CN101339930A - Flip chip packaging body and manufacturing method thereof - Google Patents
Flip chip packaging body and manufacturing method thereof Download PDFInfo
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- CN101339930A CN101339930A CN 200710127600 CN200710127600A CN101339930A CN 101339930 A CN101339930 A CN 101339930A CN 200710127600 CN200710127600 CN 200710127600 CN 200710127600 A CN200710127600 A CN 200710127600A CN 101339930 A CN101339930 A CN 101339930A
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- wafer
- circuit board
- packaging body
- chip packaging
- flip chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a flip-chip packaging body and a manufacturing method thereof. The flip-chip packaging body comprises a glass circuit board and at least one wafer. The surface of the glass circuit board is provided with a circuit layer. The wafer is electrically connected with the circuit layer in the flip-chip bonding way. The thicknesses/thickness of the wafer and/or the glass circuit board are/is less than 200 microns. The manufacturing method of the flip-chip packaging body include that the glass circuit board is provided, the surface of the glass circuit board is provided with the circuit layer on the surface; at least one wafer is electricity connected with the circuit layer in the flip-chip bonding way, and the thicknesses/thickness of the wafer and/or the glass circuit board are/is reduced to ensure that the thicknesses/thickness of the wafer and/or the glass circuit board are/is less than 200 microns. The manufacturing method of the invention can effectively reduce the probability of the wafer to be damaged and improve the cooling efficiency of the flip-chip packaging body.
Description
Technical field
The present invention relates to a kind of packaging body, particularly relate to a kind of flip chip packaging body.
Background technology
Because wafer technologies is constantly to high-frequency operation and multi-functional development, pin (pin) number increases relatively, and traditional routing engages (wire bonding) encapsulation can't satisfy electrical requirement.Chip bonding (flip-chip bonding) has been widely used in wafer package, with the active surface (activesurface) of wafer towards substrate, the encapsulation technology that is connected with substrate as wafer by tin lead welding ball (solder ball).Chip bonding more can reduce interference, reinforcement electrical property efficiency, raising heat-sinking capability and the reduction encapsulation volume of noise except the density that increases substantially the wafer pin.
Fig. 1 is a kind of schematic diagram that has known flip chip packaging body 1 now.See also shown in Figure 1ly, flip chip packaging body 1 comprises a sphere grid array (Ball Grid Array, BGA) substrate 11, a wafer 12, a sealing (underfill) 13 and most soldered balls 14.Wherein, wafer 12 is in the chip bonding mode, electrically connects with sphere grid array substrate 11 by above-mentioned soldered ball 14.Between wafer 12 and sphere grid array substrate 11, form a space, in order to protect the structure of electric connection, so filling sealing 13 space in, finish the making of flip chip packaging body 1.
For flip chip packaging body 1, because the surface of active surface, above-mentioned soldered ball 14 and the sphere grid array substrate 11 of sealing 13 coating wafers 12, the used heat that causes operation to produce is difficult for dissipating.In addition, in order to satisfy the pressing step demand in the chip bonding processing procedure, wafer 12 thickness own can not be too thin, also makes to be difficult for via wafer 12 by the used heat that active surface produced own to external radiation; Simultaneously the thickness of sphere grid array substrate 11 and material behavior more are difficult for the used heat that allows wafer 12 produce, via outwards transmission of sphere grid array substrate 11 itself.Therefore the framework of flip chip packaging body 1 hides the not good problem of heat dissipation, can influence the reliability and the useful life of wafer 12, more reduces the quality of flip chip packaging body 1.
This shows that above-mentioned existing flip chip packaging body obviously still has inconvenience and defective, and demands urgently further being improved in manufacture method and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and general manufacture method does not have appropriate processing method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found good flip chip packaging body of a kind of thermal diffusivity and manufacture method thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing flip chip packaging body and manufacture method thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new flip chip packaging body and manufacture method thereof, make it have more practicality.Through constantly research, design, and after studying repeatedly and improving, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcomes the defective that existing flip chip packaging body and manufacture method thereof exist, and a kind of new flip chip packaging body and manufacture method thereof are provided, and technical problem to be solved is to make it improve heat dissipation, is very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of flip chip packaging body that the present invention proposes, this flip chip packaging body comprises: a glass circuit board, its surface are to have a circuit layer; And at least one wafer, they be to be electrically connected at this circuit layer, and the thickness of this wafer and/or glass circuit board is less than 200 microns in the chip bonding mode.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid flip chip packaging body, it more comprises: at least one first heat dissipation element and/or at least one first heat conducting element are to be arranged at the side of this wafer with respect to this glass circuit board.
