CN101429322B - Encapsulating epoxy resin composition, and electronic parts device using the same - Google Patents

Encapsulating epoxy resin composition, and electronic parts device using the same Download PDF

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Publication number
CN101429322B
CN101429322B CN2008101777498A CN200810177749A CN101429322B CN 101429322 B CN101429322 B CN 101429322B CN 2008101777498 A CN2008101777498 A CN 2008101777498A CN 200810177749 A CN200810177749 A CN 200810177749A CN 101429322 B CN101429322 B CN 101429322B
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China
Prior art keywords
epoxy resin
composition
equal
resin
packaging
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CN2008101777498A
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CN101429322A (en
Inventor
池泽良一
秋元孝幸
高桥佳弘
片寄光雄
渡边尚纪
中村真也
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Priority claimed from JP2002056319A external-priority patent/JP2003253092A/en
Priority claimed from JP2002056324A external-priority patent/JP3840989B2/en
Priority claimed from JP2002097737A external-priority patent/JP3891022B2/en
Priority claimed from JP2002113690A external-priority patent/JP2003327667A/en
Priority claimed from JP2002113651A external-priority patent/JP3870825B2/en
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN101429322A publication Critical patent/CN101429322A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention relates to an encapsulating epoxy resin composition, containing an epoxy resin (A), a curing agent (B), and a composite metal hydroxide (C), and having a disk flow greater than or equal to 80mm. The resin composition is preferably applied for encapsulating a semiconductor device having at least one of features including: (a) at least one of an encapsulating material of an upper side of a semiconductor chip and an encapsulating material of a lower side of the semiconductor chip has a thickness less than or equal to 0.7 mm; (b) a pin count is greater than or equal to 80; (c) a wire length is greater than or equal to 2 mm; (d) a pad pitch on the semiconductor chip is less than or equal to 90 (m; (e) a thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is less than or equal to 2mm; and (f) an area of the semiconductor chip is greater than or equal to 25 mm<2>.

Description

The electronic package of epoxy resin composition for packaging and use said composition
The application is that national applications number is 03804845.0; International application no is PCT/JP2003/000207; The applying date is on January 14th, 2003, and denomination of invention is divided an application for the invention application of " epoxy resin composition for packaging and use the electronic package of said composition ".
This application is based on and advocates the interests of the right of priority of following previous Japanese patent application case: the 2002-No. 113690 of the application on April 16th, the 2002-No. 61268 1 of the application on March 7th, the 2002-No. 056319 1 of the application on March 1st, the 2002-No. 056324 1 of the application on March 1st, the 2002-No. 113651 1 of the Japanese patent application case application on April 16th, the 2002-No. 51643 1 of on February 27th, 2002 application; Reach the 2002-No. 097737 that applied on March 29th, 2002, the content of its announcement is all incorporated this paper definitely into and is classified reference as.The content that the application's case is disclosed yet relates to the 2001-No. 292356 of application on September 25 calendar year 2001; And the 2001-No. 292366 the contained subject content of Japanese patent application case of application on September 25 calendar year 2001, the content of its announcement is all incorporated this paper definitely into and is classified reference as.
Technical field
The present invention relates to a kind of epoxy resin composition for packaging and use the electronic package of this composition epoxy resin.
Background technology
In the field of the component package that is used for electronic component such as transistor or IC, with regard to productivity or manufacturing cost, resin package has become main trend so far.In resin composition for sealing, composition epoxy resin is widely used.The flame retardant resistance of this epoxy resin composition for packaging mainly is that the combination through bromide resin such as tetrabromo one bisphenol A diglycidyl ether and weisspiessglanz is achieved.
By the viewpoint of environmental protection, be that the halogenide resin of representative and the use of antimony compounds gradually receive control in recent years with the decabromodiphynly oxide.For epoxy resin composition for packaging, also require to use without halogenation (without bromination) and not stibiated compound.In addition, because general known bromine compounds can produce adverse influence to the high-temperature storage characteristics of plastic package IC, so also need reduce the use of brominated resins.As for the method that need not to use brominated resins and weisspiessglanz in order to reach flame-retardancy standards; Once the someone attempted some kinds of methods; Comprise the fire retardant that uses beyond halogenide and the antimony compounds, for example the method for red phosphorus, phosphate compound, phosphorus nitrence (phosphazene) compound, metal hydroxides, MOX and organometallic compound, increase the method for filler content etc.In addition, the method (No. the 2000-53875, the open WO98/47968 of international application, the open case of japanese unexamined patent) of using complex metal hydroxide is also arranged.
Summary of the invention
Know with regard to the inventor, belong to without halogenation and not each fire retardant of stibiated compound do not reach as yet and be equivalent to contain the two mouldability that epoxy resin composition for packaging had and reliability of brominated resins and weisspiessglanz.For example, under under conditions, exist various problems: when using red phosphorus, can cause the reduction of moisture resistance; When using phosphate compound or phosphorus nitrence compound, can cause the reduction of mouldability and moisture resistance owing to plasticizing efficiency; When using metal hydroxides, can cause the reduction of flowability or release property; When using MOX or increasing amount of filler, can cause mobile reduction; And when using organometallic compound (for example cupric acetylacetonate), can cause sclerous reaction to be obstructed, and the reduction of mouldability.
In addition, along with the use progress of research to metal hydroxides, this case contriver finds to use metal hydroxides to reduce the release property under shearing, and uses complex metal hydroxide likewise also to reduce the release property under shearing.
Therefore; The objective of the invention is suitable mouldability and safety when not reducing the VLSI encapsulation; Like anti-reflow property, moisture resistance, and under the situation of high temperature storage property, a kind of non-halogenated and non-antimony and epoxy resin composition for packaging with good release property and flame retardant resistance is provided.
Another object of the present invention provides the electronic package that comprises with the element of epoxy resin composition for packaging encapsulation.
According to first aspect of the present invention, provide a kind of epoxy resin (A), solidifying agent (B) of containing, and complex metal hydroxide (C), and the epoxy resin composition for packaging that under shearing behind 10 material feeding mouldings, has the knockout press that is less than or equal to 200KPa.
According to second aspect of the present invention, provide a kind of foundation epoxy resin composition for packaging that is used to encapsulate semiconducter device of the present invention with at least a following characteristics:
(a) at least one of the packaged material of the packaged material of semi-conductor chip upside and semi-conductor chip downside has the thickness that is less than or equal to 0.7mm;
(b) pin count (pin count) is more than or equal to 80;
(c) conductor length is more than or equal to 2mm;
(d) the weld pad spacing on the semi-conductor chip is less than or equal to 90 μ m;
(e) thickness that on equipped base material, disposes the packaged piece of semi-conductor chip is less than or equal to 2mm; And
(f) area of semi-conductor chip is more than or equal to 25mm 2
According to the third aspect of the invention, provide a kind of electronic package that comprises the element that encapsulates with epoxy resin composition for packaging of the present invention.
Description of drawings
Figure 1A to 1C shows an instance (QFP) of semiconducter device.Figure 1A is a sectional view, and Figure 1B is the partial top view of perspective, and Fig. 1 C is the enlarged view of weld pad (bonding pads) part.
Fig. 2 A to 2C shows the instance of semiconducter device (BGA, BGA (ball grid array)).Fig. 2 A is a sectional view, and Fig. 2 B is the partial top view of perspective, and Fig. 2 C is the enlarged view of weld pad part.
Fig. 3 A and 3B are the synoptic diagram of module array type BGA element instance.
Fig. 4 and Fig. 5 are the synoptic diagram that shows lead deviation ratio (wire sweep rate) measuring method.
Embodiment
According to first aspect of the present invention; Provide a kind of epoxy resin composition for packaging (back literary composition; Abbreviate resin combination as); Said composition contains epoxy resin (A), solidifying agent (B) and complex metal hydroxide (C), and under shearing behind 10 material feeding mouldings, has the knockout press that is less than or equal to 200KPa.Also promptly, the release property of resin combination is less than or equal to 200KPa for the knockout press under in 10 material feeding mouldings, shearing becomes.
Here, be demonstration divests the degree of moulding object from mould when resin combination is used for the moulding semiconducter device pointer shearing knockout press down.Above-mentioned mensuration is to carry out as follows.180 ℃ die temperature, the molding pressure of 6.9MPa, and under the condition of 90 second set time, moulding has the disk of 20mm diameter on the chromium plating stainless steel plate of 50mm * 35mm * O.4mm.Behind moulding, pull out stainless steel plate at once and measure maximum force-to-stretch.Measured maximum stretching force promptly is illustrated in the power of touching of taking off under the shearing.Under the same conditions, continue repetition 10 times (10 material feedings) or more times, be preferably the moulding of about 20 times (20 material feedings) and in the knockout press of measuring at once behind each moulding under shearing.Viewpoint by mouldability; Knockout press in 10 mouldings under shearing need become and is less than or equal to 200KPa and (also is; Knockout press under shearing behind 10 material feeding mouldings is less than or equal to 200KPa); Be preferably and be less than or equal to 150KPa, be more preferred from and be less than or equal to 100KPa, be more preferred from again and be less than or equal to 50KPa.
The resin combination that under shearing behind 10 material feeding mouldings, has the knockout press that is less than or equal to 200KPa shows good release property, and the defective in the time of can reducing the demoulding such as the fracture of gate (gate break) (residue of the packaged material in the cast gate) reach and in the semiconducter device manufacturing, attach to mould.Therefore, this resin combination can reduce the fracture that produces faulty moulding such as gate, attaches to mould, even therefore when being used for the semiconducter device of slim, multioutlet number, long side traverse and narrow weld pad spacing, also can promote safety.Especially be preferable to use this resin combination as the packaged material of the semiconductor device by using of second aspect present invention.
This resin combination contains epoxy resin (A), solidifying agent (B), and complex metal hydroxide (C).
As the epoxy resin of composition (A), can use the known epoxy resin that generally is used for composition epoxy resin, be not limited in this respect.
Nonrestrictive particular instance comprises the phenolic resin varnish type epoxy resin (phenol-phenolic resin varnish, former cresols-phenolic resin varnish type epoxy resin etc.) that obtains via the oxirane formation of phenolic varnish type resin; Wherein this phenolic varnish type resin is via for example phenols of phenol, cresols, xylenol, Resorcinol, catechol, dihydroxyphenyl propane and Bisphenol F (phenol system) and/or the aphthols of α-naphthols, β-naphthols and dihydroxy naphthlene (naphthols system) for example, in the presence of an acidic catalyst, carries out condensation or cocondensation reflection with the compound with aldehyde radical of for example formaldehyde, acetaldehyde, propionic aldehyde, phenyl aldehyde and salicylic aldehyde and the product that makes; The Racemic glycidol ethers (bisphenol-type epoxy resin class) of dihydroxyphenyl propane, Bisphenol F, bisphenol S etc.; Without replacing or through the Racemic glycidol ethers (biphenyl type epoxy resin class) of the substituted bis-phenol of alkyl; Stilbene type epoxy resin; Hydroquinone type epoxy resin; Via the polyprotonic acid of for example phthalandione and dimeracid and epichlorohydrin reaction and the glycidyl ester type epoxy resin that makes; Via the polyamine of for example diaminodiphenyl-methane and tricarbimide and epichlorohydrin reaction and the glycidyl amine type epoxy resin that makes; The epoxidation product of the polymkeric substance of the copolycondensation of Dicyclopentadiene (DCPD) and phenols (dicyclopentadiene-type epoxy resin); Epoxy resin (naphthalene type epoxy resin) with naphthalene nucleus; The epoxidation product of the aralkyl-type phenol resins of phenol-aralkyl resin and naphthols-aralkyl resin for example; Trimethylolpropane type epoxy resin, terpene modified epoxy resin; Come the olefin oxide key and the linear aliphatic epoxy resin that makes with the peracid of for example peroxy acetic acid; Cycloaliphatic epoxy resin; The epoxy resin of sulfur atom-containing; And triphenyl methane type epoxy resin.These resins can use or make up use separately.
Wherein, with regard to anti-reflow property, serve as preferred with the epoxy resin of biphenyl type epoxy resin, bisphenol f type epoxy resin, stilbene type epoxy resin and sulfur atom-containing; With regard to sclerosis character; With the phenolic resin varnish type epoxy resin is preferred, have in mind with regard to the low tide absorptivity, and be preferred with the dicyclopentadiene-type epoxy resin; And with regard to thermotolerance and low warpage properties, serve as preferred with naphthalene type epoxy resin and triphenyl methane type epoxy resin.
In above-mentioned eight kinds of preferred epoxy resin; Comprise biphenyl type epoxy resin, Bisphenol F type epoxy is counted fat, stilbene type epoxy resin, the epoxy resin of sulfur atom-containing, phenolic resin varnish type epoxy resin; Dicyclopentadiene-type epoxy resin, naphthalene type epoxy resin and triphenyl methane type epoxy resin can use the combination of above-mentioned each epoxy type epoxy resin or multiple above-mentioned epoxy resin.The combined amount of these epoxy resin is in the total amount of epoxy resin, is preferably more than or equals 50 weight %, more preferably more than or equal to 60 weight %, further is preferably more than or equals 80 weight %.The instance of biphenyl type epoxy resin comprises the epoxy resin shown in the formula (IV); The instance of bisphenol f type epoxy resin comprises the epoxy resin shown in the formula (V); The instance of stilbene type epoxy resin comprises the epoxy resin shown in the formula (VI); The instance of the epoxy resin of sulfur atom-containing is included in and contains sulphide bond or sulfone key person in the main chain or in side chain, comprise functional group's (for example sulfenyl and sulfonic group) person of containing sulphur atom, and these resins can use or make up use separately.In the above-mentioned epoxy resin, be preferable with the compound shown in the above-mentioned general formula (III).These four kinds of epoxy resin can use or make up use separately, and its combined amount is preferably more than or equal to 20 weight % in the total amount of epoxy resin, are more preferred from more than or equal to 30 weight %, and the best is more than or equal to 50 weight %, to obtain the usefulness of epoxy resin.
Figure G2008101777498D00051
(in formula (IV), R 1To R 8Each other can be identical or different, respectively be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, n is 0 to 3 integer.)
Figure G2008101777498D00061
(in the formula V, R 1To R 8Can be same to each other or different to each other, and respectively be selected from Wasserstoffatoms, have the alkyl of 1 to 10 carbon atom, have the alkoxyl group of 1 to 10 carbon atom, have the aryl of 6 to 10 carbon atoms and have the aralkyl of 6 to 10 carbon atoms, and n be 0 to 3 integer.)
Figure G2008101777498D00062
(in the formula (VI), R1 to R8 can be same to each other or different to each other, and respectively be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, and n is 0 to 3 integer.)
Figure G2008101777498D00063
(in the formula (III), R1 to R8 can be same to each other or different to each other, and respectively be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, and n is 0 to 3 integer.)
The instance of the biphenyl type epoxy resin shown in the following formula (IV) comprises: comprise 4,4 '-two (2,3-glycidoxy) biphenyl or 4,4 '-two (2; 3-glycidoxy)-3,3 ', 5; 5 '-tetramethyl biphenyl is the epoxy resin of staple, and by epoxy chloropropane and 4,4 '-bis-phenol or 4,4 '-(3; 3 ', 5,5 '-tetramethyl-) '-biphenyl diphenol reaction and the epoxy resin that makes.In the above-mentioned epoxy resin, with comprise 4,4 '-two (2,3-glycidoxy)-3,3 ', 5,5 '-tetramethyl biphenyl is that the epoxy resin of staple is preferable.
The instance of the bisphenol f type epoxy resin shown in the above-mentioned logical formula V comprises: commercially available article YSLV-80XY (trade(brand)name, Nippon Steel chemistry limited-liability company system; Be the trade(brand)name of Tohto Kasei limited-liability company at present).The staple of YSLV-80XY comprises R 1, R 3, R 6And R 8Be methyl, R 2, R 4, R 5Be hydrogen, and n is 0.
Stilbene type epoxy resin shown in the general formula (VI) can via and styrene type phenol and epoxy chloropropane in the existence of alkaline matter reaction and making down.The limiting examples of stilbene type phenol comprises: 3-tertiary butyl-4,4 '-dihydroxyl-3 ', 5,5 '-trimethylammonium stilbene, 3-tertiary butyl-4; 4 '-dihydroxyl-3 ', 5,6-trimethylammonium stilbene, 4,4 '-dihydroxyl-3; 3 ', 5,5 '-tetramethyl-stilbene, and 4; 4 '-dihydroxyl-3,3 '-di-t-butyl-5,5 '-dimethyl-stilbene, 4; 4 '-dihydroxyl-3,3 '-di-t-butyl-6,6 '-dimethyl-stilbene.These stilbene type phenol can use or make up use separately.In the above-mentioned stilbene type phenol, with 3-tertiary butyl-4,4 '-dihydroxyl-3 ', 5,5 '-trimethylammonium stilbene and 4,4 '-dihydroxyl-3,3 ', 5,5 '-tetramethyl-stilbene is preferable.
In the epoxy resin of the sulfur atom-containing shown in the general formula (III), with have be selected from Wasserstoffatoms and contain 1 to 10 carbon atom through replacing or without the R of substituted alkyl 1To R 8Epoxy resin be preferable.In addition, with R 2, R 3, R 6And R 7Be hydrogen, R 1, R 4With R 8For the epoxy resin of alkyl for better.Again with R 2, R 3, R 6And R 7Be hydrogen, R 1With R 8Be the tertiary butyl and R 4With R 5For the epoxy resin of methyl is best.As for above-mentioned resin, YSLV-120TE (trade(brand)name, Nippon Steel chemistry limited-liability company system for example; Be the trade(brand)name of Tohto Kasei limited-liability company at present) be commercially available article.
