CN101359169B - Method for correcting mask pattern - Google Patents
Method for correcting mask pattern Download PDFInfo
- Publication number
- CN101359169B CN101359169B CN2007100445467A CN200710044546A CN101359169B CN 101359169 B CN101359169 B CN 101359169B CN 2007100445467 A CN2007100445467 A CN 2007100445467A CN 200710044546 A CN200710044546 A CN 200710044546A CN 101359169 B CN101359169 B CN 101359169B
- Authority
- CN
- China
- Prior art keywords
- pattern
- mask pattern
- correction
- depth
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to a mask pattern correction method, comprising the following steps: providing a mask pattern; carrying out optical proximity correction to the mask pattern so as to form a corrected pattern; calculating the focal depth of the pattern edge after optical proximity correction; and re-defining the corrected pattern based on the focal depth of the corrected pattern edge so as to form the final corrected pattern. The application of the mask pattern correction method can reduce the corrected patterns caused by optical proximity correction.
Description
Technical field
The present invention relates to a kind of correcting pattern method of mask, particularly a kind of pattern edge is calculated its depth of focus.
Background technology
Along with the manufacturing of super large rule film integrated circuit enters the deep-submicron epoch, the dimensional requirement of mask pattern in the photoetching is further dwindled.Pattern when light exposes to resist by mask, on the mask is transferred and forms corrosion-resisting pattern.If dwindle the size of mask pattern, then the size of mask pattern can be near the wavelength of the light that forms corrosion-resisting pattern, thereby produce optical approach effect (Optical Proximity Effect, OPE), pattern on the mask will be out of shape when shifting, and the photoetching quality in adjacent patterns zone is subjected to the influence of optical approach effect increasing on the mask pattern.
The removing method of general optical approach effect adopt optics close on correction (Optical ProximityCorrections, OPC).Shown in Figure 1A, 1B, two mask patterns 1,2 are strip, close on modification method according to the optics based on membranous type, add that in the both sides of strip pattern two auxiliary patterns 3,4 are to form the correction pattern.Form to revise critical dimension behind the pattern (critical dimension CD) is increased, thus enlarged adjacent patterns depth of focus (depth of focus, DOF).But said method makes easily and produces half isolated space 5 between the adjacent patterns, should half isolated space, 5 meeting restriction manufacture of semiconductor scopes (Process Window).
Summary of the invention
The object of the present invention is to provide a kind of bearing calibration of mask pattern, the half isolated space that produces when eliminating optical approach effect by this method.
In order to reach described purpose, the invention provides a kind of bearing calibration of mask pattern, wherein, may further comprise the steps: a mask pattern is provided; Mask pattern is carried out optics close on correction formation correction pattern; Calculating optical closes on the depth of focus of revised correction pattern edge; Redefine the final correction pattern of formation according to the depth of focus of revising pattern edge to revising pattern.
In the bearing calibration of above-mentioned mask pattern, described mask pattern is made up of the zone and the zone line of two same widths.
In the bearing calibration of above-mentioned mask pattern, according to the depth of focus calculated value of described correction pattern edge, amplification redefines to pattern edge to get wherein maximum depth of focus calculated value.
In the bearing calibration of above-mentioned mask pattern, described final correction pattern is about the zone line symmetry.
The present invention makes it compared with prior art owing to adopted above-mentioned technical scheme, has following advantage and good effect: method for correcting mask pattern of the present invention can reduce optics and close on the inessential correction pattern that produces when revising.
Description of drawings
Method for correcting mask pattern of the present invention is provided by following embodiment and accompanying drawing.
Figure 1A to 1B is the bearing calibration synoptic diagram of mask pattern in the prior art;
Fig. 2 A to 2C is the bearing calibration synoptic diagram in mask pattern of the present invention school.
Embodiment
Below will the bearing calibration of mask pattern of the present invention be described in further detail.
Fig. 2 A to 2C is the bearing calibration synoptic diagram of mask pattern of the present invention.Shown in Fig. 2 A, be a mask pattern 6, this mask pattern 6 is that two identical zones 7,8 of width and zone line 9 are formed.Method for correcting mask pattern of the present invention is earlier to each zone 7 on the mask pattern 6,8,9 carry out optics closes on correction, shown in Fig. 2 B, draw auxiliary patterns 10a, 10b, 10c, 10d, 11a, 11b is as revising pattern, close on the correction database based on optics then pattern edge is calculated its depth of focus (depth of focus, DOF), because the marginal position mistake with defocus center (defocus center) and change synchronously, according to the depth of focus value of calculating, amplify defocusing center range, generally get the center that defocuses maximum in the pattern edge, Zui Da depth of focus value just redefines thereby pattern edge amplified.Shown in Fig. 2 C, the correction pattern of Xing Chenging is 12a, 12b at last, and revises pattern 12a, 12b about zone line 9 symmetrical distributions.By method for correcting mask pattern of the present invention, can reduce optics and close on the inessential correction pattern that produces when revising.
That more than introduces only is based on preferred embodiment of the present invention, can not limit scope of the present invention with this.Any method of the present invention is done replacement, the combination, discrete of step well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection domain.
Claims (4)
1. the bearing calibration of a mask pattern is characterized in that, may further comprise the steps:
One mask pattern is provided, and described mask pattern is made up of the zone and the zone line of two same widths;
Mask pattern is carried out optics close on correction formation correction pattern;
Calculating optical closes on the depth of focus of revised correction pattern edge;
According to the depth of focus value of calculating, amplify defocusing center range, get center that defocuses maximum in the pattern edge or maximum depth of focus value, thereby amplification redefines the final correction pattern of formation to pattern edge.
2. the bearing calibration of mask pattern as claimed in claim 1 is characterized in that: described mask pattern is made up of the zone and the zone line of two same widths.
3. the bearing calibration of mask pattern as claimed in claim 1 is characterized in that: according to the depth of focus calculated value of described correction pattern edge, amplification redefines to pattern edge to get wherein maximum depth of focus calculated value.
4. the bearing calibration of mask pattern as claimed in claim 1 is characterized in that: described final correction pattern form by the zone and the zone line of two same widths, and described final correction pattern is about described zone line symmetry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100445467A CN101359169B (en) | 2007-08-03 | 2007-08-03 | Method for correcting mask pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100445467A CN101359169B (en) | 2007-08-03 | 2007-08-03 | Method for correcting mask pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101359169A CN101359169A (en) | 2009-02-04 |
| CN101359169B true CN101359169B (en) | 2010-12-22 |
Family
ID=40331644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100445467A Active CN101359169B (en) | 2007-08-03 | 2007-08-03 | Method for correcting mask pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101359169B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101923280B (en) * | 2009-06-17 | 2012-10-03 | 上海华虹Nec电子有限公司 | Optical proximity correction figure for enhancing figure fidelity of Si/Ge emitter window |
| CN104952763B (en) * | 2014-03-28 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | The method for defining optimized electronic beam focusing |
| CN105093813B (en) * | 2015-09-11 | 2019-09-06 | 京东方科技集团股份有限公司 | Optical mask plate and exposure system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1818790A (en) * | 2005-02-07 | 2006-08-16 | 中芯国际集成电路制造(上海)有限公司 | Optical adjacent correction for mask pattern during photoetching process |
| CN1869819A (en) * | 2005-05-26 | 2006-11-29 | 国际商业机器公司 | Method and system for optical proximity correction |
-
2007
- 2007-08-03 CN CN2007100445467A patent/CN101359169B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1818790A (en) * | 2005-02-07 | 2006-08-16 | 中芯国际集成电路制造(上海)有限公司 | Optical adjacent correction for mask pattern during photoetching process |
| CN1869819A (en) * | 2005-05-26 | 2006-11-29 | 国际商业机器公司 | Method and system for optical proximity correction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101359169A (en) | 2009-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8826198B2 (en) | Method and apparatus for enhancing signal strength for improved generation and placement of model-based sub-resolution assist features (MB-SRAF) | |
| US7527900B2 (en) | Reticle and optical proximity correction method | |
| CN103645611B (en) | A kind of layout design photoetching process friendliness detection method | |
| US8788983B2 (en) | Method for correcting layout pattern and mask thereof | |
| CN103744267B (en) | Layout design photoetching technology friendliness detection method based on regular figure filtering | |
| US8332784B2 (en) | Semiconductor device | |
| CN106527040B (en) | A kind of adding method of secondary graphics | |
| US20070238032A1 (en) | Half-tone type phase-shifting mask and method for manufacturing the same | |
| JP2008026822A (en) | Method for manufacturing photomask and method for manufacturing semiconductor device | |
| CN100561340C (en) | The method of optical close correction | |
| CN101359169B (en) | Method for correcting mask pattern | |
| US20100227444A1 (en) | Mask, method for manufacturing the same, and method for manufacturing semiconductor device | |
| US20040128118A1 (en) | Process window compliant corrections of design layout | |
| US8181127B2 (en) | Standardization of assist pattern inserted into outermost pattern for enhancing depth of focus margin | |
| US20090288867A1 (en) | Circuit structure and photomask for defining the same | |
| US8617797B2 (en) | Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns | |
| JP4507558B2 (en) | Mask pattern data creation method | |
| CN109459910A (en) | For the Sub-resolution assist features setting method of metal layer process hot spot | |
| CN101893821A (en) | Method for optical proximity correction of database | |
| JP2008130897A (en) | Pattern layout for integrated circuit | |
| JP2012059875A (en) | Pattern formation method | |
| US20070111461A1 (en) | Systems And Methods For Forming Integrated Circuit Components Having Matching Geometries | |
| JP2010026416A (en) | Method for creating photomask pattern | |
| KR20040041056A (en) | Pattern design method of integrated circuit, generation method of exposure mask, exposure mask, and manufacturing method of integrated circuit device | |
| KR20090109349A (en) | Optical proximity correction method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |