CN101354505B - LCD device with spiral interactive source leakage electrode structure - Google Patents
LCD device with spiral interactive source leakage electrode structure Download PDFInfo
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- CN101354505B CN101354505B CN2007101195596A CN200710119559A CN101354505B CN 101354505 B CN101354505 B CN 101354505B CN 2007101195596 A CN2007101195596 A CN 2007101195596A CN 200710119559 A CN200710119559 A CN 200710119559A CN 101354505 B CN101354505 B CN 101354505B
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Abstract
The invention provides a liquid crystal display device which is provided with a spiral alternation source and drain electrode structure, comprising a substrate mainbody, a source electrode and a drain electrode which are arranged on the substrate mainbody, and channels which are formed by the source electrode and the drain electrode; the source electrode comprises a first source line and a second source line; the second source line is a circular source line with an opening; the first source line is connected at the middle part of the second source line; the drain electrode is also a circular drain line with the opening; one end of the second drain line is arranged inside the circular drain line; and one end of the circular drain line is arranged inside the second drain line. The liquid crystal display device arranges the TFT device as a spiral alternation structure, improves the breadth length ratio of the channel and reduces the effects on the aperture opening ratio, thus improving the electronic characteristic of the TFT device and improving the display performance of the TFT-LCD further.
Description
Technical field
The present invention relates to a kind of liquid crystal indicator, the film transistor device on particularly a kind of base main body (Thin Film Transistor, hereinafter to be referred as: the TFT) liquid crystal indicator of interactive source leakage electrode structure in the shape of a spiral.
Background technology
In today of display development, people are more and more higher to the requirement of display quality, improve display performance and also just become the key that earns a profit.In the parameter of the display characteristic that influences TFT-LCD, channel width-over-length ratio (Width/Length, hereinafter to be referred as: W/L) and aperture opening ratio be important parameters very, W/L is meant the ratio of channel width and length, W/L is the bigger the better, but W is subjected to the restriction of aperture opening ratio, and L is subjected to the restriction of photoresist precision; Aperture opening ratio is meant Thin Film Transistor-LCD (Thin Film Transistor-LiquidCrystal Display, hereinafter to be referred as: TFT-LCD) screen light transmission part and the not ratio of permeation parts area, the light transmission part is the occupied area of TFT pixel electrode pixel, and remainder is a lightproof part; These two kinds of parameters depend on the structural design of TFT device technology levels, when design TFT device, take all factors into consideration various factors and technological ability and cost, selected rational device parameters.The TFT device architecture mainly contains following two kinds in the existing liquid crystal indicator:
Fig. 4 is a TFT device architecture synoptic diagram in first kind of existing liquid crystal indicator, wherein forms raceway groove 43 between source electrode 41 and the drain electrode 42, and this structure realizes than being easier on technology, but its shortcoming is that W/L ratio is too little; Fig. 5 is a TFT device architecture synoptic diagram in second kind of existing liquid crystal indicator, wherein source electrode 51 and drain electrode 52 are the chiasma type structure, form raceway groove 53, and the W/L odds ratio of this structure is bigger, but TFT pixel electrode pixel area occupied is very big, has influenced aperture opening ratio.
Summary of the invention
The purpose of this invention is to provide a kind of liquid crystal indicator, both can improve channel width-over-length ratio, can reduce influence again, improve the characteristic electron of TFT device, further improve the display performance of TFT-LCD aperture opening ratio.
The present invention provides a kind of liquid crystal indicator with spiral interactive source leakage electrode structure by some embodiment, comprise base main body, be positioned at source electrode on the described base main body and drain electrode and by source electrode and the formed raceway groove of drain electrode, described source electrode comprises the first source line and the second source line, the described second source line is the annular source line that has opening, and the described first source line is connected the middle part of the described second source line; Described electric leakage very has the annular thread cast-off of opening; One end of the described second source line is positioned within the described annular thread cast-off, one end of described annular thread cast-off is positioned within the described second source line, the end that described drain electrode is connected with pixel electrode by via hole is arranged on outside the described annular source line, and described annular source line and described annular thread cast-off all fall within the scope of grid line region in the projection of grid line place layer.
