CN101408736A - Probe-induced surface plasma resonance lithographic device and method - Google Patents
Probe-induced surface plasma resonance lithographic device and method Download PDFInfo
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- CN101408736A CN101408736A CNA2008102029757A CN200810202975A CN101408736A CN 101408736 A CN101408736 A CN 101408736A CN A2008102029757 A CNA2008102029757 A CN A2008102029757A CN 200810202975 A CN200810202975 A CN 200810202975A CN 101408736 A CN101408736 A CN 101408736A
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Abstract
The invention provides probe induction surface plasmon resonance lithographic equipment and a photoetching method thereof. The device consists of a surface plasma excitation device, a probe control device, a sample platform, a probe state detection device, an optical microscope and a control system. The device has the characteristics that the needed laser power is low, the photoetching distinguishability is high, the probe is not easy to be damaged, and the photoetching film is simple; in addition, the device has the function of an atomic force microscope.
Description
Technical field
The present invention relates to lithographic equipment, particularly a kind of probe-induced surface plasma resonance lithographic equipment and photoetching method thereof.
Background technology
Along with technology rapid development such as nanoprocessing, microelectromechanical systems (MEMS), integrated circuit, also become the focus of various countries' researchs for the photoetching technique of its service.The photoetching technique of using in semiconductor industry has satisfied the requirement that the micro-nano device characteristic dimension further dwindles to a certain extent just along the technology path fast development of UV-DUV-EUV.Yet, at nanoprocessing, MEMS and some special integrated circuit connections, because characteristics such as personalization of product, short run and update cycle shorten, the technology that can't use large scale integrated circuit to adopt is processed, and the litho machine of using in the semiconductor industry costs an arm and a leg, and the investment of several hundred million units has also been erected very high threshold for the utilization of photoetching technique easily.Research and develop the important branch that the lithographic equipment with characteristics such as cost is low, simple to operate, resolution height has just become the photoetching technique development.At present, in this branch, there have been multiple technologies to produce, as laser direct-writing technology, probe lithographic technique and near field optic photoetching technique etc.
Aspect the near field optic photoetching technique, the near-field scanning optical microscope (abbreviating NSOM as) of the employing conical fiber probes such as Betzig of U.S.'s Bell Laboratory, on traditional photoresist, realize being about the photoetching line of 100nm at an easy rate, shown the advantage that luminous point is not influenced by diffraction limit near field optic.But the optical fiber probe that this photoetching method adopts damages easily, and the transmission efficiency of the light in optical fiber probe inner conical zone is extremely low, is 10
-6NSOM photoetching speed is slow, be generally about 5 μ m/s, and the photoetching scope is very little, and maximum has only about 100 μ m * 100 μ m, and practical application is very limited.Kuwahara etc. are used for photoetching with ultra-resolution near-field structure, and have carved the groove of live width less than 100nm under radiation of visible light.So far the ultra-resolution near-field structure photoetching technique has realized the following measuring point of 50nm, has extraordinary prospect.But many problems have also been found in research in recent years: the one, and mask layer occurs the heat fatigue phenomenon easily and causes the super-resolution performance to descend; The 2nd, adopt noble metal (as platinum, gold and palladium etc.) and sandwich construction (what have at present reaches 9 layers), complex manufacturing technology, cost costliness; The 3rd, need utilize the dynamic effect in the discoid medium high speed rotating, be difficult to be applied to the pattern etching of arbitrary shape.
The probe-induced surface plasma resonance photoetching technique belongs to the category of near field optic photoetching technique, it utilizes probe in the distance of near field (noncontact) the surface plasma body resonant vibration enhanced field that medium/metal level interface forms to be carried out disturbance, the luminous energy that feasible coupling is gathered is propagated in closing on the zone of probe, thereby realize the leakage of high-energy light at the probe place, and then on dielectric surface, realize etching.
Though the principle of this technology is suggested, Dui Ying lithographic equipment does not also occur with it, and therefore designing a kind of corresponding with it lithographic equipment just becomes necessary work.
Summary of the invention
The objective of the invention is to according to probe-induced surface plasma resonance photoetching principle, a kind of probe-induced surface plasma resonance lithographic equipment and photoetching method thereof are provided, this device has that the required laser power of photoetching is low, photoetching resolution is high, not fragile probe and photoetching rete characteristic of simple, and this device also has the function of atomic force microscope.
