CN101398547B

CN101398547B - Display unit

Info

Publication number: CN101398547B
Application number: CN2008101677413A
Authority: CN
Inventors: 国森隆志; 山崎泰志; 佐藤尚; 安森正宪
Original assignee: Sony Corp
Current assignee: Japan Display Inc
Priority date: 2007-09-28
Filing date: 2008-09-27
Publication date: 2011-01-26
Anticipated expiration: 2028-09-27
Also published as: JP5171329B2; CN101398547A; JP2009098599A; KR20090032977A; TW200919400A; TWI390479B; KR100970690B1

Abstract

The invention provides a display unit having light intensity detecting device having light sensitivity correction function and having simple process. The display unit has a display area and first and second photodetectors (10a) and (10b) on a substrate and outputs as a light intensity signal (S) a light intensity detected by the first and second photodetectors (10a) and (10b). The first photodetector (10a) includes a first photodetection circuit (LS1) outputting a first output signal Sa to an ambient light photosensor reader (20), and the second photodetector (10b) includes a light-reducing unit and a second photodetection circuit (LS2) outputting a second output signal (Sb) to an ambient light photosensor reader (20). The ambient light photosensor reader (20) includes a photodegradation factor calculator (21) calculating a photodegradation reparation factor (K), a photodegradation rate calculator (22) deriving a photodegradation rate (D) based on the photodegradation reparation factor (K), and a light signal output unit (24) outputting a light intensity signal S based on the photodegradation rate (D).

Description

Display device

Technical field

The present invention relates to a kind of display device.

Background technology

Existing circuit detecting ambient light is leakage current and the proportional relation of light income of utilizing thin film transistor (TFT), carry out the charge or discharge of electric charge with capacitor to voltage detecting with this leakage current, and monitor change in voltage between these capacitor two ends, thereby detect light quantity (as patent documentation 1).

Though the leakage current of thin film transistor (TFT) is proportional with light income,, can descend because of being exposed in the light as the luminous sensitivity of leakage current value as everyone knows with respect to light income.Therefore, in the circuit detecting ambient light of above-mentioned patent documentation 1, cause the decline of light quantity accuracy of detection owing to the reduction of this luminous sensitivity.

Now existing a kind of photo-electric conversion element is to have improved method of manufacturing thin film transistor in order to prevent as the decline of above-mentioned accuracy of detection, has improved anti-degradation characteristic (as patent documentation 2).

Patent documentation 1 TOHKEMY 2006-29832 communique

Patent documentation 2 Japanese kokai publication hei 9-232620 communiques

But the photo-electric conversion element of record needs special creating conditions in the above-mentioned patent documentation 2, therefore has the problem that manufacturing cost rises.Be specially, when optical sensor being embedded into the display device inside of using thin film transistor (TFT), when perhaps making display device and optical sensor with a device, can't be with driving transistors and manufacturing process's universalization of display device, so need append manufacturing process and manufacturing installation is carried out numerous and diverse condition enactment.

Summary of the invention

The present invention is to be purpose with at least a portion that solves above-mentioned problem, can realize by following form or application examples.

[application examples 1]

Display device that should use-case is, has the display device that possesses on substrate with the viewing area of the corresponding on-off element of each pixel, it is characterized in that, comprising: the 1st optical detection part, and it possesses the 1st optical sensor; The 2nd optical detection part, it possesses the 2nd optical sensor; The light quantity pick-up unit, it has the optical sensor reading part, will export as light amount signal at described the 1st optical detection part and the detected light quantity of described the 2nd optical detection part; Dimmer arrangement, it is formed at least one the zone that is superimposed on when overlooking in described the 1st optical sensor and described the 2nd optical sensor, and makes to described the 1st optical sensor different with the incident light quantity of the 2nd optical sensor; And described the 1st optical detection part has the 1st optical detection circuit, and the 1st optical detection circuit will output to described optical sensor reading part based on the 1st output signal of the incident light that incides the 1st optical sensor; Described the 2nd optical detection part has the 2nd optical detection circuit, and the 2nd optical detection circuit will output to described optical sensor reading part based on the 2nd output signal of the incident light that incides the 2nd optical sensor; Described optical sensor reading part possesses: deterioration factor calculation portion, it is to the ratio of described the 1st output signal and described the 2nd output signal, promptly measure than performing calculations, calculate light deterioration correction coefficient again, this light deterioration correction coefficient is that described mensuration is the initial ratio that compares than the described mensuration ratio with the original state of measuring in advance; Light deterioration rate calculation portion, it derives the light deterioration rate of the described the 1st or the 2nd output signal according to described smooth deterioration correction coefficient; The light signal efferent, it is proofreaied and correct according to described smooth deterioration rate and exports after the described the 1st or the 2nd output signal makes its light amount signal that becomes original state.

Thus, can calculate out the 1st or the 2nd output signal of original state, just change and to obtain the display device that possesses the luminous sensitivity calibration function so need not structure to the 1st and the 2nd optical sensor from the 1st or the 2nd output signal and pre-prepd initial ratio.

And the manufacturing process of the 1st and the 2nd optical sensor can be general with the driving transistors and the manufacturing process of display device, so just can make the 1st and the 2nd optical sensor by simple operation.Thereby, can reduce manufacturing cost.

[application examples 2] in above-mentioned display device, is preferably, and has: the 1st dimmer arrangement, and the light quantity of described the 1st optical sensor is incided in its attenuating; The 2nd dimmer arrangement, the light quantity of described the 2nd optical sensor is incided in its attenuating; And the attenuating rate of the incident light by described the 2nd dimmer arrangement is greater than the attenuating rate of the incident light by described the 1st dimmer arrangement.

Thus, can lower the light quantity that incides the 1st optical sensor and the 2nd optical sensor, so can postpone the light degradation speed of each optical sensor.So can prolong because the carrying out of the light deterioration of each optical sensor, the ratio of the 1st output signal and the 2nd output signal no longer change so that cause fully proofreading and correct till time.Therefore, then can provide the display device that can prolong the correction life-span according to this structure.

In [application examples 3] above-mentioned display device, be preferably, the relative spectral transmitance of described the 1st dimmer arrangement and described the 2nd dimmer arrangement equates.

The deviation that can suppress thus, the light deterioration amount that the difference because of incident light produces on the 1st optical sensor and the 2nd optical sensor.This is because light deterioration amount depends on the product of the spectrum sensitivity of the spectral characteristic of the incident light that incides each optical sensor and each optical sensor, so can suppress the deviation of the light deterioration amount that the difference because of incident light takes place by the dimmer arrangement that uses the relative spectral transmitance to equate.Therefore, can provide the display device that to carry out stable correction.

[application examples 4] in above-mentioned display device, is preferably, and described dimmer arrangement has the shading member, and this shading member covers the part of the light that incides described the 1st optical sensor or described the 2nd optical sensor.

Thus, can carry out dim light to the light that incides described the 1st optical sensor or described the 2nd optical sensor.So, can calculate the 1st or the 2nd output signal of original state from the 1st and the 2nd output signal and pre-prepd initial ratio, and then can realize that the structure that need not the 1st and the 2nd optical sensor changes, possess the luminous sensitivity calibration function and can prolong the display device of proofreading and correct the life-span.

[application examples 5] in above-mentioned display device, is preferably, and described dimmer arrangement has dim light member and described shading member, and this dim light member carries out dim light to the light that incides described the 1st optical sensor or described the 2nd optical sensor.

Thus, can carry out dim light to the light that incides described the 1st optical sensor or described the 2nd optical sensor.So, can calculate the 1st or the 2nd output signal of original state from the 1st and the 2nd output signal and pre-prepd initial ratio, and then realize need not the structure of the 1st and the 2nd optical sensor is changed, possess the luminous sensitivity calibration function and can prolong the display device of proofreading and correct the life-span.

[application examples 6] in above-mentioned display device, is preferably, and described smooth deterioration rate calculation portion has look-up table (Lookup Table), and the correction coefficient of light deterioration described in this look-up table is corresponding with described smooth deterioration rate.

Suppose that light deterioration rate is that when this function became the complex mathematical formula, it is big that circuit scale will become under the situation of function representation of parameter with light deterioration correction coefficient.Therefore, cause manufacturing cost to uprise, it is big that power consumption also becomes.Because light deterioration rate calculation portion has look-up table replacing this function, therefore need not large-scale circuit, therefore the may command manufacturing cost can be provided and the display device of power consumption can be reduced.

[application examples 7] is in above-mentioned display device, be preferably, when described smooth deterioration correction coefficient is not included on the described look-up table, the described smooth deterioration rate that derive will be calculated by the interpolation of having used the described smooth deterioration correction coefficient on the described look-up table by described smooth deterioration rate calculation portion.

Thus, can derive be not included on the look-up table with the corresponding light deterioration rate of light deterioration correction coefficient arbitrarily, thereby the display device that can dwindle look-up table and may command data volume can be provided.

[application examples 8] in above-mentioned display device, is preferably, and described the 1st optical sensor and described the 2nd optical sensor are thin film transistor (TFT), and have the capacitor that the voltage on the two ends that are applied to described thin film transistor (TFT) is charged.

Thus, because the current potential change along with the light quantity of incident light that incides optical sensor and dim light incident light that is recharged in capacitor is so can provide the display device that this current potential can be outputed to the optical sensor reading part as the 1st and the 2nd output signal.

[application examples 9] in above-mentioned display device, is preferably, and the described the 1st or the 2nd output signal is based on the photoelectricity flow or tries to achieve because of the voltage that the discharges and recharges initiation time of reducing of carrying out electric charge to described capacitor.

Thus, can in the optical sensor reading part, calculate light deterioration correction coefficient and light deterioration rate, so the display device that can export through the light amount signal of overcorrect can be provided.

[application examples 10] is in above-mentioned display device, be preferably, described deterioration factor calculation portion carries out log-transformation and calculates out described smooth deterioration correction coefficient the described the 1st or the 2nd output signal, and, described smooth deterioration rate calculation portion is with reference to the described smooth deterioration correction coefficient of logarithm and the corresponding look-up table of described smooth deterioration rate of logarithm, obtain described logarithm light deterioration rate from the light deterioration correction coefficient of the described logarithm of described deterioration factor calculation portion output, described light signal efferent returns to the real number line output of going forward side by side with the 1st or the 2nd output signal of the described logarithm after proofreading and correct after proofreading and correct the described the 1st or the 2nd output signal of logarithm with described logarithm light deterioration rate.

