CN101395730A - Method for the production of peltier modules, and peltier module - Google Patents
Method for the production of peltier modules, and peltier module Download PDFInfo
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- CN101395730A CN101395730A CNA2007800072277A CN200780007227A CN101395730A CN 101395730 A CN101395730 A CN 101395730A CN A2007800072277 A CNA2007800072277 A CN A2007800072277A CN 200780007227 A CN200780007227 A CN 200780007227A CN 101395730 A CN101395730 A CN 101395730A
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Abstract
The invention relates to a method for producing Peltier modules, each of which comprises several Peltier elements that are arranged between at least two substrates. The substrates are made of an electrically insulating material at least on the sides facing the Peltier elements while being provided with contact areas on said surfaces. The contact areas, to which the Peltier elements are connected by means of terminal surfaces during the production process, are formed by metallic areas.
Description
Technical field
The present invention relates to according to the technology of the preamble of claim 1 and according to the peltier module of claim 22 preamble.
Background technology
Manufacturing according to the peltier module of present traditional handicraft is very complicated.And these peltier modules do not have best thermal characteristics.
Known is, utilize so-called DCB (directly copper interconnection technique) technology, make on such as the aluminium oxide ceramics layer and be used to make required metal coatings such as printed conductor, terminal, particularly utilize to form metal or Copper Foil or the metal or the copper foil of metal coating, in the surface of above-mentioned paper tinsel or thin slice one side have metal and the reactant gas compound layer or the coating (fused layers) of---being preferably oxygen---.In this technology, for example described in US-PS37 44 120 or the DP-PS 2,319 854, this layer or this coating (fused layers) form eutectic (eutectic), the fusing point of this eutectic is lower than the fusing point of metal (for example copper), thereby by paper tinsel being placed pottery go up and, can these layers be interconnected by in fact only in the zone of fused layers or oxide skin(coating), metal or copper being melted by all layers of heating.
This DCB technology for example has following operation:
-thereby the Copper Foil oxidation is produced uniform Cu oxide layer;
-on ceramic layer, place Copper Foil;
-will organize mixture to be heated to technological temperature between about 1025 to 1083 ℃, for example about 1071 ℃;
-be cooled to room temperature.
In addition, (DE 22 13 115 for known so-called activated solder technology; EP-A-153 618), metal level or the metal forming that forms metal coating combined with corresponding ceramic material, especially copper layer or Copper Foil are combined with corresponding ceramic material.In this technology that especially also is used for making the metal coating substrate, utilize spelter solder to connect for example metal forming of Copper Foil and the ceramic substrate of for example aluminium nitride ceramics under about 800-1000 ℃ temperature, above-mentioned spelter solder is except that comprising such as also comprising reactive metal copper, silver and/or the golden main component.This reactive metal for example comprises at least one element of the group of Hf, Ti, Zr, Nb, Ce producing connection by chemical reaction between scolder and pottery, connects and be connected to metallic spelter solder between scolder and the metal.
Summary of the invention
The present invention's purpose is to design a kind of technology that can simplify the peltier module manufacturing.For reaching this purpose, designed technology according to claim 1.Claim 22 theme as peltier module.
In the present invention, on terminal one side, Peltier element at least at least a portion is directly carried out to the connection of the contact surface of substrate; And preferably, according to a general execution mode of the present invention, by utilizing the sinter bonded of at least one sinter layer, perhaps according to more general execution mode of the present invention, wherein make corresponding Peltier element by sintering, this element is sintered on the contact surface of substrate.In both cases, for example all pass through directly in sintering on the metallic region (metal level or copper layer) that forms contact surface or sinter bonded or utilize at least one intermediate layer between metallic region and corresponding Peltier element, realize being connected of corresponding Peltier element and contact surface.
An advantage of the present invention is, simplified the manufacturing of peltier module on the one hand significantly, and on the other hand, at least connect as articulamentum directly connecting or have sinter layer, the heat conductivity of the transition between Peltier element and the substrate improves greatly, thereby has significantly improved the action of thermal characteristics and peltier module.
Technology of the present invention is the theme of appended claims.The present invention is described in detail below to utilize the accompanying drawing of embodiment.
