CN101399511A - Control construction for suppressing motor reaction electromotive by using loop back technology - Google Patents

Control construction for suppressing motor reaction electromotive by using loop back technology Download PDF

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Publication number
CN101399511A
CN101399511A CNA2007101520499A CN200710152049A CN101399511A CN 101399511 A CN101399511 A CN 101399511A CN A2007101520499 A CNA2007101520499 A CN A2007101520499A CN 200710152049 A CN200710152049 A CN 200710152049A CN 101399511 A CN101399511 A CN 101399511A
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CN
China
Prior art keywords
electric crystal
electromotive force
mos electric
reaction electromotive
mos
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CNA2007101520499A
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CN101399511B (en
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林招庆
祝林
林有康
曹正中
沈宗毅
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SHENGDA SCIENCE AND TECHNOLOGY Co Ltd
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SHENGDA SCIENCE AND TECHNOLOGY Co Ltd
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Abstract

The invention relates to a control structure which uses the loop technology to inhibit the reaction electromotive force of a motor. The control structure as least comprises a control unit, a level inhibition mechanism unit, a bridge type drive circuit, and a motor coil. When a motor end switches, the motor coil generates the reaction electromotive force which is 2-3 times higher than the input voltage because of charging and discharging. By using the level inhibition mechanism unit, a looping is formed between two P MOS transistors in the bridge type drive circuit. An electric current generated by the reaction electromotive force is consumed in the looping so as to achieve the purpose of inhibiting the reaction electromotive force of the motor.

Description

Utilize loop back technology to suppress the control structure of motor reaction electromotive force
Technical field
The invention relates to a kind of " utilizing loop back technology to suppress the control structure of motor reaction electromotive force ", is a kind ofly oppositely to send the DYN dynamic inhibition structure of the reaction that is produced behind the coil energy accumulation when being used to improve motor driven.
Background technology
The circuit framework that general prior art is the brushless fan is to utilize bridge drive circuit, wherein there are four field effect electric crystals (Field Effect Transistor) to be called for short FET, two P channelMOSFET field effect electric crystals (hereinafter to be referred as P MOS electric crystal) are arranged in four, motor driven is finished in two N channel MOSFET fields effect electric crystal (hereinafter to be referred as N MOS electric crystal), the reaction electrodynamic type surging that is produced during motor driven is 2~3 times of input power supplys, present way absorbs surging for utilizing a large-scale capacitor device or Zener diode (Zener Diode) or TVS part, it can produce a large amount of power consumptions and easily cause element over-temperature and damage at the element of absorptive unit, very the person more may cause fan to turn round.
Seeing also Fig. 1, to cooperate Fig. 2 be the square and the circuit diagram of prior art, and it comprises a control unit 10, a bridge drive circuit 11, a motor coil 13 and absorptive unit 12.
The circuit framework of brushless fan is to utilize bridge drive circuit (including two P MOS and two NMOS electric crystals) to finish motor driven, the 2nd P MOS electric crystal 112 and the 3rd N MOS electric crystal 113 conductings (the conducting sense of current 15 as shown in Figure 2) during motor driven, motor coil is filled after the electric current, after the power supply outage, motor coil oppositely sends the reaction electromotive force (reaction electromotive force direction 140 as shown in Figure 2) that is produced to energy stored, is directed at absorptive unit 12 by large-scale capacitor device 122 and Zener diode 121 (Zener Diode) or TVS part (figure does not show) absorption.
Surging is input 2~3 times of power supplys (as shown in Figure 2), will react the electromotive force surging to this this moment eliminates, avoid damaging circuit, present way absorbs surging for utilizing a large-scale capacitor device or Zener diode (Zener Diode) or TVS part, it can produce a large amount of power consumptions at the element that absorbs the surging end and easily cause element over-temperature and damage, and very the person more may cause fan to turn round.
According to the above, prior art has following some problem:
1, need add expensive TVS surging and absorb part, increase production cost.
2, need add short large-scale capacitor type element of easy heating and life-span, cause the design stability degree not good.
3, need add the elements such as Zener diode of easy generation noise, cause noise.
Therefore, be necessary to be improved at above-mentioned prior art problems.
