bearing base, and process fluid is insoluble to the control fluid.

For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred implementation cited below particularly, and conjunction with figs. are described in detail below.Yet following preferred implementation and graphic only for reference and explanation usefulness are not to be used for the present invention is limited.

Description of drawings

Fig. 1 to Fig. 3 is the process schematic representation of known electric chemical plating process.

What Fig. 4 illustrated is the diagrammatic cross-section of the fluid region control device of first preferred embodiment of the invention.

Fig. 5 illustrates is the diagrammatic cross-section of anode system shown in Figure 4.

What Fig. 6 illustrated is the schematic perspective view of a preferred embodiment substrate bearing base of the present invention.

What Fig. 7 illustrated is the schematic top plan view of another preferred embodiment substrate bearing base of the present invention.

What Fig. 8 illustrated is the schematic perspective view of a preferred embodiment cathode electrode of the present invention.

What Fig. 9 illustrated is the schematic side view of another preferred embodiment cathode electrode of the present invention.

What Figure 10 to Figure 12 illustrated is the schematic cross-section of the present invention first, second, third and the 4th pipeline.

What Figure 13 illustrated is the diagrammatic cross-section of the fluid region control device of another preferred embodiment of the present invention.

Figure 14 to Figure 18 illustrates is the synoptic diagram of the working method of fluid region control device shown in Figure 13.

What Figure 19 illustrated is the diagrammatic cross-section of the fluid region control device of second preferred embodiment of the present invention.

What Figure 20 illustrated is the diagrammatic cross-section of the fluid region control device of the another preferred embodiment of the present invention.

Figure 21 to Figure 24 illustrates is the synoptic diagram of the working method of fluid region control device shown in Figure 19.

What Figure 25 illustrated is the diagrammatic cross-section of the fluid region control device of the 3rd preferred embodiment of the present invention.

What Figure 26 illustrated is an operation chart of fluid region control device of the present invention.

What Figure 27 illustrated is the synoptic diagram of the technological operation equipment of the 4th preferred embodiment of the present invention.

Figure 28 is the schematic perspective view of e Foerderanlage shown in Figure 27.

Figure 29 is that technological operation equipment shown in Figure 27 is in the diagrammatic cross-section in middle level.

What Figure 30 illustrated is the synoptic diagram of the technological operation equipment of the 5th preferred embodiment of the present invention.

What Figure 31 illustrated is the synoptic diagram of the technological operation equipment of the 6th preferred embodiment of the present invention.

What Figure 32 illustrated is the synoptic diagram of the technological operation equipment of the 7th preferred embodiment of the present invention.

What Figure 33 illustrated is the synoptic diagram of the technological operation equipment of the 8th preferred embodiment of the present invention.

The main element nomenclature

10 wafers, 12 plating tanks

14 anode systems, 16 cathode electrodes

18 fixation kits, 20 electroplanting devices

22 electroplate fluid 24 anode electrodes

26 filtration membranes, 28 diffusion films

Fluid is electroplated by 30 anolyte compartments 32 provides pipeline

110 anode systems of the semiconductor-based ends 114

116 cathode electrodes, 118 anolyte compartments

120 fluid mass Controlling System, 124 anode electrodes

126 filtration membranes, 128 diffusion films

130 substrate bearing base 130a conveying belt

130b ring texture 132 first pipelines

134 second pipelines 136 the 5th pipeline

142 the 3rd pipelines 144 the 4th pipeline

146 the 6th pipelines 148 the 7th pipeline

152 sidewalls, 154 control fluids

156 electroplate fluid 158 polishing slurries

214 pipeline systems, 216 fixation kits

220 fluid region control devices, 256 washing fluids

320 fluid region control devices, 322 fluid region control devices

324 automatic process Controlling System, 350 technological operation equipment

360 column base stations, 362 cylindrical stents

364 shells 366 are written into/carry device

368 process systems, 372 e Foerderanlages

420 fluid region control devices, 450 technological operation equipment

466 be written into/carry device 472 e Foerderanlages

478 seed deposition reaction chambers, 482 barrier layer deposition reaction chambers

Dry reaction chambers 484 486 pre-deposition reaction chambers

520 fluid region control devices, 550 technological operation equipment

572 conveying belt, 620 fluid region control devices

650 technological operation equipment, 672 conveying belt

674 mechanical arms, 720 fluid region control devices

714 polishing systems, 722 sensors

724 polishing pad permanent seats, 751 polishing pads

Copper electrochemical electroplating reaction chambers 802 810 wafer interfaces

812 bronze medal seed deposition reaction chambers 816 load the port

822 pre-washing reaction chambers, 830 single-chip compartment

832 surge chambers, 840 pre-washing reaction chambers

842 surge chambers, 850 technological operation equipment

852 tantalums/deposition of tantalum-nitride reaction chamber copper electrochemical electroplating reaction chambers 860

870 copper CMP reaction chambers, 872 mechanical arms

880 tectum reaction chambers, 890 copper CMP reaction chambers

914 systems

Embodiment

See also Fig. 4 and Fig. 5, what Fig. 4 illustrated is the diagrammatic cross-section that first preferred embodiment of the invention is used for galvanized fluid region control device 220, and Fig. 5 illustrates is the diagrammatic cross-section of anode system 114 shown in Figure 4, and wherein components identical or position are continued to use identical symbol and represented.Be noted that graphic only for the purpose of description, do not map according to life size.As shown in Figure 4, present embodiment provides a kind of galvanized fluid region control device 220 that is used for, and includes a fluid mass Controlling System 120 and an anode system 114.Wherein, fluid mass Controlling System 120 includes a substrate bearing base 130, a cathode electrode 116, at least one first pipeline 132, at least one second pipeline 134, at least one the 3rd pipeline 142 and at least one the 4th pipeline 144.

Anode system 114 is positioned at substrate bearing base 130 tops, is provided with corresponding to the pending semiconductor-based end 110 in essence.Anode system 114 and substrate bearing base 130 can be used as the voltage source of electroplating reaction on the one hand at a distance of a reaction height H, can assist fluid region control device 220 to remove the occupied height of CONTROL PROCESS fluid on the other hand.In fluid region control device 220, anode system 114 can be a rotational system (rotary system) or a fixed system (fixed system).In other words, for substrate bearing base 130, anode system 114 can be rotated action, also can maintain on the fixed position.On the other hand, substrate bearing base 130 also can be selected to be rotated action or maintain on the fixed position.As shown in Figure 5, anode system 114 can include an anode electrode 124, and optionally includes at least one the 5th pipeline 136, a sensor (sensor) 122 or detector (detector is not shown among the figure).In addition, anode system 114 also can include elements such as anolyte compartment 118, filtration membrane 126 or diffusion film 128.

Substrate bearing base 130 is in order to carry at least one semiconductor-based end 110.Wherein, substrate bearing base 130 of the present invention can have a band shape (belt type) structure or a ring-type (ring type) structure, as Fig. 6 and shown in Figure 7.The substrate bearing base 130 of Fig. 6 has at least one conveying belt 130a, makes numerous pending semiconductor-based ends 110 can utilize substrate bearing base 130 to import in regular turn in the fluid region control device 220.130 of the substrate bearing base of Fig. 7 have a ring texture 130b, with the ccontaining pending semiconductor-based end 110.Be noted that substrate bearing base 130 also can have ring texture and conveying belt (not being shown among the figure) simultaneously, utilize the ccontaining semiconductor-based end 110 of ring texture, and utilize conveying belt to transmit the ring texture and the semiconductor-based end 110.

