CN101373731A - Electrostatic chuck apparatus and temperature control method thereof - Google Patents
Electrostatic chuck apparatus and temperature control method thereof Download PDFInfo
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- CN101373731A CN101373731A CN 200810224801 CN200810224801A CN101373731A CN 101373731 A CN101373731 A CN 101373731A CN 200810224801 CN200810224801 CN 200810224801 CN 200810224801 A CN200810224801 A CN 200810224801A CN 101373731 A CN101373731 A CN 101373731A
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Abstract
The invention discloses a plasma processing device and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a first cooling passage and a second cooling passage which can provide cooling media to a cooling medium cavity, and a passage switching device which selects either of the first cooling passage or the second cooling passage to be communicated with the cooling medium cavity. Temperature differences exist between the cooling media in the two cooling passages. The invention further discloses a temperature control method of the electrostatic chuck assembly. Through the method, cooling media at different temperatures are provided for the cooling medium cavity in a substrate of the electrostatic chuck assembly through at least two cooling passages; when temperature rise is needed, the cooling medium at the higher temperature is imported to the cooling medium cavity; and when temperature reduction is needed, the cooling medium at the lower temperature is imported in the cooling medium cavity. When the temperature is increased, the electrostatic chuck assembly can obtain higher basic temperature, thereby being conducive to reducing the power of a heater and saving heating time. When the temperature is reduced and the temperature reduction gradient is increased, the electrostatic chuck assembly can be greatly cooled in a short time.
Description
Technical field
The present invention relates to the temperature control technology of microelectronics technology, particularly relate to a kind of electrostatic chuck apparatus that is used for apparatus for processing plasma, and a kind of temperature-controlled process of electrostatic chuck.
Background technology
In the apparatus for processing plasma (for example etching machine) application of electrostatic chuck more and more widely, the main effect of electrostatic chuck is to be maintained fixed and supporting wafers is waited for workpiece, avoids to be processed displacement to occur in technical process.
Electrostatic chuck adopts electrostatic attraction to fix to be processed, and mechanical chuck and vacuum chuck with respect to former employing have a lot of advantages.For example, electrostatic chuck can reduce to be processed the breakage that causes owing to reasons such as pressure, collisions when using mechanical chuck, effective working (finishing) area of to be processed can be increased, the deposition of to be processed surface corrosion composition granule can be reduced, and can be in operate as normal under the vacuum environment.
As everyone knows, the temperature of workpiece control is very important for the finishing smoothly of technical process, because electrostatic chuck contacts with workpiece, can realize the workpiece temperature controlling by the temperature of controlling electrostatic chuck.Therefore, the temperature of electrostatic chuck is carried out rapid and precise control and seem very important.
Typical electrostatic chuck comprises matrix and is fixed in static module on the matrix, has the coolant cavity among the matrix, can among the coolant cavity, import coolant by the cooling duct, and make above-mentioned coolant keep lower temperature by cooler (Chiller), realize the reduction of electrostatic chuck temperature with this, and then reduce to be processed temperature.Heater can be set in electrostatic chuck simultaneously, and the rising of electrostatic chuck and to be processed temperature realizes by above-mentioned heater.
The different process step of different technological processes or even same technological process has nothing in common with each other to the temperature requirement of workpiece, sometimes need promptly significantly to change in the short period of time the temperature of workpiece, this rapid adjustment for electrostatic chuck temperature has proposed higher requirement.
In the practical work process, lower if the coolant temperature of cooler is set, will inevitably require that the power of heater significantly increases in the temperature-rise period, prolong the heating-up time simultaneously; If it is higher that the coolant temperature of cooler is set, the occasion temperature gradient that reduces to be processed temperature (for example needing to reduce by 20 degrees centigrade) at needs by a relatively large margin is less, needs to wait for that the long period is so that the temperature of electrostatic chuck is cooled to set point.Therefore, the electrostatic chuck of present most apparatus for processing plasma is difficult to rapidly, significantly change temperature, has prolonged technical process, has restricted the raising of production efficiency, also can cause the decline of processing quality sometimes.
