CN1013909B - Chemical ni-plating process for solar cell and silicon element - Google Patents
Chemical ni-plating process for solar cell and silicon elementInfo
- Publication number
- CN1013909B CN1013909B CN87102147A CN87102147A CN1013909B CN 1013909 B CN1013909 B CN 1013909B CN 87102147 A CN87102147 A CN 87102147A CN 87102147 A CN87102147 A CN 87102147A CN 1013909 B CN1013909 B CN 1013909B
- Authority
- CN
- China
- Prior art keywords
- plating
- solar cell
- silicon chip
- chemical
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a chemical nickel plating and chemical corrosion technique of a silicon device, which belongs to a selective chemical nickel plating and chemical corrosion technique for realizing non black adhesive sheltering on the surface of a silicon chip in the production of the silicon device. By the technique of the present invention, a grid cell on the front surface of a solar cell and a back cell can be made by one step. If the selective nickel plating and chemical corrosion technique for the silicon device can be used for replacing a complicated harmful black adhesive sheltering technique.
Description
The invention belongs in solar cell and the silicon device production and shelter selective chemical nickel plating technology at the black glue of silicon chip surface realization nothing.
In the production of low-cost silicon solar cell, chemical plating nickel technology is widely adopted.But the formation of positive gate electrode is sheltered by black glue often and is realized.Adopt black glue to shelter preparation gate process flow process to be: just, back side chemical nickel plating → black glue protection back electrode → printing system positive gate electrode pattern → erode away front electrode grid line → go to deceive tin (Chen Tingjin on the glue cleaning → electrode; Chinese Solar Energy Society annual meeting paper in 1981,8-16)
In the production of high-effective concentration silicon solar cell,, often be applied to the preparation process of gate electrode because photoetching technique can reach the requirement of fine sizes.Adopt the photoetching technology of preparing to prepare the gate process flow process to be: evaporation noble metal titanium, palladium, silver → mask lithography → erode away grid line pattern → remove photoresist.（S·Khemthong and P·A·Iles，Solar cells，Vol 6，June 1982，59-77）
In the production of silicon transistor, generally to carry out chemical nickel plating once or twice at the silicon chip back side.For protecting the silicon chip front, need to be coated with the black glue of last layer before the nickel plating and make protective layer in the silicon chip front, get rid of and after nickel plating, will deceive glue again.(Zhang Yucai, semiconductor technology, in May, 1986,15)
In the production of P-N knot silicon solar cell and STS solar cell and STS solar cell, often adopt black glue to shelter and realize the selective chemical corrosion.To P-N knot silicon solar cell.For the technological process of removing the knot employing of the periphery and the back side is: diffusingsurface blacking glue → corrosion periphery is tied → is gone black glue with the back side and cleans.(Xi'an Communications University, Huashan semi-conducting material factory, three of TDB75 silicon solar cell evaluation meeting data, October nineteen eighty-two) to the SIS solar cell, after the nickel plating of the silicon chip back side, the technological process of adopting for the chemical etch polishing that realizes the silicon chip front is: the positive mirror polish of back side blacking glue → chemical corrosion → go black glue to clean.〔A·K·Saxena S·P·Singh and O·P·Aguihotri，Solar Cells，19（1986～1987），163-170〕
Utilize black glue process for masking prepare low-cost silicon solar cell just, back side contact electrode processing step is more, operate complicated, long in time limit, cost is high, the nickel dam corrosion is difficult to control, the grid line size is difficult for realizing miniaturization, the gate electrode shaded area is bigger, the pollutions such as black glue of fully removing are often failed on the surface, directly influence the photoelectric conversion efficiency of solar cell, at blacking glue and in the process with the black glue of organic solvents such as toluene removal, noxious substances such as black glue and toluene have certain damaging effect to human body.
Utilize black glue process for masking to realize silicon transistor back side chemical nickel plating, utilize black glue process for masking to realize the chemical corrosion of silicon chip back side knot and periphery, utilize black glue process for masking to realize that the chemical corrosion in silicon chip front prepares glossy surface (being also referred to as chemical etch polishing), it is complicated to have operation equally, long in time limit, cost height, silicon chip surface easily pollute and organic substance such as black glue, toluene has shortcomings such as certain damaging effect to human body.