Thus, in the optical sensor reading part, enough additions of energy and subtraction circuit replace multiplication and division circuit, so the display device of dwindling line size and controlling power consumption can be provided.And, can also reduce manufacturing cost thus.

[application examples 11] in above-mentioned display device, is preferably, and possesses the electro-optical substance layer in described viewing area.

Thus, can detect the incident light quantity of electro-optical substance layer, carry out the display device that image shows so can provide with the luminous quantity that is fit to institute's environment for use by optical sensor.

[application examples 12] in above-mentioned display device, is preferably, described the 1st optical detection part and described the 2nd optical detection part, and the outward flange along described viewing area disposes on one side at least side by side respectively.

Thus, can improve accuracy of detection detect near the position of display part as far as possible.And, by configuration the 1st optical detection part arranged side by side and the 2nd optical detection part, can suppress the characteristic deviation of the 1st optical sensor and the 2nd optical sensor, can also improve accuracy of detection.

[application examples 13] in above-mentioned display device, is preferably, and described the 1st optical detection part and described the 2nd optical detection part are respectively along the outward flange of described viewing area cross-over configuration mutually on one side at least.

Thus, can suppress to shine the deviation of the light quantity of the 1st optical sensor and the 2nd optical sensor, and reduce the deterioration deviation of the 1st optical sensor and the 2nd optical sensor.

[application examples 14] in above-mentioned display device, is preferably, and described the 1st optical detection part and described the 2nd optical detection part are configured on the interior part of described pixel.

Thus, can directly detect the light quantity that shines the demonstration field.So, can further improve accuracy of detection.

[application examples 15] in above-mentioned display device, is preferably, and the total of the total of described the 1st optical sensor size and described the 2nd optical sensor size equates.

Thus, the light-receiving area of each optical sensor is equated, thereby improve accuracy of detection.

[application examples 16] in above-mentioned display device, is preferably, and described dimmer arrangement is colored filter, Polarizer or polarizer.

Thus, colored filter or the Polarizer or the shared manufacturing process of polarizer that can be possessed with general display device are so just can make dimmer arrangement with simple procedures.Therefore, can reduce manufacturing cost.

[application examples 17] in above-mentioned display device, is characterized by, and described shading member is black matrix.

Thus, as the shading member form black matrix then can with the shared manufacturing process of the black matrix that general display device is possessed, so just can make the shading member with simple procedures.Therefore, can reduce manufacturing cost.

Description of drawings

Fig. 1 is the vertical view of transflective liquid crystal display device 1000.

Fig. 2 is the vertical view that 1 pixel of array base palte is divided.

Fig. 3 is the III-III line sectional view of Fig. 2.

Fig. 4 is the block diagram of the structure of expression light quantity pick-up unit 1.

Fig. 5 is the circuit structure diagram of the 1st optical detection circuit LS1, the 2nd optical detection circuit LS2.

Fig. 6 is the mode sectional drawing of the 1st, the 2nd optical detection part, and Fig. 6 (a) represents the 1st optical detection circuit LS1, and Fig. 6 (b) represents the 2nd optical detection circuit LS2.

Fig. 7 is the figure of expression with respect to the function of the photocurrent I of incident light quantity L.

Fig. 8 is the figure of expression with respect to the function of the photocurrent I of incident light quantity L.

Fig. 9 is the process flow diagram of the correction of photocurrent.

Figure 10 is the figure of the determination data of expression light deterioration correction coefficient K and light deterioration rate D.

Figure 11 is the circuit structure diagram of expression dimmer arrangement configuration example 1.

Figure 12 is the figure of the mensuration ratio of expression the 1st output signal and the 2nd output signal.

Figure 13 is the circuit structure diagram of expression dimmer arrangement configuration example 2.

Figure 14 is the circuit structure diagram of expression dimmer arrangement configuration example 3.

Figure 15 for expression capacitor current potential through the time figure that changes.

Figure 16 is the process flow diagram of the correction of photocurrent.

Figure 17 is the vertical view of the configuration example 1 of expression the 1st optical detection part and the 2nd optical detection part.

Figure 18 is the vertical view of the configuration example 2 of expression the 1st optical detection part and the 2nd optical detection part.

Figure 19 is the vertical view of the configuration example 3 of expression the 1st optical detection part and the 2nd optical detection part.

[symbol description]

1: the light quantity pick-up unit; 10a: the 1st optical detection part;

10b: the 2nd optical detection part; 20: the optical sensor reading part;

21: deterioration factor calculation portion; 22: light deterioration rate calculation portion;

23: memory circuit; 24: the light signal efferent;

100: thin film transistor (TFT) (TFT); 110: capacitor;

200: thin film transistor (TFT) (TFT); 210: capacitor;

250: coloured filter; 400: pixel; 1000: liquid crystal indicator;

Ia (L), Iaa (L), Ib (L), Ibb (L): photocurrent;

K: light deterioration correction coefficient; D: light deterioration rate;

L: incident light quantity; LS1: the 1st optical detection circuit;

LS2: the 2nd optical detection circuit; DA: viewing area;

S: light amount signal; Sa: the 1st output signal; Sb: the 2nd output signal.

Embodiment

Below, with reference to the accompanying drawings display device of the present invention is described.Present embodiment is only represented a form of the present invention, does not limit the present invention, can change arbitrarily in technical conceive scope of the present invention.In addition, be more readily understood in order to make each structure, engineer's scale in figure below in practical structures and each structure and number etc. are different.

Embodiment 1

Fig. 1 is the array base palte vertical view in the transflective liquid crystal display device (display device/electro-optical device) of the embodiment of the invention 1.Fig. 1 is the perspective representation colored filter.Fig. 2 is the vertical view of 1 pixel of the array base palte of Fig. 1.Fig. 3 is the III-III line sectional view of Fig. 2.

As shown in Figure 1, liquid crystal indicator 1000 is by the rectangle transparent insulation material of mutual arranged opposite, for example form the array substrate AR of (with reference to Fig. 3), and equally also be by arranging that on the transparency carrier 1010 that is constituted by the rectangle transparent insulation material colored filter substrate CF that various distributions form (with reference to Fig. 3) is constituted by arranging various distributions on the transparency carrier 1002 that glass plate constituted.Array substrate AR is used than the big substrate of colored filter substrate CF size, so that can form the teat 1002A with regulation space during with its disposes relative with colored filter substrate CF.On the outside of this array substrate AR and colored filter substrate CF, be pasted with encapsulant (not shown), to enclose liquid crystal (electro-optical substance) 1014 (with reference to Fig. 3) and liner (not shown) inner.

Array substrate AR has separately minor face 1002a, 1002b and long limit 1002c, 1002d in opposite directions, the minor face 1002b side of one side becomes teat 1002A, on this teat 1002A, be equipped with source electrode driver and gate drivers semi-conductor chip Dr, be equipped with the 1st optical detection part 10a and the 2nd optical detection part 10b on the minor face 1002a side of opposite side.In addition, be provided with backlight (not shown) at the back side of array substrate AR as illuminating apparatus.According to the output of the 1st optical detection part 10a and the 2nd optical detection part 10b, control this backlight by external control circuit (not shown).

This array substrate AR is at its face relative with colored filter substrate CF, promptly with on the face that liquid crystal contacts has: many gate lines G W, and it is arranged on Fig. 1 transverse direction (X-direction), and being spaced with regulation; With many source electrode line SW, itself and described gate lines G W insulate, and are arranged on longitudinal direction (Y direction), and being spaced with regulation.Be routed to these source electrode lines SW and gate lines G W rectangular, in each zone that is surrounded by cross one another gate lines G W and source electrode line SW, be formed with, the on-off element that sweep signal by gate lines G W is in on-state is TFT (with reference to Fig. 2), and receives pixel electrode 1026 (with reference to Fig. 3) from the signal of video signal of source electrode line SW by on-off element.

Each zone that is surrounded by these gate lines G W and source electrode line SW constitutes so-called pixel, and the zone that possesses a plurality of these pixels will constitute viewing area DA.In addition, for example can use thin film transistor (TFT) (TFT) as on-off element.

Each gate lines G W and each source electrode line SW extend to outside the DA of viewing area, i.e. frame (border therearound) zone and being connected on the driver Dr that semi-conductor chip constituted by LSI etc.In addition, be furnished with the 1st, the 2nd optical detection circuit LS1 on long limit 1002d one side of a side of array substrate AR from the 1st, the 2nd

optical detection part

10a, 10b, inlead L1～L4 that LS2 derives, and the contact that is connected external control circuit 50 is on terminal T1～T4.And inlead L1 constitutes the 1st source electrode line, and inlead L2 constitutes the 2nd source electrode line, and inlead L3 constitutes drain line, and inlead L4 constitutes gate line.

External control circuit 50 has optical sensor reading part 20 and potential control circuit 30.

Optical sensor reading part 20 is connected with terminal T1, T2, and potential control circuit 30 is connected with terminal T3, T4.Potential control circuit 30 provides reference voltage, grid voltage etc. to the 1st, the 2nd

optical detection part

10a, 10b, outputs to optical sensor reading part 20 from the output signal of the 1st, the 2nd optical detection part 10a, 10b.And then, according to light amount signal not shown backlight is controlled from optical sensor reading part 20.

In addition, replace the driver Dr on the transparency carrier 1002 to replace by IC (Integrated circuit) chip with driver Dr, optical sensor reading part 20 etc.

Then, mainly the concrete structure of each pixel is described with reference to Fig. 2 and Fig. 3.Fig. 2 is the vertical view of array base palte 1 pixel of Fig. 1.Fig. 3 is the III-III line sectional view of Fig. 2.

On the viewing area DA on the transparency carrier 1002 of array substrate AR, gate lines G W is with uniformly-spaced parallel formation, and extends the gate electrode G of the TFT that constitutes on-off element from this gate lines G W.Substantial middle place between the gate lines G W of this adjacency is formed with the auxiliary capacitance line parallel with gate lines G W 1016, is formed with the auxiliary capacitance electrode 1017 also wideer than auxiliary capacitance line 1016 on this auxiliary capacitance line 1016.