Description of drawings
Fig. 1 is the synoptic diagram and the end view of peltier module structure;
Fig. 2 and Fig. 3 have provided the Peltier chip respectively and have been formed at the reduced representation of the multilayer transition between the contact surface on the ceramic substrate according to prior art;
Fig. 4-13 has provided respectively and has utilized the DCB technology to be formed at contact surface on the ceramic substrate and different transition or the connection between the Peltier chip of the present invention;
Figure 14 has provided and has utilized that active welding procedure is made, ceramic substrate and the metal of contact surface or the connection between copper zone (copper pad);
Figure 15 has provided the different operations that peltier module is made;
Figure 16 has provided the enlarged drawing of the Peltier element (Peltier chip) between two contact surfaces;
Figure 17 has provided the simplification diagrammatic sketch that is used to make Peltier element and with the method for sintering process sintering commonly used this element is connected to the technology of contact surface simultaneously.
Figure 18 with similar Fig. 1 mode provided peltier module according to another embodiment of the invention.
Embodiment
Fig. 1 has provided the peltier module of existing structure with simplified way, constitutes in the mode of two tabular ceramic substrate 2, has the structuring metal coating that forms a plurality of contact surfaces 3 separately in the mutual opposed face side of these substrates.
Have a plurality of Peltier chips or Peltier element 4 between contact surface 3, these Peltier elements 4 in series are electrically connected about the outside terminal 5 and 6 of peltier module.For this reason, Peltier element 4 not only is connected to contact surface 3 on the ceramic substrate of contact surface 3 on the ceramic substrate on Fig. 1 top and Fig. 1 bottom respectively by two terminals side, and Peltier element 4 adjacent to each other also interconnects by each contact surface 3 on each ceramic substrate 2, and this is peltier module those skilled in the art's a basic general knowledge.
For simplicity, Fig. 1 has only provided delegation, has four Peltier elements altogether.In fact, perpendicular to the plane among Fig. 1, this peltier module also has into a plurality of Peltier elements 4 of some row and columns, and all Peltier elements 4 in series are electrically connected between terminal 5 and 6, and their polarity is oriented as and makes can flow through all Peltier elements between terminal 5 and 6 of electric current.
Fig. 2 has provided the connection between one of ceramic substrate 2 and Peltier element 4 terminals side, and according to prior art, this is common in peltier module.In order to make contact surface 3, in the prior art, at first apply the structured layer of paste by the paste printing, and in reducing atmosphere, heating above under 1100 ℃ the temperature, wherein, comprise molybdenum, manganese and/or tungsten with form of powder in this paste, this layer is corresponding with the structure of contact surface 3.Produce and the layer 7 that constitutes according to contact surface 3 is for example carrying out nickel plating in the chemical technology then with this.Because in any case, for making the required big electric current of peltier module work, layer 7 does not possess sufficiently high conductivity or enough big cross section, therefore, the metallic region 9 of copper coin form is welded on the nickel coating 7 by slicken solder 8, utilizes slicken solder (solder layer 10) that copper coin and Peltier element 4 are welded then.In order to prevent that copper from diffusing into Peltier element separately, need the extra nickel dam 11 between solder layer and the relevant copper coin 9.Except this known ceramic substrate 2 with form connection between the corresponding contact surface 3 by copper coin 9 in fact, and contact surface and and Peltier element between connection be difficult to make outside, the heat conductivity of this connection is also unsatisfactory, and the action of Peltier element also reduces thus greatly.
Fig. 3 has provided the synoptic diagram of the another kind of syndeton between ceramic substrate 2 and the corresponding Peltier element 4, and wherein contact surface 3 is by forming by the structurized metal coating that directly puts on ceramic substrate 2 with known direct joint technology.The metal coating that forms contact surface 3 for example forms by copper or copper alloy foil at every turn, and subsequently, with after corresponding ceramic substrate 2 combines, this metal coating utilizes conventional art---and for example the mask etching technology is configured to independent contact surface 3.But in this mode, Peltier element 4 also still is connected to the contact surface 3 that is provided with nickel dam 11 by the soft soldering bed of material 10.DCB between contact surface 3 and the corresponding ceramic substrate 2 connects the thermal behavior that has improved relevant peltier module really, but the soft soldering bed of material 10 remains disadvantageous.