Summary of the invention
Therefore, for solving above-mentioned prior art problems, main purpose of the present invention, being to provide surely, inhibition mechanism unit in position is to start when motor coil produces reverse reaction electromotive force, make a PMOS electric crystal conducting, and form a loop between a P MOS electric crystal and the 2nd P MOS electric crystal, with electric current loop consumption in this loop that order reaction electromotive force produces, reach the purpose of utilizing loop back technology to suppress the motor reaction electromotive force.
Main purpose of the present invention is to utilize existing element in the bridge drive circuit, finishes the purpose that surging absorbs, and the absorptive unit (large-scale capacitor device or TSV part or Zener diode) that need not add prior art absorbs surging, to reduce cost.
Secondary objective of the present invention is to utilize existing element in the bridge drive circuit, finishes the purpose that surging absorbs, and need not add the heater element of this class of large-scale capacitor device, makes the stability of circuit better.
Another secondary objective of the present invention is to utilize existing element in the bridge drive circuit, finishes the purpose that surging absorbs, and need not add the Zener diode and absorb surging, effectively reduces noise.
Compared with prior art, the present invention has the following advantages:
According to the above, the accurate position of inhibition of the present invention mechanism unit directly utilizes existing element, and the accurate position of gate of design control PMOS electric crystal is set, and constitutes P MOS electric crystal turn-on condition, do not need to add expensive TVS part and absorb surging, the advantage that reduces production costs is arranged as prior art.
Do not need as described above to add easy heating and short large-scale capacitor device of life-span, the advantage of the stabilization that promotes circuit is arranged as prior art.
Do not need as described above to add the element that is easy to generate noise as the Zener diode, effectively reduce the advantage of noise as prior art.
Description of drawings
Fig. 1 is existing circuit box schematic diagram;
Fig. 2 is existing circuit diagram;
Fig. 3 is the surging curve synoptic diagram of reaction electromotive force;
Fig. 4 is a circuit box schematic diagram of the present invention;
Fig. 5 is that the embodiment of the present invention when low voltage application suppresses loop circuit diagram clockwise;
Fig. 6 is that the embodiment of the present invention when low voltage application suppresses the anti-clockwise circuit diagram of loop;
Fig. 7 is that the embodiment of the present invention when high voltage applications suppresses loop circuit diagram clockwise;
Fig. 8 is that the embodiment of the present invention when high voltage applications suppresses the anti-clockwise circuit diagram of loop;
Fig. 9 consumes remaining reaction electromotive force surging curve synoptic diagram in loop.
[figure number explanation]
10 control units
11 bridge drive circuits
12 absorptive units
13 motor coils
20 control units
21 suppress accurate position mechanism unit
22 bridge drive circuits
23 motor coils
The 25 conducting senses of current
201 first pin positions
202 crus secunda positions
203 tripod positions
204 the 4th pin positions
206 first electric capacity
207 second electric capacity
208 the 5th resistance
209 first electric crystals
211 first diodes
212 second diodes
214 first resistance
215 second resistance
216 the 3rd resistance
217 the 4th resistance
218 node Va
219 node Vb
221 the one P MOS electric crystals
222 the 2nd P MOS electric crystals
223 the 3rd N MOS electric crystals
224 the 4th N MOS electric crystals
240 reaction electromotive force electric current first directions
241 reaction electromotive force
2010 the 6th resistance
2,011 second electric crystals
2110 node Vc
2111 node Vd
Embodiment
For other advantages of the present invention, purpose, technical characterictic and effect,, the specific embodiment of the present invention is described in further detail below in conjunction with drawings and Examples:
Preferred embodiment of the present invention is shown in Fig. 5,6,7 and 8, because of the difference use needs to cooperate the different designs circuit, so the application circuit (Fig. 5,6) when the actual utilization of industry is divided at low input reaches the application circuit (Fig. 7,8) when high input voltage.
Fig. 4, Fig. 5 are square of the present invention and circuit diagram, show the application circuit of the present invention's a kind of " utilizing loop back technology to suppress the control structure of motor reaction electromotive force " when low input, causing because of low-voltage input is unexpected that electric current is excessive damages, so first diode and the merging of second diode that will suppress in the mechanism unit 21 of accurate position design in an integrated circuit.
