CN101370330A - Organic opto-electronic device with organic protection layer and preparation method thereof - Google Patents
Organic opto-electronic device with organic protection layer and preparation method thereof Download PDFInfo
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- CN101370330A CN101370330A CNA2008100461712A CN200810046171A CN101370330A CN 101370330 A CN101370330 A CN 101370330A CN A2008100461712 A CNA2008100461712 A CN A2008100461712A CN 200810046171 A CN200810046171 A CN 200810046171A CN 101370330 A CN101370330 A CN 101370330A
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Abstract
The invention discloses an organic opto-electronic device comprising substrate, organic opto-electronic device and organic protection layer. It is characterized in that organic protection layer is composed of n composition layer, n being integer and n=1-100;the composition layer is composed of a first organic material layer/ a second organic material layer/ a third organic material layer or the first organic material layer/ the second organic material layer or the second organic material layer/ the third organic material layer; organic protection layer can lies in upper layer, lower layer, one or several location of periphery for organic opto-electronic device or between substrate and organic opto-electronic device or aside of the substrate. The inventive device overcomes defect of existing technology, largely reduces organic opto-electronic device cost, reduces process requirements for organic opto-electronic device industrialization, promotes organic opto-electronic device performance.
Description
Technical field
The present invention relates to the organic optoelectronic technical field, be specifically related to a kind of organic optoelectronic device and preparation method thereof with organic protection layer.
Background technology
Organic optoelectronic more and more causes people's attention as the important directions of development in science and technology, especially the organic optoelectronic The Application of Technology also more and more widely, various types of opto-electronic devices are played the part of very important role in the every field that concerns national economy.
The organic optoelectronic technology is mainly reflected in aspects such as organic electroluminescence device, OTFT and organic solar batteries.Be accompanied by the application of these organic optoelectronic devices, the stability and the life-span of device more and more come into one's own.
Instability for the aging and performance that prevents organic optoelectronic device, usually to adopt packaging technology to device, the encapsulating material that adopts is as described below at present, one class encapsulation technology commonly used is in the inert gas environment of drying, use an encapsulation cover plate and device substrate bonding fixing, with device package in formed cavity, thereby realize being isolated of water and oxygen in device and the outside air, can in package cavity, add simultaneously to be used to remove and mix the oxygen that encapsulates in the cavity or the drying material of moisture.One class is to use the macromolecule cap that scribbles barrier layer on the flexomer plastic base, uses ultra-violet curing glue (UV glue) bonding, can further reduce thickness and quality, also can keep flexible; And the compactness of macromolecule encapsulated layer and oxidation resistance also require further improvement far away from metal and glass.But adopt these class methods can simplify preparation technology greatly and reduce production costs, therefore, thin-film package becomes the trend of bendable musical form flexible electronic device encapsulated layer development gradually.
In addition, being extensive use of of organic functional material effectively improves the encapsulation performance of film, and reduces the production cost of encapsulation, is convenient to make flexible device; Device is ultra-thin, and volume is little, and is in light weight, and the preparation method is rationally simple, easy operating.This technology has crucial meaning to the manufacture craft and the market competitiveness of organic optoelectronic device.
Summary of the invention
Technical problem to be solved by this invention is how a kind of organic optoelectronic device with organic protection layer and preparation method thereof is provided; purpose is to overcome existing defective in the prior art; significantly reduced the cost of organic optoelectronic device; be the industrialization reduction technological requirement and the cost of organic optoelectronic device, improved the performance of organic optoelectronic device.
Technical problem proposed by the invention is to solve like this: construct a kind of organic optoelectronic device with organic protection layer, comprise substrate, organic optoelectronic device and organic protection layer, it is characterized in that, organic protection layer is made of n combination layer, n is integer and n=1～100, and described combination layer is combined by first organic material layer, second organic material layer/the 3rd organic material layer or first organic material layer/second organic material layer or second organic material layer/the 3rd organic material layer; The position of combination layer relation comprises in the organic protection layer: the upper strata, lower floor, a place all around or a few place that are arranged on organic optoelectronic device; Be arranged between substrate and the organic optoelectronic device or be arranged on a side of substrate.