Technical solution of the present invention is:
A kind of probe-induced surface plasma resonance lithographic equipment is characterized in that this device is made up of surface plasma excitation apparatus, probe control device, sample stage, probe status pick-up unit, optical microscope and control system:
1. described surface plasma excitation apparatus is to produce surface plasma body resonant vibration at sample surfaces, for photoetching provides energy source, this plasma excitation apparatus is by the photoetching laser instrument, beam expanding lens, first catoptron, focus lamp, smaller part ball convex lens, refractive index oil and sample are formed, its position relation is: the directional light by described photoetching laser emitting expands bundle through beam expanding lens, after first mirror reflects and focus lamp are assembled, through described smaller part ball convex lens, refractive index oil focuses on the upper surface of described sample, described refractive index oil level is between the last plane and described sample of described smaller part ball convex lens, and the refractive index of described refractive index oil is identical with the refractive index of described smaller part ball convex lens;
2. described probe control device is by probe and probe base, the one dimension piezoelectric ceramics, support, screw thread pair and motor constitute, described probe and probe base are fixed on the described one dimension piezoelectric ceramics, this one dimension piezoelectric ceramics, screw thread pair and motor are installed on the described support, described support is connected with the base contact of described sample stage by the axle head of motor and two screw rods, described probe of described one dimension Piezoelectric Ceramic and probe base in the vertical direction move, described screw thread pair is used for the height of described probe of manual adjustments and probe base, and described motor is used to drive described probe in the vertical direction and approaches described sample automatically;
3. described sample stage is made of base, two-dimensional piezoelectric pottery, sample holder, described two-dimensional piezoelectric pottery places on the described base and with described sample holder and links to each other, described sample holder is that sample is placed and fixing platform, the described sample holder of described two-dimensional piezoelectric ceramic driving drives the motion in the horizontal direction of described sample, to regulate the photoetching position of sample;
4. described probe status pick-up unit is by detection laser, convergent mirror, second catoptron, the 3rd catoptron, imaging mirror and 4 quadrant detector are formed, its position relation is: assembled after second mirror reflects through described convergent mirror by the laser that described detection laser is sent, convergent point drops on the probe tip back side of described probe and probe base, by the reflected light of this probe tip backside reflection through the 3rd mirror reflects, described imaging mirror is imaged on the described 4 quadrant detector, thereby is used for the definite probe tip of deformation of detector probe needle point and the pressure size between the sample;
5. described optical microscope be positioned at described sample stage and described probe status pick-up unit directly over, be used for the position of observation sample and probe tip;
6. described control system links to each other with 4 quadrant detector with described photoetching laser instrument, one dimension piezoelectric ceramics, motor, two-dimensional piezoelectric pottery respectively, the data that provide according to described 4 quadrant detector, obtain the state between probe and the sample surfaces, drive described sample stage motion, the control surface excitation device produces surface plasma body resonant vibration between described probe tip and sample surfaces, carry out photoetching.
Described photoetching laser instrument is the adjustable semiconductor laser of pulse, or the pulsed laser system of being made up of solid continuous wave laser or gas laser continuator and photomodulator.
Described motor is servomotor or stepper motor.
Described detection laser can be various continuous wave lasers.
Described optical microscope is the microscope of eye-observation, or charge-coupled image sensor, or CMOS (Complementary Metal Oxide Semiconductor) is as the microscope of receiving device.
Described focus lamp, convergent mirror, imaging mirror are lens or are made of the lens combination how soon lens are formed.
Described control system is a computing machine, or is made up of computing machine and control box.
