CN101382743B - Coaxial double face position aligning system and position aligning method - Google Patents
Coaxial double face position aligning system and position aligning method Download PDFInfo
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- CN101382743B CN101382743B CN2008102018201A CN200810201820A CN101382743B CN 101382743 B CN101382743 B CN 101382743B CN 2008102018201 A CN2008102018201 A CN 2008102018201A CN 200810201820 A CN200810201820 A CN 200810201820A CN 101382743 B CN101382743 B CN 101382743B
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Abstract
The invention provides a coaxial double-faced position alignment system and a position alignment method. The coaxial double-faced position alignment system provided by the invention is applied to a double-faced projection exposure device and comprises a double-faced position alignment device arranged above a mask, a mask mark arranged on the mask, an exposure object arranged on a film platform and an exposure object mark arranged on the exposure object, wherein, the double-faced position alignment device tests the position information of the mask marks and the exposure object marks respectively when the face is aligned and the back is aligned and sends the position information to a motion control unit for a mask platform and the film platform so as to control the motion of the mask platform and the film platform for adjusting the positions of the mask and the exposure object, thereby realizing the accurate alignment of the positions of exposure fields at the face and the back of the exposure object and circuit patterns on the mask, wherein, the back alignment adopts near infrared optical path coaxial imaging for realizing the alignment of the exposure field and the patterns on the the mask.
Description
Technical field
The invention relates to position aligning system and position alignment method in a kind of projection aligner, and particularly relevant for a kind of coaxial double face position alignment system and position alignment method.
Background technology
The main development trend of semiconducter IC encapsulation at present is many pins, thin space, small-sized, slim, high-performance, multi-functional, high reliability and low cost, and the encapsulation of IC chip becomes the important directions of modern little package technique development from two-dimentional multi-chip module to the 3-D multi-chip component technology.In addition, the development of MEMS device, also press for MEMS device and the systems such as the microsensor that meets each field demand, microactrator, microstructure of producing, not only need produce the figure that the relevant position requires in its front and process this device, also require to be manufactured with the figure of relevant position requirement at its back side.Along with the growth requirement of 3-D multi-chip component technology and MEMS device, traditional single face is aimed at and can not be met the demands, and the double-sided alignment technology is arisen at the historic moment, and in semiconductor applications the play more and more important use.
U.S. Pat 6525805 has disclosed a kind of alignment methods and system, when carrying out the silicon chip lower surface on time, for each lower surface markers align position, need to increase an auxiliary optical imaging system, this moment need be at the part edge position of wafer-supporting platform fluting, with the convenient auxiliary optical imaging system of placing, by the auxiliary optical imaging system alignment mark of silicon chip bottom surface is imaged onto photodetector, by the aligning of subsequent image processing, control system realization silicon chip lower surface, what this patent silicon chip mark was aimed at employing is the off-axis alignment technology.Described double-sided alignment device is the wafer-supporting platform complex structural designs not only, and there is certain requirement the position of silicon chip bottom alignment mark, and the Technological adaptability of this technique of alignment is poor.
U.S. Pat 6768539 described devices are carrying out the bottom surface on time, also to increase auxiliary optics to each rear indicia position, need to slot at the wafer-supporting platform edge, different is, and it just increases a position that the bottom mark is imaged onto silicon chip upper surface level in silicon chip bottom alignment mark position and gets final product, the mobile projector object lens make the picture of this mark be imaged onto the aligning of realizing silicon chip bottom mark on the photodetector by projection objective then.
Above-mentioned patent all is to utilize visible light that the silicon chip bottom is marked as picture, can obtain more satisfactory imaging definition, but owing to all need slot at the silicon chip platform at the aligned position of each bottom mark, so not only increased the complexity of wafer-supporting platform structural design, and there is certain requirement the position of silicon chip bottom alignment mark, the Technological adaptability of technique of alignment is poor; In addition owing to need to increase auxiliary optics in wafer-supporting platform bottom and once more mark carried out imaging, so also more complicated of the structural design of alignment system, be unfavorable for the design and the optimization of whole projection aligner space structure.
Summary of the invention
The invention provides a kind of coaxial double face position alignment system and position alignment method.
The coaxial double face position alignment system that the present invention proposes, be used for the biplane projection exposure device, be arranged at one at least by optical projection system, mask, hold bed, hold the bed motion control unit, on the projection aligner of exposure object, wafer-supporting platform, wafer-supporting platform motion control unit and overhead control device, comprising:
Be positioned at the double-surface position alignment device of mask top;
Be arranged at the mask mark on the mask;
Be positioned at the exposure object on the wafer-supporting platform;
Be arranged at the exposure object mark on the exposure object;
Wherein, described double-surface position alignment device by detect respectively described front to the punctual and back side to the positional information of punctual mask mark and exposure object mark and send to and hold bed and wafer-supporting platform motion control unit, adjust the position of mask and exposure object with the motion that bed and wafer-supporting platform are held in control, thereby realize on the exposure object on the double-edged exposure field and mask the accurate aligning of position between the circuit pattern;
Wherein, reverse side is aimed at the aligning that adopts the coaxial imaging of near infrared light path to realize pattern on exposure field and the mask.