According to the organic optoelectronic device with organic protection layer provided by the present invention; it is characterized in that the second organic material layer Shi perylene perylene in the described combination layer; fluorinated polymer (fluorinated polymers); parylene (parylenes); polyacrylate (polyacrylates); polyimides (PI); PETG (PET); polybutylene terephthalate (PBT) (PBT); poly-to (ethylene naphthalate) (PEN); Merlon (PC); polyamide (PA); polysulfones (PSO); transparent polyvinyl chloride (PVC); polyvinylidene fluoride (PVDT); ethene one acetate ethylene copolymer (EVA); ethylene-vinyl alcohol copolymer (EVAL); polyacrylonitrile (PAN); polypropylene (PP); polyethylene (PE); polyvinyl acetate (PVAc) and polysiloxane-based (PI); in polymethyl methacrylate and the polyethyl methacrylate one or several.
According to the organic optoelectronic device with organic protection layer provided by the present invention; it is characterized in that; first organic material layer in the described combination layer and the 3rd organic material layer are ultra-violet curing glue, and described ultra-violet curing glue comprises free radical type ultraviolet photo-curing cementing agent, cation type ultraviolet photo-curing cementing agent and both mixed systems.
According to the organic optoelectronic device with organic protection layer provided by the present invention, it is characterized in that described free radical type ultraviolet photo-curing cementing agent comprises base resin, monomer, light trigger and sensitising agent and auxiliary agent.
According to the organic optoelectronic device with organic protection layer provided by the present invention, it is characterized in that base resin comprises unsaturated polyester resin, acrylic resin and polythiol-polyenoid system.
According to the organic optoelectronic device with organic protection layer provided by the present invention, it is characterized in that described unsaturated polyester resin is to mix the linear polyesters that reacts and make with fractional saturation binary acid (or acid anhydrides) and dihydroxylic alcohols by undersaturated binary acid or acid anhydrides under action of evocating; Described acrylic resin comprises polyester-acrylate, epoxy-acrylate, carbamate-acrylate and polyethers-acrylate; Described polythiol-polyenoid system comprises following four kinds of materials:
According to the organic optoelectronic device with organic protection layer provided by the present invention, it is characterized in that monomer comprises styrene and derivative, simple function group or polyfunctional group (methyl) acrylate thereof; Light trigger comprises styrax and derivative benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and acetophenone derivative, sensitising agent comprises benzophenone, thia anthraquinone and Michler's keton, auxiliary agent comprises plasticizer, thixotropic agent, filler, antistatic agent, fire retardant, coupling agent, and light trigger comprises diaryl group iodized salt, triaryl salt compounded of iodine, triaryl sulfonium salts and triaryl selenium salt.
According to the organic optoelectronic device with organic protection layer provided by the present invention; it is characterized in that; the organic material layer material of the second organic material layer both sides adopts same material or different materials, and the second organic material layer material that is in the various combination layer adopts same material or different materials.
A kind of preparation method with organic optoelectronic device of organic protection layer is characterized in that, may further comprise the steps:
1, in upper strata, the lower floor of organic optoelectronic device or prepare first organic material layer all around;
2, preparation second organic material layer on above-mentioned first organic material layer;
3, deposition the 3rd organic material layer on above-mentioned second organic material layer;
4, repeat above-mentioned steps 1,2,3 or repeating step 1,2, the combination layer in preparation (n-1) cycle replaces the thin layer of overlapping composition again.(the device outermost layer is first organic material layer or the 3rd organic material layer).
