CN101376499B - Method for preparing polysilicon - Google Patents
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- CN101376499B CN101376499B CN2007101210596A CN200710121059A CN101376499B CN 101376499 B CN101376499 B CN 101376499B CN 2007101210596 A CN2007101210596 A CN 2007101210596A CN 200710121059 A CN200710121059 A CN 200710121059A CN 101376499 B CN101376499 B CN 101376499B
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Abstract
The invention relates to a method for producing polysilicon comprising the following steps: reacting industrial silicon with chlorine hydride to generate trichlorosilane; reacting the purified trichlorosilane with hydrogen gas to generate the polysilicon; collecting tail gases mainly including the hydrogen gas, chlorine hydride, dichIorosilane, trichlorosilane and silicon tetrachloride; adding pressure to and cooling the tail gases, and carrying out a gas-liquid separation to the hydrogen gas, the chlorine hydride and the dichIorosilane from the liquid trichlorosilane and the silicon tetrachloride; leaching the hydrogen gas, the chlorine hydride and the dichIorosilane by a liquid state silicon tetrachloride, thereby removing the impurities such as chlorine hydride, solid impurities and perchlorosilane or the like; separating the hydrogen gas from the chlorine hydride and the dichlorosilane by a liquid state absorbent; desorbing the chlorine hydride and the dichlorosilane out from the liquid state absorbent through heating; separating the chlorine hydride from the dichlorosilane by controlling the pressure and/or temperature; and separating the trichlorosilane from the silicon tetrachloride by controlling the temperature and/or the pressure. The inventive method can recover and utilize the tail gas, and increases the output and the efficiency.
Description
Technical field
The present invention relates to a kind of method of industrial production polysilicon, more specifically, relate to a kind of method that can dry method reclaims and utilize the production polysilicon of tail gas.
Background technology
Polysilicon is the raw material of preparation silicon single crystal, finally is used to produce unicircuit and electron device, and be one of the highest basic material of information industry consumption maximum, purity requirement, also be the product and the industry of state key encourage growth.
World advanced person's production of polysilicon technology by the company monopolizing of beautiful, day, moral three states always, all there be know-how and technical characterstic separately in each company, through constantly research, exploitation, formed production technique separately, and from national strategy angle separately, strict control techniques transfer also monopolizes global polysilicon market.
China's polysilicon industry is started in the fifties, middle nineteen sixties is realized industrialization, early seventies is pell-mell development once, factory is family surplus in the of 20 nearly, and what all adopt is traditional Siemens process, backward in technique, environmental pollution is serious, supplies consumption is big, production cost height, most losses of enterprise and stop production in succession or change the line of production.
The outstanding characteristics of tradition production of polysilicon technology are " tail gas hydrometallurgic recovery " technology, and promptly the tail gas that produces in the polysilicon production process is used water wash, recover hydrogen after preliminary pressurization separates chlorosilane.Yet in the water wash process, foreign gases such as the oxygen in the water, carbonic acid gas can be polluted hydrogen, so a large amount of hydrogen that reclaims needs to purify once more.In addition, chlorosilane hydrolysis in the lessivation produces sewage, needs further to handle, and causes environmental pollution and supplies consumption big.Simultaneously, the hydrogen of generation also fails to be fully utilized, and has both wasted the energy, has increased cost, has caused environmental pollution again.
Summary of the invention
Purpose of the present invention is intended to overcome at least one shortcoming of the prior art, proposes a kind of method that can reclaim and utilize the production polysilicon of tail gas, and therefore the method according to this invention dry back ending gas also can be called " tail gas dry process recovery " technology.
Utilize method of the present invention, not only can reclaim fully and recycle, and can significantly reduce the generation of pollutent in the production, made full use of material simultaneously, reduced cost tail gas.