The coaxial double face position alignment methods that the present invention proposes comprises the following steps:
Carry out the front on time, make mask mark and exposure object front be marked as picture by the visible light light path, move and to hold bed and wafer-supporting platform moves in the alignment device field range of position mark, on visible light photodetector target surface, carry out imaging, and calculate the positional information be marked on the target surface by visible light photodetection processing unit, write down current positional information of holding the bed wafer-supporting platform simultaneously;
Carry out the back side on time, the mask mark is by the visible light light path imaging, the exposure object rear indicia is by the near infrared light light path imaging, moves to hold bed the mask mark is moved in the alignment device visual field, position, mask is marked on the visible light photodetector target surface carries out imaging; Mobile wafer-supporting platform moves in the alignment device field range of position the exposure object rear indicia, exposure object is marked on the near infrared light photodetector target surface carries out imaging, and, write down current wafer-supporting platform positional information simultaneously by the positional information of mark processing unit calculation exposure object tag on target surface;
By the aforementioned mask marker location information, hold bed positional information, exposure object marker location information and wafer-supporting platform positional information, according to the alignment algorithm model, the translational movement and the rotation amount of the relative mask of calculation exposure object, the position of adjusting exposure object is accurately aimed at exposure object tow sides and mask.
Major advantage of the present invention is: utilize near infrared light to penetrate exposure object the bottom mark is carried out imaging, this alignment methods to the mark position of exposure object without limits, can carry out imaging to the exposure object mark of any position on the exposure object exposure field and aim at, improve the Technological adaptability of alignment mark; Need on the silicon chip platform, not slot and lay the auxiliary optical imaging system, thereby reduce the complexity of silicon chip wafer-supporting platform structural design, reduce the complex structural designs degree of whole alignment system simultaneously yet; Bottom imaging of mark and receiving system realize by increase a light path in original alignment device, compares that formerly the space layout of technology whole projection aligner of the present invention will be compact more, and saved entire equipment processing and manufacturing cost.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is for the projection aligner synoptic diagram of making integrated circuit or printed circuit board (PCB).
Fig. 2 is that double-sided alignment apparatus structure of the present invention is formed synoptic diagram.
Fig. 3 is illumination of mask mark and imaging system structural representation.
Fig. 4 is mark illumination of exposure object front and imaging system structural representation.
Fig. 5 is illumination of exposure object rear indicia and imaging system structural representation.
Fig. 6 a is that mask mark and exposure object front are marked at the position distribution synoptic diagram that aims at the mark on the photodetector.
To be the exposure object back side be marked at aligned position synoptic diagram on the photodetector to punctual mask to Fig. 6 b.
Fig. 6 c is the aim at the mark position distribution synoptic diagram of exposure object rear indicia on photodetector.
Fig. 7 is that the double-sided alignment apparatus structure of second embodiment is formed synoptic diagram.
Embodiment
In order more to understand technology contents of the present invention, especially exemplified by specific embodiment and cooperate appended graphic being described as follows.
The projection aligner of one embodiment of the invention comprises: mask, and it has described circuit pattern; The mask mark is located on the mask, is used for the position alignment of mask; Hold bed, be used to support circuit pattern on the mask to treat by the optical projection system projection imaging to exposure object; Optical projection system, the wavelength that utilizes exposure light source with the circuit pattern described on the mask with certain amplification or the multiplying power projection imaging dwindled on exposure object; Exposure object, its surface scribbles photoresist, and the circuit pattern that is used to receive on the mask passes through the optical projection system imaging; The exposure object mark is arranged on the described exposure object, is used for the position alignment of exposure object; Wafer-supporting platform is used to support exposure object; Hold bed and wafer-supporting platform motion control unit, in the process of setting up mask mark and exposure object mark relative position, the motion of holding bed and wafer-supporting platform by control makes mask aim at exposure object; The overhead control device is finished the series of algorithms in the alignment procedures, and total system is controlled.