Purpose of the present invention is exactly to replace complicated and harmful black glue process for masking in the production of silicon solar cell or SIS solar cell and in the production at silicon transistor fully, utilize the method for easy photoetching technique and adhesive tape veneer, reach the effect of selective chemical nickel plating, chemical corrosion.
According to the present invention, a kind of chemical nickel plating of silicon device and chemical corrosion, available photoresist is directly sheltered coating as silicon chip surface, band glue (behind the mask lithography) chemical nickel plating forms required metalized surface (contact electrode etc.), the chemical corrosion of silicon chip can be adopted the coating photoresist, shelter chemical corrosion with adhesive tape again again, replace black glue (Black Wax) process for masking.
Content of the present invention is: 1, when preparation silicon diffused junction solar cell or SIS solar cell chemical nickel plating gate electrode and back electrode, at first according to the design of the principle of minimum gate electrode shaded area and minimum grid line resistance and make thin and close gate electrode photolithography plate, then at silicon chip front or SnO
2, mask lithography above the ITO coating, again silicon chip is placed the chemical nickel-plating liquid plating, because the photoresist that is aggregated at the silicon chip surface remainder covers, play the masking action of selective chemical nickel plating and have the erosion of certain alkali resistance plating bath, realized that so just the chemical nickel plating layer process flow that a step forms silicon solar cell or SIS solar cell positive gate electrode and back electrode is reduced to: tin on front mask lithography → positive gate electrode and back electrode chemical nickel plating → remove photoresist → electrode.
2, when preparation silicon diffused junction solar cell or SIS solar cell, need utilize CP
4Chemical corrosion liquid is removed the periphery and the back side knot of diffused junction battery or is utilized CP
4Chemical corrosion liquid carries out the surface corrosion polishing to the silicon chip front, and the method that the present invention utilizes photoresist coating to combine with the adhesive tape veneer realizes the selective chemical corrosion as the protective layer of silicon chip surface.
3, in the production of silicon transistor, before the chemical nickel plating of the silicon chip back side, be coated with the last layer photoresist in the silicon chip front earlier, glue plating in chemical nickel-plating liquid is with in preceding baking exposure then.The photoresist of polymerization both can play the masking action of selective chemical nickel plating, had the erosion of certain alkali resistance plating bath again.
The present invention can be substituted in silicon diffused junction solar cell fully, black glue process for masking during SIS solar cell or silicon transistor are produced, clean nontoxicly, easy and simple to handle, will play the reduction of erection time, reduce cost, reduce the good effect that pollutes and improve surface quality and electrical property the production of silicon solar cell and silicon device.
The present invention all has certain practicality to other similar selective chemical plating and selective chemical corrosion.
Embodiment provided by the invention is as follows:
Embodiment 1
Get multiple crystal-pulling silicon chip (resistivity 0.2～2.0 Ω .cm of a collection of (10) φ 60mmN type
-1), through suede corrosion, be coated with the source phosphorous diffusion, remove periphery and back of the body knot, corase grind back of the body surface behind removal front phosphorosilicate glass layer and the cleaning, drying, is coated with one deck negative photoresist (103B type), whirl coating, preceding baking (the electricity consumption blowing hot wind dries up), with gate electrode reticle mask, exposure 2-5 minute (, also will prolong) under sunlight at cloudy day or snow day time by the light strong and weak decision time for exposure, in butanone solution, develop, post bake (infrared lamp toasted 20 minutes down) places the chemical nickel-plating liquid plating for preparing in advance with silicon chip, and (the plating condition is: pH value 8.5～9.5,6～8 minutes time, 83～87 ℃ of temperature) will plate good slice, thin piece and take out and be placed on the 250 ℃ of bakings of low temperature 30 minutes in nitrogen atmosphere of diffusion fire door, in plasma degumming machine, remove photoresist, wicking, the welding electrode lead-in wire is prepared into the monolithic solar cell.Solar cell gate electrode shaded area is 5.63%, and photoelectric conversion efficiency is calculated between 10.7%～11.5% by real area.The monolithic solar cell that adopts black glue process for masking preparation with a collection of slice, thin piece is because of the influence of big (about 15%) and battery surface quality (pollution is arranged) of grid line shaded area, photoelectric conversion efficiency only is 9.0%～10.1%, adopts the present invention can make photoelectric conversion efficiency of the solar battery improve 1%～2%.