As for composition (A), except that the epoxy resin of sulfur atom-containing, also can use one or more cited epoxy resin of this paper.Under this situation, the combined amount of the epoxy resin of sulfur atom-containing is not remembered with the total amount of epoxy resin, is preferably to be less than or equal to 50 weight %.When its amount surpassed 50 weight %, the epoxy resin of sulfur atom-containing can't show its excellent characteristic.
The instance of phenolic resin varnish comprises the epoxy resin shown in the formula (VII).
(in formula (VII), R be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, n is 0 to 10 integer.)
Phenolic resin varnish type epoxy resin shown in the above-mentioned general formula (VII) can be only via phenolic resin varnish type epoxy resin and epichlorohydrin reaction and make.Particularly; As for the R in the general formula (VII); To have the alkyl of 1 to 10 carbon atom; For example methyl, ethyl, propyl group, butyl, sec.-propyl and isobutoxy and alkoxyl group with 1 to 10 carbon atom are preferable like methoxyl group, oxyethyl group, propoxy-, butoxy, and with hydrogen and methyl for better.N is preferably 0 to 3 integer.In the phenolic resin varnish type epoxy resin shown in the general formula (VII), be preferable with former cresols-phenolic resin varnish type epoxy resin.
When using phenolic resin varnish type epoxy resin, the combined amount of this epoxy resin is preferably more than or equal to 20 weight % in the total amount of epoxy resin, is more preferred from more than or equal to 30 weight %, to show its characteristic.
The instance of dicyclopentadiene-type epoxy resin comprises the epoxy resin shown in the formula (VIII).
(in formula (VIII), R 1And R 2Be independently be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, n is 0 to 10 integer, and m is 0 to 6 integer).
The limiting examples of R1 in the above-mentioned general formula (VIII) comprises: Wasserstoffatoms; Alkyl like methyl, ethyl, propyl group, butyl, sec.-propyl and the tertiary butyl; Alkenyl like vinyl, allyl group and crotonyl; Through amino substituted alkyl; As through the substituted alkyl of sulfydryl have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl.As stated, be preferable through replacement or without substituted univalence hydrocarbyl with what have 1 to 5 carbon atom.For better, and is the best with methyl and hydrogen with the alkyl of for example methyl and ethyl and Wasserstoffatoms.R 2Limiting examples comprise: Wasserstoffatoms; Have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, these alkyl comprise the for example alkyl of methyl, ethyl, propyl group, butyl, sec.-propyl and the tertiary butyl; The alkenyl of vinyl, allyl group and crotonyl for example; And through amino substituted alkyl with through the substituted alkyl of sulfydryl.Particularly, as stated in, with have 1 to 5 carbon atom through replacing or be preferable without substituted univalence hydrocarbyl, and with Wasserstoffatoms for better.
When using dicyclopentadiene-type epoxy resin, the combined amount of this epoxy resin is preferably more than or equal to 20 weight % in the total amount of epoxy resin, is more preferred from more than or equal to 30 weight %, to show its characteristic.
The instance of naphthalene type epoxy resin comprises the epoxy resin shown in the formula (IX), and the instance of triphenyl methane type epoxy resin comprises the epoxy resin shown in the general formula (X).
(in formula (IX), R 1To R 3Can be same to each other or different to each other, be selected from Wasserstoffatoms and have 1 to 12 carbon atom through replacing or without substituted univalence hydrocarbyl.P is 1 or 0, and h and m are respectively 0 to 11 integer, and summation (h+m) is 1 to 11 integer, and summation (h+p) is 1 to 12 integer, and h, each need meet above-mentioned condition m and p.I is 0 to 3 integer, and j is 0 to 2 integer, and k is 0 to 4 integer.)
Figure G2008101777498D00092
(in formula (X), R be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, n is 1 to 10 integer.)
The limiting examples of the naphthalene type epoxy resin shown in the above-mentioned general formula (IX) comprises: randomly comprise h constitute unit and m constitute unitary random copolymers, alternately comprise two kinds constitute unitary alternating copolymers, with regular fashion comprise two kinds constitute unitary multipolymers, and block comprise two kinds of unitary segmented copolymers of formation.These resins can use or make up use separately.
Naphthalene type epoxy resin and triphenyl methane type epoxy resin can use or make up use separately; And its combined amount is in the total amount of epoxy resin; Be preferably more than or equal to 20 weight %; Be more preferred from more than or equal to 30 weight %, the best is more than or equal to 50 weight %, to show the usefulness of epoxy resin.
As for composition (B) solidifying agent, can use generally to be used for known composition epoxy resin and not have particular restriction.The unrestricted instance of this solidifying agent comprises: the phenolic varnish type phenol resins; It is via for example phenols of phenol, cresols, Resorcinol, catechol, dihydroxyphenyl propane, Bisphenol F, phenol and amino phenol (phenol system) and/or the aphthols of α-naphthols, β-naphthols and dialkyl naphthalene (naphthols system) for example, in the presence of an acidic catalyst, carries out condensation or cocondensation reaction with the compound with aldehyde radical of for example formaldehyde, phenyl aldehyde and salicylic aldehyde and makes; The aralkyl-type phenol resins of phenol-aralkyl resin and naphthols-aralkyl resin for example, it is to be synthesized into via phenol and/or naphthols and dimethoxy p-Xylol or two (methoxymethyl) biphenyl; The dicyclopentadiene-type phenol resins of dicyclopentadiene-type phenol-novolac resin and dicyclopentadiene-type naphthols-novolac resin for example, it is to carry out copolymerization and make (dicyclopentadiene-type epoxy resin) via phenols and/or aphthols and Dicyclopentadiene (DCPD); Terpene modified epoxy resin; The biphenyl type phenol resins; And triphenyl methane type phenol resins.These resins can use or make up use separately.
As stated, with regard to flame retardant resistance, be preferable with the biphenyl type phenol resins; With regard to anti-reflow property and hardening, be preferable with the aralkyl-type phenol resins, with regard to low moist absorptivity; With the dicyclopentadiene-type phenol resins is preferable, with regard to thermotolerance, low-expansion coefficient and low warpage properties, is preferable with triphenyl methane property phenol resins; And with regard to hardening, be preferable with novolak phenol resins.Therefore, preferablely comprise at least above-mentioned-kind of phenol resins.
As for the biphenyl type phenol resins, enumerate the phenol resins shown in the formula (XI), for example:
Figure G2008101777498D00101
In following formula (XI), R 1To R 9Can respectively be same to each other or different to each other, respectively be selected from the alkyl with 1 to 10 carbon atom of Wasserstoffatoms, for example methyl, ethyl, propyl group, butyl, sec.-propyl and isobutyl-and for example be the aryl with 6 to 10 carbon atoms of alkoxyl group, for example phenyl, tolyl and the xylyl with 1 to 10 carbon atom of methoxyl group, oxyethyl group, propoxy-and butoxy, and the aralkyl with 6 to 10 carbon atoms of phenmethyl and styroyl for example.Wherein, be preferable with hydrogen and methyl, n is 1 to 10 integer.
The limiting examples of the biphenyl type phenol resins shown in the above-mentioned general formula (XI) comprises: contain R 1To R 8Complete is the compound of hydrogen, wherein, with regard to melting viscosity, is preferable to contain more than or equal to the n of 50 weight % more than or equal to the mixture of 1 condensation reaction products.Like MEH-7851 (trade(brand)name, bright and chemical plastic cement Industries, Inc system) compound is commercially available article.
When using the biphenyl type phenol resins, the combined amount of this resin is preferably more than or equal to 30 weight % in the total amount of solidifying agent, is more preferred from more than or equal to 50 weight %, and reaching the best is more than or equal to 60 weight %, to show its usefulness.
The limiting examples of aralkyl-type phenol resins comprises: phenol-aralkyl resin and naphthols-aralkyl resin.Phenol-aralkyl resin with shown in the formula (XII) is preferable, and is that the MV of hydrogen and n is that phenol-aralkyl resin of 0 to 8 is for better with the R in the general formula (XII).
Figure G2008101777498D00111
(in the formula (XII), R be also from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, and n is 0 to 10 integer.)
Its particular instance comprises right-diformazan penylene type phenol-aralkyl resin, and between-diformazan penylene type phenol-aralkyl resin.When using aralkyl-type phenol resin, in order to obtain its effect,, desire to give the blended consumption and be preferably more than or equal to 30wt% with respect to the total amount of solidifying agent, be more preferred from more than or equal to 50wt%.
As for dicyclopentadiene-type resol, can enumerate the resol shown in the following general expression (XIII).
Figure G2008101777498D00112
(in formula (XIII), R 1And R 2Be warp replacement or the unsubstituted univalence hydrocarbyl that independently is selected from Wasserstoffatoms and has 1 to 10 carbon atom, n and m are respectively 0 to 10 and 0 to 6 integer.
When using the dicyclopentadiene-type phenol resins, the combined amount of this resin is preferably more than or equal to 30 weight % in the total amount of solidifying agent, is more preferred from more than or equal to 50 weight %, to show its usefulness.
Instance as for triphenyl methane type phenol resins comprises the phenol resins shown in the formula (XIV):
Figure G2008101777498D00121
(in formula (XIV), R be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl, n is 1 to 10 integer.)
When using triphenyl methane type phenol resins, the combined amount of this resin is preferably more than or equal to 30 weight % in the total amount of solidifying agent, and is more preferred from more than or equal to 50 weight %, to show its usefulness.
The instance of phenolic varnish type phenol resins comprises phenol-novolac resin, cresols-novolac resin, reaches naphthols-novolac resin.Be preferable wherein with phenol-novolac resin.When using the phenolic varnish type phenol resins, the combined amount of this resin is preferably more than or equal to 30 weight % in the total amount of solidifying agent, and is more preferred from more than or equal to 50 weight %, to show its usefulness.
Comprise biphenyl type phenol resins, aralkyl-type phenol resins, dicyclopentadiene-type phenol resins, triphenyl methane type phenol resins, and the above-mentioned resin of phenolic varnish type phenol resins can use or make up use separately.When using above-mentioned a kind of resin, the combined amount of this resin is preferably more than or equal to 30 weight % in the total amount of solidifying agent (B), be more preferred from more than or equal to 50 weight %, and the best is more than or equal to 60 weight %, to show its usefulness.When mixing any two or more resins, the combined amount of these resins is preferably more than or equal to 60 weight % in the total amount of solidifying agent, and is more preferred from more than or equal to 80 weight %.
The equivalence ratio of epoxy resin (A) and solidifying agent (B), that is the hydroxyl in the solidifying agent (B) does not have particular restriction to the ratio (that is, the hydroxy number in the solidifying agent is divided by the epoxy group(ing) number in the epoxy resin) of the epoxy group(ing) in the epoxy resin (A).Yet preferable this ratio being set in 0.5 to 2 the scope, and be more preferably under in 0.6 to 1.3 the scope, to reduce unreacted component.With regard to promoting mouldability and anti-reflow property, this ratio in 0.8 to 1.2 scope for better.
Composition (C) complex metal hydroxide is as fire retardant, and this complex metal hydroxide is the oxyhydroxide by multiple metal, and promptly solid solution or its mixture of two kinds or more kinds of metal hydroxides are formed.With regard to promoting mouldability and minimizing molding defect (for example hole), this complex metal hydroxide is preferably during room temperature is extremely equipped stable under the residing temperature.When complex metal hydroxide is during as fire retardant, be preferably composition in this TR (A) and (B) can cause dehydration reaction, and in this TR composition (A) and (B) can decompose.The method of manufacture of any known complex metal hydroxide capable of using.For example, the complex metal hydroxide metal-salt that will be dissolved in the good solvent capable of using splashes into the precipitator method of alkaline aqueous solution gradually and makes.
As long as can not have particular restriction though can show usefulness of the present invention, (compound shown in the C-I) is preferable as composition (C) with following chemical constitution formula.
p(M 1aOb)·q(M 2cOd)·r(M 3cOd)·mH 2O (C—I)
(formula (among the C-I), M 1, M 2And M 3Be the different metallic element each other, and a, b, c, d, p, q and m are positive number, r is 0 or positive number.)
In above-mentioned, with above-mentioned formula (r among the C-I) is 0 compound, that is following chemical constitution formula (compound shown in the C-II) is preferable.
M(M 1aOb)·n(M 2cOd)·h(H 2O) (C—II)
(formula (among the C-II), M 1And M 2The metallic element that representative differs from one another, and a, b, c, d, m, n and h are positive number.)
In the above-mentioned chemical constitution formula (M among the C-I) 1And M 2Be the different metallic element each other, and these metallic elements are not had particular restriction.With regard to preferable flame retardant resistance, though avoid being M 1And M 2Select identical metal, but M 1Be preferably and be selected from metallic element, IIA family alkali earth metal that belongs to the period 3 and the cohort that metallic element becomes that belongs to IVB, IIB, VIII, IB, IIIA and IVA family, and M 2Be preferably the transition metal that is selected from IIIB to IIB family.Metal M 1 is better to be to be selected from magnesium, calcium, aluminium, tin, titanium, iron, cobalt, nickel, copper and cohort that zinc becomes, and M 2Better is chosen from Fe, cobalt, nickel, copper and cohort that zinc becomes.With regard to mobile, M 1Be preferably magnesium, and M 2Be preferably zinc or nickel, and with M 1Be magnesium, and M 2For the situation of zinc for better.This paper metallic element comprises so-called semimetallic elements, that is metallic element is represented all elements beyond the non-metallic element.The microscler formula of the classification criterion periodic law table of metallic element, wherein typical element belongs to A family, and transition element belongs to B family; This classification source is The Encyclopedia Chimica, the 4th, the 30th minimo; On February 15th, 1987, Kyoritsu Shuppan limited-liability company publishes.
Though (mol ratio of p, q and r among the C-I) does not have particular restriction to above-mentioned chemical constitution formula, and r is preferably 0, and the molar ratio of p and q (p/q) is preferably 99/1 to 50/50.In other words, (m among the C-II) and the molar ratio (m/n) of n are preferably 99/1 to 50/50 to above-mentioned chemical constitution formula.
With regard to commercial complex metal hydroxide, composition (C) has for example commercially available article EchomagZ-20 (trade(brand)name, Tateho chemical industry limited-liability company system).
The shape of complex metal hydroxide does not have particular restriction, however with regard to mobile, suitable thickness polyhedron-shaped than flat pattern for better.Compare with metal hydroxides, be prone to obtain the polygonal crystal of complex metal hydroxide.Though the amount of desire blended complex metal hydroxide does not have particular restriction to the amount of resin combination; But with regard to flame retardant resistance; To be preferable, with regard to mobile and anti-reflow property, be preferable to be less than or equal to 20 weight % more than or equal to 0.5 weight %; For better, and is the best with the scope of 1.4 to 12 weight % with the scope of 0.7 to 15 weight %.
In first preferred embodiment,, can mix mineral filler (D) in order to reduce moist absorptivity and linear expansivity and to promote thermal conduction degree and intensity.The limiting examples of mineral filler comprises: fused silica, crystalline silica, aluminum oxide, zircon, Calucium Silicate powder, lime carbonate, potassium titanate, silit, silicon nitride, aluminium nitride AlN, SP 1, beryllium oxide, zirconium white, forsterite, steatite, spinel, mullite, and powder or the spheric bead and the glass etc. of titanium oxide etc.Use can used or make up to these mineral fillers separately.Wherein, with regard to reducing linear expansivity, be preferable with fused silica, with regard to preferable thermal conduction degree, be preferable with aluminum oxide, with regard to flowability during with regard to moulding and the mould wearability, the filler shape is preferable with sphere.
With regard to the moist absorptivity of anti-reflow property, flowability, flame retardant resistance, mouldability, reduction and linear expansivity, and lifting intensity with regard to; The combined amount of this composition (D) is in the total amount of resin combination; Be preferably more than or equal to 60 weight %; Be more preferred from more than or equal to 75 weight %, the best is more than or equal to 80 weight %, and further the best is more than or equal to 88 weight %.On the other hand, the combined amount of this composition (D) is preferably and is less than or equal to 95 weight %, and is more preferred from and is less than or equal to 92 weight %.That is preferred range is between 70 to 95 weight %, and better scope is between 75 to 92 weight %.Perhaps look purposes of being desired etc. and decide, preferred range is between 80 to 95 weight %, and better scope is between 88 to 92 weight %.When combined amount is less than 60 weight %, flame retardant resistance and anti-reflow property variation, and when combined amount surpassed 95 weight %, it is not enough that flowability becomes.
In second preferred embodiments, optionally can use hardening accelerator (E) with the reaction between intensifier ring epoxy resins (A) and solidifying agent (B).Though the combined amount of composition (E) does not have particular restriction, as long as present in an amount at least sufficient to accelerated reaction,, be preferably 0.005 to 2 weight % in the total amount of resin combination, be more preferred from 0.01 to 0.5 weight %.When the amount of hardening accelerator was lower than 0.005 weight %, then hardening can variation in the short period of time, and when its amount is higher than 2 weight %, and then hardening rate is too fast and be difficult to make good moulded work.