In addition, be pressed with the gate insulating film 1018 that constitutes by transparent insulation materials such as silicon nitride or monox on all faces upper strata of transparency carrier 1002, with covering gate polar curve GW, auxiliary capacitance line 1016, auxiliary capacitance electrode 1017 and gate electrode G.On gate electrode G, be formed with the semiconductor layer 1019 that forms by amorphous silicon etc. by gate insulating film 1018.Multiple source polar curve SW and gate lines G W intersect to form on gate insulating film 1018, extend the source electrode S of TFT from this source electrode line SW, so that contact with semiconductor layer 1019, and, the drain electrode D that constitutes with source electrode line SW and source electrode S identical materials also is set on the gate insulating film 1018, so that contact with semiconductor layer 1019.

At this, gate lines G W and source electrode line SW institute area surrounded are equivalent to 1 pixel.TFT as on-off element is made of gate insulating film 1018, semiconductor layer 1019, source electrode S and drain electrode D.This TFT is formed on each pixel.At this moment, the auxiliary capacitor of each pixel is formed by drain electrode D and auxiliary capacitance electrode 1017.

Be pressed with the protection dielectric film (being also referred to as passivating film) 1020 that for example constitutes by inorganic insulating material on all faces upper strata of transparency carrier 1002; to cover these source electrode lines SW, TFT, gate insulating film 1018; be pressed with the interlayer (being also referred to as planar film) 1021 that for example forms on these protection dielectric film 1020 upper stratas, to cover transparency carrier 1002 all faces by the acrylic resin that contains negative photosensitive material.The surface of this interlayer 1021 forms fine concavo-convex in reflecting part 1022, is made into smooth in transmissive portions 1023.

By sputtering method, on the surface of the interlayer 1021 of reflecting part 1022, form the reflecting plate of for example making 1024 by aluminium and even aluminium alloy, on the position corresponding to drain electrode D of protection dielectric film 1020, interlayer 1021 and reflecting plate 1024, be formed with contact hole 1025.

And, in each pixel, be formed with the pixel electrode 1026 that for example constitutes in the surface of reflecting plate 1024, contact hole 1025 and on the surface of the interlayer 1021 of transmissive portions 1023, the alignment film (not shown) that covers all pixels is arranged at the upper strata of this pixel electrode 1026 lamination by ITO (Indium TinOxide) and even IZO (Indium Zinc Oxide).

Colored filter substrate CF forms the light shield layer (not shown) relative with source electrode line SW with the gate lines G W of array substrate AR on the surface of the transparency carrier 1010 that is made of glass substrate etc., and the corresponding color filter layers 1027 that is for example had redness (R), green (G), blue (B) to constitute by each pixel setting that this light shield layer surrounded.On the surface of the color filter layers 1027 of corresponding reflecting part 1022 positions, be formed with external coating (topcoat) 1028, be pressed with current electrode 1029 and alignment film (not shown) on the surperficial upper strata of the color filter layers 1027 of the position of the surface of this external coating 1028 and corresponding transmissive portions 1023.Sometimes also further make up the color filter layers of cyan (C), carmetta (M), yellow (Y) etc. aptly as color filter layers 1027, and color filter layers is not set when monochrome shows sometimes yet.

Then, by bonding array substrate AR and the colored filter substrate CF of encapsulant (not shown) with said structure, at last liquid crystal 1014 is enclosed in described two zones that substrate and encapsulant constituted, thereby obtained transflective liquid crystal display device 1000.Dispose not shownly at the downside of transparency carrier 1002, possess backlight or sidelight source (the Side Light) of known light source, light guide plate, light diffusing patch etc.

At this moment, if reflecting plate 1024 all is set in the bottom of pixel electrode 1026, then can obtain the reflective liquid crystal display panel, but be to use the reflection-type liquid-crystal display device of this reflective liquid crystal display panel to use front light source (Front Light) to replace backlight and sidelight source.

The block diagram of the structure of the light quantity pick-up unit 1 that Fig. 4 is made of the 1st optical detection part 10a, the 2nd optical detection part 10b and optical sensor reading part 20 for expression.

The 1st optical detection part 10a has the 1st optical detection circuit LS1, and the 2nd optical detection part 10b has the 2nd optical detection circuit LS2.Be output to optical sensor reading part 20 from the 1st output signal Sa of the 1st optical detection circuit LS1 with from the 2nd output signal Sb of the 2nd optical detection circuit LS2.

Optical sensor reading part 20 has deterioration factor calculation portion 21, light deterioration rate calculation portion 22, memory circuit 23 and light signal efferent 24.

Deterioration factor calculation portion 21 is connected with memory circuit 23 with the 1st optical detection circuit LS1, the 2nd optical detection circuit LS2, converts the 1st output signal Sa and the 2nd output signal Sb to the leakage current of optical sensor, i.e. the 1st photoelectricity flow and the 2nd photoelectricity flow.Calculate out the mensuration ratio then, i.e. the ratio of the 1st photoelectricity flow and the 2nd photoelectricity flow, thereby calculate this mensuration than and be stored in the memory circuit 23, the described mensuration ratio of pre-prepd original state is the initial ratio that compares, i.e. light deterioration correction coefficient K.Subsequently, deterioration factor calculation portion 21 outputs to light deterioration rate calculation portion 22 with light deterioration correction coefficient K.And, the 2nd photoelectricity flow is outputed to light signal efferent 24.

Light deterioration rate calculation portion 22 is connected with memory circuit 23 with deterioration factor calculation portion 21.With reference to being the corresponding look-up table of ratio of the 2nd photoelectricity flow of the 2nd photoelectricity flow and original state, obtain light deterioration rate D then corresponding to the light deterioration correction coefficient K that exports from deterioration factor calculation portion 21 with light deterioration correction coefficient K and light deterioration rate D.Then, the light deterioration rate D that obtains is outputed to light signal efferent 24.

Light signal efferent 24 is connected with light deterioration rate calculation portion 22 with deterioration factor calculation portion 21.And use from the 2nd photoelectricity flow of deterioration factor calculation portion 21 output with from the 2nd photoelectricity flow that the light deterioration rate D of light deterioration rate calculation portion 22 outputs calculates out original state, the 2nd photoelectricity flow of this original state is exported as the light amount signal S that is equivalent to incident light quantity.

Fig. 5 is the circuit structure diagram of the 1st, the 2nd

optical detection part

10a, 10b.

The 1st optical detection circuit LS1 of the 1st optical detection part 10a has thin film transistor (TFT) 100 (being designated hereinafter simply as " TFT100 "), capacitor 110 and the on-off element 120 as the 1st optical sensor.TFT100 is in parallel with capacitor 110.That is, the source portion 101 of TFT100 and the electrode of capacitor 110 111 form and are electrically connected, and the drain portion 102 of TFT100 and the electrode of capacitor 110 112 form and be electrically connected.Source portion 101 and electrode 111 are connected on the lead-out terminal 140, and are connected with power supply terminal 130 by on-off element 120.Lead-out terminal 140 is electrically connected with terminal T1 formation by the inlead L1 of Fig. 1.

In addition, the drain portion 102 of TFT100 and the electrode 112 of capacitor 110 are electrically connected with drain terminal 191 formation.Drain terminal 191 is electrically connected with terminal T3 formation by the inlead L3 of Fig. 1.Drain terminal 191 is grounded, and it also can be grounded in the 1st optical detection part 10a, also can be grounded by terminal T3.In addition, the gate portion 103 of TFT100 forms with gate terminal 190 and is electrically connected.

The 2nd optical detection circuit LS2 of the 2nd optical detection part 10b has, as the thin film transistor (TFT) 200 (being designated hereinafter simply as " TFT200 ") of the 2nd optical sensor and capacitor 210, on-off element 220 with as the colored filter (dim light member) 250 of dimmer arrangement.Colored filter 250 be formed on when overlooking and the TFT200 overlapping areas on, can reduce the light quantity that incides TFT200.TFT200 is in parallel with capacitor 210.That is, the source portion 201 of TFT200 and the electrode of capacitor 210 211 form and are electrically connected, and the drain portion 202 of TFT200 and the electrode of capacitor 210 212 form and be electrically connected.Colored filter 250 is configured in the light inlet side of TFT200, and TFT200 detects the light through colored filter 250 dim lights.Source portion 201 and electrode 211 are connected on the lead-out terminal 240, and are connected with power supply terminal 230 by on-off element 220.Lead-out terminal 240 is connected electrically in terminal T2 by the inlead L2 of Fig. 1.

In the following description, sometimes the 1st optical sensor and the 2nd optical sensor summary are referred to as " optical sensor ".

In addition, the drain portion 202 of TFT200 and the electrode 212 of capacitor 210 are electrically connected with drain terminal 191 formation.Drain terminal 191 is terminals general with TFT100, and the inlead L3 by Fig. 1 forms with terminal T3 and is electrically connected.

And the gate portion 203 of TFT200 is electrically connected with TFT100 and 190 formation of general gate terminal.

Lead-out terminal 240 is electrically connected with terminal T2 formation by the inlead L2 of Fig. 1.Drain terminal 191 is electrically connected with terminal T3 formation by the inlead L3 of Fig. 1.Gate terminal 190 is electrically connected with terminal T4 formation by the inlead L4 of Fig. 1.

Fig. 6 is the mode sectional drawing of the 1st, the 2nd

optical detection part

10a, 10b, and Fig. 6 (a) represents the 1st optical detection circuit LS1, and Fig. 6 (b) represents the 2nd optical detection circuit LS2.

At first, Fig. 6 (a) is described.On transparency carrier 1002, be formed with the TFT100, capacitor 110 and the on-off element 120 that constitute the 1st optical detection circuit LS1.On transparency carrier 1002, be formed with the electrode 112 of gate portion 103, the capacitor 110 of TFT100, as the gate portion 123 of the thin film transistor (TFT) of on-off element 120.And lamination has the gate insulating film 72 of cover gate portion 103, electrode 112 and gate portion 123.

In the gate insulating film 72, the top of gate portion 103 is formed with semiconductor layer 104, is formed with semiconductor layer 124 above gate portion 123.On gate insulating film 72, be formed with: the conducting film 173 that is connected with the drain portion 102 of semiconductor layer 104, the conducting film 174 that is connected with the drain portion 122 of source portion 101 and semiconductor layer 124, the conducting film 175 that is connected with source portion 121.Constitute the electrode 111 of capacitor 110 in the zone of conducting film 174 on electrode 112.