For achieving the above object, embodiments of the invention propose a kind of method of producing polysilicon, and may further comprise the steps: with industrial silicon and hydrogenchloride is raw material, and reaction generates trichlorosilane; With described trichlorosilane after purifying and hydrogen reaction, thereby reduction generates polysilicon; Collect and generate the tail gas that trichlorosilane, purify trichlorosilane and generation polysilicon process produce, wherein said tail gas mainly comprises hydrogen, hydrogenchloride and chlorosilane, and described chlorosilane mainly comprises dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride; Pressurization and cool off described tail gas, described hydrogen, hydrogenchloride, dichloro-dihydro silicon remain gaseous state, thereby by gas-liquid separation gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon are separated with silicon tetrachloride with the trichlorosilane of liquid state so that make described trichlorosilane and silicon tetrachloride become liquid; Silicon tetrachloride with liquid state carries out drip washing to gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon, thereby remove hydrogenchloride, solid impurity and high chlorosilane in the tail gas, and the liquid silicon tetrachloride that has absorbed hydrogenchloride in lessivation heated up, make hydrogenchloride desorb from liquid silicon tetrachloride; Make gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon by liquid absorption agent, so that hydrogenchloride and dichloro-dihydro silicon are dissolved in the liquid absorption agent, thereby hydrogen is separated with dichloro-dihydro silicon with hydrogenchloride, thus recover hydrogen; The absorption agent that has dissolved hydrogenchloride and dichloro-dihydro silicon is heated up, hydrogenchloride and dichloro-dihydro silicon are desorbed from stripping liquid; The gasiform hydrogenchloride that desorbs from stripping liquid by control and the pressure of dichloro-dihydro silicon and/or temperature make dichloro-dihydro silicon become liquid state and hydrogenchloride remains gaseous state, thereby separation is also reclaimed hydrogenchloride and dichloro-dihydro silicon respectively, and wherein said absorption agent is a silicon tetrachloride; With the trichlorosilane that passes through the control liquid state and the temperature and/or the pressure of silicon tetrachloride, make trichlorosilane become gaseous state and silicon tetrachloride remains liquid state, thereby by gas-liquid separation trichlorosilane is separated with silicon tetrachloride, reclaim trichlorosilane and silicon tetrachloride thus respectively.
Method according to production polysilicon of the present invention may further include gaseous hydrogen chloride and the chlorosilane that utilizes remnants in adsorbents adsorb and the filtering hydrogen, thereby hydrogen is separated with chlorosilane with the hydrogenchloride of described remnants, and wherein said sorbent material is a gac.
The hydrogenchloride and the chlorosilane that may further include being attracted in the sorbent material according to the method for production polysilicon of the present invention heat; With utilize gaseous hydrogen chloride and chlorosilane after hydrogen will heat and in sorbent material, take out of.
The further embodiment according to the present invention, the hydrogenchloride and the chlorosilane that are attracted in the sorbent material are heated to 80～180 ℃.
Method according to production polysilicon of the present invention may further include silicon tetrachloride and the hydrogen reaction that makes recovery, is used to produce polysilicon so that generate trichlorosilane.
The further embodiment according to the present invention, pressurizeing and cooling off described tail gas is that tail gas is pressurized to 0.3～1.5MPa and is cooled to-20～-70 ℃.
The further embodiment according to the present invention, the gasiform hydrogenchloride that desorbs from stripping liquid and the pressure of dichloro-dihydro silicon are controlled as 0.1～2.0MPa and/or temperature is controlled as 30～-70 ℃.
According to the present invention, owing to adopt the tail gas that produces in the dry process production of polysilicon, therefore, overcome and eliminated the shortcoming of conventional wet recovery technology, tail gas has obtained sufficient recycling simultaneously, especially the tail gas that reclaims is turned back in the production of polysilicon operation, make the production means can be able to sufficient utilization, and significantly reduced the generation and the quantity of pollutent in the production.
According to the present invention, material is in closed cycle is used, greatly reduce the consumption of raw and auxiliary material, fundamentally solved the problem of environmental pollution that production of polysilicon causes, simultaneously, save project investment, improved quality product and output, reduce cost, made the construction and upgrading of production of polysilicon project obtain sufficient initiative.
The additional feature and advantage of the present invention part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Fig. 1 is the industrial production schematic flow sheet according to the polysilicon of first embodiment of the invention;
Fig. 2 is the industrial production schematic flow sheet according to the polysilicon of second embodiment of the invention.
Embodiment
So that explain the present invention, described embodiment is exemplary, and can not be interpreted as limitation of the present invention below by describing specific embodiment with reference to the accompanying drawings.
With reference to figure 1, wherein show the FB(flow block) that to use according to the industrial production polysilicon of the embodiment of the invention.According to the technology of production polysilicon of the present invention, be that to utilize industrial silicon and hydrogenchloride (HCl) be main raw material, generate with trichlorosilane (SiHCl by the control reaction conditions
3) be master's the chlorosilane and the mixture of hydrogen, pass through existing purification techniques then to trichlorosilane (SiHCl
3) purify after, send into reduction furnace, make trichlorosilane (SiHCl
3) and auxiliary material hydrogen (H
2) reaction, reduction generates polysilicon.
In the process of above-mentioned industrial production polysilicon, the tail gas of generation mainly comprises hydrogen (H
2), hydrogenchloride (HCl) and chlorosilane, described chlorosilane mainly comprises dichloro-dihydro silicon (SiH
2Cl
2), trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4).
Reaction main in the production process is:
Si+HCl→SiHCl
3+SiCl
4+H
2
SiHCl
3→Si+SiCl
4+H
2
SiHCl
3+H
2→Si+HCl
Need to prove, owing in primary industry silicon, also have plurality of impurities, for example iron, aluminium, boron, calcium or the like, so, in reaction, also can produce the muriate of calcium, the muriate of iron, the muriate of aluminium and the muriate of boron, and solid and/or gaseous impurities such as other high chlorosilanes, these impurity also can be mixed in the middle of the tail gas, certainly content is less, and the method according to this invention also can be handled these impurity, and this will be described below.
Specifically describe the method for description below with reference to Fig. 1 according to the production polysilicon of the fully recovery and reuse tail gas of first embodiment of the invention.
At first, will generate trichlorosilane as the industrial silicon of raw material and hcl reaction, then, with described trichlorosilane through purifying after and hydrogen reaction, reduction generation polysilicon; Meanwhile, collect and generate the tail gas that trichlorosilane, purify trichlorosilane and generation polysilicon process produce, wherein said tail gas mainly comprises hydrogen, hydrogenchloride and chlorosilane, and described chlorosilane mainly comprises dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride.
The tail gas of collecting is pressurizeed and cools off, and for example, tail gas is pressurized to about 0.3～1.5MPa and is cooled to approximately-20～-70 ℃, because described trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4) and described hydrogen (H
2), hydrogenchloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2) between the boiling point difference, therefore, under above-mentioned processing condition, the trichlorosilane (SiHCl in the tail gas
3) and silicon tetrachloride (SiCl
4) become liquid state, and described hydrogen (H
2), described hydrogenchloride (HCl) and dichloro-dihydro silicon (SiH
2Cl
2) exist with gaseous form, thereby by gas-liquid separation gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon are separated with silicon tetrachloride with the trichlorosilane of liquid state.
Above-mentioned pressure condition 0.3～1.5MPa and temperature condition-20～-70 ℃ only are exemplary, for those having ordinary skill in the art will appreciate that, as long as can gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon be separated with silicon tetrachloride with the trichlorosilane of liquid state by gas-liquid separation, any suitable pressure and temperature processing condition can be used.
Then, utilize liquid silicon tetrachloride (SiCl
4) as absorption agent, make gasiform hydrogenchloride (HCl) and dichloro-dihydro silicon (SiH
2Cl
2) be dissolved in the absorption agent, so that with gasiform hydrogen (H
2) and hydrogenchloride (HCl) and dichloro-dihydro silicon (SiH
2Cl
2) initial gross separation.For persons of ordinary skill in the art may appreciate that in isolated gaseous hydrogen, still have the gaseous hydrogen chloride (HCl) and the silicon tetrachloride (SiCl of small portion of residual
4) be mixed in wherein.Absorption agent is not limited to liquid silicon tetrachloride in addition.
Then, the absorption agent that has dissolved hydrogenchloride and dichloro-dihydro silicon is heated up and/or pressurizes, hydrogenchloride and dichloro-dihydro silicon are desorbed from the silicon tetrachloride of liquid state.For example, the absorption agent that has dissolved hydrogenchloride and dichloro-dihydro silicon is raised to 70～220 ℃ and be pressurized to 0.1～2.0MPa, yet, above-mentioned processing condition only are exemplary, as long as utilize hydrogenchloride different with the boiling point of silicon tetrachloride with dichloro-dihydro silicon, by gas-liquid separation hydrogenchloride is separated with silicon tetrachloride with dichloro-dihydro silicon, any processing condition can be used.