The method of utilizing above-mentioned probe-induced surface plasma resonance lithographic equipment to carry out photoetching comprises the steps:
1. sample is placed on the sample holder of described sample stage and fixing;
2. regulate the position of first catoptron, make by the light beam after the light beam line focus mirror focusing of first mirror reflects to equate with the surface plasma body resonant vibration angle of sample with the angle of sample upper surface;
3. regulate described screw thread pair and drive described motor, described probe tip is approached to described sample surfaces, detect by optical microscope and probe status pick-up unit in the approximate procedure, distance between described probe tip and sample surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics, described support approximate horizontal;
4. under the control of described control system, carry out photoetching by following flow process:
5. drive described two-dimensional piezoelectric pottery and actuate described sample holder and drive described sample, make the punctum for the treatment of of sample be positioned at the below of described probe tip;
6. driving described one dimension piezoelectric ceramics makes described probe tip further approach sample and keeps the distance of several nanometers with sample surfaces;
7. trigger described photoetching laser instrument and launch a laser pulse, surface excitation at described sample goes out surface plasma and produces resonance, between described sample and probe tip, produce the local enhanced field, utilize the surface etch bright dipping punctum of the high temperature of this local enhanced field generation at sample;
8. repeat above-mentioned steps 5., 6., 7., finish photoetching until all punctums for the treatment of;
9. after photoetching is finished, start described motor-driven probe tip and leave described sample surfaces.
Probe-induced surface plasma resonance lithographic equipment of the present invention also has the function of atomic force microscope, and the sample after utilizing probe-induced surface plasma resonance lithographic equipment of the present invention to photoetching carries out the atomic force method for scanning, comprises the steps:
1. control described two-dimensional piezoelectric pottery, make probe tip be positioned at the top of regional starting point to be scanned;
2. according to the described one dimension piezoelectric ceramics of signal controlling of gathering 4 quadrant detector, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant, or keep constant distance;
3. write down the output valve of described one dimension piezoelectric ceramics, as the sample surfaces elevation information;
4. repeat above-mentioned steps 1., 2., 3., until having scanned whole zones to be scanned;
5. make probe tip leave described sample surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
Utilize probe-induced surface plasma resonance lithographic equipment of the present invention to as yet not the sample of photoetching carry out the atomic force method for scanning, comprise the steps:
1. sample is placed on the sample holder of described sample stage and fixing;
2. regulate the position of first catoptron, make by the light beam after the light beam line focus mirror focusing of first mirror reflects to equate with the surface plasma body resonant vibration angle of sample with the angle of sample upper surface;
3. regulate described screw thread pair and drive described motor, described probe tip is approached to described sample surfaces, detect by optical microscope and probe status pick-up unit in the approximate procedure, distance between described probe tip and sample surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics, described support approximate horizontal;
4. control described two-dimensional piezoelectric pottery, make probe tip be positioned at the top of regional starting point to be scanned;
5. according to the described one dimension piezoelectric ceramics of signal controlling of gathering 4 quadrant detector, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant, or keep constant distance;
6. write down the output valve of described one dimension piezoelectric ceramics, as the sample surfaces elevation information;
7. repeat above-mentioned steps 4., 5., 6., until having scanned whole zones to be scanned;
8. make probe tip leave described sample surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
If probe during near sample surfaces support have certain angle, for example 5 °, then the ratio of measured value and theoretical value is 1/cos (5 °)=1.004, error only is 4/1000ths.So the levelness that can regulate support according to error requirements.
Probe-induced surface plasma resonance lithographic equipment of the present invention does not still have similarly device both at home and abroad.Compare with other lithographic equipments formerly, have the following advantages:
1, photoetching resolution height: the resolution of photoetching is suitable with the diameter of used probe tip, and the diameter of probe tip can be accomplished below the 20nm, therefore adopts this lithographic equipment can be easy to realize the photoetching of the following live width of 50nm;
2, the needed laser power of photoetching is low: needle point that surface plasma body resonant vibration causes and the local fields between the sample surfaces strengthen gathers energy height, and very low luminous power can realize photoetching.For example use the laser instrument of tens milliwatts can on silverskin, make pattern by lithography;
3, adopt the control method control probe and the sample of atomic force microscope, improved the bearing accuracy of probe and the alignment precision of photoetching;
4, photoetching process middle probe needle point and sample adopt noncontact mode, so probe is not fragile;
5, the photoetching rete is simple, can directly carry out photoetching on metal films such as silverskin, golden film, does not need special film material; The probe of photoetching adopts common atomic force probe, need not to carry out additional processing;
6, device adopts modular design, and maintenance and upgrading are convenient;
7, device itself has all functions of atomic force microscope, can the sample before and after the photoetching be scanned, and can realize online detection, avoids sample to move the troublesome operation of bringing between lithography apparatus and detecting instrument.
In sum, apparatus of the present invention have that the required laser power of photoetching is low, photoetching resolution is high, not fragile probe and photoetching rete characteristic of simple, and this device also has the function of atomic force microscope.