The coaxial double face alignment device of one embodiment of the invention comprises, visible light source is used for the illumination to the mark and the exposure object front alignment mark of mask plate; The near infrared light light source is used for exposure object and overturns when carrying out back-exposure, sees through exposure object bottomside mark is thrown light on; The visible light-focusing mirror unit is used for the visible light of lighting fiber outgoing is assembled; Near infrared light condenser unit is used near infrared light is assembled with the near infrared light of heat-resisting lighting fiber outgoing; Mirror unit, visible light light path and near infrared light light path are shared, realize the light path deviation and satisfy the space structure size requirements; The visual light imaging unit is used for mask mark and exposure object mark blur-free imaging; The near infrared light imaging unit is used for when back-exposure is carried out in exposure object upset, and the exposure scale of exposure object bottom surface is remembered clear imaging; The visible light photodetector, be used for surveying exposure mark imaging when receiving mask mark and exposure object face exposure, its sensor is CCD (Charge Coupled Device charge-coupled image sensor) or CMOS (ComplementaryMetal-Oxide-Semiconductor Transistor complementary metal oxide semiconductor (CMOS)); The near infrared light photodetector is used for surveying bottomside mark imaging when receiving the exposure object upset, and its sensor is CCD or CMOS; The mark processing unit is used to handle and calculate mask mark and exposure object front, the image space of bottomside mark on the photodetector target surface.
Below in conjunction with the specific implementation method that accompanying drawing and inventor provide, the invention will be further described.
Fig. 1 is for the projection aligner schematic illustration of making integrated circuit or printed circuit board (PCB), by optical projection system 1, mask 2, hold bed 5, hold bed motion control unit 100, exposure object 6, wafer-supporting platform 7, wafer-supporting platform motion control unit 110, position alignment device 10, photodetection processing unit 70,80 and complete machine Master Control Unit 90 form.
The mask 2 of describing exposure circuit pattern 3 and mask mark 4 places and holds on the bed 5, is displaced into X ', Y ', Z ' direction by holding bed motion control device 100.Exposure object front mark 8,8 ' is positioned on the exposure object 6,8 ' is the position mark when exposure object upset back mark forwards the bottom to, the exposure object 6 that applies photoresist places again on the wafer-supporting platform 7, and is removable in X, Y, Z direction by wafer-supporting platform motion control device 110 control wafer-supporting platforms 7.Optical projection system 1 is by the ultraviolet band light 350nm-450nm of exposure light source, circuit pattern on the mask 28 can be done projection and transfer on the exposure object 6 size of the circuit pattern 9 after the circuit pattern 8 on the enlargement ratio of the optical projection system 1 decision mask 2 projects on the exposure object 6.
Complete machine Master Control Unit 90 can be realized making whole position alignment device according to the unified orderly operation of certain sequential to photodetection processing unit 70,80, the control of holding bed motion control unit 100 and wafer-supporting platform motion control unit 110 etc. by control bus.
Fig. 2 is that the double-sided alignment apparatus structure of one embodiment of the invention is formed key diagram, this double-sided alignment device 10 comprise mirror unit 20,
Visible light-focusing mirror 30, visual light imaging unit 40, near infrared light condenser 50, near infrared light imaging unit 60, right angle Amici prism 11,12,13, visible light CCD80, infrared light CCD70 and three beam splitter prisms 11,12,13 are formed.
Form as objective lens 24 before mirror unit 20 is reached by plane mirror 21, right-angle prism 22, right-angle prism 23 and form, its effect is to realize the light path deviation, satisfies the space structure dimensional requirement.Visible light-focusing mirror unit 30 is made up of lighting fiber 31, condenser group 32, visible light filter plate 33, and its effect is that the wavelength to lighting fiber 31 outgoing is that the visible light of 520～590nm is assembled.Above-mentioned condenser unit 30, mirror unit 20 and beam splitter prism 11 common formation mask mark illuminators realize the even illumination to the mask mark; Condenser unit 30, mirror unit 20, beam splitter prism 11, mask 2 and optical projection system 1 constitute exposure object front mark illuminator, realize the even illumination of exposure object front mark.The catoptron of aforementioned mask plate and top, condenser, beam splitter prism are mask mark and exposure object front mark illumination common sparing, are double structure designs, are called the visible illumination system.Infrared light condenser unit 50 is made up of lighting fiber 53, near infrared illuminated mirror group 52, near infrared filter plate 51, and its effect is that the wavelength to lighting fiber 53 outgoing is that the near infrared light of 1050nm～1200nm converges.Above-mentioned condenser unit 50, spectroscope 13,12,11 and mirror unit 20, mask plate 2 and optical projection system 1 common formation exposure object rear indicia illuminator realize the even illumination of exposure object rear indicia, are the near infrared light illuminator.Above-mentioned visible illumination system and near infrared light illuminator all are Kohler illumination systems on version.
Visual light imaging unit 40 is made up of mechanical shutter 41, image-forming objective lens group 42, its effect is a mask mark 4 through the visible illumination system evenly after the illumination, the illuminating bundle of mask mark 4 behind mirror unit 20 and mask mark image-generating unit 40 blur-free imaging on photodetector 80.Exposure object front mark is through visible illumination system and mask, projection objective evenly after the illumination, the illuminating bundle of exposure object mark 8 behind mirror unit 20 and mask mark image-generating unit 40 blur-free imaging on photodetector 80.This visual light imaging unit 40 and mirror unit 20, and beam splitter prism 11,12 is common forms double imaging arrangement, respectively with exposure object front mark and mask mark blur-free imaging on visible light receiver 80.