Fig. 4 has provided the connection proposed by the invention between contact surface 3 and the Peltier element 4, and this connection is marked as 12 in the drawings.Contact surface 3 in the present embodiment is formed by the metallic region 9 of structuring metal coating, the structurized copper or the copper alloy foil that for example utilize DCB technology to combine with ceramic substrate 2 two-dimensionally.Ceramic substrate for example is aluminium oxide (Al
2O
3) pottery, have the aluminium oxide ceramics (Al of zirconia additive
2O
3+ ZrO
2), aluminium nitride (AlN) pottery or silicon nitride (Si
2N
4) pottery.The thickness of ceramic substrate 2 is for example between 0.2～1.2mm.The thickness of the metal coating of formation contact surface 3 is for example between 0.1～1.0mm.
Contact surface 3 for example is connected to the terminals side (diffusing on the Peltier element to prevent copper) of corresponding Peltier element 4 by the nickel intermediate layer 13 of thickness between 1～10 μ m.But fundamentally intermediate layer 13 can be omitted.The particularity of connection 12 is without slicken solder directly to result between Peltier element 4 and the contact surface 3.
Fig. 5 has provided another and has connected 12a, and it is different from connection 12 parts and only is to also have thickness another au intermediate layer 14 at 0.01～1.5 μ m basically between nickel intermediate layer 13 and Peltier element 4.
Fig. 6 has provided connection 12b, it is different from connection 12 parts and is, the sinter layer 15 that has the metal sintering material between the terminals side of nickel intermediate layer 13 and Peltier element, Peltier element are electrically connected and are thermally coupled to the intermediate layer 13 of respective areas of contact 3 or this contact surface through this sinter layer 15.Sinter layer is formed into has the thickness of scope between 10～20 μ m.The metal sintering material, for example copper, silver, Kufil are suitable for this sinter layer.In addition, agglomerated material also comprises other compositions, especially increases the material of agglutinating property and/or reduction sintering temperature.For example, tin is one of this kind composition.
Being connected between sinter layer 15 and Peltier element 4 and the contact surface 3, by one of the surface that will connect being applied the powdery agglomerated material or comprising the disperse means or the nano-diffusion agent of this material, and under given sintering pressure, be heated to sintering temperature subsequently, for example be heated to the sintering temperature (sic) of the fusing point that is lower than the Peltier material that forms corresponding Peltier element.
Fig. 7 has provided the connection 12c as another execution mode, it is different from connection 12b part and only is, between nickel intermediate layer 13 and sinter layer 15, has au intermediate layer 14, in this embodiment, therefore nickel dam has the thickness of 1～10 μ m, and the gold layer has the thickness of scope between 0.01～15 μ m.
Fig. 8 has provided the connection 12d as another execution mode, and it is different from connection 12c part and is to have another nickel intermediate layer 16 between sinter layer 15 and Peltier element 4, and it has the thickness of 1-10 μ m.
Fig. 9 has provided connection 12e, and it is different from connection 12d part and is to have au intermediate layer 17 between nickel intermediate layer 16 and sinter layer 15, and its thickness for example is 0.01～1.5 μ m.
Figure 10 has provided and has been connected the corresponding connection of 12e 12f, and au intermediate layer 14 is omitted in any case.
Figure 11 has provided connection, and wherein the intermediate layer 13 of nickel is omitted, thereby sinter layer 15 metallic region 9 direct and respective areas of contact 3 or formation contact surface 3 are adjacent.
Figure 12 has provided connection 12h, and it is different from connection 12g part and is that au intermediate layer 17 is omitted.
Figure 13 has provided connection 12i at last, wherein respective areas of contact 13 through sinter layer 15 directly and Peltier element 4 adjacent.
