CN101364627B - Manufacturing method of LED - Google Patents
Manufacturing method of LED Download PDFInfo
- Publication number
- CN101364627B CN101364627B CN200710143527XA CN200710143527A CN101364627B CN 101364627 B CN101364627 B CN 101364627B CN 200710143527X A CN200710143527X A CN 200710143527XA CN 200710143527 A CN200710143527 A CN 200710143527A CN 101364627 B CN101364627 B CN 101364627B
- Authority
- CN
- China
- Prior art keywords
- chip
- metal layer
- electric circuit
- circuit metal
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to a method for producing LEDs, in particular to a method for producing LEDs, which can assist in the heat dissipation of chips and increase the light utilization efficiency. The method comprises the following technological processes: attaching a circuit metal layer which is subjected to the etching processing operation to the surface of a base plate with high heat conduction efficiency; further covering the circuit metal layer with a solder-mask protecting film layer, and exposing a required wire solder area; carrying out the high-reflection surface operation in the position therein for placing a chip, so as to form an implanting area and further fixedly implant an LED chip in the implanting area; electrically connecting the chips to the welding spots of the wire solder area via conducting wires respectively; carrying out the processing operations of applying colloids to the surface of the entire base late, including the implanting area and the wire solder area, so as to complete the chip wiring of the LEDs; and carrying out the subsequent processing operation of packaging the LEDs, thereby achieving the purposes of ensuring good heat dissipation effect and enhancing the light extraction effect of the light reflectivity, and further gaining the practical effectiveness of the LEDs.
Description
Technical field
What the present invention relates to is a kind of manufacturing method for LED, but refer to companion chip quick heat radiating and the manufacture method that improves the light reflection performance especially, the metal level companion chip of planting the crystalline region for utilization reaches the heat radiation of horizontal proliferation and passes through its high reflecting surface with the raising light utilization efficiency, and the practical usefulness of the light-emitting diode bright dipping that can gain.
Background technology
Press, because it is high-tech flourish now, many sci-tech products all have quite remarkable function, no matter be in the work or in the daily life, sci-tech product provide the user when using product fast with convenient, also lead people to enjoy the comfortable life that sci-tech product brings, in sci-tech product miscellaneous, generally be equiped with chip encapsulation assembly, with the function of gain product, traditional die is adopted direct encapsulation (Chip On Board; Be called for short COB); it is a kind of mode of integrated circuit encapsulation; it directly pastes, is encapsulated in bare chip on the tellite; and be combined with three basic processing procedures: chip is planted admittedly, lead connection, sealing protection etc.; can be effectively with the packaging and testing step in the IC manufacture process; directly transfer to the circuit board assembling stage; this encapsulation technology is the surface mount technology of miniaturization in fact; as for electrical conductivity part then be utilize lead with the contact bonding wire of chip to the contact of circuit board or substrate; form circuit communication, the outside is used the sealing technology again and is covered.
And direct encapsulation (COB) structure of traditional die; if be encapsulated as example with luminescence chip; see also shown in Figure 7; side cutaway view for existing luminescence chip encapsulation; it is positioned chip A on the solid brilliant position B1 of anti-welding protective layer of metal substrate B (aluminium base or copper base); and by the last lead A1 that connects of chip A; the weld pad B2 of A2 to the insulating barrier B4; B3; again at metal substrate B surface encapsulation jelly C; encapsulate and finish luminescence chip A; and there is no the structure of auxiliary heat dissipation arround the chip A; cause heat-sinking capability to reduce, and allow the continuous accumulation of heat of chip A and influence reliability of products.
And as shown in Figure 8, side cutaway view for another existing luminescence chip encapsulation, it directly is positioned the hole B5 that chip A passes insulating barrier B4 on the metal substrate B, and by being connected with lead A1, A2 on the chip A to weld pad B2, B3, at chip A outer package jelly C, promptly finish another luminescence chip A encapsulation, though the heat that chip A can be produced is passed on the metal substrate B surface reflection ability.
(1) chip A is implanted on the solid brilliant position B1 of anti-welding protective layer admittedly; when luminous, the heat that it produced is difficult for row looses, only have partly heat energy in vertical mode through metal substrate B to outdiffusion; make chip A raise, influence its usefulness and useful life because of weak heat-dissipating causes temperature.
(2) chip A is implanted in down the circular hole that digs to metal substrate B admittedly, when it is luminous because of the poor designs of auxiliary its reflection ray, cause the light of chip A to be absorbed by metal mostly or scattering after be trapped in rough surface, and can't improve brightness, and the bright dipping weak effect.
Therefore, considerations such as the unitary construction design that, quick heat radiating good at heat conduction, luminosity improve and manufacture method are the direction place that the relevant manufacturer that is engaged in this industry desires most ardently the research improvement.
The inventor is because above-mentioned defective, by collecting related data, via assessment and consideration in many ways, and to be engaged in the many years of experience in the industry accumulation, via constantly studying and revise, the beginning is designed can the gain patent of invention of manufacturing method for LED of luminosity of this kind.
Summary of the invention
Main purpose of the present invention is, a kind of manufacturing method for LED is provided, in order to overcome above-mentioned defective.
For achieving the above object, the technical solution used in the present invention is, a kind of manufacturing method for LED is provided, and instigates the described diode of giving out light to have the manufacture method that good heat radiating function also can improve luminous reflectivity especially, and the flow process of its manufacture method is:
(1) on the surface of the substrate of a tool height heat conduction usefulness, sets up a heat conduction good insulation performance layer;
(2) on described insulating barrier, set firmly electric circuit metal layer again;
(3) electric circuit metal layer of described substrate top carries out the etching and processing operation, forms the wire welding area that exposes substrate surface, and at the reserve area of the electric circuit metal layer of solid hair transplant luminous diode chip position, will not etching removes promptly to be made as and plant the crystalline region;
(4) high light reflectivity surface treatment operation is carried out on described surface of planting the crystalline region;
(5) consolidate the hair transplant luminous diode chip in the crystalline region described planting;
(6) on chip, utilize lead to be electrically connected to wire welding area respectively;
(7) finish the chip wiring of light-emitting diode, wherein,
Described substrate is a height thermal energy conduction material, and height thermal energy conduction material is the non-metallic material of metal material or the high heat conduction usefulness of tool;
The anti-welding protective film that described electric circuit metal layer surface coated adularescent is, it is high heat conducting paint vehicle of tool or sizing material;
The electric circuit metal layer of described chip position below plant the crystalline region, its area is at least five times of chip area.
Beneficial effect of the present invention compared with the prior art is, it will set up circuit layer at the substrate surface of heat conduction usefulness, on electric circuit metal layer, form more than one at least wire welding area again with the etching and processing operation, and carry out high reflecting surface operation formation on the electric circuit metal layer of wire welding area periphery and plant the crystalline region, can in planting the crystalline region, consolidate the hair transplant luminous diode chip, and utilize lead that chip is electrically connected respectively to the solder joint of wire welding area, again with the monolith substrate surface, contain and plant the crystalline region, wire welding area is coated with the processing operation of jelly, to finish the Chip Packaging of light-emitting diode, and it is good to reach heat radiation, improve the purpose that light effect of light reflectivity, and the practical usefulness of the light-emitting diode that can gain.
Description of drawings:
Fig. 1 is a manufacture method flow chart of the present invention;
Fig. 2 is a three-dimensional exploded view of the present invention;
Fig. 3 is a stereo appearance figure of the present invention;
Fig. 4 is the A-A ' profile of Fig. 3 of the present invention;
Fig. 5 is a vertical view of the present invention;
Fig. 6 is the side cutaway view of preferred embodiment of the present invention;
Fig. 7 is the side cutaway view of existing luminescence chip encapsulation;
Fig. 8 is the side cutaway view of another existing luminescence chip encapsulation.
Description of reference numerals: 1-substrate; The 2-insulating barrier; The 3-electric circuit metal layer; The 31-Copper Foil; 33-plants the crystalline region; The 32-wire welding area; The 4-chip; The 41-lead; The anti-welding protective film of 5-; The A-chip; The A1-lead; A2, lead; The B-metal substrate; The solid brilliant position of the anti-welding protective layer of B1-; B4, insulating barrier; The B2-weld pad; The B5-hole; The B3-weld pad; C, jelly.
