CN1014082B - Glow discharge decomposing device - Google Patents
Glow discharge decomposing deviceInfo
- Publication number
- CN1014082B CN1014082B CN 85104968 CN85104968A CN1014082B CN 1014082 B CN1014082 B CN 1014082B CN 85104968 CN85104968 CN 85104968 CN 85104968 A CN85104968 A CN 85104968A CN 1014082 B CN1014082 B CN 1014082B
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- CN
- China
- Prior art keywords
- radio
- frequency
- electrode
- substrate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09C—RECLAMATION OF CONTAMINATED SOIL
- B09C1/00—Reclamation of contaminated soil
- B09C1/02—Extraction using liquids, e.g. washing, leaching, flotation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Soil Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a glow discharge decomposing device of a control circuit with at least one electric device and a matching circuit, which is provided with grounding electrodes, basal pieces, RF electrodes and an RF power supply. The basal pieces are all arranged on the grounding electrodes arranged on each RF electrode in parallel and the RF electrodes are arranged in parallel and are insulated each other. The matching circuit receives RF energy from the RF power supply. The control circuit receives the RF energy from the matching circuit and provides the RF energy for the RF electrodes. Films are made on the basal pieces by providing RF power controlled by the control circuit independently, and thus, plasma is controlled on each electrode.
Description
The present invention relates to a kind of glow discharge decomposing device and be used in the preparation of a kind of semiconductor film in this glow discharge decomposing device.
In a kind of traditional glow discharge decomposing device, on the ground-electrode of label 3 expressions, a substrate 4 is set flatly, wherein, and radio frequency (RF) electrode 1, well heater 5, and miscellaneous part all is provided with in mode shown in Figure 1.Air inlet port of label 10 expressions, gas therefrom enters in the chamber.Aspirating hole of label 11 expressions, by this aspirating hole, available vacuum fan is extracted gas out.In such device, can be deposited to a kind of semiconductor film in large area on the substrate, still,, can produce additional discharge at the back side of radio-frequency electrode.For fear of this discharge overleaf, must be provided with one and hide screen 7, but such screening screen can cause instable glow discharge as shown in Figure 1.
Device shown in Figure 2 is used for carrying out two-sided deposit, and it does not need to hide screen.In this device, on ground- electrode 31 and 32, vertically be provided with substrate 41 and 42, be in the centre of these ground-electrodes by label 1 represented radio-frequency electrode.Glow discharge all takes place in the both sides in radio-frequency electrode (the following RF electrode that also is referred to as) 1.If necessary, available well heater 51 and 52 pairs of substrates 41 and 42 heat.In such device,, 9 and matching circuits 8 of 1, one radio-frequency power supply of a RF electrode (the following RF power supply that also is referred to as) can only be set also although be provided with two substrates.Yet this device has shown certain defective.Wherein, when requiring both sides to have the deposition rate that differs bigger each other, can't independently control on-chip deposition rate.
For the power that is added on each RF electrode is controlled, can design device as shown in Figure 3, in this device, be provided with two substrates at the middle part in chamber, two RF electrodes 11 and 12 are respectively facing to them, and be provided with two independently RF power supplys 91 and 92, and matching circuit 81 and 82.By each electric output power is regulated, realized control respectively, thereby realized control deposition rate to discharge.Yet, providing to each electrode between the RF power supply of radio-frequency (RF) energy; May occur disturbing.In addition owing to need two RF power supplys and two matching circuits, therefore, above disclosed device be very complicated, thereby need too high expense, and be subjected to some restriction.
One object of the present invention, to provide a kind of glow discharge decomposing device exactly, this glow discharge decomposing device has a RF power supply and a matching circuit, by the radio frequency power that is added on each electrode is controlled respectively, this glow discharge decomposing device can provide different or identical deposition rate on each substrate.