Therefore, changing the temperature of electrostatic chuck how fast, significantly, is the present technical issues that need to address of those skilled in the art.
Summary of the invention
The purpose of this invention is to provide a kind of electrostatic chuck apparatus, the temperature of its electrostatic chuck can be fast, significantly change.Another object of the present invention provides a kind of temperature-controlled process of electrostatic chuck, can fast, significantly change the temperature of electrostatic chuck.
For solving the problems of the technologies described above, the invention provides a kind of electrostatic chuck apparatus, has the coolant cavity among the matrix of its electrostatic chuck, described electrostatic chuck apparatus further comprises can provide first cooling duct, second cooling duct of coolant and the channel switching device of selecting one of described first cooling duct and described second cooling duct to be connected with described coolant cavity to described coolant cavity; There is the temperature difference in coolant in described first cooling duct, described second cooling duct.
Further, the temperature range of coolant is 20 ℃ to 30 ℃ in described first cooling duct, described second cooling duct.
Further, the temperature range of coolant is 0 ℃ to 30 ℃ in described first cooling duct, and the temperature range of the coolant in described second cooling duct is 20 ℃ to 50 ℃.
Further, described electrostatic chuck apparatus further comprises at least one additional cooling duct, and the temperature of coolant is all inequality in described first cooling duct, described second cooling duct and each the described additional cooling duct; Described channel switching device selects one in described first cooling duct, described second cooling duct and each the described additional cooling duct to be connected with described medium cavity.
Further, described electrostatic chuck apparatus further comprises controller, and described controller selects different cooling ducts to be connected with described coolant cavity by described channel switching device during the predetermined condition achievement.
The present invention also provides a kind of apparatus for processing plasma, comprises above-mentioned each described electrostatic chuck apparatus.
Electrostatic chuck apparatus provided by the present invention has two separate cooling ducts, i.e. first cooling duct and second cooling duct, the temperature difference of coolant among both.Can select one of described first cooling duct and described second cooling duct to be connected by channel switching device with described coolant cavity.When needing the temperature of rising electrostatic chuck, can select the wherein higher cooling duct of coolant temperature by channel switching device, for example first cooling duct is communicated with described coolant cavity; The higher coolant of temperature this moment helps electrostatic chuck and obtains higher basal temperature, thereby helps reducing power, the saving required time of heating process of heater.When needing to reduce the temperature of electrostatic chuck, can select the second lower cooling duct of coolant temperature by channel switching device, like this, the cooling gradient can obtain strengthening, heat exchanger effectiveness thereby be improved, thus can realize the significantly cooling of electrostatic chuck in the short period of time.Like this, the temperature of adjusting electrostatic chuck fast, significantly becomes possibility, has shortened technical process, has significantly improved production efficiency and processing quality.Suitably strengthen the temperature difference of coolant in described first cooling duct and described second cooling duct, can obtain more significant technique effect.Plasma processing provided by the present invention obviously also possesses above-mentioned advantage.
The present invention also provides a kind of temperature-controlled process of electrostatic chuck, improve the temperature of described electrostatic chuck by heater, and the temperature of regulating described electrostatic chuck by the coolant in the coolant cavity, described coolant cavity is communicated with at least two cooling ducts, and the temperature of coolant is all inequality in each cooling duct; When need heating up in described coolant cavity the higher coolant of input temp, when needing cooling in described coolant cavity the lower coolant of input temp.
Further, select different cooling ducts to be connected, thereby import the coolant of different temperatures to described coolant cavity with described coolant cavity by channel switching device.
Further, described cooling duct has two, i.e. first cooling duct and second cooling duct, and the temperature range of coolant is 20 ℃ to 30 ℃ among both.