Embodiment
For reaching above-mentioned purpose and effect, the technology used in the present invention means and structure thereof, drawing now illustrates in detail that with regard to preferred embodiment of the present invention its feature and function are as follows, profit is understood fully.
See also Fig. 1-shown in Figure 3; be manufacture method flow chart of the present invention, three-dimensional exploded view, stereo appearance figure; find out by knowing shown in the figure; manufacturing method for LED of the present invention; at least include substrate 1, high heat conduction insulating barrier 2, electric circuit metal layer 3, chip 4, anti-welding protective film 5 etc. and form, the flow process of its manufacture method can be:
(100) will have the highly substrate 1 of heat conduction usefulness, set up heat conduction good insulation performance layer 2 on its surface.
(101) on insulating barrier 2, set firmly preinstalled circuit layout circuit metal level 3 again, and electric circuit metal layer 3 materials mostly are Copper Foil 31.
(102) electric circuit metal layer 3 of substrate 1 top carries out the etching and processing operation, forms to expose the wire welding area 32 on substrate 1 surface, and is positioned at the zone of the solid hair transplant luminous diode chip position of wire welding area 32 peripheries, promptly is made as and plants crystalline region 33.
(103) then can carry out high light reflectivity surface-treated processing operation on the surface of planting crystalline region 33.
(104) and on the surface of electric circuit metal layer 3 plant on the crystalline region 33, Gu hair transplant luminous diode chip 4.
(105) on chip 4, utilize lead 41 to be electrically connected to respectively in the wire welding area 32.
(106) finish chip 4 wiring of light-emitting diode after, can carry out the processing operation of follow-up encapsulation.
The manufacture method of the invention described above, the employed substrate 1 of its light-emitting diode is the material of tool height heat conduction usefulness, promptly can be the non-metallic material of the high heat conduction usefulness of metal material or tool; And the electric circuit metal layer 3 on substrate 1, insulating barrier 2, utilize etching to form more than one at least wire welding area 32, and form on electric circuit metal layer 3 surface and to plant crystalline region 33, then can carry out the high light reflectivity surface treatment and process operation in modes such as planting crystalline region 33 utilization polishing processing, plating processing or sputter processing, and it electroplates the operation of processing, be to can be the electrodeposited coating that is in metal material electroplating surface silvery white, that the material that silvery white is then can be is silver-plated, chromium plating or electroplating activity such as aluminize.
In response to the difference of chip electrode distribution mode, plant that crystalline region 33 also can be coated with the white of a level and smooth high glaze, the rete of high heat conducting paint vehicle, anti-welding lacquer or sizing material; And outer substrate 1 surface coated of wire welding area there is the good anti-welding protective film 5 of heat conduction; then visual light-emitting diode chip for backlight unit 4 distribution of electrodes modes; it plants crystalline region 33 can keep original electric circuit metal layer 3 surfaces, or further is coated with the good anti-welding protective film 5 of heat conduction.
See also Fig. 3-shown in Figure 4; be stereo appearance figure of the present invention; A-A ' the profile of Fig. 3; can plant crystalline region 33 for what plant chip 4 admittedly in electric circuit metal layer 3 surperficial formation; described area of planting crystalline region 33 is at least five times of areas at chip 4; and plant the high light reflectivity surface treatment of crystalline region 33; it is the light that can reflect chip 4; the processing operation of anti-welding protective film 5 is set on the surface of substrate 1 again; be to be at electric circuit metal layer 3 surface coated adularescents; the high heat conducting paint vehicle of tool; the formed anti-welding protective film 5 of anti-welding lacquer or sizing material; and the high heat conducting paint vehicle of anti-welding protective film 5 tools; anti-welding lacquer or sizing material; for having aluminium oxide (Al2O3); zinc oxide (ZnO); the material of boron nitride (BN) and titanium dioxide compounds such as (TiO2); and form white is the anti-welding protective film 5 of pattern, and has the light effect that of good reflection ray.