According to the preparation method with organic optoelectronic device of organic protection layer provided by the present invention; it is characterized in that organic material layer is by vacuum evaporation; ion cluster bundle deposition; ion plating; dc sputtering deposition; the RF sputter coating; ion beam sputtering deposition; ion beam assisted depositing; (wherein the plasma generator in the plasma reinforced chemical vapour deposition is a radio-frequency drive to plasma reinforced chemical vapour deposition; direct-current discharge; a kind of in microwave plasma and the electron cyclotron resonace); high density inductance coupling high formula plasma source chemical vapor deposition (HD-ICP-CVD); catalyst chemical vapour deposition (CVD) (Cat-CVD); magnetron sputtering; electroplate; spin coating; dip-coating; inkjet printing; one or several modes in roller coat and the LB film form.
Organic optoelectronic device with organic protection layer provided by the present invention, novel structure has improved the evenness of substrate polymers film surface, has improved its surface property; Organic protection layer is carried out suitable cured, make it form compact texture, can more effectively intercept water oxygen and enter device inside, improve the performance and the life-span of device; Adopt the preparation method who provides among the present invention can effectively improve the encapsulation performance of film, and reduce the production cost of encapsulation, can be made into flexible device; Device is ultra-thin, and volume is little, and is in light weight, and the preparation method is rationally simple, easy operating; This technology is significant to the manufacture craft of organic optoelectronic device.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the organic optoelectronic device with organic protection layer provided by the present invention.
Fig. 2 is the structural representation of a kind of embodiment of the organic optoelectronic device with organic protection layer provided by the present invention.
Fig. 3 is the structural representation of a kind of embodiment of the organic optoelectronic device with organic protection layer provided by the present invention.
Fig. 4 is the structural representation of a kind of embodiment of the organic optoelectronic device with organic protection layer provided by the present invention.
Wherein, 1, substrate, 2, organic optoelectronic device, 31, first organic material layer, 32, first organic material layer, 33, first organic material layer, 41, second organic material layer, 42, second organic material layer, 43, second organic material layer, 51, the 3rd organic material layer, 52, the 3rd organic material layer, the 53, the 3rd organic material layer, 61, combination layer (constituting) by 31,41 and 51,62, combination layer (constituting) by 32,42 and 52,63, combination layer (constituting) by 33,43 and 53.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Technical scheme of the present invention provides a kind of protective layer of organic optoelectronic device; as shown in Figure 1, 2, 3; the structure of device comprises substrate 1, organic optoelectronic device 2, the first organic material layers 31,32 and 33; second organic material layer 41,42 and 43; the 3rd organic material layer 51,52 and 53, by organic material layer 31,32 and 33, organic material layer 41,42 and 43; the combination that organic material layer 51,52 and 53 is formed respectively layer by layer 61,62 and 63, the Several combination layer constitutes organic protection layer.
Organic optoelectronic device 2 is organic electroluminescence device, OTFT and organic solar batteries among the present invention.
Second organic material layer 41 among the present invention, 42 and 43 is perylene, fluorinated polymer (fluorinatedpolymers), parylene (parylenes), cyclotene, polyacrylate (polyacrylates), polyimides (PI), PETG (PET), polybutylene terephthalate (PBT) (PBT), poly-to (ethylene naphthalate) (PEN), Merlon (PC), polyamide (PA), polysulfones (PSO), transparent polyvinyl chloride (PVC), polyvinylidene fluoride (PVDT), ethene one acetate ethylene copolymer (EVA), ethylene-vinyl alcohol copolymer (EVAL), polyacrylonitrile (PAN), polypropylene (PP), polyethylene (PE), polyvinyl acetate (PVAc) and polysiloxane-based (PI), polymethyl methacrylate, in the polyethyl methacrylate one or several.