In the execution mode of Fig. 4～13, contact surface 3 and metallic region 9 form by utilizing DCB technology that structurized metal coating 3 is put on corresponding ceramic substrate 2 respectively; According to Figure 14, can also promptly pass through activated solder layer 18 by active welding, the metal coating that will form contact surface 3 and metallic region 9 is connected to corresponding ceramic substrate.Activated solder layer 18 comprises the alloy of suitable spelter solder well known by persons skilled in the art, for example has the copper-silver alloy of activated solder composition such as titanium, hafnium, zirconium etc.The thickness of activated solder layer is 1～20 μ m.So by activity be welded to connect to the contact surface 3 of corresponding ceramic substrate 2 can be with various connection, for example with connect 12, the mode of 12a～12i, be connected to corresponding Peltier element similarly.
Figure 15 illustration utilize above-mentioned transition 12,12a-12i to prepare the more detailed process of peltier module 1, wherein the Peltier wafer of making in a suitable manner is divided into single Peltier element 4, these elements through connect 12 or one of 12a～12i be attached to the contact surface 3 of ceramic substrate 2, make in the relevant connection of each contact surface 3 and have Peltier element 4---especially simultaneously on all contact surfaces 3 of a ceramic substrate 2,---with identical electricity direction or identical polarity.Then,, will stack mutually, and make Peltier element 4 in series be electrically connected by contact surface 13 as the position a of Figure 15 and two ceramic substrate that Peltier element 4 is installed in advance shown in the b according to the position c of Figure 15.The free end by putting on Peltier element 4 or the solder layer 19 of terminals side, Peltier element 4 utilizes its terminals side to be connected on each ceramic substrate 2, and this terminals side does not form and contacts the contact surface 3 that also mechanically and electrically is exposed to then on another ceramic substrate 2.Between solder layer 15 and Peltier element 4, has intermediate layer 20, for example a nickel dam at least.Between solder layer 15 and respective areas of contact 3, has another intermediate layer 21, for example nickel dam at least.
Ceramic substrate is made according to the mode of Fig. 4～13, thereby utilize DCB technology, at least one face side of each corresponding ceramic layer or each ceramic substrate 2 is applied the metal coating of Copper Foil form, pass through proper technology then---for example mask and etching technique---and this coating is configured to define the single metallic region 9 of contact surface 3 and pad.
Applying of single intermediate layer---such as intermediate layer 13 and 14---is to carry out such as the mode of energising and/or the mode of chemical deposition.Wherein, for the intermediate layer of silver, can utilize for example silk screen printing, print mask or template, make by the disperse means that apply the material that comprises the intermediate layer, above-mentioned disperse means are nano-diffusion agent or corresponding paste for example.
In the mode of Figure 14; after the metal coating of metal forming of utilizing active welding or activated solder layer 18 to apply to form contact surface 3 or Copper Foil form; metal coating is configured to define the single metal zone 9 of contact surface 3 with suitable method (for example mask and etching technique); alternatively these metallic region 9 are applied one or more intermediate layers then; utilize printing---for example silk screen printing then; print mask or use template, by electricity or chemical deposition and/or apply the disperse means (for example still nano-diffusion agent) or the paste of the intermediate layer material that comprises powdery.
The joint of Peltier element 4 is to carry out through sinter layer 15 in the mode of Fig. 6～13, this joint is to be arranged at composition surface or to connect upward surperficial or be arranged at do not having the intermediate layer on the contact surface 3 or having on the terminals side in one or more intermediate layers, and therefore this joint does not have the intermediate layer equally or is provided with one or more intermediate layers.For this purpose, at least one surface that connect is applied the metal sintering material of powdery, for example as disperse means or nano-diffusion agent.
Then, under sintering temperature with under being lower than sintering temperature, make and to be connected sinter layer 15.
Sintering temperature herein is lower than the fusing point of the material of Peltier element 4, for example is lower than 30～50 ℃ of this fusing points, but sintering temperature is at least 120 ℃.But at all, can also not have the presintering stage under the pressure to carry out this sinter bonded at first, particularly, under sintering temperature and for example, carrying out sintering then in the mode that increases sintering pressure up to formed layer by agglomerated material with blind bore.Make corresponding sinter layer so that its thickness is 10～200 μ m.So-called spark plasma sintering technology is particularly suitable for sinter bonded or makes sinter layer 15, and wherein required sintering temperature is produced by the electric current of the agglomerated material of flowing through.
