CN101363798A - Laser femtosecond probe device - Google Patents
Laser femtosecond probe device Download PDFInfo
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- CN101363798A CN101363798A CNA2008100409925A CN200810040992A CN101363798A CN 101363798 A CN101363798 A CN 101363798A CN A2008100409925 A CNA2008100409925 A CN A2008100409925A CN 200810040992 A CN200810040992 A CN 200810040992A CN 101363798 A CN101363798 A CN 101363798A
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Abstract
The invention relates to a laser femtosecond probe device which adopts the structure that a beam splitting sheet is arranged in the main optical path, the beam splitting sheet splits the incident laser beam into transmissive probe light beam and reflected main light beam, a first convex lens, a small aperture, a second convex lens, doubling frequency crystal, a corner cube mirror and a reflector which are confocal are arranged along the probe light beam, the first convex lens and the second convex lens are confocal, the zoom ratio thereof is 5: 1, the small aperture is positioned on the common focus of the first convex lens and the second convex lens, the corner cube mirror is composed of two reflectors which form an angle of 90 degree, and is fixed on a one-dimensional translation stage, the moving shaft of which is parallel to the incident laser beam, and the reflector is provided with a film layer which can realize high transmission to basic frequency laser and high reflection to doubling frequency probe light. The laser femtosecond probe device has the advantages that the adjustment is simple, the quality of the output light is high, and the interference with the main laser can be avoided.
Description
Technical field
The present invention relates to the detection of ultrafast process, particularly a kind of laser femtosecond probe electro-optical device.
Background technology
Along with the development of the chirped pulse amplification of laser, the output peak power of mesa surface laser obtains greatly to improve, and reaches to clap watts (10
15W) magnitude focuses on power density and can reach 10
22W/cm
2, laser and matter interaction have produced many new phenomenons, understand its mechanism in depth and play crucial effects to understanding these new phenomenons.
Summary of the invention
For the ultrafast process of laser and matter interaction is surveyed, provide a kind of laser femtosecond probe electro-optical device.Probe light and main laser that this device produces are synchronous, and pulsewidth can reach the femtosecond magnitude, has simple in structure and convenience operation.
Technical solution of the present invention is as follows:
A kind of laser femtosecond probe device, characteristics are that its formation comprises: at main optical path one beam splitting chip is set, this beam splitting chip is divided into the probe beam of transmission and the main beam of reflection with the laser beam of incident, along probe beam the first confocal convex lens are set, aperture, second convex lens, frequency-doubling crystal, corner cube mirror and catoptron, described first convex lens and second convex lens are confocal, its focal distance ratio is 5:1, described aperture is positioned on the public focus of described first convex lens and second convex lens, described right angle reflector is made of two catoptrons that are mutually 90 °, and be fixed on a shifting axle and be parallel on the one dimension translation stage of incident beam, described catoptron has basic frequency laser high thoroughly to the high anti-rete of frequency multiplication probe light.
Described beam splitting chip is a two sides plating deielectric-coating, and the front surface deielectric-coating is 90% to the reflectivity of laser, and the rear surface is 99.7% to the transmitance of laser.
The confocal point of described first convex lens and second convex lens, focus can dwindle and the light beam of outgoing still is directional light beam diameter between two mirrors, and two lens all are the high transmission film of two-sided plating to main laser.
Described frequency-doubling crystal is a lbo crystal, and crystal cuts according to matching angle.
Described right angle reflector is made of two catoptrons that are mutually 90 °, and it is 99% rete that two mirrors all are coated with the frequency doubled light reflectivity.
Described catoptron is coated with the frequency doubled light reflectivity greater than 95%, and to the fundamental frequency light transmission rate greater than 99% rete.
Characteristics of the present invention are:
1, be used for superpower ultrafast laser field, this method can obtain the probe light of femtosecond magnitude, and the energy detecting material is by the evolutionary process of laser ionization.
2, the radio-frequency component of usage space wave filter energy elimination light beam spatial frequency improves the probe light quality.
3, use double-frequency laser as probe light, can avoid probe light in use to be subjected to the interference (produce and interfere) of main optical path laser.
4, use the method for fundamental frequency probe light to compare with other, because the plasma that frequency multiplication probe light is produced by laser ionization material has bigger penetration depth, this method may detect the more inner structure of multiple plasma.
Description of drawings
The index path of Fig. 1 laser femtosecond probe of the present invention electro-optical device.
Fig. 2 is the example application of laser femtosecond probe electro-optical device of the present invention in practical laser is practiced shooting.
Embodiment
The present invention will be further described below in conjunction with embodiment and accompanying drawing, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, the index path of Fig. 1 laser femtosecond probe of the present invention electro-optical device.As seen from the figure, the formation of laser femtosecond probe device of the present invention comprises: at main optical path beam splitting chip 1 is set, this beam splitting chip 1 is divided into the probe beam of transmission and the main beam of reflection with laser beam, along probe beam the first confocal convex lens 2 are set, aperture 3, second convex lens 4, frequency-doubling crystal 5, corner cube mirror 6 and catoptron 7, described first convex lens 2 and second convex lens 4 are confocal, described aperture 3 is positioned at the public focus of described first convex lens 2 and second convex lens 4, described right angle reflector 6 is made of two catoptrons that are mutually 90 °, and be fixed on a shifting axle and be parallel on the one dimension translation stage of incident beam, described catoptron 7 has basic frequency laser high thoroughly to the high anti-rete of frequency multiplication probe light.Described beam splitting chip 1 is two sides plating deielectric-coating, and the front surface deielectric-coating is 90% to the reflectivity of laser, and the rear surface is 99.7% to the transmitance of laser.Described first convex lens 2 and second convex lens, 4 confocal points, focus is between two mirrors, and its focal distance ratio is 5:1, can dwindle and the light beam of outgoing still is directional light beam diameter, and two lens all are the high transmission film of two-sided plating to main laser.Described frequency-doubling crystal 5 is a lbo crystal, and crystal cuts according to matching angle.Described right angle reflector 6 is made of two catoptrons that are mutually 90 °, and it is 99% rete that two mirrors all are coated with the frequency doubled light reflectivity.Described catoptron 7 is coated with the frequency doubled light reflectivity greater than 95%, and to the fundamental frequency light transmission rate greater than 99% rete.