Embodiment 2
Getting substrate is that the multiple anti-monocrystalline silicon piece resistivity of N type φ 60mm is 0.2～0.3 Ω .cm
-1, silicon chip is through CP
4Chemical polishing, growth 30～50
Oxide layer, fluorine SnO is mixed in positive spraying
2After the coating, at SnO
2Coating surface gluing, whirl coating, preceding baking, mask, exposure, development, hard mould place the chemical nickel plating plating, remove photoresist, wicking, prepare simultaneously that positive gate electrode contacts with back electrode, the grid line shaded area is 5.63% with the ratio of battery table area, the solar battery surface cleanliness without any pollution.(photoetching, change plating and the condition of removing photoresist identical with embodiment 1)
Embodiment 3
Get preparation 3DK
4The silicon chip front gluing of transistor dies, whirl coating, preceding baking, exposure, post bake, place the chemical nickel-plating liquid plating, remove photoresist.(photoetching, change plating and the condition of removing photoresist identical with embodiment 1) silicon chip front surface cleanliness without any pollution, the back side forms the electrode contact.
Embodiment 4
Get a silicon chip that is preparing textured silicon solar cell, after diffusion, the front is coated with one deck negative photoresist, whirl coating, electricity consumption hot hair dryer to be dried up, under infrared lamp, surface with glue is attached on the adhesive tape, adhesive tape is floating gently till the edge does not have bubble, with blade adhesive tape is drawn down together with silicon chip repeatedly, placed CP
4Remove periphery and back side knot in the chemical corrosion liquid, take out silicon chip after 20～30 seconds and wash with running water, take adhesive tape off, put silicon chip and remove the silicon chip frontside oxide layer in the concentrated sulfuric acid, photoresist film comes off voluntarily.Silicon chip front cleanliness without any pollution does not have the undercutting phenomenon to be taken place.
Embodiment 5
Get the silicon chip of a preparation SIS solar cell,, stick adhesive tape, place CP at the silicon chip backsizing
4In the chemical corrosion liquid with positive mirror polish, 20～30 seconds time, remove back side adhesive tape and photoresist, no undercutting phenomenon that the silicon chip backside cleaning is pollution-free takes place, silicon chip front smooth.
Claims (1)
1, the method for solar cell and silicon device chemical nickel plating, it is characterized in that earlier photoresist being coated in the silicon chip surface of after pre-treatment, desiring plating, whirl coating, preceding baking (drying up) with hair dryer, mask lithography, exposure under the sunlight, place butanone solution to develop again, toast post bake under infrared lamp, place the chemical nickel-plating liquid plating for preparing in advance then, the plating condition is pH value 8.5-9.5, temperature 83-87 ℃, time 6-8 minute, take out silicon chip then and put in the blanket of nitrogen 250 ℃ of bakings 30 minutes, place plasma degumming machine to remove photoresist wicking then again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87102147A CN1013909B (en) | 1987-03-17 | 1987-03-17 | Chemical ni-plating process for solar cell and silicon element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87102147A CN1013909B (en) | 1987-03-17 | 1987-03-17 | Chemical ni-plating process for solar cell and silicon element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87102147A CN87102147A (en) | 1988-10-12 |
| CN1013909B true CN1013909B (en) | 1991-09-11 |
Family
ID=4813840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN87102147A Expired CN1013909B (en) | 1987-03-17 | 1987-03-17 | Chemical ni-plating process for solar cell and silicon element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1013909B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764174A (en) * | 2008-12-25 | 2010-06-30 | 上海太阳能工程技术研究中心有限公司 | Method for manufacturing light-focusing multi-junction gallium arsenide solar cell |
| US20110192316A1 (en) * | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
| CN102162997A (en) * | 2010-02-24 | 2011-08-24 | 中国科学院大连化学物理研究所 | Method for fabricating micro-fluidic chip using solar light as exposure light source and application thereof |
| CN104599964B (en) * | 2015-01-22 | 2017-06-23 | 清华大学 | The guard method of body silicon wet method deep etching |
-
1987
- 1987-03-17 CN CN87102147A patent/CN1013909B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN87102147A (en) | 1988-10-12 |
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