Further, the temperature range of coolant is 0 ℃ to 30 ℃ in described first cooling duct, and the temperature range of the coolant in described second cooling duct is 20 ℃ to 50 ℃.
Further, the switching of described channel switching device is finished when predetermined condition is achieved by controller.
The temperature-controlled process of electrostatic chuck provided by the invention, by two cooling ducts different coolant of delivery temperature in the coolant cavity, when need heating up, electrostatic chuck in described coolant cavity, imports coolant, so that basic heat is provided, shortens the heating-up time and reduces heater power to electrostatic chuck by the higher cooling duct of temperature; When need lowering the temperature, electrostatic chuck in described coolant cavity, imports coolant by the lower cooling duct of temperature, to form bigger cooling gradient, to improve heat exchanger effectiveness, and then shortened technical process, significantly improved production efficiency and processing quality.
Description of drawings
Fig. 1 is the structural representation of first kind of embodiment of electrostatic chuck apparatus provided by the present invention;
Fig. 2 is the structural representation of second kind of embodiment of electrostatic chuck apparatus provided by the present invention;
Fig. 3 is the structural representation of the third embodiment of electrostatic chuck apparatus provided by the present invention;
Fig. 4 is the structural representation of the 4th kind of embodiment of electrostatic chuck apparatus provided by the present invention.
Embodiment
Core of the present invention provides a kind of electrostatic chuck apparatus, and the temperature of its electrostatic chuck can be fast, significantly change.Another core of the present invention provides a kind of temperature-controlled process of electrostatic chuck, can fast, significantly change the temperature of electrostatic chuck.
In order to make those skilled in the art person understand the present invention program better, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 1, Fig. 1 is the structural representation of first kind of embodiment of electrostatic chuck apparatus provided by the present invention.
In a kind of embodiment, electrostatic chuck apparatus provided by the present invention comprises electrostatic chuck 1, and electrostatic chuck 1 comprises matrix substantially and is fixedly installed in static module on the described matrix.
In order to regulate, can among described matrix, to offer the coolant cavity, and in described coolant cavity, import coolant by the cooling duct to the temperature of electrostatic chuck 1.The coolant that temperature is lower (normally liquid medium) can carry out heat exchange with described matrix, and heat is transferred to coolant by described matrix, thereby realizes the cooling of described matrix.
The coolant that flows out described coolant cavity can be cooled to set point by cooler (Chiller), so that re-enter in the described coolant cavity.
The intensification of described matrix can realize that heater is built among the described matrix usually by heater.
The coolant cavity of described matrix inside is communicated with first cooling duct 21, and by first cooling duct 21 to wherein importing coolant, first cooling duct 21 is connected with first cooler 31, and therefore coolant wherein can be maintained first temperature T 1 of setting by first cooler 31.
The coolant cavity of described matrix inside further is communicated with second cooling duct 22, and equally can be by second cooling duct 22 to wherein importing coolant; Certainly, a certain moment has only a passage to import coolant usually in described coolant cavity.Second cooling duct 22 is connected with second cooler 32, and therefore coolant wherein can be maintained second temperature T 2 of setting by second cooler 32.
The temperature of the coolant in first cooling duct 21, second cooling duct 22 there are differences, for example, above-mentioned first temperature T 1 can be higher than second temperature T 2, can accurately set the temperature difference △ T of first temperature T 1 and second temperature T 2 by first cooler 31 and second cooler 32.
When between the different step of different process flow process or same technological process, switching, may need to improve the temperature of electrostatic chuck, but only rely on described heater will expend the long time, even under the bigger situation of intensification amplitude, use high-power heater also to be difficult to realize the timely cooling of electrostatic chuck especially; Its reason is that the heat of the electrostatic chuck of this moment mainly relies on heater to provide.