The liquid crystal indicator that embodiments of the invention provide with spiral interactive source leakage electrode structure, by the TFT device is arranged to the spiral interactive shape, both improved channel width-over-length ratio, reduced influence again to aperture opening ratio, thereby improved the characteristic electron of TFT device, further improved the display performance of TFT-LCD.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 has the synoptic diagram of the liquid crystal indicator specific embodiment one of spiral interactive source leakage electrode structure for the present invention;
Fig. 2 is the sectional view of A-A direction among Fig. 1;
Fig. 3 has the synoptic diagram of the liquid crystal indicator specific embodiment two of spiral interactive source leakage electrode structure for the present invention;
Fig. 4 is the synoptic diagram of first kind of liquid crystal indicator of prior art;
Fig. 5 is the synoptic diagram of second kind of liquid crystal indicator of prior art.
Embodiment
Embodiment one:
Referring to Fig. 1, has the synoptic diagram of the liquid crystal indicator specific embodiment one of spiral interactive source leakage electrode structure for the present invention.Illustrate the TFT device that is positioned on the base main body among the figure, comprising: source electrode 11, drain electrode 12, data line 13, grid line 14 and the raceway groove 15 that forms by source electrode 31 and drain electrode 32; The source electrode comprises the first source line 111 and the second source line of being made up of the 2nd A source line 112, the 2nd B source line 113 and the 2nd C source line 114, the 2nd A source line 112, the 2nd B source line 113 and the 2nd C source line 114 connect successively, formation has the annular source line of opening, the first source line 111 is connected the middle part of the second source line, promptly is connected the junction of the 2nd A source line 112 and the 2nd B source line 113; Drain electrode 12 comprises first thread cast-off 121, second thread cast-off 122, the 3rd thread cast-off 123 and the 4th thread cast-off 124 that connects successively, and these four thread cast-offs form the annular thread cast-off that has opening; The opening part that the 2nd B source line 113 is arranged on annular thread cast-off makes the 2nd C source line 114 be positioned at annular thread cast-off, and the 3rd thread cast-off 123 is arranged in the opening of annular source line and makes the 4th thread cast-off 124 be positioned at the annular source line.In the present embodiment, form the square spiral interactive source leakage electrode structure between source electrode 11 and the drain electrode 12, the vertical range between source electrode 11 and the drain electrode 12 is referred to as channel length, and the total length of this S type raceway groove 15 is referred to as channel width.
Referring to Fig. 2, be the sectional view of A-A direction among Fig. 1.Illustrate each layer structure and groove bit architecture on the base main body among the figure, each layer comprises: grid line layer 21, insulation course 22, semiconductor layer 23; Source-drain electrode and raceway groove position are followed successively by: comprising the 2nd A source line 112, the 4th thread cast-off 124, the 2nd C source line 114, reach second thread cast-off 122, is raceway groove 15 between source line and the thread cast-off.
Present embodiment both had been applicable to four layers of mask plate technology, also was applicable to five layers of mask plate technology; According to process conditions, channel length can also be adjusted accordingly in the present embodiment.
Compared with prior art, channel width obviously increases in the present embodiment, through actual verification, the W/L value of present embodiment is 42/5, and the W/L value of first kind of structure of prior art is 27.5/5, after the TFT device being carried out the spiral interactive source leakage electrode structure improvement, the W/L value is 1.5 times of prior art, improved the W/L value, and second kind of structure of this structure and prior art compared, reduced influence, thereby improved the characteristic electron of TFT device, further improved the display performance of TFT-LCD aperture opening ratio.
