CN101355082A - Display panel and test system - Google Patents
Display panel and test system Download PDFInfo
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- CN101355082A CN101355082A CN 200810212798 CN200810212798A CN101355082A CN 101355082 A CN101355082 A CN 101355082A CN 200810212798 CN200810212798 CN 200810212798 CN 200810212798 A CN200810212798 A CN 200810212798A CN 101355082 A CN101355082 A CN 101355082A
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- diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention provides a panel, which comprises a display zone, a plurality of testing pads, a plurality of testing transistors and a plurality of electrostatic protection devices, wherein the display zone has a plurality of pixels. The testing pads are arranged outside the display zone to receive testing signal; the testing transistors are arranged outside the display zone and are coupled with the testing pads so as to transmit the testing signal to the pixels; and each electrostatic protection device is arranged between every two testing pads so as to consume electrostatic energy and obstruct a path between every two testing pads.
Description
Technical field
The invention relates to a kind of display floater and test macro thereof, and particularly relevant for a kind of display panels (Liquid crystal display panel) and test macro thereof.
Background technology
Along with the high development of multimedia technology, the transmission of image information at present transfers Digital Transmission to by simulation mostly, and in order to cooperate modern life pattern, it is frivolous that the volume of video signal or device for image also day by day is tending towards.Traditional cathode ray tube (Cathode Ray Tube, CRT) though display has advantages such as excellent display quality and low cost, but because the structure in its internal electron chamber, make display can't meet the demand of slimming, lightweight and low consumpting power, and the user also exist when watching radiation to hinder problems such as eye.In recent years, because the maturation of photoelectric technology and semiconductor fabrication, also drive the flourish of flat-panel screens (Flat Panel Display), LCD (Liquid Crystal Display wherein, LCD) based on advantage such as its low voltage operating, radiationless line scattering, in light weight and volume be little, replace traditional cathode-ray tube display more gradually, and become the main flow of display product.
LCD mainly comprises a display panels and a backlight module (backlight module), wherein display panels is by a colored optical filtering substrates (Color Filter, C/F), a plurality of groups of substrates of thin-film transistor (thin film transistor array) and a liquid crystal layer that is disposed between this two substrates constitute, and backlight module is in order to provide this display panels required area source, so that LCD reaches the effect of demonstration.In addition, plurality of groups of substrates of thin-film transistor can be divided into viewing area (display region) and perimeter circuit district (peripheral circuit region), wherein dispose a plurality of dot structures in the viewing area, comprise a plurality of with the thin-film transistor of array arrangement and the pixel electrode (pixel electrode) of corresponding configuration with thin-film transistor, and dispose many gate wirings (gate line) in the perimeter circuit district, source electrode distribution (source line), a plurality of testing cushion (test pad) and test transistor, wherein the testing cushion idol is connected to gate wirings or source electrode distribution.
In the processing procedure of plurality of groups of substrates of thin-film transistor, can carry out electrical detection to the dot structure on the substrate usually, could normal operation to judge dot structure, and bad assembly (as thin-film transistor, pixel electrode etc.) or circuit repaired.The mode of existing detection can be divided into contact and contactless two kinds, wherein the detection mode of contact is the testing cushion that directly contacts gate wirings and source electrode distribution with probe (probe), and by a tester table (tester) input test signal, in regular turn each thin-film transistor is carried out electrical detection.
In addition, display panels usually can be because external factor, for example artificial carrying or environmental change etc., and in panel, produce the phenomenon of buildup of static electricity.Thus, after electric charge is accumulate to some, just may be because static discharge, and test transistor wrecks when causing detecting.
Summary of the invention
The invention provides a kind of panel, it can provide the function of electrostatic protection, when avoiding panel to test, the static discharge phenomenon takes place and causes test transistor to damage.
The invention provides a kind of test macro, in order to test above-mentioned display floater.
The invention provides a kind of panel, it comprises a viewing area, a plurality of testing cushion, a plurality of test transistor and a plurality of electrostatic protection device.The viewing area has a plurality of pixels.A plurality of testing cushion are disposed at outside the viewing area, in order to receive a plurality of test signals.A plurality of test transistors are disposed at outside the viewing area and couple a plurality of testing cushion, in order to transmit a plurality of test signals to a plurality of pixels.Each electrostatic protection device is positioned between per two testing cushion.