Aforesaid flip chip packaging body, it more comprises: at least one second heat dissipation element and/or at least one second heat conducting element are to be arranged at the side of this glass circuit board with respect to this wafer.
Aforesaid flip chip packaging body, wherein said first heat dissipation element and this second heat dissipation element are to be selected from the group that fin, heat conducting film, fan and cooling device constitute.
Aforesaid flip chip packaging body, wherein said first heat conducting element and this second heat conducting element are heat pipe.
Aforesaid flip chip packaging body, it more comprises: at least one second heat dissipation element and/or at least one second heat conducting element are to be arranged at the side of this glass circuit board with respect to this wafer.
Aforesaid flip chip packaging body, wherein said wafer are to electrically connect with the mode of anisotropy conducting film and most soldered balls and this glass circuit board.
Aforesaid flip chip packaging body, wherein said wafer are to cooperate the mode of laser welding and this glass circuit board to electrically connect with non-conductive cream.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The manufacture method of a kind of flip chip packaging body that proposes according to the present invention, this manufacture method comprises the following step: a glass circuit board is provided, and the surface of this glass circuit board has a circuit layer; In the chip bonding mode at least one wafer is electrically connected at this circuit layer; And this wafer of attenuate and/or glass circuit board, the thickness that makes this wafer and/or glass circuit board is less than 200 microns.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid manufacture method, wherein said attenuate step are to be microscope carrier with this glass circuit board.
Aforesaid manufacture method, wherein said attenuate mode is for grinding or etching.
Aforesaid manufacture method, it more comprises the following step: at least one first heat dissipation element and/or at least one first heat conducting element are set in the side of this wafer with respect to this glass circuit board.
Aforesaid manufacture method, it more comprises the following step: at least one second heat dissipation element and/or at least one second heat conducting element are set in the side of this glass circuit board with respect to this wafer.
Aforesaid manufacture method, it more comprises the following step: at least one second heat dissipation element and/or at least one second heat conducting element are set in the side of this glass circuit board with respect to this wafer.
Aforesaid manufacture method, wherein said wafer are to electrically connect with the mode of anisotropy conducting film and most soldered balls and this glass circuit board.
Aforesaid manufacture method, wherein said wafer are to cooperate electricity to penetrate fusing mode and the electric connection of this glass circuit board with non-conductive cream.
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, flip chip packaging body of the present invention and manufacture method thereof have following advantage and beneficial effect at least: from the above, because of being by the microscope carrier of a glass circuit board as thinned wafer according to a kind of flip chip packaging body of the present invention and manufacture method thereof, glass circuit board provides the wafer support effect at thinning process, so can reduce the probability of wafer damage effectively when wafer grinding.Compare with existing existing known techniques, the present invention can improve heat dissipation with wafer and/or glass circuit board attenuate, and the existing known sphere grid array substrate of the thermal diffusivity of glass circuit board is good, so can further improve heat dissipation.Moreover, by configuration heat dissipation element and/or heat conducting element, the heat dissipation of flip chip packaging body is further improved again.
In sum, the invention relates to that a kind of flip chip packaging body comprises a glass circuit board and at least one wafer, the surface of glass circuit board has a circuit layer, and wafer is electrically connected at circuit layer in the chip bonding mode, and the thickness of wafer and/or glass circuit board is less than 200 microns; A kind of manufacture method of flip chip packaging body also discloses in the lump.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on manufacture method or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing flip chip packaging body and manufacture method thereof have the outstanding multinomial effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is a kind of schematic diagram that has known flip chip packaging body now;
Fig. 2 is the schematic diagram according to a kind of flip chip packaging body of first embodiment of the invention;
Fig. 3 is the schematic diagram according to a kind of flip chip packaging body of second embodiment of the invention;
Fig. 4 is the schematic diagram according to a kind of flip chip packaging body of third embodiment of the invention;
Fig. 5 is the schematic diagram according to a kind of flip chip packaging body of fourth embodiment of the invention;
Fig. 6 is the schematic diagram according to a kind of flip chip packaging body of fifth embodiment of the invention; And
Fig. 7 is the flow chart according to the manufacture method of a kind of flip chip packaging body of preferred embodiment of the present invention.
1,2,3,4,5,6: flip chip packaging body 11: the sphere grid array substrate
12,22,32,42,52,62: wafer 13,23,33,43,53,63: sealing
14, a: soldered ball 21,31,41,51,61: glass circuit board
211,611: surface 44,64: the first heat dissipation elements
55,65: the second heat dissipation element S01～S05: the process step of manufacture method
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to flip chip packaging body and its embodiment of manufacture method, manufacture method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Below will consult correlative type, a kind of flip chip packaging body and manufacture method thereof according to preferred embodiment of the present invention are described, wherein components identical will be illustrated with the identical symbol of consulting.
First embodiment
Fig. 2 is the schematic diagram according to a kind of flip chip packaging body 2 of first embodiment of the invention.See also shown in Figure 2ly, flip chip packaging body 2 comprises a glass circuit board 21 and at least one wafer 22.The surface 211 of glass circuit board 21 has a circuit layer.Wherein, wafer 22 is to be electrically connected at circuit layer in the chip bonding mode.By grinding or etching mode, to grind and for example adopt mechanical lapping or cmp, chemical etching or physical etch are for example adopted in etching, or for example wet etching or dry ecthing, with thinned wafer 22, the thickness that makes wafer 22 is less than 200 microns, improves the heat dissipation of wafer 22 ends.
The chip bonding technology of present embodiment is can utilize an anisotropy conducting film (AnisotropicConductive Film ACF) and the mode of most soldered ball a, electrically connects wafer 22 and glass circuit board 21; Perhaps, (Non-conductive Paste NCP) cooperates the laser fusing mode, and wafer 22 and glass circuit board 21 are electrically connected with a non-conductive cream.Present embodiment is to be example with anisotropy conducting film and most soldered ball a, and wafer 22 and glass circuit board 21 are electrically connected, and filling one sealing 23 between glass circuit board 21 and wafer 22.
Second embodiment
Fig. 3 is the schematic diagram according to a kind of flip chip packaging body 3 of second embodiment of the invention.See also shown in Figure 3ly, flip chip packaging body 3 comprises a glass circuit board 31 and at least one wafer 32.Flip chip packaging body 2 differences of the flip chip packaging body 3 of present embodiment and first embodiment are: wafer 32 is without attenuate, and glass circuit board 31 then is thinned to less than 200 microns, improves the heat dissipation of glass circuit board 31 ends.Wherein the attenuate mode of glass circuit board 31 is with the wafer 22 attenuate modes described in first embodiment, so repeat no more.
The 3rd embodiment
Fig. 4 is the schematic diagram according to a kind of flip chip packaging body 4 of third embodiment of the invention.See also shown in Figure 4ly, flip chip packaging body 4 comprises a glass circuit board 41 and at least one wafer 42.Flip chip packaging body 3 differences of the flip chip packaging body 4 of present embodiment and second embodiment are: wafer 42 and glass circuit board 41 all pass through attenuate, make its thickness less than 200 microns, improve the heat dissipation of dual paths such as wafer 42 ends and glass circuit board 41 ends.
Flip chip packaging body 4 more comprises at least one first heat dissipation element 44 and/or at least one first heat conducting element (figure shows), and first heat dissipation element 44 and/or first heat conducting element are to be arranged at the side of wafer 42 with respect to glass circuit board 41.In the present embodiment, flip chip packaging body 4 is to be example explanation to comprise one first heat dissipation element 44, with the heat dissipation of further raising wafer 42 ends.
Wherein, first heat dissipation element 44 is to be selected from the group that fin, heat conducting film, fan and cooling device constitute.In the present embodiment, first heat dissipation element 44 is a fin.In addition, first heat conducting element can be a heat pipe (heat pipe), and sees through heat pipe and the used heat of wafer 42 is conducted to other heat dissipation elements.