See also Fig. 3-shown in Figure 5, A-A ' profile, vertical view for stereo appearance figure of the present invention, Fig. 3, find out by knowing shown in the figure, light-emitting diode chip for backlight unit 4 of the present invention, be to be implanted in admittedly on the Copper Foil 31 of electric circuit metal layer 3, then can be because of the luminous heat energy that produces when chip 4 uses, the heat energy of chip 4 generations is passed through the Copper Foil 31 of electric circuit metal layer 3, around horizontal court, spread heat energy, reach heat radiation function fast with companion chip 4, and can prevent effectively that chip 4 from influencing its effective utilization because of heat energy gathers; And formed wire welding area 32 on the electric circuit metal layer 3; plant crystalline region 33; again at wire welding area 32; plant the outer periphery of crystalline region 33; for being coated with anti-welding protective film 5; the paint vehicle by anti-welding protective film 5 then; the white that anti-welding lacquer or sizing material added is high heat conduction element; except assisting chip 4 heat radiations of planting crystalline region 33; and can be when chip 4 be luminous; to plant the high light reflectivity surface treatment of crystalline region 33; cooperate anti-welding protective film 5 and form good light reflection performance; the luminous outside that reflects with chip 4; and can improve the luminous utilance of chip 4; promote the bright dipping effect; to promote the practical effect of light-emitting diode; prolong its useful life, and also meet economic benefit.
See also Fig. 3 again; Fig. 5; Figure 6 shows that stereo appearance figure of the present invention; vertical view; the side cutaway view of preferred embodiment; find out by knowing shown in the figure; substrate 1 of the present invention; electric circuit metal layer 3 on the insulating barrier 2; for utilizing etched processing mode; make single wire welding area 32; and keep wire welding area 32 outer consolidate the electric circuit metal layer 3 of planting chip position; form at least five times and plant crystalline region 33 at chip 4 areas; and plant crystalline region 33 and carry out the high light reflectivity surface treatment; then planting after crystalline region 33 plants chip 4 admittedly; utilize the solder joint of chip 4 to be connected electrically in wire welding area 32 with lead 41; surface coated at monolith substrate 1 has anti-welding protective film 5 again; the paint vehicle by anti-welding protective film 5 then; the contained white of anti-welding lacquer or sizing material is high thermally conductive compound; except assisting chip 4 heat radiations of planting crystalline region 33; and can be when chip 4 be luminous; to plant the high light reflectivity surface treatment of crystalline region 33; cooperate anti-welding protective film 5 and form good light reflection performance; the light of chip 4 is reflected the outside, and can improve the luminous utilance of chip 4; make bright dipping also have an effect.
Be with; the manufacturing method for LED of the invention described above; it is the Copper Foil 31 of electric circuit metal layer 3 on substrate 1; formation is planted crystalline region 33 can supply to plant chip 4; and plant crystalline region 33 and utilize the high light reflectivity surface treatment; and can be further in the anti-welding protective film 5 of substrate 1 surface coated; and energy companion chip 4 quick heat radiatings; improve the purpose of luminosity; non-so promptly limit to claim of the present invention; only need make chip 4 have the usefulness of horizontal proliferation heat extraction at Copper Foil 31; the high light reflectivity surface treatment that can be by planting crystalline region 32 when chip 4 is luminous and the white of anti-welding protective film 5 are; the common good reflection light that produces go out light characteristic; tool good heat radiating effect in the time of can making chip 4 luminous; and the reflection performance of its luminous utilance that gains; use effect with effective lifting chip 4; so the simple and easy modification and the equivalent structure that use specification of the present invention and graphic content to do such as change, and all should in like manner be included in the claim of the present invention, close and give Chen Ming.
The manufacturing method for LED of the invention described above when reality is used, for having following advantage, as:
When (one) chip 4 is luminous, Copper Foil 31 that can be by electric circuit metal layer 3 with the row of horizontal proliferation formula dispel the heat can, and utilize the high conduction of heat materials of tool such as substrate 1, anti-welding protective film 5, companion chip 4 heat radiations, and make chip 4 have good heat dissipation.
(2) crystalline region 33 of planting of electric circuit metal layer 3 is by the high light reflectivity surface treatment; the white of substrate 1 surface coated of arranging in pairs or groups again is anti-welding protective film 5; and has good light reflection performance; can be when chip 4 be luminous; by planting crystalline region 33 and anti-welding protective film 5 auxiliary reflection rays; to improve the luminous utilance of chip 4, its light emitting efficiency gains.
(3) chip 4 has good heat radiation effectiveness, and can produce the luminous reflection performance of gain, and can promote the practical effect of light-emitting diode, also can increase its useful life, also meets economic benefit.
So; the present invention is primarily aimed at the heat radiation of the chip of light-emitting diode, the manufacture method of high light reflectivity; and can utilize the copper-clad surface companion chip diffusion heat extraction of circuit layer on the substrate, be that can to reflect light be main key protection point to anti-welding protective film with the high light reflectivity surface treatment with can further being coated with white; be the heat energy that only chip is produced when luminous; via copper-clad surface and anti-welding protective film auxiliary heat dissipation; and the white of utilizing anti-welding protective film to add is material, reaches to improve that light reflectivity, gain are luminous, the advantage of light emitting efficiency.
In sum, the above-mentioned manufacturing method for LED of the present invention is being implemented, when using, for reaching its effect and purpose really, so the present invention really is the invention of a practicality excellence, for meeting the application important document of patent of invention, is being filed an application in accordance with the law.
The above only is preferred embodiment of the present invention, only is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art is understood, and can carry out many changes to it in the spirit and scope that claim of the present invention limited, revise, even equivalence, but all will fall within the scope of protection of the present invention.
Claims (3)
1. manufacturing method for LED, it is the manufacture method of instigating described light-emitting diode to have good heat radiating function and can improve luminous reflectivity, it is characterized in that: the flow process of its manufacture method is:
(1) on the surface of the substrate of a tool height heat conduction usefulness, sets up the insulating barrier of a tool heat-conductive characteristic;
(2) on described insulating barrier, set firmly electric circuit metal layer again;
(3) electric circuit metal layer of described substrate top carries out the etching and processing operation, forms the wire welding area that exposes substrate surface, and at the reserve area of the electric circuit metal layer of solid hair transplant luminous diode chip position, will not etching removes promptly to be made as and plant the crystalline region;
(4) high light reflectivity surface treatment operation is carried out on described surface of planting the crystalline region;
(5) consolidate the hair transplant luminous diode chip in the crystalline region described planting;
(6) on chip, utilize lead to be electrically connected to wire welding area respectively;
(7) finish the chip wiring of light-emitting diode, wherein,
Described substrate is a height thermal energy conduction material, and height thermal energy conduction material is the non-metallic material of metal material or the high heat conduction usefulness of tool;
The anti-welding protective film that described electric circuit metal layer surface coated adularescent is, it is high heat conducting paint vehicle of tool or sizing material;
The electric circuit metal layer of described chip position below plant the crystalline region, its area is at least five times of chip area.
2. according to the described manufacturing method for LED of claim 1, it is characterized in that: high heat conducting paint vehicle of described tool or sizing material, for having the material of aluminium oxide, zinc oxide, boron nitride and titanium dioxide compound.
3. according to the described manufacturing method for LED of claim 1, it is characterized in that: described electric circuit metal layer utilizes the etching and processing operation, forms at least two wire welding areas that expose substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710143527XA CN101364627B (en) | 2007-08-07 | 2007-08-07 | Manufacturing method of LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710143527XA CN101364627B (en) | 2007-08-07 | 2007-08-07 | Manufacturing method of LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101364627A CN101364627A (en) | 2009-02-11 |
| CN101364627B true CN101364627B (en) | 2010-04-07 |
Family
ID=40390883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710143527XA Expired - Fee Related CN101364627B (en) | 2007-08-07 | 2007-08-07 | Manufacturing method of LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101364627B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5499325B2 (en) * | 2009-06-01 | 2014-05-21 | 東芝ライテック株式会社 | Light emitting module and lighting device |
| EP2628194B8 (en) * | 2010-10-12 | 2018-08-29 | Lumileds Holding B.V. | Method of manufacturing a light emitting device |
| CN102468406B (en) * | 2010-11-19 | 2014-11-05 | 展晶科技(深圳)有限公司 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
| CN102130283B (en) * | 2011-02-22 | 2012-07-18 | 史杰 | LED chip encapsulation bracket |
| CN102606937B (en) * | 2012-03-13 | 2014-03-26 | 深圳市华星光电技术有限公司 | Light emitting diode (LED) lamp strip and backlight module |
| CN104241498A (en) * | 2013-06-19 | 2014-12-24 | 江苏稳润光电有限公司 | Novel LED packaging structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1934718A (en) * | 2004-03-17 | 2007-03-21 | 陶氏康宁东丽株式会社 | Metal base circuit substrate for an optical device and method manufacturing the aforementioned substrate |
| CN101005733A (en) * | 2006-12-29 | 2007-07-25 | 上海芯光科技有限公司 | Method for producing thin semiconductor lighting plane integrated optic source module |
-
2007
- 2007-08-07 CN CN200710143527XA patent/CN101364627B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1934718A (en) * | 2004-03-17 | 2007-03-21 | 陶氏康宁东丽株式会社 | Metal base circuit substrate for an optical device and method manufacturing the aforementioned substrate |
| CN101005733A (en) * | 2006-12-29 | 2007-07-25 | 上海芯光科技有限公司 | Method for producing thin semiconductor lighting plane integrated optic source module |
Non-Patent Citations (3)
| Title |
|---|
| JP特开2001-332768A 2001.11.30 |
| JP特开2004-146411A 2004.05.20 |
| JP特开2007-165937A 2007.06.28 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101364627A (en) | 2009-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102751272B (en) | Semiconductor luminous assembly and manufacture method thereof | |
| CN203205453U (en) | Semiconductor light-emitting chip and semiconductor lighting lamp | |
| CN101364627B (en) | Manufacturing method of LED | |
| US8067777B2 (en) | Light emitting diode package assembly | |
| CN101050846B (en) | Method for producing flexible light source and flexible base board and flexible solid state light source | |
| CN104282819B (en) | Flip-over type LED encapsulation module and its manufacturing method | |
| KR101255121B1 (en) | Lighting emitting diode package and Method for manufacturing the same | |
| CN102983256B (en) | LED package | |
| CN201348169Y (en) | White light-emitting diode (LED) integrated array light source encapsulated based on chip-on-board (COB) technology | |
| CN102693972A (en) | Light emitting diode package and manufacture method of lead frame of the light emitting diode package | |
| TW201110421A (en) | LED package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same | |
| CN102054924A (en) | Package substrate for optical element and method of manufacturing the same | |
| CN102315372A (en) | Light-emitting module and illumination device | |
| CN202957287U (en) | Packaging structure of semiconductor light-emitting element | |
| CN102790140B (en) | Packaging structure and manufacturing method thereof | |
| CN103199173A (en) | Light emitting diode chip, packaging substrate, packaging structure and manufacturing method thereof | |
| CN103325778B (en) | Light-emitting device and ligthing paraphernalia | |
| KR20100089115A (en) | Method of manufacturing light emitting diode unit and light emitting diode unit manufactured by the method | |
| CN104465973B (en) | A kind of wafer-level encapsulation method of semiconductor devices | |
| CN102054905A (en) | Light emitting diode chip with heat conducting layers | |
| CN104393161A (en) | Wafer level package structure for semiconductor device | |
| CN203707127U (en) | COB packaging structure with low thermal resistance and high luminous efficiency | |
| US20120113630A1 (en) | Led energy-saving lamp | |
| CN103367343A (en) | Light-emitting module | |
| WO2016184372A2 (en) | Led light source assembly, led photoelectric integration module, and led spotlight |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: ALFA PHOTON SCIENCE CO., LTD. Free format text: FORMER OWNER: LI KEXIN Effective date: 20090807 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20090807 Address after: Taipei City, Taiwan, China Applicant after: Alpha Photonitek Corporation Address before: Taipei County, Taiwan, China Applicant before: Lee Kexin Co-applicant before: Sun Zengbao |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100407 Termination date: 20120807 |