Then, the gasiform hydrogenchloride that desorbs by control and the pressure of dichloro-dihydro silicon and/or temperature make dichloro-dihydro silicon become liquid state and hydrogenchloride remains gaseous state, thereby separate and reclaim hydrogenchloride and dichloro-dihydro silicon respectively.For example, the gasiform hydrogenchloride that desorbs and the pressure of dichloro-dihydro silicon are controlled as 0.1～2.0Mpa, and temperature is controlled as 30～-70 ℃.Yet, as long as utilize hydrogenchloride different, hydrogenchloride is separated with dichloro-dihydro silicon by gas-liquid separation with the boiling point of dichloro-dihydro silicon, can use any suitable temperature and/or pressure process condition.
And then, the trichlorosilane of the liquid state that control is separated and the temperature and/or the pressure of silicon tetrachloride, make trichlorosilane become gaseous state and silicon tetrachloride remains liquid state, thereby trichlorosilane is separated with silicon tetrachloride, reclaim trichlorosilane and silicon tetrachloride thus respectively by gas-liquid separation.
Thus, according to the method for recovery tail gas of the present invention, can effectively utilize dry method and reclaim and utilize producing various compositions in the tail gas that polysilicon produced, thereby improved the organic efficiency of tail gas, and can not produce pollution, improve utilization ratio of raw materials, reduce cost.
The further embodiment according to the present invention utilizes sorbent material that separated hydrogen is adsorbed and filters, so that absorption and filtering hydrogen (H
2) in a small amount of remaining gaseous hydrogen chloride (HCl) that is mixed with and chlorosilane (here, described chlorosilane main component is silicon tetrachloride (SiCl
4)), thereby with hydrogen (H
2) separate.Described sorbent material is a gac, but is not limited to this, can use other any suitable sorbent materials.
The hydrogen of separating can turn back in the polysilicon production process, with trichlorosilane reaction, produces polysilicon, thereby the hydrogen in the tail gas can recycle in polysilicon production process, has reduced production cost, has improved the utilising efficiency of raw material.And, owing to adopt the dry method recovery technology, reduced the generation of pollutent, avoid environmental pollution, and eliminated and handled the needs of pollutent, thereby reduced production cost and energy consumption.
And then ((here, described chlorosilane main component is silicon tetrachloride (SiCl to the hydrogenchloride (HCl) that is adsorbed in the gac and chlorosilane
4)) heat, be heated to temperature and be approximately 80～180 ℃, thereby the locomotor activity of raising gas molecule utilizes for example highly purified hydrogen (H then
2) (here, described chlorosilane main component is silicon tetrachloride (SiCl will to heat back gasiform hydrogenchloride (HCl) and chlorosilane
4)) blow out (taking out of), need to prove that the said temperature condition only is an example, the present invention is not limited to this.
By hydrogen (H
2) gaseous hydrogen chloride (HCl) taken out of and chlorosilane and hydrogen can turn back in the middle of the tail gas in the lump, the circulation of carrying out is once more reclaimed, also can turn back to in the separated hydrogen before the charcoal absorption, the absorption that circulates, thus reduce hydrogenchloride and chlorosilane in the hydrogen gradually.By such process, make in the tail gas hydrogen (H as by product
2) can access and reclaim and recycle, both having can be used as the auxiliary material in the production of polysilicon reduction process, also can be used for hydrogenchloride (HCl) and chlorosilane (silicon tetrachloride (SiCl
4)) in the recycling technology of from acticarbon, taking out of, make in the process of the production of whole polysilicon and vent gas treatment, do not produce new by product, make also that simultaneously original raw materials for production---activated carbon of sorbent is able to utilization sufficient, capable of circulation, and then given prominence to the effect of efficient, energy-saving and environmental protection of the present invention more.
The further embodiment according to the present invention makes the silicon tetrachloride and the hydrogen reaction that separate and reclaim, so that generate trichlorosilane, returns as raw material and is used for production of polysilicon.
Isolated hydrogenchloride also can be used for generating trichlorosilane with the industrial silicon reaction, returns the production that is used for polysilicon as raw material.
Thus, according to embodiments of the invention, the various compositions in the tail gas can both be reclaimed fully, and can circulate is used for the production of polysilicon, and produce pollution, have reduced production cost and energy consumption, have reduced pollution, have improved output.
Below with reference to the method for Fig. 2 specific descriptions according to the production polysilicon of second embodiment of the invention.Fig. 2 shows the FB(flow block) according to second embodiment of the invention, and the key distinction of present embodiment and above-mentioned first embodiment is, also comprises with liquid silicon tetrachloride tail gas is carried out drip washing.
