CN101369591B - Image sensing element packaging body and preparation thereof - Google Patents
Image sensing element packaging body and preparation thereof Download PDFInfo
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- CN101369591B CN101369591B CN2007101416512A CN200710141651A CN101369591B CN 101369591 B CN101369591 B CN 101369591B CN 2007101416512 A CN2007101416512 A CN 2007101416512A CN 200710141651 A CN200710141651 A CN 200710141651A CN 101369591 B CN101369591 B CN 101369591B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
The invention provides an image sensing element package and a manufacturing method thereof. The image sensing element package comprises: a substrate above which an image sensing element connected with a metal layer electrically is formed; a plurality of groove insulating layers formed in the substrate and enclosing a part of substrate; a through hole formed in the substrate within an isolation area and connected the metal layer electrically; and a solder ball connected with the image sensing element electrically through the through hole. In the image sensing element package, because the solder ball can be connected with the image sensing element electrically through the through hole formed within the isolation area, the signal of the image sensing element can be transmitted to the outside through the metal layer and the through hole, without passing by the outside of the substrate forming the image sensing element. Therefore, the signal transmission pathway of the image sensing element can be shortened. Moreover, the substrate is processed by a thinning step, so the thickness of the substrate can be reduced. Therefore, the size of the image sensing element can be also reduced.
Description
Technical field
The present invention relates to the packaging body of Image Sensor, packaging body of particularly a kind of Image Sensor with trench dielectric layer (trenchisolation) and preparation method thereof.
Background technology
Photosensitive measuring integrated circuit (sensor integrated circuit) is being played the part of important role in gathering the Photosensing Units of image, these integrated circuit components all have been widely used in for example digital camera (digital camera), digital Video Camera (digital video recorder)) and mobile phone consumer electronics devices such as (mobilephone) and portable electronic apparatus in.Along with above-mentioned various electronic installations and portable electronic equipment are more and more popularized and light and handyization, make the also more and more downsizing of size of image sensing element packaging body.
Fig. 1 shows a kind of profile of image sensing element packaging body 1 of prior art.Shown in Figure 1, provide substrate 2, and these substrate 2 tops are formed with the bond pad 6 of Image Sensor 4 and extension.Then, cover plate 8 is set above above-mentioned substrate 2.And for example shown in Figure 1, above-mentioned substrate 2 is attached on the loading plate 14.Afterwards, above the back side of loading plate 14, form conductive layer 10, and make conductive layer 10 extend the sidewall top of loading plate 14, to electrically connect above-mentioned extension bond pad 6 and scolder spheroid 12.Because above-mentioned substrate 2 and loading plate 14 all have set thickness, so image sensing element packaging body has bigger thickness and size.In addition, in the image sensing element packaging body of prior art, because conductive layer 10 is arranged at the perimeter near image sensing element packaging body, so conductive layer 10 is in manufacturing process, for example in cutting step, be easy to be damaged, thereby cause image sensing element packaging body to lose efficacy.
Therefore, need a kind of image sensing element packaging body that addresses the above problem and preparation method thereof badly.
Summary of the invention
In view of this, first purpose of the present invention provides a kind of image sensing element packaging body.Above-mentioned image sensing element packaging body comprises the substrate that the top is formed with Image Sensor and metal level.And in this substrate, be formed with the via that electrically connects above-mentioned metal level.In addition, among the substrate below the above-mentioned metal level of correspondence, form trench dielectric layer, and trench dielectric layer is around above-mentioned via.On the back side of above-mentioned substrate, form the scolder spheroid, and the scolder spheroid electrically connects Image Sensor.Above-mentioned Image Sensor also comprises cover plate, and it is arranged at the top of above-mentioned substrate.
