CN101357286B - Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon - Google Patents
Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon Download PDFInfo
- Publication number
- CN101357286B CN101357286B CN2007101197430A CN200710119743A CN101357286B CN 101357286 B CN101357286 B CN 101357286B CN 2007101197430 A CN2007101197430 A CN 2007101197430A CN 200710119743 A CN200710119743 A CN 200710119743A CN 101357286 B CN101357286 B CN 101357286B
- Authority
- CN
- China
- Prior art keywords
- dichloro
- silicon
- dihydro silicon
- tail gas
- hydrogen chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
A method for recovering dichlordihydrosilicate from tail gas generated from polysilicon production comprises the following steps: the tail gas is leached at low temperature, pressurized and cooled for gas-liquid separation; gaseous hydrogen, hydrogen chloride and the dichlordihydrosilicate pass through a liquid absorbent to cause the gaseous hydrogen chloride and the dichlordihydrosilicate to be dissolved in the liquid absorbent, and the hydrogen is separated from the hydrogen chloride and the dichlordihydrosilicate; the hydrogen chloride and the dichlordihydrosilicate dissolved in the liquid absorbent are desorbed by increasing the temperature; the gas-liquid separation is carried out on the desorbed gaseous hydrogen chloride and the dichlordihydrosilicate by controlling the pressure and/or the temperature, therefore, the hydrogen chloride becomes gaseous and the dichlordihydrosilicate becomes liquid, and then the dichlordihydrosilicate is recovered. By adopting dry processing, the dichlordihydrosilicate in the tail gas is recovered and can be reused in the polysilicon production, therefore, the method has the advantages of adequate utilization of raw materials, reducing pollutants, solving the problem of environmental pollution, improving product quality and lowering cost.
Description
Technical field
The present invention relates to the recovery and treatment method of the tail gas that a kind of industrial production polysilicon produced, more specifically, relate to a kind of method that from produce the tail gas that polysilicon produced, reclaims dichloro-dihydro silicon.
Background technology
Polysilicon is the raw material of preparation monocrystalline silicon, finally is used to produce integrated circuit and electronic device, and be one of the highest basic material of information industry consumption maximum, purity requirement, also be the product and the industry of state key encourage growth.
World advanced person's production of polysilicon technology by the company monopolizing of beautiful, day, moral three states always, all there be know-how and technical characterstic separately in each company, through constantly research, exploitation, formed production technology separately, and from national strategy angle separately, strict control technology transfer also monopolizes global polysilicon market.
China's polysilicon industry is started in the fifties, middle nineteen sixties is realized industrialization, early seventies is pell-mell development once, factory is family surplus in the of 20 nearly, and what all adopt is traditional Siemens process, backward in technique, environmental pollution is serious, supplies consumption is big, production cost height, most losses of enterprise and stop production in succession or change the line of production.
The outstanding characteristics of tradition production of polysilicon technology are tail gas hydrometallurgic recovery technology, be that tail gas in the reduction furnace is used water wash after preliminary pressurization separates chlorosilane, recover hydrogen, but do not recycle dichloro-dihydro silicon etc., simultaneously, because in the water wash process, foreign gases such as water oxygen gas, carbon dioxide can be polluted the hydrogen of preparing recovery, so a large amount of hydrogen that reclaim also need to purify once more, in addition, after the chlorosilane hydrolysis, also can produce large amount of sewage in the lessivation, need further to handle, also can cause environmental pollution and supplies consumption big.And the dichloro-dihydro silicon that produces in the production fails to be fully utilized, and has both wasted the energy, has caused environmental pollution again.
Summary of the invention
Purpose of the present invention is intended to overcome at least one above-mentioned shortcoming of the prior art, proposes a kind of method that can reclaim dichloro-dihydro silicon from produce the tail gas that polysilicon produced.
Utilize method of the present invention, not only can the dichloro-dihydro silicon in the tail gas be reclaimed fully with recycling, and can significantly reduce the generation of pollutant in the production, made full use of material simultaneously, reduced cost.