Image-generating unit 60 is made up of mechanical shutter 61, image-forming objective lens group 62 and Amici prism 13, its effect is an exposure object bottom mark 8 ' through the near infrared light illuminator evenly after the illumination, the illuminating bundle of exposure object bottom mark 8 ' behind optical projection system 1, mask 2, mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12,13 and exposure object rear indicia image-generating unit 60 blur-free imaging near infrared light photodetector 70.
In the markers align process, in order to prevent mask mark 4 and exposure object mark 8 or 8 ' imaging on photodetector 70 and 80 simultaneously, the image contrast that influences each other, one embodiment of the invention has added mechanical shutter 41,61 respectively in visual light imaging unit 40 and near infrared light imaging unit 60.8 pairs of mask mark 4 and exposure object front marks are punctual when carrying out, close the mechanical shutter 61 near infrared light source switch and the near infrared light imaging unit 60, open the mechanical shutter 41 in visible light source and the visual light imaging unit 40, make mask mark 4 on photodetector 80, become sharply defined image with exposure object mark 8.When carrying out exposure object bottom mark 8 ' on time, close the mechanical shutter 41 in visible light source switch and the visual light imaging unit 40, open the mechanical shutter 61 near infrared light light source switch and the near infrared light imaging unit 60, make exposure object bottom mark 8 ' on photodetector 70, become sharply defined image.
Fig. 3 is illumination of mask mark and imaging system structure key diagram, form by mirror unit 20, right angle beam splitter prism 11,12, visible illumination unit 30, visual light imaging unit 40 and visible light photodetector 80, when mask mark 4 by visible illumination system 30 evenly after the illumination, the illuminating bundle on the mask mark 4 behind mirror unit 20, right angle beam splitter prism 11,12 and visual light imaging unit 40 blur-free imaging on visible light photodetector 80.
Alignment mark illumination and imaging system structure key diagram when Fig. 4 is the exposure object face exposure, by optical projection system 1, mask 2, mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, visible illumination unit 30, visual light imaging unit 40 and visible light photodetector 60 are formed, after exposure object mark 8 was evenly thrown light on by visible illumination system 30, the illuminating bundle on the exposure object mark 8 was through optical projection system 1, mask 2, mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, visual light imaging unit 40 back blur-free imagings are on visible light photodetector 80.
When Fig. 5 is the exposure object back-exposure, bottom mark illumination and imaging system structure key diagram, by optical projection system 1, mask 2, mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, right angle beam splitter prism 13, near infrared light illumination 50, near infrared light imaging unit 60 and near infrared light photodetector 70 are formed, after exposure object bottom mark 8 ' was evenly thrown light on by near infrared light illuminator 50, the illuminating bundle on the exposure object mark 8 ' was through optical projection system 1, mask 2, mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, right angle beam splitter prism 13, near infrared light imaging unit 60 back blur-free imagings are near infrared light photodetector 70.
The design wave band of optical projection system 1 is 350～450nm in one embodiment of the invention structure, exposure circuit pattern 3 blur-free imaging to mask 2; And the exposure object mark imaging system that the aberration that exposure object face exposure mark 8 is produced during by optical projection system 1 imaging is made up of mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, visual light imaging unit 40 compensates, and makes face exposure object tag 8 and mask mark 4 blur-free imaging on visible light photodetector 80 simultaneously.The exposure object mark imaging system that the aberration that exposure object bottom mark 8 ' is produced during by optical projection system 1 imaging is made up of mirror unit 20, right angle beam splitter prism 11, right angle beam splitter prism 12, right angle beam splitter prism 13, near infrared light imaging unit 60 compensates, make exposure object mark 8 ' can be near infrared light photodetector 70 blur-free imaging.
Fig. 6 is mask mark 4 and exposure object mark 8 mark 8 ' position distribution key diagram that aims at the mark on photodetector 70 bottom photodetector 80 and exposure object, and Fig. 6 a is that mask mark 4 and exposure object mark 8 are imaged on the target location distribution schematic diagram on the photodetector 80 simultaneously.Fig. 6 b carries out the exposure object back side on time, demarcates mask position again, and mask is marked at the position description figure that aims at the mark on the visible-light detector 80.Fig. 6 c is that exposure object bottom mark 8 ' is imaged on the position distribution key diagram that aims at the mark on the photodetector 70.When carrying out mask registration and exposure object front on time, close near infrared imaging unit shutter 61 and near-infrared light source, open visible light source and visual light imaging unit shutter 41, this moment, the mask mark was imaged on photodetector 80 lower rights, and the exposure object mark is imaged on the photodetector upper left side, shown in Fig. 6 a.When carrying out the exposure object back side on time, carrying out mask position earlier aims at, close near infrared imaging unit shutter 61 and near-infrared light source, open visible light source and visual light imaging unit shutter 41, this moment, the mask mark was imaged on photodetector 80 lower rights, shown in Fig. 6 b, close visual light imaging unit shutter 41 and visible light source then, open near infrared light light source and near infrared imaging unit shutter 61, this moment, exposure object bottom mark was imaged on the photodetector 70, shown in Fig. 6 c.