Second purpose of the present invention provides a kind of image sensing element packaging body.This image sensing element packaging body comprises the substrate that the top is formed with Image Sensor, and above-mentioned Image Sensor electrically connects metal level.A plurality of trench dielectric layers are formed among this substrate.And above-mentioned each trench dielectric layer is around the substrate of a part, to form area of isolation.Via is formed among the interior substrate of above-mentioned area of isolation, and electrically connects metal level.Above-mentioned image sensing element packaging body also comprises the scolder spheroid, and electrically connects Image Sensor via via.In addition, above-mentioned image sensing element packaging body also comprises cover plate, and it is engaged on the substrate.In above-mentioned image sensing element packaging body, owing to the scolder spheroid can electrically connect Image Sensor via the via that is formed in the area of isolation, make the signal of Image Sensor to conduct to the outside, thereby need not walk around the outside of the substrate that forms Image Sensor via metal level and via.Therefore, can shorten the signal conducting path of Image Sensor.
The present invention also provides a kind of image sensing element packaging body, and this image sensing element packaging body comprises: substrate, and its top is formed with Image Sensor; Metal level is formed on this substrate, and is electrically connected to this Image Sensor; A plurality of trench dielectric layers are formed among this substrate; A plurality of area of isolation are positioned among this substrate, and wherein each described trench dielectric layer is around each described area of isolation; Via be formed among this substrate in this area of isolation respectively, and this via is electrically connected to this metal level; And the scolder spheroid, be arranged on the back side of this substrate, and electrically connect this Image Sensor via this via.
In the above-mentioned image sensing element packaging body, the thickness of this substrate can be less than 150 microns.
In the above-mentioned image sensing element packaging body, each described area of isolation can be positioned at should metal level among the substrate of below.
In the above-mentioned image sensing element packaging body, the profile of described area of isolation can rounded or rectangle.
Above-mentioned image sensing element packaging body also can comprise: a cover plate is arranged on this substrate and this Image Sensor; And the support portion, be formed between this cover plate and this substrate.
Above-mentioned image sensing element packaging body also can comprise: conductive layer is formed at the back side of this substrate, and electrically connects this via and this scolder spheroid; And soldering-resistance layer, be formed on this conductive layer.
The 3rd purpose of the present invention provides a kind of manufacture method of image sensing element packaging body.The substrate that provides the top to be formed with Image Sensor and metal level is provided the manufacture method of above-mentioned image sensing element packaging body.Then, cover plate is engaged on the substrate.Afterwards, from this substrate of back side thinning of substrate.Among this substrate, form trench dielectric layer, and make this trench dielectric layer, to form area of isolation around a part of substrate.Then, form via among the substrate in this area of isolation, and this via electrically connects this metal level.Afterwards, on the back side of this substrate, form the scolder spheroid, and this scolder spheroid electrically connects above-mentioned Image Sensor.In the manufacture method of above-mentioned image sensing element packaging body, because above-mentioned substrate is through the thinning step process, so can reduce the integral thickness of the image sensing element packaging body of follow-up formation.Therefore, also can dwindle the size of image sensing element packaging body.
In the manufacture method of above-mentioned image sensing element packaging body, engage this cover plate and also can comprise: on this cover plate, form the support portion; And on this support portion coating adhesive, and this cover plate is engaged on this substrate.
In the manufacture method of above-mentioned image sensing element packaging body, forming this trench dielectric layer can comprise: form groove among this substrate; Fill insulant among this groove is to form this trench dielectric layer.
In the manufacture method of above-mentioned image sensing element packaging body, forming this groove can be to finish with the mode of laser drill or dry-etching.
In the manufacture method of above-mentioned image sensing element packaging body, the mode that forms this via can comprise: form hole among this area of isolation; And on the back side of this substrate, form conductive layer, and this conductive layer extends among this hole, to form this via.
Description of drawings
Next, conjunction with figs. is described, so that further understand the specific embodiment of the present invention and advantage, wherein:
Fig. 1 shows a kind of profile of image sensing element packaging body of prior art;
Fig. 2-Fig. 7 shows the schematic diagram of making a kind of image sensing element packaging body according to an embodiment of the invention; And
Fig. 8 shows the flow chart of making a kind of image sensing element packaging body according to an embodiment of the invention.