Cathode electrode 116 is arranged on the surface of substrate bearing base 130, can be electrically connected to the semiconductor-based end 110.Wherein, cathode electrode 116 can be simultaneously as a fixation kit, in order to be fixed in a predetermined position of substrate bearing base 130 the semiconductor-based end 110.In view of this, cathode electrode 116 can have an electrostatic chuck (electrostatic chuck, e-chuck), a vacuum pad (vacuum chuck), ring-like (ring type) structure or a pincers type (clamp type) structure, as Fig. 8 and shown in Figure 9.The cathode electrode 116 of Fig. 8 can down be fixed the semiconductor-based end 110 from the top at the semiconductor-based end 110, and the cathode electrode 116 of Fig. 9 can be fixed on the surface of substrate bearing base 130, topples over and the semiconductor-based end 110 is lived in strangulation towards the direction at the semiconductor-based end 110 around the semiconductor-based end 110.On the substrate bearing base 130, definition has a pending zone (not being shown among the figure) and a non-treatment zone (not being shown among the figure) between anode system 114 and the cathode electrode 116.Part is positioned at the predetermined processing that will accept technology in the semiconductor-based ends 110 in pending zone, and part is positioned at the predetermined processing of not accepting technology in the semiconductor-based ends 110 of non-treatment zone.

First pipeline 132, second pipeline 134, the 3rd pipeline 142 and the 4th pipeline 144 all are positioned at around the anode system 114, in order to provide or to reclaim the required chemical substance of technology, additive (additive), deionized water, gas, control fluid or the like material.For the pending semiconductor-based end 110, the 3rd pipeline 142 and the 4th pipeline 144 are positioned at the outside of first pipeline 132 and second pipeline 134.First pipeline 132, second pipeline 134, the 3rd pipeline 142 and the 4th pipeline 144 all can have pipeline cross-sectional shape arbitrarily, for example circle, semicircle, arc, ellipse, rectangle or Polygons or the like shape.For instance, first pipeline 132 and second pipeline 134 shown in Figure 10 are all pipe, and the cross section that the 3rd pipeline 142 and the 4th pipeline 144 have circular arc.

In addition, fluid region control device of the present invention also can include a plurality of first pipelines 132, a plurality of second pipeline 134, a plurality of the 3rd pipeline 142, perhaps a plurality of the 4th pipelines 144, and allow numerous pipelines be arranged in required shape, for example circle, semicircle, arc, ellipse, linear or rectangle or the like shape.For instance, first pipeline 132, second pipeline 134, the 3rd pipeline 142 and the 4th pipeline 144 shown in Figure 11 are all pipe, and the 3rd pipeline 142 and the 4th pipeline 144 are arranged in a circular pattern respectively.Or shown in Figure 12, when fluid region control device 220 has sidewall 152 when auxiliary, the 3rd pipeline 142 and the 4th pipeline 144 can have linear cross section, and arrangement parallel to each other.What need pay special attention to is that each pipeline shown in the figure all tilts towards the center position at the semiconductor-based end 110, as shown in Figure 4.Yet the present invention need not be confined to this, each pipeline of fluid region control device 220 of the present invention also can be provided with perpendicular to the crystal face at the semiconductor-based end 110, the center position of backside semiconductor substrate 110 tilts, or even is parallel to the crystal face at the semiconductor-based end 110 and is provided with.

Except installing the pipelines in anode system 114 inside, in fact the each several part of fluid region control device 220 can install pipeline.As shown in figure 13, fluid mass Controlling System 120 can also include at least one the 6th pipeline 146 and at least one the 7th pipeline 148, be arranged in the substrate bearing base 130, and corresponding to the periphery at the semiconductor-based end 110.The 6th pipeline 146 and the 7th pipeline 148 can have above-mentioned various cross section equally, also can be arranged in arbitrary shape by a plurality of the 6th pipelines 146 or the 7th pipeline 148.Fluid region control device 220 can utilize the valve of pipeline or the open and close that each hydrodynamicpressure is regulated and control first pipeline 132, second pipeline 134, the 3rd pipeline 142, the 4th pipeline 144, the 5th pipeline 136, the 6th pipeline 146 or the 7th pipeline 148, and fluid region control device 220 also can be regulated and control streaming fluid kind, flow direction, flow velocity in each pipeline, or even each pipeline angle and position be set.

On the other hand, except installing sensors 122 or the detector in anode system 114 inside, the each several part of fluid region control device 220 in fact all can be installed various sensors 122 or detector, for example install a temperature-sensitive sticker, a flow velocity sensor, or one can measure the wafer surface situation (for example: thickness, Flatness ... etc.) sensor.For instance, first pipeline, 132 interior can including in a sensor 122, the second pipelines 134 also can include a sensor 122.These sensors can be in the process that technology is carried out to state of arts or process fluid measures immediately, therefore can control state of arts accurately and quickly, so can be immediately feedback and adjust every processing parameter or the quality of process fluid automatically.

In order to be illustrated more clearly in feature of the present invention place, below by the present invention is applied to the example of an electrochemistry electroplating technology working method of free flow body region control device 220.See also Figure 14, what it illustrated is a working method synoptic diagram that is used for galvanized fluid region control device 220 shown in Figure 13, and wherein components identical or position are continued to use identical symbol and represented.As shown in figure 14, at first provide fluid region control device 220 shown in Figure 13.Afterwards, provide at least one semiconductor-based end 110, utilize cathode electrode 116 or other fixation kits that the semiconductor-based end 110 is fixed on the substrate bearing base 130.The semiconductor-based end 110, can be a wafer, a silicon base or silicon-coated insulated (silicon-on-insulator, SOI) substrate.In present embodiment, the semiconductor-based end 110, be a wafer.Owing to the crystal face of present embodiment wafer need be accepted to electroplate and forms metal material layer, and the crystal edge of wafer does not need to form metal material layer, therefore pending regional 102 of fluid region control device 220 is the crystal faces that correspond to wafer, but not treatment zone 104 is the crystal edges that correspond to wafer, and wherein the crystal face of wafer can upwards be placed and in the face of anode system 114.

Then, open the 3rd pipeline 142 and the 4th pipeline 144, make that a control fluid 154 continues to flow out from the 4th pipeline 144, and reclaim that the 6th pipeline 146 and the 7th pipeline 148 are then closed by the 3rd pipeline 142.Wherein, control fluid 154 is in order to keep the shape and the position of process fluids such as chemical substance in the pending zone or washing fluid, make chemical substance can not touch the part that need not accept art breading at the semiconductor-based end 110, for example control fluid 154 and can be rare gas elementes such as nitrogen (inert gas).The 4th pipeline 144 and the 3rd pipeline 142 all be arranged at the semiconductor-based end 110 around, be respectively applied for provide and reclaim control fluid 154.At this moment, control fluid 154 can form a mobile moving-wire P from the path that the 4th pipeline 144 flows to the 3rd pipeline 142.By the configuration of the 3rd pipeline 142 and the 4th pipeline 144, fluid region control device 220 can make territory control fluid 154 flow through the non-treatment zone of fluid region control device 220.

Open first pipeline 132 and second pipeline 134 then, make that a plating fluid 156 continues to flow out from first pipeline 132, and reclaim by second pipeline 134.Plating fluid 156 herein is the process fluid of electrochemistry electroplating technology.First pipeline 132 and second pipeline 134 are respectively applied for and provide and reclaim and electroplate fluid 156, are arranged between the semiconductor-based end 110 and the mobile moving-wire P that controls fluid 154.Electroplate fluid 156 and control fluid 154 lasting flowing in order to impel, a pumping can be installed as power resources in fluid region control device 220 inside or outside, but need not be confined to this.In other embodiment of the present invention, process fluid even can provide constantly and reclaim constantly, but after providing a certain amount of process fluid to react earlier, whether consideration will reclaim process fluid or new process fluid is provided according to circumstances again.