The solution of the problems referred to above, be by a kind of glow discharge decomposing device is provided, this glow discharge decomposing device comprises: a radio-frequency power supply, a matching circuit 8, and by two ground- electrodes 31,32, two radio- frequency electrodes 11,12 and contain the unit that pilot circuit constituted of an electric device at least, ground- electrode 31,32 with radio- frequency electrode 11,12 are oppositely arranged, substrate 41,42 are set at ground-electrode 31, on 32 and relative with described radio-frequency electrode, described two radio- frequency electrodes 11 and 12 are parallel to each other, matched electrodes 8 links with radio-frequency power supply 9, and pilot circuit is accepted radio-frequency (RF) energy and by its output terminal radio-frequency (RF) energy flowed to radio-frequency electrode from matching circuit 8.
By controlling the plasma body on each RF electrode, can in this glow discharge decomposing device, on each substrate,, carry out thin-film deposition with similar and different speed.This control is undertaken by regulating pilot circuit.This pilot circuit provides radio-frequency (RF) energy to each RF electrode.
Adopt glow discharge decomposing device of the present invention, can be by a RF power supply, a matching circuit and a pilot circuit with similar and different speed, carry out thin-film deposition on each substrate.
Fig. 1 is the synoptic diagram of horizontally disposed glow discharge decomposing device, and this glow discharge decomposing device is used for the single face deposit;
Fig. 2 is the synoptic diagram of traditional double-basis sheet type glow discharge decomposing device, and this device is used to carry out two-sided deposit;
Fig. 3 is the synoptic diagram that comprises the glow discharge decomposing device of two independent radio frequency systems;
Fig. 4 is the synoptic diagram of a kind of embodiment of glow discharge decomposing device of the present invention;
Fig. 5,6,7 and 8 is respectively the synoptic diagram of pilot circuit;
Fig. 9 is the synoptic diagram of the electric device of radio frequency conductive plate;
Figure 10 is the synoptic diagram of matching circuit;
Figure 11 and 12 is the explanatory views that comprise the device setting of many cover RF electrodes, substrate and well heater.
In conjunction with Fig. 4 device of the present invention is described now.In Fig. 4, label 11 and 12 represented RF electrodes are arranged in parallel, and by shackle 2 and insulated from each other.The pilot circuit that comprises variable capacity 61 and natural capacitance 62 links to each other with 12 with RF electrode 11 outside reaction chamber.RF power supply 9 produces radio-frequency (RF) energy, and this radio-frequency (RF) energy is divided into two parts by matching circuit 8, thereby the radio-frequency (RF) energy after will decomposing is added to respectively on RF electrode 11 and 12.Above RF electrode 11 and 12, be provided with ground- electrode 31 and 32 abreast with these RF electrodes.Substrate 41 and 42 is separately positioned on ground-electrode 31 and 32.Well heater by label 51 and 52 expressions can be used to substrate 41 and 42 is heated.With regard to RF electrode 11 and 12, shackle 2 can replace with miscellaneous part, as long as these parts can be fixed the insulated from each other of these electrodes.
In the middle of embodiment shown in Figure 4,, deposition rate has been carried out control respectively by regulating the electric capacity that links to each other with the RF electrode respectively.
As an example, the method of control capacittance can be, after the test deposit, check the method for film thickness, detect the method for glow discharge intensity with range estimation, detect method of glow discharge intensity or the like with light ES emission spectroscopy (Optical Emission Spectroscopy is called for short OES).Under in the end a kind of situation, adjusting is undertaken by manual operation or automatic operation.Automatically red-tape operati is to be undertaken by the robot apparatus that combines with detector and servomotor.In these methods, taking robot apparatus to regulate is the most desirable method.
Pilot circuit comprises electric device, as the series capacity among Fig. 4, and with the series connection of RF electrode, or a pair of electric capacity or the inductance of ground connection in parallel.Fig. 5,6,7 and 8 is explanatory views that these circuit are connected.Can also design other electric device combination.For example, have only an element to be connected on the RF electrode, another RF electrode is then directly received on the branch road of matching circuit.
In a word, can regulate, from the radio frequency power of matching circuit, and these radio-frequency (RF) energy are added on the RF electrode with control to the pilot circuit that comprises electric device.