As for hardening accelerator, general capable of using being used in the known composition epoxy resin do not have particular restriction.The non-limiting example of hardening accelerator comprises: cyclic amidine compounds, for example 1,8-diaza-two ring (5,4,0) hendecene-7; 1,5-diaza-two ring (4,3,0) nonene and 5; 6-dibutylamino-1,8-diaza-two ring (5,4,0) hendecene-7); Nationality is by adding above-mentioned cyclic amidine compounds and for example toxilic anhydride or naphtoquinone compounds, for example 1,4-benzoquinones, 2; 5-toluquinone, 1,4-naphthoquinones, 2,3-diformazan benzoquinones, 2; 6-toluquinone, 2,3-dimethoxy-5-methyl-1,4-benzoquinones, 2; 3-dimethoxy-1,4-benzoquinones and phenyl-1,4-benzoquinones, benzene diazonium methane, and the phenol resins equimolecular in compound and make have an intramolecularly polar compound of tool π key; Tertiary amine class, for example phenmethyl n n dimetylaniline, trolamine, dimethylaminoethanol, three (dimethylamino methyl) phenol) and verivate; Imidazoles, for example 2-Methylimidazole, 2-phenylimidazole, 2-phenyl-4-Methylimidazole) and verivate; Phosphine compound, for example tributylphosphine, methyldiphenyl base phosphine, triphenylphosphine, three (4-aminomethyl phenyl) phosphine, diphenylphosphine, and Phenylphosphine; Nationality is by the compound that adds tool π key in above-mentioned phosphine compound and the molecule, for example above-mentioned toxilic anhydride, naphtoquinone compounds, benzene diazonium methane, reaches phenol resins etc., and make have an intramolecularly polar phosphorus compound; Tetraphenyl borate salts, for example tetraphenyl boric acid tetraphenylphosphonium, tetraphenyl boric acid triphenylphosphine, tetraphenyl boric acid 2-ethyl-4-Methylimidazole, tetraphenyl boric acid N-methylmorpholine and verivate thereof.These hardening accelerators can use or make up use separately.
With regard to hardening, the preferable phosphine compound that contains of composition (E).In in the case, the preferable naphtoquinone compounds that further contains of this resin combination.With regard to hardening and flowability, the preferable affixture that contains phosphine compound and naphtoquinone compounds of composition (E).
As phosphine compound, be preferable with three grades of phosphine compounds.The non-limiting example of phosphine compound also comprises: three grades of phosphine compounds of alkyl and/or aryl; For example three cyclohexyl phosphines, tributylphosphine, dibutyl Phenylphosphine, butyl diphenyl phosphine, ethyl diphenylphosphine, triphenylphosphine, three (4-aminomethyl phenyl) phosphine, three (4-ethylphenyl) phosphine, three (4-ethylphenyl) phosphine, three-(4-propyl group phenyl) phosphine, three (4-butyl phenyl) phosphine, three (isopropyl phenyl) phosphine, three (tert-butyl-phenyl) phosphine, three (2; 4-dimethylphenylphosphine), three (2; 6-aminomethyl phenyl) phosphine, three (2; 4; 6-trimethylphenyl) phosphine, three (2,6-dimethyl--4-ethoxyl phenenyl) phosphine, three (4-p-methoxy-phenyl) phosphine and three (4-ethoxyl phenenyl) phosphine.Wherein, the phosphine compound that is selected from triphenylphosphine, three p-methylphenyl phosphines and cohort that tributylphosphine becomes is for special good.
The limiting examples of naphtoquinone compounds comprises: adjacent benzoquinones, para benzoquinone, diphenol quinone, 1,4-naphthoquinones, and anthraquinone.Wherein, with regard to moisture resistance and storage stability, be preferable with para benzoquinone (1,4-benzoquinones).In addition, the affixture with three grades of phosphine compounds shown in the general formula (XX) and para benzoquinone is preferable.
Figure G2008101777498D00161
R in the formula (IA) is selected from Wasserstoffatoms, have the alkyl of 1 to 12 carbon atom and have the alkoxyl group of 1 to 12 carbon atom, and each R can be same to each other or different to each other.Above-mentioned alkyl or alkoxyl group can be through replacing.Above-mentioned each R preferably is independently selected from Wasserstoffatoms, have the alkyl of 1 to 4 carbon atom and have the alkyl oxygen of 1 to 4 carbon atom.With regard to release property, under this situation, m equals one or more alkyl or the alkoxyl groups of being preferably among 1, three R, and each R is more preferred from alkyl or alkoxyl group.More specifically, with regard to release property, the affixture of triphenylphosphine, three (4-aminomethyl phenyl) phosphine or tributylphosphine and para benzoquinone is for better.
With regard to storage stability, the preferable affixture that comprises cyclic amidine compounds and phenol resins of hardening accelerator (E), and be more especially phenol-novolac resin salt for better with the diazabicylo hendecene.
By the viewpoint of improvement release property and safety etc., following any hardening accelerator of resin combination inclusion is as composition (E).
(1) comprises the hardening accelerator of the affixture of phosphine compound shown in the above-mentioned general formula (IA) and naphtoquinone compounds;
(2) comprise the two hardening accelerator of phosphine compound shown in the above-mentioned general formula (IA) and naphtoquinone compounds;
(3) comprise the hardening accelerator that has with the affixture of the phosphine chemical combination of the phosphorus atom of at least one alkyl bond knot and naphtoquinone compounds;
(4) comprise and have and the two hardening accelerator of the phosphine compound of the phosphorus atom of at least one alkyl bond knot and naphtoquinone compounds;
For example, hardening accelerator can contain the affixture of phosphine compound shown in the general formula (IA) and naphtoquinone compounds and have with the phosphine compound of the phosphorus atom of at least one alkyl bond knot and affixture that quinone is breathed out the two.Hardening accelerator also can contain the phosphine compound shown in the general formula (IA), has the phosphine compound of the phosphorus atom of tying with at least one alkyl bond, reach naphtoquinone compounds.
In above-mentioned; Because the formed affixture of Intermolecular Forces effect is meant that the limiting examples of affixture comprises by addition phosphine compound and prepared compound of naphtoquinone compounds or complex compound: the addition reaction product, reach the compound of forming through intermolecular forces by two kinds of compounds that have different πDian Zi density each other.In above-mentioned (2) and (4), the mol ratio of phosphine compound and naphtoquinone compounds is preferable between 1/1 to 1/1.5.
As for phosphine compound, be preferable with the phosphine compound shown in the formula (IB) with phosphorus atom of tying with at least one alkyl bond.
Figure G2008101777498D00171
R in the general formula (IB) 1Be meant alkyl with 1 to 12 carbon atom, and R 2With R 3For Wasserstoffatoms or have the alkyl of 1 to 12 carbon atom, R 1, R 2And R 3Can be same to each other or different to each other.Abovementioned alkyl and alkyl can be through replacing.R 1, R 2And R 3Be preferably and independently be selected from alkyl with 1 to 12 carbon atom.With regard to preferable release property, R 1To R 3In one or more cyclohexyl, butyl or the octyl groups of being preferably.
The limiting examples of the phosphine compound shown in the general formula (IA) comprises: triphenylphosphine, phenylbenzene p-methylphenyl phosphine, phenylbenzene (p-methoxyphenyl) phosphine, di-p-tolyl Phenylphosphine, two (to methoxyl group) phenyl, three p-methylphenyl phosphines, tri-o-tolyl phosphine, three tolylphosphine, three (to ethylphenyl) phosphine, three (to n-butylphenyl) phosphine, three (p-methoxyphenyl) phosphine, three (o-methoxyphenyl) phosphines and three (m-methoxyphenyl) phosphines.Particularly; With regard to the hardening of excellence; Preferred embodiment comprises two (to the alkyl phenyl) phosphines of phenyl, two (palkoxy benzene base) phosphine, three (to the alkyl phenyl) phosphines of phenyl, three (adjacent alkyl phenyl) phosphine, three (alkyl phenyl) phosphine and three (palkoxy benzene base) phosphine; All phosphine compounds all have two or more electronation substituting groups; For example introduce to, or adjacent alkyl or alkoxyl group, for example two (p-methoxyphenyl) phosphines of phenyl di-p-tolyl phosphine, phenyl, three p-methylphenyl phosphines, tri-o-tolyl phosphine, three tolylphosphine, three (to ethylphenyl) phosphine, three (to n-butylphenyl) phosphines and ginseng (p-methoxyphenyl) phosphines.Phosphine compound shown in one or more general formulas (IA) can suitably be selected to use with the form of the adduct of naphtoquinone compounds or with naphtoquinone compounds blended form.With regard to mobile, be the best with the form of the affixture of naphtoquinone compounds.
The limiting examples of the phosphine compound shown in the general formula (IB) comprises: trialkyl phosphine, for example tributylphosphine, three cyclohexyl phosphines, and tri octyl phosphine; Dialkyl aryl phosphine, for example phenyl dibutyl phosphine, and phenyl two cyclohexyl phosphines; And alkyl diaryl phosphine, for example phenylbenzene butyl phosphine, and phenylbenzene cyclohexyl phosphine.In the above-claimed cpd, with regard to hardening, with trialkyl phosphine, for example tributylphosphine, three cyclohexyl phosphines, and tri octyl phosphine be preferable.With regard to anti-reflow property, with the dialkyl aryl phosphine, for example the phenylbenzene butyl phosphine, and phenylbenzene cyclohexyl phosphine be preferable.Phosphine compound shown in the general formula (IB) can use or make up use separately.The form of the affixture that can form with naphtoquinone compounds or use with naphtoquinone compounds.With regard to mobile, be preferable with affixture.
With the form of the affixture that forms with phosphine compound or be contained in naphtoquinone compounds in the resin combination with phosphine compound and enumerated benzoquinones, naphthoquinones, and anthraquinone.Wherein being preferable to quinones.Limiting examples to quinones comprises 1,4-benzoquinones, methyl-1,4-benzoquinones, methoxyl group-1,4-benzoquinones, the tertiary butyl-1,4-benzoquinones, phenyl-1; 4-benzoquinones, 2,3-dimethyl--1,4-benzoquinones, 2,5-dimethyl--1; 4-benzoquinones, 2,3-dimethoxy-1,4-benzoquinones, 2,5-dimethoxy-1; 4-benzoquinones, 2,5-di-t-butyl-1,4-naphthoquinones, and 9,10-anthraquinone.Wherein, just have with regard to the preferable reactivity with phosphine compound, with 1,4-benzoquinones and methyl para benzoquinone for better.As for naphtoquinone compounds, can suitably select one or more naphtoquinone compounds to use.
With regard to the affixture of phosphine compound shown in the general formula (IA) and naphtoquinone compounds; Though it is not had particular restriction; But with regard to hardening, with naphtoquinone compounds with comprise that the formed affixture of two or more phosphine compounds with the substituent aryl of electronation is preferable.The limiting examples of affixture comprises affixture, three (p-methoxyphenyl) phosphine of three (p-methoxyphenyl) phosphines and 1,4-benzoquinones and affixture, three (p-methoxyphenyl) phosphine and the tertiary butyl-1 of methyl-1,4-benzoquinones; The affixture of 4-benzoquinones, three p-methylphenyl phosphines and 1; Affixture, the tri-o-tolyl phosphine and 1 of the affixture of the affixture of 4-benzoquinones, three p-methylphenyl phosphines and methyl-1,4-benzoquinones, three p-methylphenyl phosphines and the tertiary butyl-1,4-benzoquinones; The affixture of 4-benzoquinones, tri-o-tolyl phosphine and methyl-1; The affixture of the affixture of the affixture of 4-benzoquinones, tri-o-tolyl phosphine and the tertiary butyl-1,4-benzoquinones, three tolylphosphine and 1,4-benzoquinones, three tolylphosphine and methyl-1; The affixture of 4-benzoquinones, three tolylphosphine and the tertiary butyl-1; The reaction product of the reaction product of the affixture of 4-benzoquinones, two (p-methoxyphenyl) Phenylphosphine and 1,4-benzoquinones, two (p-methoxyphenyl) Phenylphosphine and methyl-1,4-benzoquinones, two (p-methoxyphenyl) Phenylphosphine and the tertiary butyl-1; The reaction product of 4-benzoquinones, di-p-tolyl Phenylphosphine and 1; The reaction product of the reaction product of the reaction product of 4-benzoquinones, di-p-tolyl Phenylphosphine and methyl-1,4-benzoquinones and di-p-tolyl Phenylphosphine and the tertiary butyl-1,4-benzoquinones.
With regard to anti-reflow property, to comprise that the phosphine compound with the substituent aryl of electronation and the affixture of naphtoquinone compounds below two are preferable.The limiting examples of affixture comprises phenylbenzene (p-methoxyphenyl) phosphine and 1; Affixture, the phenylbenzene p-methylphenyl phosphine and 1 of the affixture of the affixture of 4-benzoquinones, phenylbenzene (p-methoxyphenyl) phosphine and methyl-1,4-benzoquinones, phenylbenzene (p-methoxyphenyl) phosphine and the tertiary butyl-1,4-benzoquinones; The affixture of 4-benzoquinones, phenylbenzene p-methylphenyl phosphine and methyl-1; Affixture, triphenylphosphine and the methyl-1 of affixture, triphenylphosphine and 1, the 4-benzoquinones of the affixture of 4-benzoquinones, phenylbenzene p-methylphenyl phosphine and the tertiary butyl-1,4-benzoquinones; The affixture of the affixture of 4-benzoquinones and triphenylphosphine and the tertiary butyl-1,4-benzoquinones.
As for the phosphine compound shown in the general formula (IB) and the affixture of naphtoquinone compounds,, with regard to hardening, be preferable with following compound though it is not had particular restriction.Limiting examples comprises the affixture of trialkyl phosphine and naphtoquinone compounds, for example the affixture of three cyclohexyl phosphines and 1,4-benzoquinones, three cyclohexyl phosphines and methyl-1; The affixture of 4-benzene Kun, three cyclohexyl phosphines and the tertiary butyl-1; The affixture of the affixture of the affixture of 4-benzoquinones, tributylphosphine and 1,4-benzoquinones, tributylphosphine and methyl-1,4-benzoquinones, tributylphosphine and the tertiary butyl-1; The affixture of 4-benzoquinones, tri octyl phosphine and 1; The affixture of the affixture of the affixture of 4-benzoquinones, tri octyl phosphine and methyl-1,4-benzoquinones and tri octyl phosphine and the tertiary butyl-1,4-benzoquinones.
With regard to anti-reflow property, with alkyl diaryl phosphine or and the affixture of alkylaryl phosphine and naphtoquinone compounds is preferable.The limiting examples of above-mentioned affixture comprises affixture, cyclohexyl diphenylphosphine and the tertiary butyl-1 of affixture, cyclohexyl diphenylphosphine and methyl-1, the 4-benzoquinones of cyclohexyl diphenylphosphine and 1,4-benzoquinones; The affixture of the affixture of the affixture of 4-benzoquinones, butyl diphenyl phosphine and 1,4-benzoquinones, butyl diphenyl phosphine and methyl-1,4-benzoquinones, butyl diphenyl phosphine and the tertiary butyl-1; The affixture of 4-benzoquinones, two cyclohexyl phenyl phosphines and 1; Affixture, the dibutyl Phenylphosphine and 1 of the affixture of the affixture of 4-benzoquinones, two cyclohexyl phenyl phosphines and methyl-1,4-benzoquinones, two cyclohexyl phenyl phosphines and the tertiary butyl-1,4-benzoquinones; The affixture of 4-benzoquinones, dibutyl Phenylphosphine and methyl-1; 4, the affixture of the affixture of-benzoquinones, dibutyl Phenylphosphine and the tertiary butyl-1,4-benzoquinones.In the above-mentioned affixture, with the affixture of alkyl diphenyl phosphine and 1,40 benzoquinones; Cyclohexyl diphenylphosphine and 1 for example; The affixture of the affixture of the affixture of 4-benzoquinones, butyl diphenyl phosphine and 1,4-benzoquinones and octyl group and Phenylphosphine and 1,4-benzoquinones is for better.
More specifically, be listed below as the compound shown in the following formula (XV) of the affixture of phosphine compound and naphtoquinone compounds:
(in the formula (XV), R, R ', R ", R " ' and R 1To R 3Be the alkyl that is selected from Wasserstoffatoms and has 1 to 18 carbon atom, R, R ', R ", R " ' and R 1To R 3Can respectively be same to each other or different to each other.R 2And R 3Can form ring structure via linking each other.)
Capable of using 1H-NMR reaches 31P-NMR identifies the affixture of following formula institute formula and can not have any problem. 31Among P-NMR, belong to phosphine compound 31The peak of P is shifted to downfield, and this shows that promptly phosphorus atom has become positively charged ion.Just 1H-NMR is derived by quinone 1H become hydroxyl can by 1The disappearance of H and be able to the proof.In addition, can be observed 1H reaches 31Coupling between P.According to these facts, can confirm the formation of the adduct of naphtoquinone compounds and phosphine.
The phosphine compound shown in the mutual-through type (XX) and the affixture of naphtoquinone compounds, and the method for manufacture that comprises with the affixture of the phosphine compound of the phosphorus atom of at least one alkyl bond knot and naphtoquinone compounds does not have particular restriction.For example; A kind of method is included in the raw material of solubilized phosphine compound and naphtoquinone compounds, and phosphine compound and naphtoquinone compounds carry out addition reaction, another method and be included in and make phosphine compound and naphtoquinone compounds carry out addition reaction in mentioned component (B) solidifying agent in the organic solvent that then can product be separated.In one method of back, can use being dissolved in the product in the solidifying agent and need not to separate of being obtained, with composition as resin combination.
