CN101369590A - Pixel structure - Google Patents

Abstract

The invention discloses a pixel structure, comprising a grid wire formed on a grid electrode layer and a first floating metal electrode; a first semiconductor electrode and a second semiconductor electrode formed on a semiconductor layer; and a source electrode, a drain electrode, a data wire and a second floating metal electrode formed on a source/drain electrode layer, the source electrode is connected with the data wire that is formed with a source projection, the drain electrode is formed with a drain projection; wherein the source projection and the drain projection respectively partially overlap the second semiconductor electrode, the first floating metal electrode partially overlaps the second floating metal electrode. The inventive pixel structure can enable the repaired pixels to charge and discharge normally and acquire a predetermined objective value.

Description

Dot structure

Technical field

The present invention relates to a kind of dot structure, particularly relate to the dot structure of a kind of Thin Film Transistor-LCD (TFT LCD).

Background technology

(thin film transistor liquid crystal display is a kind of flat-panel screens that is widely used most at present TFT-LCD) to Thin Film Transistor-LCD, and it has advantages such as low-power, thin type light weight and low voltage drive.Along with the continuous increase of panel designs size, the complexity of manufacture craft and difficulty also raise day by day along with the continuous increase of size.Therefore, be difficult to take into account the restriction of manufacture craft and the influence of control manufacture craft error counter plate display quality in design, and they are the key factors that influence production capacity and yield.Usually in the production process of LCD, often be vulnerable to production process and pollute or electrostatic breakdown, make the unusual short circuit of thin-film transistor or open circuit, thereby cause the point defect of pixel, as bright spot, dim spot and bright spot.

Fig. 1 is the partial pixel structural plan schematic diagram of the liquid crystal indicator of prior art.See also Fig. 1, gate line 11 and data wire 13 intersections are formed with pixel electrode 15.By grid (be positioned at below the gate line 11, figure does not show), the discharging and recharging of the transistor controls pixel electrode 15 that first semi-conducting electrode 121, source electrode 131 and drain electrode 132 are formed.Drain electrode 132 electrically contacts with pixel electrode 15 by contact hole 14.In addition, this dot structure also comprises the diode of being made up of a suspension joint metal electrode 111, one second semi-conducting electrode 122, one source pole lug boss 133 and a drain electrode lug boss 134.When this transistor nonfunctional, can adopt the method for laser repairing, 135 places are got ready at the reparation point, suspension joint metal electrode 111 utilizes melt metal to be electrically connected with source electrode lug boss 133 like this, form a diode with second semi-conducting electrode 122 and drain electrode lug boss 134, thereby reach the purpose of reparation.When data wire 13 is in high potential, utilize the forward conduction characteristic of diode, the signal of data wire 13 is written on the pixel electrode 15; When data wire 13 is in electronegative potential, utilize the reverse leakage characteristic of diode that pixel electrode 15 is discharged.Because therefore this unidirectional on state characteristic of diode can't discharge to pixel electrode 15 fully.

Fig. 2 is the partial pixel structural plan schematic diagram of the liquid crystal indicator of another kind of prior art.See also as Fig. 2, a gate line 21, semi-conductor layer 22, source electrode 233, drain electrode 231 lays respectively on pixel electrode 251 and the pixel electrode 252 with drain electrode 232.Drain electrode 231 electrically contacts with pixel electrode 251 by contact hole 24.Two transistors like this are being symmetrically distributed on gate line.When the transistor nonfunctional on the pixel 252, can utilize it to be positioned at a transistor on the gate line and repair.Adopt the method for laser repairing, utilize melt metal pixel electrode 252 to be connected with drain electrode 232 at reparation point 234 places.Because it is fully identical with pixel electrode 251 to repair the signal of back pixel electrode 252, so the unscheduled design load of signal that shows, and adopts this pixel design, increases the signal delay of grid.

Summary of the invention

Technical problem to be solved by this invention provides a kind of dot structure, can make the pixel after the reparation normally discharge and recharge and obtain predetermined target value.

The present invention solves the problems of the technologies described above the technical scheme that adopts to provide a kind of dot structure, comprising:

One grid electrode layer comprises a gate line and the first suspension joint metal electrode electrically isolated with this gate line;

One gate insulator is arranged on the described grid electrode layer;

Semi-conductor layer is arranged on the described gate insulator, comprises first semi-conducting electrode and second semi-conducting electrode;

The source electrode layer, be arranged on the described semiconductor layer, comprise one source pole electrode, a drain electrode, data wire and the second suspension joint metal electrode, this source electrode links to each other with this data wire, be formed with a drain electrode lug boss on this drain electrode, be formed with the one source pole lug boss on this data wire, this second suspension joint metal electrode and described source electrode, drain electrode and data wire are electrically isolated;

One grid electrode layer comprises a gate line and the first suspension joint metal electrode electrically isolated with this gate line;

Wherein, this source electrode and drain electrode are overlapped with this first semi-conducting electrode respectively, and this source electrode lug boss is overlapped with this second semi-conducting electrode respectively with the drain electrode lug boss, and this first suspension joint metal electrode and this second suspension joint metal electrode are overlapped.

The present invention contrasts prior art following beneficial effect: pixel design of the present invention has the transistor of a suspension joint.When this pixel origination point defective, can utilize this transistor that it is repaired, thereby this pixel is normally shown.Dot structure provided by the invention can make the pixel after the reparation normally discharge and recharge and obtain predetermined target value.

Description of drawings

Fig. 1 is the partial pixel structural plan schematic diagram of the liquid crystal indicator of prior art.

Fig. 2 is the partial pixel structural plan schematic diagram of the liquid crystal indicator of another kind of prior art.

Fig. 3 is a partial pixel of the present invention structural plan schematic diagram.

Fig. 4 is Fig. 3 part enlarged drawing and repairs schematic diagram.

Among the figure:

11 gate lines, 13 data wires, 14 contact holes

15 pixel electrodes, 111 suspension joint metal electrodes, 121 first semi-conducting electrodes

122 second semi-conducting electrodes, 131 source electrodes, 132 drain electrodes

133 source electrode lug bosses, 134 drain electrode lug bosses 135 are repaired point

21 gate lines, 22 semiconductor layers, 23 data wires

24 contact holes, 231 source electrodes, 232 drain electrodes

233 drain electrodes 234 are repaired point 251 first pixel electrodes

252 second pixel electrodes, 31 gate lines, 33 data wires

34 contact holes, 35 pixel electrodes, 311 first suspension joint metal electrodes

321 first semi-conducting electrodes, 322 second semi-conducting electrodes

331 source electrodes, 332 drain electrodes

333 source electrode lug bosses, 334 drain electrode lug bosses, 335 second suspension joint metal electrodes

341 the first film transistors, 342 second thin-film transistors

Embodiment

The invention will be further described below in conjunction with accompanying drawing and exemplary embodiments.

Fig. 3 is a partial pixel of the present invention structural plan schematic diagram, and Fig. 4 is Fig. 3 part enlarged drawing and repairs schematic diagram.Please refer to Fig. 3 and Fig. 4, the thin-film transistor array base-plate that the present invention adopts is a sandwich construction, is formed with a grid electrode layer, a gate insulator, semi-conductor layer and source electrode layer on substrate successively.

It is electrically isolated to be formed with a gate line 31 and one first suspension joint metal electrode, 311, the first suspension joint metal electrodes 311 and gate line 31 on the grid electrode layer.

Be formed with first semi-conducting electrode 321 and second semi-conducting electrode 322 on the semiconductor layer.

Be formed with a data wire 33 on the source/drain electrode layer, one source pole electrode 331, one drain electrodes 332 and one second suspension joint metal electrode, 335, the second suspension joint metal electrodes 335 and data wire 33, source electrode 331, drain electrode 332 are electrically isolated.

Wherein, gate line 31 and data wire 33 intersections are formed with pixel electrode 35, and the pixel electrode 35 of this pixel electrically connects by a contact hole 34 with drain electrode 332.Source electrode 331 is overlapped with first semi-conducting electrode 321 respectively with drain electrode 332, source electrode lug boss 333 is overlapped with second semi-conducting electrode 322 respectively with drain electrode lug boss 334, and the first suspension joint metal electrode 311 and the second suspension joint metal electrode 335 are overlapped.During operate as normal, control discharging and recharging of pixel electrodes 35 by the first film transistor 341 that source electrode 331, first semi-conducting electrode 321 and drain electrode 332 form.Data wire 33 transmits source signal to source electrode 331, and gate line 31 has a gate electrode (figure does not show) that is positioned at first semi-conducting electrode, 321 belows, and signal is sent to gate electrode via gate line 31.

When under complete black picture, checking that this pixel of discovery is a bright spot, get ready on the second suspension joint metal electrode, 335 surfaces with the method for laser repairing, as shown in Figure 4.After repairing, gate line 31, the second suspension joint metal electrode 335 and the first suspension joint metal electrode 311 electrically connect.Form second thin-film transistor 342 by source electrode lug boss 333, semiconductor 322 and drain electrode lug boss 334.The gate electrode signal can pass through the second suspension joint metal electrode 335, arrive the first suspension joint metal electrode 311, repair the back and control discharging and recharging of pixel electrodes 35 by second thin-film transistor 342, pixel electrode 35 can obtain and repair preceding the same signal voltage, thereby reaches the effect of reparation.That is to say, under the normal condition, work by the first film transistor 341 that source electrode 331, semiconductor 321 and drain electrode 332 form, after the first film transistor 341 lost efficacy, by above-mentioned restorative procedure, work by second thin-film transistor 342 that source electrode lug boss 333, second semi-conducting electrode 322 and drain electrode lug boss 334 form.

Pixel of the present invention is provided with the transistor of a suspension joint, i.e. second thin-film transistor 342 when this pixel origination point defective, can utilize second thin-film transistor 342 that it is repaired, thereby this pixel is normally shown.Dot structure of the present invention can make the pixel after the reparation normally discharge and recharge and obtain predetermined target value.

Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.

Claims (1)

1. dot structure comprises:

One grid electrode layer comprises a gate line and the first suspension joint metal electrode electrically isolated with this gate line;

One gate insulator is arranged on the described grid electrode layer;

Semi-conductor layer is arranged on the described gate insulator, comprises first semi-conducting electrode and second semi-conducting electrode;

The source electrode layer, be arranged on the described semiconductor layer, comprise one source pole electrode, a drain electrode, data wire and the second suspension joint metal electrode, this source electrode links to each other with this data wire, be formed with a drain electrode lug boss on this drain electrode, be formed with the one source pole lug boss on this data wire, this second suspension joint metal electrode and described source electrode, drain electrode and data wire are electrically isolated;

Wherein, this source electrode and drain electrode are overlapped with this first semi-conducting electrode respectively, and this source electrode lug boss is overlapped with this second semi-conducting electrode respectively with the drain electrode lug boss, and this first suspension joint metal electrode and this second suspension joint metal electrode are overlapped.

Images