Description of drawings
Fig. 1 is that the system of probe-induced surface plasma resonance lithographic equipment of the present invention forms synoptic diagram;
Fig. 2 is the structural representation of first preferred embodiment of the present invention;
Fig. 3 is the vertical view of Fig. 2 middle probe control device 2;
Fig. 4 is the structural representation of second preferred embodiment of the present invention;
Fig. 5 is another possibility synoptic diagram of surface plasma excitation apparatus 1 of the present invention;
Fig. 6 is the second possibility synoptic diagram of probe status pick-up unit 4 of the present invention;
Fig. 7 is the 3rd a possibility synoptic diagram of probe status pick-up unit 4 of the present invention
Fig. 8 is the 4th a possibility synoptic diagram of probe status pick-up unit 4 of the present invention
Embodiment
With embodiment detail of the present invention and method of operating are described in detail with reference to the accompanying drawings, but should limit protection scope of the present invention with this.
See also Fig. 1, Fig. 2 and Fig. 3 earlier, Fig. 1 is that the system of probe-induced surface plasma resonance lithographic equipment of the present invention forms synoptic diagram; Fig. 2 is the structural representation of first preferred embodiment of the present invention; Fig. 3 is the vertical view of Fig. 2 middle probe control device 2; As seen from the figure, probe-induced surface plasma resonance lithographic equipment of the present invention is made up of surface plasma excitation apparatus 1, probe control device 2, sample stage 3, probe status pick-up unit 4, optical microscope 5 and control system 6: referring to Fig. 2 and Fig. 3, the structure of first preferred embodiment of the present invention comprises:
1. described surface plasma excitation apparatus 1 provides the energy for photoetching, this plasma excitation apparatus 1 is by the adjustable semiconductor laser 101a of pulse, beam expanding lens 103, first catoptron 104, focus lamp 105, smaller part ball convex lens 106, refractive index oil 107 and sample 108 are formed, its position relation: described refractive index oil 107 is on the described smaller part ball convex lens 106 between plane and the described sample 108, the refractive index of described refractive index oil 107 is identical with the refractive index of described smaller part ball convex lens 106, directional light by described photoetching laser instrument 101a outgoing expands bundle through beam expanding lens 103, after 104 reflections of first catoptron and focus lamp 105 are assembled, through described smaller part ball convex lens 106, refractive index oil 107 focuses on the upper surface of described sample 108;
2. described probe control device 2 is by probe and probe base 201, one dimension piezoelectric ceramics 202, support 203, screw thread pair 204 and stepper motor 205 constitute, described probe and probe base 201 are fixed on the described one dimension piezoelectric ceramics 202, this one dimension piezoelectric ceramics 202, screw thread pair 204 and stepper motor 205 are installed on the described support 203, described support 203 is positioned on the base 301 of described sample stage 3 by the axle head of stepper motor 205 and the axle head of screw thread pair 204, described one dimension piezoelectric ceramics 202 drives described probe and probe base 201 in the vertical directions move, described screw thread pair 204 is used for the height of described probe of manual adjustments and probe base 201, and described stepper motor 205 is used to drive described probe in the vertical direction and approaches described sample 108 automatically;
3. described sample stage 3 is made of base 301, two-dimensional piezoelectric pottery 302, sample holder 303, described two-dimensional piezoelectric pottery 302 places on the described base 301 and with described sample holder 303 and links to each other, described sample holder 303 is that sample 108 is placed and fixing platform, described two-dimensional piezoelectric pottery 302 drives described sample holder 303 and drives the motion in the horizontal direction of described sample 108, to regulate the photoetching position of sample 108;
4. described probe status pick-up unit 4 is by detection laser 401, convergent mirror 402a, second catoptron 403, the 3rd catoptron 404, imaging mirror 405 and 4 quadrant detector 406 are formed, its position relation is: assembled after 403 reflections of second catoptron through described convergent mirror 402a by the laser that described detection laser 401 is sent, convergent point drops on the probe tip back side of described probe and probe base 201, reflected light by this probe tip backside reflection reflects through the 3rd catoptron 404, described imaging mirror 405 is imaged on the described 4 quadrant detector 406, thereby the pressure size between probe tip and the sample is determined in the deformation that is used for the detector probe needle point, can regulate the spot size on the 4 quadrant detector 406 and the sensitivity of system by regulating distance between 4 quadrant detector 406 and the imaging mirror 405;
5. described optical microscope 501 be positioned at described sample stage 3 and described probe status pick-up unit 4 directly over, be used for the position of observation sample and probe tip;
6. described control system 6 comprises computing machine 601 and control box 602.The effect of computing machine 601 is to send various control commands to control box 602, and the view data that control box 602 transmits is carried out post-processed, demonstration.Described computing machine 601 links to each other with 4 quadrant detector 406 by described control box 602 and described semiconductor laser 101a, one dimension piezoelectric ceramics 202, stepper motor 205, two-dimensional piezoelectric pottery 302, the data that provide according to described 4 quadrant detector 406, obtain the state between probe and the sample surfaces, drive described sample stage 3 motions, control surface excitation device 1 produces surface plasma body resonant vibration between described probe tip and sample surfaces, carry out photoetching.