Above only the connection with a contact surface 3 of ceramic substrate 2 by sinter layer 15 or sintering on a terminal surfaces in conjunction with Figure 15 and 16 each Peltier element 4 of supposition combines, and the another terminal side was carried out with being connected through for example slicken solder or brazing bed of material solder layer 19 of respective areas of contact 3, perhaps also connected (sinter bonded) by corresponding sintering and carried out.In the relative configurations of this technology, can also selectively utilize the intermediate layer to be connected to contact surface 3 certainly by two terminals side that a sintering connects each Peltier element.
Figure 18 summary shows a kind of technology, does not wherein prepare Peltier element 4 in advance, only on the contact surface 3 of ceramic substrate 2 Peltier element 4 is set in the above described manner, for example utilizes template or mask; But in this technology, Peltier element 4 is to make by carry out sintering under the heating and the effect of pressure, and when making with Peltier element 4 sintering on contact surface 3.Like this, in same operation, finished combining of the manufacturing of corresponding Peltier element 4 and this element and contact surface 3 by sintering.Use the mask 22 with a plurality of openings 23 in this technology, each opening is formed for making the shape of Peltier element 4.Place mask 22 preparing to have on the ceramic substrate 2 of contact surface 3, make each opening 23 be positioned at the position that Peltier element 4 can be connected to contact surface 3.
In these technologies, contact surface 3 is formed by the metallic region 9 or the copper layer that do not have the intermediate layer or be provided with one or more intermediate layers.Utilize this technology to produce connection 12 and 12a.Form and each Peltier element 4 of sinter bonded according to Figure 15 then, make a terminals side of each Peltier element 4 be arranged on the contact surface 3 of ceramic substrate 2, and this element leaves from this contact surface.Then according to the position c of Figure 15, the terminal ends that so far is still free end of the Peltier element of each ceramic substrate 2, through such as slicken solder or the brazing bed of material or even corresponding sintering connect, and be connected to the contact surface 3 of another ceramic substrate 2.
When utilizing special mask and filling technique, can also form all Peltier elements by sintering on the contact surface 3 of one of two ceramic substrate of the peltier module that will make, and they are connected to contact surface 3, thereby in second processing step, after having cooled off Peltier element, their terminals side of exposing electrically and chemically is connected to the contact surface 3 on second ceramic substrate 2 of corresponding peltier module, for example by slicken solder or the brazing bed of material or even pass through sinter layer.
Especially for sinter bonded, promptly wherein connect 12b～12i and have sinter layer 15[sic] connection, corresponding ceramic substrate 2 with Peltier element 4 opposed face side on extra metal level 15 is set---for example copper layer---is a good idea, this metal level 15 can increase intensity and the reliability of ceramic substrate 2 in sintering process, shown in the execution mode of Figure 18, wherein Peltier element 4 alternately is made of the material that n mixes and p mixes, rather than, mix and the p doped portion constitutes by n as the execution mode of Fig. 1.
More than the present invention will be described with different execution modes.Under the prerequisite that does not depart from purport of the present invention, can carry out various changes and correction.
List of numerals
1 peltier module
2 ceramic substrate
3 contact surfaces
4 Peltier elements or chip
The electric connection terminal of 5,6 peltier modules
7 metal coatings
The 8 soft soldering bed of materials
9 metallic region (metal pad or copper pad)
The 10 soft soldering bed of materials
11 nickel dams
12, being connected between the metal pad of 12a～12i Peltier element 4 and contact surface 3 or contact surface 3
13 nickel intermediate layers
14 silver medals and/or au intermediate layer
15 sinter layers
16 nickel dams
17 silver medals and/or au intermediate layer
18 activated solder layers
The 19 soft soldering bed of materials
20,21 nickel, silver or au intermediate layer
22 masks
23 openings
The single jumper bar of 24 stamping tools
25 metal levels or copper layer
Claims (31)
1, a kind of manufacturing has the technology of the peltier module (1) of a plurality of Peltier elements (4), described a plurality of Peltier element (4) is positioned between two substrates (2) at least, described substrate (2) comprises electrical insulating material at it at least on the side of Peltier element (4), and these sides are provided with the contact surface (3) that is formed by metallized area (9), the terminal surfaces of Peltier element (4) is connected to this contact surface (3) in the mill, it is characterized in that:
In at least one terminals side, at least a portion of Peltier element (4) directly or through sintering connection (15) or sinter bonded is connected to described contact surface (3).