Because electroplating fluid 156 is difficult for dissolving each other with control fluid 154 each other, therefore control fluid 154 and can control the flow range of electroplating fluid 156, make plating fluid 156 can not touch at semiconductor-based the end 110 and need not accept the part of art breading, and only can touch the part that needs to accept art breading at semiconductor-based the end 110.Thus, the flow velocity that fluid region control device 220 can be by control fluid 154, flow velocity, the position of each pipeline and the angle of each pipeline or the like the factor of electroplating fluid 156 are controlled the occupied space of plating fluid 156.

Anode electrode 124 is electrically connected to different potentials after can or flowing out before electroplating fluid 156 outflows with cathode electrode 116, thus, the circuit of being made up of anode electrode 124, plating fluid 156, cathode electrode 116 just can be switched on, around cathode electrode 116, carry out reduction reaction, and metallic substance is plated on the crystal face at the semiconductor-based end 110.

Under aforesaid situation, to control fluid 154 and can not react each other with plating fluid 156, control fluid 154 is to utilize itself and plating fluid 156 immiscible characteristics to limit to the position and the shape of electroplating fluid 156.In the present invention, process fluid all can be liquid state, gaseous phase, steam condition (vapor state) or colloidal state (gel state) with the control fluid.For example, electroplating fluid 156 is to flow with liquid state, and control fluid 154 then is to flow with gaseous phase.Or electroplating fluid 156 can be liquid state with control fluid 154 simultaneously.Even control fluid 154 can include a supercutical fluid, for example carbonic acid gas.In other embodiments of the invention, control fluid 154 can also include other various materials and comes the operation of auxiliary process or subcontrol to electroplate flowing of fluid 156.For instance, control fluid 154 can include an ionized gas (ionizedgas), a hot gas or a cold air, to change technological temperature or the temperature and the characteristic of electroplating fluid 156.Thus, shape and position that control fluid 154 can be kept process fluid on the one hand on the other hand can reinforcing process, even can also remove residual residue at the semiconductor-based end 110.

One of principal character of the present invention is to utilize a control fluid to replace known container, the space that occupies with CONTROL PROCESS required fluidic position and process fluid.In order to achieve the above object, control fluid and process fluid are immiscible each other, then controlling fluid can limit to the space that process fluid occupies, the space that utilizes control fluid and process fluid magneticaction each other to come the CONTROL PROCESS fluid to occupy by the mobile moving-wire P that flows own, or utilizes and control fluid and process fluid electric power each other and be used for the space that the CONTROL PROCESS fluid occupies.In view of this, control fluid 154 can include material with magnetic, has electrical material, magnetic flow liquid (magneto-rheological fluid, MRF), electrorheological fluid (electro-rheological fluid, ERF), or even solia particle.Thus, fluid region control device 220 can utilize the characteristic of magnetic force (magnetic force) or electric power (electric force) control fluid 154 or plating fluid 156, and then flowing of fluid 156 electroplated in control.

The aforementioned operation method only is wherein a kind of embodiment of the present invention, and control fluid 154 can be adjusted according to the actual process demand with the actual flow mode of electroplating fluid 156.In other words, at different process requirements, control fluid 154 of the present invention or plating fluid 156 can be flowed out by any pipeline, and reclaim in suitable pipeline.See also Figure 15 to Figure 18, what it illustrated is the synoptic diagram that is used for other working method of galvanized fluid region control device 220 shown in Figure 13, and wherein components identical or position are still continued to use identical symbol and represented.Figure 15 can be applicable to an electrochemistry electroplating technology equally to working method shown in Figure 180, and the main difference part of these working method and aforementioned operation method is that control fluid 154 changes to some extent with the flowline of electroplating fluid 156.

As shown in figure 15, control fluid 154 is to flow out from the 4th pipeline 144 equally, and reclaims by the 3rd pipeline 142.Change by 134 outflows of second pipeline but electroplate fluid 156, and reclaim by first pipeline 132.As shown in figure 16, the mobile moving-wire P of control fluid 154 is constant equally, is preferably flowed out by the 5th pipeline 136 but electroplate fluid 156, and reclaims with second pipeline 134 by first pipeline 132.As shown in figure 17, electroplate fluid 156 and flow out, and reclaim by second pipeline 134 by first pipeline 132.And control fluid 154 is flowed out by the 6th pipeline 146, and reclaims by the 3rd pipeline 142.Or shown in Figure 180, electroplate fluid 156 and flow out, and reclaim by second pipeline 134 by first pipeline 132.And control fluid 154 is flowed out with the 7th pipeline 148 by the 6th pipeline 146, and reclaims by the 3rd pipeline 142 and the 4th pipeline 144.

What pay special attention to is, aforesaid fluid region control device 220, fluid flow moving-wire P and process fluid flow moving-wire all can be applicable in a solvent cleaning (solvent cleaning) technology, and fluid region control device 220 of the present invention can be applicable to any needs in the red-tape operati fluidic technology, for example a drying process, a wet etch process, an electroless-plating (electroless plating) technology, a chemically machinery polished (chemical mechanical polishing, CMP) technology, or an electrochemical mechanical polishing technology or the like.When fluid region control device 220 is applied to cleaning, anode electrode 124 need not be electrically connected to different potentials with cathode electrode 116, and electroplating fluid 156 replaceable is washing fluid, for example a deionized water (deionized water, DI water) or a supercutical fluid.Therefore, semiconductor substrate 110 is accepted after the electrochemistry electroplating technology in fluid region control device 220, can close the voltage that puts on anode electrode and cathode electrode, and change process fluid, soon in same device, accept a cleaning or a drying process.

Hence one can see that, when being applied to cleaning, and fluid region control device even can not need anode electrode and two assemblies of cathode electrode.See also Figure 19, it illustrates is the diagrammatic cross-section of the second preferred embodiment of the present invention fluid region control device 320 that is used to clean, and wherein components identical or position are continued to use identical symbol and represented.As shown in figure 19, present embodiment provides a kind of fluid region control device that is used to clean 320.Fluid region control device 320 and fluid region control device 220 main differences are that the fluid region control device 320 that is used to clean can not need cathode electrode 116 and anode system 114.Therefore, fluid region control device 220 can utilize a fixation kit 216 to fix the semiconductor-based end 110, and utilize a pipeline system (tube system) 214 to assist the reaction height H of CONTROL PROCESS, wherein fixation kit 216 can be electrostatic chuck, vacuum pad or forceps type structure.Pipeline system 214 is positioned at substrate bearing base 130 tops, be provided with corresponding to the semiconductor-based end 110 in essence, and with substrate bearing base 130 at a distance of a reaction height H.Definition has a pending zone (not being shown among the figure) and a non-treatment zone (not being shown among the figure) on the substrate bearing base 130.Part is positioned at the predetermined processing that will accept technology in the semiconductor-based ends 110 in pending zone, and part is positioned at the predetermined processing of not accepting technology in the semiconductor-based ends 110 of non-treatment zone.

In addition, in another embodiment of the present invention, fluid mass Controlling System 120 itself just can be used for cleaning, etch process or drying process, and utilizes the gravity of process fluid itself and the position that the control fluid is kept process fluid, as shown in figure 20.