As phosphine compound and the naphtoquinone compounds shown in the general formula (IA), above-mentioned each affixture can use separately or two kinds or more kinds of above-mentioned affixture combination are used.As for the phosphine compound that comprises the phosphine atom of tying with at least one alkyl bond and the affixture of naphtoquinone compounds, above-mentioned each affixture can use separately or two kinds or more kinds of above-mentioned affixture combination uses.In addition, as stated, the affixture of phosphine compound shown in one or more the general formula (IA) and naphtoquinone compounds and one or more the phosphine compound that comprises the phosphorus atom of tying with at least one alkyl bond and the affixture use also capable of being combined of naphtoquinone compounds.
If need, can further comprise phosphorus compound for example, tertiary amine compound, and the hardening accelerator of imidazolium compounds, and with above-mentioned hardening accelerator (1) to (4) in any one combination use, and as composition (E).Under this situation, in the total amount of hardening accelerator, the preferable 95 weight % that are less than or equal to of the combined amount of this hardening accelerator.
In the 3rd preferred embodiments, have straight chain type oxidic polyethylene more than or equal to 4,000 weight-average molecular weight, as composition (F), and, comprise ester cpds as composition (G).Ester cpds is that the esterification through the copolymerization product obtains, and it is by α-alkene and MALEIC ANHYDRIDE with 5 to 30 carbon atoms, and is made with the monovalent alcohol with 5 to 25 carbon atoms.It is as releasing agent that mentioned component (F) reaches (G).The straight chain type oxidic polyethylene of composition (G) and composition (F) and composition (A) but epoxy resin have the height compatibility, therefore, composition (G) can prevent on mould and packaged piece, to form dirt and reduce tackyness effectively.
Here, the carbonatoms that the straight chain type Vilaterm is defined as its side chain is approximately 10% Vilaterm of the carbonatoms that is less than or equal to its main chain, and in classification, belong to usually demonstrate less than or etc. the Vilaterm of 2 penetration coefficient.Again, oxidic polyethylene is defined as the Vilaterm with acid number.
By the viewpoint of release property, the weight-average molecular weight of composition (F) is more than or equal to 4,000, by tackyness and prevent the viewpoint of dirt in mould and the encapsulation; Be preferably and be less than or equal to 30,000, be more preferred from 5,000 to 20; 000, be more preferred from 7,000 to 15,000.The weight-average molecular weight here is meant uses the measured value of high temperature GPC (gel permeation chromatography art).The acid number of composition (F) does not have special restriction, but by the viewpoint of release property, is preferably 2 to 50mg/KOH, is more preferred from 10 to 35mg/KOH.
Though consumption with respect to epoxy resin (A); The blended consumption of composition (F) does not have special restriction; But by the viewpoint of release property, be preferably, by the improvement tackyness and avoid the viewpoint of dirt in mould and the encapsulation more than or equal to 0.5wt%; Be preferably the consumption that is less than or equal to 10wt%, be more preferred from 1 to 5wt%.
α-the alkene with 5 to 30 carbon atoms that is used in the mentioned component (G) does not have special restriction; Its limiting examples comprises straight chain type-α-alkene, like 1-amylene, 1-hexene, 1-heptene, 1-octene, 1-nonene, 1-decene, 1-undecylene, 1-dodecylene, 1-tridecylene, 1-tetradecene, 1-ten five carbenes, 1-cetene, 1-heptadecene, 1-vaccenic acid, 1-ten nine carbenes, 1-eicosylene, 1-two dodecylenes, 1-tricosene, 1-tetracosene, 1-ppentacosene, 1-cerotene, and 1-cerotene; And branched chain type α-alkene; Like 3-methyl-1-butylene, 3,4-dimethyl pentene, 3-methyl-1-nonene, 3,4-dimethyl--1-octene, 3-ethyl-1-dodecylene, 4-methyl-5-ethyl-1-vaccenic acid, and 3; 4,5-triethyl-1-eicosylene.It can separately or merge use.In above-mentioned, be preferably straight chain type α-alkene, be more preferred from straight chain type α-alkene, like 1-eicosylene, 1-two dodecylenes and 1-tricosene with 15 to 25 carbon atoms with 10 to 25 carbon atoms.
The monovalent alcohol with 5 to 25 carbon atoms that is used for composition (G) does not have special restriction.Its limiting examples comprises straight key or an of bonding aliphatic saturated alcohols such as amylalcohol, primary isoamyl alcohol, hexanol, enanthol, octanol, nonyl alcohol, decyl alcohol, hendecanol, lauryl alcohol, tridecyl alcohol, tetradecanol, pentadecylic alcohol, cetyl alcohol, heptadecanol, Stearyl alcohol, nonadecanol, reaches EICOSANOL; Straight or branched type aliphatics unsaturated alcohol such as hexenol, 2-hexene-1-alcohol, 1-hexene-3-alcohol, amylalcohol, and 2-methyl-1-amylalcohol; Alicyclic alcohol such as cyclopentanol, and hexalin; Aromatic alcohols such as phenylcarbinol, and styryl carbinol; And heterocyclic alcohol such as furfuryl alcohol.It can separately or merge use.In above-mentioned, be preferably straight chain type alcohol, be more preferred from straight chain type aliphatic saturated alcohols with 15 to 20 carbon atoms with 10 to 20 carbon atoms.
The α with 5 to 30 carbon atoms-rare hydrocarbon in the composition (G) and the copolymerization product between MALEIC ANHYDRIDE do not have special restriction.That limiting examples comprises is following-as the compound shown in the formula (XVI), and following-as the compound shown in the formula (XVII).Can adopt the commercially available prod of Nissan ElectorWPB-1 by name (ProductName that NOF company produces), its raw material is 1-eicosylene, 1-two dodecylenes and 1-tricosene.
Figure G2008101777498D00231
(these formulas (XVI) and (XVII) in, R is selected from the unit price aliphatic alkyl with 3 to 28 carbon atoms, n be the integer more than or equal to 1, reaching m is positive.)
Above-mentioned general expression (XVI) and (XVII) in alphabetical m be expression and the mole number of the α-alkene of every mole MALEIC ANHYDRIDE copolymerization.Though do not have specific limited on it, m is preferably 0.5 to 10, is more preferred from 0.9 to 1.1.
Do not have for the method for manufacture of the copolymerization product of composition (G) specific limited be set, can use-as polymerization method.In reaction, can use the organic solvent that can dissolve α-alkene and MALEIC ANHYDRIDE.Though do not have specific limited for solvent, be preferably toluene, also can use the serial solvent of other solvent such as alcohol, ether series solvent, reach amine series solvent.Temperature of reaction becomes though look employed solvent, by the viewpoint of reactivity and productivity.Preferablely be set in 50 to 200 ℃, be more preferred from 80 to 120 ℃.Reaction times can not obtain the copolymerization product as long as it has special restriction, and by the viewpoint of productivity, is preferably 1 to 30 hour, is more preferred from 2 to 15 hours, is more preferred from 4 to 10 hours again.After reaction is accomplished,, can under the condition that for example heats and reduce pressure, remove unreacted material or solvent if needs are arranged.As for its condition, temperature is preferably 100 to 220 ℃, is more preferred from 120 to 180 ℃, and pressure is preferably and is less than or equal to 13.3 * 10 3Pa is more preferred from and is less than or equal to 8 * 10 3Pa, the time is preferably 0.5 to 10 hour.Can add catalysts such as amine catalyst series or acid catalyst etc. when needing in addition.The pH value of reactive system is preferable to remain on about 1 to 10.
The esterification process of above-mentioned copolymerization product that has the monovalent alcohol of 5 to 25 carbon atoms as for use does not have specific limited, can use the addition reaction of general method such as copolymerization product and monovalent alcohol.The molar ratio of the reaction between copolymerization product and monovalent alcohol does not have specific limited, and can at random set.Because the wetting ability of product can be controlled through the molar ratio of adjustment reaction, so the preferable characteristic according to the target epoxy resin composition for packaging of molar ratio is suitably set.The organic solvent of solubilized copolymerization product etc. can be used in this reaction.As for organic solvent, though not restriction is preferably toluene.Also can use pure serial solvent, ether series solvent, amine series solvent etc.Temperature of reaction though become according to the kind of employed organic solvent, by the viewpoint of reactivity and productivity, is preferably 50 to 200 ℃, is more preferred from 80 to 120 ℃.Reaction times though there is not the specific limited of setting, by the viewpoint of productivity, is preferably 1 to 30 hour, is more preferred from 2 to 15 hours, is more preferred from 4 to 10 hours again.After reaction is accomplished,, can remove unreacted matters, solvent etc. under heating and the reduced pressure for example if needs are arranged.As for reaction conditions, temperature is preferably 100 to 220 ℃, is more preferred from 120 to 180 ℃, and pressure is preferably and is less than or equal to 13.3 * 10 3Pa is more preferred from and is less than or equal to 8 * 10 3Pa, preferable being set in 0.5 to 10 hour of time.Can add catalysts such as amine catalyst series or acid catalyst etc. when needing.The pH value of reactive system is preferable to remain on about 1 to 10.
As for through as above-mentioned by the made copolymerization product of α-alkene and maleic two calculation acid anhydrides and the compound that esterification obtained of monovalent alcohol; For example, but example on it constitutes, have be selected from by following formula (a) or diester (b) and following formula (c) to (f) shown in the compound of one or more repeating units of cohort that monoesters is formed.This compound can contain formula (g) or (h) shown in non-ester class.The limiting examples of this compound comprises:
(1) have the compound of single kind of main chain backbone of the formula of being selected from (a) to (f),
(2) have randomly, contain the compound of the formula of being selected from (a) to (f) periodically or with the form of block more than or equal to 2 kinds of main chain backbones, and
(3) have randomly, periodically or contain a kind of or more than or equal to the compound of 2 kinds of formulas (a) to (f) and at least a formula (g) and main chain backbone (h) with the form of block.Those compounds can separately or merge use.
Any one or both that can comprise in addition, (4) and (5); (4) have randomly, contain the compound of formula (g) and main chain backbone (h) periodically or with the form of block; And (5) have the compound of formula (g) or single kind of major key skeleton (h).
Figure G2008101777498D00251
(following formula (a) in (h), R 1For having the unit price aliphatic alkyl of 3 to 28 carbon atoms, R 2For having the univalence hydrocarbyl of 5 to 25 carbon atoms, reaching m is positive integer.)
Alphabetical m in the formula (a) to (h) is meant the mole quantity of units with the α-alkene of one mole of MALEIC ANHYDRIDE copolymerization.Though m is not had specific limited, the scope of m is preferably 0.5 to 10, is more preferred from 0.9 to 1.1.
The combination of visual and composition (F) and the mono-esterification ratio of selection component (G) compatibly.Yet by the viewpoint of release property, its ratio is preferably more than or equal to 20%.As for composition (G), preferable use contains the 20mol% more than or equal to the summation amount of one or more monoesters shown in the formula (c) to (f), is more preferred from more than or equal to 30mol%.
Again, by the viewpoint that prevents in mould and encapsulation, to form dirt and mouldability, the weight-average molecular weight of composition (G) is preferably 5,000 to 100,000, is more preferred from 10,000 to 70,000, is more preferred from 15,000 to 50,000 again.Tend to be not enough to prevent the dirt in mould and the encapsulation less than 5,00 weight-average molecular weight, but then, be higher than 100,000 weight-average molecular weight and tend to make the character deterioration of mixing than high softening-point owing to compound.Here, weight-average molecular weight is meant the measured value through GPC.
Though with respect to epoxy resin (A) consumption, the mixing consumption of composition (G) does not have special restriction, by the viewpoint of release property; Consumption is preferably more than or equal to 0.5wt%; By the viewpoint of anti-reflow property, consumption is preferably and is less than or equal to 10wt%, is more preferred from 1 to 5wt%.
When preparation during composition epoxy resin, by the viewpoint of the dirt in anti-reflow property and mould and the encapsulation, composition (F) and (G) any preferable and part or all of composition (A) epoxy at least of (both are all releasing agent) set and can be pre-mixed.When composition (F) and (G) at least one and composition (A) when being pre-mixed, can improve the dispersiveness in base resin, the result is pre-mixed the dirt that can effectively prevent in anti-reflow property reduction and mould and the encapsulation.
The method of being pre-mixed does not have special restriction, and can use any method as long as composition (F) and (G) at least one are scattered in the composition (A).For example, be preferably the method that under the temperature of room temperature to 220 ℃, stirred 0.5 to 20 hour.By the viewpoint of dispersiveness and productivity, temperature is preferably 100 to 200 ℃, is more preferred from 150 to 170 ℃, and churning time is preferably 1 to 10 hour, is more preferred from 3 to 6 hours.
Desiring to give the composition (F) that is pre-mixed and (G) at least one can be pre-mixed with the whole composition (A) or the composition (A) of part.Even be pre-mixed also enough effects can be provided with the composition (A) of part.Under this situation, the consumption of desiring to give the composition (A) that is pre-mixed be preferably with respect to composition (A) total amount 10 to 50wt%.
Moreover, though can obtain improveing dispersed effect with composition (A),, be more preferred from and be pre-mixed composition (F) and reach (G) both and composition (A) for better effect through being pre-mixed composition (F) and (G) any one.The interpolation order of three kinds of compositions does not have specific limited when being pre-mixed, and can use the three to add simultaneously and mixes and added ingredients (F) and one mixing with composition (A) (G), then adds all the other compositions mixing.
In the 4th preferred embodiments,, add the compound (H) that contains phosphorus atom in addition in order to improve flame retardant resistance.As for composition (H), preferable use is selected from by red phosphorus, SULPHOSUCCINIC ACID ESTER and contains phosphorus and nitrogen compound (compound that wherein has phosphorus-nitrogen key) is formed one or more compounds of cohort.
When using red phosphorus, one of simple base material and surface applying organic or inorganic compound person and all can use.Any currently known methods optionally capable of using is coated on the surface with red phosphorus, and upward and also the order to coating is also unrestricted.In the coating program, can use two kinds or more kinds of metal hydroxides, complex metal hydroxide, MOX and thermosetting resins simultaneously.Manufacturing is following through the limiting examples of the red phosphorus of coating.The aqueous solution of water-soluble metal-salt is added in the aqueous suspension that contains red phosphorus; Metal hydroxides is absorbed on the red phosphorus and separates then, is coated on the red phosphorus surface via the replacement(metathesis)reaction of metal-salt and sodium hydroxid or Pottasium Hydroxide or bicarbonate of ammonia.Perhaps; Further with the red phosphorus heating that is coated with metal hydroxides of above-mentioned acquisition and convert metal hydroxides to MOX; The red phosphorus resuspending that is coated with MOX that will obtain then is in water, and then the particle nationality of the red phosphorus of warp coating carries out polymerization by the monomer that makes thermosetting resin and thermosetting resin is applied on it on these particulate surfaces.
The limiting examples of thermosetting resin comprises: known epoxy resin, urethane resin, cyanate resin, phenol resins, polyimide resin, melamine resin, urea-formaldehyde resin, furane resin, aniline formaldehyde resin, polyamide resin and polyamide-imide resin.Also can use the monomer or the oligomerization compound of above-mentioned resin, when using monomer or oligomerization compound, polyreaction and coating take place simultaneously, and form above-mentioned thermosetting resin as coating.The combined amount of red phosphorus is preferable in the scope of 0.5 to 30 weight % with respect to the epoxy resin total amount.
With regard to mobile, preferable use SULPHOSUCCINIC ACID ESTER is as composition (H).Because SULPHOSUCCINIC ACID ESTER is as fluidizer and fire retardant, use SULPHOSUCCINIC ACID ESTER can reduce the combined amount of composition (C).
SULPHOSUCCINIC ACID ESTER is by phosphoric acid and alcohol compound or the prepared ester cpds of phenolic cpd, and it is not had particular restriction.The limiting examples of SULPHOSUCCINIC ACID ESTER comprises trimethyl phosphite 99, triethyl phosphate, triphenylphosphate, Tritolyl Phosphate, tricresyl phosphate (YLENE) ester, phosphate toluene diphenyl ester, phosphoric acid (YLENE) diphenyl ester, tricresyl phosphate (2,6-xylyl) ester and aromatics condensed phosphoric acid esters.Particularly, with regard to hydrolytic resistance, be preferable with the aromatics condensed phosphoric acid esters shown in the formula (XVIII).
Figure G2008101777498D00271
(in the formula (XVIII), R representes to have the alkyl of 1 to 4 carbon atom, and it all can be same to each other or different to each other, and Ar representes the aromatic series base.)
As the described SULPHOSUCCINIC ACID ESTER of above-mentioned general expression (XVIII), but the described SULPHOSUCCINIC ACID ESTER of example following structural formula (XIX).
Figure G2008101777498D00281
Viewpoint by the flame retardant resistance effect; With respect to the amount of the phosphorus atom in the total amount of getting rid of all the components beyond the weighting agent, the consumption of the SULPHOSUCCINIC ACID ESTER of interpolation is preferably more than or equal to 0.2wt%, and by mouldability; The viewpoint of moisture resistance and outward appearance is preferably and is less than or equal to 3.0wt%.If consumption surpasses 3.0wt%.Then SULPHOSUCCINIC ACID ESTER possibly ooze out when moulding sometimes, undermines outward appearance.Especially; As the resin combination of stating second aspect after the foundation; Slim when being applied to, when state's pin count, the semiconducter device of long side traverse and narrow weld pad spacing type; The SULPHOSUCCINIC ACID ESTER addition is preferably more than or equal to 0.2 weight %, to avoid by reducing the mobile moulding defective that is caused of disk (for example lead skew and hole).
