CN101359668A - RFID chip - Google Patents
RFID chip Download PDFInfo
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- CN101359668A CN101359668A CNA200710044332XA CN200710044332A CN101359668A CN 101359668 A CN101359668 A CN 101359668A CN A200710044332X A CNA200710044332X A CN A200710044332XA CN 200710044332 A CN200710044332 A CN 200710044332A CN 101359668 A CN101359668 A CN 101359668A
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Abstract
The invention provides a printable full-polymer RF ID chip. The invention makes conducting macromolecule or nano-metal (gold or silver) ink into an electrode or a joint through mimeographing or printing and takes ferroelectric macromolecular polymer (vinylidene fluoride-trifluoroethylene) copolymer [P(VDF-TrFE)] as a dielectric medium to assemble a totally polymer-based information memory. A circuit of the information memory can be directly printed on a thin polymer film by using conducting material and an antenna is also mimeographed or printed with conducting ink, thus omitting the indispensable vacuum process and etching technique in conventional mineral transistor fabrication process and greatly simplifying assembling process. The invention is suitable for mass continuous production and can reduce production cost.
Description
Technical field
The invention relates to a kind of radio-frequency (RF) identification chip, particularly relevant for a kind of low cost radio frequency identification chip that improves storage chip.
Background technology
Radio-frequency (RF) identification (RF-ID) is because in logistics, retail, and public transport, the wide application of aspects such as production process management and military affairs is considered to one of the most rising information technology.Many countries and regions and international trans-corporation are all in research and development and the application process of quickening to promote REID.
What traditional radio-frequency (RF) identification chip adopted is silicon, and the information storage system of silicon be with data storing in the circuit that monocrystalline silicon and multiple metal, insulating material etc. are made, circuit forms two-dimensional array on silicon chip.Utilize photoetching technique, by exposure and many steps such as selective etch, with the figure transfer that designs on the mask to silicon chip.Step is various, complex process, long processing time.
Development along with memory system technologies, based on the deposition of solution and directly printing technique on functional material, use, provide a kind of possibility of new manufacturing electronic device, for example organic field effect tube (FET), can be applied to low cost, large-area flexible electronic device.Therefore the random access message storage (FeRAM) based on the ferroelectric thin film of solution deposition receives increasing concern, even disconnect because the memory characteristic of this type systematic is a power supply, remember condition does not disappear or changes, and only needs power supply when storage or reading of data.Early stage ferro-electric random access technology mainly is the ferroelectric random memory technology that adopts based on ferroelectric ceramic thin film, deposits ferroelectric ceramic thin film on silicon substrate, and silicon is as grid, and ferroelectric ceramic thin film and metal electrode are as source electrode and drain electrode.But to the ferroelectric ceramic thin film Study on Technology only is the research of some basic aspects, but fails to obtain the breakthrough of large-scale application.
Had (Zr, Ti) O afterwards with PZT[Pb
3] be dielectric ferroelectric random storage chip, as the chip for cell phone of the 1T/1C framework of Japanese fujitsu and Korea S three magnitude companies, the toxicity of the lead (Pb) in the PZT dielectric and PZT must limit further developing of it in high temperature (usually more than 1000 ℃) processing then.
Present radio-frequency (RF) identification chip is a silicon, and the price height has seriously restricted the further promotion and application of REID.Therefore, the radio-frequency (RF) identification chip based on ferro-electric random access chip of developing low-cost becomes a kind of developing direction.
Summary of the invention
The purpose of this invention is to provide a kind of radio-frequency (RF) identification chip, its chip structure is simple, and cost is lower.
The objective of the invention is to be achieved by the following technical programs: at first the coating conducting polymer composite forms hearth electrode on plastic substrate; Back to be dried is coated with ferroelectric polymers on hearth electrode; Elder generation anneals in baking oven then in drying at room temperature after being coated with ferroelectric polymers; After treating that ferroelectric polymers is cooled to room temperature, on ferroelectric polymers, be coated with top electrode, dry in atmosphere then; At substrate surrounding conductive ink printed antenna.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, wherein forming hearth electrode at coating conducting polymer composite on the plastic substrate is by regulate the conductive polymer solution prescription line that prints electrode on plastic substrate.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, wherein forming hearth electrode at coating conducting polymer composite on the plastic substrate is to be coated with conductive polymer film on plastic substrate.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, be on the plastic substrate that is coated with hearth electrode, to print ferroelectric polymer film wherein at the ferroelectric polymers that is coated with on the hearth electrode.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, the ferroelectric polymers that wherein is coated with on hearth electrode is poly-(vinylidene-trifluoro-ethylene), and wherein the monomer mole ratio of vinylidene and trifluoro-ethylene is 90: 10～50: 50.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, the step of the ferroelectric polymers that wherein is coated with on hearth electrode also is included in poly-(vinylidene-trifluoro-ethylene) and is dissolved in the solvent back filtering solution to remove the step of mechanical impurities.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, annealing temperature is 120～150 ℃ in the step of wherein annealing in baking oven, and annealing time is 10～60 minutes.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, wherein top electrode is identical with the hearth electrode material, makes by conducting polymer.