As an example, the inducer among the present invention can be helical figure, or the radio frequency conductive plate, and this radio frequency conductive plate has and the corresponding inductance of its institute's shape of getting.What Fig. 9 showed is latter event, and wherein inducer is a pair of radio frequency conduction steel disk.According to the shape and the length of dish, its inductance value can change within the specific limits.
When electric capacity or inductance are regulated, so that plasma intensity changes or when equating, the electric parameter of entire circuit also changes.Therefore, must under employed radio frequency power condition matching circuit be regulated once more, in most of the cases, matching circuit includes variable capacity.Figure 10 has shown a kind of explanatory view of typical matching circuit.
Although the explanation of being done can also be carried out such definition to " matching circuit ", thereby makes it both to comprise above-mentioned matching circuit, comprise above-mentioned pilot circuit again in the disclosure.
To being subjected to the distance between shackle 2 insulating RF electrodes 11 and 12, suitably select, to make it to reach optimization.For example, in normal circumstances, it can be selected between 1 to 200 millimeter (mm).Consider that from the stability and the inhomogeneity angle of plasma body the distance between the RF electrode same substrate can be taken as 5 to 50 millimeters (mm), preferably between 10 to 30 millimeters (mm).
The area of RF electrode preferably is not more than 1 square metre of (m
2).When needs more during big area, can adopt a plurality of RF electrodes, the area of each of these electrodes all is limited in 1 square metre of (m
2) within.In Figure 11, demonstrated this RF electrode device.Utilize such device can carry out large-area deposit, wherein each RF electrode all is placed in-line on circuit.As pointed in the description of front, in the parallel disc type electrode that the mode shown with Fig. 1 to 12 settled, the area of each RF electrode all is limited in 1 square metre of (m
2) within.
This device can comprise substrate carrier, after this substrate carrier is used for before deposit or among carrying out, carries out transporting of substrate, and substrate can transport with the right side to a certain extent or left, and keeps certain distance with the RF electrode.In this moving process, substrate naturally should be abreast towards the RF electrode.In addition, substrate can move along a direction, and keeps certain distance with the RF electrode, and the example of this embodiment is exactly a kind of multi-cavity deposition apparatus, wherein the substrate in the chamber is transported in another chamber.When will be on one section very long continuous substrate sheet (this long continuous substrate sheet just moves into another chamber from a chamber) continuously during deposition film, this be the most desirable along transporting of a direction.
In order to obtain the thickness of uniform film, best bet is with the substrate move left and right, as described above.RF electrode and substrate can be vertical, level or be provided with obliquely, as long as they are in parastate each other.Yet, adopt vertically to be provided with and can deposit to go out fine quality film, because can preventing dust, vertical setting falls on the substrate.
If necessary, can heat substrate with well heater.The selection of substrate temperature is the composition according to film, or the application target of the film that goes out of deposit carries out.Under common condition, its temperature is preferably between 50 ° to 400 °.
As mentioned above, the device among the present invention is made up of RF electrode, substrate and well heater.In such device, the RF electrode, substrate and well heater have constituted the basic device of deposit.Device of the present invention can have this basic device of many covers, as shown in figure 12.The tricks of these basic devices can be 1 to 100, in the present invention, and preferably 1 to 10.
Utilizing glow discharge plasma to carry out in the device of thin-film deposition, can adopt the device of any pattern, yet, when adopting the multi-cavity device, can adopt technology of the present invention to prepare film in each chamber, wherein deposit goes out semi-conductive P, i and n type layer continuously.In this embodiment, the multi-cavity device has slit or gate valve on the partition wall that each chamber is separated, so that substrate is sent in the adjacent chamber.Can take out the gas in the chamber with differential vacuum fan (differential evacuator).This differential vacuum fan can turn to the process in next chamber withdrawing gas continuously from a chamber at substrate.If in this multi-cavity device, be provided with differential vacuum fan, just can under the situation that need not open or close gate valve, substrate be moved on to another chamber from a chamber continuously.This function of multi-cavity device makes manufacturability obtain increase.