As for phosphorous and nitrogen compound, can enumerate the ring phosphorus nitrence compound that is disclosed in the open case of japanese unexamined patent the flat 8 (1996)-No. 225714.Specific instance is included in the ring-type phosphorus nitrence compound that has following formula (XXa) and/or repeating unit (XXb) in the skeleton main chain; And have following formula (XXc) and/or (XXd) shown in ring-type phosphorus nitrence compound, in the repeating unit that it contains, be substituted at different positions phosphorus nitrence ring with respect to phosphorus atom.
Figure G2008101777498D00291
Here, during formula (Xxa) reached (XXc), m was 1 to 10 integer, R 1To R 4Be to be selected from through replacing or without substituted aryl and have the alkyl of 1 to 12 carbon atom.R 1To R 4All can be same to each other or different to each other, but its at least one have hydroxyl.Letter A is meant alkylene base or the arylene base with 1 to 4 carbon atom.During formula (XXb) reached (XXd), alphabetical n was 1 to 10 integer, R 5To R 8Be to be selected from through replacement or without substituted alkyl and aryl, R with 1 to 12 carbon atom 5To R 8All can be same to each other or different to each other, and alphabetical A is meant alkylene base or the arylene base with 1 to 4 carbon atom.In addition, the R in m repeating unit 1, R 2, R 3And R 4Can be identical from one another or different, and the R in n repeating unit 5, R 6, R 7And R 8Can be identical from one another or different.
Formula (Xxa) in (XXd), R 1To R 8Shown have 1 to 12 carbon atom through replacing or comprising alkyl such as methyl, ethyl, propyl group, sec.-propyl, butyl, isobutyl-, sec.-butyl, and the tertiary butyl without the limiting examples of substituted alkyl or aryl; Aryl such as phenyl, 1-naphthyl, and 2-naphthyl; Through the substituted aryl of alkyl such as o-tolyl, a tolyl, p-methylphenyl, 2,3-xylyl, 2,4-xylyl, adjacent cumenyl, a cumenyl, to cumenyl, and trimethylphenyl; And through the substituted alkyl of aryl such as phenmethyl, and styroyl.With regard to the substituting group that can further replace above-mentioned listed group, but example goes out alkyl, alkoxyl group, aryl, hydroxyl, amino, epoxy group(ing), vinyl, hydroxyalkyl, reaches alkylamino.
In above-mentioned, with regard to the thermotolerance and moisture resistance of resin combination, be preferable with aryl, and with phenyl and phenylor for better.Particularly, R 1To R 4In at least one be preferably phenylor, and be more preferred from R 1To R 4In any one be phenylor.R 1To R 8All can be phenylor, but the resin combination after solidifying possibly become easy crisp.If R 1To R 8Be all phenyl, the thermotolerance step-down of curable resin composition, this is because this compound is not incorporated in the crosslinking structure of epoxy resin.
The limiting examples with 1 to 4 carbon atom alkylene base and arylene base shown in the A in the above-mentioned formula (XXa) to (XXd) comprises methylene base, ethylene group, trimethylene base, different trimethylene base, the fourth support is basic, isobutyl supports base, penylene base, the toluene support is basic, the toluene support is basic, reach the naphthylene base.By the thermotolerance of resin combination and the viewpoint of moisture resistance, be preferably the arylene base, be more preferred from the penylene base.
Ring-type phosphorus nitrence compound is any one a polymkeric substance of following formula (Xxa) to (XXd), formula (Xxa) and (XXb) multipolymer or formula (XXc) and (XXd) multipolymer.Multipolymer can be random copolymers, segmented copolymer or alternating copolymer.Though the molar ratio m/n of multipolymer does not have the restriction of setting, through the thermotolerance of solidified resin combination and the viewpoint of intensity, be preferably 1/0 to 1/4 by improvement, be more preferred from 1/0 to 1/1.5.Polymerization degree m+n is preferably 1 to 20, is more preferred from 2 to 8, is more preferred from 3 to 6 again.
The preferred embodiments of ring-type phosphorus nitrence compound comprises the multipolymer shown in polymkeric substance shown in the following formula (XXI) and the following formula (XXII).
Figure G2008101777498D00301
Figure G2008101777498D00311
In the formula (XXI), m is 0 to 9 integer, R 1To R 4Be to be selected from Wasserstoffatoms and hydroxyl separately.In the formula (XXII), alphabetical m and n are 0 to 9 integer, R 1To R 4Be to be selected from Wasserstoffatoms and hydroxyl separately, and its at least one be hydroxyl.R 5To R 8Be to be selected from Wasserstoffatoms and hydroxyl separately.Again, the ring-type phosphorus nitrence compound shown in the formula (XXII) can be alternately, block ground or randomly contain the compound as shown in the formula another repeating unit (b) of m the repeating unit (a) shown in (XXII) and n.In above-mentioned, be preferably and randomly contain two kinds of unitary compounds.
In the above-mentioned listed compound, preferable compound is for having the R in its Chinese style (XXI) 1To R 4Any one for hydroxyl and m be 3 to 6 polymkeric substance as staple, and have its Chinese style (R among the XXII_ 1To R 4Any one be hydroxyl, R 5To R 8All be hydrogen or R 5To R 8One be hydroxyl, m/n be 1/2 to 1/3 and m+n be 3 to 6 multipolymer compound as staple.As for commercially available phosphorus nitrence compound, can adopt SPE-100 (ProductName that Ots uka chemical company produces).
In the 5th preferred embodiments,, in resin combination, has the amino silane coupling agent of secondary in the mixed molecules by the viewpoint of flowability and release property.Especially, be more preferred from the aminosilane coupling agent shown in the following general expression (II).
Figure G2008101777498D00321
In the formula (II), R 1Be to be selected from Wasserstoffatoms, to have the alkyl of 1 to 6 carbon atom and to have the cohort that alkoxyl group becomes of 1 or 2 carbon atom, R 2Be to be selected from alkyl and the phenyl with 1 to 6 carbon atom, R 3Represent methylidene or ethyl, and n is 1 to 6 integer, m is 1 to 3 integer.
The limiting examples of the aminosilane coupling agent shown in the above-mentioned general formula (II) comprises: γ-anilino propyl trimethoxy silicane; γ-anilino propyl-triethoxysilicane; γ-anilino propyl group methyl dimethoxysilane; γ-anilino propyl group methyldiethoxysilane; γ-anilino propyl group ethyl diethoxy silane; γ-anilino propyl group ethyl dimethoxy silane; γ-anilino methyltrimethoxy silane; γ-anilino Union carbide A-162; γ-anilino methyl dimethoxy silane; γ-anilino methyl diethoxy silane; γ-anilino methylethyl diethoxy silane; γ-anilino methylethyl dimethoxy silane; N-(p-methoxyphenyl)-γ-TSL 8330; N-(p-methoxyphenyl)-γ-aminopropyltriethoxywerene werene; N-(p-methoxyphenyl)-γ-aminopropyl methyl dimethoxysilane; N-(p-methoxyphenyl)-γ-aminopropyl methyldiethoxysilane; N-(p-methoxyphenyl)-γ-aminopropyl ethyl diethoxy silane; And N-(p-methoxyphenyl)-γ-aminopropyl ethyl dimethoxy silane.To use γ-TSL 8330 serves as special good.
The limiting examples of the composition (J) beyond the aminosilane coupling agent shown in the above-mentioned general formula (II) comprises: γ-(N-methyl) TSL 8330; γ-(N-ethyl) TSL 8330; γ-(N-butyl) TSL 8330; γ-(N-phenmethyl) TSL 8330; γ-(N-methyl) aminopropyltriethoxywerene werene; γ-(N-ethyl) aminopropyltriethoxywerene werene; γ-(N-butyl) aminopropyltriethoxywerene werene; γ-(N-phenmethyl) aminopropyltriethoxywerene werene; γ-(N-methyl) aminopropyl methyl dimethoxysilane; γ-(N-ethyl) aminopropyl methyl dimethoxysilane; γ-(N-butyl) aminopropyl methyl dimethoxysilane; γ-(N-phenmethyl) aminopropyl methyl dimethoxysilane; N-β-(amino-ethyl)-γ-TSL 8330; γ-(β-amino-ethyl) TSL 8330; And N-β-(N-vinyl benzene methylamino-ethyl)-γ-TSL 8330.
When being mixed in composition (J) in the resin combination, can promote neccessary composition and optionally composition (for example filler) between tackyness, the result can suitably represent neccessary composition and the optionally function and the effect of composition.Particularly optionally in the composition, with regard to the function and effect that suitably represent composition (D), preferable composition (J) and (D) combination are used.
With regard to mouldability and to regard to the tackyness of lead frame, the combined amount of composition (J) is in the total amount of resin combination, preferable scope at 0.037 to 4.75 weight %, and be more preferably under the scope of 0.088 to 2.3 weight %.Under the situation of added ingredients (D) mineral filler, with regard to mouldability and to regard to the tackyness of lead frame, the combined amount of composition (J) is in the consumption of mineral filler, preferable scope at 0.05 to 5 weight %, and be more preferably under the scope of 0.1 to 2.5 weight %.Under the situation of the coupler that except that above-mentioned coupler, also uses other kinds, the combined amount of composition (J) is preferably more than or equal to 30 weight % in the total amount of coupler, and is more preferred from more than or equal to 50 weight %, to show the usefulness of coupler.
The various combination of the knockout press composition capable of using under shearing and control its blended consumption and adjust; For example; Use the complex metal hydroxide of composition (C), use another kind of non-halogenated and non-antimony fire retardant such as composition (H) the compound that contains phosphorus atom and reduce the consumption of composition (C), use releasing agent; Use to increase the releasing agent of consumption, particularly use simultaneously composition (F) with (G) etc.
In the 6th preferred embodiments; Resin combination be make from every 10ml water contain 1g by the mixture of the crushing sheet of the moulded work of resin combination system in extraction extraction water that ion obtained have 0 to 3ppm Na ion concentration; 0 to 3ppm chlorine ion concentration; The specific conductance that is less than or equal to 100 μ S/cm, and the resin combination of 5.0 to 9.0 pH value.
Pondered deeply various uses so far and reached not improving one's methods of stibiated fire retardant without halogenation.Yet use indivedual compositions not bright so far with the standard that obtains required moisture resistance, for example, when applying the red phosphorus surface with resin or mineral compound, the standard of coating material and coat-thickness; When red phosphorus uses with phosphate compound and phosphorus nitrence compound, the standard of ion capturing agent consumption; And when using red phosphorus, the standard of the combined amount of metal hydroxide combustion inhibitor.Since this, only if use actual resin combination to carry out and need for example hundreds of long reliabilitys assess to thousands of hours, otherwise can not the assessment moisture resistance.Therefore, the problem in the assessment can hinder the development of product.Therefore, but the 6th preferred embodiments can provide the assessment moisture resistance row index.
Among this paper, it is following to obtain extraction water solution.To crush by the moulded work of resin combination system, and the sheet of will crushing is inserted in the water with the amount that every 10ml water contains the crushing sheet of 1g.Under 121 ℃ and 2 atmospheric conditions, carry out the water extraction then, arrive saturation value until the ionic concn that is extracted with extraction ion in the sheet of crushing certainly.So, make extraction water.As for crushing method, any well-known methods such as ball mill capable of using, satellite-type shredder (satellite mill), knife mill/burrstone mill and autogenous mill.In above-mentioned, because the pollution level of foreign matter in this extraction water operated and can reduce easily by ball mill and satellite-type shredder, so ball mill and satellite-type shredder are preferable.With regard to the crushing sheet, in order to keep fixed extraction condition for validity, preferable use screen cloth removes the particle that diameter surpasses certain value.
Though can use any well-known method, importantly sample or water can not shed and incur loss during the extraction.It can use any container, as long as can bear 121 ℃ and 2 atmospheric conditions.Being preferably container is pressure tank formula and inner with the nonreactant lining, and this is because can reduce to the contaminating impurity degree from container minimum.With regard to the lining that meets above-mentioned condition, for example use the processing procedure of fluorocarbon resin.
Extraction ionic amount can increase along with the extraction time, but gathering way of extraction quantity can little by little reduce.Behind certain hour, extraction quantity can not increase again.This kind state may be defined as saturation capacity.The amount of reaching capacity required time then has the difference on some degree according to the crushing particle size of deceiving, that is the content of radius larger particles is many more, and then the amount of reaching capacity required time is long more.As for the sample that uses 100 mesh screen clothes to be told, extraction concentration i.e. amount of reaching capacity in 12 hours.
Need to use high-purity water to extract.Because the extraction ionic concn is tens of to hundreds of ppm, the purity of water must be at least and make cl ions (Cl -), sodium ion (Na +), positive phosphorus acid ion (PO 4 3-), orthophosphite ions (HPO 3 2-), and hypophosphite ion (H 2PO 2-) in 10-1ppm or littler magnitude, and specific conductance is in several μ S/cm or littler magnitude.As for the preparation method of above-mentioned pure water, the well-known method of for example ion exchange method capable of using and distillation method, but suggestion needs careful operation, the unlikely impurity of sneaking into of.
With regard to ionic concn contained in the quantitatively determined extraction water, well-known method capable of using comprises and makes desire measure ionic reaction with throw out that produces insoluble salt and the method for claiming this sedimentary weight; Use the titration method of indicator; And the sample area and the reference material Method for Area of reference ion chromatogram (ion chromatogramspectrum).
If on be set forth in the sodium ion (Na in the extraction water +) and cl ions (Cl -) concentration is above 3ppm, the moisture resistance of moulded work is understood step-down, and moisture resistance reduces the migration problem that corrosion caused that is prone to cause owing to the IC lead.Chlorine ion concentration in the extraction water is 0 to 3ppm, and is preferable in 0 to 2ppm scope.If chlorine ion concentration surpasses 3ppm, then moulded work can absorb moisture, and the corrosion of IC lead can be carried out at short notice, and causes the difficulty in the practicality.Na ion concentration in the extraction water is 0 to 3ppm, and is preferable in 0 to 2ppm scope.The specific conductance of extraction water is at 0 to 100pp μ S/cm, and is preferable in 0 to 50 μ S/cm scope.If specific conductance surpasses 100 μ S/cm, or, then cause the generation of noise, cross-talk or voltage imbalance, and running causes adverse influence to circuit owing to the increase of leakage current if Na ion concentration surpasses 3ppm.
The pH value of extraction water is in 5.0 to 9.0 scope.If the pH value is lower than this scope, then the IC plain conductor particularly the corrosion phenomenon of aluminium conductor etc. can become quite remarkable.On the other hand, if the pH value is higher than this scope, then the surface of packaged piece can bleach in the plating program of lead frame, and causes not good outward appearance or be prone to cause the corrosion of IC lead.The pH value is preferable between 6.0 to 8.0.In the 6th preferred embodiments,, preferably in resin combination, contain the compound that composition (F) contains phosphorus atom as for flame retardant resistance.Under this situation, the positive phosphorus acid ion (PO in the extraction water 4 3-), orthophosphite ions (HPO 3 2-), and hypophosphite ion (H 2PO 2-) total concn (back literary composition is called " phosphate anion total concn ") preferable 0 to 30ppm, be more preferably under in 0 to 20ppm the scope.Place no humidity to control the device in place in order to make resin combination be fit to be applied in, for example be used for outdoor electronic installation and vehicle equipment, the preferable 20ppm of being less than or equal to of the concentration of phosphate anion.If the total concn of phosphate anion surpasses 30ppm, then the moulded work of resin combination system can absorb moisture, and so the corrosion of IC lead can begin to carry out at short notice; In addition; When circuit was applied voltage, electrode reaction can take place, and produced the shortcoming of for example corrosion and precipitated metal.Because except electricity usage, voltage puts on the semiconductor circuit with galvanic form usually, so above-mentioned electrode reaction can cause metal in same place, to continue deposition, causes interelectrode short circuit at last, and makes circuit function impaired.
The red phosphorus that uses the warp coating is as composition (H); No matter coating material is the organic or inorganic material; The coating program is preferably carried out with the material that one or more are selected from metal hydroxides, MOX, complex metal hydroxide and cohort that thermosetting resin is become, and this is because in above-mentioned scope, be easy to control the specific conductance of extraction water and the phosphate anion total concn in pH value and the extraction water.The combined amount of red phosphorus is haggled over good in the scope of 0.5 to 30 weight % with the total amount of epoxy resin.If combined amount is less than 0.5 weight %, then be difficult to the flame retardant resistance degree that reaches required.If combined amount surpasses 30 weight %, then be difficult to specific conductance, pH value and phosphate anion total concn are controlled in the required scope.
When using SULPHOSUCCINIC ACID ESTER, can accept its any chemical structure as composition (H).For example, can use above-mentioned SULPHOSUCCINIC ACID ESTER.Wherein, in order to be easy to that specific conductance, pH value and phosphate anion total concn are controlled in the above-mentioned scope, preferably use aromatic phosphate acid ester.In addition, preferably use the compound of an above-mentioned phosphorous nitrogen key.
Can use simultaneously the phosphorous atomic compound that belongs to composition (H) the hardening accelerator that contains phosphorus atom (E) and do not contain phosphorus atom hardening accelerator (E) the two.Preferably comprise at least phosphine compound and naphtoquinone compounds affixture, with diazabicylo hendecene phenol-novolac resin salt in one.
