CN101410692B - 二维结构的衍射级选择的优化方法 - Google Patents

二维结构的衍射级选择的优化方法 Download PDF

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Publication number
CN101410692B
CN101410692B CN2007800105181A CN200780010518A CN101410692B CN 101410692 B CN101410692 B CN 101410692B CN 2007800105181 A CN2007800105181 A CN 2007800105181A CN 200780010518 A CN200780010518 A CN 200780010518A CN 101410692 B CN101410692 B CN 101410692B
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diffraction
profile
diffraction orders
hypothetical
orders
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CN101410692A (zh
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金文�
斯里尼瓦斯·杜迪
李世芳
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TEL Timbre Technologies Inc
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TEL Timbre Technologies Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
    • G01J3/24—Generating the spectrum; Monochromators using diffraction elements, e.g. grating using gratings profiled to favour a specific order
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
    • G01N29/4409—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison
    • G01N29/4418—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison with a model, e.g. best-fit, regression analysis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/02—Multiple-type SPM, i.e. involving more than one SPM techniques
    • G01Q60/04—STM [Scanning Tunnelling Microscopy] combined with AFM [Atomic Force Microscopy]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Signal Processing (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Radiology & Medical Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
CN2007800105181A 2006-03-24 2007-03-20 二维结构的衍射级选择的优化方法 Active CN101410692B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/388,265 US7428060B2 (en) 2006-03-24 2006-03-24 Optimization of diffraction order selection for two-dimensional structures
US11/388,265 2006-03-24
PCT/US2007/007292 WO2007112022A2 (en) 2006-03-24 2007-03-20 Optimization of diffraction order selection for two-dimensional structures

Publications (2)

Publication Number Publication Date
CN101410692A CN101410692A (zh) 2009-04-15
CN101410692B true CN101410692B (zh) 2011-06-15

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US (1) US7428060B2 (enExample)
JP (1) JP5096452B2 (enExample)
KR (1) KR101342847B1 (enExample)
CN (1) CN101410692B (enExample)
TW (1) TWI365284B (enExample)
WO (1) WO2007112022A2 (enExample)

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US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US20080013107A1 (en) * 2006-07-11 2008-01-17 Tokyo Electron Limited Generating a profile model to characterize a structure to be examined using optical metrology
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
US8040511B1 (en) * 2008-01-29 2011-10-18 Kla-Tencor Corporation Azimuth angle measurement
US9625937B2 (en) * 2008-08-18 2017-04-18 Kla-Tencor Corporation Computation efficiency by diffraction order truncation
US8560270B2 (en) * 2008-12-09 2013-10-15 Tokyo Electron Limited Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals
US20110276319A1 (en) * 2010-05-06 2011-11-10 Jonathan Michael Madsen Determination of material optical properties for optical metrology of structures
US9523800B2 (en) * 2010-05-21 2016-12-20 Kla-Tencor Corporation Computation efficiency by iterative spatial harmonics order truncation
US9239522B2 (en) 2010-10-08 2016-01-19 Kla-Tencor Corporation Method of determining an asymmetric property of a structure
TWI603070B (zh) * 2011-01-03 2017-10-21 諾發測量儀器股份有限公司 使用於複雜之圖案化結構的量測之方法及系統
US8577820B2 (en) * 2011-03-04 2013-11-05 Tokyo Electron Limited Accurate and fast neural network training for library-based critical dimension (CD) metrology
US9127927B2 (en) 2011-12-16 2015-09-08 Kla-Tencor Corporation Techniques for optimized scatterometry
US8762100B1 (en) * 2012-02-10 2014-06-24 Tokyo Electron Limited Numerical aperture integration for optical critical dimension (OCD) metrology
US10255385B2 (en) 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
US10386729B2 (en) 2013-06-03 2019-08-20 Kla-Tencor Corporation Dynamic removal of correlation of highly correlated parameters for optical metrology
US11175589B2 (en) 2013-06-03 2021-11-16 Kla Corporation Automatic wavelength or angle pruning for optical metrology
US10481088B2 (en) 2013-06-04 2019-11-19 Kla-Tencor Corporation Automatic determination of fourier harmonic order for computation of spectral information for diffraction structures
US10895810B2 (en) 2013-11-15 2021-01-19 Kla Corporation Automatic selection of sample values for optical metrology
US9588066B2 (en) 2014-01-23 2017-03-07 Revera, Incorporated Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS)
US10185303B2 (en) * 2015-02-21 2019-01-22 Kla-Tencor Corporation Optimizing computational efficiency by multiple truncation of spatial harmonics
JP6377582B2 (ja) * 2015-08-06 2018-08-22 株式会社リガク Ｘ線分析の操作ガイドシステム、操作ガイド方法、及び操作ガイドプログラム
CN105674909B (zh) * 2015-12-31 2018-06-26 天津市兆瑞测控技术有限公司 一种高精度二维轮廓测量方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
US20040167754A1 (en) * 2003-02-26 2004-08-26 Joerg Bischoff Approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer

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US5671050A (en) * 1994-11-07 1997-09-23 Zygo Corporation Method and apparatus for profiling surfaces using diffracative optics
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6891626B2 (en) * 2000-01-26 2005-05-10 Timbre Technologies, Inc. Caching of intra-layer calculations for rapid rigorous coupled-wave analyses
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6913900B2 (en) * 2001-08-29 2005-07-05 Nippon Zoki Pharmaceutical Co., Ltd. Plasma prekallikrein activation and kallikrein production assay
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7427521B2 (en) * 2002-10-17 2008-09-23 Timbre Technologies, Inc. Generating simulated diffraction signals for two-dimensional structures
US7064829B2 (en) * 2003-03-20 2006-06-20 Timbre Technologies, Inc. Generic interface for an optical metrology system
US7388677B2 (en) * 2004-03-22 2008-06-17 Timbre Technologies, Inc. Optical metrology optimization for repetitive structures
US7321426B1 (en) * 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples

Patent Citations (2)

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US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
US20040167754A1 (en) * 2003-02-26 2004-08-26 Joerg Bischoff Approximating eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer

Also Published As

Publication number Publication date
CN101410692A (zh) 2009-04-15
US7428060B2 (en) 2008-09-23
KR101342847B1 (ko) 2013-12-17
TW200806979A (en) 2008-02-01
US20070223011A1 (en) 2007-09-27
JP5096452B2 (ja) 2012-12-12
KR20080111493A (ko) 2008-12-23
JP2009530866A (ja) 2009-08-27
TWI365284B (en) 2012-06-01
WO2007112022A2 (en) 2007-10-04
WO2007112022A3 (en) 2008-10-16

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