CN101382742B - Developing method for mask plate - Google Patents
Developing method for mask plate Download PDFInfo
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- CN101382742B CN101382742B CN200810216716XA CN200810216716A CN101382742B CN 101382742 B CN101382742 B CN 101382742B CN 200810216716X A CN200810216716X A CN 200810216716XA CN 200810216716 A CN200810216716 A CN 200810216716A CN 101382742 B CN101382742 B CN 101382742B
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- mask
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- dipper
- developer solution
- developing method
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Abstract
The present invention relates to a mask developing method which includes the following steps: a developing liquor is added into a liquor tank and heated for maintaining the developing liquor at a constant temperature; an exposed mask is put into the liquor tank and the mask is maintained a depth of 5 to 8cm beneath the liquid level in the liquor tank so as to ensure that the mask moves under the level and the mask is soaked in the developing liquor for developing. The mask developing method comprises the step that the mask is soaked in the developing liquor of the liquor tank at the constant temperature so as to ensure that the mask moves horizontally under the level of the developing liquor for developing, maintaining a speed of 3 to 5mm/s during mask developing. The operation during the whole developing process is simple and easy to realize, without expensive automation equipment, thereby greatly reducing technological costs. Furthermore, the mask is moved during the developing process so as to ensure that the mask can keep the reaction with the developing liquor during the developing process, thereby ensuring that the precision of developed patterns and lines meets the preset requirements.
Description
Technical field
The present invention relates in particular to a kind of developing method of mask about the mask manufacturing technology.
Background technology
Along with the develop rapidly of integrated circuit fabrication process, 45 and the 32nm technology node become the focus that nearly 2 years people talk about, standing in the breach as the photoetching process of most critical in the integrated circuit fabrication process becomes focus in the focus.Immersion lithography (Immersion), double exposure technique (Double Patterning), extreme ultraviolet photoetching (EUV) obtain to use widely, and the mask manufacturing technology is one of photoetching process three elements.The egative film of the cinefilm that mask is used as projection, its technical merit directly affects the development of photoetching technique.Along with the continuous lifting of process node, the manufacturing cost of mask is also linearly soaring.
In mask manufacturing process, development is a very crucial procedure, promptly by developing procedure, with on the mask by the figure moulding after the exposure machine exposure, and can accurately control the precision of pattern line.
Generally carry out development treatment in the prior art by automation equipment.But the robotization development of mask, etching machines belong to extraordinary chemical plant, cost an arm and a leg, and are subjected to the anchor clamps restriction, the difficult production that is fit to various sizes.Therefore, for professional mask manufacturer, need a kind of developing method of simple and feasible.
Summary of the invention
In view of this, be necessary to provide a kind of developing method of operating the mask simple and easy, that cost is low.
A kind of developing method of mask, it may further comprise the steps:
Developer solution is added in the dipper, and the developer solution in the heating dipper makes it remain on steady temperature;
The mask that exposure is good is put into dipper, keeps mask in dipper below the liquid level;
Mask is moved below liquid level, soak mask and in developer solution, develop.
Compared with prior art, the developing method of described mask is soaked in mask in the dipper developer solution of constant temperature, and mask is moved below the liquid level of developer solution, develop, operation is simple for whole developing process, need not expensive automation equipment, reduces the technology cost thus greatly.And, in developing process,, make resin energy and developer solution in the mask in the developing process keep reaction by mobile mask always, can make developing pattern lines precision reach required accuracy requirement.
Description of drawings
Fig. 1 is the developing method process flow diagram of the mask that provides of the embodiment of the invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 1, be the developing method process flow diagram of the mask of the embodiment of the invention, this developing method may further comprise the steps:
S01: developer solution is added in the dipper, and the developer solution in the heating dipper makes it remain on steady temperature;
S02: the good mask of will exposing is put into dipper, keeps mask in dipper below the liquid level;
S03: mask is moved below liquid level, soak mask and in developer solution, develop.
In step S01, developer solution adopts tetramethyl aqua ammonia (Tetramethyl AmmoniumHydroxide abbreviates TMAH as), and molecular formula is (CH
3)
4NOH.The mass concentration of TMAH is about 25-30%, uses fresh developer solution when developing at every turn.And before carry out this step, with the chemical liquid groove of washed with de-ionized water Polyvinylchloride making, this dipper can be a heated at constant temperature groove, promptly has the heated constant temperature function earlier; Open the heating function of dipper, with the dipper heating and remain on constant temperature, its temperature is set in 22-25 ℃; Then TMAH is added in the dipper warmly,, need to guarantee that the degree of depth of developer solution is about about 8-15cm according to the size of dipper, wait for that developer solution is after warm about 30 minutes, the concrete time decides according to the volume of developer solution, makes developer solution maintain design temperature, promptly 22-25 ℃.
After being ready to developer solution, carry out step S02, be about to the good mask of exposure and slip in the dipper with one side example earlier, keep the mask level to be immersed in the degree of depth of the following 5-8cm of liquid level simultaneously.Make mask keep the soaking depth of 5-8cm then, keep the velocity level's move left and right mask about about 3-5mm/s simultaneously in the developing process, to eliminate the bubble phenomenon that in developing process, produces.According to the difference of exposure, soaking development time is 50-70 second.
In whole each step of development operation process, can finish by manual operations, for example, by hand-held mask, slip into the one avris in the dipper earlier, the two-handed hand-held mask makes its degree of depth that is immersed in the following 5-8cm of liquid level, simultaneously with the mask that moves around about hand simultaneously, make mask energy and developer solution in the developing process keep reaction always, and can select bigger dipper,, develop as the quartzy chromium plate of large tracts of land with at large-area mask.Present embodiment can reach 20 inches * 24 inches sizes with interior various mask dimensioned area in, developing pattern lines precision reaches the requirement of 0.5 micron precision.