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, wherein top electrode is printed on the ferroelectric polymers with method of printing, and upper electrode material is prepared with commodity electrically conductive polyaniline (production of Finland Panipol company).
According to the manufacture method of radio-frequency (RF) identification chip of the present invention, wherein the conductive ink of printed antenna is the conducting polymer ink or is suitable for the metal or the precursor solution that print or print.
The present invention forms electrode and contact with conducting polymer or nano metal (gold or silver) ink through printing or printing, with ferroelectric polyphosphazene polymer (vinylidene-trifluoro-ethylene) copolymer is dielectric, assembling is all based on the information-storing device of polymer, its " circuit " can be with electric conducting material direct " printing " on polymer foil, antenna is also directly printed or is printed by conductive ink and forms simultaneously, the vacuum process and the lithographic technique that must use in traditional mineral crystal pipe manufacturer have been broken away from, greatly simplified packaging technology, can carry out large-scale continuous production, reduce production cost.
Description of drawings
Fig. 1 is a radio-frequency (RF) identification chip structural representation of the present invention.
Fig. 2 is the radio-frequency (RF) identification chip structural representation that the present invention contains function circuit.
Fig. 3 is the detailed structure schematic diagram of the mnemon of radio-frequency (RF) identification chip of the present invention.
Fig. 4 is the manufacture method flow chart of radio-frequency (RF) identification chip of the present invention.
Fig. 5 A is the polarization performance resolution chart of ferroelectric properties of the mnemon of radio-frequency (RF) identification chip of the present invention.
Fig. 5 B is the ageing properties resolution chart of ferroelectric properties of the mnemon of radio-frequency (RF) identification chip of the present invention.
Embodiment
See also shown in Figure 1ly, it is for according to the structural representation that prints all-polymer radio-frequency (RF) identification chip 10 of the present invention.It comprises matrix 11, is arranged at the chip unit 12 on the matrix 11 and is arranged at chip unit 12 antenna 13 on every side.
See also shown in Figure 2ly, wherein the chip unit 12 of this radio-frequency (RF) identification chip 10 comprises mnemon 21 and function circuit 22, and wherein function circuit 22 can be below plane, mnemon 21 place or the conplane outside.
See also the detailed structure schematic diagram of the mnemon 21 that Figure 3 shows that radio-frequency (RF) identification chip 10 of the present invention.Wherein mnemon 21 comprise bottom hearth electrode 31, be formed at the ferroelectric polymers 32 on the hearth electrode 31 and be formed at top electrode 33 on the ferroelectric polymers 32.
See also shown in Figure 4ly, it is the manufacture method flow chart of the mnemon 21 of radio-frequency (RF) identification chip 10 of the present invention, and it comprises the steps:
Step 41: at first on smooth smooth plastic substrate, be coated with conducting polymer composite to form hearth electrode (BE).Wherein be coated with conducting polymer composite, can be to use water-soluble poly aniline, by the regulator solution prescription, line prints electrode on plastic substrate.Live width is at 50 microns, at interval at 50 to 100 microns.The end of line is widened.Also can be with the metal or the precursor solution that are suitable for printing or printing.On smooth smooth plastic substrate, as polyacrylonitrile (PAN), PETG (PET), conductive polymer film in the coating, as polyaniline PANi, polypyrrole Ppy, poly-enedioxy thiophene (PEDOT) waits as hearth electrode.
Step 42: after treating to be coated with the plastic substrate drying of hearth electrode, on the plastic substrate that is coated with hearth electrode, print ferroelectric polymers.Wherein this ferroelectric polymers is poly-(vinylidene-trifluoro-ethylene) (P (VDF/TrFE)) of ferroelectric polymers.Wherein the monomer mole ratio scope of vinylidene and trifluoro-ethylene is 90: 10～50: 50, and adopting mol ratio in the present embodiment is 70: 30 ratio.The method of its coating is for being dissolved in ferroelectric polymers poly-(vinylidene-trifluoro-ethylene) in the solvent, and solvent has DMF, cyclohexane, diethyl carbonate etc.Concentration of ordinary dissolution in the present embodiment is 100ml dissolution with solvents 5g poly-(vinylidene-trifluoro-ethylene).
