CN101382581A - Semiconductor integrated circuit device, method for testing the semiconductor integrated circuit device, semiconductor wafer and burn-in test apparatus - Google Patents
Semiconductor integrated circuit device, method for testing the semiconductor integrated circuit device, semiconductor wafer and burn-in test apparatus Download PDFInfo
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Abstract
A wafer test is performed to a wafer, and then a protective film is applied to part of a chip surface of each good chip other than terminals. For defective chips, a protective film is applied to an entire chip surface as well as terminals and, while keeping that state, a burn-in test is performed, thereby cutting off power supply and signal application to defective chips before burn-in test. Moreover, when a chip includes a self-test circuit to judge whether the chip is good or not and the chip is judged to be defective, the function of stopping an internal operation of the chip may be provided or a judgment signal may be transmitted to a burn-in test apparatus, thereby stopping power supply and signal application from the burn-in test apparatus. Thus, power supply and signal application to a chip judged to be defective after burn-in can be cut off.
Description
The application is to be that June 1, application number in 2005 are that 200580032611.3 (international application no is PCT/JP2005/010072), denomination of invention are called the dividing an application of application for a patent for invention of " semiconductor device and detection method thereof, semiconductor wafer and burn-in inspection apparatus " applying date.
Technical field
The present invention relates to and to wear out simultaneously or aging detection method that detects and the semiconductor device that is used for this method to a plurality of SIC (semiconductor integrated circuit).
Background technology
In recent years, the progress that the miniaturization of electronic equipment of semiconductor device and low price are installed is remarkable, and is meanwhile, also more and more higher to the requirement of the miniaturization of semiconductor device and low price.
And be accompanied by the highly integrated and high performance of SIC (semiconductor integrated circuit), and the detection step of semiconductor device (below, abbreviate chip as) is become complicated, the increase that detects cost becomes a problem.In addition, need remove the initial stage unacceptable product by wearing out, and the increase of aging required time also caused detecting the increase of cost, these all become problem.
Usually, with 1 check-out console (device) to detecting in that a plurality of chip areas of making on the wafer (below, only be labeled as " chip ") unified implementation is aging.The condition that detects as efficiently wearing out can list and not make defective chip sneak into the aging operation that detects.When having sneaked into defective chip, owing to causing flowing through big electric current in defective chip, short-circuit and latch-up phenomenon etc. produces voltage decline, can not implement normal aging detection to other qualified chip on the same check-out console (device).And, damage qualified chip sometimes, when situation is serious even can destroy checkout equipment itself.Like this, cause unnecessary aging detection cost to increase owing to sneaking into defective chip.Therefore, it is very important not making defective chip sneak into aging process.
Can consider that sneaking into the aging defective chip that detects operation has 2 kinds of situations.A kind of is to enter aging process defective chip before, and another kind is the defective chip that produces in the aging process.
At first, the defective chip before the aging process screens by detecting usually.Especially under the situation of wafer-level burn, the whole chips that on detecting wafer, form judge whether qualified after, remove defective chip.As the method for removing this defective chip, just like disclosed like that at Japanese kokai publication hei 7-169806 (patent documentation 1), the resin that is used as insulator covers the electrode part of the power supply and the signal wire terminal of defective chip, and cuts off the method that the power supply of defective chip is supplied with.
Figure 11 is the process flow diagram of the detection method of expression conventional semiconductor integrated circuit.As shown in Figure 11, after the semiconductor diffusing procedure finishes, detect defective chip before, under wafer state, detect the whole chips that are formed on the wafer in order to screen aging process.As detecting content, can carry out short circuit and simple motion test between power supply and the GND.Perhaps, in addition, when chip internal possesses self-checking circuit and use this circuit to wear out, carry out the test of its self-checking circuit etc., and use functional test of DC, AC etc.For the chip that is judged as unacceptable product by detection, can on chip, mark and distinguish certified products and unacceptable product.Then, remove defective chip according to mark.The method of removing is the electrode part that covers the power supply and the signal wire terminal of defective chip with the insulator resin, cuts off the power supply of defective chip is supplied with.Afterwards, the detection of wearing out.
The method of the influence of eliminating the defective chip that produces in aging process is described below simply.Have in the detection before aging the detection to be certified products but in aging the detection, to become the situation of unacceptable product, in this case, with above-mentioned shown in aging detection before defective chip equally can bring adverse influence to qualified chip.For addressing this problem, following method is arranged: as disclosed among the Japanese kokai publication hei 8-170977 (patent documentation 2), current limit circuit is set at each chip internal, when producing defective chip and flow through electric current above scheduled volume, the restriction current supply.Utilize the detection of correctly wearing out of this method, and can avoid checkout equipment to break down.
Patent documentation 1: Japanese kokai publication hei 7-169806
Patent documentation 2: Japanese kokai publication hei 8-170977
Summary of the invention
But, there is following defective in the existing method of record in the patent documentation 1, promptly must cover the electrode part of the power supply and the signal wire terminal of defective chip with the insulator resin molding reliably, if under the incomplete situation of resinous coat, wear out, then can in defective chip, flow through big electric current, thereby can cause adverse influence qualified chip.
In addition, in patent documentation 2, there is following defective in the existing method of record, promptly limited flowing through current supply above the defective chip of the electric current of scheduled volume owing to possess current limit circuit at each chip internal, but can not stop the action of defective chip self, thereby cause the electric power that provides unnecessary.