The 4th embodiment
Fig. 5 is the schematic diagram according to a kind of flip chip packaging body 5 of fourth embodiment of the invention.See also shown in Figure 5, flip chip packaging body 4 differences of the flip chip packaging body 5 of present embodiment and the 3rd embodiment are: flip chip packaging body 5 comprises at least one second heat dissipation element 55 and/or at least one second heat conducting element (figure shows), and second heat dissipation element 55 and/or second heat conducting element are to be arranged at the side of glass circuit board 51 with respect to wafer 52.Similarly, flip chip packaging body 5 can be by second heat dissipation element 55, with the heat dissipation of further raising glass circuit board 51 ends.
The 5th embodiment
Fig. 6 is the schematic diagram according to a kind of flip chip packaging body 6 of fifth embodiment of the invention.See also shown in Figure 6, flip chip packaging body 4 differences of the flip chip packaging body 6 of present embodiment and the 3rd embodiment are: flip chip packaging body 6 is to comprise one first heat dissipation element 64 and one second heat dissipation element 65 simultaneously, first heat dissipation element 64 is arranged at the side of wafer 62 with respect to glass circuit board 61, and second heat dissipation element 65 is arranged at the side of glass circuit board 61 with respect to wafer 62.So, can further improve the heat dissipation of wafer 62 ends and glass circuit board 61 ends.
In sum, flip chip packaging body can be selected thinned wafer or glass circuit board according to design, certainly also can be with wafer and the equal attenuate of glass circuit board.In addition, more visual flip chip packaging body is required, adds heat dissipation element and/or heat conducting element, and the one-sided or bilateral that similarly can be chosen in flip chip packaging body is provided with heat dissipation element and/or heat conducting element.
Below be to be example, the manufacture method of a kind of flip chip packaging body of the present invention is described, make technical characterictic of the present invention more remarkable with flip chip packaging body 6.
See also Fig. 7 and shown in Figure 6, the manufacture method of flip chip packaging body comprises the following step S01 to step S03.
Step S01 provides a glass circuit board 61, and the surface 611 of glass circuit board 61 has a circuit layer.
Step S02 is electrically connected at circuit layer in the chip bonding mode with at least one wafer 62.Wherein, the chip bonding mode is to can be the mode that the anisotropy conducting film cooperates most soldered balls, or non-conductive cream cooperates the laser fusing mode that wafer 62 and glass circuit board 61 are electrically connected.
Step S03 is thinned wafer 62 and/or glass circuit board 61, and the thickness that makes wafer 62 or glass circuit board 61 is less than 200 microns, and the process of thinned wafer 62 is to be microscope carrier with glass circuit board 61.In addition, the mode of attenuate can be selected to grind or etching, and lapping mode for example is mechanical lapping or cmp, and etching mode for example is chemical etching, physical etch, wet etching or dry ecthing.
The manufacture method of flip chip packaging body more can comprise step S04 to step S05, with the one-sided or bilateral at flip chip packaging body heat dissipation element and/or heat conducting element is set, and further improves heat dissipation.
Step S04 is provided with at least one first heat dissipation element 64 and/or at least one first heat conducting element (figure shows) in the side of wafer 62 with respect to glass circuit board 61.
Step S05 is provided with at least one second heat dissipation element 65 and/or at least one second heat conducting element (figure shows) in the side of glass circuit board 61 with respect to wafer 62.
In sum, according to a kind of flip chip packaging body of the present invention and manufacture method thereof is by the microscope carrier of a glass circuit board as thinned wafer, glass circuit board provides the wafer support effect at thinning process, so can reduce the probability of wafer damage effectively when wafer grinding.Compare with existing known techniques, the present invention can improve heat dissipation with wafer and/or glass circuit board attenuate, and the existing known sphere grid array substrate of the thermal diffusivity of glass circuit board is good, so can further improve heat dissipation.Moreover, by configuration heat dissipation element and/or heat conducting element, the heat dissipation of flip chip packaging body is further improved again.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (16)
1, a kind of flip chip packaging body is characterized in that this flip chip packaging body comprises:
One glass circuit board, its surface are to have a circuit layer; And
At least one wafer be to be electrically connected at this circuit layer in the chip bonding mode, and the thickness of this wafer and/or glass circuit board is less than 200 microns.