2, according to the technology of claim 1, wherein,
Described Peltier element (4) directly or through sintering connects the described contact surface (3) that (15) or sinter bonded are connected to described substrate (2) by a terminals side at every turn; In another processing step, each Peltier element (4) by its freely terminals side be connected to a contact surface of second substrate (2).
3, according to the technology of claim 2, wherein,
Connection in another processing step is undertaken by slicken solder or spelter solder.
4, according to the technology of claim 2 or 3, wherein,
Connection in another processing step is undertaken by sintering or sinter bonded.
5, the technology that one of requires according to aforesaid right, wherein,
Described Peltier element (4) is the parts of at least partly making before sinter bonded.
6, the technology that one of requires according to aforesaid right, wherein,
Manufacturing of at least a portion of described Peltier element (4) and sintering connection are carried out in routine operation or sintering process.
7, the technology that one of requires according to aforesaid right, wherein,
Sintering or sinter bonded utilize spark plasma sintering technology to carry out.
8, the technology that one of requires according to aforesaid right, wherein,
Sintering or sinter bonded are to carry out under the sintering temperature of the fusing point of the material that is lower than described Peltier element (4), are for example surpassing 100 ℃ and be lower than under about 30～50 ℃ sintering temperature of Peltier element material melting point and carry out.
9, the technology that one of requires according to aforesaid right, wherein,
Sintering or sinter bonded are to carry out under the sintering pressure of about 10～300bar.
10, the technology that one of requires according to aforesaid right, wherein,
Sintering or sinter bonded are to carry out under greater than the sintering pressure of 10bar.
11, the technology that one of requires according to aforesaid right, wherein,
Sinter bonded is to use the metallization agglomerated material to carry out.
12, the technology that one of requires according to aforesaid right, wherein,
Mode with thickness with 10～200 μ m applies agglomerated material (15).
13, the technology that one of requires according to aforesaid right, wherein,
Described metal sintering material applies with form of powder, preferably with the form of the disperse means that comprise pulverous agglomerated material or paste or with the form of nano-diffusion agent.
14, the technology that one of requires according to aforesaid right, wherein,
Copper, silver and/or copper-silver alloy are used as described metal sintering material.
15, the technology that one of requires according to aforesaid right, wherein,
Described metal sintering material comprises additive, especially reduces the additive of sintering temperature and/or sintering pressure, for example tin.
16, the technology that one of requires according to aforesaid right, wherein,
Sinter bonded is directly to carry out on the metallic region (9) that forms contact surface (3).
17, the technology that one of requires according to aforesaid right, wherein,
Before sinter bonded, the metallic region (9) that forms contact surface (3) go up and/or Peltier element (4) want on the engaged surface at least one metal intermediate layer (13,14,16,17) is set, for example nickel and/or silver and/or au intermediate layer.
18, require 17 technology according to aforesaid right, wherein,
Described intermediate layer is by electricity or chemical deposition and/or applies the material that is used to form the intermediate layer by the form with the paste of for example nano-diffusion agent or disperse means and form.
19, the technology that one of requires according to aforesaid right, wherein,
Described substrate is a ceramic substrate, for example aluminium oxide ceramics, the aluminium oxide ceramics with zirconia additive, aluminium nitride ceramics or silicon nitride ceramics.
20, the technology that one of requires according to aforesaid right, wherein,
The metallic region (9) that forms contact surface (3) is that the metal coating by the form that applies and construct metal forming for example or Copper Foil forms.
21, require 20 technology according to aforesaid right, wherein,
The metal forming or the applying of Copper Foil that form metal coating utilize direct joint or active welding procedure to carry out.