For achieving the above object, embodiments of the invention propose a kind of method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced, and described tail gas mainly comprises hydrogen (H
2), hydrogen chloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2), trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4), said method comprising the steps of: pressurize and cool off described tail gas, described hydrogen, hydrogen chloride, dichloro-dihydro silicon remain gaseous state, thereby separate with silicon tetrachloride with the trichlorosilane of liquid state by hydrogen, hydrogen chloride and the dichloro-dihydro silicon of gas-liquid separation with gaseous state so that make described trichlorosilane and silicon tetrachloride become liquid; The hydrogen, hydrogen chloride and the dichloro-dihydro silicon that make gaseous state, so that the hydrogen chloride of gaseous state and dichloro-dihydro silicon are dissolved in the liquid absorbent thereby separate with hydrogen chloride hydrogen by liquid absorbent with dichloro-dihydro silicon; The absorbent that has dissolved hydrogen chloride and dichloro-dihydro silicon is heated up and/or pressurizes, hydrogen chloride and dichloro-dihydro silicon are desorbed from stripping liquid; The hydrogen chloride of the gaseous state that desorbs by control and the pressure and/or the temperature of dichloro-dihydro silicon make dichloro-dihydro silicon become liquid state, thereby separating hydrogen chloride and dichloro-dihydro silicon reclaim dichloro-dihydro silicon thus.
The further embodiment according to the present invention, described tail gas is pressurized to 0.1～0.9Mpa.Described tail gas is cooled to-20～-70 ℃.Described absorbent is a silicon tetrachloride.
The further embodiment according to the present invention, the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced also comprises: the liquid silicon tetrachloride that has absorbed hydrogen chloride is heated up and/or pressurizes, make that hydrogen chloride is desorbed.
Particularly, the described liquid silicon tetrachloride that has absorbed hydrogen chloride is raised to 70～220 ℃; The described liquid silicon tetrachloride that has absorbed hydrogen chloride is pressurized to 0.1～2.0Mpa.The temperature of the hydrogen chloride of the gaseous state that desorbs and dichloro-dihydro silicon is controlled to be 30～-70 ℃.The pressure of the hydrogen chloride of the gaseous state that desorbs and dichloro-dihydro silicon is controlled to be 0.1～2.0Mpa.
The further embodiment according to the present invention, the described method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced also is included in before tail gas pressurization and the cooling, with liquid silicon tetrachloride tail gas is carried out drip washing.
The further embodiment according to the present invention, the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced also comprises: the liquid silicon tetrachloride that has absorbed hydrogen chloride in lessivation is heated up and/or pressurizes, make hydrogen chloride be desorbed from liquid silicon tetrachloride.
Particularly, the described liquid silicon tetrachloride that has absorbed hydrogen chloride is raised to 70～220 ℃.The described liquid silicon tetrachloride that has absorbed hydrogen chloride is pressurized to 0.1～2.0Mpa.
Overcome and eliminated the shortcoming of conventional wet recovery technology according to the present invention, dichloro-dihydro silicon in the tail gas is recycled simultaneously, especially the dichloro-dihydro silicon that reclaims is turned back in the production of polysilicon operation, make the means of production can be able to sufficient utilization, and significantly reduced the generation and the quantity of pollutant in the production.
According to the present invention, material is in closed cycle is used, greatly reduce the consumption of raw and auxiliary material, fundamentally solved the problem of environmental pollution that production of polysilicon causes, simultaneously, save project investment, improved product quality, reduce cost, made the construction and upgrading of production of polysilicon project obtain sufficient initiative.
The feature and advantage that the present invention adds part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Fig. 1 is the industrial production schematic flow sheet of polysilicon;
Fig. 2 is the schematic flow sheet according to first embodiment of the invention;
Fig. 3 is the schematic flow sheet according to second embodiment of the invention.
The specific embodiment
So that explain the present invention, described embodiment is exemplary, can not be interpreted as limitation of the present invention below by describing specific embodiment with reference to the accompanying drawings.
Embodiment 1:
With reference to figure 1, wherein show the FB(flow block) that to use according to the industrial production polysilicon of the dichloro-dihydro silicon recovery method of the embodiment of the invention, in the prior art, there is several different methods can carry out the production of industrialization polysilicon, use production of polysilicon technology of the present invention, be that to utilize industrial silicon and hydrogen chloride (HCl) be primary raw material, generate with trichlorosilane (SiHCl by the control reaction condition
3) be master's the chlorosilane and the mixture of hydrogen, pass through existing purification technique then to trichlorosilane (SiHCl
3) purify after, send into reduction furnace, make trichlorosilane (SiHCl
3) and auxiliary material hydrogen (H
2) reaction, reduction generates polysilicon.