In the 6th embodiment; The purpose of mixing element (C) is for except that giving flame retardant resistance; Also can through suppress to separate and the elution in element of dissolved ion is come out or through absorb single from and the dissolved ion prevent the corrosion of interior metal lead, and promote moisture resistance.Though to composition (C) and unrestricted, (compound shown in the C-I) is preferable with above-mentioned composite type.The combined amount of composition (C) is adjusted to the ionic concn that can keep in the extraction water in above-mentioned scope.Generally speaking, combined amount, is preferably more than or equal to 0.5 weight part with regard to moisture resistance in 100 parts by weight of epoxy resin, and with regard to mobile, hardness and yield-power, is preferably to be less than or equal to 500 weight parts.
When using composition (C) complex metal hydroxide in order to give flame retardant resistance, the combined amount of the composition when using separately (C) is common between 10 to 500 weight parts in 100 parts by weight of epoxy resin.The combined amount of the composition when using with red phosphorus (C) is common between 0.5 to 200 weight part in 100 parts by weight of epoxy resin.When the compound with SULPHOSUCCINIC ACID ESTER or phosphorous-nitrogen key used, the combined amount of composition (C) was common between 1 to 300 weight part in 100 parts by weight of epoxy resin.
In the 7th preferred embodiments; Special than being ought be with resin combination; For example according to after state the resin combination of second aspect, when being applied on the semiconducter device of slim, multioutlet number, long side traverse and narrow weld pad spacing type, being less than or equal to 2 and mooring with regard to the melting viscosity of mobile speech composition (A) epoxy resin is preferable in 150 ℃ the time; Better be less than or equal to 1 the pool, and be more preferred from be less than or equal to 0.5 the pool.Among this paper, melting viscosity is meant the viscosity (back literary composition is called the ICI viscosity) that utilizes the ICI cone and plate viscometer measured.In addition, with regard to mobile, the melting viscosity of composition (B) solidifying agent is preferably in the time of 150 ℃ and is less than or equal to 2 pools, is more preferred to be less than or equal to 1 pool.
In preferred embodiments, except that mentioned component, resin combination of the present invention also can optionally comprise following compositions.
(1) fire retardant
Except that mentioned component (C) the complex metal hydroxide,, optionally can mix known without the halogenation and the fire retardant of stibiated composition not in order to promote flame retardant resistance.Limiting examples comprises the compound of mentioned component (H); Nitrogenous compound (for example trimeric cyanamide, melamine derivative, cyanurotriamide modified phenol resins, the compound that contains triazine ring, cyanuric acid verivate and tricarbimide verivate); And the compound of containing metal element (for example white lake, Marinco H, zinc oxide, zinc, zinc borate, iron protoxide/red stone, molybdenum oxide, zinc molybdate and dicyclopentadiene ferrous/ferrocene).Above-claimed cpd can use or make up use separately.
In above-mentioned, the coating that inorganic combustion inhibitor is preferable to have an organic materials system to be promoting its dispersiveness in resin combination, and prevents inorganic combustion inhibitor owing to absorb Decomposition that moisture causes, and promotes its hardening etc.
(2) ion capturing agent (anionite)
With regard to the moisture resistance and high temperature storage stability of promoting the semiconducter device of IC for example, ion capturing agent (anionite) can optionally be mixed in wherein.Can use all well-known ion capturing agents and not have particular restriction.Limiting examples comprises hydrotalcite and is selected from the oxyhydroxide of the element of magnesium, aluminium, titanium, zirconium and bismuth.It can use or make up use separately.In above-mentioned, (hydrotalcite shown in the C-III) is preferable with following chemical compsn formula.
Mg 1-xAl x(OH) 2(CO 3) x/2·mH 2O (C—III)
(formula (among the C-III), 0 < x≤0.5, and m is a positive number)
Though the combined amount of ion capturing agent does not have particular restriction; As long as the amount of ion capturing agent is enough to capture for example halogen ionic negatively charged ion, in composition (A) content of epoxy resin, this combined amount is preferably 0.1 to 30 weight %; Be more preferred from 0.5 to 10 weight %, the best is 1 to 5 weight %.
(3) coupler
In order to promote the tackyness between resinous principle and mineral filler, if need, mentioned component (J) coupler in addition can use or use separately with composition (J).The instance of this coupler comprises different types of silane compound, for example epoxy silane, hydrosulphonyl silane, aminosilane, alkyl silane, urea groups silane and vinyl silanes, titanium compound, aluminum chelate and aluminium/zirconium compounds.Can use the silane compound that contains one-level and/or tertiary amine base.Containing mineral filler and do not containing under the two the situation of mineral filler, the preferable combined amount of this coupler is identical with mentioned component (J).
The limiting examples of above-mentioned coupler comprises: the silane-based coupler; For example vinyl trichloro silane, vinyltriethoxysilane, base three (β-methoxyethoxy) silane, γ-methylpropenyl oxygen base propyl trimethoxy silicane, β-(3,4-epoxy cyclohexyl) ethyl trimethoxy silane, γ-glycidyl ether propyl trimethoxy silicane, vinyltriethoxysilane, γ-sulfydryl propyl trimethoxy silicane, γ-aminopropyltriethoxywerene werene, γ-[two (β-hydroxyethyl)] aminopropyltriethoxywerene werene, N-β-(amino-ethyl)-γ-TSL 8330, γ-(β-amino-ethyl) aminopropyl dimethoxy-methyl silane, N-(Trimethoxy silane base propyl group) quadrol, N-(dimethoxy-methyl siloyl group sec.-propyl) quadrol, methyltrimethoxy silane, dimethyldimethoxysil,ne, Union carbide A-162, N-β-(N-vinyl benzene methylamino ethyl)-γ-TSL 8330, γ-r-chloropropyl trimethoxyl silane, hexamethyldisilane, vinyltrimethoxy silane and γ-sulfydryl propyl group methyl dimethoxysilane; Titanic acid ester is a coupler; For example two (two tridecyl phosphorous acid esters) titanic acid ester, four (2,2-diallyl oxygen ylmethyl-1-butyl) two (two tridecyls) the phosphorous acid ester titanic acid ester of sec.-propyl three isostearoyl titanic acid ester, sec.-propyl three (dioctylphyrophosphoric acid ester) titanic acid ester, sec.-propyl three (N-amino-ethyl-amino-ethyl) titanic acid ester, four octyl groups, two (dioctylphyrophosphoric acid ester) ethoxyacetic acid ester titanic acid ester, two (dioctylphyrophosphoric acid ester) ethene titanic acid ester sec.-propyl three capryloyl titanic acid ester, sec.-propyl dimethyl allene acyl isostearoyl base titanic acid ester, sec.-propyl thirty dialkyl benzene alkylsulfonyl titanic acid ester, isopropyl stearyl-titanic acid ester, sec.-propyl three (dioctyl SULPHOSUCCINIC ACID ESTER) titanic acid ester, sec.-propyl three cumenyl phenyl titanium acid esters and two (dioctyl phosphorous acid ester) titanic acid ester of tetra isopropyl.These couplers can use or make up use separately.
(4) other additives
Optionally can mix other additives, releasing agent for example is wax, polyolefin wax, Vilaterm and oxidic polyethylene like metal-salt, the ester of higher fatty acid, higher fatty acid; Tinting material is like carbon black; And stress relaxation agent, as silicone oil by and silicone rubber and plastic powder.
Resin combination of the present invention any method capable of using makes, but as long as each raw material homodisperse mixes.As for general method, for example with the raw material of predetermined amount with thorough mixing such as mixing machines after, mix to mix fusions such as roller, extruder, then cool off and be crushed to the method for powder.In order to be easy to handle the preferable sheet that splits for preparing suitable size and weight according to condition of moulding.
According to third aspect present invention, be to provide to comprise the electronic package with the element of resin combination encapsulation according to the present invention.
The limiting examples of electronic package is included on support unit (for example lead frame (island, weld tabs), coil type support plate, circuit base material, glass and the Silicon Wafer of distribution) or the equipped base material and is equipped with for example active member (for example a semi-conductor piece of scenery, electric crystal, two utmost point official and thyristors) and passive device elements such as (for example electrical condenser, resistance and coils), and its necessary assembly encapsulates with resin combination of the present invention.To equipped base material and unrestricted, limiting examples comprises for example organic substrate, organic film, ceramic base material and glass baseplate, the glass baseplate that is used for LCD, MCM (polycrystalline sheet module) base material and mixing IC base material.
As for the package method that uses resin combination, the most generally low pressure metaideophone moulding method.Yet also can use moulding method or the hot press molding method of penetrating.
Particularly; The limiting examples of electronic package of the present invention comprises general resin package type IC; Dual-in-line package (DIP), plastic wire wafer carrier (PLCC), four sides smooth encapsulation (QFP), little outline packages (SOP), the encapsulation of little profile pin (SQJ), the smooth encapsulation of slim little outline packages (TSOP) and slim four sides (TQFP) are for example arranged; Wherein, Earlier element is fixed on the lead frame, and the end (for example weld pad) of element is connected via wire-bonded (wire bonding) or projection (bump) with lead, and then utilize the metaideophone moulding method with these elements of resin combination encapsulation of the present invention; In the coil type encapsulation (TCP), semi-conductor chip is connected with the winding support plate with projection, and encapsulates with resin combination of the present invention; Connection mode wafer (COB) module comprises active member (for example semi-conductor chip, transistor, two utmost point official and thyristors) and/or passive device (for example electrical condenser, resistance and coil) on the plate; Wherein, Connection mode wafer module and formation are connected with for example wire-bonded, chip bonding (flip chip bonding) and scolding tin with lead on circuit base material or the sheet glass on this plate, and encapsulate with resin combination of the present invention; Connection mode wafer on glass (COG) module; Mix IC; Polycrystalline sheet module (MCM); BGA (BGA); This BGA comprises and is fitted to the lip-deep element of organic substrate; And this organic substrate comprises that the distribution that base material is anti-to be surveyed uses the end; These ends are connected with projection or wire-bonded with lead on being formed at organic substrate, and form and can encapsulate by thing with resin of the present invention; Wafer size encapsulation (CSP); And polycrystalline sheet encapsulation (MCP).In addition, also can this resin combination be used for the printed wiring base material effectively.
Electronic package is preferably semiconducter device, and one or more characteristic that this semiconducter device comprises following (a) in (f).In addition, this semiconducter device can be the stacked encapsulation, and wherein, the stacked elements more than 2 or 2 is on equipped base material; Or moulding type encapsulation (mold array package), wherein, the element more than 2 or 2 encapsulates with resin combination simultaneously.
Developing in recent years electronic package is being fitted on the printing interconnection base material with high-density.Along with the development of this technology, it is main flow that semiconducter device is transferred to surface attaching type encapsulation (surface mount packages) by pin insert type encapsulation (pin insertion packages).With regard to the IC that belongs to surface attaching type encapsulation, LSI etc., it is thinner and littler that packaged piece has become.For packaged piece, the shared volume ratio of element becomes bigger, and packaged piece thickness becomes thinner, to improve equipped density and to reduce equipped height.In addition, along with multioutlet number and jumbo development, chip area has enlarged and number of leads increases.In addition,, the number of weld pad (electrode) is increased gradually through shortening weld pad spacing and weld pad size, that is, the weld pad spacing is narrowed down.
In addition, in order to meet littler, lighter packaged piece demand, the packaged piece form has been transferred to wafer size encapsulation (CSP) and the BGA (BGA) of be content with very little multioutlet number and high-density demand from four sides smooth encapsulation (QFP), little outline packages (SOP) etc.To quicken and multi-functional purpose in order reaching, to have developed the packaged piece that to have new texture (for example inversion type, stacked, flip chip type and wafer scale type).In above-mentioned, stacked packaged piece owing to have in this packaged piece, comprise a plurality of via wire-bonded the structure of stacked wafer connected to one another, therefore, a plurality of wafers with difference in functionality can be fitted in the single packaged piece to carry out multiple function.
In addition, the processing procedure about preparation CSP and BGA has developed with a plurality of chips placing the package method of a die cavity to replace the so-called moulding type package method that a chip places the existing encapsulation of a die cavity.Therefore, reached the purpose that yield-power is promoted and cost reduces.
On the other hand, when semiconductor device surface being mounted to the printed wiring base material, packaged material need satisfy the demand day by day of anti-reflow property, and with regard to the reliability after mounting, also needs heatproof degree cyclicity.Therefore, in order to give its low moisture absorption property and low swelling property,, reach to increase filler content through reducing resin viscosity.Yet, when using traditional packaged material, produce moulding defective (for example lead skew and hole) through regular meeting.Therefore, be difficult to produce and satisfy thin encapsulation, bigger chip area, more number of leads, and the semiconducter device of the demand of narrower weld pad spacing.
On packaged material, attempt several improvement satisfying above-mentioned requirement, but do not reached suitable result as yet.Again, as wherein using the stacked CSP of long side traverse, and have big die cavity volumetrical module array encapsulation type element to semiconducter device, packaged material need have better release property.
Contain composition (A) to (C) and have be less than or equal to 200KPa in satisfying this requirement and preferred application is slim in sealing at the resin combination of the present invention of shearing knockout press down behind 10 material feeding mouldings; The multioutlet number; The semiconductor element of long side traverse and narrow weld pad spacing type, or be used for sealing the semiconducter device that disposes semi-conductor chip on the equipped base material (for example organic substrate and organic membrane).
Therefore, according to second aspect of the present invention, provide that a kind of foundation is of the present invention to be used to encapsulate the epoxy resin composition for packaging with the semiconducter device that comprises following at least a characteristic:
(a) at least one of the packaged material of the packaged material of semi-conductor chip upside and semi-conductor chip downside has the thickness that is less than or equal to 0.7mm;
(b) pin count is more than or equal to 80;
(c) conductor length is more than or equal to 2mm;
(d) the weld pad spacing on the semi-conductor chip is less than or equal to 90 μ m;
(e) thickness that on equipped base material, disposes the packaged piece of semi-conductor chip is less than or equal to 2mm; And
(f) area of semi-conductor chip is more than or equal to 25mm 2
The preferable characteristic of above-mentioned semiconductor device with following (1) or (2):
(1) (a) or (e)
(2) (a) and be selected from least a characteristic of (b) to (f).
Semiconducter device is better to has in the combination of following (1) to (3) any one characteristic:
(1) (b) reaches (c);
(2) (b) reach (d); And
(3) (b), (c) reach (d).
Semiconducter device is better again to has in the combination of following (1) to (9) any one characteristic:
(1) (a) reaches (b);
(2) (a) reach (c);
(3) (a) reach (d);
(4) (a) reach (f);
(5) (c) reach (e);
(6) (a) and (b) reach (d);
(7) (c), (e) reaches (f);
(8) (a) and (b), (d) reach (f); And
(9) (a) and (b), (c) reach (d).
That is, just guarantee less hole and promote with regard to the release property, preferable with this resin combination be used to have one or more being selected from (a), (c), (d), (e) and (f) characteristic and better have (a) or (e) semiconducter device of characteristic.Just avoid with regard to reliability that demoulding stress caused reduces, better this resin combination is used for having (a) and (b) to the semiconducter device of (f) one or more characteristic.
With regard to reducing lead skew and enhancement release property; Preferable this resin combination is used to have (b) and (c) or (d); Better have (b), and better again have (b) and (c) or (b) and (d) and a better again semiconducter device with (b), (c) and characteristic (d).
With regard to guaranteeing less hole, the skew of reduction lead and enhancement release property; Preferable with this resin combination be used to have (a) and (d), (a) and (c), (a) and (d), (a) and (f) or (c) and (e); Better have (a) and (b) and (d) or (c), (e) and (f), and goodly again have (a) and (b), (d) and (f) or the semiconducter device of (a) and (b), (c) and characteristic (d).
As for above-mentioned semiconductor device, be preferable to give an example like instance person according to third aspect present invention.Semiconducter device can be stacked or moulding type.
In the back literary composition, will be with reference to showing the graphic of limiting examples, the structure of semiconducter device is specified.The similar elements symbol is being used for specifying the element with identical function respectively, and will omit each explanation in graphic.
Figure 1A to 1C shows the QFP10 with resin combination 6 (packaged material) encapsulation.In detail, with chip join agent 2 semi-conductor chip 3 is fixed on the island (weld tabs) 1.Connect the end (weld pad, bonding pads) 7 and lead foot 4 of (via wire-bonded) semi-conductor chip 3 with lead 5 after, with the above-mentioned member of packaged material 6 encapsulation.Figure 1A is the vertical view (part skeleton view) of the amplification of the vertical view (part skeleton view) of semi-conductor chip 3 and the end 7 that Fig. 1 C is semi-conductor chip 3 for sectional view, Figure 1B of semi-conductor chip 3.
With regard to semiconducter device 10; The thickness of at least one in the packaged material " a " of chip 3 upsides and the packaged material " b " of chip 3 downsides is preferably and is less than or equal to 0.7 millimeter; Be more preferred from and be less than or equal to 0.5 millimeter; Be more preferred from again and be less than or equal to 0.3 millimeter, and best for being less than or equal to 0.2 millimeter.
The thickness of packaged piece " c " (total thickness of semiconducter device 10) is preferably and is less than or equal to 2.0 millimeters, is more preferred to be less than or equal to 1.5 millimeters, be more preferred from again to be less than or equal to 1.0 millimeters, and best for being less than or equal to 0.5 millimeter.
The area of chip 3 " d " is preferably more than or equal to 25 square millimeters, is more preferred from more than or equal to 30 square millimeters, be more preferred from again more than or equal to 50 square millimeters, and the best is more than or equal to 80 square millimeters.
In addition; Semiconducter device 10 is preferably the multioutlet number type semiconductor devices that has more than or equal to 80 pins, so lead foot 4 is preferably 100 or more pins, even is more preferred from 180 or more pins; Be more preferred from 200 or more pins again, and the best is 250 or more pins.