It is as follows to adopt device of the present invention to prepare the method for amorphous semiconductor films: in the atmosphere surrounding of the rare gas element, impurity gas, silicide, carbonate and the nitride that include 1.33 to 665 handkerchiefs (Pa), with the rf frequency of 1 to 100 megahertz (MHz), be 0.003 to 0.2 watt of/centimetre (W/cm in the radio frequency power density of depositing region
2) (when the needs microcrystalline film, power is 0.1 to 5W/cm
2) condition under, carry out glow discharge, and deposit goes out the film of 0.005 to 100 micron (μ m) on substrate.
Adopt this technology of the present invention, can on large-area substrate, carry out unanimity and deposit uniformly.In addition, because the stability of glow discharge plasma in this device, thereby avoided additional discharge, thus make radio-frequency (RF) energy obtain effective utilization.
In of the present invention the setting, the utilization of radio-frequency (RF) energy has been obtained sufficient improvement.According to setting of the present invention, can produce the film of multiple electric device, these electric devices such as solar cell, P-i-n diode, P-n diode, transmitter, thin film transistor (TFT) and charge-coupled device (CCD) with heterojunction or homojunction.The sensitization film that is used for electronic photography be can also make, the LSI passive film, the barrier film of printed wiring or other products are used for.Especially, because the stability of this device ionic medium body, thereby adopt technology of the present invention, and can on big area, prepare and provide high efficiency non-crystal silicon solar cell recklessly, the efficient of this non-crystal silicon solar cell is greater than 10%.
Below, to being described according to example of the present invention.
Should be understood that the present invention is not limited by example, and under the prerequisite that does not depart from the scope of the present invention with spirit, can be out of shape and revise the present invention.
Example 1
Utilize glow discharge decomposing device shown in Figure 4 to prepare film.
Utilize 4 millimeters shackles that (mm) is thick, to RF electrode (500mm * 560mm) insulate.By matching circuit, radio-frequency (RF) energy is added on the electrical condenser.Rf frequency is 13.56 megahertzes (MHz), and the electric capacity of fixed condenser is 250PF, and the electric capacity of variable condenser is the 500PF(maximum value).At 40 square centimeters of (cm
2) transparent ITO/SnO
2Prepared a P-i-n semiconductor film on the-glass substrate.The temperature of this substrate is 200 ℃.
At first, at the B that includes 0.05% molconcentration
2H
6CH
4(50% molconcentration) and SiH
4Under the mixed gas of (50% molconcentration), deposit go out 100 dusts (
) P type layer.Subsequently, deposit go out 6000 dusts (
) i type layer, last, at the PH that comprises 0.2% molconcentration
3Mixed gas under, deposit go out 500 dusts (
) n type layer, electric capacity fixing and variable condenser is respectively 250 and 350PF.
In the above, utilize electron beam emission deposit go out a layer thickness be 1000 dusts (
) aluminium, as back electrode (baching electrocle).Utilize 100mW/cm
2Solar simulator, the efficiency of conversion of the solar cell made of aforesaid method is measured respectively.Its efficiency of conversion average out to 11% is up to 11.7%, and minimum is 10.4%.Deposition rate be per second 10 dusts (
).The thickness of resulting film is the same on two substrates.
Example 2
The method for preparing film is identical with example 1, but the electric capacity of variable condenser changes from 10 to 500PF.Be displayed in Table 1 the deposition rate of preparation at two on-chip resulting films.
Table 1
The electric capacity of variable condenser (PF)
Deposition rate (be A/sec dust/second)
Towards with fixed condenser towards linking to each other with variable condenser
The RF electrode that links to each other RF electrode on-chip
On-chip deposit deposit
10 4.6 1.5
100 3.7 2.6
350 3.1 3.15
500 2.2 4.0
Claims (10)
1, the device that decomposes deposit film on substrate by glow discharge, it comprises: a radio-frequency power supply 9, a matching circuit 8, and by two ground-electrodes 31,32, two radio-frequency electrodes 11,12 and contain the unit that pilot circuit constituted of an electric device at least, ground-electrode 31,32 with radio-frequency electrode 11,12 are oppositely arranged, substrate 41,42 are set at ground-electrode 31, on 32 and relative with described radio-frequency electrode, described two radio-frequency electrodes 11 and 12 are parallel to each other, matching circuit 8 links with radio-frequency power supply 9, and pilot circuit is accepted radio-frequency (RF) energy and by its output terminal radio-frequency (RF) energy flowed to radio-frequency electrode from matching circuit 8.
2, the device of claim 1, wherein pilot circuit comprises a natural capacitance and a variable capacity.
3, the device of claim 1, wherein pilot circuit comprises a fixed inductance and a variable inductance.
4, the device of claim 1, wherein this device comprises the described unit of 1 to 100 cover.
5, the device of claim 1, wherein the frequency of radio-frequency (RF) energy is 1 to 100 megahertz (MHz).
6, the device of claim 1 wherein is provided with the well heater that is used for heated substrate.
7, the device of claim 2, wherein electrical condenser is connected in series with radio-frequency electrode.
8, the device of claim 2, wherein electrical condenser ground connection in parallel.
9, the device of claim 3, wherein inducer is connected in series with radio-frequency electrode.
10, the device of claim 3, wherein inducer ground connection in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 85104968 CN1014082B (en) | 1984-06-22 | 1985-06-29 | Glow discharge decomposing device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59129519A JPH0719750B2 (en) | 1984-06-22 | 1984-06-22 | Glo-discharge type film forming device |
| CN 85104968 CN1014082B (en) | 1984-06-22 | 1985-06-29 | Glow discharge decomposing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN85104968A CN85104968A (en) | 1987-01-07 |
| CN1014082B true CN1014082B (en) | 1991-09-25 |
Family
ID=15011505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 85104968 Expired CN1014082B (en) | 1984-06-22 | 1985-06-29 | Glow discharge decomposing device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0719750B2 (en) |
| CN (1) | CN1014082B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6329927U (en) * | 1986-08-09 | 1988-02-27 | ||
| WO2002051707A1 (en) * | 2000-12-25 | 2002-07-04 | Mitsubishi Shoji Plastics Corporation | Production device for dlc film-coated plastic container and production method therefor |
| JP5135720B2 (en) * | 2006-06-09 | 2013-02-06 | 富士電機株式会社 | Plasma processing equipment |
| CN101609858B (en) * | 2008-06-20 | 2011-06-22 | 福建钧石能源有限公司 | Film deposition method |
| EP2145701A1 (en) * | 2008-07-16 | 2010-01-20 | AGC Flat Glass Europe SA | Method and installation for surface preparation by dielectric barrier discharge |
| JPWO2010055669A1 (en) * | 2008-11-12 | 2012-04-12 | 株式会社アルバック | Electrode circuit, film forming apparatus, electrode unit, and film forming method |
| CN112080728B (en) * | 2020-08-12 | 2022-05-10 | 北京航空航天大学 | HiPIMS system and method for reducing HiPIMS discharge current delay |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5848416A (en) * | 1981-09-16 | 1983-03-22 | Fuji Electric Corp Res & Dev Ltd | Mass production type thin film forming device |
| JPS6044970B2 (en) * | 1982-03-25 | 1985-10-07 | 株式会社 半導体エネルギ−研究所 | Plasma reaction equipment |
| JPS5914633A (en) * | 1982-07-16 | 1984-01-25 | Anelva Corp | Plasma cvd apparatus |
-
1984
- 1984-06-22 JP JP59129519A patent/JPH0719750B2/en not_active Expired - Lifetime
-
1985
- 1985-06-29 CN CN 85104968 patent/CN1014082B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN85104968A (en) | 1987-01-07 |
| JPH0719750B2 (en) | 1995-03-06 |
| JPS618914A (en) | 1986-01-16 |
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