Mainly include: a control unit 20, suppresses accurate position mechanism unit 21, a bridge drive circuit 22, a motor coil 23; Aforementioned control unit 20 is an integrated circuit, and it has at least four pin positions to control four field effect electric crystals in the bridge drive circuit 22 respectively, by four field effect electric crystals in this bridge drive circuit 22, comes the switching with control motor coil 23.
20 at least four pin positions of aforementioned this control unit are to control this bridge drive circuit 22, and the P MOS electric crystal 221 in this bridge drive circuit 22 is controlled through first control assembly (first resistance 214, second resistance 215 and first electric capacity 206) in its first pin position 201; The 2nd P MOS electric crystal 222 in this bridge drive circuit 22 is controlled through second control assembly (the 3rd resistance 216, the 4th resistance 217 and second electric capacity 207) in this crus secunda position 202; This tripod position 203 and the 4th pin position 204 are controlled the 3rd N MOS electric crystal 223 and the 4th N MOS electric crystal 224 in this bridge drive circuit 22 respectively.
Operating principle is as described below, when the motor starting, crus secunda position 202 and tripod position 203 in the control unit 20, control the 2nd P MOS electric crystal 222 and the 3rd N MOS electric crystal conducting 223 (conducting electric current 25 as shown in Figure 5) in this bridge drive circuit 22, this moment, motor coil 23 was because of filling, one 2~3 times of discharge generation are to a reaction electromotive force of input voltage, this reaction electromotive force is directed at first quarter point Va 218 to one node Vb 219 (reaction electromotive force electric current first direction 240 as shown in Figure 5) by the diode in the P MOS electric crystal 221, and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment, suppress accurate position mechanism unit 21 (first diode 211, first resistance 214 and second resistance 215 are formed, the element master is the voltage of design control P MOS electric crystal gate, its function of any equivalent-circuit component is similar all within the scope of the present invention, not as limit) the control gate (g) of the one P MOS electric crystal 221 and the voltage between the source electrode (s) is greater than the conducting voltage of its electric crystal (Vemf-Vb[R1/ (R1+R2)]〉Vgs (on)), constitutes the condition of a P MOS electric crystal 221 conductings; Electromotive force is directed at first quarter point Vc 2110 to one node Vd 2111 by the diode in the P MOS electric crystal 221 and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment when reacting simultaneously, suppress the gate (g) of accurate position mechanism unit 21 (second diode 212, the 3rd resistance 216 and the 4th resistance 217) control the 2nd P MOS electric crystal 222 and the voltage between the source electrode (s) greater than the conducting voltage of its electric crystal (Vemf-Vb[R3/ (R3+R4)]〉Vgs (on)), constitute the condition of the 2nd P MOS electric crystal 222 conductings.
Then form a loop after a P MOS electric crystal 221 conductings and between the 2nd P MOS electric crystal 222, with 241 (as shown in Figure 5) of order reaction electromotive force current trend second direction, in this loop, consume in the loop clockwise, until motor switching next time, the one P MOS electric crystal 221 and the 4th NMOS electric crystal 224 conductings (the conducting sense of current 25 is as shown in Figure 6), will be in this loop loop consume remaining reaction electromotive force 241 (as shown in Figure 9) and be directed at ground connection.
See also Fig. 6, aforementioned motor switches next action, first pin position 201 in the control unit 20 and the 4th pin position 204, control a P MOS electric crystal 221 and the 4th NMOS electric crystal conducting 224 (conducting electric current 25 as shown in Figure 6) in this bridge drive circuit 22, this moment, motor coil 23 was because of filling, one 2~3 times of discharge generation are to a reaction electromotive force of input voltage, this reaction electromotive force is directed at first quarter point Vc 2110 to one node Vd 2111 (reaction electromotive force electric current first direction 240 as shown in Figure 6) by the diode in the 2nd P MOS electric crystal 222, and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment, suppress accurate position mechanism unit 21 (second diode 212, the 3rd resistance 216 and the 4th resistance 217) the control gate (g) of the 2nd P MOS electric crystal 222 and the voltage between the source electrode (s) is greater than the conducting voltage of its electric crystal (Vemf-Vd[R3/ (R3+R4)]〉Vgs (on)), constitutes the condition of the 2nd P MOS electric crystal 222 conductings; Electromotive force is directed at first quarter point Va 218 to one node Vb 219 by the diode in the 2nd P MOS electric crystal 222 and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment when reacting simultaneously, suppress the gate (g) of accurate position mechanism unit 21 (first diode 211, first resistance 214 and second resistance 215) control the one P MOS electric crystal 221 and the voltage between the source electrode (s) greater than the conducting voltage of its electric crystal (Vemf-Vb[R1/ (R1+R2)]〉Vgs (on)), constitute the condition of a P MOS electric crystal 221 conductings.