Lead 5 length that connect semi-conductor chip 3 and lead foot 4 are preferably more than or equal to 2 millimeters, are more preferred from 3 millimeters or bigger, are more preferred from 4 millimeters or bigger again, be more preferred from 5 millimeters or bigger again, and the best are 6 millimeters or bigger.
Weld pad spacing " e " between the weld pad 7 on the semi-conductor chip 3 is preferably and is less than or equal to 90 microns, is more preferred from 80 microns or littler, is more preferred from 70 microns or littler again, be more preferred from 60 microns or littler again, and the best is 50 microns or littler.
Fig. 2 A to 2C shows the BGA 20 (BGA (ballgrid array)) with resin combination 6 (packaged material) encapsulation.In detail, with chip join agent 2 semi-conductor chip 3 is fixed on the insulating substrate 8.Behind the end of end 7 that connects semi-conductor chip 3 with lead 5 and base material 8, with the above-mentioned member of packaged material 6 encapsulation.Fig. 2 A is a sectional view, and Fig. 2 B is vertical view (fragmentary, perspective view), and Fig. 2 C is the enlarged view of weld pad part.In Fig. 2 A and following Fig. 3 B, component symbol 9 expression soldered balls.
Fig. 3 A and 3B show the stacked BGA of mold encapsulation type.Fig. 3 A is vertical view (fragmentary, perspective view), and Fig. 3 B is the sectional view that part is amplified.
Simultaneously; In the semiconducter device shown in Fig. 2 A to 2C 20 and in the semiconducter device shown in Fig. 3 A and the 3B 30, the preferred values of the area " d " of the thickness of packaged piece " c ", semi-conductor chip 3, the length of lead 5 and weld pad spacing " e " each with Figure 1A to 1C in identical.
Resin combination of the present invention can reach and reach the flame retardant resistance under the not stibiated condition without halogenation.When using this resin combination when sealing the electronic package of for example IC and LSI; Flowability and mouldability that can be good come potted electronic module, thereby the product of the electronic package of the reliability of the for example anti-reflow property of acquisition tool excellence, moisture resistance and high temperature storage property.Therefore, this resin combination has big industrial value.
Form encapsulation of electronic components with resin of the present invention; Even, also all can reduce the incidence that the flaw moulding is arranged of for example lead skew and hole when the thin type semiconducter device that is used to have above-mentioned packaged material thickness, when having the semiconducter device of above-mentioned packaged material thickness level chip area and having the semiconducter device of above-mentioned number of leads, conductor length and weld pad spacing.
Below, will the present invention be described with embodiment, but scope of the present invention is not limited to following embodiment.Embodiment
Mixing element, evaluation item and employed appraisal procedure will be explained as follows.In following embodiment, 180 ℃ of molding temperatures, 6.9MPa molding pressure, and the condition of 90 second set time under, utilize the transfer molding machine to carry out the moulding of resin combination.Under 180 ℃, carried out after fixing 5 hours then.
[mixing element]
Epoxy resin
Epoxy resin (1): biphenyl type epoxy resin (commodity are called EpicoatYX-4000H, oiling shell epoxy limited-liability company system) with fusing point of 192 epoxy equivalent (weight) and 105 ℃.
Epoxy resin (2): stilbene type epoxy resin (commodity are called ESLV-210, Sumiotomo Chemical Co., Ltd's system) with softening temperature of 210 epoxy equivalent (weight) and 130 ℃.
Epoxy resin (3): ortho-cresol-phenolic resin varnish type epoxy resin (commodity are called ESCN-190, Sumiotomo Chemical Co., Ltd's system) with softening temperature of 195 epoxy equivalent (weight) and 65 ℃.
Epoxy resin (4): the epoxy resin (commodity are by name: YSLV-120TE, Nippon Steel chemistry limited-liability company system) of sulfur atom-containing with fusing point of 244 epoxy equivalent (weight) and 118 ℃.
Epoxy resin (5): have 375 epoxy equivalent (weight), 80 ℃ the bisphenol A-type brominated epoxy resin (commodity are called ESB-400T, Sumiotomo Chemical Co., Ltd's system) of bromine content of softening temperature and 48 weight %.
Epoxy resin (6): bisphenol f type epoxy resin (commodity are called YSLV-80XY, Nippon Steel chemistry limited-liability company system) with fusing point of 186 epoxy equivalent (weight) and 75 ℃.
Solidifying agent
Solidifying agent (1): phenol-aralkyl resin (commodity are called Milex XL-225, Mitsui Chemicals Inc.'s system) with softening temperature of 172 hydroxyl equivalent and 70 ℃.
Solidifying agent (2): biphenyl type phenol resins (commodity are called MEH-7851, bright with change into plastic cement Industries, Inc system) with softening temperature of 199 hydroxyl equivalent and 80 ℃.
Solidifying agent (3): phenol-novolac resin (commodity are called H-1, bright with change into plastic cement Industries, Inc system) with softening temperature of 106 hydroxyl equivalent and 80 ℃.
Hardening accelerator
Hardening accelerator (1): the affixture of triphenylphosphine and 1,4-benzoquinones.
Hardening accelerator (2): the mixture of triphenylphosphine and 1,4-benzoquinones (mol ratio of triphenylphosphine/1,4-benzoquinones is 1/1.2).
Hardening accelerator (3): the affixture of three (4-aminomethyl phenyl) phosphines and para benzoquinone.
Hardening accelerator (4): triphenylphosphine.
Hardening accelerator (5): the affixture of three-p-methylphenyl phosphine and 1,4-benzoquinones.
Hardening accelerator (6): the mixture of three-p-methylphenyl phosphine and 1,4-benzoquinones.
(molar ratio of three-p-methylphenyl phosphine/1,4-benzoquinones equals 1/1.2)
Hardening accelerator (7): the affixture of tributylphosphine and 1,4-benzoquinones.
Hardening accelerator (8): diazabicylo hendecene phenol-novolac resin salt.
Inorganic filler
Fused silica: the spherical fused silica of specific surface area with median size and 3.8 meters squared per gram of 17.5 microns.
Fire retardant
Complex metal hydroxide: the solid solution of Marinco H and zinc hydroxide, (among the C-II), M1 is a magnesium, and M2 is a zinc, and m is 7, and n is 3, and h is 10, and a, b, c and d are all 1 in above-mentioned chemical compsn formula; (commodity are called Echomag Z10, Tateho chemical industry limited-liability company system)
Red phosphorus (commodity are called Nova Excel 140, Rinkagaku Kogyo limited-liability company system)
ANTIMONY TRIOXIDE SB 203 99.8 PCT
Condensed phosphoric acid esters shown in the above-mentioned formula (XIXa) (commodity are called PX-200, Daihachi chemical industry limited-liability company system)
Triphenyl
Marinco H (commodity are called Kisuma 5A, Kyowa chemical industry limited-liability company system).
Releasing agent
Releasing agent (1): have 8,800 weight-average molecular weight, 1 penetration coefficient, and the straight chain type oxidic polyethylene (Clariant Japanese firm product product is called PED 153) of the acid number of 30mg/KOH
Releasing agent (2): have 3,600 weight-average molecular weight, 1 penetration coefficient, and the straight chain type oxidic polyethylene (Clariant Japanese firm product product is called PED 121) of the acid number of 15mg/KOH
Releasing agent (3): have 3,100 weight-average molecular weight, 5 penetration coefficient, and the branched chain type oxidic polyethylene (Clariant Japanese firm product product is called PED 522) of the acid number of 25mg/KOH
Releasing agent (4): have 12,000 weight-average molecular weight, and the straight chain type non-oxidized polyethylene (Clariant Japanese firm product product is called PED 190) of 1 penetration coefficient
Montanate (Clariant Japanese firm product product is called Hoechst-Wax E)
The weight-average molecular weight of above-mentioned releasing agent (1) to (4) be to use the orthodichlorobenzene solvent under 140 ℃ temperature by the measured value of high temperature GPC.
Ion scavenger
(Kyowa chemical industrial company product product is called DHT-4a) to hydrotalcite
Coupler
Coupler
Anilino silane: γ-anilino propyl trimethoxy silicane
Epoxy silane: γ-glycidyl ether propyl trimethoxy silicane (commodity are called KBM403, Shin-Etsu chemistry limited-liability company system)
Other additives
POLISHING WAX-103 (Clariant Japan K.K commodity)
Carbon black (commodity are called MA-100, Mitsubishi Chemical limited-liability company system)
[evaluation item and appraisal procedure]
Flame retardant resistance
The metal die that utilizes 1/16 inch thick test piece of preparation to use carries out resin combination moulding and carries out after fixing under above-mentioned the same terms, then according to this flame retardant resistance through the resin combination of after fixing of UL-94 testing method assessment.
Hardness during cure stage
After under above-mentioned the same terms resin combination being molded as the disk of 50 mm dias and 3 mm thick, utilize Shore hardness tester type D (Shore hardness tester type D) to measure the hardness of the moulding disk in the mould immediately.
Knockout press under the shearing action
The chromium plating stainless steel that is of a size of 50 millimeters long, 35 mm wides and 0.4 mm thick is inserted in the mould that 20 millimeters radius disks of moulding use.On this stainless steel plate, make resin combination in above-mentioned condition molded.Behind the moulding, immediately stainless steel plate is extracted out, and measured maximum extraction power.Continue 10 identical experiments of repetition, and calculate average measurement value from the second time to the tenth time.Assessment averaging of income value is as the knockout press under the shearing action (MV).Assessing the tenth the measured extraction masterpiece of experiment is the knockout press (behind 10 material feeding mouldings) under the shearing action.
Helicoidal flow property
Mould according to EMMI-1-66 uses mensuration helicoidal flow property to use makes resin combination in above-mentioned the same terms molded, and records distance of flow (cm).
Disk is mobile
Use has the mobile flat plate mold that measures usefulness of one group of disk of counterdie of patrix and millimeter (deeply) * 15,200 millimeters (wide) * 200 millimeter (height) of millimeter (deeply) * 25,200 millimeters (wide) * 200 millimeter (height).The 5 gram samples (each resin combination) that essence is claimed place through heating and maintain on 180 ℃ the counterdie central part.After 5 seconds, to be heated to 180 ℃ patrix close die.In loading 78 newton, behind the condition dip mold of 90 seconds set times, come arithmetic average diameter (millimeter) mobile as disk by the major diameter (millimeter) of the moulded work that records with vernier scale and minor axis (millimeter).
Anti-reflow property
The smooth packaged piece in four sides (QFP) be fitted with 20 millimeters * 14 millimeters * 2 millimeters physical dimension of 8 millimeters * 10 millimeters * 0.4 millimeter silicon under above-mentioned the same terms on it with the resin combination moulding then carries out the after fixing step.Under 85 ℃ and 85% relative humidity wetting after, whenever under 240 ℃ heating condition, carry out reflow processing 10 seconds at a distance from one period scheduled time.Occur according to observed slight crack, the ratio of the encapsulation number of packages of slight crack to 5 test package appears in assessment.
Moisture resistance
The smooth packaged piece in four sides of 80 pins of 20 millimeters * 14 millimeters * 2.7 millimeters overall dimensions that will have the test silicon chip of 6 millimeters * 6 millimeters * 0.4 mm size that connects with aluminium (10 microns live width and 1 micron thick) line is fitted on the sull of 5 micron thick; And give moulding, and under above-mentioned the same terms, carry out the after fixing step with composition epoxy resin.Pre-treatment and wetting after, the every measurement by lead at a distance from one period scheduled time corroded the wire fracture number that is caused.According to the ratio of defective packaged piece number, assess 10 test package parts.
It is following to carry out above-mentioned pre-treatment step.Smooth packaged piece then carried out the gas phase reflow and handled 90 seconds after under 85 ℃ and 85% relative humidity wetting 72 hours under 215 ℃.Under 0.2MPa pressure and 121 ℃, carry out follow-up wetting step.
High-temperature storage characteristics
5 millimeters * 9 millimeters * 0.4 mm size test silicon chip that connects on the sull that places 5 micron thick and with aluminium (1 micron thick and 10 microns live widths) line is fitted to by 42 alloys and part with on the made lead frame of silver-colored plating with elargol.Utilize the 16 piece pin type DIP (dip of thermoelectron (thermonic) type wiring machine with the resin combination moulding with golden lead connecting wafer weld pad and inner lead; And under aforementioned condition, carry out the after fixing step Dual Inline Package).Specimen is stored in the baking box of keeping under 200 ℃, every at a distance from one section scheduled time sampling and make persistence and test.The ratio of the encapsulation number of packages of persistence defective to 10 test package parts relatively arranged, carry out the high-temperature storage characteristics assessment.
The breaking property of gate (release property index)
There is 8 millimeters * 10 millimeters * 0.4 millimeter silicon wafer to be fitted to the smooth packaged piece of 80 pins of 20 millimeters * 14 millimeters * 2 millimeters overall dimensions on the lead frame with resin combination in above-mentioned the same terms molded.Behind the moulding, observe the gate part with the gate fracture number (by the gate number of moulded work obstruction) of assessment with respect to gate number (2).
Lead deviation ratio (lead offset target)
Utilize soft X-ray measuring apparatus (PRO-TEST 100 types, SOFTEX society system), semiconducter device is carried out fluorescence observation squint with the assessment lead with the lead deviation ratio of measuring under the condition of 100V voltage and 1.5mA electric current.Like Fig. 4 and shown in Figure 5, from observing with respect to the vertical direction on lead frame surface.Measure the shortest distance " L " (end 7 that connects semi-conductor chip 3 and lead pin 4 or with the line length of the bonding part (end 10 of printed wiring base material) of base material) of wire-bonded and the maximum displacement " X " of lead 5.X/L * 100 guide line deviation ratios (%).
The hole generation
Comply with the fluorescence observation of carrying out semiconducter device with the same way as of above-mentioned measurement lead skew.Observation exists or does not exist diameter more than or equal to 0.1 millimeter hole, the hole that is produced by the number assessment of the semiconducter device number/semiconductor test that has hole then.
The character of extraction water
Utilize the transfer molding legal system to get 20 millimeters * 120 millimeters * 1 millimeter moulded work.After the curing, utilize scissors that the product of gained is cut into 1 millimeter * 1 millimeter, utilize little vibration-type shredder (NB-O type, Nittoh Kagaku limited-liability company system) to crush then.After the program that in particle crushed macrobead certainly by the screen cloth that uses 100 meshes, removes, 5 gram samples are transferred to internal coat with 50 gram zero(ppm) water to be had in the pressure tank formula container of fluorocarbon resin, and seals and handled 20 hours down in 121 ℃.After finishing dealing with, content is cooled to room temperature, takes out from container then.Utilize centrifuge separator that suspension material is precipitated then, take out water as extraction water.Ionic concn in the extraction water utilizes ion chromatography figure to measure (Shodex post ICSI90 4E and ICY-521, Showa Denko K.K. system).
(1) embodiment L
[embodiment L1 to L10, comparative example L1 to L6]
Each composition in weight part shown in the mixture table L1 is again in 80 ℃ of roll kneadings 10 minutes, with the resin combination of preparation and assessment embodiment L1 to L10 and comparative example L1 to L6.The result is shown in table L2.
Figure G2008101777498D00501
Figure G2008101777498D00511
Comparative example L4 to L6 does not comprise composition (C), complex metal hydroxide.Therefore, the flame retardant resistance deterioration of comparative example L5 and do not reach UL-94 V-O comprises the moisture resistance deterioration of the comparative example L4 of SULPHOSUCCINIC ACID ESTER, comprises the high temperature storage character deterioration of the comparative example L6 of bromide epoxy resin and antimony compounds.Has the fracture that the comparative example L1 to L3 shearing knockout press down behind 10 material feeding mouldings greater than 200KPa presents the gate of greater number, the release property that its demonstration is bad.
On the other hand, embodiment L1 to L10 has excellent flame, the fracture of few gate, and have good release property, therefore have excellent safety.
(2) embodiment M
The preparation of resin combination
Each composition shown in the mixture table MI in weight part, again in 80 ℃ of roll kneadings 10 minutes with preparation and assessment resin combination C1 to C14.The result is shown in table M2.
Figure G2008101777498D00531
Figure G2008101777498D00541
The preparation of semiconducter device (LQFP and QFP)
Use resin combination C1 to C14, the following semiconducter device that corresponds to embodiment M1 to M10 and comparative example M1 to M18 that forms.
[embodiment M1 to M10 (table M3)]
Use resin combination C1 to C10, form the corresponding semiconducter device (100-lead-in wire LQFP) of embodiment 1 to 10 as follows.To have 100mm 2The test of the 10mm * 10mm * 0.4mm of area and 80 μ m weld pad spacings is fitted on the lead framework with silicon; The gold wire that respectively has 18 μ m diameters and 3mm length through maximum is then given wire-bonded with chip and lead framework, and this integral body encapsulates to form semiconducter device respectively with corresponding resin combination again.The outside dimension of the device that is obtained is 20mm * 20mm, and the thickness of the packaged material of chip upside is 0.5mm, and the thickness of chip downside packaged material is 0.5mm, and the total thickness of device is 1.5mm.
[comparative example M1 to M4 (table M3)]
Form the semiconducter device (100-lead-in wire LQFP) of comparative example M1 to M4 with the mode identical, but use resin combination C11 to C14 with embodiment M1 to M10.