Electrostatic chuck apparatus provided by the present invention can address this problem preferably.In the time of need significantly heating up, can select first cooling duct 21 to be connected with coolant cavity in electrostatic chuck 1 matrix, the higher relatively coolant of input temp in described coolant cavity so rapidly, therefore can within a short period of time the basal temperature of described matrix significantly being improved, is that starting point further heats by described heater with above-mentioned basal temperature then again.Obviously, because basal temperature is higher, even use lower-powered heater also can realize the significantly intensification of electrostatic chuck 1 in the short period of time.
When needing to reduce the temperature of electrostatic chuck 1, still select first cooling duct 21 to be connected and to cause temperature-fall period consuming time longer with coolant cavity in electrostatic chuck 1 matrix, its reason is that the temperature of coolant in the described coolant cavity is higher, and the temperature difference of coolant and electrostatic chuck 1 is less, heat exchanger effectiveness is lower.
When needs are lowered the temperature, electrostatic chuck apparatus provided by the present invention can select second cooling duct 22 to be connected with coolant cavity in electrostatic chuck 1 matrix, can promptly the higher coolant of temperature in the described coolant cavity be replaced into the lower coolant of temperature like this, therefore, promptly can significantly enlarge the temperature difference of electrostatic chuck 1 and heat transferring medium in the short period, bigger cooling gradient obviously can significantly improve heat exchanger effectiveness, and the time that temperature-fall period consumed will inevitably significantly reduce.
Electrostatic chuck apparatus provided by the present invention switches between first cooling duct 21 and second cooling duct 22 by channel switching device 4; How concrete switching mode is not key point of the present invention, and those skilled in the art can realize the basic function of channel switching device 4 in many ways according to prior art and common practise, and to this, this paper repeats no more.
According to the content of above being put down in writing, those skilled in the art will appreciate that the temperature difference △ T of above-mentioned first temperature T 1 and second temperature T 2 is significant for the realization of the technology of the present invention effect.Therefore, can further set above-mentioned temperature difference △ T.The actual process process of binding plasma treatment facility, the scope of above-mentioned temperature difference △ T can be set in 20 ℃ to 30 ℃, temperature difference △ T speed of balance heating process process and temperature reduction technology process reasonably in this scope helps improving on the whole the operating efficiency and the processing quality of apparatus for processing plasma.
Further, the scope of above-mentioned first temperature T 1 can be made as 0 ℃ to 30 ℃, the scope with above-mentioned second temperature T 2 is made as 20 ℃ to 50 ℃ simultaneously.The concrete scope of above-mentioned first temperature T 1, second temperature T 2 can satisfy the requirement of ascending, descending electrostatic chuck 1 temperature in most of processing steps, thereby further improves the operating efficiency and the processing quality of apparatus for processing plasma.
Please refer to Fig. 2, Fig. 2 is the structural representation of second kind of embodiment of electrostatic chuck apparatus provided by the present invention.
Can on the basis of embodiment shown in Figure 1, improve for electrostatic chuck apparatus provided by the present invention.Can preestablish the switching condition of channel switching device 4, and detect relevant parameters and the detected value of relevant parameter is passed to controller 5 by transducer 6 is set, controller 5 judges according to predetermined strategy whether above-mentioned switching condition is achieved, and controller 5 sends switching command to channel switching device 4 when above-mentioned switching condition is achieved.Like this, the reaction speed of electrostatic chuck apparatus provided by the present invention will be faster, help further improving the operating efficiency and the processing quality of apparatus for processing plasma.
Please refer to Fig. 3, Fig. 3 is the structural representation of three kinds of embodiments of electrostatic chuck apparatus provided by the present invention.
Can replace above-mentioned first cooler 31 and second cooler 32 with binary channels cooler 33, binary channels cooler 33 has first cooling duct 21 and second cooling duct 22 equally, can between first cooling duct 21 and second cooling duct 22, switch by channel switching device 4 so that both one of be communicated with the 3rd cooling duct 23; The 3rd cooling duct 23 directly is communicated with the coolant cavity in electrostatic chuck 1 matrix.Can simplify like this electrostatic chuck apparatus structure, save its cost.
In addition, controller 5 can make heater 7 and coolant can coordinate to play a role according to detected relevant parameter and predetermined policy control heater 7.
Please refer to Fig. 4, Fig. 4 is the structural representation of four kinds of embodiments of electrostatic chuck apparatus provided by the present invention.
Fig. 1 coolant cavity in electrostatic chuck 1 matrix to the embodiment shown in Figure 3 all connects two cooling ducts (first cooling duct 21 and second cooling duct 22); Can further increase by at least one additional cooling duct 23 on this basis, and the additional cooler 33 that is connected with additional cooling duct 23; The temperature of coolant is all inequality in each additional cooling duct 23, and with first cooling duct 21 and second cooling duct 22 in the temperature of coolant also inequality.Additional cooling duct 23 is one in the concrete enforcement shown in Figure 4, and additional cooler 33 is one.
Setting up additional cooling duct 23 can provide more temperature to select for different process process and different process step, temperature control to electrostatic chuck 1 will be more pointed, thereby reaction speed will be faster also, help further improving the operating efficiency and the processing quality of apparatus for processing plasma.
Apparatus for processing plasma provided by the present invention comprises above-mentioned each described electrostatic chuck apparatus, and the structure of described other parts of apparatus for processing plasma can be with reference to prior art, and this paper repeats no more.The temperature-controlled process of electrostatic chuck provided by the present invention improves the temperature of electrostatic chuck 1, reduces the temperature of electrostatic chuck 1 by the coolant in the coolant cavity by heater; In the different process step, pass through different cooling duct different coolants of input temp in described coolant cavity: when electrostatic chuck 1 needs to heat up, by first cooling duct 21 higher coolant of input temp in described coolant cavity, so that basic heat is provided, shortens the heating-up time and reduces the power of heater 7 to electrostatic chuck 1; When electrostatic chuck 1 needs cooling,,, and then shortened technical process with the bigger cooling gradient of formation, raising heat exchanger effectiveness by second cooling duct 22 lower coolant of input temp in described coolant cavity.Therefore, the bright temperature-controlled process that provides of this law can significantly improve the production efficiency of apparatus for processing plasma, and improves processing quality.
Can select different cooling ducts to be connected by channel switching device 4, thereby in described coolant cavity, import the coolant of different temperatures with described coolant cavity.The bar number of described cooling duct can be two or many, promptly can set up at least one additional cooling duct 23 outside first cooling duct 21 and second cooling duct 22.
When described cooling duct is provided with two (first cooling duct 21 and second cooling duct 22), the temperature range of coolant is can be 20 ℃ to 30 ℃ among both, with the speed of balance heating process process and temperature reduction technology process reasonably, help improving on the whole the operating efficiency and the processing quality of apparatus for processing plasma.
In addition, the temperature range of coolant can be 0 ℃ to 30 ℃ in described first cooling duct, and the temperature range of the coolant in described second cooling duct can be 20 ℃ to 50 ℃.The requirement of ascending, descending electrostatic chuck 1 temperature in most of processing steps be can satisfy like this, thereby the operating efficiency and the processing quality of apparatus for processing plasma further improved.
Can preestablish the switching condition of described channel switching device 4, and detect relevant parameters and the detected value of relevant parameter is passed to controller 5 by transducer 6 is set, controller 5 judges according to predetermined strategy whether above-mentioned switching condition is achieved, and controller 5 sends switching command to channel switching device 4 when above-mentioned switching condition is achieved; Like this, the reaction speed of electrostatic chuck apparatus provided by the present invention will be faster, the operating efficiency of apparatus for processing plasma and processing quality.
The temperature-controlled process of electrostatic chuck provided by the present invention can be used for the processing of various common workpieces such as wafer.
