CN101368069A - Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium - Google Patents
Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium Download PDFInfo
- Publication number
- CN101368069A CN101368069A CNA2007100261675A CN200710026167A CN101368069A CN 101368069 A CN101368069 A CN 101368069A CN A2007100261675 A CNA2007100261675 A CN A2007100261675A CN 200710026167 A CN200710026167 A CN 200710026167A CN 101368069 A CN101368069 A CN 101368069A
- Authority
- CN
- China
- Prior art keywords
- abrasive material
- silicon dioxide
- nano
- polishing solution
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides nano-silicon dioxide abrasive polishing solution used for processing zinc and chromium, which comprises abrasive I, abrasive II, surfactant, pH regulator, inhibitor and de-ionized water; the weight percent of the components is as follows: 10 to 40 percent of abrasive I, 5 to 20 percent of abrasive II, 0.01 to 0.6 percent of surfactant, 1 to 6 percent of pH regulator, 0.01 to 5 percent of inhibitor and the rest is de-ionized water. The pH value of the mixed liquid of the components is 10 to 12. The nano-silicon dioxide abrasive polishing solution can be used for surface polishing of zinc and chromium and can effectively reduce surface tears after the surface is polished and reduce the roughness of surface. In addition, the nano-silicon dioxide abrasive polishing solution polishes the surface quickly and does not corrode equipment with high safety when being used.
Description
Technical field
The present invention relates to polishing fluid, relate in particular to the nano-silicon dioxide abrasive material polishing solution of a kind of zinc and chromium processing usefulness.
Background technology
Abroad, mainly be western developed country, zinc and chromium processing material are used more extensive.Zinc and chromium metallic substance have a series of superior mechanical propertys, chemical property and good processing performance, and pass reduction can reach 60% ~ 80%.: middle pressure superior performance, can carry out deep-drawing, and have self lubricity, prolonged die life, available soldering or resistance welding or electric-arc welding (need in helium) are welded, the surface processing of can electroplating, paint, machinability is good.The zine plate material is also as the spring piece of car horn, because the interaction of its self lubricity can withstand the spring piece action time has weather-resistant again, can also replace brass and make some daily hardware parts.
Zinc and chromium material will pass through surface treatment before application, improve surface quality.But the special-purpose polishing liquid of zinc and chromium surface polishing at present is when polishing, and polishing speed is uncontrollable, and produces acid mist, influence the healthy of field personnel, and surface quality is bad, and especially roughness usually reaches the standard that does not require.
Summary of the invention
Main purpose of the present invention is to overcome the above-mentioned shortcoming that currently available products exists, and provide a kind of zinc and chromium to process the nano-silicon dioxide abrasive material polishing solution of usefulness, can effectively reduce the surface tear behind zinc and the chrome polish, surfaceness behind reduction zinc and the chrome polish, can satisfy the needs of various occasions, and polishing speed can control, and polishing fluid is etching apparatus not, the safety performance height of use.
The objective of the invention is to realize by following technical scheme.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness comprises abrasive material I, abrasive material II, tensio-active agent, PH conditioning agent and deionized water; It is characterized in that: the shared weight percent of various components is: abrasive material I is 10% to 40%, and abrasive material II is 5% to 20%, and tensio-active agent is 0.01% to 0.6%, and the PH conditioning agent is 1% to 6%, and inhibiter is 0.01% to 5%, and deionized water is a surplus; The pH value of aforementioned each component mixed solution is 10 to 12.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described abrasive material I is that particle diameter is 0 to 100nm water-soluble silicon dioxide gel; Described abrasive material II is that particle diameter is 0 to 200nm aerosil powder.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: the particle diameter of described abrasive material I preferred 10 is to 80nm; The particle diameter of described abrasive material II preferred 50 is to 150nm.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described tensio-active agent is a nonionic surface active agent.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described nonionic surface active agent is fatty alcohol-polyoxyethylene ether or polyvalent alcohol polyoxyethylene ether carboxylate.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described pH value conditioning agent is mineral alkali, organic bases or their combination.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described mineral alkali is a potassium hydroxide, sodium hydroxide or peroxide trisodium phosphate; Described organic bases is a kind of in many hydroxyls polyamines and the amine or their combination.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described many hydroxyls polyamines is trolamine, THED tetrahydroxy ethylene diamine or hexahydroxy-propyl group propylene diamine; Described amine is quadrol, N,N-DIMETHYLACETAMIDE, pivalyl amine or tetramethyl-oxyammonia.
The nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: described inhibiter is benzotriazole (BTA), mercapto benzothiazole (MBT), tolyltriazole (TTA).
The preparation method of the nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that, earlier with the abrasive material II uniform dissolution of required weight in deionized water, then in the environment of thousand grades of decontamination chambers, under the power of negative pressure of vacuum, by mass flowmeter with in the dissolved abrasive material II liquid input pod jar, mix with the abrasive material I of required weight in the container tank and fully stir, all the other components with polishing fluid after mixing add fully stirring of continuation again in the container tank, mix and promptly are prepared into the finished product polishing fluid.
The preparation method of the nano-silicon dioxide abrasive material polishing solution of aforesaid zinc and chromium processing usefulness, it is characterized in that: the envrionment temperature of described thousand grades of decontamination chambers is a normal temperature; Vacuum pressure is-10
5To 0MPa.
The present invention is used for the beneficial effect of the nano-silicon dioxide abrasive material polishing solution of zinc and chromium processing usefulness, this polishing fluid uses the bigger aerosil powder mixes of the less water-soluble silicon dioxide gel of particle diameter and particle diameter as abrasive material, both improved the dispersing property of abrasive material, reduce polishing back devitrified glass surface tear, and the roughness on the devitrified glass surface after the polishing is reduced; In addition, can improve polishing speed greatly; The adding of inhibiter makes the speed in the polishing process reach control; Moreover polishing fluid of the present invention is an alkalescence, does not produce acid mist in the polishing process, and chemical stability is good, etching apparatus not, the safety performance ideal of use.
Embodiment
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, it comprises abrasive material I, abrasive material II, tensio-active agent, PH conditioning agent and deionized water; The shared weight percent of various components is: abrasive material I is 10% to 40%, and abrasive material II is 5% to 20%, and tensio-active agent is 0.01% to 0.6%, and the PH conditioning agent is 1% to 6%, and inhibiter is 0.01% to 5%, and deionized water is a surplus; The pH value of aforementioned each component mixed solution is 10 to 12.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, its abrasive material I is that particle diameter is the water-soluble silicon dioxide gel of 0～200nm; Abrasive material II is that particle diameter is 0 to 200nm aerosil powder; The particle diameter preferred 10 of this abrasive material I is to 80nm, and it is 10nm and 30nm that present embodiment is selected particle diameter for use; The particle diameter preferred 50 of this abrasive material II is to 150nm, and it is 80nm and 120nm that present embodiment is selected particle diameter for use.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, its tensio-active agent is a nonionic surface active agent; This nonionic surface active agent is fatty alcohol-polyoxyethylene ether or polyvalent alcohol polyoxyethylene ether carboxylate; It is that 20 the fatty alcohol-polyoxyethylene ether (O-20) or the polymerization degree are 80 anhydrous sorbitol polyoxyethylene ether-ester (T-80) that present embodiment is selected the polymerization degree for use.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, its pH value conditioning agent is mineral alkali, organic bases or their combination; This mineral alkali is potassium hydroxide, sodium hydroxide or peroxide trisodium phosphate, and present embodiment is selected sodium hydroxide for use; This organic bases is a kind of in many hydroxyls polyamines and the amine or their combination, many hydroxyls polyamines is trolamine, THED tetrahydroxy ethylene diamine or hexahydroxy-propyl group propylene diamine, and amine is quadrol, N,N-DIMETHYLACETAMIDE, pivalyl amine or tetramethyl-oxyammonia, the embodiment of the invention is selected Tetramethylammonium hydroxide for use.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, its inhibiter is benzotriazole (BTA), mercapto benzothiazole (MBT), tolyltriazole (TTA), the embodiment of the invention is selected benzotriazole (BTA) for use.
The preparation method of the nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, its be earlier with the abrasive material II uniform dissolution of required weight in deionized water, then in the environment of thousand grades of decontamination chambers, under the power of negative pressure of vacuum, by mass flowmeter with in the dissolved abrasive material II liquid input pod jar, mix with the abrasive material I of required weight in the container tank and fully stir, all the other components with polishing fluid after mixing add fully stirring of continuation again in the container tank, and mixing promptly, preparation becomes the finished product polishing fluid.
In the preparation of the nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, the envrionment temperature of thousand grades of decontamination chambers is a normal temperature; Vacuum pressure is-10
5To 0Mpa, embodiment of the invention employing-0.1MPa vacuum pressure.
Embodiment 1:
Take by weighing the water-soluble silicon dioxide gel of 30 gram 10nm, 5 gram 120nm aerosil powder, the 0.2 gram polymerization degree is 20 fatty alcohol-polyoxyethylene ether, 3 gram potassium hydroxide, 0.5 gram benzotriazole (BTA) and 61 gram deionized waters, standby.
Restrain aerosil powder uniform dissolution in the deionized waters of 61 grams with 5 earlier, then in the environment of thousand grades of decontamination chambers, under the normal temperature condition, under 0.1MPa negative pressure of vacuum power, by mass flowmeter with in the aerosil powder aqueous solution input pod jar, mix and fully stirring with the water-soluble silicon dioxide gel that is placed in advance in the container tank, to be mixed evenly after with 0.2 gram fatty alcohol-polyoxyethylene ether (O-20), 3 gram potassium hydroxide and 0.5 gram benzotriazole (BTA) add in the container tank and continuation is fully stirred, and mixing promptly becomes polishing fluid finished product of the present invention.
Experiment effect is analyzed: utilize above-mentioned polishing fluid, press the 1:20 dilution with deionized water, use wind and thunder C6382I/JY type polishing machine, at pressure 100g/cm
2, the polishing disk rotating speed is under the condition of 50rpm, flow 900ml/min, zinc and chromium disc were polished 8 minutes, utilize XRF1020 thickness measuring system (XRF-2000H that MICROPIONEER company produces) to measure the remaining film thickness difference in polishing front and back, trying to achieve average removal rate is 380nm/min, utilizes contourgraph (the Newview6000 series of Zego company) to record this zinc in the area of 550nm * 410nm and chromium disc surface roughness is 0.4nm.
Embodiment 2:
Take by weighing the water-soluble silicon dioxide gel of 25 gram 30nm, 15 gram 80nm aerosil powder, 0.3 gram anhydrous sorbitol polyoxyethylene ether-ester (T-80), 1 gram Tetramethylammonium hydroxide, 2.7 gram benzotriazoles (BTA) and 56 gram deionized waters are standby.
Restrain aerosil powder uniform dissolution in the deionized waters of 56 grams with 15 earlier, then in the environment of thousand grades of decontamination chambers, under the normal temperature condition, under 0.1Mpa negative pressure of vacuum power, by mass flowmeter with in the aerosil powder aqueous solution input pod jar, mix and fully stirring with the 25 water-soluble silicon dioxide gels that are placed in advance in the container tank, to be mixed evenly after with 0.3 gram anhydrous sorbitol polyoxyethylene ether-ester (T-80), 1 gram Tetramethylammonium hydroxide and 2.7 gram benzotriazoles (BTA) add in the container tank and continuation is fully stirred, and mixing promptly becomes polishing fluid finished product of the present invention.
Experiment effect is analyzed: utilize above-mentioned polishing fluid, press the 1:20 dilution with deionized water, use wind and thunder C6382I/JY type polishing machine, at pressure 100g/cm
2, the polishing disk rotating speed is under the condition of 50rpm, flow 900ml/min, zinc and chromium disc were polished 8 minutes, utilize XRF1020 thickness measuring system (XRF-2000H that MICROPIONEER company produces) to measure the remaining film thickness difference in polishing front and back, trying to achieve average removal rate is 410nm/min, utilizes contourgraph (the Newview6000 series of Zego company) to record this zinc in the area of 550nm * 410nm and chromium disc surface roughness is 0.45nm.
The nano-silicon dioxide abrasive material polishing solution of zinc of the present invention and chromium processing usefulness, the abrasive material I that selects for use is the less water-soluble silicon dioxide gel of particle diameter, and it has dispersed preferably, even particle size distribution, the surface tear behind zinc and the chrome polish be can effectively reduce, zinc and chromium surface roughness reduced simultaneously; Selecting abrasive material II for use is the bigger aerosil powder of particle diameter, and it can effectively improve polishing speed, enhances productivity; The tensio-active agent of selecting for use is a nonionic surface active agent, as fatty alcohol-polyoxyethylene ether or polyvalent alcohol polyoxyethylene ether carboxylate, the homogeneity of polishing in the course of processing can be effectively controlled in the adding of this nonionic surface active agent, reduces surface imperfection, and improves polishing efficiency; Add the stability that the pH value conditioning agent can guarantee polishing fluid in this polishing fluid, reduce corrosion, also can play the effect that improves polishing speed equipment; The speed in the polishing process can be effectively controlled in the adding of inhibiter, and the adjusting process condition obtains different polishing speeds as requested.