In addition, in existing aging detection, the defective chip that produces during record detects is through how long having produced and produced how many individual such mechanisms after detecting beginning.Therefore, there is following defective, promptly can not correctly detects the convergence of initial stage generation unacceptable product in the operation, thereby set spended time on the suitable digestion time being held in to wear out.
In addition, when detecting when wearing out, be subjected to the restriction of the physical condition of probe card under wafer state, spendable number of terminals is limited.When the chip manufacturing quantity of every wafer increases owing to the heavy caliberization of the miniaturization of semiconductor diffusing procedure, wafer, the number of terminals (number of contacts) that can be used in the probe of each chip block tails off, exist the electric power undersupply, apply the signal undersupply such bring the defective of obstacle to detection.
In addition, the aging enforcement time of detecting was unit with several hours to several days usually, became to cause detecting the big principal element of cost, also became to cause all detecting the principal element that cost rises.
In order to solve at least one above-mentioned defective, the object of the present invention is to provide the detection method and the SIC (semiconductor integrated circuit) that is applied to this method that to carry out correct aging detection and can reduce unnecessary power consumption when detecting.
As the method that is used to solve above-mentioned problem, change the flow process of conventional semiconductor diffusing procedure flow process and wafer-level burn.In the diffusion of contaminants operation, before to the operation of wafer superinsulation surface protection film, temporarily finish diffusion, the wafer before the superinsulation surface protection film is implemented wafer sort, and the coordinate of extraction qualified chip or defective chip.After wafer sort; on qualified chip, form common diaphragm according to the coordinate that extracts and promptly form the diaphragm of protecting terminal chip surface in addition, on defective chip, form the diaphragm that covers entire chip and promptly form the diaphragm that covers the entire chip surface that comprises terminal with mask with mask.Thus, in aging the detection, the terminal of defective chip is owing to the insulating surface diaphragm becomes not on-state, thereby the power supply supply or the signal that can cut off defective chip apply.
In addition, as the method that is used to solve above-mentioned problem, by for the certified products that carry out chip judge in chip built-in self circuit or setting have therewith that the off-chip circuitry of identical function realizes.The function of this self-checking circuit is that the chip that detects judging is under the situation of defective chip, or stops the clock signal of chip internal or fixing input signal.Can reduce unnecessary electric power by the action that stops defective chip supplies with.In addition, by judging that signal is sent to burn-in inspection apparatus, stop from the power supply of burn-in inspection apparatus supply with, signal apply cut off to the power supply of defective chip supply with, signal applies.
In addition, as the method that is used to solve above-mentioned problem, can also have following function, promptly, to be sent to the burn-in inspection apparatus side from the judgement signal that the self-checking circuit of chip is exported, after equipment received FAIL judgement signal, burn-in inspection apparatus write down the quantity of this moment and defective chip.
In addition, as the method that is used to solve above-mentioned problem,, on for example scribe line on the wafer, form wiring for the output signal of certain chip being applied to the input terminal of other chip as input signal.Thus, can supply with input by the output signal of other chip and apply signal, can apply signal to a plurality of chips with less sound end quantum count.
In addition,, in aging the detection, use to be arranged on chip internal or outside self-checking circuit, carry out and the probe in detecting and the detection similar detection of dispatching from the factory as the method that is used to solve above-mentioned problem.Like this, can save existing probe in detecting and the detection of dispatching from the factory, realize detecting the reduction of cost.
Therefore, the first semiconductor device detection method of the present invention comprises: step (a), and whether detect semi-conductor chip under wafer state qualified, and this semi-conductor chip is formed on the wafer, is manufactured with the integrated circuit with electrode pad; Step (b) forms first insulating protective film on the zone except above-mentioned electrode pad of the above-mentioned semi-conductor chip that is judged as certified products by above-mentioned steps (a); Step (c) forms second insulating protective film on the entire upper surface of the above-mentioned semi-conductor chip that is judged as unacceptable product by above-mentioned steps (a); And step (d), use burn-in inspection apparatus to carry out the aging detection of above-mentioned wafer.
According to this method, in aging the detection, the power supply supply and the signal that can cut off reliably defective chip apply, and therefore can prevent to flow through in qualified chip the big electric current more than the regulation.
The second semiconductor device detection method of the present invention, the probe card that is connected on the above-mentioned burn-in inspection apparatus when using burn-in inspection apparatus and being provided with probe terminal and detection carries out the aging detection of integrated circuit, wherein integrated circuit is arranged on the semi-conductor chip that is formed on the wafer and has self-checking circuit, above-mentioned detection method comprises step (a), input terminal on the above-mentioned semi-conductor chip is connected with above-mentioned probe terminal, from above-mentioned burn-in inspection apparatus above-mentioned input terminal is applied input signal, the electrical characteristics of said integrated circuit are carried out wafer-level burn to be detected, wherein, above-mentioned steps (a) comprising: step (a1), above-mentioned self-checking circuit judge whether the said integrated circuit that is arranged on the above-mentioned semi-conductor chip is qualified; And step (a2), when when being judged as unacceptable product, stopping above-mentioned aging detection, when being judged as certified products, continue above-mentioned aging detection to above-mentioned semi-conductor chip to above-mentioned semi-conductor chip by above-mentioned steps (a1).