Wherein, description of reference numerals is as follows:
The related art component symbol
2～substrate; 4～Image Sensor; 6～extension bond pad; 8～cover plate; 10～conductive layer; 12～scolder spheroid.
The embodiment component symbol
102～substrate; 104～Image Sensor; 106～metal level; 108～cover plate; 110～support portion; 112～adhesive; 114～gap; 116～groove; 118～groove; 119～area of isolation; 120～insulating barrier; 122～trench dielectric layer; 124～hole; 126～conductive layer; 128～via; 130～Image Sensor zone; 132～soldering-resistance layer; 134～scolder spheroid; 150～image sensing element packaging body.
Embodiment
Next describe the present invention in detail by embodiment and conjunction with figs., at accompanying drawing or in describing, similar or same section uses identical symbol.In the accompanying drawings, may enlarge shape or the thickness of embodiment, to simplify or convenient the sign.The part of element will be to describe explanation in the accompanying drawing.Apprehensiblely be that not shown in the figures or element that literal is not described can have the various forms that well known to a person skilled in the art.
Fig. 2-Fig. 7 is the schematic diagram that shows according to a kind of image sensing element packaging body of making of the embodiment of the invention.Though the present invention with the specific embodiment of making Image Sensor as an illustration.Scrutable is that notion of the present invention can certainly be applied to the making of other semiconductor element.Fig. 8 is the making flow chart that shows according to one embodiment of the invention.
In Fig. 2, for example substrate 102 of silicon material is provided, and above above-mentioned substrate 102, is formed with Image Sensor (image sensor) 104 and metal level 106.In one embodiment, utilize for example complementary metal oxide semiconductors (CMOS) (complementary metal-oxide semiconductor; CMOS) technology forms above-mentioned Image Sensor 104.Then, utilize metallization process (metallizationprocess), above above-mentioned substrate 102, form above-mentioned metal level 106, and metal level 106 electrically connects Image Sensor 104.
Above-mentioned Image Sensor 104 can be metal oxide semiconductor device or charge coupled cell (charge-coupled device; CCD).And above-mentioned metal level 106 can be copper (copper; Cu), aluminium (aluminum; Al) or tungsten (tungsten; W).
Though it should be noted that among the figure and only represent metal level 106 with individual layer.But can understand, above-mentioned metal level 106 can be represented internal connection-wire structure (interconnection structure), inserts and puts the multiple layer metal layer of dielectric layer in the middle of it comprises, and electrically connects with metal plug between each metal level.In the embodiment of above-mentioned internal connection-wire structure, the metal level of the bottom can directly be formed on the substrate, and the metal level of top layer can be stacked in the metal level top of the bottom, and electrically connects Image Sensor.
As shown in Figure 3, on above-mentioned substrate 102, cover plate 108 is set.In one embodiment, on above-mentioned cover plate 108, form for example epoxy resin (epoxy), polyimide resin (polyimide; PI), the support portion 110 of photoresist (photoresist) material.Then, after coating on the above-mentioned support portion 110 for example contains the adhesive 112 of epoxy resin, this cover plate 108 is engaged in the top of above-mentioned substrate 102, with formation gap 114 between cover plate 108 and substrate 102.Above-mentioned cover plate 108 is preferable can be the transparency carrier of glass, quartz (quartz) or other suitable material.In addition, above-mentioned cover plate 108 also can be the macromolecular material of polyesters (polyester) for example.
(not shown) also can be formed at support portion 110 on the substrate 102 in another embodiment, and then, coating adhesive 112 above support portion 110.Afterwards, above-mentioned cover plate 108 is set above support portion 110, so that cover plate 108 is engaged on the substrate 102.