In the method for preparing polysilicon of traditional wet method vent gas treatment, usually all be that water carries out drip washing to tail gas, purpose is that the hydrogenchloride (HCl) in the tail gas is entered in the water by drip washing, the chlorosilane that part does not reclaim is hydrogenchloride and Silicon dioxide, hydrate by the water wash posthydrolysis, this type of sewage needs individual curing, cause supplies consumption big, environmental pollution is serious, has limited large-scale industrialized production.
According to embodiments of the invention, lessivation adopts liquid silicon tetrachloride (SiCl
4), the effect and the effect of carrying out drip washing with traditional water are all inequality.In the present invention, adopt liquid silicon tetrachloride (SiCl
4) tail gas is carried out drip washing can remove impurity in the tail gas, as mentioned above, described tail gas is except mainly comprising hydrogen (H
2), hydrogenchloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2), trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4), owing to produce in the process of polysilicon, also can produce impurity such as solid impurity and high chlorosilane, therefore, utilize liquid silicon tetrachloride (SiCl4) that tail gas is carried out drip washing, can remove the above-mentioned impurity in the tail gas.
Simultaneously, owing in the production reduction process of polysilicon, also can produce the part by product---silicon tetrachloride (SiCl
4), common every production 1kg polysilicon can produce the silicon tetrachloride (SiCl about 10kg
4), therefore, if silicon tetrachloride can't be handled and use, the production of so much crystal silicon just is restricted.
Therefore, according to the present invention, the silicon tetrachloride that produces in the production of polysilicon can be used for tail gas is carried out drip washing, so that tail gas such as above-mentioned impurity in the removal tail gas and part hydrogenchloride.
And then, the liquid silicon tetrachloride that has absorbed hydrogenchloride in lessivation is heated up and/or pressurizes, make hydrogenchloride from liquid silicon tetrachloride, be desorbed, thereby separating hydrogen chloride and silicon tetrachloride, the liquid silicon tetrachloride that has for example absorbed hydrogenchloride is raised to 70～220 ℃ and/or be pressurized to 0.1～2.0Mpa, yet the present invention is not limited to this.The silicon tetrachloride of isolating hydrogenchloride can circulate and be used for drip washing.
In addition, as mentioned above, adopt hydrogenation technology (by hydrogen, the hydrogen that for example from tail gas, reclaims, reductive action make the silicon tetrachloride reaction produce trichlorosilane) silicon tetrachloride can be converted into trichlorosilane (SiHCl again
3), trichlorosilane (SiHCl
3) after purifying, can return in the production system again and reuse, thereby make material in production of polysilicon, obtain recycle.
According to embodiments of the invention, utilize silicon tetrachloride (SiCl
4) tail gas is carried out drip washing before to tail gas pressurization and cooling, carrying out.Yet, it will be appreciated that, also can be at hydrogen (H
2), hydrogenchloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2) and trichlorosilane (SiHCl
3), silicon tetrachloride (SiCl
4) after the gas-liquid separation, utilize absorption agent (liquid silicon tetrachloride) gaseous mixture to be carried out drip washing before absorbing, perhaps utilize absorption agent absorb (liquid silicon tetrachloride) afterwards, utilizing sorbent material (gac) absorption, carrying out drip washing before filtering.Certainly, also can in two or more processes, carry out drip washing simultaneously.
Following table shows the method according to this invention and conventional wet side compares the effect that hydrogen reclaims.
The present invention is to the comparison to the tail gas recycle effect of tail gas recycle effect and conventional art
| Project | The present invention | Conventional wet |
| Tail gas recycle rate % | 99.99％ | 70～85％ |
| Tail gas recycle purity | More than 99.99% | 95～99％ |
As can be seen, utilize method of the present invention from above-mentioned table, the rate of recovery of tail gas and recovery quality all are much higher than traditional wet method, according to dry method of the present invention, tail gas almost completely obtains reclaiming and utilizing, and has reduced consumption of raw materials, save cost, reduced pollution.
Although foregoing has illustrated and has described embodiments of the invention, but for those skilled in the art in this area, without departing from the principles and spirit of the present invention, can change these embodiment, so scope of the present invention is limited by claims and equivalent processes thereof.