The positive flow process of aiming at of exposure object:
Visible light source and visual light imaging unit shutter 41 are opened on time in the exposure object front, close near infrared light light source and near infrared light imaging unit shutter 61.Move and to hold bed 5 mask mark 4 is imaged in the visual field, lower right of visible light photodetector 80, and mobile wafer-supporting platform 7 images in the visual field, upper left side of visible light photodetector 80 exposure object mark 8.Utilize the photodetection processing unit to judge whether mask mark 4 and exposure object mark 8 are on photodetector 80 target surfaces.If two marks all are on the detector target surface, then by the photodetection processing unit according to current mask mark 4 of related algorithm Model Calculation and exposure object mark 8 positional information on photodetector 80 target surfaces, write down current positional information of holding bed 5 and wafer-supporting platform 7 simultaneously; If mask mark 4 or exposure object mark 8 be not on the target surface of photodetector 80, then according to exposure object mark searching route planned in advance and step size, move and to hold bed 5 or wafer-supporting platform 7, and whether judge mark is positioned on the target surface of photodetector 80 to next searching position; If mark is positioned on the target surface of photodetector 80, then by photodetection processing unit 90 according to current mask mark 4 of related algorithm Model Calculation and exposure object mark 8 positional information on photodetector 80 target surfaces, write down current positional information of holding bed 4 and wafer-supporting platform 7 simultaneously; If mask mark 4 or exposure object mark 8 be on the target surface of photodetector 80, then stepping is held bed 5 or wafer-supporting platform 7 to next ferret out position, till searching mask mark 4 and exposure object mark 8; Exceeded the hunting zone of prior setting if hold the displacement of bed 4 or wafer-supporting platform 7 in the search procedure, then stopped search, and upload again.
According to the position alignment flow process and the relative coordinate system transformational relation of mask 2, can calculate mask 2 position alignment after, translational movement and the rotation amount of the circuit pattern 3 on the mask in wafer-supporting platform zero-bit coordinate system; In like manner, according to the position alignment flow process and the relative coordinate system transformational relation of exposure object 6, can calculate exposure object 6 position alignment after, translational movement and the rotation amount of exposure object 6 in wafer-supporting platform zero-bit coordinate system; The position relation in wafer-supporting platform zero-bit coordinate system according to circuit pattern on the aforementioned mask version 3 and exposure object 6 can realize exposure field 9 and the accurate position alignment in exposure process of the circuit pattern 3 on the mask 2 on the exposure object 6.
Flow process is aimed at the exposure object back side:
When 180 ° of exposure object index face upsets, on time, it simultaneously is 8 ' that the exposure object mark just is positioned at wafer-supporting platform, as shown in Figure 5 to the exposure object back side.
Aim at flow process and at first aim at shown in the flow process, the mask mark is carried out imaging and location as the front.
Open near infrared light light source and near infrared light imaging unit shutter 61 then, close visible light source and visual light imaging unit shutter 41.Mobile wafer-supporting platform 7 images near infrared light photodetector 70 visual fields exposure object mark 8 '.Utilize the photodetection processing unit to judge whether exposure object mark 8 ' is on photodetector 70 target surfaces.If mark is on the detector target surface, then by the photodetection processing unit according to the positional information of the current exposure object mark 8 ' of related algorithm Model Calculation on photodetector 70 target surfaces, write down the positional information of current wafer-supporting platform 7 simultaneously; If exposure object mark 8 ' is not on the target surface of photodetector 70, then according to exposure object mark searching route planned in advance and step size, mobile wafer-supporting platform 7 is to next searching position, and whether judge mark is positioned on the target surface of photodetector 70; If mark is positioned on the target surface of photodetector 70, then by photodetection processing unit 90 according to the positional information of the current exposure object mark 8 ' of related algorithm Model Calculation on photodetector 70 target surfaces, write down the positional information of current wafer-supporting platform 7 simultaneously; If exposure object mark 8 ' is not on the target surface of photodetector 70, then stepping wafer-supporting platform 7 is to next ferret out position, till searching exposure object mark 8 '; If the displacement of wafer-supporting platform 7 has exceeded the hunting zone of prior setting in the search procedure, then stop search, and upload again.
According to the position alignment flow process and the relative coordinate system transformational relation of mask 2, can calculate mask 2 position alignment after, translational movement and the rotation amount of the circuit pattern 3 on the mask in wafer-supporting platform zero-bit coordinate system; In like manner, according to the position alignment flow process and the relative coordinate system transformational relation of exposure object 6, after can calculating exposure object 6 back positions and aiming at, translational movement and the rotation amount of exposure object 6 in wafer-supporting platform zero-bit coordinate system; The position relation in wafer-supporting platform zero-bit coordinate system according to circuit pattern on the aforementioned mask version 3 and exposure object 6 can realize exposure field 9 and the accurate position alignment in exposure process of the circuit pattern 3 on the mask 2 on the exposure object 6.
Another embodiment of the present invention discloses a kind of double-sided alignment device as shown in Figure 7, is made up of a cover illumination path and two cover imaging optical paths.Wherein the lighting source emergent light covers the broadband scope of visible light to infrared light, and lighting unit 30 is made up of optical fiber and illuminated mirror group 31.Lighting unit 30, beam splitter prism 11, mirror unit 20, mask are formed mask mark illuminator; Lighting unit 30, beam splitter prism 11, mirror unit 20, mask 2, projection objective 1 are formed exposure object face exposure mark illuminator; Lighting unit 30, beam splitter prism 11, mirror unit 20, mask 2, projection objective 1, exposure object 6 are formed exposure object back-exposure mark illuminator.Visual light imaging unit 40 increases visible light filter plate 43, exposure mark imaging during to mask mark and exposure object face exposure; Near infrared light unit 60 increases near infrared light filter plate 63, exposure mark imaging during to the exposure object back-exposure.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (37)
1. coaxial double face position alignment system, be used for the biplane projection exposure device, be arranged at one comprise optical projection system, mask, hold bed, hold the bed motion control unit, on the projection aligner of exposure object, wafer-supporting platform, wafer-supporting platform motion control unit and overhead control device, it is characterized in that, comprising:
Be positioned at the double-surface position alignment device of mask top;
Be arranged at the mask mark on the mask;
Be positioned at the exposure object on the wafer-supporting platform;
Be arranged at the exposure object mark on the exposure object;
Wherein, described double-surface position alignment device by detect respectively positive to the punctual and back side to the positional information of punctual mask mark and exposure object mark and send to and hold bed and wafer-supporting platform motion control unit, adjust the position of mask and exposure object with the motion that bed and wafer-supporting platform are held in control, thereby realize on the exposure object on the double-edged exposure field and mask the accurate aligning of position between the circuit pattern;
Wherein, the positive aligning that adopts the visible light light path imaging to realize pattern on exposure field and the mask of aiming at, reverse side is aimed at the aligning that adopts the near infrared light light path imaging to realize pattern on exposure field and the mask, and described near infrared light light path and visible light light path be light path altogether.
2. coaxial double face position alignment system as claimed in claim 1 is characterized in that, the design wave band of optical projection system is 350nm-450nm, does not consider that optical projection system is at the aberration of aiming at wave band.
3. coaxial double face position alignment system as claimed in claim 1 is characterized in that, described double-surface position alignment device comprises condenser unit, image-generating unit, probe unit and detecting processing unit.
4. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described condenser comprises and is used for visible light-focusing mirror unit that visible illumination optical fiber emergent light is assembled.
5. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described condenser comprises and is used near infrared light condenser unit that near infrared light lighting fiber emergent light is assembled.
6. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described position alignment device also comprises the mirror unit that is used to satisfy the space structure size requirements and realizes the light path deviation.
7. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described image-generating unit comprises and is used for positive tense marker and the mask mark aimed at of exposure object is imaged onto visual light imaging unit on the photodetector target surface.
8. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described image-generating unit comprises that being used for that tense marker is aimed at the exposure object back side is imaged onto near infrared light imaging unit on the photodetector target surface.
9. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described position alignment device also comprises and is used for the first right angle beam splitter prism and the second right angle beam splitter prism that illumination light and imaging beam split are used.
10. coaxial double face position alignment system as claimed in claim 9 is characterized in that, described position alignment device also comprises and is used for the 3rd right angle beam splitter prism that visible light and the beam split of near infrared light light path are used.
11. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described probe unit comprises the visible light photodetector that is used to accept mask mark and the positive aligning of exposure object tense marker picture.
12. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described probe unit comprises the near infrared light photodetector that is used to accept exposure object back side aligning tense marker picture.
13. coaxial double face position alignment system as claimed in claim 3 is characterized in that, described detecting processing unit comprises and being used for being marked at the photodetection processing unit that the position is detected on the photodetector target surface.
14., it is characterized in that described condenser unit all is to be made of lighting fiber, condenser group, filter plate, is used for the emergent light of lighting fiber is assembled as claim 3,4 or 5 described coaxial double face position alignment systems.
15. coaxial double face position alignment system as claimed in claim 4 is characterized in that, adds the visible light filter plate at the visible light-focusing mirror unit, to prevent the ultraviolet light in the alignment light source photoresist on the exposure object is carried out sensitization.
16. coaxial double face position alignment system as claimed in claim 5 is characterized in that, adds the near infrared light filter plate near infrared light condenser unit, to prevent the ultraviolet light in the alignment light source photoresist on the exposure object is carried out sensitization.
17. coaxial double face position alignment system as claimed in claim 6 is characterized in that, described mirror unit by plane mirror, two right-angle prisms and before form as objective lens and constitute, be used to realize the light path deviation and satisfy the space structure size requirements.
18. coaxial double face position alignment system as claimed in claim 4, it is characterized in that, described position alignment device also comprises the mirror unit that is used to satisfy the space structure size requirements and realizes the light path deviation, and visible light-focusing mirror unit and mirror unit are formed mask mark illuminator, are used for the even illumination of mask mark.
19. coaxial double face position alignment system as claimed in claim 18, it is characterized in that, exposure object mark illuminator when visible light-focusing mirror unit, mirror unit, mask and optical projection system are formed the exposure object face exposure is used for the positive even illumination of aiming at tense marker of exposure object.
20. coaxial double face position alignment system as claimed in claim 5, it is characterized in that, described position alignment device also comprises the mirror unit that is used to satisfy the space structure size requirements and realizes the light path deviation, near infrared light illuminator when wherein near infrared light condenser unit, mirror unit, mask, optical projection system and exposure object are formed the exposure object back-exposure is used for the even illumination that tense marker is aimed at the exposure object back side.
21. coaxial double face position alignment system as claimed in claim 7 is characterized in that, the visual light imaging unit is made up of mechanical shutter, visual light imaging objective lens.
22. coaxial double face position alignment system as claimed in claim 8 is characterized in that, the near infrared light imaging unit is made up of mechanical shutter, near infrared light imaging objective lens.
23. coaxial double face position alignment system as claimed in claim 6, it is characterized in that, described position alignment device also comprises and is used for positive tense marker and the mask mark aimed at of exposure object is imaged onto visual light imaging unit on the photodetector target surface, and be used for the first right angle beam splitter prism and the second right angle beam splitter prism that illumination light and imaging beam split are used, wherein mask mark imaging system is formed in mirror unit, the first right angle beam splitter prism, the second right angle beam splitter prism and visual light imaging unit, is used for mask mark blur-free imaging at photodetector.
24. coaxial double face position alignment system as claimed in claim 23, it is characterized in that, mark imaging system when the exposure object face exposure is formed in optical projection system, mask, mirror unit, the first right angle beam splitter prism, the second right angle beam splitter prism and visual light imaging unit is used for exposure object face exposure tense marker blur-free imaging at photodetector.
25. coaxial double face position alignment system as claimed in claim 6, it is characterized in that, described position alignment device comprises that also being used for that tense marker is aimed at the exposure object back side is imaged onto near infrared light imaging unit on the photodetector target surface, be used for the first right angle beam splitter prism and the second right angle beam splitter prism that illumination light and imaging beam split are used, and be used for the 3rd right angle beam splitter prism that visible light and the beam split of near infrared light light path are used, exposure object wherein, optical projection system, mask, mirror unit, the first right angle beam splitter prism, the second right angle beam splitter prism, mark imaging system when the exposure object back-exposure is formed in the 3rd right angle beam splitter prism and near infrared light imaging unit is used for exposure object back-exposure tense marker blur-free imaging at photodetector.
26., it is characterized in that the right angle beam splitter prism is the plane beam splitting chip as claim 9 or 10 described coaxial double face position alignment systems.
27. coaxial double face position alignment system as claimed in claim 11 is characterized in that, the sensor of visible light photodetector is ccd sensor or cmos sensor.
28. coaxial double face position alignment system as claimed in claim 12 is characterized in that, the sensor of near infrared light photodetector is ccd sensor or cmos sensor.
29. coaxial double face position alignment system as claimed in claim 13 is characterized in that, the photodetection processing unit is used for the collection and the position of marking image on the photodetector target surface to be handled.
30. coaxial double face position alignment system as claimed in claim 6, it is characterized in that, described position alignment device also comprises and is used for positive tense marker and the mask mark aimed at of exposure object is imaged onto visual light imaging unit on the photodetector target surface, wherein the visual light imaging system of visual light imaging unit and mirror unit composition can proofread and correct and compensate at the aberration of aiming at wave band optical projection system.
31. coaxial double face position alignment system as claimed in claim 21, it is characterized in that, described position alignment device comprises that also being used for that tense marker is aimed at the exposure object back side is imaged onto near infrared light imaging unit on the photodetector target surface, and the near infrared light imaging unit is made up of mechanical shutter, near infrared light imaging objective lens, wherein by visual light imaging unit in the above-mentioned image-generating unit of opening and closing alternately and the mechanical shutter in the near infrared light imaging unit, to realize double-sided alignment to mask and exposure object.