According to this method, can stop aging detection to defective chip, therefore can reduce the unnecessary electric power of defective chip is supplied with.In addition, can prevent from aging the detection, in defective chip, to flow through big electric current, therefore can detect more accurately, and can prevent that burn-in inspection apparatus from breaking down.
The 3rd semiconductor device detection method of the present invention, the probe card that is connected on the above-mentioned burn-in inspection apparatus when using burn-in inspection apparatus and being provided with probe terminal and detection carries out the aging detection of integrated circuit, this integrated circuit is arranged on the semi-conductor chip that is formed on the wafer, have self-checking circuit and FAIL counting number circuit, above-mentioned detection method comprises step (a), input terminal on the above-mentioned semi-conductor chip is connected with above-mentioned probe terminal, from above-mentioned burn-in inspection apparatus above-mentioned input terminal is applied input signal, the electrical characteristics of said integrated circuit are carried out wafer-level burn to be detected, wherein, above-mentioned steps (a) comprising: step (a1), above-mentioned self-checking circuit judge whether the said integrated circuit that is arranged on the above-mentioned semi-conductor chip is qualified; Step (a2), above-mentioned FAIL counting number circuit is that underproof number of times is counted to judged above-mentioned semi-conductor chip by above-mentioned steps (a1), when count value when predetermined value is following, judge that above-mentioned semi-conductor chip is certified products, when count value surpasses predetermined value, judge that above-mentioned semi-conductor chip is a unacceptable product; And step (a3), stop being judged as the above-mentioned aging detection of the above-mentioned semi-conductor chip of unacceptable product by above-mentioned steps (a2).
According to this method, when being superimposed upon in the input signal etc., can preventing and to be judged as unacceptable product for the chip of certified products originally at noise.
The 4th semiconductor device detection method of the present invention, the probe card that is connected on the above-mentioned burn-in inspection apparatus when using burn-in inspection apparatus and being provided with probe terminal and detection carries out the aging detection of integrated circuit, this integrated circuit is arranged on the semi-conductor chip that is formed on the wafer, have first self-checking circuit and second self-checking circuit and decision circuitry, above-mentioned detection method comprises step (a), input terminal on the above-mentioned semi-conductor chip is connected with above-mentioned probe terminal, from above-mentioned burn-in inspection apparatus above-mentioned input terminal is applied input signal, the electrical characteristics of said integrated circuit are carried out wafer-level burn to be detected, wherein, above-mentioned steps (a) comprising: step (a1), above-mentioned first self-checking circuit judge whether the said integrated circuit that is arranged on the above-mentioned semi-conductor chip is qualified; Step (a2), when being judged as above-mentioned semi-conductor chip by above-mentioned steps (a1) when defective, above-mentioned second self-checking circuit judges whether above-mentioned semi-conductor chip is qualified; Step (a3), when when above-mentioned steps (a1) and (a2) all being judged as unacceptable product, above-mentioned decision circuitry judges that above-mentioned semi-conductor chip is a unacceptable product; And step (a4), stop being judged as the above-mentioned aging detection of the above-mentioned semi-conductor chip of unacceptable product by above-mentioned steps (a3).
According to this method, can prevent because bursts such as noise are former thereby will be judged as defective chip for the chip of certified products originally.
The 5th semiconductor device detection method of the present invention, use burn-in inspection apparatus, probe card and off-chip circuitry, be arranged on the aging detection of the integrated circuit on the above-mentioned semi-conductor chip, wherein, above-mentioned probe card is provided with the probe terminal, be connected during detection on the above-mentioned burn-in inspection apparatus, the said chip external circuit is arranged on each semi-conductor chip that is formed on the wafer and is configured on the scribe line of above-mentioned wafer, above-mentioned detection method comprises step (a), input terminal on the above-mentioned semi-conductor chip is connected with above-mentioned probe terminal, from above-mentioned burn-in inspection apparatus above-mentioned input terminal is applied input signal, the electrical characteristics of said integrated circuit are carried out wafer-level burn to be detected, wherein, above-mentioned steps (a) comprising: step (a1), the said chip external circuit receives the control signal from above-mentioned semi-conductor chip, judges whether the said integrated circuit on the above-mentioned semi-conductor chip is qualified; Step (a2), said chip external circuit stop the above-mentioned aging detection to be judged as underproof above-mentioned semi-conductor chip by above-mentioned steps (a1).
Like this,, also can stop the electric power of defective chip is supplied with, reduce unnecessary electric power and supply with even will make the aging outside that the circuit (off-chip circuitry) that stops to be arranged on semi-conductor chip of detecting according to control signal from semi-conductor chip output.In addition, can prevent to flow through big electric current in defective chip, inhibition supplies to the decline of the voltage of qualified chip, therefore can carry out correct detection.
Semiconductor device of the present invention, has the input terminal that is used to receive from the input signal of outside, be arranged on the semi-conductor chip, it possesses following function, that is, and and when being used to detect the aging detection of above-mentioned semiconductor device, according to input to the above-mentioned input signal of above-mentioned input terminal, carry out self check to the semi-conductor chip that is provided with itself is whether qualified, when judging that above-mentioned semi-conductor chip is defective, above-mentioned aging detection is stopped.
Utilize such structure, can prevent from when aging the detection, in defective chip, to flow through big electric current, implement correct detection.
First semiconductor wafer of the present invention has the input terminal and the lead-out terminal that is used for output self-detection result when wearing out detection that is used to receive from the input signal of outside, be provided with a plurality of semi-conductor chips that are formed with integrated circuit respectively, in above-mentioned a plurality of semi-conductor chip each has following function, promptly, in carrying out above-mentioned aging testing process, when itself being unacceptable product, stop above-mentioned aging detection by above-mentioned self check judgement.
