CN1646884A - A mask blank and a method for producing the same - Google Patents
A mask blank and a method for producing the same Download PDFInfo
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- CN1646884A CN1646884A CNA038075148A CN03807514A CN1646884A CN 1646884 A CN1646884 A CN 1646884A CN A038075148 A CNA038075148 A CN A038075148A CN 03807514 A CN03807514 A CN 03807514A CN 1646884 A CN1646884 A CN 1646884A
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- writing
- mask plate
- film
- wavelength
- sensitization
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
An aspect of the present invention includes a method for manufacturing a mask blank. A substrate is provided. A masking layer is formed on said substrate. At least one layer of material is formed on said substrate such that a reflectivity of a writing wavelength to a film sensitive to the writing wavelength is below 4 %. Other aspects of the present invention are reflected in the detailed description, figures and claims.
Description
Technical field
The present invention relates to a kind of manufacture method of substrate, more properly, relate to the mask plate (mask blank) that uses described substrate or the manufacture method of graticule (reticle blank).The invention still further relates to the manufacture method of mask substrate and graduation substrate.
Background technology
Problem solved by the invention relates to the difficulty of making enough accurate and high-resolution mask.More properly, relate to the use that chemistry amplifies resist.This chemistry amplifies the mask manufacturing that resist (CAR) is used to use DUV radiation (the ETEC ALTA 4000 that is in the MiCronic SIGMA 7100 of 248nm and is in 257nm) and uses electron beam (several sources of supply).This resist also is used for the laser pattern generator (being published by DNP research) at 364nm place.The use that this chemistry amplifies resist is for some reason: in the ISO of shortwave strong point, and the high-contrast and the high grade of transparency.
The general considerations that relates to CAR is its light sensitivity to multiple time delay: use from the back and cure (PAB) to exposure; If the exposure between exposure period is extended, as in mask pattern generator; And between exposure and post-exposure bake (PEB).Before the PAB and after PEB, it is considered to stable usually.Light sensitivity to the prolongations of the variation in these time delays and these time delays, cause the change in edge contour and CD measurement, this light sensitivity partly be since in resist interior with spontaneous reaction, partly owing to pollution from surrounding environment, partly since with the reaction that is used in the other materials in the mask plate, particularly chromium self.
Fig. 1 has represented the mask plate according to prior art.It has substrate 101, and is normally quartzy, but in reflection EUV mask, can be any stable material, for example silicon or super-low expansion (ULE) glass or pottery.Chromium 102 quilts are coated with part anti-reflecting layer 103, and this part anti-reflecting layer typically is chromium oxide or chromium nitride.Chromium is splashed on the quartz substrate and the AR coating is splashed on it, has formed to be typically the thick binding film of 70-100nm.Resist 104 is applied to AR layer 103 top.From the pollutant of surrounding environment can be form with amine, ammonia or other nitrogen-containing compounds of ppb concentration.Technological process also is subjected to the oxygen in the atmosphere or the influence of water, but effect is littler, and also different to dissimilar resist chemical substances.
When shifting to littler size, need to use the depth of focus (depth-of-focus) disappearance and the resist image of thinner resist when avoiding being used to having the small-feature-size of high aperture ratio to damage.This mentions in another patented claim of identical inventor, US 09/664288, and is hereby incorporated by.This application discloses a kind of multilayer pattern transfer method of mask and similar products with very small feature size made.This is applicable to and uses 157nm light and use the graduation of EUV to write (reticlewritten).In the near future, the chemical monolayer amplification technique with the control of high stability and good live width is to be worth expectation.Hereinafter this technology will be described.
Find, when chemistry amplifies on the mask substrate that resist is used for Fig. 2, can not provide perfect results.The reflectivity of chromium has caused standing wave, and as represented by a plurality of cavitys 201 in the resist section in Fig. 2, and the chemical activity on chromium oxide surface has caused the bottom (foot) 202 in the resist section.Particularly, because the vertical sidewall that needs cleaning to be being used for good size Control, thereby this bottom is thorny.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of method for preparing the method for mask plate and make following mask plate, this mask plate overcomes or has reduced the problems referred to above at least.