This control box 602 comprises following four effects at least:
1) data acquisition: the signal that is used to receive 4 quadrant detector 406;
2) output control: the rotation of semiconductor laser modulation 101a, drive stepping motor 205, driving one dimension piezoelectric ceramics 202 and two-dimensional piezoelectric pottery 302
3) Control Software: total system is coordinated and controlled;
4) and the communication system between the computing machine: the instruction of receiving computer is also given computing machine with the data transfer of obtaining.
In said apparatus, described stepper motor 205 also can be a servomotor.
In said apparatus, described optical microscope 501 is microscopes of eye-observation, or charge-coupled image sensor, or CMOS (Complementary Metal Oxide Semiconductor) is as the microscope of receiving device.
In said apparatus, described focus lamp 105, convergent mirror 402a, imaging mirror 405 are lens or are made of the lens combination how soon lens are formed.
The concrete operations step of utilizing above-mentioned first preferred embodiment device to carry out photoetching is as follows:
1. sample 108 is placed on the sample holder 303 of described sample stage 3 and fixing;
2. regulate the position of first catoptron 104, make by the light beam after 105 focusing of first catoptron, 104 beam reflected line focus mirrors and equate that with the surface plasma body resonant vibration angle of sample 108 this angle records according to the different material structure of photoetching with the angle of sample 108 upper surfaces;
3. regulate described screw thread pair 204 and drive described stepper motor 205, described probe tip is approached to described sample 108 surfaces, detect by optical microscope 501 and probe status pick-up unit 4 in the approximate procedure, distance between described probe tip and sample 108 surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics 202, described support 203 approximate horizontal;
4. under the control of described control system 6, carry out photoetching by following flow process:
5. drive described two-dimensional piezoelectric pottery 302 and actuate the described sample 108 of described sample holder 303 drives, make the punctum for the treatment of of sample 108 be positioned at the below of described probe tip;
6. driving described one dimension piezoelectric ceramics 202 makes described probe tip further approach sample 108 and keeps the distance of several nanometers, for example 2nm with sample 108 surface;
7. trigger described semiconductor laser 101a and launch a laser pulse, surface excitation at described sample 108 goes out surface plasma and produces resonance, between described sample 108 and probe tip, produce the local enhanced field, utilize the surface etch bright dipping punctum of the high temperature of this local enhanced field generation at sample 108;
8. repeat above-mentioned steps 5., 6., 7., finish photoetching until all punctums for the treatment of;
9. after photoetching is finished, start described stepper motor 205 driving probe tips and leave described sample 108 surfaces.