22, a kind of peltier module with a plurality of Peltier elements (4), described a plurality of Peltier element (4) is positioned between two substrates (2) at least, described substrate (2) comprises electrical insulating material at it at least on the side of Peltier element (4), and on these sides, be provided with the contact surface (3) that forms by metallic region (9), described Peltier element (4) is connected to this contact surface (3), wherein
In at least one terminals side, at least a portion of Peltier element (4) directly or through sintering connection (15) or sinter bonded is connected to contact surface (3).
23, according to the peltier module of claim 22, wherein,
Described Peltier element (4) directly or through sintering connects the described contact surface (3) that (15) are connected to described substrate (2) by a terminals side at every turn; Each Peltier element (4) utilizes soft soldering to connect by another terminals side or brazing or utilize sintering or sinter bonded is connected to the contact surface of another substrate (2).
24, according to the peltier module of claim 22 or 23, wherein,
Described sinter layer (15) has the thickness of 10～200 μ m.
25, the peltier module that one of requires according to aforesaid right, wherein,
Described sinter layer (15) comprises copper, silver and/or copper-silver alloy.
26, the peltier module that one of requires according to aforesaid right, wherein,
Described sinter layer (15) comprises additive, especially reduces the additive of sintering temperature and/or sintering pressure, for example tin.
27, the peltier module that one of requires according to aforesaid right, wherein,
The metallic region (9) of formation contact surface (3) goes up and/or the engaged surface of wanting of Peltier element (4) be provided with at least one metal intermediate layer (13,14,16,17), for example nickel and/or silver and/or au intermediate layer.
28, the peltier module that one of requires according to aforesaid right, wherein,
Described substrate is a ceramic substrate, for example aluminium oxide ceramics, the aluminium oxide ceramics with zirconia additive, aluminium nitride ceramics or silicon nitride ceramics.
29, the peltier module that one of requires according to aforesaid right, wherein,
The metallic region (9) that forms contact surface (3) is that the metal coating by the form that applies and construct metal forming for example or Copper Foil forms.
30, according to the peltier module of claim 29, wherein,
The metal forming or the applying of Copper Foil that form metal coating utilize direct joint or active welding procedure to carry out.
31, the peltier module that one of requires according to aforesaid right, wherein,
The formation that Peltier element (4) is connected with sintering is carried out in routine operation.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006009821.8 | 2006-03-01 | ||
| DE102006009821 | 2006-03-01 | ||
| DE102006011743.3 | 2006-03-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102837069A Division CN103354271A (en) | 2006-03-01 | 2007-02-20 | Peltier module manufacture method and peltier module |
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| CN101395730A true CN101395730A (en) | 2009-03-25 |
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| CNA2007800072277A Pending CN101395730A (en) | 2006-03-01 | 2007-02-20 | Method for the production of peltier modules, and peltier module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620402A (en) * | 2012-03-29 | 2015-05-13 | 赢创工业集团股份有限公司 | Powder metallurgical production of a thermoelectric component |
| CN109139719A (en) * | 2017-06-27 | 2019-01-04 | 斯凯孚公司 | Preload in bearing assembly is adjusted |
| US11056633B2 (en) | 2016-01-21 | 2021-07-06 | Evonik Operations Gmbh | Rational method for the powder metallurgical production of thermoelectric components |
-
2007
- 2007-02-20 CN CNA2007800072277A patent/CN101395730A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104620402A (en) * | 2012-03-29 | 2015-05-13 | 赢创工业集团股份有限公司 | Powder metallurgical production of a thermoelectric component |
| CN104620402B (en) * | 2012-03-29 | 2017-09-01 | 赢创德固赛有限公司 | The powder metallurgically manufacturing of thermoelectric part |
| US11056633B2 (en) | 2016-01-21 | 2021-07-06 | Evonik Operations Gmbh | Rational method for the powder metallurgical production of thermoelectric components |
| CN109139719A (en) * | 2017-06-27 | 2019-01-04 | 斯凯孚公司 | Preload in bearing assembly is adjusted |
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Application publication date: 20090325 |