Then form a loop after 222 conductings of the 2nd P MOS electric crystal and between the P MOS electric crystal 221, with 241 (as shown in Figure 6) of order reaction electromotive force current trend second direction, in this loop, consume in the counterclockwise loop, until motor switching next time, the 2nd P MOS electric crystal 222 and the 3rd NMOS electric crystal 223 conductings (the conducting sense of current 25 is as shown in Figure 5), will be in this loop loop consume remaining reaction electromotive force 241 (as shown in Figure 9) and be directed at ground connection.
Aforementioned two-step action goes round and begins again repeatedly, reaches clockwise loop repeatedly in order to control reaction electromotive force inverse clock in this design loop, reaches the order ground that suppresses the motor reaction electromotive force.
Seeing also the 4th and 7 figure is square and the circuit diagram of the present invention when high voltage applications.
Because of high voltage input has the excessive anxiety of damaging of electric current, separate integrated circuit with second diode 212 and design in circuit so will suppress first diode 211 in the standard mechanism unit 21.
Mainly include: a control unit 20, suppresses accurate position mechanism unit 21, a bridge drive circuit 22, a motor coil 23; Aforementioned control unit 20 is an integrated circuit, and it has at least four pin positions to control four field effect electric crystals in the bridge drive circuit 22 respectively, by four field effect electric crystals in this bridge drive circuit 22, controls the switching of motor coil 23.
20 at least four pin positions of aforementioned this control unit are to control this bridge drive circuit 22, and the P MOS electric crystal 221 in this bridge drive circuit 22 is controlled through first control assembly (first resistance 214, the 5th resistance 208 first electric capacity 206 and first electric crystal 209) in its first pin position 201; The 2nd P MOS electric crystal 222 in this bridge drive circuit 22 is controlled through second control assembly (the 4th resistance 217, the 6th resistance 2010, second electric capacity 207 and second electric crystal 2011) in this crus secunda position 202; This tripod position 203 and the 4th pin position 204 are controlled the 3rd N MOS electric crystal 223 and the 4th NMOS electric crystal 224 in this bridge drive circuit 22 respectively.
Operating principle is as described below, when the motor starting, crus secunda position 202 and tripod position 203 in the control unit 20, control the 2nd P MOS electric crystal 222 and the 3rd N MOS electric crystal 223 conductings (conducting electric current 25 as shown in Figure 7) in this bridge drive circuit 22, this moment, motor coil 23 was because of filling, one 2~3 times of discharge generation are to a reaction electromotive force of input voltage, this reaction electromotive force is directed at first quarter point Va 218 to one node Vb 219 (reaction electromotive force electric current first direction 240 as shown in Figure 7) by the diode in the P MOS electric crystal 221, and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment, suppress accurate position mechanism unit (first diode 211, first resistance 214 and second resistance 215) the control gate (g) of the one PMOS electric crystal 221 and the voltage between the source electrode (s) is greater than the conducting voltage of its P MOS electric crystal (Vemf-Vb[R1/ (R1+R2)]〉Vgs (on)), constitutes the condition of a P MOS electric crystal 221 conductings; Electromotive force is directed at first quarter point Vc 2110 to one node Vd 2111 by the diode in the P MOS electric crystal 221 and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment when reacting simultaneously, suppress the gate (g) of accurate position mechanism unit 21 (second diode 212, the 3rd resistance 216 and the 4th resistance 217) control the 2nd P MOS electric crystal 222 and the voltage between the source electrode (s) greater than the conducting voltage of its electric crystal (Vemf-Vb[R3/ (R3+R4)]〉Vgs (on)), constitute the condition of the 2nd P MOS electric crystal 222 conductings.