This purpose among other purposes is according to a first aspect of the invention, promptly by make mask plate method realized, this method comprises: a substrate is provided; On described substrate, form a mask layer; Thereby forming at least one material layer on described substrate makes one to write wavelength (writingwavelength) and be lower than 4% for the reflectivity of this being write the film of wavelength sensitization.
In according to another embodiment of the present invention, described reflectivity is lower than 2%.
In according to another embodiment of the present invention, described reflectivity is lower than 1%.
In according to another embodiment of the present invention, described reflectivity is lower than 0.5%.
In according to another embodiment of the present invention, a silicon compound is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, described mask material comprises silicon.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 300nm.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 200nm.
In according to another embodiment of the present invention, described at least one material layer comprises oxynitride.
In another embodiment, described invention also comprises and uses one to write the wavelength exposure at least a portion of the described described film of writing wavelength sensitization and the operation of the mask plate of the described exposure of etching in the gaseous mixture that comprises chlorine or fluorine.
In according to another embodiment of the present invention, the described described film of writing wavelength sensitization had low-activation energy.
In according to another embodiment of the present invention, be that chemistry amplifies resist (CAR) to the described described film of writing wavelength sensitization.
Described in another embodiment invention also comprises uses one to write the wavelength exposure and stop at operation to the reaction in the described described film of writing wavelength sensitization at least a portion of the described described film of writing wavelength sensitization and by being exposed to alkali (base).
Described in another embodiment invention also comprises the operation that slows down the reaction that is caused by exposure by the ambient gas with low humidity.
Described in another embodiment invention also comprises the operation that forms viscosity promoter film.
The invention still further relates to the method for making mask plate, comprise following operation: provide a substrate; Thereby forming a mask layer on the described substrate and form feasible the facing a surface of writing the film of wavelength sensitization of at least one material layer on described substrate is chemically inert.
In according to another embodiment of the present invention, the described wavelength of writing is lower than 4% for the reflectivity of this being write the described film of wavelength sensitization.
In according to another embodiment of the present invention, described reflectivity is lower than 2%.
In according to another embodiment of the present invention, described reflectivity is lower than 1%.
In according to another embodiment of the present invention, described reflectivity is lower than 0.5%.
In according to another embodiment of the present invention, a silicon compound is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, described mask material comprises silicon.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 300nm.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 200nm.
In according to another embodiment of the present invention, at least one material layer comprises oxynitride.
In another embodiment, described invention also comprises and uses one to write the wavelength exposure at least a portion of the described described film of writing wavelength sensitization and the operation of the mask plate of the described exposure of etching in the gaseous mixture that comprises chlorine or fluorine.
In according to another embodiment of the present invention, the described described film of writing wavelength sensitization had low-activation energy.
In according to another embodiment of the present invention, be that chemistry amplifies resist (CAR) to the described described film of writing wavelength sensitization.
Described in another embodiment invention also comprises uses one to write the wavelength exposure and stop at operation to the reaction in the described described film of writing wavelength sensitization at least a portion of the described described film of writing wavelength sensitization and by being exposed to alkali (base).
Described in another embodiment invention also comprises the operation that slows down the reaction that is caused by exposure by the ambient gas with low humidity.
The invention still further relates to a kind of mask plate, comprising: a substrate; Mask layer on described substrate; And thereby at least one material layer on described substrate makes one to write wavelength and be lower than 4% for the reflectivity of this being write the film of wavelength sensitization.
In according to another embodiment of the present invention, described reflectivity is lower than 2%.
In according to another embodiment of the present invention, described reflectivity is lower than 1%.
In according to another embodiment of the present invention, described reflectivity is lower than 0.5%.
In according to another embodiment of the present invention, a silicon compound is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, described mask material comprises silicon.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 300nm.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 200nm.