When fluid region control device 320 was applied to etch process or cleaning, control fluid and process fluid can also have other flow pattern.See also Figure 21 to Figure 24, what it illustrated is the synoptic diagram of other working method of the fluid region control device that is used to clean 320 shown in Figure 19, wherein components identical or position are still continued to use identical symbol and are represented, and the semiconductor-based end 110 herein can be a wafer equally.As shown in figure 21, in the time will cleaning the crystal face at the semiconductor-based end 110, first pipeline 132 provides the required washing fluid of technology 256 with second pipeline 134, and reclaims washing fluid 256 by the 5th pipeline 136.And control fluid 154 is flowed out with the 7th pipeline 148 by the 6th pipeline 146, and reclaims through the 3rd pipeline 142 and the 4th pipeline 144 from lower to upper.Perhaps also can be as shown in Figure 22, control fluid 154 is flowed out with the 4th pipeline 144 by the 3rd pipeline 142, and reclaims through the 6th pipeline 146 and the 7th pipeline 148 from top to bottom.

In the time will cleaning the crystal edge at the semiconductor-based end 110, the pending zone of fluid region control device 320 can correspond to the crystal edge at the semiconductor-based end 110, but not treatment zone can correspond to the crystal face at the semiconductor-based end 110.As shown in figure 23, first pipeline 132 provides technology required control fluid 154 with second pipeline 134, and reclaims control fluid 154 by the 5th pipeline 136, and the crystal face that is positioned at the wafer of non-treatment zone with protection does not contact with washing fluid 256.And washing fluid 256 is flowed out by the 6th pipeline 146, and reclaims through the 3rd pipeline 142.Moreover as shown in figure 24, when cleaning the brilliant unlucky of the semiconductor-based end 110, fixation kit 216 can slightly lift the semiconductor-based end 110 earlier, provides washing fluid 256, the three pipelines 142 to reclaim washing fluid 256 by the 6th pipeline 146.And control fluid 154 is flowed out by first pipeline 132 and second pipeline 134, and reclaims through the 5th pipeline 136.

The fluid region control device 320 that is used for galvanized fluid region control device 220 or is used to clean of the present invention also can be applicable to CMP (Chemical Mechanical Polishing) process, and wherein this technology can be divided into traditional chemical mechanical polishing process and electrochemical etching technology.Please refer to Figure 25, it illustrates is the diagrammatic cross-section of the 3rd preferred embodiment of the present invention fluid region control device 720 that is used to polish.As shown in figure 25, fluid region control device 720 can include a polishing system (polishing system) 714 and one fluid mass Controlling System 120, wherein polishing system 714 also includes a polishing pad (polishing pad) 751, one polishing pad permanent seat (pad holder) 724, and polishing slurries (slurry) 158.

When being applied to electrochemical etching technology, fixation kit 216 can be used as anode electrode, and polishing pad permanent seat 724 can be used as cathode electrode, quickens polishing efficiency in order to energising.In addition, when being applied to the traditional chemical mechanical polishing process, fluid region control device 720 can be closed the voltage that puts on anode electrode and cathode electrode, can carry out the traditional chemical mechanical polishing process in same device.In other words, replacing, switch by subelement, and the replacing of process fluid, various technology can be promptly carried out at the semiconductor-based end 110 in single fluid regional control device 720, for example soon accept a cleaning after a CMP (Chemical Mechanical Polishing) process.

Definition has a pending zone (not being shown among the figure) and a non-treatment zone (not being shown among the figure) on the substrate bearing base 130.Part is positioned at the predetermined processing that will accept CMP (Chemical Mechanical Polishing) process in the semiconductor-based ends 110 in pending zone, and part is positioned at the predetermined processing of not accepting CMP (Chemical Mechanical Polishing) process in the semiconductor-based ends 110 of non-treatment zone.What especially note is, aforesaid fluid flow moving-wire P and process fluid flow moving-wire all can be applicable in the CMP (Chemical Mechanical Polishing) process, and the height of polishing pad 751 and position all can be adjusted according to technology is required.When carrying out CMP (Chemical Mechanical Polishing) process, polishing pad 751 can apply pressure to downwards on the surface, the semiconductor-based ends 110, and perhaps substrate bearing base 130 or fixation kit 216 also can will be lifted to polishing pad 751 surfaces at semiconductor-based the end 110.

Polishing system 714 can also include a sensor 722 that can measure wafer Flatness or material layer thickness, measures semi-conductor substrate 110 each position are carried out an instant Flatness, and measurement can be fed back in the technology immediately.In addition, polishing system 714 can include various types of burnishing devices, for example one rotary (rotary type) burnishing device, a linearity (linear type) burnishing device, a rail mounted (orbital type) burnishing device, or a fixing polishing particulate (fixed abrasive web) system.For instance, when polishing system 714 is a fixing polishing microparticulate systems, polishing pad 751 itself can have various types of polishing particulates, and the process fluid that fluid region control device 720 is supplied can be a deionized water, polishing pad 751 with polishing particulate is cooperating deionized water to get final product the whole semiconductor-based end 110 of tumbling or the specific region at the semiconductor-based end 110, the bulge-structure of the material layer on surface, for example semiconductor-based ends 110.In the actually operating, the size of polishing pad 751 can be 110 bigger than the semiconductor-based end, littler than the semiconductor-based end 110, or the same big with the semiconductor-based end 110.

Also can know by inference thus, when the fluid region control device 320 that is used to clean was equiped with at least one polishing pad, fluid region control device 320 can carry out the traditional chemical mechanical polishing process.

Because fluid region control device 720 can utilize the control fluid to control the position of polishing slurries 158 or deionized water, and the whole semiconductor-based end 110 or the specific region at the semiconductor-based end 110 are polished in the height and the position of control polishing pad 751, so fluid region control device 720 has following advantage.At first, fluid region control device 720 can be adjusted the position of pending zone and non-treatment zone easily, also can adjust the relative position at the semiconductor-based end 110 easily, so can polish at the specific region at the semiconductor-based end 110, and needn't worry that the semiconductor-based end 110 or the material layer that are positioned at other zones are polished and loss or destruction.

Secondly, in traditional etch process, traditional depositing operation, or after traditional glossing, the single semiconductor-based end 110 or surface of a certain material layer tends to occur the not good problem of uniformity coefficient (uniformity) on it, for example after traditional glossing, the edge at the semiconductor-based end 110 can the center can be thicker than approaching.Because fluid region control device 720 can be adjusted the position of pending zone and non-treatment zone easily, also can measure the Flatness at the semiconductor-based end 110 or the thickness of material layer immediately, so the semiconductor-based end 110 or material layer that the energy automatic polishing goes out to have good uniformity coefficient.

Moreover, because fluid region control device 720 is to utilize the control fluid to control the position of required acceptance polishing, therefore fluid region control device 720 can have the polishing pad 751 of arbitrary dimension, usually must be greater than the size at the semiconductor-based end 110 unlike the polishing pad size of conventional polisher platform.In addition, because fluid region control device 720 can apply polishing slurries 158 or deionized water at pending zone, therefore can avoid polishing slurries 158 to touch the zone of other vulnerable to pollution at the semiconductor-based end 110, also can save the usage quantity of polishing slurries 158 or deionized water, avoid unnecessary cost loss.