Figure after the photoetching can utilize apparatus of the present invention to carry out atomic force scanning, also can scan to check the sample surfaces pattern non-photoetching sample:
Sample after utilizing probe-induced surface plasma resonance lithographic equipment of the present invention to photoetching carries out the atomic force method for scanning, it is characterized in that comprising the steps:
1. control described two-dimensional piezoelectric pottery 302, make probe tip be positioned at the top of regional starting point to be scanned;
2. according to the described one dimension piezoelectric ceramics 202 of signal controlling of gathering 4 quadrant detector 406, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant, or keep constant distance;
3. write down the output valve of described one dimension piezoelectric ceramics 202, as sample surfaces 108 elevation informations;
4. repeat above-mentioned steps 1., 2., 3., until having scanned whole zones to be scanned;
5. make probe tip leave described sample 108 surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
Utilize probe-induced surface plasma resonance lithographic equipment of the present invention to as yet not the sample of photoetching carry out the atomic force method for scanning, it is characterized in that comprising the steps:
1. sample 108 is placed on the sample holder 303 of described sample stage 3 and fixing;
2. regulate the position of first catoptron 104, make by the light beam after 105 focusing of first catoptron, 104 beam reflected line focus mirrors to equate with the surface plasma body resonant vibration angle of sample 108 with the angle of sample 108 upper surfaces;
3. regulate described screw thread pair 204 and drive described stepper motor 205, described probe tip is approached to described sample 108 surfaces, detect by optical microscope 501 and probe status pick-up unit 4 in the approximate procedure, distance between described probe tip and sample 108 surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics 202, described support 203 approximate horizontal;
4. control described two-dimensional piezoelectric pottery 302, make probe tip be positioned at the top of regional starting point to be scanned;
5. according to the described one dimension piezoelectric ceramics 202 of signal controlling of gathering 4 quadrant detector 406, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant (contact), or keep constant distance (contactless);
6. write down the output valve of described one dimension piezoelectric ceramics 202, as sample surfaces 108 elevation informations;
7. repeat above-mentioned steps 4., 5., 6., until having scanned whole zones to be scanned;
8. make probe tip leave described sample 108 surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
Fig. 4 is second preferred embodiment device of the present invention, and be with first preferred embodiment device difference: control system 6 only is made up of a computing machine 601.Finish the repertoire of control box 602 and computing machine 601 in first preferred embodiment device by computing machine 601, other system is identical with first preferred embodiment device with control method.
Fig. 5 is a possibility of surface plasma excitation apparatus 1 of the present invention.The difference of the surface plasma excitation apparatus 1 in this programme and first and second preferred embodiments is: use a laser instrument 101b and photomodulator 102 alternative semiconductors laser instrument 101a in this programme.Is that whole operations of object change into photomodulator 102 operated and get final product with control system 6 with semiconductor laser 101a.
In said apparatus, described laser instrument 101b can be solid state laser or gas laser etc. all can not self-modulation laser instrument.
In said apparatus, described photomodulator 102 can be that acousto-optic modulator, electrooptic modulator, magneto-optic modulator or other can carry out the optical modulation device of break-make modulation to light.
Fig. 6 is a possibility of probe control device 2 of the present invention.Be with the difference of probe control device 2 in first and second preferred embodiment: removed two screw thread pairs 204, increased a guide rail 206.Guide rail 206 is installed on the base 301, and motor 205 is installed on the support 203 and drives support 203 and moves up and down along guide rail 206.
When using this possibility, the difference of the operation steps of device and the operation steps of first preferred embodiment is to regulate screw thread pair.
Fig. 7 is first possibility of probe status pick-up unit 4 of the present invention.Be with the difference of probe status pick-up unit 4 in first and second preferred embodiments: will assemble mirror 402a and become convergent mirror 402b.Convergent mirror 402b is identical with the function of convergent mirror 402a, all is the needle point places that detection laser 401 emitting lasers are focused at probe.
Fig. 8 is second possibility of probe status pick-up unit 4 of the present invention.Be with the difference of probe status pick-up unit 4 in first and second preferred embodiments: removed the 3rd catoptron 404, convergent mirror 402a and convergent mirror 402b can choose one wantonly and be combined into the probe status pick-up unit.