Cover these conducting film 173,174,175 laminations protection dielectric film 76 is arranged.Be formed with black matrix 125 on protection dielectric film 76, it can planarity cover on-off element 120 semiconductor layers 124.

The 1st optical detection circuit LS1 and viewing area DA are formed on the same substrate, can with the part of the shared manufacturing process of array substrate AR.For example; the gate insulator plate 72 of the 1st optical detection circuit LS1 and the gate insulating film 1018 of array substrate AR; the protection dielectric film 76 of the 1st optical detection circuit LS1 and the protection dielectric film 1020 of array substrate AR; the conducting film 173,174,175 of the 1st optical detection circuit LS1 and source electrode S, the drain electrode D of array substrate AR, the semiconductor layer 104,124 of the 1st optical detection circuit LS1 and the semiconductor layer 1019 of array substrate AR etc.

Then, Fig. 6 (b) is described.On transparency carrier 1002, be formed with the TFT200, capacitor 210 and the on-off element 220 that constitute the 2nd optical detection circuit LS2.On transparency carrier 1002, be formed with the electrode 212 of gate portion 203, the capacitor 210 of TFT200, as the gate portion 223 of the on-off element 220 of thin film transistor (TFT).And lamination has the gate insulating film 72 of cover gate portion 203, electrode 212 and gate portion 223.

In the gate insulating film 72, the top of gate portion 203 is formed with semiconductor layer 204, is formed with semiconductor layer 224 above gate portion 223.On gate insulating film 72, be formed with: the conducting film 273 that is connected with the drain portion 202 of semiconductor layer 204, the conducting film 274 that is connected with the drain portion 222 of source portion 201 and semiconductor layer 224, the conducting film 275 that is connected with source portion 221.Constitute the electrode 211 of capacitor 210 in the zone of conducting film 274 on electrode 212.

Cover these conducting film 273,274,275 laminations protection dielectric film 76 is arranged.Be formed with black matrix 225 on the dielectric film 76 in protection, it can planarity covers the semiconductor layer 224 of on-off element 220.And, facing mutually on the colored filter substrate CF of ground setting with protecting dielectric film 76, with TFT200 colored filter 250 is set mutually with facing.And, colored filter 250 be formed on when overlooking and the TFT200 overlapping areas on.By colored filter 250, make the light that incides the 2nd optical detection circuit LS2 with respect to the 1st optical detection circuit LS1 dim light to 1/n (n〉1).

The 2nd optical detection circuit LS2 and viewing area DA are formed on the same substrate, the part of energy shared array substrate AR and manufacturing process.For example; the gate insulator plate 72 of the 2nd optical detection circuit LS2 and the gate insulating film 1018 of array substrate AR; the protection dielectric film 76 of the 2nd optical detection circuit LS2 and the protection dielectric film 1020 of array substrate AR; the semiconductor layer 204,224 of the conducting film 273,274,275 of the 2nd optical detection circuit LS2 and source electrode S, the drain electrode D of array substrate AR and the 2nd optical detection circuit LS2 and the semiconductor layer 1019 of array substrate AR etc.

The light quantity pick-up unit 1 of the display device 1000 of present embodiment has the function of correction because of the luminous sensitivity of the optical sensor of light deterioration step-down.Luminous sensitivity correction principle to optical sensor describes below.

At first, to capacitor 110,210 being charged to the 1st, the 2nd optical detection part 10a, the 10b irradiation light till the regulation current potential.Thus, produce leakage current in TFT100,200, the current potential of capacitor 110,210 passes through step-down in time.At this moment, the current potential of the electrode 111,211 of capacitor 110,210, is output as output signal Sb from the 2nd optical detection part 10b as the 1st output signal Sa from the 1st optical detection part 10a.And, in optical sensor reading part 20, from the electric potential signal of the 1st, the 2nd

optical detection part

10a, 10b output, read the information that is equivalent to photocurrent, carry out exporting as light amount signal after the treatment for correcting.

Therefore, will the calculation method based on photocurrent be described below, and the photocurrent that uses in calculation is replaceable to be the read value in the optical sensor reading part 20.

During the luminous sensitivity of optical sensor is proofreaied and correct, at first, to the 2nd photocurrent of the 1st photocurrent of the 1st optical detection circuit LS1 of determined (after the light deterioration) and the 2nd optical detection circuit LS2 measure ratio than promptly, with the ratio that mensuration in the original state compares, promptly light deterioration correction coefficient K performs calculations.Then, according to the light deterioration correction coefficient K that calculates by calculation, calculate the 2nd photocurrent of the 2nd optical detection circuit LS2 after the deterioration and the ratio of the 2nd photocurrent of the 2nd optical detection circuit LS2 of original state, i.e. light deterioration rate D.Thereafter, according to light deterioration rate D, with the light amount signal S output of the 2nd photocurrent of the 2nd optical detection circuit LS2 of original state as incident light.

At this, the algorithm of light deterioration correction coefficient K is described.Fig. 7 is the figure of expression with respect to the function of the photocurrent I of incident light quantity L.Represented function Ia (L) among Fig. 7 with respect to the 1st photocurrent of the 1st optical detection circuit LS1 of incident light quantity L, the 2nd photocurrent function Ib (L) with the 2nd optical detection circuit LS2, and can obtain the 1st photocurrent Ia (L) of (original state) before the deterioration and the ratio of the 2nd photocurrent Ib (L) from these, promptly initially than.

Because photocurrent and incident light quantity increase pro rata, so, with the initial sensitivity of the 1st optical detection circuit LS1 as Xa0, with the initial sensitivity of the 2nd optical detection circuit LS2 during as Xb0, the 1st photocurrent Ia (L) that can following expression the 1st optical detection circuit LS1 and the 2nd photocurrent Ib (L) of the 2nd optical detection circuit LS2:

Ia(L)＝Xa0·L

Ib(L)＝Xb0·L

Therefore, as certain light quantity L0 during as incident light incident, the dim light incident light light quantity of the 2nd optical detection circuit LS2 is L0/n, and then the 1st photocurrent Ia (L0) of the 1st optical detection circuit LS1 during light quantity L0 and the 2nd photocurrent Ib (L0/n) of the 2nd optical detection circuit LS2 are expressed as follows:

Ia(L0)＝Xa0·L0

Ib(L0/n)＝Xb0·(L0/n)

Thus, initial than becoming Ia (L0)/Ib (L0/n)=n (Xa0/Xb0).Should be initial than irrelevant with incident light quantity L0, and and initial sensitivity Xa0, Xb0 and n have functional relation, the mensuration of incident light quantity L likens to initial than use arbitrarily.

Mensuration ratio during then, to deterioration performs calculations.Fig. 8 is the figure of expression with respect to the function of the photocurrent I of the incident light quantity L after the deterioration.The function Ibb (L) that has represented the 2nd photocurrent of the function Iaa (L) of the 1st photocurrent of function Ib (L), the 1st optical detection circuit LS1 after the deterioration of the 2nd photocurrent of function Ia (L), original state of the 1st photocurrent of original state and the 2nd optical detection circuit LS2 after the deterioration among Fig. 8.Fig. 8 is used to try to achieve the mensuration ratio after the deterioration.

Deterioration takes place and causes luminous sensitivity to reduce because of being exposed in optical sensor in the light, so with respect to original state photocurrent step-down.The reduction of this luminous sensitivity can be that the function R (p) (＜1) of integrating light quantity p is tried to achieve by the accumulative total of the light quantity that begins to shine from original state.In the time of will being made as p through the integrating light quantity of the 1st optical detection circuit LS1 behind the certain hour, the integrating light quantity of the 2nd optical detection circuit LS2 becomes p/n.Therefore, the sensitivity that light exposes back the 1st optical detection circuit LS1 that is subjected to of integrating light quantity p is made as Xa1, during with being subjected to sensitivity that light exposes back the 2nd optical detection circuit LS2 and being made as Xb1 of integrating light quantity p/n, can followingly represents.

Xa1＝R(p)·Xa0

Xb1＝R(p/n)·Xb0

Therefore, the 1st photocurrent Iaa (L) of the 1st optical detection circuit LS1 after the deterioration and the 2nd photocurrent Ibb (L) of the 2nd optical detection circuit LS2 after the deterioration can be expressed as follows:

Iaa(L)＝Xa1·L＝R(p)·Xa0·L

Ibb(L)＝Xb1·L＝R(p/n)·Xb0·L

Because the 1st optical detection circuit does not possess the dimmer arrangement of colored filter 250 grades, its integrating light quantity is greater than the integrating light quantity of the 2nd optical detection circuit LS2.So very fast as the deterioration of the TFT100 of the 1st optical sensor, the reduction of the 1st photocurrent Iaa (L) is bigger.

Therefore, as certain light quantity L1 during as incident light incident, the dim light incident light light quantity of the 2nd optical detection circuit LS2 is L1/n, so the 1st photocurrent Iaa (L1) of the 1st optical detection circuit LS1 in can following expression light quantity L1 and the 2nd photocurrent Ibb (L1/n) of the 2nd optical detection circuit LS2:

Iaa(L1)＝Xa1·L1＝R(p)·Xa0·L1

Ibb(L1/n)＝Xb1·(L1/n)＝R(p/n)·Xb0·(L1/n)

Therefore, measure than becoming Iaa (L1)/Ibb (L1/n)=n (R (p)/R (p/n)) (Xa0/Xb0).Because this measures ratio and incident light quantity L1 onrelevant, thereby it is all more identical than also to obtain mensuration with any incident light quantity L.

According to the mensuration ratio after initial ratio of as above obtaining and the deterioration, can derive light deterioration correction coefficient K=(Iaa (L1)/Ibb (L1/n))/(Ia (L0)/Ib (L0/n))=R (p)/R (p/n), be the function of integrating light quantity p.

TFT100,200 deterioration progress can be judged by this light deterioration correction coefficient K.

Secondly, D describes to light deterioration rate.Light deterioration rate D is, the ratio of measured the 2nd photocurrent Ibb (L1/n) and the 2nd photocurrent Ib (L1/n) of original state can be expressed as D=Ibb (L1/n)/Ib (L1/n)=R (p/n) during as dim light incident light incident light quantity L1/n.This value and incident light quantity onrelevant depend on deterioration state.