The invention provides a kind of test macro, it comprises above-mentioned panel, a tool and a tester table.Tool is in order to placing above-mentioned panel, and has a plurality of testing needles that are electrically connected with testing cushion.Tester table couples a plurality of testing needles, in order to test signal to be provided.
In one embodiment of this invention, i above-mentioned electrostatic protection device comprises one first diode, one second diode, one the 3rd diode, an impedance component, one the 4th diode, one the 5th diode and one the 6th diode.
The anode tap of first diode couples i testing cushion.The anode tap of second diode couples the cathode terminal of first diode.The cathode terminal of the 3rd diode couples the cathode terminal of second diode.First end of impedance component couples the anode tap of the 3rd diode.The anode tap of the 4th diode couples (i+1) individual testing cushion.The anode tap of the 5th diode couples the cathode terminal of the 4th diode.The cathode terminal of the 6th diode couples the cathode terminal of the 5th diode, and its anode tap couples second end of impedance component, and wherein i is a positive integer.
In one embodiment of this invention, i above-mentioned electrostatic protection device also comprises one the 7th diode, one the 8th diode, one the 9th diode, 1 the tenth diode, 1 the 11 diode and 1 the 12 diode.The anode tap of the 7th diode couples i testing cushion.The anode tap of the 8th diode couples the cathode terminal of the 7th diode.The cathode terminal of the 9th diode couples the cathode terminal of the 8th diode, and its anode tap couples first end of impedance component.The anode tap of the tenth diode couples (i+1) individual testing cushion.The anode tap of the 11 diode couples the cathode terminal of the tenth diode.The cathode terminal of the 12 diode couples the cathode terminal of the 11 diode, and its anode tap couples second end of impedance component.
In one embodiment of this invention, above-mentioned impedance component comprises amorphous silicon.
The invention provides a kind of panel and test macro thereof; and panel has a plurality of electrostatic protection devices; each electrostatic protection device is positioned between per two testing cushion; in order to consume the energy of static; the effect of electrostatic protection can be provided when panel is tested, in test process, damage to avoid test transistor.
Description of drawings
Fig. 1 is the test macro schematic diagram of one embodiment of the invention.
Fig. 2 is the equivalent circuit diagram of electrostatic protection device in the panel of one embodiment of the invention.
Fig. 3 is the circuit layout schematic diagram of the electrostatic protection device of Fig. 2.
Drawing reference numeral:
100: test macro
110: panel
112: the viewing area
114,114G: testing cushion
114i: i testing cushion
114i ': (i+1) individual testing cushion
116: test transistor
118: electrostatic protection device
118i: i electrostatic protection device
120: tool
122: testing needle
130: tester table
210a～210d: diode circuit
AS: polysilicon layer
D1～D12: diode
T1～T12: metal-oxide half field effect transistor
A, B: node
R: impedance component
S: test signal
Embodiment
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, the several embodiment of the present invention cited below particularly, and cooperate appended graphicly, be described in detail below.
Fig. 1 is the test macro schematic diagram of one embodiment of the invention.Please refer to Fig. 1, test macro 100 comprises a panel 110, a tool 120 and a tester table 130, and wherein panel 110 also comprises a viewing area 112, a plurality of testing cushion 114, a plurality of test transistor 116 and a plurality of electrostatic protection device 118.
In detail, tool 120 is in order to placing panel 110, and has a plurality of testing needles 122 that electrically connect with testing cushion 114.When panel 110 carries out electrical detection, tester table 130 couples each testing needle 122, and provide a test voltage in testing cushion 114G to open (turn on) each test transistor 116, then provide test signal S to each testing cushion 114 by testing needle 122 again.Viewing area 112 has a plurality of pixels (do not illustrate, it is to arrange in the array mode).Each testing cushion 114 is disposed at outside the viewing area 112, in order to acceptance test signal S.It is outer and couple testing cushion 114 that each test transistor 116 is disposed at viewing area 112, in order to transmit test signal S to the viewing area 112 pixel.Each electrostatic protection device 118 is positioned between per two testing cushion 114, in order to consuming the energy of a static, and intercepts the path of 114 of per two testing cushion.
Fig. 2 is the equivalent circuit diagram of electrostatic protection device in the panel of one embodiment of the invention.Please refer to Fig. 2, electrostatic protection device 118 is positioned between per two testing cushion 114, and Fig. 2 illustrates i electrostatic protection device 118i, and it is positioned between i testing cushion 114i and (i+1) individual testing cushion 114i '.I electrostatic protection device for example is made up of a plurality of diode D1～D12 and impedance component R.