Then form a loop after a P MOS electric crystal 221 conductings and between the 2nd P MOS electric crystal 222, with order reaction electromotive force current trend second direction 241, in this loop, consume in the loop clockwise, until motor switching next time, the one P MOS electric crystal 221 and the 4th N MOS electric crystal 224 conductings (the conducting sense of current 25 is as shown in Figure 8), will be in this loop loop consume remaining reaction electromotive force 241 (as shown in Figure 9) and be directed at ground connection.
See also Fig. 8, aforementioned motor switches next action, first pin position 201 in the control unit 20 and the 4th pin position 204, control a P MOS electric crystal 221 and the 4th NMOS electric crystal conducting 224 (conducting electric current 25 as shown in Figure 8) in this bridge drive circuit 22, this moment, motor coil 23 was because of filling, one 2~3 times of discharge generation are to a reaction electromotive force of input voltage, this reaction electromotive force is directed at first quarter point Vc 2110 to one node Vd 2111 (reaction electromotive force electric current first direction 240 as shown in Figure 6) by the diode in the 2nd P MOS electric crystal 222, and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment, suppress accurate position mechanism unit 21 (second diode 212, the 4th resistance 216 and the 3rd resistance 217) the control gate (g) of the 2nd P MOS electric crystal 222 and the voltage between the source electrode (s) is greater than the conducting voltage of its electric crystal (Vemf-Vd[R3/ (R3+R4)]〉Vgs (on)), constitutes the condition of the 2nd P MOS electric crystal 222 conductings; Electromotive force is directed at first quarter point Va 218 to one node Vb 219 by the diode in the 2nd P MOS electric crystal 222 and react electromotive force voltage (Vemf) greater than input voltage (Vss) this moment when reacting simultaneously, suppress the gate (g) of accurate position mechanism unit 21 (second diode 212, first resistance 214 and second resistance 215) control the one P MOS electric crystal 221 and the voltage between the source electrode (s) greater than the conducting voltage of its electric crystal (Vemf-Vb[R1/ (R1+R2)]〉Vgs (on)), constitute the condition of a P MOS electric crystal 221 conductings.
Then form a loop after 222 conductings of the 2nd P MOS electric crystal and between the P MOS electric crystal 221, with 241 (as shown in Figure 6) of order reaction electromotive force current trend second direction, the counterclockwise loop consumes in this loop, until motor switching next time, the 2nd P MOS electric crystal 222 and the 3rd N MOS electric crystal 223 conductings (the conducting sense of current 25 is as shown in Figure 7), will be in this loop loop consume remaining reaction electromotive force 241 (as shown in Figure 9) and be directed at ground connection.
Aforementioned two-step action goes round and begins again repeatedly, reaches clockwise loop repeatedly in order to control reaction electromotive force inverse clock in this design loop, reaches the order ground that suppresses the motor reaction electromotive force.
Aforementioned first resistance 214 and second resistance 215 and the 3rd resistance 216 and the 4th resistance 217 that suppresses in the mechanism unit 21 of accurate position, change the dividing potential drop effect that resistance value can obtain different proportion, reach the conducting voltage of different P MOS electric crystals and set and change the effect that suppresses the accurate position of gate.
According to the above, the accurate position of inhibition of the present invention mechanism unit directly utilizes existing element, and the accurate position of gate of design control PMOS electric crystal is set, and constitutes P MOS electric crystal turn-on condition, do not need to add expensive TVS part and absorb surging, the advantage that reduces production costs is arranged as prior art.
Do not need as described above to add as easy heating of large-scale capacitor device and life-span weak point, the advantage of the stabilization that promotes circuit is arranged as prior art.
Do not need as described above to add the element that is easy to generate noise as the Zener diode, effectively reduce the advantage of noise as prior art.
More than disclosed only be several specific embodiment of the present invention, still, the present invention is not limited thereto, any those skilled in the art can think variation all should fall into protection scope of the present invention.

Claims (8)

1, a kind of control structure of utilizing loop back technology to suppress the motor reaction electromotive force is characterized in that, mainly includes:
One control unit has at least four control pin positions, and this first pin position is to be electrically connected one to suppress accurate position mechanism unit, controls one the one P MOS electric crystal in the bridge drive circuit;
This crus secunda position is to be electrically connected the accurate position of this inhibition mechanism unit to control one the 2nd P MOS electric crystal in this bridge drive circuit;
This tripod position is one the 3rd N MOS electric crystal that is electrically connected in this bridge drive circuit of control;
The 4th pin position is one the 4th N MOS electric crystal that is electrically connected in this bridge drive circuit of control;
Aforementioned bridge drive circuit is to be electrically connected a motor coil, switches with the control motor-end;
Aforementioned control unit is controlled the 2nd P MOS electric crystal and the 3rd N MOS electric crystal conducting in this bridge drive circuit when motor switches, and then this motor coil produces a reaction electromotive force after the charge and discharge;
This reaction electromotive force upwards is directed at and suppresses accurate position mechanism unit, should suppress the mechanism unit action of accurate position this moment, make a P MOS electric crystal and the 2nd P MOS electric crystal conducting of this bridge drive circuit, make a P MOS and the 2nd P MOS electric crystal form a loop, make the loop consumption clockwise in this loop of reaction electromotive force, a P MOS electric crystal and the 4th N MOS electric crystal conducting of switching until next motor are directed at ground connection with remaining reaction electromotive force;
And control unit is controlled after a P MOS electric crystal and the 4th N MOS electric crystal conducting motor coil and is produced reaction electromotive force this reaction electromotive force and upwards be directed at and suppress accurate position mechanism unit and suppress a standard mechanism unit, should suppress the mechanism unit action of accurate position this moment, make the 2nd P MOS electric crystal and a P MOS electric crystal conducting of this bridge drive circuit, make the 2nd a P MOS and a P MOS electric crystal form a loop, make the counterclockwise loop consumption in this loop of reaction electromotive force, the 2nd P MOS electric crystal and the 3rd N MOS electric crystal conducting of switching until next motor are directed at ground connection with remaining reaction electromotive force, so go round and begin again, reach the order ground that suppresses the motor reaction electromotive force.
2, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 1, it is characterized in that, suppressing accurate position mechanism unit is that one first diode, one first resistance and one second resistance are formed, when the reaction electromotive force oppositely comes, control voltage between a P MOS electric crystal gate and the source electrode greater than the conducting voltage of P MOS electric crystal, make a P MOS electric crystal conducting.
3, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 1, it is characterized in that, suppressing accurate position mechanism unit is that one second diode, one the 3rd resistance and one the 4th resistance are formed, when the reaction electromotive force oppositely comes, control voltage between the 2nd P MOS electric crystal gate and the source electrode greater than the conducting voltage of PMOS electric crystal, make the 2nd PMOS electric crystal conducting.
4, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 1 is characterized in that, first diode and second diode can be integrated in the integrated circuit with control unit in the mechanism unit of the accurate position of aforementioned inhibition.
5, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 1 is characterized in that, first diode and second diode are a circuit structure independently in the accurate mechanism unit of aforementioned inhibitions, can separate with aforementioned integrated circuit.
6, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 2, it is characterized in that, aforementioned first resistance and second resistance that suppresses in the mechanism unit of accurate position, change the dividing potential drop effect that resistance value can obtain different proportion, reach the conducting voltage of different P MOS electric crystals and set and change the effect that suppresses the accurate position of gate.
7, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 3, it is characterized in that, aforementioned the 3rd resistance and the 4th resistance that suppresses in the mechanism unit of accurate position, change the dividing potential drop effect that resistance value can obtain different proportion, reach the conducting voltage of different P MOS electric crystals and set and change the effect that suppresses the accurate position of gate.
8, the control structure of utilizing loop back technology to suppress the motor reaction electromotive force as claimed in claim 1 is characterized in that control unit is an integrated circuit.
CN2007101520499A 2007-09-28 2007-09-28 Control construction for suppressing motor reaction electromotive by using loop back technology Active CN101399511B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018121727A1 (en) * 2016-12-30 2018-07-05 深圳市优必选科技有限公司 Drive control circuit and robot
CN110829951A (en) * 2018-08-14 2020-02-21 建准电机工业股份有限公司 Motor power-off brake system and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05207799A (en) * 1991-11-04 1993-08-13 Xerox Corp Control system of stepping motor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018121727A1 (en) * 2016-12-30 2018-07-05 深圳市优必选科技有限公司 Drive control circuit and robot
CN110829951A (en) * 2018-08-14 2020-02-21 建准电机工业股份有限公司 Motor power-off brake system and method

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