After finishing above-mentioned engagement step, then, the above-mentioned substrate 102 of thinning.In one embodiment, utilize for example mode of cmp (chemical mechanical polishing) method, grinding steps is carried out at the back side of this substrate 102, so that substrate 102 is thinned to suitable thickness.After the thinning step, the thickness of substrate 102 is preferable can be less than 150 microns (μ m).After finishing above-mentioned thinning step, then, indentation (notching) step is carried out at the back side of substrate 102, among substrate 102, to form groove 116, as shown in Figure 4.
In Fig. 4, then, among above-mentioned substrate 102, form trench dielectric layer (trench isolation) 122.In one embodiment, via dry-etching (dry-etching) step, the back side of etch substrate 102, with formation groove 118 among this substrate 102, and groove 118 is around the substrate 102 of a part.Then, on the back side of substrate 102, deposit for example insulating barrier 120 of silica (silicon oxide), silicon nitride (siliconnitride), silicon oxynitride (silicon oxynitride) or other suitable insulation material, and this insulating barrier 120 also extends among the groove 118, to form trench dielectric layer 122, reach the area of isolation (isolation region) 119 that is centered on by trench dielectric layer 122.Scrutable is that before carrying out above-mentioned dry-etching step, formation patterning photoresist (not shown) on the back side of substrate 102 with shaded portions substrate 102, and exposes the part substrate 102 that will remove earlier.
In another embodiment, also can utilize the mode of laser drill (laser drill), after forming groove 118, then, among groove 118, form insulating barrier 120 again, among substrate 102, to form above-mentioned trench dielectric layer 122 and area of isolation 119.It should be noted that area of isolation 119 that above-mentioned trench dielectric layer 122 is centered on is positioned at the substrate 102 of corresponding metal level 106 belows.
In Fig. 5, then, form via (viahole) 128 among the substrate 102 in above-mentioned area of isolation 119.In one embodiment, at first, remove the insulating barrier 120 in the part covering area of isolation 119, to expose the surface of the substrate 102 in the area of isolation 199.Then, utilize for example dry-etching, laser drill or other suitable manner, form hole 124 among the substrate 102 in area of isolation 119.Afterwards, on the back side of above-mentioned substrate 102, form conductive layer 126, and this conductive layer 126 extends to also among the above-mentioned hole 124, to form the via 128 that electrically connects with metal level 106.It should be noted that above-mentioned trench dielectric layer 122 is around this via 128, to isolate this via 128.
In one embodiment, the mode that forms above-mentioned conductive layer 126 can be that to utilize for example be sputter (sputtering), evaporation (evaporating), the mode of electroplating (electroplating) or chemical plating (electrolessplating), the conductive material layer (not shown) of compliance landform precedent such as aluminium, copper or nickel (nickel) on the back side of substrate 102, and this conductive material layer also extends among the hole 124, to electrically connect metal level 106.Then, use photoetching and etching (photolithography/etching) technology, with above-mentioned conductive material layer patterning, to form above-mentioned conductive layer 126 and via 128.It should be noted that step, again the signal of the image sensing element packaging body of the follow-up formation of layout (redistributed process) conduction route via above-mentioned patterning conductive material layer.
Fig. 6 is the front view of the substrate back of the image sensing element packaging body in the displayed map 5.In Fig. 6, clipped is completed element in Fig. 5, describes compactly with clear.As shown in Figure 6, groove 116 is divided into a plurality of crystal grain with substrate 102.Include the Image Sensor zone 130 that forms Image Sensor 104 (as shown in Figure 5) at each intragranular, shown in the dotted line of Fig. 6.In addition, be formed with trench dielectric layer 122, area of isolation 119 and via 128 in the zone of 130 peripheries, above-mentioned Image Sensor zone.In Fig. 6, trench dielectric layer 122 is around above-mentioned area of isolation 119, and above-mentioned via 128 is formed among the substrate 102 in the area of isolation 119.That is to say that trench dielectric layer 122 is not only around area of isolation 119, simultaneously also around via 128.
It should be noted that in Fig. 6 though only show a minority trench dielectric layer 122 and via 128, scrutable is that trench dielectric layer 122 and via 128 are around above-mentioned Image Sensor zone 130.In addition, in Fig. 6, the profile of the area of isolation 119 that trench dielectric layer 122 is centered on is rectangular, yet the profile of the area of isolation 119 that trench dielectric layer 122 is centered on also can be circular.That is to say that trench dielectric layer 122 is concentric circles with via 128.
In Fig. 7, then, the soldering-resistance layer 132 of coating cover part conductive layer 126 on the back side of substrate 102, and this soldering-resistance layer 132 of patterning are with expose portion conductive layer 126.Afterwards, form scolder spheroid 134, and scolder spheroid 134 electrically connects metal level 106 via via 128 at conductive layer 126.In one embodiment, after forming soldering-resistance layer 132, on the conductive layer 126 that exposes, be coated with scolder.Then, carry out reflow (reflow) step, to form above-mentioned scolder spheroid 134.After finishing above-mentioned steps, utilize cutting blade (cutter) to cut out individual die, to finish the making of image sensing element packaging body 150 along the precut line of individual die.In another embodiment, also can cut individual die, to finish the making of image sensing element packaging body via the mode of dry-etching.
Fig. 7 shows the profile according to the image sensing element packaging body 150 of the embodiment of the invention.In Fig. 7, provide the top to be formed with the substrate 102 of Image Sensor 104 and metal level 106.Among this substrate 102, be formed with trench dielectric layer 122, and this trench dielectric layer 122 is around the substrate 102 of part, to form area of isolation 119.As shown in Figure 7, via 128 is formed among the above-mentioned area of isolation 119, and the scolder spheroid 134 of metal level 106 and follow-up formation is electrically connected.Afterwards, cover plate 108 is set above substrate 102.
According to the image sensing element packaging body of the embodiment of the invention, because conductive layer electrically connects the via that is formed in the area of isolation.Make the signal of Image Sensor to conduct to the outside, and need not walk around the outside of the substrate that forms Image Sensor via metal level, via and conductive layer.Therefore, can shorten the signal conducting path of Image Sensor.In addition, because the signal conducting path need not be formed at the outside of image sensing element packaging body, therefore, also can reduce the problem that conductive layer damages in manufacturing process.
Fig. 8 shows the flow chart according to the making image sensing element packaging body of the embodiment of the invention.In Fig. 8, at first, the substrate that provides the top to be formed with Image Sensor and metal level is as step S5; Then, cover plate is engaged on the above-mentioned substrate, as step S10; Afterwards, the above-mentioned substrate of thinning is as step S15; Then, among substrate, form trench dielectric layer, and this trench dielectric layer is around the part substrate, to form area of isolation, as step S20; Then, form via among the substrate in above-mentioned area of isolation, as step S25; Afterwards, on the back side of above-mentioned substrate, form the scolder spheroid, and electrically connect Image Sensor, as step S30 via above-mentioned via; At last, carry out cutting step, to finish image sensing element packaging body, as step S35.
It should be noted that owing to above-mentioned substrate process thinning step process, so can reduce the integral thickness of the image sensing element packaging body of follow-up formation.Therefore, the image sensing element packaging body according to the making of the embodiment of the invention has less relatively size.In addition, owing to need not attach the technology of chip to loading plate, and the prior art etching step of separating chips in advance, therefore, also can simplify the making flow process of image sensing element packaging body.
Though the present invention with preferred embodiment openly as above; yet it is not in order to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention, change that Ying Kezuo is certain and modification, so protection scope of the present invention should be as the criterion with the claims scope.
Claims (11)
1. image sensing element packaging body comprises:
Substrate, its top is formed with Image Sensor;
Metal level is formed on this substrate, and is electrically connected to this Image Sensor;
A plurality of trench dielectric layers are formed among this substrate;
A plurality of area of isolation are positioned among this substrate, and wherein each described trench dielectric layer is around each described area of isolation;
Via be formed among this substrate in this area of isolation respectively, and this via is electrically connected to this metal level; And
The scolder spheroid is arranged on the back side of this substrate, and electrically connects this Image Sensor via this via.