In the process of above-mentioned industrial production polysilicon, the tail gas of generation mainly comprises hydrogen (H
2), hydrogen chloride (HCl) and chlorosilane, described chlorosilane mainly comprises dichloro-dihydro silicon (SiH
2Cl
2), trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4).
Reaction main in the production process is:
Need to prove, owing in primary industry silicon, also have plurality of impurities, for example iron, aluminium, calcium, boron, phosphorus or the like, so, in reaction, also can produce the chloride of calcium, the chloride of iron, the chloride of aluminium and the chloride of boron, and solid and/or gaseous impurities such as other high chlorosilanes, these impurity also can be mixed in the middle of the tail gas, certainly content is less, and the method according to this invention also can be handled these impurity, and this will be described below.
Below with reference to the method that from produce tail gas that polysilicon produced reclaim dichloro-dihydro silicon of Fig. 2 description according to first embodiment of the invention, Fig. 2 shows the flow chart that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced.
At first, the tail gas that produces in the polysilicon production process is collected, and the tail gas of collecting is pressurizeed and cools off, and for example, tail gas is pressurized to about 0.3～0.9Mpa and is cooled to approximately-20～-70 ℃, because described trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4) and described hydrogen (H
2), hydrogen chloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2) between the boiling point difference, therefore, under above-mentioned process conditions, the trichlorosilane (SiHCl in the tail gas
3) and silicon tetrachloride (SiCl
4) become liquid state, and described hydrogen (H
2) still remain gaseous state, described hydrogen chloride (HCl) and dichloro-dihydro silicon (SiH simultaneously
2Cl
2) also mainly exist with gaseous form, thereby just hydrogen, hydrogen chloride and the dichloro-dihydro silicon of gaseous state can be separated with silicon tetrachloride with the trichlorosilane of liquid state by gas-liquid separation.
Above-mentioned pressure condition 0.3～0.9Mpa and temperature conditions-20～-70 ℃ only are exemplary, for those having ordinary skill in the art will appreciate that, as long as can separate with silicon tetrachloride with the trichlorosilane of liquid state by hydrogen, hydrogen chloride and the dichloro-dihydro silicon of gas-liquid separation with gaseous state, any suitable pressure and temperature condition can be used.
Then, utilize liquid silicon tetrachloride (SiCl
4) as absorbent, make most gaseous hydrogen chloride (HCl) and dichloro-dihydro silicon (SiH
2Cl
2) be dissolved in the absorbent, so that with the hydrogen (H of gaseous state
2) and hydrogen chloride (HCl) and dichloro-dihydro silicon (SiH
2Cl
2) initial gross separation, yet, for persons of ordinary skill in the art may appreciate that in isolated gaseous hydrogen, still have the gaseous hydrogen chloride (HCl) and the silicon tetrachloride (SiCl of small portion of residual
4) be mixed in wherein.In addition, need to prove that absorbent is not limited to liquid silicon tetrachloride.
For the hydrogen chloride that is absorbed as absorbent by liquid silicon tetrachloride, can hydrogen chloride and the dichloro-dihydro silicon that be dissolved in the stripping liquid be desorbed by the method that heats up and/or pressurize; In the present embodiment, it is 70～220 ℃ that employing is warmed up to, and is pressurized to 0.1～2.0Mpa simultaneously, just hydrogen chloride and dichloro-dihydro silicon can be desorbed.
Certainly, above-mentioned pressure condition 0.1～2.0Mpa and temperature conditions only are exemplary for 70～220 ℃, as long as hydrogen chloride and dichloro-dihydro silicon can be desorbed for persons of ordinary skill in the art may appreciate that, any suitable pressure and temperature condition can be used.
In like manner, utilize the difference of physics boiling point once more, gaseous hydrogen chloride and the dichloro-dihydro silicon that is desorbed is passed through controlled pressure and/or control temperature again, carry out gas-liquid separation, the pressure of the hydrogen chloride of the gaseous state that wherein desorbs and dichloro-dihydro silicon is controlled to be 0.1～2.0Mpa.The temperature of the hydrogen chloride of the gaseous state that desorbs and dichloro-dihydro silicon is controlled to be 30～-70 ℃.Make that hydrogen chloride is gaseous state, dichloro-dihydro silicon is liquid, and collects with surge tank respectively or directly fail by pipeline and reclaim dichloro-dihydro silicon.