Also comprise filtering solution to remove the step of mechanical impurities after poly-(vinylidene-trifluoro-ethylene) dissolves fully, wherein the filter pore size is between 0.1 to 0.45 micron.
Utilize the solvent that is dissolved with poly-(vinylidene-trifluoro-ethylene) to be coated with ferroelectric polymers poly-(vinylidene-trifluoro-ethylene) then on the plastic substrate that is coated with hearth electrode, i.e. printing forms ferroelectric polymer film.
Step 43: will be coated with the present drying at room temperature of plastic substrate of ferroelectric polymers poly-(vinylidene-trifluoro-ethylene), in baking oven, anneal then.Wherein annealing temperature is 120～150 ℃, and annealing time is 10～60 minutes.
Step 44: after treating that ferroelectric polymers is cooled to room temperature, on ferroelectric polymers, be coated with top electrode.Wherein the material of top electrode is identical with the material of hearth electrode in the present embodiment.The pattern of top electrode can be printed on the method for inkjet printing on poly-(vinylidene-trifluoro-ethylene) film.Utilize a kind of common office's ink-jet printer, common ink original in the print cartridge is taken out and thoroughly cleans print cartridge, threading conducting polymer printing ink prints and gets final product.This diameter very of powering on is 0.5 millimeter a circle in the present embodiment.
Step 45: drying is 2～30 minutes in 50～80 ℃ of atmosphere, forms the mnemon finished product.
Like this, top electrode of the present invention and hearth electrode are interlaced, and " activity " information memory cell is promptly by spontaneous generation between the electrode " line " that intersects up and down.
See also shown in Fig. 5 A and Fig. 5 B, its be respectively the element made according to the method for first embodiment of the invention in room temperature through the polarization performance of ferroelectric properties test and the resolution chart of ageing properties, wherein operating voltage is 20V in this example by the thickness decision of poly-(vinylidene-trifluoro-ethylene).PUND measures by polarization, and Fig. 5 A has shown the rapid polarization counter-rotating performance that mnemon of the present invention is good, for the fast access of mnemon provides may.Fig. 5 B shows that mnemon of the present invention has good ageing properties.
After forming mnemon, can be on matrix printed antenna (step 46), antenna is also directly printed by conductive ink or printing forms, wherein conductive ink can be the conducting polymer ink, as polyaniline PANi, polypyrrole Ppy, PEDOT etc.In addition, be suitable for printing or the metal printed or precursor solution also be can be used as printed antenna by Nano Silver or nm of gold conductive ink.
Matrix in the second embodiment of the present invention, the material of hearth electrode and poly-(vinylidene-trifluoro-ethylene) is identical with first embodiment with preparation.Different with first embodiment is that upper electrode material is mixed by polystyrolsulfon acid (PSSH, Aldrich company produces) and silver powder (production of Aldrich company) among second embodiment.Prescription fully stirs in room temperature for polystyrolsulfon acid (percentage by weight 5% aqueous solution) 10 grams, silver powder 0.4 gram, stirs before each the use again.
In the third embodiment of the present invention, matrix, the material of hearth electrode and poly-(vinylidene-trifluoro-ethylene) is identical with first embodiment with preparation.Different with first embodiment is that upper electrode material is a conductive nano silver slurry among the 3rd embodiment.The Nano Silver prescription is: 0.34g (2mmol) silver acetate, 4.82g (20mmol) hexadecylamine, 80ml toluene, 0.22g phenylhydrazine (PhNHNH2), reaction is 1 hour under 60 ℃ of temperature.
In the fourth embodiment of the present invention, matrix, the material of hearth electrode and poly-(vinylidene-trifluoro-ethylene) is identical with first embodiment with preparation.Different with first embodiment is that top electrode is to be printed on poly-(vinylidene-trifluoro-ethylene) film with method of printing in the 4th embodiment, upper electrode material is prepared with commodity electrically conductive polyaniline (production of Finland Panipol company), prescription is: electrically conductive polyaniline (percentage by weight 8%12 grams, polystyrolsulfon acid (percentage by weight 5% aqueous solution) 5 grams, surfactant Zonyl FS-300 (percentage by weight 30% aqueous solution, du pont company) 0.5 gram, deionized water 15 grams.
It does not have transistor radio-frequency (RF) identification chip of the present invention on the mnemon aspect, greatly simplified the structure of chip, function circuit can be below the memory array plane or the conplane outside, can overcome the shortcoming of printing all-polymer chip dimension greater than the traditional silicon chip.And manufacture method of the present invention, form electrode and contact with conducting polymer or nano metal (gold or silver) ink through printing or printing, [P (VDF-TrFE)] is dielectric with ferroelectric polyphosphazene polymer (vinylidene-trifluoro-ethylene) copolymer, assembling is all based on the information-storing device of polymer, its " circuit " can be with electric conducting material direct " printing " on polymer foil, antenna is also directly printed or is printed by conductive ink and forms simultaneously, the vacuum process and the lithographic technique that must use in traditional mineral crystal pipe manufacturer have been broken away from, greatly simplified packaging technology, can carry out large-scale continuous production, reduce production cost.