The developing method of the mask of the embodiment of the invention is applicable to the quartzy chromium plate of large tracts of land, and at the characteristics that size is big, precision is high of the quartzy chromium plate of large tracts of land, the be correlated with various conditions controls such as selection, visualization way of developer solution and concentration thereof of specific aim, and in developing process, move mask by certain gimmick, make resin energy and developer solution in the photoresist in the developing process keep reaction always, and finally can reach the development of large tracts of land mask, and the lines precision reaches the requirement of 0.5 micron precision.
The developing method of the mask of the embodiment of the invention is soaked in mask in the dipper developer solution of constant temperature, mask is moved below the liquid level of developer solution, develop, operation is simple for whole developing process, need not expensive automation equipment, reduce the technology cost thus greatly.And, in developing process,, make resin energy and developer solution in the mask in the developing process keep reaction by mobile mask always, can make developing pattern lines precision reach pre-provisioning request.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the developing method of a mask, it may further comprise the steps:
Developer solution is added in the dipper, and the developer solution in the heating dipper makes it remain on steady temperature;
The mask that exposure is good is put into dipper, keeps the degree of depth of following 5-8 centimetre of mask liquid level in dipper;
Mask is moved horizontally below liquid level, soak mask and develop in developer solution, keeping the described speed that moves horizontally in developing process is the 3-5 mm/second.
2. the developing method of mask as claimed in claim 1 is characterized in that, the degree of depth of described developer solution in dipper is 8-15 centimetre.
3. the developing method of mask as claimed in claim 1 is characterized in that, described dipper is the heated at constant temperature groove, and it carried out preheating and remained on described steady temperature before developer solution adds, then developer solution is added carry out in the dipper warm.
4. the developing method of mask as claimed in claim 3 is characterized in that, the temperature of described preheating is 22-25 ℃.
5. the developing method of mask as claimed in claim 1 is characterized in that, described developer solution comprises the tetramethyl aqua ammonia that mass concentration is 25-30%.
6. the developing method of mask as claimed in claim 1 is characterized in that, described mask puts into dipper, move below liquid level and developing process is all operated by manual.
7. the developing method of mask as claimed in claim 1 is characterized in that, it is 50-70 second that described mask is soaked in the time of developing in the developer solution.
8. the developing method of mask as claimed in claim 1 is characterized in that, after each development is finished, cleans dipper, and then adds fresh developer solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810216716XA CN101382742B (en) | 2008-10-15 | 2008-10-15 | Developing method for mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810216716XA CN101382742B (en) | 2008-10-15 | 2008-10-15 | Developing method for mask plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101382742A CN101382742A (en) | 2009-03-11 |
| CN101382742B true CN101382742B (en) | 2011-10-05 |
Family
ID=40462642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810216716XA Active CN101382742B (en) | 2008-10-15 | 2008-10-15 | Developing method for mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101382742B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108469718A (en) * | 2018-04-20 | 2018-08-31 | 无锡中微掩模电子有限公司 | A kind of developing method and device of mask |
| CN111273523A (en) * | 2020-04-09 | 2020-06-12 | 江苏普诺威电子股份有限公司 | PCB developing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6692164B2 (en) * | 1999-11-19 | 2004-02-17 | Oki Electric Industry Co, Ltd. | Apparatus for cleaning a substrate on which a resist pattern is formed |
| CN1591180A (en) * | 2003-08-29 | 2005-03-09 | 中芯国际集成电路制造(上海)有限公司 | Mask mfg. method |
| CN1646884A (en) * | 2002-04-04 | 2005-07-27 | 麦克罗尼克激光系统公司 | A mask blank and a method for producing the same |
| CN1740908A (en) * | 2005-09-15 | 2006-03-01 | 浙江大学 | Method for producing quartz/Az photoresist ultraviolet photoetched mask |
| CN1761913A (en) * | 2003-03-28 | 2006-04-19 | Hoya株式会社 | Method of manufacturing mask blank |
-
2008
- 2008-10-15 CN CN200810216716XA patent/CN101382742B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6692164B2 (en) * | 1999-11-19 | 2004-02-17 | Oki Electric Industry Co, Ltd. | Apparatus for cleaning a substrate on which a resist pattern is formed |
| CN1646884A (en) * | 2002-04-04 | 2005-07-27 | 麦克罗尼克激光系统公司 | A mask blank and a method for producing the same |
| CN1761913A (en) * | 2003-03-28 | 2006-04-19 | Hoya株式会社 | Method of manufacturing mask blank |
| CN1591180A (en) * | 2003-08-29 | 2005-03-09 | 中芯国际集成电路制造(上海)有限公司 | Mask mfg. method |
| CN1740908A (en) * | 2005-09-15 | 2006-03-01 | 浙江大学 | Method for producing quartz/Az photoresist ultraviolet photoetched mask |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101382742A (en) | 2009-03-11 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHENZHEN QINGYI PRECISION MASKMAKING CO., LTD. Free format text: FORMER NAME: QINGYI PRECISION MASK MAKING (SHENZHEN) CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Two road high tech Industrial Zone in Shenzhen city Guangdong province 518057 North Song Ping Lang mountain No. 8 Patentee after: Qingyi Precision Maskmaking (Shenzhen) Co., Ltd. Address before: Two road high tech Industrial Zone in Shenzhen city Guangdong province 518057 North Song Ping Lang mountain No. 8 Patentee before: Qingyi Precision Mask Making (Shenzhen) Co., Ltd. |