In according to another embodiment of the present invention, described at least one material layer comprises oxynitride.
In according to another embodiment of the present invention, the described described film of writing wavelength sensitization had low-activation energy.
In according to another embodiment of the present invention, be that chemistry amplifies resist (CAR) to the described described film of writing wavelength sensitization.
Described in another embodiment invention also comprises a viscosity promoter film.
The invention still further relates to a kind of mask plate, comprising: a substrate; Mask layer on described substrate; And thereby at least one material layer on described substrate makes that it is chemically inert facing a surface of writing the film of wavelength sensitization.
In according to another embodiment of the present invention, the described wavelength of writing is lower than 4% for the reflectivity of this being write the described film of wavelength sensitization.
In according to another embodiment of the present invention, described reflectivity is lower than 2%.
In according to another embodiment of the present invention, described reflectivity is lower than 1%.
In according to another embodiment of the present invention, described reflectivity is lower than 0.5%.
In according to another embodiment of the present invention, a silicon compound is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
In according to another embodiment of the present invention, described mask material comprises silicon.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 300nm.
In according to another embodiment of the present invention, to the thickness of the described described film of writing wavelength sensitization less than 200nm.
In according to another embodiment of the present invention, described at least one material layer comprises oxynitride.
In according to another embodiment of the present invention, the described described film of writing wavelength sensitization had low-activation energy.
In according to another embodiment of the present invention, be that chemistry amplifies resist (CAR) to the described described film of writing wavelength sensitization.
Described in another embodiment invention also comprises a viscosity promoter film.
Further characteristic of the present invention and advantage thereof will become more obvious by detailed description and the accompanying drawing 1-7 to the preferred embodiment of the present invention that hereinafter provides, and description of a preferred embodiment and accompanying drawing only are used for explanation rather than limitation of the invention.
Description of drawings
Fig. 1 has represented optical mask plate of the prior art, and it has quartz base plate, by the coating that the Cr layer is formed, CrO
xN
yAnd resist;
Fig. 2 has represented typical resist section in the prior art;
Fig. 3 has represented one embodiment of the invention, and it has quartz base plate, comprises the coating of Cr, antireflecting coating, chemical inertness top layer, and resist;
Fig. 4 has represented the typical resist section by manufacturing of the present invention;
Fig. 5 has represented the diffusion of the acid that runs in the prior art;
Fig. 6 has represented the diffusion of acid when using substrate of the present invention/mask plate;
Fig. 7 has represented the manufacture method of mask plate.
Embodiment
Be described in detail with reference to the accompanying drawings.Describe preferred embodiment and be for the present invention is described, rather than restriction the scope of the invention defined by the claims.Those of ordinary skills will appreciate that and can carry out the multiple variation that is equal to following description.
The invention discloses a kind of mask substrate with improvement of improved antireflecting coating, this antireflecting coating has lower chemical activity and/or better antireflective properties.
One embodiment of the invention as shown in Figure 3.Described embodiment has substrate 301 and mask layer 302, typically is chromium, has anti-reflecting layer 303, chemical inertness top layer 304 and resist layer 305.This anti-reflecting layer 303 and chemical inertness layer 304 can comprise one or more laminations.The top surface layer does not contain chromium and comprises chemical inert material, for example silicon dioxide or silicon oxynitride.Thereby described lamination is optimised the antiradar reflectivity that is given between resist and the coating.When removing resist, aerial reflectivity is about 6%.Antiradar reflectivity between lamination and resist has been removed the standing wave that forms in the prior art.
Existing mask plate has 6% or higher reflectivity between resist and chromium lamination, thereby has provided the periodic modulation of 2: 1 local irradiation dosage.Use post exposure bake to remove standing wave.This post-exposure is crucial treatment step, must strictly control avoiding and make a mistake.Removing the required diffusion of standing wave also influences process range negatively, particularly for little characteristic dimension.
Have many possible structures in General Definition scope of the present invention, these structures can be used commercial film program, for example basic MacLeud studies and optimizes.By ellipsometer (Sopra for example, Plasmos, Woolam) or reflectometer (Nanometrics, Perkin Elmers, BioRad, n﹠amp; K), can obtain experimental data for material and the design checking.
Fig. 4 has represented to use the resist section of substrate/mask plate of the present invention.
Fig. 5 has represented the mechanism of the resist section back in Fig. 2.Exposure light 501 shines on the resist 502 and produces acid 503.Acid molecule at room temperature part spontaneously and partly during post-exposure bake along mobile route (random-walk path) 504 diffusions at random, and activate (" surrender is protected " de-protection) chemistry and amplify resist and make it in developer, become solvable.The effect on resist and the length of the evolving path are proportional.Yet, when an acid molecule catalytic oxidation chromium surface 505, it otherwise be neutralized, or be bound in 506 places, thereby make it not continue diffusion.Binding energy can be quite little and freely spreading of hindered acid still.The result is reversed exhausting of the described acid of diffusion gradient.
Fig. 6 has represented identical in the present invention diffusion.Described chemical inertness top layer is not in conjunction with acid and do not have exhausting of acid.Therefore there is not the bottom.
Used similar in the manufacturing of mask plate of the present invention and the prior art, but the difference to some extent of filling a prescription accurately.Come deposit chromium and anti-reflective film lamination by sputter.SiO
2Thin layer is splashed to the anti-reflective film top.Mask plate is subjected to viscosity promoter and handles, HMDS for example, and resist is by spin coating.Cure mask plate then to evict solvent from and to compress resist film, this resist film is examined and is exposed until it by carrying/storage.
Photomask has the optical density more than about 3 or at least 2.5.With denary logarithm decay, optical density is 3 to mean 0.001 transmissivity to optical density in transmission.
It below is the prescription that provides desired result with the thick lamination of 90nm.Reflection between resist and coating be 0.8% and optical density be 3.3.
Cr 0.85-j 2.01, thickness 68nm,
SiO
xN
y2.12-j 0.50, thickness 22nm,
Wherein j is the imaginary part of complex index.
Below prescription has the SiO of stoichiometry (stoechiometric)
2Thereby top layer further improves chemical inertness and reflectivity.It has 0.3% reflection and optical density is 2.8.
Cr 0.85-j 2.01, thickness 55nm,
SiO
xN
y2.12-j 0.50, thickness 22nm,
SiO
21.50, thickness 10nm
By to SiO
xN
yOxygen plasma treatment is carried out on the surface, can obtain the superficial layer of oxidation in first prescription.
The CrO of more approaching present use
xN
yAnother prescription have 0.6% reflectivity and 3.0 optical density.
Cr 0.85-j 2.01, thickness 60nm,
CrO
xN
y2.12-j 0.80, thickness 20nm,
SiO
21.50, thickness 10nm
CrO
xN
yAnd SiO
xN
yThe characteristic manufacturing that all can change and under specific situation thickness and/or technological parameter must carry out optimizing empirically.The foregoing description calculates based on the refractive index in common field.Also can use other chemical inertness compounds to make the surface that does not contain chromium with good characteristic.But use silicon compound to have a lot of benefits.The silicon face chemical substance by known to the public and viscosity promoter and other surface modifiers by known to the public and understand.Make SiO
2And SiO
xN
ySeveral technologies of film are available, comprise evaporation and sputter, reaction equation evaporation and sputter, CVD and plasma deposition.Silex glass has the extraordinary viscosity to chromium, perhaps for metallic chromium or for chromium oxide.
In another different embodiment, use the silicon substitute chromium.Silicon has higher complex index than Cr at the 248nm place, so lamination is thinner than Cr.In addition, silicon is easy to etching and has better dry etching selection to resist, thereby provides more stable technological process and can use thinner resist.Following lamination has 0.0% reflection and 2.7 optical density.
Si 1.69-j 2.76, thickness 40nm,
CrO
xN
y2.12-j 0.80, thickness 27nm,
SiO
21.50, thickness 10nm
Identical materials can be used for the work at 193nm place, although the optimum thickness of different layers has small difference.
The problem of time delay in the mask duplicator (mask-writer) is that they are long and is uncertain to a certain extent.The light pattern generator has in the area that is capped is proportional writes the time, but some place, synthetic water plane system have to stop and etc. pending data, caused certain unpredictability for technology.
For the long time of writing, use the resist of low-activation energy to have advantage, for example by Clariant provided by name 1100 resist or by the resist of the KRS by name that IBM provided, wherein, the surrender of resist is protected at room temperature and spontaneously taken place.This is accompanied by the diffusion of acid usually.It is unnecessary but its diffusion of having removed any acid of leaving over and having caused eliminating standing wave that final PEB protects for surrender.Use is according to mask plate of the present invention, do not have standing wave or has the standing wave of minute quantity.
Can be by developing or stopping to handle the diffusion that stops acid, wherein mask plate is exposed to the amine of high concentration, ammonia or other alkali.Yet the simplest stop the diffusion be the development panel.Do several advantages like this: do not cure and remove one of one of source greatly that CD changes and process deviation.The influence that has reduced the long delay time is protected in spontaneous surrender after the exposure of any from the teeth outwards point.
The acid of leaving over has caused diffusion and can provide the CD error that depends on delay.Yet it can be predicted and in advance by precompensation.Write strategy and mentioned and provided almost constant CD effect by identical inventor in U.S. Patent application 09/664288, it can be corrected by dosage or the processing by data.In the described method of exposed mask motherboard (reticle), used multiple exposure approach (exposure pass), wherein said exposure approach is formed on first and second directions, and first and second directions are relative substantially.
The formulism of some photoresist needs the appearance of water to protect so that surrender to take place.Here it is why chemistry amplify the reason that resist can be used for electron beam system with 24 hours or the longer time of writing.Use dry atmosphere in the light pattern generator that is to work in the air, slowed down surrender during writing and protected and reduced the influence that postpones, as long as mask plate and water shielding.Dry atmosphere has caused the problem of charging and static, these problems must be processed with alleviate, for example use ionizer.Use dry air to purify duplicator.Load-lock (load lock) guarantees not have outside air to enter into obturator.
In plasma, use chlorine etching silicon base film.This chemical process with etching chromium is identical, thereby these two kinds of films all can be etched in identical gaseous mixture.For being the mask of silicon entirely, can optimizing etching and do not consider the etching needs of chromium.
For of the optical registration of chromium (or equivalent material) pattern to the second layer, the important difference that is between the resist of the resist of a side and substrate and opposite side and chromium lamination, to exist reflectivity.Above-mentioned prescription provided only be used for DUV near 0 reflectivity, therefore non-Optochemical sensor is useful.Can in transmission or reflection, check at the different wave length place, but for the inspection of reflecting the medium wave strong point, antiradar reflectivity is a problem.
Although the example of front is illustrated according to a kind of method, it is understandable making in this way device and system.The magnetic store that comprises the program that can put into practice the method that requires is a kind of such device.Computer system with storer of the program that loads the practice method that requires is another kind of such device.
It is evident that to apply the present invention to news, for example other wavelength and material.The reflection graticule that is used for EUV is one and significantly uses.Can use other outer mask materials of dechromisation, and the chemical inertness layer can be based on other compounds except that silicon compound.An example is to use diamond carbon film.
Although with reference to preferred embodiment and the example described in detail above the present invention is disclosed, be understood that these examples are to be used for illustrative purposes rather than to be used for limiting.Those skilled in the art can make amendment and merge the present invention, and these modifications and merging still are in the scope of purport of the present invention and claims.
Claims (61)
1. method of making mask plate comprises:
One substrate is provided;
On described substrate, form a mask layer;
Thereby forming at least one material layer on described substrate makes one to write wavelength and be lower than 4% for the reflectivity of this being write the film of wavelength sensitization.
2. according to the process of claim 1 wherein that described reflectivity is lower than 2%.
3. according to the process of claim 1 wherein that described reflectivity is lower than 1%.
4. according to the process of claim 1 wherein that described reflectivity is lower than 0.5%.
5. according to the process of claim 1 wherein that a silicon compound is in the face of to the described described film of writing wavelength sensitization.
6. according to the process of claim 1 wherein that a silicon dioxide layer is in the face of to the described described film of writing wavelength sensitization.
7. according to the process of claim 1 wherein that described mask material comprises silicon.
8. according to the process of claim 1 wherein that thickness to the described described film of writing wavelength sensitization is less than 300nm.
9. according to the process of claim 1 wherein that thickness to the described described film of writing wavelength sensitization is less than 200nm.
10. according to the process of claim 1 wherein that described at least one material layer comprises oxynitride.
11., also comprise following operation according to the method for claim 1:
Use one to write the wavelength exposure to described at least a portion of writing the described film of wavelength sensitization,
The mask plate of the described exposure of etching in comprising the gaseous mixture of chlorine.
12., also comprise following operation according to the method for claim 1:
Use one to write the wavelength exposure to described at least a portion of writing the described film of wavelength sensitization,
The mask plate of the described exposure of etching in comprising the gaseous mixture of fluorine.
13. the described described film of writing wavelength sensitization is had low-activation energy according to the process of claim 1 wherein.
14. according to the process of claim 1 wherein to the described described film of writing wavelength sensitization is that chemistry amplifies resist.
15., also comprise following operation according to the method for claim 1:
Use one is write wavelength and is made at least a portion exposure of writing the described film of wavelength sensitization to described,
Stop at the reaction in the described described film of writing wavelength sensitization by being exposed to alkali.
16., also comprise following operation according to the method for claim 12 or 15:
Slow down the reaction that causes by exposure by ambient gas with low humidity.
17., also comprise following operation according to the method for claim 1:
Form viscosity promoter film.
18. a method of making mask plate comprises following operation:
One substrate is provided;
On described substrate, form a mask layer;
Thereby on described substrate, form at least one material layer and make that it is chemically inert facing a surface of writing the film of wavelength sensitization.
19. according to the method for claim 18, the wherein said wavelength of writing is lower than 4% for the reflectivity of this being write the described film of wavelength sensitization.
20. according to the method for claim 18, wherein said reflectivity is lower than 2%.
21. according to the method for claim 18, wherein said reflectivity is lower than 1%.
22. according to the method for claim 18, wherein said reflectivity is lower than 0.5%.
23. according to the method for claim 18, wherein a silicon compound is faced the described described film of writing wavelength sensitization.
24. according to the method for claim 18, wherein a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
25. according to the method for claim 18, wherein said mask material comprises silicon.
26. according to the method for claim 18, wherein to the thickness of the described described film of writing wavelength sensitization less than 300nm.
27. according to the method for claim 18, wherein to the thickness of the described described film of writing wavelength sensitization less than 200nm.
28. according to the method for claim 18, wherein at least one material layer comprises oxynitride.
29., also comprise following operation according to the method for claim 18:
Use one to write the wavelength exposure to described at least a portion of writing the described film of wavelength sensitization,
The mask plate of the described exposure of etching in comprising the gaseous mixture of chlorine.
30., also comprise following operation according to the method for claim 18:
Use one to write the wavelength exposure to described at least a portion of writing the described film of wavelength sensitization,
The mask plate of the described exposure of etching in comprising the gaseous mixture of fluorine.
31., wherein the described described film of writing wavelength sensitization is had low-activation energy according to the method for claim 29.
32., be that chemistry amplifies resist wherein to the described described film of writing wavelength sensitization according to the method for claim 18.
33., also comprise following operation according to the method for claim 32:
Use one to write the wavelength exposure to described at least a portion of writing the described film of wavelength sensitization,
Stop at the reaction in the described described film of writing wavelength sensitization by being exposed to alkali.
34., also comprise following operation according to the method for claim 29 or 32:
Slow down the reaction that causes by exposure by ambient gas with low humidity.
35. a mask plate comprises:
One substrate;
Mask layer on described substrate;
Thereby at least one material layer on described substrate makes one to write wavelength and be lower than 4% for the reflectivity of this being write the film of wavelength sensitization.
36. according to the mask plate of claim 35, wherein said reflectivity is lower than 2%.
37. according to the mask plate of claim 35, wherein said reflectivity is lower than 1%.
38. according to the mask plate of claim 35, wherein said reflectivity is lower than 0.5%.
39. according to the mask plate of claim 35, wherein a silicon compound is faced the described described film of writing wavelength sensitization.
40. according to the mask plate of claim 35, wherein a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
41. according to the mask plate of claim 35, wherein said mask material comprises silicon.
42. according to the mask plate of claim 35, wherein to the thickness of the described described film of writing wavelength sensitization less than 300nm.
43. according to the mask plate of claim 35, wherein to the thickness of the described described film of writing wavelength sensitization less than 200nm.
44. according to the mask plate of claim 35, wherein said at least one material layer comprises oxynitride.
45., wherein the described described film of writing wavelength sensitization is had low-activation energy according to the mask plate of claim 35.
46., be that chemistry amplifies resist wherein to the described described film of writing wavelength sensitization according to the mask plate of claim 35.
47. the mask plate according to claim 35 also comprises:
One viscosity promoter film.
48. a mask plate comprises:
One substrate;
Mask layer on described substrate;
Thereby at least one material layer on described substrate makes that it is chemically inert facing a surface of writing the film of wavelength sensitization.
49. according to the mask plate of claim 48, the wherein said wavelength of writing is lower than 4% for the reflectivity of this being write the described film of wavelength sensitization.
50. according to the mask plate of claim 48, wherein said reflectivity is lower than 2%.
51. according to the mask plate of claim 48, wherein said reflectivity is lower than 1%.
52. according to the mask plate of claim 48, wherein said reflectivity is lower than 0.5%.
53. according to the mask plate of claim 48, wherein a silicon compound is faced the described described film of writing wavelength sensitization.
54. according to the mask plate of claim 48, wherein a silicon dioxide layer is faced the described described film of writing wavelength sensitization.
55. according to the mask plate of claim 48, wherein said mask material comprises silicon.
56. according to the mask plate of claim 48, wherein to the thickness of the described described film of writing wavelength sensitization less than 300nm.
57. according to the mask plate of claim 48, wherein to the thickness of the described described film of writing wavelength sensitization less than 200nm.
58. according to the mask plate of claim 48, wherein said at least one material layer comprises oxynitride.
59., wherein the described described film of writing wavelength sensitization is had low-activation energy according to the mask plate of claim 48.
60., be that chemistry amplifies resist wherein to the described described film of writing wavelength sensitization according to the mask plate of claim 48.
61. the mask plate according to claim 48 also comprises
One viscosity promoter film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE02010197 | 2002-04-04 | ||
| SE0201019A SE0201019D0 (en) | 2002-04-04 | 2002-04-04 | A mask blank and a method for producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1646884A true CN1646884A (en) | 2005-07-27 |
Family
ID=20287484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA038075148A Pending CN1646884A (en) | 2002-04-04 | 2003-04-01 | A mask blank and a method for producing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20050221199A1 (en) |
| EP (1) | EP1490657A1 (en) |
| JP (1) | JP2005521915A (en) |
| CN (1) | CN1646884A (en) |
| AU (1) | AU2003223150A1 (en) |
| SE (1) | SE0201019D0 (en) |
| WO (1) | WO2003085362A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101382742B (en) * | 2008-10-15 | 2011-10-05 | 清溢精密光电（深圳）有限公司 | Developing method for mask plate |
| CN101713914B (en) * | 2008-10-01 | 2013-06-12 | 台湾积体电路制造股份有限公司 | Photomask and method of fabricating a photomask |
| CN105051622A (en) * | 2013-03-19 | 2015-11-11 | 尼瓦洛克斯-法尔股份有限公司 | Resonator with reduced sensitivity to climatic variations |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424264B (en) * | 2005-09-30 | 2014-01-21 | Hoya Corp | A mask blank and its manufacturing method, manufacturing method of a mask, and manufacturing method of a semiconductor device |
| CN102005619A (en) * | 2010-10-09 | 2011-04-06 | 合肥锂鑫能源材料有限公司 | Redox couple for lithium ion battery overcharge-resistant mixed additive |
| JP6258151B2 (en) * | 2013-09-25 | 2018-01-10 | 信越化学工業株式会社 | Photomask blank and manufacturing method thereof |
| US10401724B2 (en) * | 2017-11-07 | 2019-09-03 | Globalfoundries Inc. | Pellicle replacement in EUV mask flow |
| US11111176B1 (en) * | 2020-02-27 | 2021-09-07 | Applied Materials, Inc. | Methods and apparatus of processing transparent substrates |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4617252A (en) * | 1983-07-01 | 1986-10-14 | Philip A. Hunt Chemical Corporation | Antireflective coatings for use in the manufacture of semi-conductor devices, methods and solutions for making such coatings, and the method for using such coatings to absorb light in ultraviolet photolithography processes |
| JPS61232457A (en) * | 1985-04-09 | 1986-10-16 | Asahi Glass Co Ltd | Improved photomask blank and photomask |
| AU6417499A (en) * | 1998-10-08 | 2000-04-26 | Rochester Institute Of Technology | Photomask for projection lithography at or below about 160 nm and a method |
| US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
| SG106599A1 (en) * | 2000-02-01 | 2004-10-29 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| JP3410707B2 (en) * | 2000-04-19 | 2003-05-26 | 松下電器産業株式会社 | Pattern forming material and pattern forming method |
| US6380067B1 (en) * | 2000-05-31 | 2002-04-30 | Advanced Micro Devices, Inc. | Method for creating partially UV transparent anti-reflective coating for semiconductors |
| US6645677B1 (en) * | 2000-09-18 | 2003-11-11 | Micronic Laser Systems Ab | Dual layer reticle blank and manufacturing process |
| US6605394B2 (en) * | 2001-05-03 | 2003-08-12 | Applied Materials, Inc. | Organic bottom antireflective coating for high performance mask making using optical imaging |
-
2002
- 2002-04-04 SE SE0201019A patent/SE0201019D0/en unknown
-
2003
- 2003-04-01 US US10/510,059 patent/US20050221199A1/en not_active Abandoned
- 2003-04-01 WO PCT/SE2003/000519 patent/WO2003085362A1/en active Application Filing
- 2003-04-01 CN CNA038075148A patent/CN1646884A/en active Pending
- 2003-04-01 JP JP2003582503A patent/JP2005521915A/en active Pending
- 2003-04-01 AU AU2003223150A patent/AU2003223150A1/en not_active Abandoned
- 2003-04-01 EP EP03719277A patent/EP1490657A1/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101713914B (en) * | 2008-10-01 | 2013-06-12 | 台湾积体电路制造股份有限公司 | Photomask and method of fabricating a photomask |
| CN101382742B (en) * | 2008-10-15 | 2011-10-05 | 清溢精密光电（深圳）有限公司 | Developing method for mask plate |
| CN105051622A (en) * | 2013-03-19 | 2015-11-11 | 尼瓦洛克斯-法尔股份有限公司 | Resonator with reduced sensitivity to climatic variations |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005521915A (en) | 2005-07-21 |
| AU2003223150A1 (en) | 2003-10-20 |
| SE0201019D0 (en) | 2002-04-04 |
| US20050221199A1 (en) | 2005-10-06 |
| EP1490657A1 (en) | 2004-12-29 |
| WO2003085362A1 (en) | 2003-10-16 |
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