Be noted that in addition the present invention is used for galvanized fluid region control device 220, fluid region control device 320 that is used to clean and the fluid region control device 720 that is used to polish can carry out art breading to the specific region of wafer.See also Figure 26, what Figure 26 illustrated is an operation chart of fluid region control device of the present invention.As shown in figure 26, fluid region control device can include a fluid mass Controlling System 120 and a system 914, and wherein system 914 can be anode system 114, pipeline system 214 or polishing system 714.Fluid region control device can carry out zonal electroplating technology, cleaning or glossing to semi-conductor substrate 110.The pending zone here need not be limited to crystal face and crystal edge, can correspond to the optional position at the semiconductor-based end 110, for example correspond to certain active region on the wafer, rest part at the semiconductor-based end 110 then can correspond to non-treatment zone, and for example non-treatment zone can correspond to certain neighboring area on the wafer.In other embodiments, pending zone can correspond to the crystal face of wafer, the brilliant back of the body, crystal edge, or any regional area that needs processing, and the rest part of wafer then can correspond to non-treatment zone.

In sum, because the present invention utilizes the control fluid to come CONTROL PROCESS fluidic position, therefore need huge plating tank and a large amount of plating fluids unlike the known electric chemical plating process.In addition, control fluid of the present invention and process fluid can cycling and reutilizations.After control fluid or process fluid reclaim through pipeline, can directly be back to and continue in the fluid region control device to utilize through another pipeline.Perhaps, the process fluid of recovery also can be supplied to and continue in the fluid region control device to utilize through after the instant processing or non-instant processing with the control fluid again.In other words, the present invention can according to the state that reclaims fluid or recovery process fluid and component proportions be added new fluid or process fluid is allocated, also can be to reclaiming fluid or reclaiming process fluid and carry out suitable separating step, then fluid or the process fluid that will handle again is supplied in the fluid region control device.Thus, the present invention can be easily and immediately adjusting process fluidic component proportions and state, makes technology maintain good situation, need not expend tediously long time and huge cost and remove to change process fluid, can also reduce the usage quantity of process fluid.In addition, the also visual process requirements of the present invention provides a heating unit to be arranged in the fluid control device, in order to heating the semiconductor-based end or process fluid, and then promotes the required temperature of reaction of technology or accelerates its speed of response.

On the other hand, fluid region control device of the present invention can make technology only act on the part that need accept art breading at semiconductor-based the end by the control of flow velocity and pipeline, and guarantee that simultaneously technology can not act on the part that need not accept art breading at semiconductor-based the end, therefore can avoid the electrochemistry electroplating technology to plate metal level in Waffer edge, that omits edge metal removes step (edge bevelremoval step, EBR step), and then save process time and technology cost, and reduce the complexity of technology.

Because the present invention can utilize the control fluid to replace known container and come CONTROL PROCESS fluidic position, therefore can break the limitation that conventional apparatus and develop and technological operation equipment miscellaneous.See also Figure 27 to Figure 29, what Figure 27 illustrated is the synoptic diagram of the technological operation equipment 350 of the 4th preferred embodiment of the present invention, Figure 28 is the schematic perspective view of e Foerderanlage 372 shown in Figure 27, and Figure 29 be technological operation equipment 350 shown in Figure 27 in the diagrammatic cross-section in middle level, wherein components identical or position are continued to use identical symbol and are represented.Extremely shown in Figure 29 as Figure 27, technological operation equipment 350 includes a column base station 360, an automatic process Controlling System (automatic process control system, APC system) 324, a plurality of fluid region control device 322, at least one being written into/carry device (loading/unloading device) 366 and at least one e Foerderanlage 372.Column base station 360 can be a vertical type base station, and wherein, technological operation equipment 350 includes upper strata, middle level and lower floor, and each layer all can be connected to six process units.In the present embodiment, one of them process unit in middle level can be aforesaid being written into/carry device 366, and all the other process units can include fluid region control device 322 or other required reaction cabins.Automatic process Controlling System 324 can be detected the technological effect of technological operation equipment 350 immediately, with the parameter setting of instant each technology of adjustment.

Fluid region control device 322 can have the structure of aforesaid fluid regional control device 220, fluid region control device 320 or fluid region control device 720, and being positioned at least one side of column base station 360, an electrochemistry electroplating technology, a cleaning or a CMP (Chemical Mechanical Polishing) process or the like are various to have a fluidic semiconductor technology in order to semi-conductor substrate 110 is carried out.In other words, each fluid region control device 322 has a substrate bearing base 130 and a process system 368 respectively.When fluid region control device 322 was applied to the electrochemistry electroplating technology, process system 368 can be anode system 114; When fluid region control device 322 was applied to cleaning, process system 368 can be pipeline system 214; When fluid region control device 322 was applied to CMP (Chemical Mechanical Polishing) process, 368 of process systems can be polishing system 714.

As shown in figure 29, column base station 360 includes the shell 364 that a cylindrical stent 362 and has corner post shape structure.In present embodiment, shell 364 is a hexagonal column structure, has six sides.Cylindrical stent 362 can be connected to five process systems 368 and one and be written on the middle level/carry device 366, and each process system 368 be written into/carry the side that device 366 can correspond to shell 364.In other embodiment of the present invention, column base station 360 can include the support and the shell of Any shape, the support of for example various corner post shapes, spiral support, or columniform shell or the like.

E Foerderanlage 372 is positioned at around the column base station 360, is written in order to a plurality of semiconductor-based ends 110 are sent to respectively/carry device 366.In the time will carrying out technological operation, the mechanical arm 374 of e Foerderanlage 372 can slide into pending whereabouts of the semiconductor-based ends 110 earlier, to capture a semiconductor-based end 110.Afterwards, utilize e Foerderanlage 372 to move and rotate at the semiconductor-based end 110, the semiconductor-based end 110 is placed in parallel in be written into/carry on the platform of device 366.Be written into/carry device 366 and be and be parallel to the side of column base station 360 and be provided with, in order to be written into and/or carry (load and/or unload) column base station 360 the semiconductor-based end 110, also can have a vacuum pad on it, in order to the fixing semiconductor-based end 110.Mechanical arm 374 is a multiple-piece (multiple blades) mechanical arm preferably, and its joint is all free to rotate, so that mechanical arm 374 can carry out seizing and moving of three-dimensional.

The single semiconductor-based end 110 is positioned over and is written into/carry on the device 366 after, column base station 360 can horizontally rotate and/or move up and down, and the semiconductor-based end 110 is positioned on the substrate bearing base 130 of a fluid region control device 322, then be written into/carrying device 366 rotates and gets back to the position that corresponds to e Foerderanlage 372 originally.At this moment, the step that e Foerderanlage 372 can repeat aforementioned transmission transmits the next semiconductor-based end 110, all is filled with semiconductor substrate 110 on each substrate bearing base 130 of technological operation equipment 350 each layers.

Subsequently, can adopt aforementioned any operating method simultaneously an electrochemistry electroplating technology, a crystal face/crystalline substance back of the body/crystal edge cleaning, a CMP (Chemical Mechanical Polishing) process and/or an electrochemical mechanical polishing technology to be carried out in each semi-conductor substrate 110.After art breading finished, cylindrical stent 362 can horizontally rotate and/or move up and down again, so that column base station 360 is all carried out in each semi-conductor substrate 110.Thereafter, cylindrical stent 362 can continue to load at the pending semiconductor-based end 110 again.

In other embodiment of the present invention, fluid region control device 322 be written into/carry the position of device 366, and all interchangeable or adjustment of technology of being carried out of fluid region control device 322, and technological operation equipment 350 also can include the processing unit of other kinds, for example a drying installation.