Utilize this structure, when carrying out wafer-level burn, defective chip is not detected, therefore can prevent from defective chip, to flow through big electric current.
Burn-in inspection apparatus of the present invention, be used for output detection signal and receive PASS signal or the FAIL signal that responds above-mentioned detection signal, a plurality of semi-conductor chips that detection forms on semiconductor wafer, this equipment have to be recorded in and receive the moment of above-mentioned FAIL signal and the observation device of number of times when detecting.
Thus, can correctly hold the aging convergence that detects the early period of origination fault in the operation, therefore can set only digestion time, eliminate the waste of digestion time.
According to the present invention, can from detected object, get rid of the defective chip that in aging the detection, becomes problem reliably, therefore can alleviate the adverse influence that defective chip belt is given qualified chip.In addition, stop, or stop the power supply of defective chip is supplied with, can reduce unnecessary electric power and supply with by the action that makes the defective chip that in aging the detection, produces.
In addition, by being recorded in the FAIL moment and the number of the defective chip that produces in aging the detection, can hold the aging convergence that detects the early period of origination fault in the operation exactly, therefore can eliminate the waste of digestion time by setting only digestion time, the detection of can wearing out effectively.In addition, by shared as the signal wire of the input signal of different chips of the shared of the input terminal on the wafer and the output signal that applies chip, can apply signal with less sound end quantum count.In addition,, in aging the detection, detect concurrently, make effectively to utilize to be beneficial to aging detection time, the utmost point to reduce and all detect cost owing to possess the self-checking circuit of the detection of the examination criteria that can dispatch from the factory.
Description of drawings
Fig. 1 is expression first embodiment of the present invention SIC (semiconductor integrated circuit) manufacturing process that relates to and the process flow diagram that detects operation.
Fig. 2 is the circuit block diagram of the semiconductor device that relates to of expression second embodiment of the present invention.
Fig. 3 is the circuit block diagram of first variation of the SIC (semiconductor integrated circuit) that relates to of expression second embodiment.
Fig. 4 is the circuit block diagram of second variation of the SIC (semiconductor integrated circuit) that relates to of expression second embodiment.
The (a) and (b) of Fig. 5 are wear out figure of the semiconductor device that the 3rd embodiment of the present invention in when detection relates to of expression.
Fig. 6 is the figure of the semiconductor device that relates to of expression the 4th embodiment of the present invention.
Fig. 7 is the figure of the semiconductor device that relates to of expression the 5th embodiment of the present invention.
Fig. 8 is the figure of the semiconductor device that relates to of expression the 6th embodiment of the present invention.
Fig. 9 is the figure of the semiconductor device that relates to of expression the 7th embodiment of the present invention.
Figure 10 is the figure of the semiconductor device that relates to of expression the 8th embodiment of the present invention.
Figure 11 is the process flow diagram of the detection method of expression conventional semiconductor integrated circuit.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention.
(first embodiment)
Fig. 1 is expression first embodiment of the invention SIC (semiconductor integrated circuit) manufacturing process that relates to and the process flow diagram that detects operation.Operation from the diffusion of semi-conductor chip, cloth line procedures to wafer-level burn shown in Fig. 1.
The manufacturing of present embodiment and detection method are at first implemented the manufacturing process 11 of semi-conductor chips such as diffusing procedure and cloth line procedures.Then, carry out probe in detecting 12 to the semi-conductor chip of making by above-mentioned operation.Then, the result who adds up to (testing result adds up to 13) probe in detecting 12.According to this aggregate result; to being judged as the semi-conductor chip of certified products; make it to enter the operation (diaphragm to certified products forms operation 14) that forms first diaphragm; and, then make it to enter the operation (diaphragm to unacceptable product forms operation 15) that forms second diaphragm for the semi-conductor chip that is judged as unacceptable product.Then, carry out wafer-level burn 16.
Above operation is described in more detail below.
After semi-conductor chip manufacturing process 11 finishes, implement probe in detecting 12.Can the detection of this moment can be to judge implement wafer-level burn, also can carry out the project that is determined by intra-company's standard.
Then, implement testing result and add up to 13, storage certified products and the coordinate of unacceptable product on wafer map in the device of the outside of probe detection device etc.
Afterwards, prepare to form first mask that uses in the operation 14 and second mask that in diaphragm formation operation 15, uses at unacceptable product at diaphragm at certified products.First mask is the mask that adds up to 12 chips that are judged as certified products to use according to testing result, in the perforate of electrode pad part.Second mask is the mask that adds up to 12 chips that are judged as unacceptable product to use according to testing result, in not perforate of pad portion.Just, first mask is the mask that can apply power supply and input waveform when wafer-level burn, and second mask is can not apply power supply to make chip be in the mask of state of insulation with the input waveform when wafer-level burn.
Then; in the diaphragm exposure device; add up to 13 canned datas according to testing result; in chip figure, be positioned at first mask that is formed for forming first diaphragm on the chip at certified products coordinate place, in chip figure, be positioned at second mask that is formed for forming second diaphragm on the chip at unacceptable product coordinate place.Just, on 1 wafer, use different masks, make it possible to certified products be implemented wafer-level burn, unacceptable product is not implemented wafer-level burn forcibly in this stage in the position of certified products and the position of unacceptable product.According to Exposure mode, do not need to prepare 2 kinds of masks sometimes yet, get final product with mask with 1 certified products.That is, can form diaphragm on the whole surface of chip without mask ground sometimes.Thus, can make the whole not conducting of surface of defective chip.