Embodiment two:
Referring to Fig. 3, has the synoptic diagram of the liquid crystal indicator specific embodiment two of spiral interactive source leakage electrode structure for the present invention.Illustrate the TFT device that is positioned on the base main body among the figure, comprising: source electrode 31, drain electrode 32, data line 33, grid line 34 and the raceway groove 35 that forms by source electrode 31 and drain electrode 32; Source electrode 31 comprises the first source line 311 and the second source line, 312, the second source lines 312 for having the annular source line of opening, this annular source line be shaped as level and smooth annular, the first source line 311 is connected the middle part of the second source line 312; Drain electrode 32 is for having the annular thread cast-off of opening, this annular thread cast-off be shaped as level and smooth annular; One end of the second source line 312 is positioned within the annular thread cast-off, and an end of drain electrode 32 is positioned within the second source line 312.In the present embodiment, form the round screw thread interactive source leakage electrode structure between source electrode 31 and the drain electrode 32, the vertical range between source electrode 31 and the drain electrode 32 is referred to as channel length, and the total length of this raceway groove is referred to as channel width.
Present embodiment both had been applicable to four layers of mask plate technology, also was applicable to five layers of mask plate technology; According to process conditions, channel length can also be adjusted accordingly in the present embodiment.
Compared with prior art, the width of raceway groove 35 obviously increases in the present embodiment, after the TFT device being carried out the spiral interactive source leakage electrode structure improvement, improved the W/L value, and second kind of structure of this structure and prior art compared, reduced influence, thereby improved the characteristic electron of TFT device, further improved the display performance of TFT-LCD aperture opening ratio.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (3)
1. liquid crystal indicator with spiral interactive source leakage electrode structure comprises: base main body, be positioned at source electrode on the described base main body and drain electrode and by source electrode and the formed raceway groove of drain electrode; It is characterized in that: described source electrode comprises the first source line and the second source line, and the described second source line is the annular source line that has opening, and the described first source line is connected the middle part of the described second source line; Described electric leakage very has the annular thread cast-off of opening; One end of the described second source line is positioned within the described annular thread cast-off, one end of described annular thread cast-off is positioned within the described second source line, the end that described drain electrode is connected with pixel electrode by via hole is arranged on outside the described annular source line, and described annular source line and described annular thread cast-off all fall within the scope of grid line region in the projection of grid line place layer.
2. liquid crystal indicator according to claim 1, it is characterized in that: the described second source line comprises the 2nd A source line, the 2nd B source line, the 2nd C source line that connects successively, described annular thread cast-off comprises first thread cast-off, second thread cast-off, the 3rd thread cast-off and the 4th thread cast-off that connects successively, described the 2nd B source line is arranged in the opening of described annular thread cast-off and makes described the 2nd C source line be positioned at described annular thread cast-off, and described the 3rd thread cast-off is arranged in the opening of described annular source line and makes described the 4th thread cast-off be positioned at described annular source line.
3. liquid crystal indicator according to claim 1 is characterized in that: described annular source line be shaped as level and smooth annular, described annular thread cast-off be shaped as level and smooth annular.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101195596A CN101354505B (en) | 2007-07-26 | 2007-07-26 | LCD device with spiral interactive source leakage electrode structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101195596A CN101354505B (en) | 2007-07-26 | 2007-07-26 | LCD device with spiral interactive source leakage electrode structure |
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| CN101354505A CN101354505A (en) | 2009-01-28 |
| CN101354505B true CN101354505B (en) | 2010-09-15 |
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| CN2007101195596A Active CN101354505B (en) | 2007-07-26 | 2007-07-26 | LCD device with spiral interactive source leakage electrode structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102508386B (en) | 2011-11-28 | 2014-11-26 | 深圳市华星光电技术有限公司 | Liquid crystal display |
| CN104332490A (en) * | 2014-10-27 | 2015-02-04 | 重庆京东方光电科技有限公司 | Thin film transistor |
| CN105140300B (en) * | 2015-10-20 | 2019-01-18 | 重庆京东方光电科技有限公司 | Thin film transistor and its manufacturing method, array substrate and display device |
| CN209045572U (en) | 2019-01-02 | 2019-06-28 | 北京京东方技术开发有限公司 | Thin film transistor (TFT), dot structure, display base plate, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1679170A (en) * | 2002-08-30 | 2005-10-05 | 夏普株式会社 | Thin film transistor, liquid crystal display apparatus, manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1679170A (en) * | 2002-08-30 | 2005-10-05 | 夏普株式会社 | Thin film transistor, liquid crystal display apparatus, manufacturing method |
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