Because the present invention utilizes the control fluid to come CONTROL PROCESS fluidic position, place solution tank and the semiconductor-based end 110 will be soaked unlike traditional technology, so in this embodiment, fluid region control device 322 need not be confined to the horizontal positioned mode, and can make all upright operation of the semiconductor-based end 110 and fluid region control device 322.Therefore, technological operation equipment 350 can be designed to the equipment of vertical type, and will be written into/carry device 366 vertical integration in technological operation equipment 350, and then the floor space of effectively saving technological operation equipment 350.In addition, technological operation equipment 350 can also carry out batch (batch) to semi-conductor substrate 110 to be handled, and therefore can promote the output of technology significantly.

In addition, the present invention also can be integrated in same technological operation equipment with fluid region control device and various reaction unit.See also Figure 30, what Figure 30 illustrated is the synoptic diagram of the technological operation equipment 450 of the 5th preferred embodiment of the present invention, and wherein components identical or position are still continued to use identical symbol and represented.As shown in figure 30, technological operation equipment 450 include an automatic process Controlling System 324, and be written into/carry the reaction chamber 486 (for example: solvent cleaning or plasma clean chamber) of device 466, at least one fluid region control device 420, at least one e Foerderanlage 472, at least one seed deposition reaction chamber 478, at least one barrier layer deposition reaction chamber 482, at least one dry reaction chamber 484 and at least one pre-deposition (pre-deposition).

In this embodiment, e Foerderanlage 472 can be a mechanical arm.After being written into of technological operation equipment 450/carry device 466 inserted at the semiconductor-based end 110, e Foerderanlage 472 the semiconductor-based end 110, can be come and gone be transmitted in be written into/carry between device 466, fluid region control device 420, seed deposition reaction chamber 478, barrier layer deposition reaction chamber 482, dry reaction chamber 484 and the pre-deposition reaction chamber 486.Be written into/carry device 466 and can simultaneously go out device, and in other embodiment, technological operation equipment 450 also can also include one year and go out device as one year at this.

Fluid region control device 420 can have the structure of aforesaid fluid regional control device 220, fluid region control device 320 or fluid region control device 720, and an electrochemistry electroplating technology, a cleaning or a CMP (Chemical Mechanical Polishing) process or the like are various to have a fluidic semiconductor technology in order to semi-conductor substrate 110 is carried out.Seed deposition reaction chamber 478 can carry out a seed deposition technology in order to double conductor substrate 110, barrier layer deposition reaction chamber 482 can carry out a barrier layer deposition technology in order to double conductor substrate 110, a drying process and/or an annealing process can be carried out in order to double conductor substrate 110 in dry reaction chamber 484, and pre-deposition reaction chamber 486 is in order to carry out a pre-deposition technology to semi-conductor substrate 110.

What pay special attention to is that in fact seed deposition reaction chamber 478, barrier layer deposition reaction chamber 482, dry reaction chamber 484 are not the necessary element of present embodiment with pre-deposition reaction chamber 486 or the like reaction chamber.Present embodiment is main to be characterised in that, fluid region control device 420 of the present invention does not need to have huge electroplating solution groove, do not need in advance the semiconductor-based end 110 to be installed between cathode electrode and the fixation kit, need not be confined among the vacuum environment yet, therefore can be easily among other reaction units miscellaneous be integrated in same technological operation equipment 450.Therefore, its affiliated technical field has knows that usually the knowledgeable should understand, the seed deposition reaction chamber 478 of present embodiment, barrier layer deposition reaction chamber 482, dry reaction chamber 484 in fact also can be replaced by other process reaction chambers with pre-deposition reaction chamber 486, for example back deposition (post-deposition) reaction chamber, glossing reaction chamber, sputtering process reaction chamber, any chemical vapor deposition reaction chamber or any physical vapor deposition reaction chamber or the like.

See also Figure 31, what Figure 31 illustrated is the synoptic diagram of the technological operation equipment 850 of the 6th preferred embodiment of the present invention, and wherein components identical or position are still continued to use identical symbol and represented.As shown in figure 31, technological operation equipment 850 is a global function formula system (all-in-one system) or a group system (cluster system), include an automatic process Controlling System 324, at least one loading port (loadpart) 816, at least one single-chip compartment (single wafer load lock chamber, SWLLchamber) 830, two pre-washing reaction chambers (pre-cleaning chamber) 840,822, at least one tantalum/deposition of tantalum-nitride reaction chamber (Ta/TaN deposition chamber) 852, at least one copper seed deposition reaction chamber 812, two surge chambers (buffer chamber) 832,842, two copper electrochemicals are electroplated (Cu ECP) reaction chamber 860,802, two copper CMPs (Cu CMP) reaction chamber 870,890, at least one tectum (cap layer) reaction chamber 880, and three mechanical arms 872, utilize this System on Chip/SoC can under the situation that does not need vacuum breaker, carry out all processing steps.

Loading port 816, be used for the loaded with wafers box, is the gangway of wafer case turnover technological operation equipment 850, so that wafer process to be provided.For making the technology that is applicable to mini environments, load port 816 and can have at least one wafer interface 810.Wherein, wafer interface 810 can be a standard mechanical interface (standardmechanical interface, SMIF), to load at least one standardized SMIF type wafer case.Perhaps, the wafer interface 810 at loading port 816 also can be and is suitable for front open type integration cabin (front opening unifiedpod, FOUP) wafer case of form.Be noted that technological operation equipment 850 can include a plurality of loadings port 816, and load port 816 and can have a plurality of wafer interfaces 810 that these load any position that in fact ports 816 or wafer interface 810 can be installed in technological operation equipment 850.

Single-chip compartment 830 can have a directed planar alignment device (orientor), in order to the orientation flat of wafer (orientation), or breach (notch) is aligned to localized position.Perhaps, single-chip compartment 830 can be in order to carry out degasification (degas), cooling, air blowing (pump), clean (purge) or the like step to wafer.Pre-washing reaction chamber 840 can carry out a pre-washing technology to wafer with pre-washing reaction chamber 822 before wafer carries out depositing operation.Titanium/titanium nitride cvd reactive chamber 852 is to be used to wafer surface to deposit a titanium coating and/or titanium nitride layer, and titanium coating or titanium nitride layer can be used as the barrier layer between dielectric layer and the copper layer.Copper seed deposition reaction chamber 812 can deposit a bronze medal crystal seed layer in wafer surface.Surge chamber 832 can be used as the orientation flat aligner with surge chamber 842, also can carry out degasification, cooling, air blowing, cleaning, annealing (anneal) or measure (metrology) or the like step wafer.

Copper electrochemical electroplating reaction chamber 860 can have the structure of aforesaid fluid regional control device 220 with copper electrochemical electroplating reaction chamber 802, in order to an electrochemistry electroplating technology is carried out in semi-conductor substrate 110, to plate the required copper layer of one deck in aforementioned copper crystal seed layer surface.Copper CMP reaction chamber 870 can have the structure of aforesaid fluid regional control device 720 with copper CMP reaction chamber 890, in order to a CMP (Chemical Mechanical Polishing) process is carried out in semi-conductor substrate 110.In addition, copper electrochemical electroplating reaction chamber 860, copper electrochemical electroplating reaction chamber 802, copper CMP reaction chamber 870 all can carry out a pre-washing technology in order to double conductor substrate 110 with copper CMP reaction chamber 890, (post cleaning) technology or a drying process are cleaned in a back.Tectum reaction chamber 880 is to be used to wafer surface deposit a tectum and protect wafer surface; oxidations after the skill that can go into operation in order to the copper leafing of the avoiding wafer operating equipment 850 and form oxide compound also can be avoided the material layer or the device of external pollution thing contact tectum below.

In this embodiment, mechanical arm 872 can be an one chip (single blade) mechanical arm or a multiple-piece (multiple blades) mechanical arm.After wafer was inserted technological operation equipment 850, mechanical arm 872 can come and go wafer to be transmitted in and load between port 816, single-chip compartment 830, surge chamber 832,842 and each reaction chamber 802,812,822,840,852,860,870,880,890.

Its affiliated technical field has knows that usually the knowledgeable should understand, according to required product production (throughput) and product quality (quality), each reaction chamber 802,812,822,840,852,860,870,880,890 of present embodiment in fact also can be replaced by other process reaction chambers, for example back cvd reactive chamber, sputtering process reaction chamber, any chemical vapor deposition reaction chamber or any physical vapor deposition reaction chamber or the like.Present embodiment is to illustrate that with a process for copper the present invention is applied to a last part technology (back-end-of-the-line process, the processing unit of global function formula system BEOL process), its affiliated technical field has knows that usually the knowledgeable also should understand, the present invention need not be confined to process for copper, and can be used to form any required material layer or semiconductor structure.

Moreover the present invention also can utilize conveying belt as the conveying media of the semiconductor-based end 110 in the technological operation device interior.See also Figure 32, what Figure 32 illustrated is the synoptic diagram of the technological operation equipment 550 of the 7th preferred embodiment of the present invention, and wherein components identical or position are still continued to use identical symbol and represented.Shown in figure 32, technological operation equipment 550 include an automatic process Controlling System 324, and be written into/carry device 466, at least one fluid region control device 520, at least one conveying belt 572, at least one seed deposition reaction chamber 478, at least one barrier layer deposition reaction chamber 482, at least one dry reaction chamber 484 and at least one pre-deposition reaction chamber 486.Wherein, fluid region control device 520 can have the structure of aforesaid fluid regional control device 220, fluid region control device 320 or fluid region control device 720, in order to an electrochemistry electroplating technology, a cleaning or a CMP (Chemical Mechanical Polishing) process or the like technology is carried out in semi-conductor substrate 110.

With main different of the 5th embodiment be in, the e Foerderanlage of present embodiment includes a conveying belt 572.After being written into of technological operation equipment 550/carry device 466 inserted at the semiconductor-based end 110, conveying belt 572 can bearing semiconductor substrate 110 comes and goes and is transmitted between fluid region control device 420, seed deposition reaction chamber 478, barrier layer deposition reaction chamber 482, dry reaction chamber 484 and the pre-deposition reaction chamber 486.Because fluid region control device 520 of the present invention do not need in advance the semiconductor-based end 110 to be installed between cathode electrode and the fixation kit, so 550 need of technological operation equipment utilize a simple conveying belt 572 just each reaction chamber can be inserted in the semiconductor-based end 110 to accept art breading.

Traditional electrical chemical plating device, conventional clean technology, or the traditional chemical mechanical polishing apparatus is generally open system, process fluid or the easy loss of chemical substance wherein are in surrounding environment, make the humidity around the device heighten, and may allow the chemical substance that has the tool contaminative in the surrounding environment, so these conventional apparatus are difficult to integrate mutually with other process units.Because the usage quantity of the process fluid of fluid region control device of the present invention reduces, and the process flow physical efficiency reclaimed rapidly by fluid region control device, so fluid region control device itself and fluid region control device can have less humidity on every side.Therefore, fluid region control device of the present invention can overcome the restriction of known devices, is integrated in same technological operation equipment with various reaction unit.Can save the semiconductor-based end on the one hand in the shipping time that each board equipment room comes and goes, can avoid the material layer at the semiconductor-based end in the process of transporting, to suffer extraneous oxidation on the other hand, and then save and removed required huge process time and the technology cost of oxide compound.

In addition, the present invention also can utilize conveying belt and the mechanical arm handling equipment as technological operation equipment simultaneously.See also Figure 33, what Figure 33 illustrated is the synoptic diagram of the technological operation equipment 650 of the 8th preferred embodiment of the present invention, and wherein components identical or position are still continued to use identical symbol and represented.As shown in figure 33, technological operation equipment 650 includes an automatic process Controlling System 324, at least one fluid region control device 620, a conveying belt 672 and a mechanical arm 674.Wherein, fluid region control device 620 can have the structure of aforesaid fluid regional control device 220, fluid region control device 320 or fluid region control device 720, in order to an electrochemistry electroplating technology, a cleaning or a CMP (Chemical Mechanical Polishing) process or the like technology is carried out in semi-conductor substrate 110.Mechanical arm 674 is travelled to and fro between between conveying belt 672 and the fluid region control device 620 in order to transmit the semiconductor-based end 110, and conveying belt 672 is in order to pass and to spread out of technological operation equipment 650 with the semiconductor-based end 110.

In the time will accepting the processing of fluid region control device 620, pending elder generation of the semiconductor-based ends 110 is sent to around the fluid region control device 620 by conveying belt 672.Then, mechanical arm 674 gripping aforesaid semiconductor substrates 110, and the semiconductor-based end 110 is inserted on the substrate bearing base 130 of fluid region control device 620.Thereafter, fluid region control device 620 can carry out an electrochemistry electroplating technology or a cleaning or the like technology to semi-conductor substrate 110 earlier.After treating that fluid region control device 620 is finished dealing with, mechanical arm 674 is put back to the semiconductor-based end 110 on the conveying belt 672 again, and by conveying belt 672 follow-up processing unit is sent at the semiconductor-based end 110.At this moment, 650 of technological operation equipment can continue to handle the next semiconductor-based end 110.

Hence one can see that, because the semiconductor-based end, need not be placed between cathode electrode and the fixation kit earlier, do not need to insert obliquely yet and electroplate in the fluid,, promote the output of product effectively so technological operation equipment of the present invention can a large amount of semiconductor-based end of batch processed.Substrate bearing base can utilize its conveying belt or ring texture directly the semiconductor-based end to be sent to the processing that process fluid is accepted in the predetermined position, therefore technological operation equipment even can omit being written into of the semiconductor-based end/carry device, and the impregnation process at the semiconductor-based end is also more simple than known technology.

The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.

Claims

1. one kind is used for galvanized fluid region control device, includes:

At least one substrate bearing base is in order to carry at least one semiconductor-based end;

At least one cathode electrode is arranged on this substrate bearing base, in order to be electrically connected this semiconductor-based end;

At least one anode system, be positioned at this substrate bearing base top, be provided with corresponding to this semiconductor-based end in essence, and with this substrate bearing base at a distance of a reaction height, defining between this anode system and this cathode electrode has at least one pending zone and at least one non-treatment zone;

At least one control fluid provides pipeline, is provided with corresponding to this non-treatment zone, is used to provide at least one control fluid;

At least one control fluid covering pipeline is provided with corresponding to this non-treatment zone, is used to reclaim this control fluid;

At least one process fluid provides pipeline, is provided with corresponding to this pending zone, is used to provide at least one plating fluid; And

At least one process fluid covering pipeline is provided with corresponding to this pending zone, is used to reclaim this plating fluid.

2. fluid region control device as claimed in claim 1, wherein this fluid region control device is to be applied at least one electrochemistry electroplating technology.

3. fluid region control device as claimed in claim 1, wherein this control fluid is liquid state, gaseous phase, steam condition or colloidal state.

4. fluid region control device as claimed in claim 1, wherein this semiconductor-based end is a wafer, this pending zone is the crystal face that corresponds to this wafer, and this non-treatment zone is the crystal edge that corresponds to this wafer.

5. fluid region control device includes:

At least one substrate bearing base, in order to carry at least one semiconductor-based end, definition has at least one pending zone and at least one non-treatment zone on this substrate bearing base;

At least one fixation kit is arranged on this substrate bearing base, in order to fixing this semiconductor-based end;

At least one process fluid provides pipeline, is provided with corresponding to this pending zone, is used to provide at least one process fluid; And

At least one process fluid covering pipeline is provided with corresponding to this pending zone, is used to reclaim this process fluid.