Claims (7)
1. method of producing polysilicon may further comprise the steps:
With industrial silicon and hydrogenchloride is raw material, and reaction generates trichlorosilane;
With described trichlorosilane after purifying and hydrogen reaction, thereby reduction generates polysilicon;
Collect and generate the tail gas that trichlorosilane, purify trichlorosilane and generation polysilicon process produce, wherein said tail gas mainly comprises hydrogen, hydrogenchloride and chlorosilane, and described chlorosilane mainly comprises dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride;
Pressurization and cool off described tail gas, described hydrogen, hydrogenchloride, dichloro-dihydro silicon remain gaseous state, thereby by gas-liquid separation gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon are separated with silicon tetrachloride with the trichlorosilane of liquid state so that make described trichlorosilane and silicon tetrachloride become liquid;
Silicon tetrachloride with liquid state carries out drip washing to gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon, thereby remove hydrogenchloride, solid impurity and high chlorosilane in the tail gas, and the liquid silicon tetrachloride that has absorbed hydrogenchloride in lessivation heated up, make hydrogenchloride desorb from liquid silicon tetrachloride;
Make gasiform hydrogen, hydrogenchloride and dichloro-dihydro silicon by liquid absorption agent, so that hydrogenchloride and dichloro-dihydro silicon are dissolved in the liquid absorption agent, thereby hydrogen is separated with dichloro-dihydro silicon with hydrogenchloride, thus recover hydrogen;
The absorption agent that has dissolved hydrogenchloride and dichloro-dihydro silicon is heated up, hydrogenchloride and dichloro-dihydro silicon are desorbed from stripping liquid;
The gasiform hydrogenchloride that desorbs from stripping liquid by control and the pressure of dichloro-dihydro silicon and/or temperature make dichloro-dihydro silicon become liquid state and hydrogenchloride remains gaseous state, thereby separation is also reclaimed hydrogenchloride and dichloro-dihydro silicon respectively, and wherein said absorption agent is a silicon tetrachloride; With
By controlling the liquid trichlorosilane and the temperature and/or the pressure of silicon tetrachloride, make trichlorosilane become gaseous state and silicon tetrachloride remains liquid state, thereby by gas-liquid separation trichlorosilane is separated with silicon tetrachloride, reclaim trichlorosilane and silicon tetrachloride thus respectively.
2. the method for production polysilicon according to claim 1, further comprise: utilize gaseous hydrogen chloride and chlorosilane remaining in adsorbents adsorb and the filtering hydrogen, thereby hydrogen is separated with chlorosilane with the hydrogenchloride of described remnants, and wherein said sorbent material is a gac.
3. according to the method for the production polysilicon described in the claim 2, further comprise:
Hydrogenchloride and the chlorosilane that is attracted in the sorbent material heated; With
Utilize gaseous hydrogen chloride and chlorosilane after hydrogen will heat in sorbent material, to take out of.
4. the method for production polysilicon according to claim 3, the hydrogenchloride and the chlorosilane that wherein are attracted in the sorbent material are heated to 80～180 ℃.
5. the method for production polysilicon according to claim 1 further comprises: make the silicon tetrachloride and the hydrogen reaction of recovery, be used to produce polysilicon so that generate trichlorosilane.
6. the method for production polysilicon according to claim 1, wherein pressurizeing and cooling off described tail gas is that tail gas is pressurized to 0.3～1.5MPa and is cooled to-20～-70 ℃.
7. the method for production polysilicon according to claim 1, the gasiform hydrogenchloride that wherein desorbs from stripping liquid and the pressure of dichloro-dihydro silicon are controlled as 0.1～2.0MPa and/or temperature is controlled as 30～-70 ℃.
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| CN101538043B (en) * | 2009-03-27 | 2011-01-26 | 华陆工程科技有限责任公司 | Method for recovering trichlorosilane synthesis tail gas |
| CN103553048B (en) * | 2013-11-08 | 2016-01-20 | 中国恩菲工程技术有限公司 | The method and system that in polysilicon production process, Matter Transfer utilizes |
| CN105417544B (en) * | 2015-12-10 | 2017-12-05 | 云南冶金云芯硅材股份有限公司 | The system and method for preparing polysilicon |
| CN107098348B (en) * | 2016-02-19 | 2021-11-02 | 巴彦淖尔聚光硅业有限公司 | Polycrystalline silicon production process |
| CN107758671A (en) * | 2016-08-15 | 2018-03-06 | 内蒙古盾安光伏科技有限公司 | Reduction furnace and the polysilicon production process using the reduction furnace |
| CN108467042B (en) * | 2018-03-20 | 2019-12-31 | 中国恩菲工程技术有限公司 | Preparation method of electronic grade polycrystalline silicon |
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