The dichloro-dihydro silicon of separating can turn back in the polysilicon production process, also can be used as new byproduct sells, if with dichloro-dihydro silicon is that raw material is produced polysilicon, then making also can be by recycling fully in polysilicon production process as the dichloro-dihydro silicon of accessory substance, thereby reduced production cost, improved the utilization ratio of raw material.And, reduced the generation of pollutant, avoid environmental pollution, and eliminated the needs of handling pollutant, so, reduced production cost and energy resource consumption.
Embodiment 2:
Below with reference to the method that from produce tail gas that polysilicon produced reclaim dichloro-dihydro silicon of Fig. 3 description according to second embodiment of the invention.Fig. 3 shows the FB(flow block) according to second embodiment of the invention, and the main distinction of present embodiment and above-mentioned first embodiment is, also comprises with liquid silicon tetrachloride (SiCl
4) step of tail gas being carried out drip washing.
In the middle of traditional wet method tail gas treatment process process, usually all be that water carries out drip washing to tail gas, purpose is that the hydrogen chloride (HCl) in the tail gas is entered in the water by drip washing, the chlorosilane that part does not reclaim is hydrogen chloride and Silicon dioxide, hydrate by the water wash posthydrolysis, this type of sewage needs to handle separately, causes supplies consumption big, and environmental pollution is serious, simultaneously also waste the hydrogen chloride that can be used as raw materials for production in a large number, limited large-scale industrialized production.
According to embodiments of the invention, lessivation adopts liquid silicon tetrachloride (SiCl
4), the effect and the effect of carrying out drip washing with traditional water are all inequality.In the present invention, adopt liquid silicon tetrachloride (SiCl
4) tail gas is carried out drip washing can remove impurity in the tail gas, as mentioned above, described tail gas is except mainly comprising hydrogen (H
2), hydrogen chloride (HCl), dichloro-dihydro silicon (SiH
2Cl
2), trichlorosilane (SiHCl
3) and silicon tetrachloride (SiCl
4), owing to produce in the process of polysilicon, also can produce impurity such as solid impurity and high chlorosilane, therefore, utilize liquid silicon tetrachloride (SiCl
4) tail gas is carried out drip washing, can remove the above-mentioned impurity in the tail gas.
In addition, owing in the production reduction process of polysilicon, also can produce the part accessory substance---silicon tetrachloride (SiCl
4), common every production 1kg polysilicon can produce the silicon tetrachloride (SiCl about 10kg
4), therefore, if silicon tetrachloride can't be handled and use, restriction is just received in the production of so much crystal silicon.Therefore, according to the present invention, the silicon tetrachloride that produces in the production of polysilicon can be used for tail gas is carried out drip washing.
Simultaneously, in the present embodiment, the liquid silicon tetrachloride that has absorbed dichloro-dihydro silicon and hydrogen chloride in lessivation is heated up and/or pressurizes, make that dichloro-dihydro silicon and hydrogen chloride are desorbed once more.In the present embodiment, can adopt to be warmed up to 70～220 ℃, be pressurized to 0.1～2.0Mpa simultaneously, dichloro-dihydro silicon and hydrogen chloride are desorbed.And then, dichloro-dihydro silicon and the hydrogen chloride that is desorbed are simultaneously carried out separation and purification once more by the gas-liquid separation process.The temperature of the hydrogen chloride of the gaseous state that desorbs particularly, and dichloro-dihydro silicon is controlled as 30～-70 ℃.The pressure of the hydrogen chloride of the described gaseous state that desorbs and dichloro-dihydro silicon is controlled as 0.1～2.0Mpa.
Certainly, 70～220 ℃ of above-mentioned pressure condition 0.1～2.0Mpa and temperature conditions, and temperature conditions 30～-70 ℃, only be exemplary, as long as hydrogen chloride can be desorbed for persons of ordinary skill in the art may appreciate that, any suitable pressure and temperature condition can be used.
Following table shows the method according to this invention and conventional wet side compares the effect that dichloro-dihydro silicon reclaims.