Claims (10)
1, a kind of probe-induced surface plasma resonance lithographic equipment is characterized in that this device is made up of surface plasma excitation apparatus, probe control device, sample stage, probe status pick-up unit, optical microscope and control system:
1. described surface plasma excitation apparatus provides the energy for photoetching, this plasma excitation apparatus is by the photoetching laser instrument, beam expanding lens, first catoptron, focus lamp, smaller part ball convex lens, refractive index oil and sample are formed, its position relation is: described refractive index oil level is between the last plane and described sample of described smaller part ball convex lens, the refractive index of described refractive index oil is identical with the refractive index of described smaller part ball convex lens, directional light by described photoetching laser emitting expands bundle through beam expanding lens, after first mirror reflects and focus lamp are assembled, through described smaller part ball convex lens, refractive index oil focuses on the upper surface of described sample;
2. described probe control device is by probe and probe base, the one dimension piezoelectric ceramics, support, screw thread pair and motor constitute, described probe and probe base are fixed on the described one dimension piezoelectric ceramics, this one dimension piezoelectric ceramics, screw thread pair and motor are installed on the described support, described support is positioned on the base of described sample stage by the axle head of motor and the axle head of screw thread pair, described probe of described one dimension Piezoelectric Ceramic and probe base in the vertical direction move, described screw thread pair is used for the height of described probe of manual adjustments and probe base, and described motor is used to drive described probe in the vertical direction and approaches described sample automatically;
3. described sample stage is made of base, two-dimensional piezoelectric pottery, sample holder, described two-dimensional piezoelectric pottery places on the described base and with described sample holder and links to each other, described sample holder is that sample is placed and fixing platform, the described sample holder of described two-dimensional piezoelectric ceramic driving drives the motion in the horizontal direction of described sample, to regulate the photoetching position of sample;
4. described probe status pick-up unit is by detection laser, convergent mirror, second catoptron, the 3rd catoptron, imaging mirror and 4 quadrant detector are formed, its position relation is: assembled after second mirror reflects through described convergent mirror by the laser that described detection laser is sent, convergent point drops on the probe tip back side of described probe and probe base, by the reflected light of this probe tip backside reflection through the 3rd mirror reflects, described imaging mirror is imaged on the described 4 quadrant detector, thereby is used for the definite probe tip of deformation of detector probe needle point and the pressure size between the sample;
5. described optical microscope be positioned at described sample stage and described probe status pick-up unit directly over, be used for the position of observation sample and probe tip;
6. described control system links to each other with 4 quadrant detector with described photoetching laser instrument, one dimension piezoelectric ceramics, motor, two-dimensional piezoelectric pottery respectively, the data that provide according to described 4 quadrant detector, obtain the state between probe and the sample surfaces, drive described sample stage motion, the control surface excitation device produces surface plasma body resonant vibration between described probe tip and sample surfaces, carry out photoetching.
2, probe-induced surface plasma resonance lithographic equipment according to claim 1, it is characterized in that described photoetching laser instrument is the adjustable semiconductor laser of pulse, or the pulsed laser system of forming by solid continuous wave laser or gas laser continuator and photomodulator.
3, probe-induced surface plasma resonance lithographic equipment according to claim 1 is characterized in that described motor (205) is servomotor or stepper motor.
4, probe-induced surface plasma resonance lithographic equipment according to claim 1 is characterized in that described detection laser is a continuous wave laser.
5, probe-induced surface plasma resonance lithographic equipment according to claim 1, it is characterized in that described optical microscope is the microscope of eye-observation, or charge-coupled image sensor, or CMOS (Complementary Metal Oxide Semiconductor) is as the microscope of receiving device.
6, probe-induced surface plasma resonance lithographic equipment according to claim 1 is characterized in that described focus lamp, convergent mirror, imaging mirror are lens or are made of the lens combination how soon lens are formed.
7, probe-induced surface plasma resonance lithographic equipment according to claim 1, its spy is characterised in that described control system is a computing machine, or is made up of computing machine and control box.
8, the method for utilizing the described probe-induced surface plasma resonance lithographic equipment of claim 1 to carry out photoetching is characterized in that comprising the steps:
1. sample is placed on the sample holder of described sample stage and fixing;
2. regulate the position of first catoptron, make by the light beam after the light beam line focus mirror focusing of first mirror reflects to equate with the surface plasma body resonant vibration angle of sample with the angle of sample upper surface;
3. regulate described screw thread pair and drive described motor, described probe tip is approached to described sample surfaces, detect by optical microscope and probe status pick-up unit in the approximate procedure, distance between described probe tip and sample surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics, described support approximate horizontal;
4. under the control of described control system, carry out photoetching by following flow process:
5. drive described two-dimensional piezoelectric pottery and actuate described sample holder and drive described sample, make the punctum for the treatment of of described sample be positioned at the below of described probe tip;
6. driving described one dimension piezoelectric ceramics makes described probe tip further approach sample and keeps the distance of several nanometers with sample surfaces;
7. trigger described photoetching laser instrument and launch a laser pulse, surface excitation at described sample goes out surface plasma and produces resonance, between described sample and probe tip, produce the local enhanced field, utilize the surface etch bright dipping punctum of the high temperature of this local enhanced field generation at sample;
8. repeat above-mentioned steps 5., 6., 7., finish photoetching until all punctums for the treatment of;
9. after photoetching is finished, start described motor-driven probe tip and leave described sample surfaces.