This light deterioration rate D is corresponding with above-mentioned smooth deterioration correction coefficient K, obtains light deterioration rate D by trying to achieve this corresponding relation in advance from light deterioration correction coefficient K.From the light deterioration rate D that so tries to achieve and the 2nd photocurrent Ibb (L1/n) of mensuration, the 2nd photocurrent Ib (L1/n) that can calculate original state by Ib (L1/n)=Ibb (L1/n)/D.

By step as above, the 2nd photocurrent Ibb (L1/n) after the deterioration is corrected into the 2nd photocurrent Ib (L1/n) output of original state.

Then, the running of carrying out photocurrent timing as above in the light quantity pick-up unit 1 of display device 1000 of the present invention is described.

The process flow diagram that Fig. 9 proofreaies and correct for photocurrent.Have among Fig. 9: the step S1 of ratio is measured in calculation in deterioration factor calculation portion 21, from memory circuit 23 read initial ratio and calculate measure than with the initial ratio that the compares step S2 that is light deterioration correction coefficient K, the step S3 of the pairing smooth deterioration rate D of light deterioration correction coefficient K that reads and try to achieve from memory circuit 23, the step S5 that the step S4 of the photocurrent before the light deterioration rate D that the reads calculation bright dipping deterioration and the photocurrent that will derive by calculation are exported as the light amount signal S of incident light.

In step S1, capacitor 110,210 is charged to current potential VS.To the incident light of TFT100 incident light quantity L1,, on TFT100,200, produce photocurrent (leakage current) then to the dim light incident light of TFT200 incident light quantity L1/n.The current potential of capacitor 110,210 will reduce thus.1st, the 2nd

optical detection part

10a, 10b export the current potential of the capacitor 110,210 of this moment respectively as the 1st output signal Sa, the 2nd output signal Sb.

Then, in deterioration factor calculation portion 21, will convert TFT100,200 photocurrent to from the 1st output signal Sa of the 1st, the 2nd

optical detection part

10a, 10b output and the electric potential signal of the 2nd output signal Sb.Be charged to the current potential of capacitor 110,210, equate with potential difference (PD) between TFT100,200 source electrode and the drain electrode.Thereby the current potential of the many capacitors 110,210 of the big time electrorheological of the light quantity of incident light descends and becomes big.Relative therewith, the light quantity of incident light hour photocurrent is few, and the current potential of capacitor 110,210 descends also little.Therefore, just can be converted to current signal by obtaining the electric potential signal that begins after the stipulated time from the irradiation of incident light.That is, big more as the low more photocurrent of current potential of the capacitor 110,210 of electric potential signal, the high more photocurrent of the current potential of capacitor 110,210 is more little.

In the deterioration factor calculation portion 21, make electric potential signal corresponding, obtain the signal of the 1st photocurrent Iaa (L1) and the 2nd photocurrent Ibb (L1/n) from electric potential signal with photocurrent.

Then, measure than (Iaa (L1)/Ibb (L1/n)) from the 1st photocurrent Iaa (L1) and the 2nd photocurrent Ibb (L1/n) calculation of as above obtaining.

Enter step S2 thereafter, to be stored in initially reading in the deterioration factor calculation portion 21 in the memory circuit 23 in advance, calculation light deterioration correction coefficient K (=(Iaa (L1)/Ibb (L1/n))/(Ia (L0)/Ib (L0/n))) than (Ia (L0)/Ib (L0/n)).

At this moment, the 2nd photocurrent Ib (L0/n) that also can store the 1st photocurrent Ia (L0) of above-mentioned original state and original state in memory circuit 23 to be replacing initial ratio, in step S2 calculation initially than.

Enter step S3 thereafter.Among the step S3, the light deterioration correction coefficient K that calculates in step S2 is output to light deterioration rate calculation portion 22.In light deterioration rate calculation portion 22,, obtain light deterioration rate D then corresponding to the light deterioration correction coefficient K that exports from deterioration factor calculation portion 21 with reference to the look-up table that is stored in memory circuit 23.

At this, look-up table is described.Figure 10 is the figure that the determination data of the light deterioration correction coefficient K of the light quantity pick-up unit 1 of display device 1000 of the present invention and light deterioration rate D is made curve.Among Figure 10, transverse axis is represented light deterioration correction coefficient K, and the longitudinal axis is represented light deterioration rate D.When deterioration was carried out, light deterioration correction coefficient K and light deterioration rate D can reduce.Thereby the slippage of light deterioration rate D will become big along with the decline of light deterioration correction coefficient K.

But when light deterioration correction coefficient K is about 0.6 when following, light deterioration rate D will be steady state value.This shows that the 2nd photocurrent Ibb will can not change again after deterioration proceeds to a certain degree.

The function curve 500 that Figure 10 represents is based on determination data, is the function of the light deterioration rate D of parameter with light deterioration correction coefficient K.If can in light deterioration rate calculation portion 22, form the circuit of realizing this function, just can calculate out light deterioration rate D corresponding to certain light deterioration correction coefficient K.But if will realize this type of random function by circuit structure, then circuit structure can be very complicated.At this, in the present embodiment, make based on function curve 500, with light deterioration correction coefficient K and the corresponding mutually look-up table of light deterioration rate D, be stored in the memory circuit 23.

Thus, do not need to calculate the required complicated circuit of light deterioration rate D, can dwindle circuit scale.

If the data volume that need dwindle the look-up table that is stored in memory circuit 23, the look-up table that then value of light deterioration correction coefficient K is stored as 0.2 scale gets final product.When the value of light deterioration correction coefficient K is not comprised in look-up table, utilizes neighbour's data to carry out interpolation calculation, thereby even also can derive light deterioration rate D when not being included in look-up table from light deterioration correction coefficient K.

For example, select point from the function curve 500 of Figure 10, thereby connect these 2 the light deterioration rate D that determine corresponding to the light deterioration correction coefficient K that is not included in look-up table with straight line corresponding to the value of 2 light deterioration correction coefficient K of the value that clips certain light deterioration correction coefficient K.Be specially, when the value of light deterioration correction coefficient K is 0.3, just can derive light deterioration rate D according to mean value corresponding to the light deterioration rate D of the value 0.2 of light deterioration correction coefficient K and 0.4.

Then continue Fig. 9 is described.In step S4, according to the light deterioration rate D that transmits from light deterioration rate calculation portion 22, the 2nd photocurrent Ibb (L1/n) after 24 pairs of deteriorations of light signal efferent proofreaies and correct, and calculates the 2nd photocurrent Ib (L1/n) of original state by calculation.Then in step S5 with the 2nd photocurrent Ib (L1/n) of original state light amount signal S output as incident light.

According to having the as above display device of the light quantity pick-up unit 1 of structure, can obtain following effect.

Owing to be a kind ofly to possess, proofread and correct and obtain the light quantity pick-up unit of luminous sensitivity calibration function of the 2nd photocurrent Ib (L) of original state according to light deterioration correction coefficient K and light deterioration rate D the 2nd photocurrent Ibb (L) after to deterioration, so also can export correct light amount signal S because of being exposed to the deterioration that causes in the light even take place.

And, in the 1st, the 2nd

optical detection part

10a, 10b, use the photo-electric conversion element can promote degradation characteristic, so the manufacturing process of driving transistors that can shared display device.Therefore, just optical sensor can be made, manufacturing cost can be reduced by simple operation.

By look-up table being stored in memory circuit 23, thereby do not need to calculate the required complicated circuit of light deterioration rate D, thus may command power consumption, reduce circuit area, reduce manufacturing cost.

When the value of the light deterioration correction coefficient K that calculates out is not comprised in look-up table, carries out interpolation calculating and can derive light deterioration rate D according to light deterioration rate D corresponding to two light deterioration correction coefficient K that clip this light deterioration correction coefficient K.Thus, can dwindle look-up table, the control data amount.

In the present embodiment, though the 2nd photocurrent Ib (L) of the 2nd optical detection circuit LS2 original state that will calculate by calculation as light amount signal S, also can be with the 1st photocurrent Ia (L) of the 1st optical detection circuit LS1 original state as light amount signal S.At this moment, will make light deterioration correction coefficient K, with light deterioration rate Da promptly the corresponding look-up table of ratio of the 1st photocurrent Ia (L) of the 1st photocurrent Iaa (L) of the mensuration of the 1st optical detection circuit LS1 and original state store in the memory circuit 23 and get final product.Thus, by calculation Ia (L)=Iaa (L)/Da, the 1st photocurrent Iaa that measures can be corrected into the 1st photocurrent Ia of original state.

In the light quantity pick-up unit 1 of present embodiment, can METHOD FOR CONTINUOUS DETERMINATION every the incident light quantity L of specified time limit.When carrying out next one mensuration, make TFT100,200 become conducting state thereby on gate terminal 190, apply current potential Vg, make the current potential discharge of capacitor 110,210.And then make capacitor 110,210 charge to current potential Vs to measure.

Light quantity pick-up unit 1 is connected with not shown backlight, and the light amount signal of the external ambient light of measuring in light quantity pick-up unit 1 outputs to backlight.Backlight is adjusted luminous quantity according to the light amount signal from light quantity pick-up unit 1.Be specially, under the bright situation of the surround lighting of by day natural light etc., set for the luminous quantity of backlight bigger.Otherwise when using under the dark environment night etc., set for the luminous quantity of backlight lower.Thus, can carry out image with the luminous quantity that is fit to institute's environment for use shows.

Though only liquid crystal indicator is illustrated at this,, also can be applied in display device such as following display panel: organic El device; Twist Ball display panel, it uses the Twist Ball that the viewing area is divided with not homochromy coating area with each opposed polarity zone as electro-optical substance; Ink powder (toner) display panel, it uses powdered black ink as electro-optical substance; Plasmia indicating panel; It uses the gases at high pressure of helium, neon etc. as electro-optical substance.

In the above-mentioned embodiment, though as one the example to colored filter 250 as the dimmer arrangement that the light that incides optical sensor is carried out dim light, the structure that is arranged on the 2nd optical detection part 10b is illustrated, the structure of dimmer arrangement is not limited thereto.Below, will other example of dimmer arrangement be described.

[structure example 1 of dimmer arrangement]

According to circuit structure diagram shown in Figure 11, the structure example 1 of dimmer arrangement is described.Wherein, the structure identical with the foregoing description 1 used identical symbol and omitted its explanation, only different structures described.