Referring to Fig. 2, Fig. 2 is the example application of laser femtosecond probe electro-optical device of the present invention in practical laser is practiced shooting again.Light beam A is the output beam of fs-laser system, beam splitting chip 1 is divided into main beam C and probe beam B with laser A, light beam B is by the first confocal convex lens 2 and second convex lens 4 bundle that contracts, be placed with aperture 3 on the focus of two lens, carry out frequency multiplication by 5 pairs of light of frequency-doubling crystal then, frequency doubled light is used catoptron 7 elimination basic frequency laser compositions at last through corner cube mirror 6, obtains frequency multiplication probe beam D.
Main beam C interacts with solid target 12 through being focused on by convex lens 11 after three catoptrons 8,9,10.Solid target 12 is rectangular-shaped glass blocks, target surface and four side polishings.Probe light D sees through from the target side, makes target practice main optical path and probe light path synchronous by regulating right angle reflector 6.Target is ionized the plasma of generation and knows from experience absorbing detection laser, forms shade on the probe hot spot, and shade finally is imaged on the CCD15 by convex lens 13, and the 14th, catoptron.
Claims (6)
1. laser femtosecond probe device, be characterised in that its formation comprises: beam splitting chip (1) is set at main optical path, this beam splitting chip (1) is divided into the probe beam of transmission and the main beam of reflection with laser beam A, along probe beam confocal first convex lens (2) are set, aperture (3), second convex lens (4), frequency-doubling crystal (5), corner cube mirror (6) and catoptron (7), described first convex lens (2) and second convex lens (4) are confocal, its focal distance ratio is 5:1, described aperture (3) is positioned at the public focus of described first convex lens (2) and second convex lens (4), described right angle reflector (6) is made of two catoptrons that are mutually 90 °, and be fixed on a shifting axle and be parallel on the one dimension translation stage of incident beam, described catoptron (7) has basic frequency laser high thoroughly to the high anti-rete of frequency multiplication probe light.
2. the device of generation high-quality femtosecond probe light according to claim 1 is characterized in that described beam splitting chip (1) is two sides plating deielectric-coating, and the front surface deielectric-coating is 90% to the reflectivity of laser, and the rear surface is 99.7% to the transmitance of laser.
3. laser femtosecond probe device according to claim 1, it is characterized in that described first convex lens (2) and the confocal point of second convex lens (4), focus is between two mirrors, can dwindle and the light beam of outgoing still is directional light beam diameter, two lens all are the high transmission film of two-sided plating to main laser.
4, laser femtosecond probe device according to claim 1 is characterized in that described frequency-doubling crystal (5) is a lbo crystal, and crystal cuts according to matching angle.
5. laser femtosecond probe device according to claim 1 is characterized in that described right angle reflector (6) is made of two catoptrons that are mutually 90 °, and it is 99% rete that two mirrors all are coated with the frequency doubled light reflectivity.
6. laser femtosecond probe device according to claim 1 is characterized in that described catoptron (7) is coated with the frequency doubled light reflectivity greater than 95%, and to the fundamental frequency light transmission rate greater than 99% rete.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100409925A CN101363798A (en) | 2008-07-25 | 2008-07-25 | Laser femtosecond probe device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100409925A CN101363798A (en) | 2008-07-25 | 2008-07-25 | Laser femtosecond probe device |
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| CN101363798A true CN101363798A (en) | 2009-02-11 |
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| CNA2008100409925A Pending CN101363798A (en) | 2008-07-25 | 2008-07-25 | Laser femtosecond probe device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101890575A (en) * | 2010-07-14 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | Dammann grating-based femtosecond laser parallel micromachining device with real-time monitoring function |
| CN102661908A (en) * | 2012-04-27 | 2012-09-12 | 中国科学院上海光学精密机械研究所 | Single-beam femtosecond probe for diagnosing laser plasma parameters |
| CN113075789A (en) * | 2021-04-13 | 2021-07-06 | 南开大学 | Method and device for accurately adjusting incident light angle of optical reflection system |
-
2008
- 2008-07-25 CN CNA2008100409925A patent/CN101363798A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101890575A (en) * | 2010-07-14 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | Dammann grating-based femtosecond laser parallel micromachining device with real-time monitoring function |
| CN102661908A (en) * | 2012-04-27 | 2012-09-12 | 中国科学院上海光学精密机械研究所 | Single-beam femtosecond probe for diagnosing laser plasma parameters |
| CN102661908B (en) * | 2012-04-27 | 2013-12-25 | 中国科学院上海光学精密机械研究所 | Single-beam femtosecond probe for diagnosing laser plasma parameters |
| CN113075789A (en) * | 2021-04-13 | 2021-07-06 | 南开大学 | Method and device for accurately adjusting incident light angle of optical reflection system |
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Open date: 20090211 |