2, flip chip packaging body according to claim 1 is characterized in that it more comprises:
At least one first heat dissipation element and/or at least one first heat conducting element are to be arranged at the side of this wafer with respect to this glass circuit board.
3, flip chip packaging body according to claim 2 is characterized in that it more comprises:
At least one second heat dissipation element and/or at least one second heat conducting element are to be arranged at the side of this glass circuit board with respect to this wafer.
4, flip chip packaging body according to claim 3 is characterized in that wherein said first heat dissipation element and this second heat dissipation element are to be selected from the group that fin, heat conducting film, fan and cooling device constitute.
5, flip chip packaging body according to claim 3 is characterized in that wherein said first heat conducting element and this second heat conducting element are heat pipe.
6, flip chip packaging body according to claim 1 is characterized in that it more comprises:
At least one second heat dissipation element and/or at least one second heat conducting element are to be arranged at the side of this glass circuit board with respect to this wafer.
7, flip chip packaging body according to claim 1 is characterized in that wherein said wafer is mode and the electric connection of this glass circuit board with anisotropy conducting film and most soldered balls.
8, flip chip packaging body according to claim 1 is characterized in that wherein said wafer is to cooperate the mode of laser welding and this glass circuit board to electrically connect with non-conductive cream.
9, a kind of manufacture method of flip chip packaging body is characterized in that this manufacture method comprises the following step:
One glass circuit board is provided, and the surface of this glass circuit board has a circuit layer;
In the chip bonding mode at least one wafer is electrically connected at this circuit layer; And
This wafer of attenuate and/or glass circuit board, the thickness that makes this wafer and/or glass circuit board is less than 200 microns.
10, manufacture method according to claim 9 is characterized in that wherein said attenuate step is is microscope carrier with this glass circuit board.
11, manufacture method according to claim 10 is characterized in that wherein said attenuate mode is for grinding or etching.
12, manufacture method according to claim 9 is characterized in that it more comprises the following step:
At least one first heat dissipation element and/or at least one first heat conducting element are set in the side of this wafer with respect to this glass circuit board.
13, manufacture method according to claim 12 is characterized in that it more comprises the following step:
At least one second heat dissipation element and/or at least one second heat conducting element are set in the side of this glass circuit board with respect to this wafer.
14, manufacture method according to claim 9 is characterized in that it more comprises the following step:
At least one second heat dissipation element and/or at least one second heat conducting element are set in the side of this glass circuit board with respect to this wafer.
15, manufacture method according to claim 9 is characterized in that wherein said wafer is mode and the electric connection of this glass circuit board with anisotropy conducting film and most soldered balls.
16, manufacture method according to claim 9 is characterized in that wherein said wafer is to cooperate electricity to penetrate fusing mode and the electric connection of this glass circuit board with non-conductive cream.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710127600 CN101339930A (en) | 2007-07-05 | 2007-07-05 | Flip chip packaging body and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710127600 CN101339930A (en) | 2007-07-05 | 2007-07-05 | Flip chip packaging body and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN101339930A true CN101339930A (en) | 2009-01-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN 200710127600 Pending CN101339930A (en) | 2007-07-05 | 2007-07-05 | Flip chip packaging body and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328601A (en) * | 2015-06-15 | 2017-01-11 | 南茂科技股份有限公司 | Chip packaging structure |
| CN108436604A (en) * | 2018-04-23 | 2018-08-24 | 宜特(上海)检测技术有限公司 | Resist delamination grinding method applied to low dielectric material crystal covered chip |
-
2007
- 2007-07-05 CN CN 200710127600 patent/CN101339930A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106328601A (en) * | 2015-06-15 | 2017-01-11 | 南茂科技股份有限公司 | Chip packaging structure |
| CN108436604A (en) * | 2018-04-23 | 2018-08-24 | 宜特(上海)检测技术有限公司 | Resist delamination grinding method applied to low dielectric material crystal covered chip |
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Open date: 20090107 |