9, the sample after utilizing the described probe-induced surface plasma resonance lithographic equipment of claim 1 to photoetching carries out the atomic force method for scanning, it is characterized in that comprising the steps:
1. control described two-dimensional piezoelectric pottery, make probe tip be positioned at the top of regional starting point to be scanned;
2. according to the described one dimension piezoelectric ceramics of signal controlling of gathering 4 quadrant detector, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant, or keep constant distance;
3. write down the output valve of described one dimension piezoelectric ceramics, as the sample surfaces elevation information;
4. repeat above-mentioned steps 1., 2., 3., until having scanned whole zones to be scanned;
5. make probe tip leave described sample surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
10, utilize the described probe-induced surface plasma resonance lithographic equipment of claim 1 to as yet not the sample of photoetching carry out the atomic force method for scanning, it is characterized in that comprising the steps:
1. sample is placed on the sample holder of described sample stage and fixing;
2. regulate the position of first catoptron, make by the light beam after the light beam line focus mirror focusing of first mirror reflects to equate with the surface plasma body resonant vibration angle of sample with the angle of sample upper surface;
3. regulate described screw thread pair and drive described motor, described probe tip is approached to described sample surfaces, detect by optical microscope and probe status pick-up unit in the approximate procedure, distance between described probe tip and sample surfaces is near the intermediate value of the range of described one dimension piezoelectric ceramics, described support approximate horizontal;
4. control described two-dimensional piezoelectric pottery, make probe tip be positioned at the top of regional starting point to be scanned;
5. according to the described one dimension piezoelectric ceramics of signal controlling of gathering 4 quadrant detector, make described probe tip contact described sample surfaces and the value of keep-uping pressure constant, or keep constant distance;
6. write down the output valve of described one dimension piezoelectric ceramics, as the sample surfaces elevation information;
7. repeat above-mentioned steps 4., 5., 6., until having scanned whole zones to be scanned;
8. make probe tip leave described sample surfaces, obtain the sample surfaces pattern by the software processes sample surface information.
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| CNA2008102029757A CN101408736A (en) | 2008-11-19 | 2008-11-19 | Probe-induced surface plasma resonance lithographic device and method |
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| CNA2008102029757A CN101408736A (en) | 2008-11-19 | 2008-11-19 | Probe-induced surface plasma resonance lithographic device and method |
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| CN102303840A (en) * | 2011-06-24 | 2012-01-04 | 上海交通大学 | Preparation method of nano-imprint template in vector type AFM (atomic force microscopy) nano processing system |
| CN104049468A (en) * | 2013-03-14 | 2014-09-17 | 台湾积体电路制造股份有限公司 | System and method for applying photoetching technology in semiconductor device manufacture |
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| CN102303840A (en) * | 2011-06-24 | 2012-01-04 | 上海交通大学 | Preparation method of nano-imprint template in vector type AFM (atomic force microscopy) nano processing system |
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| CN106444306A (en) * | 2016-08-09 | 2017-02-22 | 电子科技大学 | High-precision alignment device and method of axis under symmetric elastic clamping structure |
| CN106444290A (en) * | 2016-08-09 | 2017-02-22 | 电子科技大学 | Design method for adaptive elastic hinge capable of suppressing deflection angle |
| CN107247160A (en) * | 2017-06-30 | 2017-10-13 | 中国计量大学 | A kind of microlens based on atomic force probe and sample stage locking system |
| CN107247160B (en) * | 2017-06-30 | 2024-04-19 | 中国计量大学 | Atomic force probe-based locking system for microscope lens and sample stage |
| CN114634154A (en) * | 2022-02-25 | 2022-06-17 | 武汉大学 | AFM-based ten-nanometer multi-energy field processing device and processing method |
| CN114634154B (en) * | 2022-02-25 | 2023-11-17 | 武汉大学 | Ten-nanometer multi-energy field machining device and machining method based on AFM |
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