The present invention is to the comparison to the hydrogen chloride recovering effect of hydrogen chloride recovering effect and conventional art
| Project | The present invention | Conventional wet |
| Dichloro-dihydro silicon rate of recovery % | More than 99.99% | Drench in the entry or and get rid of as waste gas |
| Dichloro-dihydro silicon reclaims purity | More than 99% | Produce large amount of sewage, waste gas |
From above-mentioned table as can be seen, utilize method of the present invention, the rate of recovery of dichloro-dihydro silicon and recovery quality all are higher than traditional wet method far away, according to the present invention, dichloro-dihydro silicon almost completely obtain reclaiming and purity very high, therefore, the raw material of polysilicon is produced in conduct once more, thereby is recycled, reduced consumption of raw materials, saved cost, reduced pollution, and effect is apparent from above table.
For the ordinary skill in the art, can carry out various conspicuous improvement to the method that from produce the tail gas that polysilicon produced, reclaims dichloro-dihydro silicon of the present invention, and be applied in the middle of other technologies of utilizing industrial silicon production polysilicon.
Although foregoing has illustrated and has described embodiments of the invention, but for those skilled in the art in this area, without departing from the principles and spirit of the present invention, can change these embodiment, so scope of the present invention is limited by claims and equivalent thereof.
Claims (12)
1. method that from produce the tail gas that polysilicon produced, reclaims dichloro-dihydro silicon, described tail gas mainly comprises hydrogen, hydrogen chloride and chlorosilane, described chlorosilane mainly comprises dichloro-dihydro silicon, trichlorosilane and silicon tetrachloride, said method comprising the steps of:
Pressurization and cool off described tail gas, described hydrogen, hydrogen chloride, dichloro-dihydro silicon remain gaseous state, thereby separate with silicon tetrachloride with the trichlorosilane of liquid state by hydrogen, hydrogen chloride and the dichloro-dihydro silicon of gas-liquid separation with gaseous state so that make described trichlorosilane and silicon tetrachloride become liquid;
The hydrogen, hydrogen chloride and the dichloro-dihydro silicon that make gaseous state, so that the hydrogen chloride of gaseous state and dichloro-dihydro silicon are dissolved in the liquid absorbent thereby separate with hydrogen chloride hydrogen by liquid absorbent with dichloro-dihydro silicon;
The absorbent that has dissolved hydrogen chloride and dichloro-dihydro silicon is heated up and/or pressurizes, so that hydrogen chloride and dichloro-dihydro silicon are desorbed from stripping liquid; With
The hydrogen chloride of the gaseous state that desorbs by control and the pressure and/or the temperature of dichloro-dihydro silicon make dichloro-dihydro silicon become liquid state, thereby separating hydrogen chloride and dichloro-dihydro silicon reclaim dichloro-dihydro silicon thus.
2. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, wherein said tail gas is pressurized to 0.3～0.9Mpa.
3. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, wherein said tail gas is cooled to-20～-70 ℃.
4. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, wherein said stripping liquid is a silicon tetrachloride.
5. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, the wherein said absorbent that has dissolved hydrogen chloride and dichloro-dihydro silicon is raised to 70～220 ℃.
6. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, the wherein said absorbent that has dissolved hydrogen chloride and dichloro-dihydro silicon is pressurized to 0.1～2.0Mpa.
7. according to any described method that from produce the tail gas that polysilicon produced, reclaims dichloro-dihydro silicon in the claim 1～6, further comprise: before to tail gas pressurization and cooling, tail gas is carried out drip washing with liquid silicon tetrachloride.
8. the method that from produce the tail gas that polysilicon produced, reclaims dichloro-dihydro silicon according to claim 7, wherein the liquid silicon tetrachloride that has absorbed dichloro-dihydro silicon in lessivation is heated up and/or pressurizes, make dichloro-dihydro silicon from liquid silicon tetrachloride, be desorbed.
9. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 8, the wherein said liquid silicon tetrachloride that has absorbed dichloro-dihydro silicon is raised to 70～220 ℃.
10. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 8, the wherein said liquid silicon tetrachloride that has absorbed dichloro-dihydro silicon is pressurized to 0.1～2.0Mpa.
11. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, the pressure of the hydrogen chloride of the gaseous state that wherein desorbs and dichloro-dihydro silicon is controlled to be 0.1～2.0Mpa.
12. the method that reclaims dichloro-dihydro silicon from produce the tail gas that polysilicon produced according to claim 1, the temperature of the hydrogen chloride of the gaseous state that wherein desorbs and dichloro-dihydro silicon is controlled to be 30～-70 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101197430A CN101357286B (en) | 2007-07-31 | 2007-07-31 | Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101197430A CN101357286B (en) | 2007-07-31 | 2007-07-31 | Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101357286A CN101357286A (en) | 2009-02-04 |
| CN101357286B true CN101357286B (en) | 2011-02-16 |
Family
ID=40329970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101197430A Active CN101357286B (en) | 2007-07-31 | 2007-07-31 | Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101357286B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102489124A (en) * | 2011-12-07 | 2012-06-13 | 天津大学 | Trichlorosilane tail gas recovery device and method |
| CN102614741A (en) * | 2012-03-31 | 2012-08-01 | 四川新光硅业科技有限责任公司 | Tail gas recovery processing method for polycrystalline silicon production |
| CN102795629B (en) * | 2012-08-03 | 2014-04-23 | 中国恩菲工程技术有限公司 | Method for purification of dichlorosilane from dry method recovered material |
| CN102923715A (en) * | 2012-11-20 | 2013-02-13 | 天威四川硅业有限责任公司 | Novel process for recycling tail gas generated in polycrystalline silicon production |
| CN103112858B (en) * | 2013-01-15 | 2015-02-25 | 宁波大学 | Liquid-phase chlorination method of dichlorosilane in polysilicon byproduct |
| CN103073003A (en) * | 2013-01-30 | 2013-05-01 | 中国恩菲工程技术有限公司 | Treatment method of tail gas of polysilicon production |
| CN104923026B (en) * | 2014-03-19 | 2017-02-15 | 新特能源股份有限公司 | Polysilicon tail gas recovering method and device thereof |
-
2007
- 2007-07-31 CN CN2007101197430A patent/CN101357286B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101357286A (en) | 2009-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101327912B (en) | Method for reclaiming hydrogen from tail gas from polysilicon production | |
| CN101357764B (en) | Polysilicon preparation method of recovering hydrogen chloride in circulating exhaust | |
| CN101357292B (en) | Method for recovering tail-gas generated during producing polycrystalline silicon using silicon tetrachloride | |
| CN101377376B (en) | Method for recovering tail gas generated by polycrystalline silicon production | |
| CN101357288B (en) | Hydrogen chloride circulation recovering method from off-gas generated from the production of polycrystalline silicon | |
| CN101357286B (en) | Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon | |
| CN103058140B (en) | Recovery system and recovery method of by-product in polycrystalline silicon production | |
| CN103553048B (en) | The method and system that in polysilicon production process, Matter Transfer utilizes | |
| CN101376499B (en) | Method for preparing polysilicon | |
| CN101372336B (en) | Method for preparing polysilicon | |
| CN102030329A (en) | Polycrystalline silicon producing device and process | |
| CN102838121B (en) | Method and device for recycling tail gas in production of polycrystalline silicon | |
| CN103382032A (en) | Preparation method for trichlorosilane from silicon tetrachloride | |
| CN101376078B (en) | Method for recovering and processing tail gas produced from production of polycrystalline silicon | |
| CN101372335B (en) | Method for preparing polysilicon | |
| CN101357287B (en) | Method for recovering hydrogen chloride from off-gas generated from the production of polycrystalline silicon | |
| CN104310406B (en) | The retracting device of technique of trichlorosilane synthetic tail gas and recovery method thereof | |
| CN102020282A (en) | Method for producing trichlorosilane by using silicon tetrachloride | |
| CN102897770B (en) | A kind of hydrogenation of silicon tetrachloride is improved one's methods and device | |
| CN202766304U (en) | Polysilicon production tail gas recycling device | |
| CN105480981A (en) | Method and device for recovering dichlorosilane from tail gas in reduction production of polysilicon | |
| CN116143078A (en) | System and method for recycling hydrogen chloride in polycrystalline silicon tail gas | |
| CN217458845U (en) | System for increasing reaction efficiency of polycrystalline silicon reduction furnace | |
| CN203033766U (en) | Recovery system for byproducts in polycrystalline silicon production | |
| CN104555925A (en) | Method for recycling tail gas in trichlorosilane production process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |