CN101369462A - Dynamic compensation method and device used for flawed flash memory - Google Patents
Dynamic compensation method and device used for flawed flash memory Download PDFInfo
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- CN101369462A CN101369462A CNA200710075783XA CN200710075783A CN101369462A CN 101369462 A CN101369462 A CN 101369462A CN A200710075783X A CNA200710075783X A CN A200710075783XA CN 200710075783 A CN200710075783 A CN 200710075783A CN 101369462 A CN101369462 A CN 101369462A
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Abstract
The invention discloses a method for dynamically compensating a flaw flash memory, which comprises obligating a set of good blocks in the flash memory as replacing blocks; if finding destroyed blocks by detection, replacing the destroyed block with a block in the set of good blocks; placing the replaced destroyed block at the back of the good blocks; based on the technical proposal provided by the invention, the invention can perform dynamical compensation using the method of replacing the destroyed block, can reduce error probability of the flash memory for classified flash memories, and the flash memory can be better used.
Description
Technical field
The present invention relates to the flash memory storage field, refer to a kind of flaw flash memory dynamic compensation method and device especially.
Background technology
Flash memory: flash memory is the transliteration of Flash Ram.Flash memory non-volatilely (simply says that data can not lost yet under situation about not powering up as a kind of, be different from calculator memory at present commonly used) semiconductor memory chip, it is little to have volume, low in energy consumption, be not subject to the advantage of physical damage, it is the desirable storage medium of mobile digital product, at present, its widespread usage is at digital television, the digital portable video camera, mobile phone, digital camera, palm PC (PDA), game machine, in the equipment such as MP3 player, the kind of flash memory roughly is divided into: two kinds on the fast code storage type (NOR) of data storage type (NAND) that storage volume is big and processing speed.
The design feature of flash memory, it is made up of a lot of pieces (block), and each piece (block) comprises 64 pages (page), and each page or leaf (page) comprises 4 sectors (sector).
The write operation of flash memory must be carried out at white space, if there have been data the target area, must wipe afterwards earlier and write, therefore when flash memory read and write often, in the piece just bad sector may appear.In order to prevent owing to data are write bad sector, and cause losing of data, usually the method that adopts is: before using flash memory, flash memory is carried out initialization scan earlier, as long as occur a bad sector in the piece, be about to whole and be labeled as bad piece, then with data storage in good piece, this method is by preventing that data are write the safe storage that bad sector realizes data.
But, even like this, also still have some bad pieces, if find bad piece in use, can influence the use of flash memory.
Summary of the invention
The object of the present invention is to provide a kind of dynamic compensation method of flaw flash memory, it can overcome the defective of existing flash memory, and the flash memory that has bad piece is carried out dynamic compensation, guarantees data security.
In order to realize the purpose of foregoing invention, the technical solution adopted in the present invention is:
A kind of dynamic compensation way that is used for flaw flash memory may further comprise the steps:
Reserve one group of good piece in the flash memory and be set to replace block;
The scanning flash memory;
Utilize the piece in the replace block to replace bad piece.
The described dynamic compensation way that is used for flaw flash memory, it is further comprising the steps of: the bad piece that will be replaced is placed on this and has organized the piece back.
A kind of dynamic compensating device that is used for flaw flash memory, it comprises:
The unit is set, reserves one group of good piece in the flash memory and be set to replace block;
Scanning element is used to scan flash memory;
Replace the unit, utilize the good piece in the replace block, replace the bad piece that scans out.
Described replacement unit, badly being placed on this has organized the piece back with replacing the piece that comes out for it.
By above technical scheme provided by the invention as seen, the present invention utilizes the method for replace block to carry out dynamic compensation, can reduce the probability that flash memory is made mistakes, and better uses flash memory.
Description of drawings
Fig. 1 is the process flow diagram of the inventive method;
Fig. 2 is the structural representation of apparatus of the present invention.
Embodiment
The invention provides a kind of flaw flash memory dynamic compensation method that is used for, comprise step: will reserve one group of good piece piece as an alternative in the flash memory; By scanning,, then this has been organized in the piece one bad piece has been replaced if find that bad piece is arranged; The bad piece that is replaced is placed on this has organized the piece back.
In this dynamic compensation method, it mainly is that those skilled in the art knows after being classified at flash memory, though the conductively-closed of the bad piece of flash memory is fallen, but, the instability of performance, in use, still bad piece can appear, if can in use rescan flash memory, if find bad piece, utilize the replace block of reserving in the flash memory to replace bad piece again, can utilize flash memory better with this.
In order to make those skilled in the art person understand the present invention program better, the present invention is described in further detail below in conjunction with drawings and embodiments.
Fig. 1 has shown process flow diagram of the present invention, as shown in the figure, comprising:
Step 101: at first in flash memory, reserve one group of good piece, it is defined as replace block.
Step 102: by EDC (Error detection unit) and ECC (error correction unit) flash memory is scanned, then information feedback is returned, two kinds of information are compared, can find wherein whether to have bad piece;
Step 103:, then replace this bad piece with this of having organized in the piece if having.
Step 104: the bad piece after being replaced, it can be placed on this and organize the piece back.
If constantly finding has bad piece, after all good pieces have been replaced, the worse piece that is replaced is for the first time gone to replace when performing piece, by that analogy.
Adopt this method, because this flash chip was accurately divided class, therefore its bad piece number can't be a lot, just for deal with catch sight of bad piece number, and, because the unstable properties that flash memory is original, sometimes the bad piece of its discovery is not real bad piece, is the bad piece of thinking when scanning, so bad piece is placed on the replace block back, when have bad piece next time, just can work as and perform piece and use.
The present invention also provides a kind of flash data memory storage, and as shown in Figure 4, this dynamic compensating device that is used for flaw flash memory comprises:
Unit 201 is set, reserves one group of good piece in the flash memory and be set to replace block;
Scanning element 202 is used to scan flash memory;
Replace unit 203, utilize the good piece in the replace block, replace the bad piece that scans out, the bad piece that will be replaced has been placed on the back of piece then.
During use,, go to replace when performing piece with the bad piece that is replaced for the first time again, by that analogy if after all replace blocks all use up.
Though described the present invention by embodiment, those of ordinary skills know, the present invention has many distortion and variation and do not break away from spirit of the present invention, wish that appended claim comprises these distortion and variation and do not break away from spirit of the present invention.
Claims (4)
1. dynamic compensation way that is used for flaw flash memory is characterized in that: may further comprise the steps:
Reserve one group of good piece in the flash memory and be set to replace block;
The scanning flash memory;
Utilize the piece in the replace block to replace bad piece.
2. the dynamic compensation way that is used for flaw flash memory as claimed in claim 1, it is characterized in that: the bad piece that will be replaced is placed on this and has organized the piece back.
3. dynamic compensating device that is used for flaw flash memory is characterized in that: comprising:
The unit is set, reserves one group of good piece in the flash memory and be set to replace block;
Scanning element is used to scan flash memory;
Replace the unit, utilize the good piece in the replace block, replace the bad piece that scans out.
4. the dynamic compensating device that is used for flaw flash memory as claimed in claim 3 is characterized in that: described replacement unit, badly being placed on this has organized the piece back with replacing the piece that comes out for it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710075783XA CN101369462A (en) | 2007-08-17 | 2007-08-17 | Dynamic compensation method and device used for flawed flash memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710075783XA CN101369462A (en) | 2007-08-17 | 2007-08-17 | Dynamic compensation method and device used for flawed flash memory |
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| CN101369462A true CN101369462A (en) | 2009-02-18 |
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| CNA200710075783XA Pending CN101369462A (en) | 2007-08-17 | 2007-08-17 | Dynamic compensation method and device used for flawed flash memory |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010115332A1 (en) * | 2009-04-10 | 2010-10-14 | 国民技术股份有限公司 | Method for using bad blocks of flash memory |
| CN103309816A (en) * | 2013-05-31 | 2013-09-18 | 苏州亮智科技有限公司 | Solid hard disk, electronic device with solid hard disk and dynamic capacity control method of solid hard disk |
| CN105513630A (en) * | 2015-11-30 | 2016-04-20 | 深圳市江波龙电子有限公司 | DRAM initialization method and device thereof |
| CN113207225A (en) * | 2021-03-16 | 2021-08-03 | 合肥致存微电子有限责任公司 | Chip-replaceable storage device and chip replacement, verification and manufacturing method thereof |
-
2007
- 2007-08-17 CN CNA200710075783XA patent/CN101369462A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010115332A1 (en) * | 2009-04-10 | 2010-10-14 | 国民技术股份有限公司 | Method for using bad blocks of flash memory |
| CN101859604B (en) * | 2009-04-10 | 2012-10-24 | 国民技术股份有限公司 | Utilization method of flash memory bad block |
| CN103309816A (en) * | 2013-05-31 | 2013-09-18 | 苏州亮智科技有限公司 | Solid hard disk, electronic device with solid hard disk and dynamic capacity control method of solid hard disk |
| CN105513630A (en) * | 2015-11-30 | 2016-04-20 | 深圳市江波龙电子有限公司 | DRAM initialization method and device thereof |
| CN105513630B (en) * | 2015-11-30 | 2019-08-13 | 深圳市江波龙电子股份有限公司 | The initial method and device of DRAM |
| CN113207225A (en) * | 2021-03-16 | 2021-08-03 | 合肥致存微电子有限责任公司 | Chip-replaceable storage device and chip replacement, verification and manufacturing method thereof |
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Application publication date: 20090218 |