As shown in Figure 2, the anode tap of diode D2 couples the cathode terminal of diode D1, and the cathode terminal of diode D3 couples the cathode terminal of diode D2, the diode circuit 210a that formation one is made of diode D1～D3.Similarly, the anode tap of diode D8 couples the cathode terminal of diode D7.The cathode terminal of diode D9 couples the cathode terminal of diode D8, the diode circuit 210c that formation one is made of diode D7～D9.This two loop 210a, 210c are coupled to the end of i testing cushion 114i and impedance component R respectively with parallel way connection and its two ends.That is to say that the anode tap of diode D1 and diode D7 couples i testing cushion 114i, and the end of impedance component R couples the anode tap of diode D3 and diode D9.
In like manner as can be known, according to above-mentioned connected mode, the other end at impedance component R, diode D4～D6, D10～D12 are with similar connected mode, form two shunt circuit 210b, 210d respectively, wherein the anode tap of diode D4 and diode D10 couples (i+1) individual testing cushion 114i ', and the anode tap of diode D6 and diode D12 couples the other end of impedance component R.
Please continue with reference to Fig. 2, diode D1, D2, D7 and D8 belong to forward diode for entering from i testing cushion 114i and having for the electrostatic charge of forward bias, and diode D3 and D9 then belong to backward diode for entering from i testing cushion 114i and having for the electrostatic charge of forward bias.In other words, enter and electrostatic charge with forward bias can be passed through diode D1, D2, D7 and D8 from i testing cushion 114i.When panel carried out electrical detection, if produce the electric current of moment because of static discharge this moment, electrostatic protection device 118 can be directed to arbitrary diode circuit via testing cushion 114 with this disruptive electric current.For example; the electric current that causes because of static discharge is led to diode circuit 210a via i testing cushion 114i; for electric current; diode D1, D2 belong to forward diode conducting smoothly; but diode D3 then belongs to backward diode, so the energy of electric current can be consumed herein, even causes diode D3 collapse (breakdown); protect test transistor 116 and other assemblies by this, to reach the target of electrostatic protection.In addition, forward diode D1, the D2 of two serial connections can prevent that current reversal is back to i testing cushion 114i.
Diode D3 particularly,, can intercept the path of 114 of per two testing cushion, even also can not form a current path with diode circuit 210b, 210d because of big electric current collapses because impedance component R has the component characteristic of high impedance.That is be that impedance component R can guarantee to be positioned over the electrostatic protection device 118 between per two testing cushion 114, even after the diode collapse, also do not form the doubt of path between the testing cushion 114.
Above-mentioned is example with diode circuit 210a, the operation principle of loop 210a is described at i testing cushion 114i, and be similar to diode circuit 210a, for (i+1) individual testing cushion 114i ', diode circuit 210b can provide identical effect, and the current energy that static discharge is produced can be consumed in the 210b of loop.In addition, can when damaging, diode circuit 210a, 210b provide the path of Qi Ta Xiao Mao electrostatic energy with diode circuit 210a, 210b diode connected in parallel loop 210c, 210d respectively.Need to prove that the foregoing description only is in the middle of the many embodiment of the present invention, and the present invention is not exceeded with the number of above-mentioned diode, the number of shunt circuit and the form of impedance component R.For example: each group can comprise more than three along the diode that oppositely is connected in series.
Fig. 3 is the circuit layout schematic diagram of the electrostatic protection device of Fig. 2.Please refer to Fig. 3, on the practice, the circuit layout of electrostatic protection device 118 (layout) is that (metal-oxide-semiconductor field effect transistor MOSFET) realizes diode among Fig. 2 with a plurality of metal-oxide half field effect transistors.As shown in Figure 3, the diode D1～D12 in a plurality of metal-oxide half field effect transistor T1～T12 difference corresponding diagram 2 in diode connection (diode-connected) mode, impedance component R then utilizes amorphous silicon layer AS to form high-resistance design.It should be noted that in certain embodiments, can on amorphous silicon layer AS, design a plurality of electrode branches, utilize point discharge (point discharge) principle, the path that provides electrostatic energy to lead off.In addition, node A, B are coupled to i testing cushion 114i and (i+1) individual testing cushion 114i ' respectively.
In sum, panel proposed by the invention and test macro thereof, its panel has a plurality of electrostatic protection devices, and each electrostatic protection device is positioned between per two testing cushion.Electrostatic protection device provides a plurality of diode circuits, and the energy of static can be consumed in the loop.In addition, impedance component R can guarantee to be positioned over the electrostatic protection device between per two testing cushion, even panel when testing, does not have the doubt that forms path because of static discharge between the testing cushion yet.Therefore,, can when panel is tested, provide the effect of electrostatic protection, suffer damage because of static discharge to avoid test transistor by the energy of electrostatic protection device consumption static.
In addition, so long as use above-mentioned arbitrary panel proposed by the invention, just belong to the category of institute of the present invention desire protection in LCD wherein.Moreover; though the present invention discloses as above with a plurality of embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (8)
1. a panel is characterized in that, described panel comprises:
One viewing area has a plurality of pixels;
A plurality of testing cushion are disposed at outside the described viewing area, in order to receive a plurality of test signals;
A plurality of test transistors are disposed at outside the described viewing area and couple described testing cushion, in order to transmit described test signal to described pixel; And
A plurality of electrostatic protection devices, each electrostatic protection device are positioned between per two testing cushion.
2. panel as claimed in claim 1 is characterized in that, i electrostatic protection device comprises:
One first diode, its anode tap couples i testing cushion;
One second diode, its anode tap couples the cathode terminal of described first diode;
One the 3rd diode, its cathode terminal couples the cathode terminal of described second diode;
One impedance component, its first end couples the anode tap of described the 3rd diode;
One the 4th diode, its anode tap couples (i+1) individual testing cushion;
One the 5th diode, its anode tap couples the cathode terminal of described the 4th diode; And
One the 6th diode, its cathode terminal couples the cathode terminal of described the 5th diode, and its anode tap couples second end of described impedance component, wherein i is a positive integer.
3. panel as claimed in claim 2 is characterized in that, i electrostatic protection device also comprises:
One the 7th diode, its anode tap couples i testing cushion;
One the 8th diode, its anode tap couples the cathode terminal of described the 7th diode;
One the 9th diode, its cathode terminal couples the cathode terminal of described the 8th diode, and its anode tap couples first end of described impedance component;
The tenth diode, its anode tap couples (i+1) individual testing cushion;
The 11 diode, its anode tap couples the cathode terminal of described the tenth diode; And
The 12 diode, its cathode terminal couples the cathode terminal of described the 11 diode, and its anode tap couples second end of described impedance component.
4. panel as claimed in claim 2 is characterized in that described impedance component comprises amorphous silicon.
5. a test macro is characterized in that, described test macro comprises:
One panel comprises:
One viewing area has a plurality of pixels;
A plurality of testing cushion are disposed at outside the described viewing area, in order to receive a plurality of test signals;
A plurality of test transistors are disposed at outside the described viewing area and couple described testing cushion, in order to transmit described test signal to described pixel; And
A plurality of electrostatic protection devices, each electrostatic protection device are positioned between per two testing cushion, in order to consuming the energy of a static, and intercept the path between described per two testing cushion;
One tool in order to placing described panel, and has the testing needle that a plurality of and described testing cushion is electrically connected; And
One tester table couples described testing needle, in order to described test signal to be provided.
6. test macro as claimed in claim 5 is characterized in that, i electrostatic protection device comprises:
One first diode, its anode tap couples i testing cushion;
One second diode, its anode tap couples the cathode terminal of described first diode;
One the 3rd diode, its cathode terminal couples the cathode terminal of described second diode;
One impedance component, its first end couples the anode tap of described the 3rd diode;
One the 4th diode, its anode tap couples (i+1) individual testing cushion;
One the 5th diode, its anode tap couples the cathode terminal of described the 4th diode; And
One the 6th diode, its cathode terminal couples the cathode terminal of described the 5th diode, and its anode tap couples second end of described impedance component, wherein i is a positive integer.
7. test macro as claimed in claim 6 is characterized in that, i electrostatic protection device also comprises:
One the 7th diode, its anode tap couples i testing cushion;
One the 8th diode, its anode tap couples the cathode terminal of described the 7th diode;
One the 9th diode, its cathode terminal couples the cathode terminal of described the 8th diode, and its anode tap couples first end of described impedance component;
The tenth diode, its anode tap couples (i+1) individual testing cushion;
The 11 diode, its anode tap couples the cathode terminal of described the tenth diode; And
The 12 diode, its cathode terminal couples the cathode terminal of described the 11 diode, and its anode tap couples second end of described impedance component.
8. test macro as claimed in claim 6 is characterized in that described impedance component comprises amorphous silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810212798 CN100585854C (en) | 2008-09-12 | 2008-09-12 | Display panel and test system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810212798 CN100585854C (en) | 2008-09-12 | 2008-09-12 | Display panel and test system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101355082A true CN101355082A (en) | 2009-01-28 |
| CN100585854C CN100585854C (en) | 2010-01-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810212798 Active CN100585854C (en) | 2008-09-12 | 2008-09-12 | Display panel and test system |
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|---|---|
| CN (1) | CN100585854C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098193A (en) * | 2011-08-16 | 2013-05-08 | 大科防静电技术咨询（深圳）有限公司 | Test pin array with electrostatic discharge protection |
| WO2013086729A1 (en) * | 2011-12-14 | 2013-06-20 | 深圳市华星光电技术有限公司 | Test system |
| CN103325327A (en) * | 2013-06-20 | 2013-09-25 | 深圳市华星光电技术有限公司 | Display panel and detecting line and detecting method for display panel |
| CN103995408A (en) * | 2014-05-13 | 2014-08-20 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device |
| CN106405965A (en) * | 2016-10-26 | 2017-02-15 | 京东方科技集团股份有限公司 | Array substrate, testing method of array substrate and display device |
| WO2017028299A1 (en) * | 2015-08-18 | 2017-02-23 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN107632471A (en) * | 2016-07-19 | 2018-01-26 | 鸿富锦精密工业（深圳）有限公司 | Light source module and backlight module |
| WO2019085196A1 (en) * | 2017-11-03 | 2019-05-09 | 惠科股份有限公司 | Wiring structure of display substrate |
| CN110491318A (en) * | 2019-07-24 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | Array substrate |
| CN112201186A (en) * | 2020-10-10 | 2021-01-08 | 深圳市华星光电半导体显示技术有限公司 | Test component group |
| US11043159B2 (en) | 2019-07-24 | 2021-06-22 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and display panel |
-
2008
- 2008-09-12 CN CN 200810212798 patent/CN100585854C/en active Active
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098193B (en) * | 2011-08-16 | 2015-07-29 | 大科防静电技术咨询（深圳）有限公司 | There is the testing needle array of electrostatic discharge (ESD) protection |
| CN103098193A (en) * | 2011-08-16 | 2013-05-08 | 大科防静电技术咨询（深圳）有限公司 | Test pin array with electrostatic discharge protection |
| WO2013086729A1 (en) * | 2011-12-14 | 2013-06-20 | 深圳市华星光电技术有限公司 | Test system |
| CN103325327A (en) * | 2013-06-20 | 2013-09-25 | 深圳市华星光电技术有限公司 | Display panel and detecting line and detecting method for display panel |
| WO2014201729A1 (en) * | 2013-06-20 | 2014-12-24 | 深圳市华星光电技术有限公司 | Display panel, detection circuit for display panel and detection method therefor |
| CN103325327B (en) * | 2013-06-20 | 2016-03-30 | 深圳市华星光电技术有限公司 | The detection line of a kind of display panel, display panel |
| CN103995408A (en) * | 2014-05-13 | 2014-08-20 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device |
| CN103995408B (en) * | 2014-05-13 | 2017-02-01 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device |
| WO2017028299A1 (en) * | 2015-08-18 | 2017-02-23 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN107632471A (en) * | 2016-07-19 | 2018-01-26 | 鸿富锦精密工业（深圳）有限公司 | Light source module and backlight module |
| CN106405965A (en) * | 2016-10-26 | 2017-02-15 | 京东方科技集团股份有限公司 | Array substrate, testing method of array substrate and display device |
| WO2019085196A1 (en) * | 2017-11-03 | 2019-05-09 | 惠科股份有限公司 | Wiring structure of display substrate |
| CN110491318A (en) * | 2019-07-24 | 2019-11-22 | 武汉华星光电半导体显示技术有限公司 | Array substrate |
| CN110491318B (en) * | 2019-07-24 | 2020-11-24 | 武汉华星光电半导体显示技术有限公司 | Array substrate |
| US11043159B2 (en) | 2019-07-24 | 2021-06-22 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and display panel |
| CN112201186A (en) * | 2020-10-10 | 2021-01-08 | 深圳市华星光电半导体显示技术有限公司 | Test component group |
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| CN100585854C (en) | 2010-01-27 |
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