2. image sensing element packaging body as claimed in claim 1, wherein the thickness of this substrate is less than 150 microns.
3. image sensing element packaging body as claimed in claim 1, wherein each described area of isolation is positioned at should metal level among the substrate of below.
4. image sensing element packaging body as claimed in claim 1, the profile of wherein said area of isolation comprises circle or rectangle.
5. image sensing element packaging body as claimed in claim 1 also comprises:
One cover plate is arranged on this substrate and this Image Sensor; And
The support portion is formed between this cover plate and this substrate.
6. image sensing element packaging body as claimed in claim 1 also comprises:
Conductive layer is formed at the back side of this substrate, and electrically connects this via and this scolder spheroid; And
Soldering-resistance layer is formed on this conductive layer.
7. the manufacture method of an image sensing element packaging body comprises:
Provide the top to be formed with the substrate of Image Sensor and metal level;
Engage cover plate on this substrate;
This substrate of thinning;
Among this substrate, form trench dielectric layer, and this trench dielectric layer is around this substrate of a part, to form area of isolation;
Form via among this substrate in this area of isolation, and this via electrically connects this metal level;
On the back side of this substrate, form the scolder spheroid, and this scolder spheroid electrically connects this Image Sensor.
8. the manufacture method of image sensing element packaging body as claimed in claim 7 wherein engages this cover plate and also comprises:
On this cover plate, form the support portion; And
Coating adhesive on this support portion, and this cover plate is engaged on this substrate.
9. the manufacture method of image sensing element packaging body as claimed in claim 7 wherein forms this trench dielectric layer and comprises:
Among this substrate, form groove;
Fill insulant among this groove is to form this trench dielectric layer.
10. the manufacture method of image sensing element packaging body as claimed in claim 9, wherein forming this groove is to finish in the mode of laser drill or dry-etching.
11. the manufacture method of image sensing element packaging body as claimed in claim 7, the mode that wherein forms this via comprises:
Among this area of isolation, form hole; And
On the back side of this substrate, form conductive layer, and this conductive layer extends among this hole, to form this via.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101416512A CN101369591B (en) | 2007-08-17 | 2007-08-17 | Image sensing element packaging body and preparation thereof |
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| CN2007101416512A CN101369591B (en) | 2007-08-17 | 2007-08-17 | Image sensing element packaging body and preparation thereof |
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| CN101369591A CN101369591A (en) | 2009-02-18 |
| CN101369591B true CN101369591B (en) | 2010-07-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8536672B2 (en) * | 2010-03-19 | 2013-09-17 | Xintec, Inc. | Image sensor package and fabrication method thereof |
| TWI544592B (en) * | 2010-05-27 | 2016-08-01 | 精材科技股份有限公司 | Package structure and method for making the same |
| US8692358B2 (en) * | 2010-08-26 | 2014-04-08 | Yu-Lung Huang | Image sensor chip package and method for forming the same |
| CN102856329B (en) * | 2011-06-30 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | Method for encapsulating through silicon via |
| CN102339841A (en) * | 2011-10-08 | 2012-02-01 | 江阴长电先进封装有限公司 | High-reliability image sensor packaging structure without silicon through hole |
| CN103841300B (en) * | 2012-11-20 | 2017-06-27 | 联想(北京)有限公司 | Method and camera module that a kind of camera module makes |
| CN103400807B (en) | 2013-08-23 | 2016-08-24 | 苏州晶方半导体科技股份有限公司 | The wafer level packaging structure of image sensor and method for packing |
| CN106684067B (en) * | 2017-03-09 | 2023-09-29 | Oppo广东移动通信有限公司 | Fingerprint identification chip packaging structure and electronic device |
| CN114597201A (en) * | 2022-02-21 | 2022-06-07 | 江苏长电科技股份有限公司 | Sensor packaging structure and packaging method |
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| JP特开2005-209967A 2005.08.04 |
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