First organic material layer 31,32 and 33 among the present invention, the 3rd organic material layer 51,52 and 53 is one or several of following ultra-violet curing adhesive, the free radical type ultraviolet photo-curing cementing agent comprises base resin, monomer, light trigger and sensitising agent and auxiliary agent, base resin comprises unsaturated polyester resin, acrylic resin and polythiol-polyenoid system, acrylic resin comprises polyester-acrylate, epoxy-acrylate, carbamate-acrylate and polyethers-acrylate, polythiol-polyenoid system comprises:
Polynary allylic compound commonly used has CH
2=CHCH
2O (CH
2CH
2CH
2O)
nCH
2CH=CH
2, cyanacrylate
HS (CH
2CH
2O)
2CH
2CH
2One or more of SH, monomer comprises styrene and derivative, simple function group or polyfunctional group (methyl) acrylate thereof, as methyl methacrylate, ethyl acrylate, acrylic acid propylene glycol ester, n-butyl acrylate, light trigger comprises styrax and derivative benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and acetophenone derivative, sensitising agent has benzophenone, thia anthraquinone and Michler's keton, auxiliary agent comprises plasticizer, thixotropic agent, filler, antistatic agent, fire retardant, coupling agent, as silicone couplet CH
2=CHSi (OCH
2CH
2OCH
3)
3Cation type ultraviolet photo-curing cementing agent comprises monomer, as various epoxy resin or modified epoxy or fluorine-containing and not fluorine-containing hybrid resin or aliphat and bis-phenol D-type blending epoxy, various active epoxy diluent resins and various cyclic ethers, cyclic lactone, vinyl ether monomers are as the diluent of light-cured resin, and cation light initiator has diaryl group iodized salt, triaryl salt compounded of iodine, triaryl sulfonium salts, triaryl selenium salt; Their mixed system comprises the mixing of free radical type and cationic ultra-violet curing glue, as benzhydryl iodine hexafluorophosphate (DPI.PF
6) make light trigger, cause bisphenol A epoxide resin E
51Hybrid resin with acrylic ester prepolymer AE.
Adopt the OLED device architecture of the present invention's preparation to be exemplified below:
Substrate/organic electroluminescence device/organic protection layer
Organic protection layer/substrate/organic electroluminescence device
Substrate/organic protection layer/organic electroluminescence device
Organic protection layer/substrate/organic electroluminescence device/organic protection layer
Organic protection layer/substrate/organic protection layer/organic electroluminescence device
Substrate/organic protection layer/organic electroluminescence device/organic protection layer
Organic protection layer/substrate/organic protection layer/organic electroluminescence device/organic protection layer
Substrate/OTFT/organic protection layer
Organic protection layer/substrate/OTFT
Substrate/organic protection layer/OTFT
Organic protection layer/substrate/OTFT/organic protection layer
Organic protection layer/substrate/organic protection layer/OTFT
Substrate/organic protection layer/OTFT/organic protection layer
Organic protection layer/substrate/organic protection layer/OTFT/organic protection layer
Substrate/organic solar batteries/organic protection layer
Organic protection layer/substrate/organic solar batteries
Substrate/organic protection layer/organic solar batteries
Organic protection layer/substrate/organic solar batteries/organic protection layer
Organic protection layer/substrate/organic protection layer/organic solar batteries
Substrate/organic protection layer/organic solar batteries/organic protection layer
Organic protection layer/substrate/organic protection layer/organic solar batteries/organic protection layer
Below be specific embodiments of the invention:
As shown in Figure 1, the substrate 1 in the structure of device, organic optoelectronic device 2, the first organic material layers 31, the second organic material layers 41, the three organic material layers 51, combination layer 61.
The substrate 1 of device is PET, and organic optoelectronic device 2 is an organic electroluminescence device, and first organic material layer 31 is a UV glue, and second organic material layer 41 is perylene, and the 3rd organic material layer 51 is a UV glue.
The preparation method is as follows:
1. prepare the first organic material layer UV glue 300nm on the upper strata of organic electroluminescence device;
2. evaporation or the spin coating second organic material layer perylene300nm on above-mentioned organic material layer UV glue;
3. on above-mentioned organic material layer perylene, deposit the 3rd organic material layer UV glue 300nm;
1.～3. or 1., 2. 4. repeat above-mentioned steps, the combination layer in preparation (n-1) cycle replaces the thin layer (be organic protection layer, the device outermost layer is first organic material layer or the 3rd organic material layer) of overlapping composition again;
As shown in Figure 2, the substrate 1 in the structure of device, organic optoelectronic device 2, the first organic material layers 32, the second organic material layers 42, the three organic material layers 52, combination layer 62.
The substrate 1 of device is PET, and organic optoelectronic device 2 is an organic electroluminescence device, and first organic material layer 32 is a UV glue, and second organic material layer 42 is perylene, and the 3rd organic material layer 52 is a UV glue.
The preparation of devices flow process is as follows:
1. prepare the first organic material layer UV glue 300nm on the upper strata of substrate;
2. on above-mentioned organic material layer UV glue, prepare the second organic material layer perylene300nm;
3. on above-mentioned organic material layer perylene, deposit the 3rd organic material layer UV glue 300nm;
4. repeat above-mentioned steps 1.～3., the combination layer in preparation (n-1) cycle replaces the thin layer of overlapping composition again;
5. on above-mentioned thin layer, prepare organic electroluminescence device.
Embodiment 3
As shown in Figure 3, the substrate 1 in the structure of device, organic optoelectronic device 2, the first organic material layers 33, the second organic material layers 43, the three organic material layers 53, combination layer 63.
The substrate 1 of device is PET, and organic optoelectronic device 2 is an OTFT, and first organic material layer 33 is a UV glue, and second organic material layer 43 is perylene, and the 3rd organic material layer 53 is a UV glue.
The preparation of devices flow process is similar to embodiment 2.
Embodiment 4
As shown in Figure 4, the substrate 1 in the structure of device, organic optoelectronic device 2, first organic material layer, 31, the second organic material layers, 41, the three organic material layers 51, combination layer 61, the first organic material layers 32, the second organic material layers 42, the 3rd organic material layer 52, combination layer 62, the first organic material layers 33, the second organic material layers 43, the 3rd organic material layer 53, combination layer 63.
The substrate 1 of device is PET, organic optoelectronic device 2 is an organic solar batteries, first organic material layer 31 is a UV glue, and second organic material layer 41 is perylene, and the 3rd organic material layer 51 is a UV glue, first organic material layer 32 is a UV glue, second organic material layer 42 is perylene, and the 3rd organic material layer 52 is a UV glue, and first organic material layer 33 is a UV glue, second organic material layer 43 is perylene, and the 3rd organic material layer 53 is a UV glue.
The preparation of devices flow process is similar with 2 to embodiment 1.
Claims (10)
1. organic optoelectronic device with organic protection layer, comprise substrate, organic optoelectronic device and organic protection layer, it is characterized in that, organic protection layer is made of n combination layer, n is integer and n=1～100, and described combination layer is combined by first organic material layer/second organic material layer/the 3rd organic material layer or first organic material layer/second organic material layer or second organic material layer/the 3rd organic material layer; The position of combination layer relation comprises in the organic protection layer: the upper strata, lower floor, a place all around or a few place that are arranged on organic optoelectronic device; Be arranged between substrate and the organic optoelectronic device or be arranged on a side of substrate.
2. the organic optoelectronic device with organic protection layer according to claim 1; it is characterized in that the second organic material layer Shi perylene in the described combination layer; fluorinated polymer; parylene; polyacrylate; polyimides; PETG; polybutylene terephthalate (PBT); poly-to (ethylene naphthalate); Merlon; polyamide; polysulfones; transparent polyvinyl chloride; polyvinylidene fluoride; ethene one acetate ethylene copolymer; ethylene-vinyl alcohol copolymer; polyacrylonitrile; polypropylene; polyethylene; polyvinyl acetate and polysiloxane-based; in polymethyl methacrylate and the polyethyl methacrylate one or several.
3. to remove 1 described organic optoelectronic device according to right with organizational security sheath; it is characterized in that; first organic material layer in the described combination layer and the 3rd organic material layer are ultra-violet curing glue, and described ultra-violet curing glue comprises free radical type ultraviolet photo-curing cementing agent, cation type ultraviolet photo-curing cementing agent and both mixed systems.
4. the organic optoelectronic device with organic protection layer according to claim 3 is characterized in that, described free radical type ultraviolet photo-curing cementing agent comprises base resin, monomer, light trigger and sensitising agent and auxiliary agent.
5. the organic optoelectronic device with organic protection layer according to claim 4 is characterized in that, base resin comprises unsaturated polyester resin, acrylic resin and polythiol-polyenoid system.
6. the organic optoelectronic device with organic protection layer according to claim 5, it is characterized in that described unsaturated polyester resin is to mix the linear polyesters that reacts and make with fractional saturation binary acid and dihydroxylic alcohols by undersaturated binary acid or acid anhydrides under action of evocating; Described acrylic resin comprises polyester-acrylate, epoxy-acrylate, carbamate-acrylate and polyethers-acrylate; Described polythiol-polyenoid system comprises following four kinds of materials:
7. the organic optoelectronic device with organic protection layer according to claim 4 is characterized in that, monomer comprises styrene and derivative, simple function group or multi-functional acrylate; Light trigger comprises styrax and derivative benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether and acetophenone derivative, sensitising agent comprises benzophenone, thia anthraquinone and Michler's keton, auxiliary agent comprises plasticizer, thixotropic agent, filler, antistatic agent, fire retardant, coupling agent, and light trigger comprises diaryl group iodized salt, triaryl salt compounded of iodine, triaryl sulfonium salts and triaryl selenium salt.
8. according to the described organic optoelectronic device of claim 1 with organic protection layer; it is characterized in that; the organic material layer material of the second organic material layer both sides adopts same material or different materials, and the second organic material layer material that is in the various combination layer adopts same material or different materials.
9. the preparation method with organic optoelectronic device of organic protection layer is characterized in that, may further comprise the steps:
1. in upper strata, the lower floor of organic optoelectronic device or prepare first organic material layer all around;
2. on above-mentioned first organic material layer, prepare second organic material layer;
3. on above-mentioned second organic material layer, deposit the 3rd organic material layer;
4. repeat above-mentioned steps 1., 2., 3. or repeating step 1., 2., the combination layer in preparation (n-1) cycle replaces the thin layer of overlapping composition again.
10. according to the preparation method with organic optoelectronic device of organic protection layer provided by the present invention; it is characterized in that organic material layer is to form by one or several modes in vacuum evaporation, ion cluster bundle deposition, ion plating, dc sputtering deposition, RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, catalyst chemical vapour deposition (CVD), magnetron sputtering, plating, spin coating, dip-coating, inkjet printing, roller coat and the LB film.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742431A (en) * | 2016-04-19 | 2016-07-06 | Tcl集团股份有限公司 | Quantum-dot light emitting diode (QLED) package structure and OLED package method |
| CN106654039A (en) * | 2016-09-27 | 2017-05-10 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100249784B1 (en) * | 1997-11-20 | 2000-04-01 | 정선종 | Encapsulation of the polymeric or organic light light emitting device using multiple polymer layers |
| CN1176565C (en) * | 2002-11-25 | 2004-11-17 | 清华大学 | Package layer for organic electroluminescent device and its prepn method and application |
| US20070020451A1 (en) * | 2005-07-20 | 2007-01-25 | 3M Innovative Properties Company | Moisture barrier coatings |
| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742431A (en) * | 2016-04-19 | 2016-07-06 | Tcl集团股份有限公司 | Quantum-dot light emitting diode (QLED) package structure and OLED package method |
| CN106654039A (en) * | 2016-09-27 | 2017-05-10 | 上海天马微电子有限公司 | Display panel, display device and manufacturing method of display panel |
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| CN101370330B (en) | 2010-06-02 |
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