As previously discussed; prepare 2 kinds of diaphragm masks; use diaphragm mask separately to carry out the semiconductor diffusing procedure respectively at qualified chip and defective chip; thus, the power supply terminal of defective chip, GND terminal and input and output terminal are owing to insulating surface diaphragm (second mask) is in not on-state.As a result, detect in the operation aging, the power supply supply and the signal that can cut off reliably defective chip apply, so can prevent to flow through the big electric current more than the regulation in qualified chip.
In existing method; have coating to handle failure or resin is peeled off after coating may, but, utilize common semiconductor diffusing procedure formation diaphragm according to the method for present embodiment; therefore with respect to existing method, failed probability was extremely low during mask formed.
In addition, use certified products to form the operation of diaphragm,, also do not need to append operation and device so carry out flow process shown in Figure 1 because be the processing that also can carry out with the conventional semiconductor diffusing procedure with mask.Therefore,, can not increase and manufacture this locality and prevent fault of the qualified chip in detection etc., can improve yield rate according to the method for present embodiment.
(second embodiment)
Fig. 2 is the circuit block diagram of the semiconductor device that relates to of expression second embodiment of the present invention.Fig. 2 illustrates the signal flow when using burn-in inspection apparatus to carry out wafer-level burn.
As shown in Figure 2, the semiconductor device of present embodiment (semi-conductor chip 31) has: input terminal 36 receives from the input signal 3a of burn-in inspection apparatus 32 outputs; Input signal control circuit 35, via input terminal 36 receiving inputted signal 3a, input-output data signal 3c under predetermined case; First self-checking circuit 33, the input of response input signal 3a and starting judges that semi-conductor chip 31 is certified products or unacceptable product; And the clock forming circuit 34 that generates clock signal.Here, semi-conductor chip 31 is illustrated in the SIC (semiconductor integrated circuit) on a large amount of chip areas that form on the wafer, also can be the semiconductor device that has encapsulated.
When detecting, the input signal 3a of burn-in inspection apparatus 32 outputs is input to the input terminal 36 of semi-conductor chip 31 when wearing out.Input signal 3a can be a clock signal, also can be data-signal.By input input signal 3a, semi-conductor chip 31 begins action, and first self-checking circuit 33 also begins action.Then, first self-checking circuit 33 judges that semi-conductor chip 31 is certified products or unacceptable product, and judged result is exported as judgement signal 3b.Judge that signal 3b is imported into clock forming circuit 34 and input signal control circuit 35.When judging that signal 3b represents that certified products are judged, proceed follow-up aging detection.And when judging that signal 3b represents defective judgement (FAIL signal), carry out circuit control and make clock forming circuit 34 stop to generate clock.Thus, be judged as underproof semi-conductor chip 31, after this do not supply with clock to chip internal by first self-checking circuit 33.When judging that signal 3b is defective judgements, carry out circuit and control and make fixedly input data signal 3c of input signal control circuit 35.Thus, be judged as underproof semi-conductor chip 31 by first self-checking circuit 33, fixing input data signal 3c after this is not to the chip internal input data signal.
As previously discussed, at built-in first self-checking circuit 33 of chip internal, judge that according to it signal stops the input signal of chip internal and the supply of clock signal, thus, can stop the action of defective chip in aging the detection, reduce the unnecessary electric power of defective chip is supplied with.In addition, because can prevent from aging the detection, in defective chip, to flow through big electric current, thus can detect more accurately, and can prevent that burn-in inspection apparatus from breaking down.
The variation of the semiconductor device of present embodiment then, is described.
Fig. 3 is the circuit block diagram of first variation of the semiconductor device that relates to of expression present embodiment.As by known to Fig. 3, the semiconductor device that first variation relates to is the device that is provided with FAIL counting number circuit 41 in semiconductor device shown in Figure 2.
In the semiconductor device that this variation relates to, FAIL counting number circuit 41 receives from the judgement signal 4a of first self-checking circuit, 33 outputs.41 pairs in FAIL counting number circuit receives the number of times of judging signal 4a and counts, when count value is certain number of times when following, judge that semi-conductor chip 31 be certified products, when the time above certain number of times, judge that semi-conductor chip 31 is a unacceptable product, this judged result is exported as judgement signal 3b.Identical with the semiconductor device of second embodiment, judge that signal 3b is imported into clock forming circuit 34 and input signal control circuit 35, when judging that signal 3b represents that certified products are judged (PASS signal), proceeds follow-up aging detection.When judging that signal 3b represents defective judgement (FAIL signal), carry out circuit control and make clock forming circuit 34 stop to generate clock.Thus, be judged as in the underproof semi-conductor chip 31, after this do not supplying with clock to chip internal by first self-checking circuit 33.When judging that signal 3b is defective judgements, carry out circuit and control and make fixedly input data signal 3c of input signal control circuit 35.Thus, be judged as in the underproof semi-conductor chip 31 by first self-checking circuit 33, fixing input data signal 33 after this is not to the chip internal input data signal.
Like this, by FAIL counting number circuit 41 shown in Figure 3 is set, for example, when moment noise be superimposed upon that the input signal 3a that is supplied with by burn-in inspection apparatus 32 goes up and when causing the misoperation of semi-conductor chip 31, can prevent and will be judged as unacceptable product for the semi-conductor chip of certified products originally.That is, if use the semiconductor device of this variation, the detection of then can wearing out more accurately.
Next, Fig. 4 is the circuit block diagram of the semiconductor device that relates to of second variation of expression present embodiment.The semiconductor device that this variation relates to is the device that is provided with second self-checking circuit 51 in semiconductor device shown in Figure 2.
Second self-checking circuit 51 is identical with first self-checking circuit 33, is the circuit with function of judging certified products or unacceptable product, but does not move under the situation that is certified products usually.
In the semiconductor device of this variation, second self-checking circuit 51 and decision circuitry 52 receive from the judgement signal 5a of first self-checking circuit, 33 outputs.Represent that certified products judge if judge signal 5a, then with second semiconductor device similarly, decision circuitry 52 will judge that signal 3b exports clock forming circuit 34 and input signal control circuit 35 respectively to, proceed aging detection.In addition, in this case, second self-checking circuit 51 is failure to actuate, and does not export judged result.And when judging that signal 5a represents defective judgement, second self-checking circuit 51 begins action, and the judgement signal 5b of output expression certified products or unacceptable product is to decision circuitry 52.When judging that signal 5a represents defective judgement, represent the certified products judgement if judge signal 5b, then decision circuitry 52 judges that semi-conductor chips 31 are certified products, signal 3b is judged in output.On the contrary, all represent defective judgement if judge signal 5a, 5b, then decision circuitry 52 judges that semi-conductor chip 31 is a unacceptable product, and signal 3b is judged in output.With the semiconductor device of second embodiment similarly, judge that signal 3b is input to clock forming circuit 34 and input signal control circuit 35, when judging that signal 3b represents that certified products are judged, proceeds follow-up aging detection.On the other hand, when judging that signal 3b represents defective judgement (FAIL signal), control and make clock forming circuit stop to generate clock.Thus, be judged as underproof semi-conductor chip 31, after this do not supply with clock to chip internal by decision circuitry 52.When judging that signal 3b represents defective judgements, carry out circuit and control and make fixedly input data signal 3c of input signal control circuit 35.Thus, be judged as underproof semi-conductor chip 31 by decision circuitry 52, fixing input data signal 3c after this is not to the chip internal input data signal.
Like this, a plurality of by being provided with from decision circuitry, can with situation shown in Figure 3 similarly, when semi-conductor chip 31 produces misoperations,, prevent and will be judged as unacceptable product for the chip of certified products originally by making other self-checking circuit action.But, under the situation that makes same self-checking circuit action, can prevent that also the erroneous judgement that is caused by misoperation is disconnected.The SIC (semiconductor integrated circuit) that present embodiment relates to and the detection method of variation thereof have been used, even under the situation of the outside of the first-class semi-conductor chip of scribe line that self-checking circuit and decision circuitry and FAIL counting number circuit etc. is arranged on chip, can carry out too.
(the 3rd embodiment)
The (a) and (b) of Fig. 5 are wear out figure of the semiconductor device that the 3rd embodiment of the present invention in when detection relates to of expression.(b) of Fig. 5 is the enlarged drawing of Fig. 5 (a).
When wearing out detection, make under the input terminal 36 (with reference to Fig. 2) that is formed at a plurality of semi-conductor chips 31 on the semiconductor wafer 61 and the state that each probe terminal 62 of probe card is connected, via power supply supply lines 63, apply power supply to probe card from burn-in inspection apparatus 32.On the power supply supply lines 63 that is arranged on the probe card, be provided with power control 65, control whether to semi-conductor chip 31 supply powers.Semi-conductor chip 31 for example is the semiconductor device that second embodiment relates to, and as judging signal 6a, exports the judgement signal 3b of semi-conductor chip 31 to power control 65 from lead-out terminal 64.When judging that signal 6a represents that certified products are judged, continue by 65 pairs of semi-conductor chip 31 supply powers of power control, proceed aging the detection.When judging that signal 6a represents defective judgement, stop by 65 pairs of semi-conductor chip 31 supply powers of power control, the aging detection of semi-conductor chip 31 finishes.
In addition, power control 65 can be measured the current value that flows through in chip, has to stop the function that power supply is supplied with when flowing through certain electric current more than the current value.Even judging that signal 6a represents under the situation of certified products judgement, when the current value ratio setting that flows through in the semi-conductor chip 31 is big, also stop the power supply of semi-conductor chip 31 is supplied with.
Like this, the power supply of qualified chip and defective chip is supplied with, can be breaking at the big electric current that flows through in the defective chip by using power control 65 controls.In addition,, will flow through the above chip of certain current value, stop aging the detection, and can will not satisfy the chip of power consumption of semi-conductor chip 31 as unacceptable product as unacceptable product by measuring the current value in semi-conductor chip 31, flow through.Utilize above method, can alleviate adverse influence, can carry out stable aging detection qualified chip.
The detection method of present embodiment is not limited to the SIC (semiconductor integrated circuit) of second embodiment, also applicable to its variation.
(the 4th embodiment)
Fig. 6 is the figure of the semiconductor device that relates to of expression the 4th embodiment of the present invention.