Therefore the advantage that has of the present invention is: with the bigger aerosil powder mixes of the less water-soluble silicon dioxide gel of particle diameter and particle diameter as abrasive material, both improved the dispersing property of abrasive material, reduce polishing back zinc and chromium surface and scratch, and the zinc after the polishing and the roughness of chromium surface are reduced; In addition, can improve polishing speed greatly; Moreover polishing fluid of the present invention is an alkalescence, does not produce acid mist in the polishing process, help the healthy of situ production workman, and chemical stability is good, etching apparatus not, the safety performance ideal of use.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (10)
1. the nano-silicon dioxide abrasive material polishing solution of zinc and chromium processing usefulness comprises abrasive material I, abrasive material II, tensio-active agent, PH conditioning agent and deionized water; It is characterized in that: the shared weight percent of various components is: abrasive material I is 10% to 40%, and abrasive material II is 5% to 20%, and tensio-active agent is 0.01% to 0.6%, and the PH conditioning agent is 1% to 6%,, inhibiter is 0.01% to 5%, deionized water is a surplus.
2. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 1 and chromium processing usefulness, it is characterized in that: described abrasive material I is that particle diameter is 5 to 100nm water-soluble silicon dioxide gel; Described abrasive material II is that particle diameter is 5 to 200nm aerosil powder.
3. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 2 and chromium processing usefulness, it is characterized in that: the particle diameter of described abrasive material I preferred 10 is to 80nm; The particle diameter of described abrasive material II preferred 50 is to 150nm.
4. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 1 and chromium processing usefulness, it is characterized in that: described tensio-active agent is a nonionic surface active agent.
5. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 4 and chromium processing usefulness, it is characterized in that: described nonionic surface active agent is fatty alcohol-polyoxyethylene ether or polyvalent alcohol polyoxyethylene ether carboxylate.
6. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 1 and chromium processing usefulness, it is characterized in that: described pH value conditioning agent is mineral alkali, organic bases or their combination.
7. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 6 and chromium processing usefulness, it is characterized in that: described mineral alkali is a potassium hydroxide, sodium hydroxide or peroxide trisodium phosphate; Described organic bases is a kind of in many hydroxyls polyamines and the amine or their combination.
8. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 7 and chromium processing usefulness, it is characterized in that: described many hydroxyls polyamines is trolamine, THED tetrahydroxy ethylene diamine or hexahydroxy-propyl group propylene diamine; Described amine is quadrol, N,N-DIMETHYLACETAMIDE, pivalyl amine or tetramethyl-oxyammonia.
9. the nano-silicon dioxide abrasive material polishing solution of zinc according to claim 1 and chromium processing usefulness, it is characterized in that: described inhibiter is benzotriazole (BTA), mercapto benzothiazole (MBT), tolyltriazole (TTA).
10. the preparation method of the nano-silicon dioxide abrasive material polishing solution of zinc as claimed in claim 1 and chromium processing usefulness, it is characterized in that, earlier with the abrasive material II uniform dissolution of required weight in deionized water, then in the environment of thousand grades of decontamination chambers, under the power of negative pressure of vacuum, by mass flowmeter with in the dissolved abrasive material II liquid input pod jar, mix with the abrasive material I of required weight in the container tank and fully stir, all the other components with polishing fluid after mixing add fully stirring of continuation again in the container tank, mix and promptly are prepared into the finished product polishing fluid; The envrionment temperature of described thousand grades of decontamination chambers is a normal temperature; Vacuum pressure is-10
5To 0Mpa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100261675A CN101368069A (en) | 2007-08-16 | 2007-08-16 | Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100261675A CN101368069A (en) | 2007-08-16 | 2007-08-16 | Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101368069A true CN101368069A (en) | 2009-02-18 |
Family
ID=40412071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100261675A Pending CN101368069A (en) | 2007-08-16 | 2007-08-16 | Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101368069A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073170A (en) * | 2014-06-24 | 2014-10-01 | 江苏天恒纳米科技股份有限公司 | Special nano slurry for ultraprecise machining of surface of aluminum alloy and preparation method thereof |
| CN104109482A (en) * | 2014-06-27 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Aluminium alloy polishing solution and preparation method thereof |
| CN105970255A (en) * | 2016-06-24 | 2016-09-28 | 武汉吉和昌化工科技股份有限公司 | Complexing agent electroplated with bright zinc-nickel alloys and preparation method of complexing agent |
| CN108531087A (en) * | 2018-06-13 | 2018-09-14 | 李秋菊 | A kind of antifreeze polishing liquid and preparation method thereof |
-
2007
- 2007-08-16 CN CNA2007100261675A patent/CN101368069A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073170A (en) * | 2014-06-24 | 2014-10-01 | 江苏天恒纳米科技股份有限公司 | Special nano slurry for ultraprecise machining of surface of aluminum alloy and preparation method thereof |
| CN104073170B (en) * | 2014-06-24 | 2015-11-18 | 江苏天恒纳米科技股份有限公司 | A kind of aluminum alloy surface Ultra-precision Turning special-purpose nanometer slurry and preparation method thereof |
| CN104109482A (en) * | 2014-06-27 | 2014-10-22 | 河北宇天昊远纳米材料有限公司 | Aluminium alloy polishing solution and preparation method thereof |
| CN104109482B (en) * | 2014-06-27 | 2016-04-20 | 河北宇天昊远纳米材料有限公司 | A kind of aluminium alloy polishing fluid and preparation method thereof |
| CN105970255A (en) * | 2016-06-24 | 2016-09-28 | 武汉吉和昌化工科技股份有限公司 | Complexing agent electroplated with bright zinc-nickel alloys and preparation method of complexing agent |
| CN108531087A (en) * | 2018-06-13 | 2018-09-14 | 李秋菊 | A kind of antifreeze polishing liquid and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101368272A (en) | Aluminum and aluminum alloy material polishing solution | |
| US20170349788A1 (en) | Polydisperse large-particle-size silica sol and method of preparing the same | |
| CN101368070A (en) | Nano-silicon dioxide abrasive material polishing solution for processing crystallizing glass | |
| CN102796460B (en) | Silicon dioxide-based CMP (Chemical Mechanical Polishing) solution and preparation method thereof | |
| CN101386987A (en) | Chemical brightening solution for stainless steel | |
| CN101368069A (en) | Nano-silicon dioxide abrasive material polishing solution for processing zinc and chromium | |
| CN113444456A (en) | Polishing solution for stainless steel surface processing, preparation method and polishing process | |
| CN103937413A (en) | Aluminum oxide polishing solution for alloy polishing and preparation method thereof | |
| CN101307211A (en) | Method for preparing nanometer silicon dioxide abradant polishing solution | |
| CN103194148B (en) | Chemical-mechanical polishing aqueous composition and use thereof | |
| CN104342704A (en) | Oxidizing agent-free alkaline aluminum alloy polishing liquid and preparation method thereof | |
| CN105505316A (en) | Grinding auxiliary and grinding liquid for coarse grinding of sapphire and preparation methods of grinding auxiliary and grinding liquid | |
| CN102911606A (en) | Sapphire polishing solution and preparation method thereof | |
| CN101353556A (en) | Polishing solution for aluminum alloy | |
| CN103276397A (en) | Environmentally-friendly interprocess aqueous antirust liquid and preparation method thereof | |
| CN102372273A (en) | Silica sol with double grain diameters and preparation method thereof | |
| CN102618174A (en) | Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability | |
| CN101781524A (en) | Wafer precise polishing solution | |
| CN104559799A (en) | Chemically mechanical polishing solution containing composite milling material | |
| CN101368068A (en) | Nano-silicon dioxide abrasive material polishing solution for polishing copper | |
| CN108300330A (en) | A kind of ceramic wafers surface polishing slurries and preparation method thereof | |
| CN101368274A (en) | Steel antirust agent | |
| CN115216224A (en) | Sapphire polishing solution and preparation method and application thereof | |
| CN110951402A (en) | Copper chemical mechanical polishing solution and preparation method thereof | |
| CN101353796A (en) | Polishing solution for magnesium alloy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090218 |