[comparative example M5 to M14 (table M4)]
Use resin combination C1 to C10, form semiconducter device (64-lead-in wire QFP-1H) of comparative example M5 to M14 as follows.To have 16mm 2The test of the 4mm * 4mm * 0.4mm of area and 100 μ m weld pad spacings is fitted on the lead framework with silicon; The maximum then gold wire that respectively has 18 μ m diameters and 1.5mm length is given wire-bonded with chip and lead framework, and this integral body encapsulates to form semiconducter device respectively with corresponding resin combination again.The outside dimension of the device that is obtained is 20mm * 20mm, and the thickness of the packaged material of chip upside is 1.1mm, and the thickness of the packaged material of chip downside is 1.1mm, and the total thickness of device is 2.7mm.
[comparative example M15 to M18 (table M4)]
Form semiconducter device (64-lead-in wire QFP-1H), but use resin combination C11 to C14 of comparative example M15 to M18 with the mode identical with comparative example M5 to M14.
The preparation of semiconducter device (OMPAC type BGA)
Use resin combination C1 to C14, form the semiconducter device of embodiment M11 to M20 and comparative example M19 to M36 as follows.
[embodiment M11 to M20 (table M5)]
Go up the meticulous lead-in wire pattern of formation at the insulated substrate of the equipped usefulness of the semi-conductor chip with 26.2mm * 26.2mm * 0.6mm outside dimension (the epoxy resin layer compound that spun glass is weaved cotton cloth and strengthened, Hitachi changes into company and produces, product be called " E-679 ").Then, the front surface that applies this substrate with scolder protective material (" PSR4000AUS5 ", the ProductName of Taiyo InkMfg. company) and surface, back (getting rid of gold-plated terminal and the external connection terminal on the reverse side on the front) are again in 120 ℃ of dryings 2 hours.To have 81mm through applying solid (" EN-X50, Hitachi change into the ProductName of company) 2The semi-conductor chip of the 9mm * 9mm * 0.51mm of area and 80 μ m weld pad spacings is fitted on the dry substrate, again in clean baking oven with the constant lift velocity by room temperature to 180 ℃ heating 1 hour, then in 180 ℃ of heating 1 hour in addition.The gold wire that respectively has 30 μ m diameters and 5mm length through maximum is given wire-bonded with the wire-bonded part with chip, under these conditions through the transfer molding method be equipped with on it with each resin combination C1 to C10 encapsulation chip substrate preceding (on) side is with the corresponding BGA device (the BGA device that 1.5mm is thick) of 26.2mm * 26.2mm * 0.9mm of forming embodiment M11 to M20.
[comparative example M19 to M22 (table M5)]
Form the corresponding semiconducter device (the BGA device that 1.5mm is thick) of comparative example M19 to M22 with the mode identical, but use resin combination C11 to C14 with embodiment M11 to M20.
[comparative example M23 to M32 (table M6)]
With the mode identical with embodiment M11 to M20, equipped have a 16mm 2The semi-conductor chip of the 4mm * 4mm * 0.51mm of area and 100 μ m weld pad spacings is given wire-bonded with the wire-bonded part with chip through the gold wire that maximum respectively has 30 μ m diameters and 1.5mm length again.Encapsulate the corresponding BGA device (BGA device that 2.5mm thick) of the front side of the substrate of equipped chip on it with each resin combination C1 to C10 through the transfer molding method under these conditions with 26.2mm * 26.2mm * 1.9mm of formation comparative example M23 to M32.
[relatively closing routine M33 to M36 (table M6)]
Form the BGA device of comparative example M33 to M36 with the mode identical, but use resin combination C11 to C14 with comparative example M23 to M32.
The preparation of semiconducter device (the stacked BGA of module array encapsulation type)
Use resin combination C1 to C14, form the semiconducter device of embodiment M21 to M30 and comparative example M37 to M54 as follows.
[embodiment M21 to M30 (table M7)]
To respectively have 9.7mm * 6.0mm * 0.4mm size, 58mm 2Area; And 80 μ m weld pad spacings; And comprise that the two chip semiconductor chips that mould that the company that changes into of the Hitachi that is attached on its reverse side produces binds film material " DF-400 " are laminated to each other on the polyimide substrate of 48mm * 171mm * 0.15mm, 56 groups of stacked dies are set as for another example shown in Fig. 3 A.Under the 200gf load, binded chips 10 seconds in 200 ℃, then in 180 ℃ of bakings 1 hour.The gold wire that respectively has 30 μ m diameters and 5mm length through maximum is afterwards given wire-bonded with the wire-bonded part with chip.Secondly; Encapsulate the corresponding BGA device (BGA device that 0.95mm thick) of the front side of the substrate that is being equipped with chip on it with each resin combination C1 to C10 through the transfer molding method under these conditions, shown in Fig. 3 B with 40mm * 83mm * 0.8mm of formation embodiment M21 to M30.
[comparative example M37 to M40 (table M7)]
Form the BGA device (the BGA device that 0.95mm is thick) of comparative example M37 to M40 with the mode identical, but use resin combination C11 to C14 with embodiment M21 to M30.
[comparative example M41 to M50 (table M8)]
With the mode identical, has 16mm but be equipped with embodiment M21 to M30 2The non-range upon range of single semi-conductor chip of the 5.1mm * 3.1mm * 0.4mm of area and 100 μ m weld pad spacings; The gold wire that respectively has 30 μ m diameters and 1.5mm length through maximum is again given wire-bonded with the wire-bonded part with chip, and the front side of substrate that is being equipped with chip on it with each resin combination C1 to C10 encapsulation through the transfer molding method under these conditions is with the corresponding BGA device (the BGA device that 2.65mm is thick) of 40mm * 83mm * 2.5mm of forming comparative example M41 to M50.
[comparative example M51 to M54 (table M8)]
Form the BGA device of comparative example M51 to M54 with the mode identical, but use resin combination C11 to C14 with comparative example M41 to M50.
The semiconducter device that is obtained through each testing evaluation embodiment M1 to M30 and comparative example M1 to M54.The result is shown in table M31 to M8.
Figure G2008101777498D00581
Figure G2008101777498D00591
[embodiment M31 to M40, comparative example M55 to M58 (table M9)]
Use resin combination C1 to C14 and carry out various assessments about safety.The result is shown in table M9.
Figure G2008101777498D00611
About the semiconducter device of comparative example M2, MI6, M20, M34, M8 and M52, be with non-halogenated and resin combination C12 that have a Marinco H encapsulates, the imperfect moulding of wire sweep (big wire sweep) or hole takes place.Non-halogenated and have the hardness deterioration of the resin combination C11 of SULPHOSUCCINIC ACID ESTER in cure stage, and the moisture resistance deterioration of the semiconducter device of the comparative example M55 that encapsulates with resin combination C11.High temperature storage character deterioration with the semiconducter device of the resin combination C13 that uses bromide fire retardant and antimony compounds and comparative example M57 that C14 encapsulates and M58.
On the other hand; Resin combination C1 to C10 has excellent flowability, and the semiconducter device of the embodiment M1 to M30 that encapsulates with these resin combinations, does not observe wire sweep (minimum wire sweep); Hole does not take place, and mouldability is excellent.In addition, the semiconducter device of embodiment M31 to M39 has excellent anti-reflow property.
About not having the comparative example M5 to M18 of (a) to (f) characteristic, the semiconducter device of M23 to M36 and M41 to M54 is not observed wire sweep (minimum wire sweep), and is not produced hole.
(3) embodiment N
[embodiment N1 to N8, comparative example N1 to N6
Mixing each composition in weight part shown in table N1 is again in 80 ℃ of roll kneadings 10 minutes, with the resin combination of preparation and assessment embodiment N1 to N8 and comparative example N1 to N6.The result is shown in table N2.
Figure G2008101777498D00631
Figure G2008101777498D00641
Ionic concn in the extraction water surpasses the comparative example N1 to N4 of set amount and uses the moisture resistance deterioration of the comparative example N5 of non-compound metal hydroxides.Comprise bromide epoxy resin and antimony compounds high temperature storage character deterioration as the comparative example N6 of fire retardant.
On the other hand, the flowability of embodiment N1 to N8, in the hardness of cure stage, anti-reflow property, moisture resistance and high temperature storage character, and any one of flame retardant resistance is all excellent.
(4) embodiment P
[embodiment P1 and P2, comparative example P1 to P4]
Each composition in weight part shown in the mixture table P1 is again in 10 minutes resin combinations with preparation and assessment embodiment P1 and P2 and comparative example P1 to P4 of 80 ℃ of roll kneadings.The result is shown in table P2.
Table P1 (unit: weight part)
Figure G2008101777498D00671
*: with respect to the consumption (wt%) of resin combination
Table P2
Figure G2008101777498D00681
*: behind 10 material feeding mouldings
As show shown in the P2, do not contain one or both anti-mobile again, moisture resistance or the high temperature storage character deterioration of comparative example P1 to P3 of epoxy resin and the complex metal hydroxide (C) of sulfur atom-containing.Use the high temperature storage character deterioration of the comparative example M4 of bromide epoxy resin and antimony compounds.
On the other hand, among embodiment M1 and the M2, anti-reflow property, moisture resistance and high temperature storage character are all good, and reach the V-0 of UL-94 test, demonstrate excellent flame-retardant performance.
(5) embodiment Q
[embodiment Q1 to Q6, comparative example Q1 to Q6]
Each composition shown in the mixture table Q1 in weight part, again in 80 ℃ of roll kneadings 10 minutes with preparation and assessment embodiment Q1 to Q6 and the prepared composition epoxy resin of comparative example Q1 to Q6.The result is shown in table Q2.
Figure G2008101777498D00691
Figure G2008101777498D00701
As show shown in the Q2, contain phosphorus compound but do not contain the mobile and anti-reflow property deterioration of comparative example Q1, Q5 and the Q6 of naphtoquinone compounds.Any one the equal deterioration that does not contain flame retardant resistance, moisture resistance and the high temperature storage character of the comparative example Q2 to Q4 of complex metal hydroxide (C).Especially, use bromide epoxy resin and antimony compounds as the high temperature storage character of the comparative example Q4 of fire retardant deterioration more.
On the other hand, embodiment Q1 to Q6 has excellent anti-reflow property, moisture resistance and high temperature storage character.Along with UL-94 test reaches V-0, also prove excellent flame.Especially, use R in the general expression (IA) wherein as the embodiment Q1 and the Q2 of alkyl and use the phosphine compound shown in the general expression (IB) and the embodiment Q4 of the affixture of naphtoquinone compounds also to demonstrate the good release property under shearing.
(6) embodiment R
Synthesizing of releasing agent
Will be as the rare mixture of 1-eicosylene of the copolymerization product between alhpa olefin and MALEIC ANHYDRIDE, 1-two dodecylenes and 1-two ten three carbon and the copolymerization product (ProductName: Nissan Electol WPB-1 of MALEIC ANHYDRIDE; NOF company product) and as the Stearyl alcohol of alcohol be dissolved in the toluene, again in 100 ℃ of reactions 8 hours.Progressively increasing temperature to the 160 ℃ above-mentioned reactive system of following heating, under reduced pressure force reaction to continue 6 hours then to remove unreacted composition in 160 ℃ to remove toluene.Obtain esterification products, composition (G): it has the releasing agent (5) of the mono-esterification rate of 34,000 weight-average molecular weight and 70 moles of %.
Use method same as described above to obtain another esterification products; It has 23; The releasing agent (6) of 000 weight-average molecular weight and 70 moles of % mono-esterification rates, but the copolymerization product (copolymerization ratio 1/1) between use propylene and MALEIC ANHYDRIDE is as the copolymerization product between α-alkene and MALEIC ANHYDRIDE.In addition, with method same as described above but use propyl alcohol as monovalent alcohol, obtain esterification compound, it is the releasing agent (7) with 20,000 weight-average molecular weight and 30 moles of % mono-esterification rates.The weight-average molecular weight here be to use THF (THF) as solvent with the measured value of GPC.
[embodiment RI to R4, comparative example R1 to R10]
Each composition in weight part shown in the mixture table R1 is again in 10 minutes resin combinations with preparation and assessment embodiment R1 to R4 and comparative example R1 to R10 of 80 ℃ of roll kneadings.Here, before the roll kneading, epoxy resin and each releasing agent are pre-mixed 6 hours at 170 ℃.The result is shown in table R2.
Figure G2008101777498D00721
Figure G2008101777498D00731
As show shown in the R2, do not conform to composition (C), (F) and (G) the release property deterioration under shearing of the comparative example R1 to R9 of any one.Comprise bromide epoxy resin and antimony compounds moisture resistance and high temperature storage character deterioration as the comparative example R10 of fire retardant again.
On the other hand, release property moisture resistance and the high temperature storage character under shearing of embodiment R1 to R4 are all good, and UL-94 test reaches V-0, the demonstration excellent flame-retardant performance.Again, there is not helicoidal flow, in the hardness of cure stage or the problem of anti-reflow property yet.
It should be noted that the present invention except that above-mentioned, under the situation that does not deviate from the novel and favourable characteristic of the present invention, the foregoing description also can be done various changes and change.Therefore, these all changes all are contained in the scope of following claim with change.

Claims (13)

1. epoxy resin composition for packaging, it contains epoxy resin (A), solidifying agent (B); And complex metal hydroxide (C); Wherein, composition (A) comprises the epoxy resin that contains sulphur atom, and the epoxy resin of this sulfur atom-containing contains the compound shown in the general formula (III):
Figure FSB00000255297700011
In the formula (III), R 1To R 8Respectively be same to each other or different to each other; And be selected from Wasserstoffatoms and have 1 to 10 carbon atom through replacing or without substituted univalence hydrocarbyl; N is 0 to 3 integer, and said compsn has the knockout press that is less than or equal to 200KPa under shearing behind 10 material feeding mouldings.
2. epoxy resin composition for packaging as claimed in claim 1, it also contains inorganic filler (D).
3. epoxy resin composition for packaging as claimed in claim 1, it further contains the compound (H) of phosphorus atom.
4. epoxy resin composition for packaging as claimed in claim 3, wherein composition (H) contains and is selected from by red phosphorus, SULPHOSUCCINIC ACID ESTER, and phosphorously form at least a compound in the cohort with nitrogen compound.
5. epoxy resin composition for packaging as claimed in claim 1, it also contains curing accelerator (E), and wherein, composition (E) contains the affixture of cyclic amidine compounds and phenol resins.
6. epoxy resin composition for packaging as claimed in claim 1; Wherein, Composition (A) also contains to be selected from by biphenyl type epoxy resin, Bisphenol F type epoxy counts fat, stilbene type epoxy resin, phenolic resin varnish type epoxy resin, at least a resin in the cohort that dicyclopentadiene-type epoxy resin, naphthalene type epoxy resin and triphenyl methane type epoxy resin are formed.
7. epoxy resin composition for packaging as claimed in claim 1; Wherein composition (B) contains and is selected from by biphenyl type phenol resins, aralkyl-type phenol resins; The dicyclopentadiene-type phenol resins, triphenyl methane type phenol resins and phenolic varnish type phenol resins are formed at least a resin in the cohort.
8. epoxy resin composition for packaging as claimed in claim 1, wherein composition (C) contains the compound shown in the composition formula (C-I):
p(M 1aOb)·q(M 2cOd)·r(M 3cOd)·mH 2O(C-I)
In the formula (C-I), M 1, M 2And M 3Be the metallic element that differs from one another, a, b, c, d, p, q and m are positive number, and r is 0 or positive number.
9. epoxy resin composition for packaging as claimed in claim 8, wherein M 1Be the metallic element that is selected from by belonging to the period 3, the alkali earth metal of IIA family and belong to IVB, IIB, VIII, IB, the metallic element in the cohort that the metallic element of IIIA and IVA family is formed, M 2It is the transition metal that is selected from IIIB to IIB family.
10. epoxy resin composition for packaging as claimed in claim 9, wherein M 1Be to be selected from by magnesium, calcium, aluminium, tin, titanium, iron, cobalt, nickel, the metallic element in the cohort that copper and zinc are formed, M 2Be to be selected from by iron, cobalt, the metallic element in the cohort that nickel, copper and zinc are formed.
11. epoxy resin composition for packaging as claimed in claim 10, wherein M 1Be magnesium, and M 2It is the metallic element that is selected from the cohort of forming by zinc and nickel.
12. epoxy resin composition for packaging as claimed in claim 8, wherein r is 0, and molar ratio p/q is 99/1 to 50/50.
13. an electronic package contains the element with each described epoxy resin composition for packaging encapsulation in the claim 1 to 12.
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MY152165A (en) 2006-06-02 2014-08-15 Hitachi Chemical Co Ltd Optical semiconductor element mounting package, and optical semiconductor device using the same
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US10580567B2 (en) 2016-07-26 2020-03-03 Samsung Electro-Mechanics Co., Ltd. Coil component and method of manufacturing the same
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624989A (en) * 1993-08-20 1997-04-29 Nitto Denko Corporation Semiconductor device
US6177489B1 (en) * 1997-01-08 2001-01-23 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin composition and semiconductor device
US6319619B1 (en) * 1997-04-21 2001-11-20 Nitto Denko Corporation Semiconductor sealing resin composition, semiconductor device sealed with the same, and process for preparing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5624989A (en) * 1993-08-20 1997-04-29 Nitto Denko Corporation Semiconductor device
US6177489B1 (en) * 1997-01-08 2001-01-23 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin composition and semiconductor device
US6319619B1 (en) * 1997-04-21 2001-11-20 Nitto Denko Corporation Semiconductor sealing resin composition, semiconductor device sealed with the same, and process for preparing semiconductor device

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