Claims (10)
1, a kind of radio-frequency (RF) identification chip, it is characterized in that: it comprises a matrix, be formed at the chip unit on the matrix and be arranged at antenna around the chip unit, wherein chip unit comprises the hearth electrode that is formed on the matrix, is formed at the ferroelectric polymers on the hearth electrode and is formed at top electrode on the ferroelectric polymers.
2, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: described ferroelectric polymers is poly-(vinylidene-trifluoro-ethylene), and wherein the monomer mole ratio of vinylidene and trifluoro-ethylene is 90: 10～50: 50.
3, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: the identical conducting polymer that is with lower electrode material of top electrode.
4, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: upper electrode material is mixed by polystyrolsulfon acid and silver powder.
5, radio-frequency (RF) identification chip as claimed in claim 4 is characterized in that: the prescription of upper electrode material is weight percentage, and 5% polystyrolsulfon acid aqueous solution 8-10 restrains, silver powder 0.2-0.6 gram, fully stirs in room temperature, stirs before each the use again.
6, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: upper electrode material is a conductive nano silver slurry.
7, radio-frequency (RF) identification chip as claimed in claim 6, it is characterized in that: the prescription of upper electrode material Nano Silver is: 0.3-0.4g (2mmol) silver acetate, 4-6g (20mmol) hexadecylamine, 70-100ml toluene, 0.2-0.3g phenylhydrazine, reaction is 1 hour under 60 ℃ of temperature.
8, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: top electrode is printed on the ferroelectric polymers with method of printing, and upper electrode material is prepared with commodity electrically conductive polyaniline (Finland Panipol).
9, radio-frequency (RF) identification chip as claimed in claim 8 is characterized in that: the prescription of top electrode is: the polystyrolsulfon acid aqueous solution 5 grams of the electrically conductive polyaniline 10-13 gram of percentage by weight 8%, percentage by weight 5%, the surfactant Zonyl FS-300 aqueous solution 0.25-0.75 gram of percentage by weight 30%, deionized water 12-18 gram.
10, radio-frequency (RF) identification chip as claimed in claim 1 is characterized in that: antenna is directly to be printed or printing forms by conductive ink, and wherein conductive ink can be the conducting polymer ink or be suitable for the metal or the precursor solution that print or print.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710044332XA CN101359668A (en) | 2007-07-30 | 2007-07-30 | RFID chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200710044332XA CN101359668A (en) | 2007-07-30 | 2007-07-30 | RFID chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101359668A true CN101359668A (en) | 2009-02-04 |
Family
ID=40332060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200710044332XA Pending CN101359668A (en) | 2007-07-30 | 2007-07-30 | RFID chip |
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| Country | Link |
|---|---|
| CN (1) | CN101359668A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102855520A (en) * | 2012-07-30 | 2013-01-02 | 珠海天威飞马打印耗材有限公司 | Radio frequency identification (RFID) transponder coil and production method thereof |
| CN103218648A (en) * | 2012-01-19 | 2013-07-24 | 国民技术股份有限公司 | Near field communication chip |
| CN107148701A (en) * | 2014-12-23 | 2017-09-08 | 泰连公司 | Electronic product and the method for manufacturing electronic product |
| CN110470703A (en) * | 2019-08-21 | 2019-11-19 | 济南大学 | One kind being based on the capacitance type humidity sensor and its preparation method and application of " arch " structure |
-
2007
- 2007-07-30 CN CNA200710044332XA patent/CN101359668A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103218648A (en) * | 2012-01-19 | 2013-07-24 | 国民技术股份有限公司 | Near field communication chip |
| CN102855520A (en) * | 2012-07-30 | 2013-01-02 | 珠海天威飞马打印耗材有限公司 | Radio frequency identification (RFID) transponder coil and production method thereof |
| CN102855520B (en) * | 2012-07-30 | 2016-01-20 | 珠海天威飞马打印耗材有限公司 | RFID transponder coil and preparation method thereof |
| CN107148701A (en) * | 2014-12-23 | 2017-09-08 | 泰连公司 | Electronic product and the method for manufacturing electronic product |
| CN110470703A (en) * | 2019-08-21 | 2019-11-19 | 济南大学 | One kind being based on the capacitance type humidity sensor and its preparation method and application of " arch " structure |
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Application publication date: 20090204 |