As shown in figure 11, the 1st optical detection circuit LS1 of the 1st optical detection part 10a has the various elements of the thin film transistor (TFT) 100 (being designated hereinafter simply as " TFT100 ") that comprises as the 1st optical sensor.

The light inlet side of TFT100 is provided with the colored filter 530 as the 1st dimmer arrangement.Colored filter 530 is formed on when overlooking and the TFT100 overlapping areas.The light that incides colored filter 530 can be by colored filter 530 employed look material dim lights.Thus, be incident to TFT100 by the light of colored filter 530 dim lights.Then, TFT100 is to being detected by the light of dim light.

The 2nd optical detection circuit LS2 of the 2nd optical detection part 10b has the various elements of the thin film transistor (TFT) 200 that comprises as the 2nd inductor (be designated hereinafter simply as " TFT200).The light inlet side of TFT200 is provided with the colored filter 550 as the 2nd dimmer arrangement.Colored filter 550 is formed on when overlooking and the TFT200 overlapping areas.The light that incides colored filter 550 can be by colored filter 550 employed look material dim lights.Thus, be incident to TFT200 by the light of colored filter 550 dim lights.Then, TFT200 is to being detected by the light of dim light.

This colored filter 550 forms the slip (light extinction rate) of its incident light greater than colored filter 530.Can be thicker than colored filter 530 by the thickness of colored filter 550 is made, perhaps colored filter 550 employed look concentration of material furnishings are increased the slip of incident light than methods such as colored filter 530 employed look materials are dense.So, be set as greater than colored filter 530 by slip with colored filter 550 incident lights, thus the luminous sensitivity calibration function that illustrates in applicable above-mentioned the 1st embodiment.

And colored filter 530 and colored filter 550 are preferably the relative spectral transmitance and equate, for example can realize by using congener look material etc.

As mentioned above, be set as by relative spectral transmitance two dimmer arrangement colored filters 530,550 equal, thereby can suppress the TFT100 that the difference because of incident light takes place, the deviation of 200 light deterioration amount.This is to incide TFT100 because light deterioration amount depends on, the spectral characteristic of 200 light and TFT100, the product of 200 spectrum sensitivity is so can suppress the deviation of the light deterioration amount that the difference because of incident light takes place by the dimmer arrangement that uses the relative spectral transmitance to equate.Therefore, can provide the display device that to carry out stable correction.

For the relative spectral transmitance is equated, other example of dimmer arrangement as described later also can be by using the shading member to realize as dimmer arrangement.

Thus, can reduce and incide, thereby can postpone the light degradation speed of TFT100 and TFT200 respectively as the TFT100 of the 1st optical sensor with as the light quantity of the TFT200 of the 2nd optical sensor.So can prolong because TFT100, the light deterioration takes place respectively in TFT200, the ratio of the 1st output signal and the 2nd output signal no longer change so that cause fully proofreading and correct till time.

Figure 12 incides under the situation of two optical sensors for the light of dim light and the light of dim light only incides the passing of the mensuration ratio of the 1st output signal under the situation of an optical sensor and the 2nd output signal.As shown in figure 12, when the light quantity of TFT100 and TFT200 is incided in minimizing (curve 2), 10 * 10 ⁶(Lxh) Yi Xia ratio will no longer change.When only reducing the light quantity that incides TFT200 wherein (curve 1), 2 * 10 ⁶(Lxh) Yi Xia ratio will no longer change.That is, the situation that reduces the light quantity that incides TFT100 and TFT200 has about 5 times correction life-span than the situation that only reduces the light quantity that incides TFT200 wherein.Therefore, then can provide the display device that can prolong the correction life-span according to this structure.

[structure example 2 of dimmer arrangement]

According to circuit structure diagram shown in Figure 13, the example 2 of dimmer arrangement structure is described.Wherein, the structure identical with the foregoing description 1 used identical symbol and omitted its explanation, only different structures described.

As shown in figure 13, the 1st optical detection circuit LS1 of the 1st optical detection part 10a has the various elements (omitting explanation) of the thin film transistor (TFT) 100 (being designated hereinafter simply as " TFT100 ") that comprises as the 1st optical sensor.

On the light inlet side of TFT100 dimmer arrangement is not set, TFT100 detects the light of dim light not.

The 2nd optical detection circuit LS2 of the 2nd optical detection part 10b has the various elements (omitting explanation) of the thin film transistor (TFT) 200 that comprises as the 2nd inductor (be designated hereinafter simply as " TFT200).Be provided with black matrix 660 as shading member member on the light inlet side of TFT200.Black matrix 660 is formed on when overlooking and the TFT200 overlapping areas.In this example, the black matrix 660 of shading member constitutes dimmer arrangement.Black matrix 660 is formed on the layer identical with not shown coloured filter by the shading member of black resin etc.Should be formed with peristome 670 on the black matrix 660.

Light towards TFT200 is deceived matrix 660 shadings, only passes through from peristome 670.Therefore the light quantity of passing through will reduce.That is, the black matrix 660 with peristome 670 is used as dimmer arrangement.Thus, because of being incided TFT200 by the light of dim light by black matrix 660.Then, TFT200 will detect this light by dim light.

According to this example 2, the manufacturing process that the manufacturing process of the black matrix 660 of shading member can the black matrix that shared general display device possessed can make the shading member with simple operation.Therefore, this example 2 employed display device not only have the effect of the 1st embodiment, can also reduce manufacturing cost.

[structure example 3 of dimmer arrangement]

According to circuit structure diagram shown in Figure 14, the structure example 3 of dimmer arrangement is described.Wherein, the structure identical with the foregoing description 1 used identical symbol and omitted its explanation, only different structures described.

As shown in figure 14, the 1st optical detection circuit LS1 of the 1st optical detection part 10a has the various elements (omitting explanation) of the thin film transistor (TFT) 100 (being designated hereinafter simply as " TFT100 ") that comprises as the 1st optical sensor.The light inlet side of TFT100 is provided with the colored filter 730 as the 1st dimmer arrangement.Colored filter 730 is formed on when overlooking and the TFT100 overlapping areas.Thus, to TFT100 incident by the light of colored filter 730 dim lights.Then, TFT100 is to being detected by the light of dim light.

The 2nd optical detection circuit LS2 of the 2nd optical detection part 10b has the various elements of the thin film transistor (TFT) 200 that comprises as the 2nd inductor (be designated hereinafter simply as " TFT200).Be provided with dim light member colored filter 750 and the black matrix of being located on colored filter 750 light inlet sides 760 as the 2nd dimmer arrangement on the light inlet side of TFT200 as the shading member.Colored filter 750 is formed on when overlooking and the TFT200 overlapping areas with black matrix 760.Black matrix 760 is formed on the substrate of colored filter 750, is formed by the shading member of black resin etc.Should be formed with peristome 770 on the black matrix 760.

Towards the light of TFT200 at first by being formed on peristome 770 on the black matrix 760 part by dim light, and then by colored filter 750 further by dim light.As mentioned above, TFT200 detects by the dual light that the 2nd dimmer arrangement institute dim light of shading member and dim light member is set.

And, the dim light member that can use as dimmer arrangement and the manufacturing process of shading member, with manufacturing process's universalization of general display device, can be with simple operation manufacturing dimmer arrangement.

In addition, as dimmer arrangement configuration dim light member and shading member, being not limited to above-mentioned embodiment or example of structure, also can be other combination.

Though colored filter is illustrated as dimmer arrangement, be not limited thereto, use the dim light member of the energy dim light of Polarizer or polarizer etc., also can obtain identical effect.

[Change Example]

In the above-mentioned embodiment, with i.e. the 1st output signal Sa of the current potential of capacitor 110 electrodes 111 of the 1st optical detection circuit LS1, with i.e. the 2nd output signal Sb of the current potential of capacitor 210 electrodes 211 of the 2nd optical detection circuit LS2, in deterioration factor calculation portion 21, converted photocurrent to.And in this Change Example, electrode 211 current potentials that the 1st output signal Sa and the 2nd output signal Sb converted to electrode 111 current potentials of capacitor 110 and capacitor 210 are reduced to the required time till the Vc from Vs, thereby luminous sensitivity is proofreaied and correct.

At this, the bearing calibration of present embodiment Change Example is described.

Figure 15 represents, when the incident light of incident light quantity L1 incides the 1st optical detection device LS1, when the incident light of incident light quantity L1/n incides the 2nd optical detection device LS2, be charged to capacitor 110,210 current potential through the time figure that changes.Among Figure 15, the longitudinal axis is represented the capacitor current potential, and transverse axis is represented from measuring beginning institute elapsed time.Among Figure 15, the current potential of the electrode 111 of the 1st optical detection circuit LS1 capacitor 110 of function curve Va (t) expression original state through the time change, the current potential of the electrode 211 of the capacitor 210 of the 2nd optical detection circuit LS2 of function curve Vb (t) expression original state through the time change, the current potential of the electrode 111 of the capacitor of measuring after function curve Vaa (t) the expression deterioration 110 through the time change, the current potential of the electrode 211 of the capacitor of measuring after function curve Vbb (t) the expression deterioration 210 through the time change.These curves are along with descending through overpotential of time becomes slowly that reason is, between the source portion 101 and drain portion 102 of the 1st optical sensor TFT100, and the source portion 201 of the 2nd optical sensor TFT200 and the potential difference (PD) between the drain portion 202 are when reducing, circulation is at TFT100,200 photocurrent also reduces, thereby current potential decline needs the more time.

Current potential ta1 fall time of Figure 15 represents the time till the current potential Va of capacitor 110 of the 1st optical detection circuit LS1 of original state drops to current potential Vc, and current potential tb1 fall time represents the time till the current potential Vb of capacitor 210 of the 2nd optical detection circuit LS2 of original state drops to current potential Vc.Current potential taa1 fall time represents the time till the current potential Vaa of the capacitor 110 measured after the deterioration drops to current potential Vc, and current potential tbb1 fall time represents the time till the current potential Vbb of the capacitor 210 measured after the deterioration drops to current potential Vc.

The incident light light quantity of the 1st optical detection circuit LS1 is greater than the light quantity of the dim light incident light of the 2nd optical detection circuit LS2 with dimmer arrangement, so the Leakage Current on the TFT100 is greater than the leakage current on the TFT200.And the luminous sensitivity of original state is higher than because of being exposed to the luminous sensitivity after the deterioration in the light, and the leakage current of original state is bigger.Therefore, the current potential of the 1st optical detection circuit LS1 of original state is the shortest fall time.