32. a coaxial double face position alignment methods is characterized in that, comprises the following steps:
Carry out the front on time, make mask mark and exposure object front be marked as picture by the visible light light path, move and to hold bed and wafer-supporting platform moves in the alignment device field range of position mark, on visible light photodetector target surface, carry out imaging, and calculate the positional information be marked on the target surface by visible light photodetection processing unit, write down current positional information of holding the bed wafer-supporting platform simultaneously;
Carry out the back side on time, the mask mark is by described visible light light path imaging, the exposure object rear indicia is by the near infrared light light path imaging, described near infrared light light path and visible light light path be light path altogether, move and to hold bed the mask mark is moved in the alignment device visual field, position, mask is marked on the visible light photodetector target surface carries out imaging; Mobile wafer-supporting platform moves in the alignment device field range of position the exposure object rear indicia, exposure object is marked on the near infrared light photodetector target surface carries out imaging, and, write down current wafer-supporting platform positional information simultaneously by the positional information of mark processing unit calculation exposure object tag on target surface;
By the aforementioned mask marker location information, hold bed positional information, exposure object marker location information and wafer-supporting platform positional information, according to the alignment algorithm model, the translational movement and the rotation amount of the relative mask of calculation exposure object, the position of adjusting exposure object is accurately aimed at exposure object tow sides and mask.
33. position alignment method as claimed in claim 32 is characterized in that, according to the production efficiency needs, above-mentioned position alignment device is 1 cover or many covers; When the position alignment device is 2 covers when above, position alignment device optical axis with optical projection system on space layout is that the axle center is symmetrically distributed.
34. position alignment method as claimed in claim 32, it is characterized in that, when the exposure object front on time, open the mechanical shutter in the visual light imaging unit this moment, close the mechanical shutter in the near infrared light imaging unit simultaneously, making has mask mark and exposure object mark simultaneously on the visible light photodetector target surface.
35. position alignment method as claimed in claim 32, it is characterized in that, when the exposure object back side on time, open the mechanical shutter in the near infrared light imaging unit this moment, close the mechanical shutter in the visual light imaging unit simultaneously, make on the near infrared light photodetector target surface and have only the exposure object mark.
36. position alignment method as claimed in claim 32 is characterized in that, mask is on time, and according to mask position alignment precision needs, the quantity of mask mark is two at least.
37. position alignment method as claimed in claim 32 is characterized in that, exposure object is on time, and according to exposure object position alignment precision needs, the quantity of exposure object mark is two at least.
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| CN102063025B (en) * | 2009-11-13 | 2013-08-14 | 上海微电子装备有限公司 | Measurement method of two-faced registration error and lithographic equipment applying measurement method |
| CN102081312B (en) * | 2009-11-26 | 2012-08-29 | 上海微电子装备有限公司 | Double-sided alignment apparatus and alignment method thereof |
| CN102540781B (en) | 2010-12-28 | 2015-09-30 | 上海微电子装备有限公司 | A kind of backside alignment device and method |
| CN103197418B (en) * | 2012-01-10 | 2015-06-17 | 上海微电子装备有限公司 | Alignment 4 F optics system |
| CN103376197B (en) * | 2012-04-16 | 2015-08-19 | 苏州中导光电设备有限公司 | Solar battery sheet, silicon wafer backside optical detection system |
| KR20150028266A (en) * | 2012-06-01 | 2015-03-13 | 에이에스엠엘 네델란즈 비.브이. | An assembly for modifying properties of a plurality of radiation beams, a lithography apparatus, a method of modifying properties of a plurality of radiation beams and a device manufacturing method |
| CN104418295B (en) * | 2013-08-28 | 2016-12-28 | 无锡华润上华半导体有限公司 | Two-sided micro-processing method and MEMS for MEMS |
| CN103634516A (en) * | 2013-11-11 | 2014-03-12 | 成都市晶林电子技术有限公司 | Preprocessing lens |
| CN104808450B (en) * | 2014-01-24 | 2017-08-08 | 无锡华润上华半导体有限公司 | Dual surface lithography method |
| CN107290943B (en) * | 2016-03-31 | 2019-01-29 | 上海微电子装备（集团）股份有限公司 | Coaxial mask alignment equipment, lithographic equipment and alignment methods |
| CN109733051A (en) * | 2019-02-20 | 2019-05-10 | 安徽地势坤光电科技有限公司 | A kind of method for platemaking and forme-producing system without net netting version |
| CN111899218B (en) * | 2020-06-28 | 2023-09-05 | 中国电子科技集团公司第四十四研究所 | Detector coaxiality detection system and method based on camera image processing |
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