As shown in Figure 6, the semiconductor device of present embodiment has the off-chip circuitry 72 that forms on a plurality of semi-conductor chips 31 that form on the semiconductor wafer 61 and the scribe line 71 at semiconductor wafer 61.When aging the detection, each chip is connected with burn-in inspection apparatus via probe card, from burn-in inspection apparatus supply power and input signal.
Off-chip circuitry 72 is connected on the lead-out terminal 73 and input terminal 74 of semi-conductor chip 31, via these terminals, and transmitting-receiving control signal 7a and judgement signal 7b.Whether qualified off-chip circuitry 72 have and detect semi-conductor chip 31 function, receives from the control signal 7a of semi-conductor chip 31 outputs, begins to detect, and the judged result qualified with whether is sent to semi-conductor chip 31 as judging signal 7b.Semi-conductor chip 31 carries out such processing illustrated in second embodiment according to judged result.That is, when judging that signal 7b represents that certified products are judged, proceed follow-up aging detection.When judging that signal 7b represents defective judgement (FAIL signal), control and make clock forming circuit stop to generate clock.
Thus, be judged as underproof semi-conductor chip 31, after this do not supply with clock at chip internal by off-chip circuitry 72.In addition, when judging that signal 7b represents defective judgement, control and make fixedly input data signal of input signal control circuit 35.Thus, be judged as underproof semi-conductor chip 31, after this fixedly input data signal, not input data signal in chip by off-chip circuitry 72.
As previously discussed, has the off-chip circuitry of measuring ability by going up in the room of chip exterior (scribe line) to form, judge that at it signal indication stops the input signal of chip internal and the supply of clock signal when defective, thus, can stop the action of defective chip in aging the detection.By stopping electric power supply to defective chip, can cut down unnecessary electric power and supply with, reduce the aging cost that detects.In addition, when aging the detection, can suppress to be supplied to the decline of the voltage of chip, carry out correct detection.
The semiconductor device of present embodiment is not the device that is defined in the aging detection on the wafer, goes for the unified situation that wears out and detect under the encapsulation form yet.
(the 5th embodiment)
Fig. 7 is the figure of the semiconductor device that relates to of expression the 5th embodiment of the present invention.
When the semiconductor device to present embodiment wears out detection, supply with the input terminal 36 of input signal 3a to semi-conductor chip 31 from burn-in inspection apparatus 32.Here, burn-in inspection apparatus 32, and receives from the judgement signal 6a of lead-out terminal 64 outputs of semi-conductor chip 31, the detection of wearing out to semi-conductor chip 31 output detection signals (input signal 3a) via the probe terminal.
Much more very the complete underproof chip of output FAIL signal and PASS signal and FAIL signal all have the such unstable chip of output, as defective chip, do not send into subsequent processing.
Like this, FAIL by the defective chip that produces in having that record is aging and detecting constantly and the observation device 81 of number of times, can correctly hold the aging convergence that detects the early period of origination fault in the operation, therefore by setting only digestion time, can eliminate the waste of digestion time, the detection of wearing out effectively.
(the 6th embodiment)
Fig. 8 is the figure of the semiconductor device that relates to of expression the 6th embodiment of the present invention.
The structure of the semiconductor device of present embodiment is that in the semiconductor device that the 5th embodiment shown in Figure 7 relates to, observation device 81 is exported stop signal 9a, burn-in inspection apparatus 32 reception stop signal 9a.That is, observation device 81 not only has the recorder shown in the embodiment of Fig. 5 to the moment and the number of times thereof of FAIL signal and be the function which chip is exported, and also has to make burn-in inspection apparatus 32 stop power supply applying the command functions that applies with signal.The structure of observation device 81 can be to send at once to stop the order that power supply applies the purport that applies with signal behind the FAIL signal that receives from chip, also can be that output is ceased and desisted order when the number of times of FAIL signal has reached predetermined value.
Present embodiment also can be not by observation device 81 as sending the method for stop signal to aging equipment 32, directly the structure from semi-conductor chip 31 output stop signal 9a to burn-in inspection apparatus.
Thus, can cut down the unnecessary power supply of defective chip is supplied with, reduce the aging cost that detects.
(the 7th embodiment)
Fig. 9 is the figure of the semiconductor device that relates to of expression the 7th embodiment of the present invention.
Be provided with the semiconductor wafer 61 of the semiconductor device of present embodiment, have a plurality of semi-conductor chips of each having input terminal 101 and be formed on place such as scribe line 71, be connected aging inspection on the input terminal 101 with terminal 102.
When aging the detection, be electrically connected input terminal 101 and aging the detection with terminal 102 by signal wire 10a.1 aging detection can be connected on a plurality of input terminals 101 with terminal 102.Making aging the detection, apply input signal 3a from 32 pairs of probe cards of burn-in inspection apparatus with under terminal 102 and the state that each probe terminal 62 (with reference to (a) of Fig. 5) of probe card is connected.Signal wire 10a must also can be arranged on wafer inside on the surface of semiconductor wafer 61.In addition, in the detection on the wafer before aging the detection,,, can cut off the power supply and the signal of defective chip are supplied with by using laser cutting signal wire 10a in advance for being judged as underproof chip.Because can cut off aging the detection, so to the not special influence of the input terminal of semi-conductor chip 31 at the cutting action of wafer with terminal 102 and signal wire 10a.
Like this, use terminal by aging the inspection is set on room idle on the chips such as scribe line, multiplexing input signal can be realized the signal of semi-conductor chip is applied with less sound end quantum count.In addition, use terminal, can prevent the connection between the terminal when detecting and the terminal that causes damages by aging the detection is set dividually.
(the 8th embodiment)
Figure 10 is the figure of the semiconductor device that relates to of expression the 8th embodiment of the present invention.
As shown in figure 10, the semiconductor wafer of present embodiment is provided with a plurality of semi-conductor chips 31 that have input terminal 111 and lead-out terminal 112 separately.Semi-conductor chip 31 can be the semiconductor device of the shaped like chips that forms on wafer, also can be the semiconductor device that has encapsulated.
In aging the detection, when semi-conductor chip 31 when input terminal 111 receives input signal 11a by burn-in inspection apparatus 32 outputs, from lead-out terminal 112 output signal output 11b.And the lead-out terminal 112 of semi-conductor chip 31 is connected on the input terminal 111 of adjacent semi-conductor chip 31, and lead-out terminal 112 is connected on the input terminal 111 of adjacent thereafter semi-conductor chip 31.For example, when semi-conductor chip 31 carried out the SCAN action, input terminal 111 became the SCAN input terminal, and lead-out terminal 112 is the SCAN lead-out terminal.Like this, can side by side detect a plurality of chips with 1 signal wire.The input terminal 111 and the lead-out terminal 112 that transmit each semi-conductor chip 31 of input signal 11a, output signal 11b need only electrical connection respectively.
Like this, by the output signal of the chip input signal as other chip is applied, can supply with signals to a plurality of chips by enough 1 signal wires, and can side by side check a plurality of chips.Therefore, can realize a plurality of chips are applied signal with less sound end quantum count.Therefore, from now on, even since the heavy caliberization of the miniaturization of semiconductor diffusing procedure and wafer make under the situation that the production quantity of semi-conductor chip increases, as long as use the SIC (semiconductor integrated circuit) of present embodiment, the detection of can correctly wearing out.
Industrial utilizability
Semiconductor device of the present invention and detection method thereof are applicable to being formed on together The wafer-level burn that a large amount of semiconductor integrated circuit unifications on one wafer are worn out and detected.
Claims (3)
1. PASS signal or FAIL signal that burn-in inspection apparatus, this equipment are used for output detection signal and receive the above-mentioned detection signal of response detect a plurality of semi-conductor chips that form on semiconductor wafer, it is characterized in that:
Have observation device, this device recording receives the moment and the number of times of above-mentioned FAIL signal when detecting.
2. burn-in inspection apparatus according to claim 1 is characterized in that:
Above-mentioned observation device makes the power supply of the semi-conductor chip of having exported above-mentioned FAIL signal in above-mentioned a plurality of semi-conductor chips is supplied with or the supply of above-mentioned detection signal stops when receiving above-mentioned FAIL signal.
3. burn-in inspection apparatus according to claim 1 is characterized in that:
When above-mentioned observation device reaches predetermined value at the number of times that receives above-mentioned FAIL signal, make the power supply of the semi-conductor chip of having exported above-mentioned FAIL signal is supplied with or the supply of above-mentioned detection signal stops.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP255411/2004 | 2004-09-02 | ||
| JP2004255411 | 2004-09-02 | ||
| JP057831/2005 | 2005-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200580032611 Division CN101027766A (en) | 2004-09-02 | 2005-06-01 | Semiconductor integrated circuit device and method for inspecting the same, semiconductor wafer and burn-in inspection apparatus |
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| CN101382581A true CN101382581A (en) | 2009-03-11 |
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| CN 200580032611 Pending CN101027766A (en) | 2004-09-02 | 2005-06-01 | Semiconductor integrated circuit device and method for inspecting the same, semiconductor wafer and burn-in inspection apparatus |
| CNA2008102131242A Pending CN101382581A (en) | 2004-09-02 | 2005-06-01 | Semiconductor integrated circuit device, method for testing the semiconductor integrated circuit device, semiconductor wafer and burn-in test apparatus |
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| CN 200580032611 Pending CN101027766A (en) | 2004-09-02 | 2005-06-01 | Semiconductor integrated circuit device and method for inspecting the same, semiconductor wafer and burn-in inspection apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116008790A (en) * | 2023-03-23 | 2023-04-25 | 深圳市宇芯数码技术有限公司 | Chip aging test system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150277393A1 (en) * | 2014-04-01 | 2015-10-01 | Qualcomm Incorporated | Integrated circuit dynamic de-aging |
| FR3077678B1 (en) * | 2018-02-07 | 2022-10-21 | St Microelectronics Rousset | METHOD FOR DETECTING DAMAGE TO THE INTEGRITY OF A SEMICONDUCTOR SUBSTRATE OF AN INTEGRATED CIRCUIT FROM ITS REAR FACE, AND CORRESPONDING DEVICE |
| CN112474419A (en) * | 2020-11-18 | 2021-03-12 | 张文魁 | Semiconductor packaging detection device |
| CN113311319B (en) * | 2021-06-01 | 2024-02-13 | 成都海光集成电路设计有限公司 | Integrated circuit chip and configuration method, and test system and test method |
| CN114113987B (en) * | 2022-01-24 | 2022-04-12 | 中大检测(湖南)股份有限公司 | Chip inspection tracking method and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116008790A (en) * | 2023-03-23 | 2023-04-25 | 深圳市宇芯数码技术有限公司 | Chip aging test system and method |
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