And the integrating light quantity of TFT100 is more than TFT200, so its deterioration is also very fast.Therefore, the 1st optical detection circuit LS1's, bigger with respect to current potential amplitude of variation fall time after the deterioration of original state.

The current potential of capacitor and the relation of current potential between fall time, identical with relation between photocurrent and the incident light quantity, so measure with respect to the L0 of regulation incident light quantity in advance, current potential ta0 fall time, the tb0 of original state obtain initially than ta0/tb0.

Then, calculate out mensuration than (taa1/tbb1) from current potential taa1 fall time that measures with current potential tbb1 fall time.

Therefore, can with measure than (taa1/tbb1) be that the light deterioration correction coefficient Kt of present embodiment Change Example is expressed as Kt=(taa1/tbb1)/(ta0/tb0) initially than the ratio of (ta0/tb0).

The light deterioration rate Dt of present embodiment Change Example then, is described.The ratio defined of current potential tbb1 fall time of the 2nd optical detection circuit LS2 of light deterioration rate Dt after by current potential tb1 fall time of the 2nd optical detection circuit LS2 of original state and deterioration is expressed as Dt=tbb1/tb1.

As making light deterioration correction coefficient K corresponding in the present embodiment, can make light deterioration correction coefficient Kt corresponding with light deterioration rate Dt with light deterioration rate.It is corresponding with light deterioration rate Dt then look-up table to be changed over light deterioration correction coefficient Kt.

Thus, can obtain light deterioration rate Dt from light deterioration correction coefficient Kt, can calculate the capacitor 210 of original state current potential tb1 fall time (=tbb1/Dt).Thereby with the light amount signal S output of this current potential tb1 fall time as incident light.

Then, the running to the light quantity pick-up unit 1 of present embodiment Change Example describes.The operation workflow figure of present embodiment Change Example is identical with Fig. 9.

At first, in step S1, capacitor 110,210 is charged to current potential Vs.Shine the incident light of incident light quantity L1 then to TFT100, and, make it produce leakage current to the dim light incident light that TFT200 shines incident light quantity L1/n.Then, as the 1st output signal Sa, the current potential of capacitor 210 electrodes 211 outputs to deterioration factor calculation portion 21 as the 2nd output signal Sb with the current potential of capacitor 110 electrodes 111.In deterioration factor calculation portion 21, detect the electric potential signal of the 1st output signal Sa, the 2nd output signal Sb, convert current potential to and drop to required current potential fall time till the Vc.By so, obtain current potential taa1 fall time, current potential tbb1 fall time of the 2nd optical detection circuit LS2 of the 1st testing circuit LS1 that measures after the deterioration, measure than (taa1/tbb1) from these current potentials calculations fall time then.

In addition, current potential tbb1 fall time with the 2nd optical detection circuit LS2 after the deterioration outputs to light signal efferent 24.

Enter step S2, will be stored in initially reading in the deterioration factor calculation portion 21 in the memory circuit 23 than (ta0/tb0) thereafter, calculation light deterioration correction coefficient Kt (=(taa1/tbb1)/(ta0/tb0)).Then this light deterioration correction coefficient Kt is outputed to light deterioration rate calculation portion 22.

Should be initially than being in original state, to be the incident light of L0 to the 1st optical detection circuit LS1 incident light quantity, be the current potential fall time under the situation of incident light of L0/n to the 2nd optical detection circuit LS2 incident light quantity.Be ta0 current potential fall time of the 1st optical detection circuit LS1, and be tb0 current potential fall time of the 2nd optical detection circuit LS2.

Enter step S3 thereafter.Among the step S3, in light deterioration rate calculation portion 22,, obtain light deterioration rate Dt corresponding to the light deterioration correction coefficient Kt that exports from deterioration factor calculation portion 21 with reference to the light deterioration correction coefficient Kt and the corresponding look-up table of light deterioration rate Dt that are stored in memory circuit 23.Then, the light deterioration rate Dt that obtains is outputed to light signal efferent 24.

In step S4, light signal efferent 24 bases are from the light deterioration rate Dt of light deterioration rate calculation portion 22 and current potential tbb1 fall time that exports from deterioration factor calculation portion 21, calculate out original state current potential tb1 fall time (=tbb1/Dt), and proofread and correct current potential tbb1 fall time after the deterioration.Then in step S5, current potential tb1 fall time of original state is exported as incident light quantity signal S.

As above explanation, by converting the current potential fall time of capacitor 110,210 from output signal Sa, the Sb of the 1st, the 2nd

optical detection part

10a, 10b to, the luminous sensitivity in the time of also carrying out the light deterioration is proofreaied and correct.

[embodiment 2]

Below embodiment 2 is described.In embodiment 2, will convert photocurrent to, perform calculations after converting this photocurrent to logarithm then from the electric potential signal that the 1st, the 2nd

optical detection part

10a, 10b output to optical sensor reading part 20.

At first explanation utilizes the calculation method of log-transformation.The light deterioration correction coefficient K of embodiment 1 is carried out log-transformation then to be become: Log2K=Log2{ (Iaa (L1)/Ibb (L1/n))/(Ia (L0)/Ib (L0/n)) }=(Log2 ((Iaa (L1))-Log2 (Ibb (L1/n)))-(Log2 (Ia (L0))-(Log2 (Ib (L0/n))).

Light deterioration rate D is carried out the logarithm log-transformation then to be become: Log2D=Log2 (Ibb (L1/n)/Ib (L1/n))=Log2 (Ibb (L1/n))-Log2 (Ib (L1/n)).

Therefore, can convert multiplication and division to addition and subtraction by log-transformation.

Thus, can be from carrying out the light deterioration correction coefficient Log2K that log-transformation obtains and carrying out the Log2D that log-transformation is obtained, by Log2 (Ib (L1/n))=Log2 (Ibb (L1/n))-Log2D, calculate out the photocurrent Log2 that carries out log-transformation (Ib (L1/n)) of original state.

Then this is carried out the photocurrent Log2 (Ib) after the log-transformation and converted real number to, thus the 2nd photocurrent Ib (L1/n) (=Ibb (L1/n)/D) of calculation original state.The 2nd photocurrent Ib of the original state as above obtained is exported as incident light light amount signal S.

Then, the running to the light quantity pick-up unit 1 of the display device 1000 of embodiment 2 describes.

Figure 16 is the process flow diagram that the photocurrent of embodiment 2 is proofreaied and correct.Among Figure 16, have: will convert the 1st photocurrent Iaa, the 2nd photocurrent Ibb to from the 1st output signal Sa and the 2nd output signal Sb of the 1st, the 2nd

optical detection part

10a, 10b, and again they be carried out the step S11 of log-transformation; Calculation is through the step S12 of the mensuration ratio after the log-transformation; Read through the initial ratio after the log-transformation from memory circuit 23 and to calculate step S13 again through the light deterioration correction coefficient Log2K after the log-transformation; The pairing step S14 of light deterioration correction coefficient Log2K after the process log-transformation that reads and try to achieve from memory circuit 23 through the light deterioration rate Log2D after the log-transformation; Light deterioration rate Log2D after the process log-transformation that reads from memory circuit 23 calculates out the step S15 through the photocurrent Log2 (Ib) after the log-transformation; To convert the step S16 of real number through the photocurrent Log2 (Ib) after the log-transformation to; With the step S17 of the 2nd photocurrent Ib that will be transformed into real number as light amount signal S output.

In the memory circuit 23 of embodiment 2, store through log-transformation initially than Log2 (Ia (L0))-Log2 (Ib (L0/n)).Also store the corresponding look-up table of light deterioration rate Log2D that makes through light deterioration correction coefficient Log2K after the log-transformation and process log-transformation.

In step S11, deterioration factor calculation portion 21, the 1st output signal Sa and the 2nd output signal Sb from the 1st, the 2nd

optical detection part

10a, 10b output, obtain the 1st photocurrent Iaa (L1), the 2nd photocurrent Ibb (L1/n) after the deterioration of certain incident light quantity L1, then the 1st photocurrent Iaa (L1), the 2nd photocurrent Ibb (L1/n) are carried out to number conversion calculation Log2 (Iaa (L1)), Log2 (Ibb (L1/n)).

And, will output to light signal efferent 24 through the 2nd photocurrent Log2 (Ibb (L1/n)) of log-transformation.

Thereafter enter step S12, in deterioration factor calculation portion 21, the mensuration of calculation process log-transformation is than Log2 (Iaa (L1))-Log2 (Ibb (L1/n)).

Enter step S13 thereafter, in deterioration factor calculation portion 21, from memory circuit 23 read through log-transformation initially than Log2 (Ia (L0))-Log2 (Ib (L0/n)), calculation is through light deterioration correction coefficient Log2K=(Log2 (Iaa (L1))-Log2 (Ibb (L1/n)))-(Log2 (Ia (L0))-(Log2 (Ib (L0/n))) of log-transformation.

Enter step S14, the light deterioration correction coefficient Log2K of the process log-transformation that will calculate in step S13 outputs to light deterioration calculation portion 22 from deterioration factor calculation portion 21.Then, in light deterioration calculation portion 22, will output to memory circuit 23 from the light deterioration correction coefficient Log2K of the process log-transformation of deterioration factor calculation portion 21 output.In memory circuit 23, from look-up table select corresponding to from 22 outputs of light deterioration calculation portion through the light deterioration correction coefficient Log2K of log-transformation, through the light deterioration rate Log2D of log-transformation, and output to light deterioration calculation portion 22.Light deterioration calculation portion 22 will output to light signal efferent 24 from the light deterioration rate Log2D of the process log-transformation of memory circuit 23 output.

Enter step S15, in light signal efferent 24, according to the light deterioration rate Log2D of the process log-transformation of exporting from memory circuit 23 and the logarithm photocurrent Log2 (Ibb (L1/n)) that exports from deterioration factor calculation portion 21, logarithm photocurrent Log2 (Ib (L1/n)) (=Log2 (Ibb (L1/n)-Log2D) that calculates out original state.

Enter step S16, in light signal efferent 24, convert the light deterioration rate Log2Ib of the process log-transformation of original state to real number, and the 2nd current Ib (L1/n) (=Ibb ((L1/n)/D) of calculation original state.