6. fluid region control device as claimed in claim 5, wherein this fluid region control device is to be applied at least one solvent cleaning technology, at least one electroless-plating technology or at least one brilliant back of the body/crystal edge cleaning.

7. fluid region control device as claimed in claim 5 also includes at least one pipeline system, is positioned at this substrate bearing base top, be provided with corresponding to this semiconductor-based end in essence, and with this substrate bearing base at a distance of a reaction height.

8. fluid region control device as claimed in claim 5 also includes at least one polishing system, is positioned at this substrate bearing base top, is provided with corresponding to this semiconductor-based end in essence.

9. fluid region control device as claimed in claim 8, wherein this polishing system includes at least one polishing pad.

10. technological operation equipment includes:

At least one column base station; And

At least one fluid region control device is positioned at least one side of this column base station, and this fluid region control device includes:

At least one substrate bearing base is parallel to this side of this column base station and is provided with, in order to carry at least one semiconductor-based end;

At least one fixation kit is in order to fixing this semiconductor-based end;

At least one process fluid provides pipeline, is used to provide at least one process fluid;

At least one process fluid covering pipeline is used to reclaim this process fluid;

At least one control fluid provides pipeline, be arranged at this semiconductor-based end around, be used to provide at least one control fluid; And

At least one control fluid covering pipeline, be arranged at this semiconductor-based end around, be used to reclaim this control fluid.

11. technological operation equipment as claimed in claim 10 also comprises at least one automatic process Controlling System.

12. technological operation equipment as claimed in claim 10, wherein this column base station is the vertical type base station.

13. technological operation equipment as claimed in claim 10, wherein this column base station has a plurality of sides.

14. technological operation equipment as claimed in claim 10 also includes at least one being written into/carry device, is positioned at least one side of this column base station, in order to should be written at the semiconductor-based end/carry this column base station.

15. technological operation equipment as claimed in claim 14, wherein this be written into/carry device and be and be parallel to this side of this column base station and be provided with.

16. technological operation equipment as claimed in claim 14 also includes at least one e Foerderanlage, is positioned at around this column base station, is written in order to should be sent to this semiconductor-based end/carry device.

17. technological operation equipment as claimed in claim 16, this semiconductor-based end of this e Foerderanlage rotation earlier wherein, make this semiconductor-based end be parallel to this to be written into/carry device after, should put into this in the semiconductor-based end again to be written into/carry device.

18. technological operation equipment as claimed in claim 10, wherein this column base station has the function that horizontally rotates and move up and down.

19. technological operation equipment as claimed in claim 10, wherein this fixation kit is a cathode electrode, and is electrically connected at this semiconductor-based end.

20. technological operation equipment as claimed in claim 19 also includes at least one anode system, wherein this anode system includes at least one anode electrode and at least one sensor.

21. technological operation equipment as claimed in claim 10, wherein this fluid region control device is to be applied at least one electrochemistry electroplating technology, at least one glossing or at least one crystal face/crystalline substance back of the body/crystal edge cleaning.

22. a technological operation equipment includes:

At least one being written into/carry device, in order to be written into/carry at least one semiconductor-based end;

At least one e Foerderanlage is in order to transmit this semiconductor-based end;

At least one seed deposition reaction chamber is in order to carry out at least one seed deposition technology to this semiconductor-based end; And

At least one fluid region control device includes:

At least one substrate bearing base is in order to this semiconductor-based end of carrying;

At least one fixation kit is in order to fixing this semiconductor-based end;

23. technological operation equipment as claimed in claim 22 also includes at least one barrier layer deposition reaction chamber, in order at least one barrier layer deposition technology is carried out at this semiconductor-based end.

24. technological operation equipment as claimed in claim 22 also comprises at least one automatic process Controlling System.

25. technological operation equipment as claimed in claim 22 also includes at least one dry reaction chamber, in order to an at least one drying process and/or an annealing process are carried out in this semiconductor-based end.

26. technological operation equipment as claimed in claim 22 also includes at least one pre-deposition reaction chamber, in order at least one pre-deposition technology is carried out at this semiconductor-based end.

27. technological operation equipment as claimed in claim 22, wherein this fixation kit is a cathode electrode, and is electrically connected at this semiconductor-based end.

28. technological operation equipment as claimed in claim 27 also includes at least one anode system, wherein this anode system includes at least one anode electrode and at least one sensor.

29. technological operation equipment as claimed in claim 22, wherein this fluid region control device is in order to carried out at least one electrochemistry electroplating technology, at least one crystal face/crystalline substance back of the body/crystal edge cleaning, at least one CMP (Chemical Mechanical Polishing) process and/or at least one electrochemical mechanical polishing technology this semiconductor-based end.

30. technological operation equipment as claimed in claim 22, wherein this technological operation equipment is global function formula system or group system.

31. technological operation equipment as claimed in claim 22, wherein this technological operation equipment is applied at least one process for copper.

32. technological operation equipment as claimed in claim 22, wherein this e Foerderanlage includes at least one mechanical arm or at least one conveying belt.

33. the working method of a fluid region control device includes:

At least one fluid region control device is provided, this fluid region control device includes at least one substrate bearing base, at least one control fluid provides pipeline and at least one control fluid covering pipeline, and definition has at least one pending zone and at least one non-treatment zone in this fluid region control device;

At least one semiconductor-based end is provided, and this semiconductor-based end, be fixed on this substrate bearing base;

Open this control fluid pipeline and this control fluid covering pipeline are provided, make that at least one control fluid continues to provide pipeline to flow out from this control fluid, and flow into this control fluid covering pipeline, wherein this control fluid flows through this non-treatment zone of this fluid region control device; And

At least one process fluid is provided, and this process fluid contacts this pending zone of this fluid region control device, and this process fluid is insoluble to this control fluid.

34. working method as claimed in claim 33, wherein this working method is to be applied at least one electrochemistry electroplating technology, at least one crystal face/crystalline substance back of the body/crystal edge cleaning, at least one CMP (Chemical Mechanical Polishing) process or at least one electrochemical mechanical polishing technology.

35. working method as claimed in claim 33, wherein this process fluid is to electroplate fluid, washing fluid, supercutical fluid or polishing slurries.

36. working method as claimed in claim 33, wherein this control fluid is liquid state, gaseous phase, steam condition, supercutical fluid or colloidal state.

37. working method as claimed in claim 33, wherein this semiconductor-based end is a wafer.

38. working method as claimed in claim 37, wherein this pending zone is the crystal face that corresponds to this wafer, and this non-treatment zone is the crystal edge that corresponds to this wafer.

39. working method as claimed in claim 37, wherein this pending zone is the crystal edge that corresponds to this wafer, and this non-treatment zone is the crystal face that corresponds to this wafer.

40. working method as claimed in claim 37, wherein this pending zone is the crystal face that corresponds to this wafer, and this non-treatment zone is the crystalline substance back of the body that corresponds to this wafer.

41. working method as claimed in claim 37, wherein this pending zone is the crystalline substance back of the body that corresponds to this wafer, and this non-treatment zone is the crystal face that corresponds to this wafer.

42. working method as claimed in claim 37, wherein this wafer has at least one active region and at least one neighboring area.

43. working method as claimed in claim 42, wherein this pending zone is this active region that corresponds to this wafer, and this non-treatment zone is this neighboring area that corresponds to this wafer.