Can be with reference to accompanying drawing 1 to accompanying drawing 4 and above about the description of electrostatic chuck apparatus, so that understand the temperature-controlled process of electrostatic chuck provided by the present invention more accurately.
More than the temperature-controlled process of electrostatic chuck apparatus provided by the present invention and electrostatic chuck is described in detail.Used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (11)
1. electrostatic chuck apparatus, has the coolant cavity among the matrix of its electrostatic chuck, it is characterized in that, further comprise first cooling duct, second cooling duct of coolant and the channel switching device of selecting one of described first cooling duct and described second cooling duct to be connected with described coolant cavity can be provided to described coolant cavity; There is the temperature difference in coolant in described first cooling duct, described second cooling duct.
2. electrostatic chuck apparatus as claimed in claim 1 is characterized in that, the temperature range of coolant is 20 ℃ to 30 ℃ in described first cooling duct, described second cooling duct.
3. electrostatic chuck apparatus as claimed in claim 2 is characterized in that, the temperature range of coolant is 0 ℃ to 30 ℃ in described first cooling duct, and the temperature range of the coolant in described second cooling duct is 20 ℃ to 50 ℃.
4. electrostatic chuck apparatus as claimed in claim 1 is characterized in that, further comprises at least one additional cooling duct, and the temperature of coolant is all inequality in described first cooling duct, described second cooling duct and each the described additional cooling duct; Described channel switching device selects one in described first cooling duct, described second cooling duct and each the described additional cooling duct to be connected with described medium cavity.
5. electrostatic chuck apparatus as claimed in claim 1 is characterized in that, further comprises controller, and described controller selects different cooling ducts to be connected with described coolant cavity by described channel switching device during the predetermined condition achievement.
6. an apparatus for processing plasma is characterized in that, comprises as each described electrostatic chuck apparatus of claim 1 to 5.
7. the temperature-controlled process of an electrostatic chuck, improve the temperature of described electrostatic chuck by heater, and the temperature of regulating described electrostatic chuck by the coolant in the coolant cavity, it is characterized in that, described coolant cavity is communicated with at least two cooling ducts, and the temperature of coolant is all inequality in each cooling duct; When need heating up in described coolant cavity the higher coolant of input temp, when needing cooling in described coolant cavity the lower coolant of input temp.
8. the temperature-controlled process of electrostatic chuck as claimed in claim 7 is characterized in that, selects different cooling ducts to be connected with described coolant cavity by channel switching device, thereby imports the coolant of different temperatures to described coolant cavity.
9. the temperature-controlled process of electrostatic chuck as claimed in claim 8 is characterized in that, described cooling duct has two, i.e. first cooling duct and second cooling duct, and the temperature range of coolant is 20 ℃ to 30 ℃ among both.
10. the temperature-controlled process of electrostatic chuck as claimed in claim 9 is characterized in that, the temperature range of coolant is 0 ℃ to 30 ℃ in described first cooling duct, and the temperature range of the coolant in described second cooling duct is 20 ℃ to 50 ℃.