In step S17, the 2nd current Ib of the original state that will calculate in step 16 is as the incident light quantity L light amount signal S output of incident light.

Can obtain following effect according to embodiment 2.

By utilizing the calculation of log-transformation, convert multiplication and division to addition and subtraction, thereby can dwindle circuit structure.Thus, can reduce circuit area, reduce manufacturing cost.Can also suppress power consumption.

And, as illustrated among the embodiment 1, can drop to the required time till the Vc from Vs with being input to the 1st output signal Sa of optical sensor reading part 20 and current potential that the 2nd output signal Sb converts capacitor 110,210 to, and convert logarithm to, calculate the light amount signal S line output of going forward side by side by calculation.

In the present embodiment, the mensuration of the incident light quantity L of light quantity pick-up unit 1 is carried out every the stipulated time section.When carrying out next one mensuration, by applying current potential Vg TFT100,200 is become conducting state to gate terminal 190, make the current potential discharge of capacitor 110,210.And then, measure to capacitor 110,210 charging potential Vs.

At this, use Figure 17～19, adopt the configuration example 3 of the configuration example 1～optical detection part of optical detection part, the configuration of the 1st optical detection part and the 2nd optical detection part is described.Wherein, the structure that illustrated in embodiment etc. is used identical symbol and is omitted its explanation.

(the configuration example 1 of optical detection part)

The configuration example 1 of the 1st optical detection part and the 2nd optical detection part is described with Figure 17.Figure 17 is the vertical view of the configuration example 1 of expression the 1st optical detection part and the 2nd optical detection part.As shown in figure 17, array substrate AR is provided with viewing area DA, and it has neighboring DA (a), DA (b), DA (c), DA (d), and disposes a plurality of pixels 400.Be equipped with the 2nd optical detection part 10b along each neighboring DA (a), DA (b), DA (c) respectively on the neighboring DA (a) of viewing area DA, DA (b), the DA (c).On the outside of the 2nd optical detection part 10b (with viewing area DA opposition side), roughly dispose the 1st optical detection part 10a side by side along the 2nd optical detection part 10b.And the 1st optical detection part 10a and the 2nd optical detection part 10b are not limited in along above-mentioned 3 neighboring DA (a), DA (b), DA (c) and are provided with, as long as at least one neighboring in neighboring DA (a), DA (b), DA (c) is provided with

According to this configuration example 1, can with the viewing area adjoining position on carry out light and detect, can improve accuracy of detection.And, can suppress the characteristic deviation of the 1st optical sensor (not shown) and the 2nd optical sensor (not shown) by being set up in parallel the 1st optical detection part 10a and the 2nd optical detection part 10b, further improve accuracy of detection.

And the 1st optical detection part 10a and the 2nd optical detection part 10b also can followingly dispose, and promptly set the 1st optical detection part 10a along neighboring DA (a), DA (b), DA (c), dispose the 2nd optical detection part 10b along the outside of the 1st optical detection part 10a.This configuration can be obtained identical effect equally.

(the configuration example 2 of optical detection part)

The configuration example 2 of the 1st optical detection part and the 2nd optical detection part is described with Figure 18.Figure 18 is the vertical view of the configuration example 2 of expression the 1st optical detection part and the 2nd optical detection part.As shown in figure 18, array substrate AR is provided with viewing area DA, and it has neighboring DA (a), DA (b), DA (c), DA (d), and disposes a plurality of pixels 400.Respectively along each neighboring DA (a), DA (b), DA (c), the 1st optical detection part 10a and the 2nd optical detection part 10b are disposed mutually across on the neighboring DA (a) of viewing area DA, DA (b), the DA (c).Only be an example wherein at the number of the 1st optical detection part 10a shown in Figure 180 and the 2nd optical detection part 10b, number separately is unrestricted.

According to the structure of this configuration example 2, can with viewing area DA adjoining position on carry out light and detect, can improve accuracy of detection.And, can suppress light quantity deviation by the 1st optical detection part 10a and the 2nd optical detection part 10b are set mutually across, reduce the deterioration deviation of the 1st optical sensor and the 2nd optical sensor to the 1st optical sensor (not shown) and the 2nd optical sensor (not shown) irradiation.

(the configuration example 3 of optical detection part)

The configuration example 3 of the 1st optical detection part and the 2nd optical detection part is described with Figure 19.Figure 19 is the vertical view of the configuration example 3 of expression the 1st optical detection part and the 2nd optical detection part.As shown in figure 19, array substrate AR is provided with the viewing area DA that has disposed a plurality of pixels 400.On the part (being centre end in this example) of each pixel 400, dispose the 1st optical detection part 10a or the 2nd optical detection part 10b.And, in the column or row of pixel 400, be preferably the 1st optical detection part 10a and the mutual cross-over configuration of the 2nd optical detection part 10b on each pixel 400.Also the 1st optical detection part 10a and the 2nd optical detection part 10b can be set respectively on independent pixel 400.

Example 3, the 1 optical detection part 10a are set or the 2nd optical detection part 10b is configured on the part of pixel 400 according to this, therefore the 1st optical sensor (not shown) and the 2nd optical sensor (not shown) can directly detect the light quantity that shines the viewing area.So, can not only obtain the effect of described configuration example 1,2, and further improve accuracy of detection.

Claims

1. a display device has the viewing area that possesses the on-off element corresponding with each pixel on substrate, it is characterized in that, comprising:

The light quantity pick-up unit comprises: the 1st optical detection part, and it possesses the 1st optical sensor; The 2nd optical detection part, it possesses the 2nd optical sensor; The optical sensor reading part, described light quantity pick-up unit will be exported as light amount signal by described the 1st optical detection part and the detected light quantity of described the 2nd optical detection part;

Dimmer arrangement, it is formed on the zone that is superimposed in described the 1st optical sensor or described the 2nd optical sensor at least one when overlooking, and makes that to incide described the 1st optical sensor different with the incident light quantity of the 2nd optical sensor; And,

Described the 1st optical detection part has the 1st optical detection circuit, and the 1st optical detection circuit will output to described optical sensor reading part based on the 1st output signal of the incident light that incides the 1st optical sensor;

Described the 2nd optical detection part has the 2nd optical detection circuit, and the 2nd optical detection circuit will output to described optical sensor reading part based on the 2nd output signal of the incident light that incides the 2nd optical sensor;

Described optical sensor reading part possesses:

Memory circuit, storage is as the initial ratio and the look-up table of the ratio of the 1st photoelectricity flow in the original state and the 2nd photoelectricity flow, this look-up table is with light deterioration correction coefficient and light deterioration rate correspondence, and this light deterioration rate is the ratio of the 2nd photoelectricity flow of the 2nd photoelectricity flow and original state;

Deterioration factor calculation portion, be connected with the 1st optical detection circuit, the 2nd optical detection circuit and memory circuit, convert described the 1st output signal and described the 2nd output signal to the 1st photoelectricity flow and the 2nd photoelectricity flow as the leakage current of optical sensor, calculation is as the mensuration ratio of the ratio of the 1st photoelectricity flow and the 2nd photoelectricity flow, and calculation is as the light deterioration correction coefficient of the initial ratio that compares of described mensuration ratio and memory circuitry stores, this light deterioration correction coefficient is outputed to light deterioration rate calculation portion, the 2nd photoelectricity flow is outputed to the light signal efferent;

Light deterioration rate calculation portion, portion is connected with memory circuit with the deterioration factor calculation, derives light deterioration rate and outputs to the light signal efferent according to described smooth deterioration correction coefficient and look-up table;

The light signal efferent, be connected with light deterioration rate calculation portion with deterioration factor calculation portion, according to from the 2nd photoelectricity flow of deterioration factor calculation portion output and the 2nd photoelectricity flow that calculates out original state from the light deterioration rate of light deterioration rate calculation portion output, the 2nd photoelectricity flow of this original state is exported as the light amount signal that is equivalent to incident light quantity.

2. display device as claimed in claim 1 is characterized in that having:

The 1st dimmer arrangement, the light quantity of described the 1st optical sensor is incided in its attenuating;

The 2nd dimmer arrangement, the light quantity of described the 2nd optical sensor is incided in its attenuating;

Wherein, the incident light attenuating rate of described the 2nd dimmer arrangement is greater than the incident light attenuating rate of described the 1st dimmer arrangement.

3. display device as claimed in claim 2 is characterized in that, the relative spectral transmitance of described the 1st dimmer arrangement and described the 2nd dimmer arrangement equates.

4. display device as claimed in claim 1 is characterized in that described dimmer arrangement has the shading member, and this shading member covers the part of the light that incides described the 1st optical sensor or described the 2nd optical sensor.

5. display device as claimed in claim 4 is characterized in that, described dimmer arrangement has dim light member and described shading member, and this dim light member carries out dim light to the light that incides described the 1st optical sensor or described the 2nd optical sensor.

6. display device as claimed in claim 5, it is characterized in that, when above-mentioned smooth deterioration correction coefficient was not included on the described look-up table, the described smooth deterioration rate that derives was calculated by the interpolation of having used the described smooth deterioration correction coefficient on the described look-up table by described smooth deterioration rate calculation portion.

7. as any described display device of claim 1 to 6, it is characterized in that described the 1st optical sensor and described the 2nd optical sensor are thin film transistor (TFT), and have the capacitor that the voltage that is applied to described thin film transistor (TFT) two ends is charged.

8. as any described display device of claim 1 to 6, it is characterized in that in described viewing area, possessing the electro-optical substance layer.

9. as any described display device of claim 1 to 5, it is characterized in that, described the 1st optical detection part and described the 2nd optical detection part, the outward flange along described viewing area disposes on one side at least side by side respectively.

10. as any described display device of claim 1 to 5, it is characterized in that described the 1st optical detection part and described the 2nd optical detection part are respectively along the outward flange of described viewing area cross-over configuration mutually on one side at least.

11., it is characterized in that described the 1st optical detection part and described the 2nd optical detection part are configured on the interior part of described pixel as any described display device of claim 1 to 5.

12. display device as claimed in claim 9 is characterized in that, the total of the total of described the 1st optical sensor size and described the 2nd optical sensor size equates.

13., it is characterized in that described dimmer arrangement is colored filter, Polarizer or polarizer as any described display device of claim 1 to 6.

14., it is characterized in that described shading member is black matrix as any described display device of claim 4 to 6.