11. the temperature-controlled process of electrostatic chuck as claimed in claim 8 is characterized in that, the switching of described channel switching device is finished when predetermined condition is achieved by controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810224801 CN101373731B (en) | 2008-10-21 | 2008-10-21 | Electrostatic chuck apparatus and temperature control method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810224801 CN101373731B (en) | 2008-10-21 | 2008-10-21 | Electrostatic chuck apparatus and temperature control method thereof |
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| CN101373731A true CN101373731A (en) | 2009-02-25 |
| CN101373731B CN101373731B (en) | 2013-02-27 |
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| CN 200810224801 Active CN101373731B (en) | 2008-10-21 | 2008-10-21 | Electrostatic chuck apparatus and temperature control method thereof |
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| CN101866826A (en) * | 2010-04-29 | 2010-10-20 | 中微半导体设备(上海)有限公司 | Fluid conveying device for vacuum processing system |
| CN102041487A (en) * | 2009-10-14 | 2011-05-04 | 东京毅力科创株式会社 | Temperature control system and temperature control method for substrate mounting table |
| CN103794527A (en) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Static chuck heating method and static chuck heating system |
| CN110544663A (en) * | 2018-10-31 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Circulating liquid system of electrostatic adsorption chuck |
| CN111785674A (en) * | 2020-07-15 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment |
| CN112212552A (en) * | 2020-09-04 | 2021-01-12 | 珠海格力电器股份有限公司 | Cooling method, cooling device, computer readable medium and electronic device |
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| CN113354259A (en) * | 2021-06-21 | 2021-09-07 | 中国原子能科学研究院 | Discharging method, discharging device and cold crucible melting device |
| CN113432378A (en) * | 2021-06-16 | 2021-09-24 | 长江存储科技有限责任公司 | Cooling system |
| CN114675687A (en) * | 2022-04-01 | 2022-06-28 | 北京北方华创微电子装备有限公司 | Temperature control method of electrostatic chuck and semiconductor process equipment |
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| JP4551256B2 (en) * | 2005-03-31 | 2010-09-22 | 東京エレクトロン株式会社 | Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program |
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- 2008-10-21 CN CN 200810224801 patent/CN101373731B/en active Active
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| CN102041487A (en) * | 2009-10-14 | 2011-05-04 | 东京毅力科创株式会社 | Temperature control system and temperature control method for substrate mounting table |
| CN104120409A (en) * | 2009-10-14 | 2014-10-29 | 东京毅力科创株式会社 | Temperature control system and temperature control method for substrate mounting table |
| US8950469B2 (en) | 2009-10-14 | 2015-02-10 | Tokyo Electron Limited | Temperature control system and temperature control method for substrate mounting table |
| CN101866826B (en) * | 2010-04-29 | 2012-04-11 | 中微半导体设备(上海)有限公司 | Fluid conveying device for vacuum processing system |
| CN101866826A (en) * | 2010-04-29 | 2010-10-20 | 中微半导体设备(上海)有限公司 | Fluid conveying device for vacuum processing system |
| CN103794527A (en) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Static chuck heating method and static chuck heating system |
| CN103794527B (en) * | 2012-10-30 | 2016-08-24 | 中微半导体设备(上海)有限公司 | Electrostatic chuck heating means |
| CN110544663A (en) * | 2018-10-31 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Circulating liquid system of electrostatic adsorption chuck |
| CN112951695A (en) * | 2019-11-26 | 2021-06-11 | 中微半导体设备(上海)股份有限公司 | Cooling tube assembly with static electricity releasing function, cooling device and plasma processing equipment |
| CN112951695B (en) * | 2019-11-26 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Cooling tube assembly, cooling device and plasma processing equipment |
| CN111785674A (en) * | 2020-07-15 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment |
| CN111785674B (en) * | 2020-07-15 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment |
| CN112212552A (en) * | 2020-09-04 | 2021-01-12 | 珠海格力电器股份有限公司 | Cooling method, cooling device, computer readable medium and electronic device |
| CN113432378A (en) * | 2021-06-16 | 2021-09-24 | 长江存储科技有限责任公司 | Cooling system |
| CN113354259A (en) * | 2021-06-21 | 2021-09-07 | 中国原子能科学研究院 | Discharging method, discharging device and cold crucible melting device |
| CN114675687A (en) * | 2022-04-01 | 2022-06-28 | 北京北方华创微电子装备有限公司 | Temperature control method of electrostatic chuck and semiconductor process equipment |
| CN114675687B (en) * | 2022-04-01 | 2023-02-14 | 北京北方华创微电子装备有限公司 | Temperature control method of electrostatic chuck and semiconductor process equipment |
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| CN101373731B (en) | 2013-02-27 |
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Address after: No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone, 100176 Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |