CN101335317B - Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof - Google Patents
Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof Download PDFInfo
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- CN101335317B CN101335317B CN2007101290209A CN200710129020A CN101335317B CN 101335317 B CN101335317 B CN 101335317B CN 2007101290209 A CN2007101290209 A CN 2007101290209A CN 200710129020 A CN200710129020 A CN 200710129020A CN 101335317 B CN101335317 B CN 101335317B
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Abstract
The invention discloses a base plate for epitaxy of a semiconductor light-emitting component and a preparation method thereof. The upper surface of the base plate of the invention is provided with a plurality of nicks carved with electromagnetic waves, wherein, the epitaxy of the semiconductor light-emitting component is executed on the upper surface of the base plate.
Description
Technical field
The present invention relates to a kind of substrate, particularly a kind of substrate with the light extraction efficiency that improves the semiconductor luminescence component.
Background technology
Semiconductor luminous assembly (for example, light-emitting diode) has been widely used in many fields now, for example illumination and field of remote control etc.In order to ensure semiconductor luminous assembly higher functional reliability and lower energy resource consumption are arranged as far as possible, all need ask the external quantum efficiency (external quantum efficiency) of itself for semiconductor luminous assembly.
In principle, the external quantum efficiency of semiconductor luminous assembly depends on internal quantum (internal quantum efficiency) and the release efficiency (extraction efficiency) of itself.So-called internal quantum is determined by material behavior and quality.Then be meant from component internal as for release efficiency and be issued to radiation ratio in the surrounding air or the epoxy resin of encapsulation.Release efficiency depends on the loss that is taken place when component internal is left in radiation.If total reflection took place when being penetrated by semiconductor luminous assembly light, then light will and be absorbed at last in the inner constantly reflection of semiconductor luminous assembly, cause external quantum efficiency to descend.
In the prior art, the surface of the substrate of semiconductor luminous assembly can be through design to present a special configuration of surface, the light that is penetrated by semiconductor luminous assembly in order to scattering further promotes the external quantum efficiency of semiconductor luminous assembly to reduce total reflection.Yet the configuration of surface of aforesaid substrate forms by dry-etching or Wet-type etching usually, not only expends time on processing procedure and with high costs.
Summary of the invention
The purpose of this invention is to provide a kind of for semiconductor luminescence component brilliant substrate and manufacture method thereof of heap of stone.The light that this substrate can improve semiconductor luminous assembly takes out efficient.
In the present invention, a upper surface of this substrate has the indentation of several electromagnetic wave engravings, has the coarse sidewall of being delineated by electromagnetic wave in the described indentation, and wherein the crystalline substance of heap of stone of this semiconductor luminous assembly is executed on this upper surface of this substrate.
The present invention also provides a kind of method of manufacturing one substrate.By using an electromagnetic wave, this manufacture method is carved a upper surface of this semiconductor substrate, cause this upper surface to have the indentation of several electromagnetic wave engravings, the indentation of each electromagnetic wave engraving has the sidewall of fusion, remove the sidewall of fusion of the indentation of each electromagnetic wave engraving, wherein the crystalline substance of heap of stone of semiconductor luminescence component is executed on this upper surface of this substrate.
Compared to prior art, substrate of the present invention is carved on the surface of substrate to form a configuration of surface by using electromagnetic wave, cause light scatter that semiconductor substrate can penetrate by semiconductor luminous assembly to reduce total reflection, the external quantum efficiency and the light that further promote semiconductor luminous assembly take out efficient.And, in the process that forms this configuration of surface, need not carry out traditional gold-tinted micro-photographing process (promptly not needing to use light shield), therefore substrate of the present invention not only shortens many times and saves cost on processing procedure.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment of the present invention is described in detail below in conjunction with accompanying drawing:
Figure 1A and Figure 1B are the schematic diagrames of a substrate of one embodiment of the invention;
Fig. 2 A to Fig. 2 C is the vertical view of substrate of the present invention;
Fig. 3 A and Fig. 3 B are respectively the schematic diagram of sidewall before and after remove of fusion of the substrate of one embodiment of the invention;
Fig. 4 is the schematic diagram of a substrate of another embodiment of the present invention;
Fig. 5 is the schematic diagram of the semiconductor luminescence component of one embodiment of the invention; And
Fig. 6 is the schematic diagram of the semiconductor luminescence component of another embodiment of the present invention.
Embodiment
See also Figure 1A and Figure 1B, Figure 1A and Figure 1B are the schematic diagrames of a substrate 1 of one embodiment of the invention.This substrate 1 can be for the usefulness of semiconductor luminescence component crystalline substance of heap of stone.
In actual applications, this substrate 1 can be silicon (Si), gallium nitride (GaN), aluminium nitride (AlN), sapphire (Sapphire), spinelle (Spinnel), carborundum (SiC), GaAs (GaAs), alundum (Al (Al
2O
3), titanium dioxide lithium gallium (LiGaO
2), titanium dioxide lithium aluminium (LiAlO
2) or four magnesium oxide, two aluminium (MgAl
2O
4).
This upper surface 10 of this substrate 1 has the indentation 100 of several electromagnetic wave engravings.The crystalline substance of heap of stone of this semiconductor luminous assembly is executed on this upper surface 10 of this substrate 1.In actual applications, this electromagnetic wave can be that visible light, microwave, infrared ray, ultraviolet light, laser or other can form the energy source of indentations 100 at this upper surface 10 of this substrate 1.
Shown in Figure 1A, in one embodiment, this electromagnetic wave can be a laser beam 12.Whereby, this substrate 1 can be carved on a upper surface 10 of this substrate 1 by this laser beam 12, to form this several indentations 100 (shown in Figure 1B).
See also Fig. 2 A to Fig. 2 C, Fig. 2 A to Fig. 2 C is the vertical view of substrate 1 of the present invention.By the focusing and the profile of laser lens 14 (shown in Figure 1A) adjustment laser beam 12, laser beam 12 can form the indentation 100 with special shape at this upper surface 10 of substrate 1.Shown in Fig. 2 A to Fig. 2 C, for example, the indentation 100 of these several electromagnetic wave engravings can present a circle, a quadrangle or a track.
In actual applications, the indentation 100 of these several electromagnetic wave engravings can present the figure (promptly not exceeding with above-mentioned circle, quadrangle or track) of various geometry or non-geometry and can have special radian or curvature.The light that the indentation 100 of these several electromagnetic wave engravings not only can promote semiconductor luminous assembly takes out efficient, and the of heap of stone brilliant quality that can also promote semiconductor luminous assembly is to improve its photoelectric effect.
In one embodiment, utilize the laser beam 12 of power 25mW and wavelength 248nm or 193nm to be energy source, focus to 5um, can on the surface of the sapphire substrate 1 of diameter 2 inch, form the indentation 100 of diameter 5um and spacing 2um with optical lens.
See also Fig. 3 A.It should be noted that these several indentations 100 have the sidewall 102 of fusion after carving on laser beam 12 this upper surface 10 at this substrate 1.Because the sidewall 102 of fusion presents burned black state thereby does not have light transmission.Therefore, the sidewall 102 of fusion can be removed so that the sidewall of these several indentations 100 has light transmission.
See also Fig. 3 A and Fig. 3 B, Fig. 3 A and Fig. 3 B are respectively the schematic diagram of sidewall 102 before and after remove of fusion of the substrate 1 of one embodiment of the invention.In actual applications, the sidewall 102 of this fusion can remove by a dry ecthing procedure or a wet etching processing procedure.Shown in Fig. 3 B, after the sidewall 102 of fusion was removed, the sidewall 102 of these several indentations 100 can present coarse form.Whereby, the light that coarse sidewall 102 can increase semiconductor luminous assembly takes out efficient.
After the sidewall 102 of fusion removes, this substrate 1 is inserted in the equipment of MOCVD with the brilliant light-emitting diode that forms of heap of stone.In one embodiment, with TMGa and NH
3Be raw material, the GaN epitaxial layer of the thickness 1um that can grow up is on this upper surface 10 of this substrate 1.Then, add SiH
4Be n type alloy, the n type GaN of the thickness 2um that can grow up.Then, growing up with InGaN/GaN on n type GaN epitaxial layer is the formed multiple quantum trap luminous layer of material.At last, on luminescent layer, grow up with Cp
2Mg is that the P type GaN layer of P type alloy is finished light-emitting diode with manufacturing.
Brilliant formed light-emitting diode of heap of stone on the substrate 1 of the present invention, its optical output power can reach 19mW, compares with the defeated power 15mW of light of the made light-emitting diode of general substrate, and optical output power increases about 26.7%.
See also Fig. 4, Fig. 4 is the schematic diagram of a substrate 2 of another embodiment of the present invention, it is characterized in that a upper surface 20 of this substrate 2 has several indentations 200, and wherein the mean roughness (Ra) of the sidewall 202 of each indentation 200 can be equal to or greater than 1nm.Whereby, indentation 200 and coarse sidewall 202 thereof can increase the light taking-up efficient of semiconductor luminous assembly.
In one embodiment, these indentations 200 can utilize an electromagnetic wave and form.This electromagnetic wave can be that visible light, microwave, infrared ray, ultraviolet light, laser or other can form the energy source of indentations 200 at this upper surface 20 of this substrate 2.
See also Fig. 5, Fig. 5 is the schematic diagram of the semiconductor luminescence component 3 of one embodiment of the invention.As shown in Figure 5, this semiconductor luminous assembly 3 comprises a substrate 30, a sandwich construction 32 (multi-layerstructure) and an ohmic electrode structure 34 (ohmic electrode structure).
One upper surface 300 of this substrate 30 has the indentation 3000 of several electromagnetic wave engravings.This sandwich construction 32 is formed on this substrate 30 and comprises a luminous zone 320 (1ight-emitting region).This ohmic electrode structure 34 is formed on this sandwich construction 32.
In actual applications, this electromagnetic wave can be that visible light, microwave, infrared ray, ultraviolet light, laser or other can form the energy source of indentations at this upper surface 300 of this substrate 30.
See also Fig. 6, Fig. 6 is the schematic diagram of the semiconductor luminescence component 4 of another embodiment of the present invention.As shown in Figure 6, this semiconductor luminous assembly 4 comprises a substrate 40, a sandwich construction 42 and an ohmic electrode structure 44.
One upper surface 400 of this substrate 40 has several indentations 4000, and wherein the mean roughness of the sidewall 4002 of each indentation 4000 can be equal to or greater than 1nm.This sandwich construction 42 is formed on this substrate 40 and comprises a luminous zone 420.This ohmic electrode structure 44 is formed on this sandwich construction 42.
In one embodiment, these indentations 4000 can utilize an electromagnetic wave and form.
Please cooperate and consult Figure 1A and Figure 1B.Another embodiment of the present invention is a kind of method of manufacturing one substrate 1.By using an electromagnetic wave, this manufacture method is carved a upper surface 10 of this substrate 1, causes this upper surface 10 to have the indentation 100 of several electromagnetic wave engravings.Afterwards, the crystalline substance of heap of stone of semiconductor luminescence component is executed on this upper surface 10 of this substrate 1.
Compared to prior art, substrate of the present invention is carved on the surface of substrate to form a configuration of surface by using electromagnetic wave, cause light scatter that substrate can penetrate by semiconductor luminous assembly to reduce total reflection, the external quantum efficiency and the light that further promote semiconductor luminous assembly take out efficient.And, in the process that forms this configuration of surface, need not carry out traditional gold-tinted micro-photographing process (promptly not needing to use light shield), therefore substrate of the present invention not only shortens many times and saves cost on processing procedure.
Below preferred embodiment of the present invention is specified, but the present invention is not limited to described embodiment, those of ordinary skill in the art also can make all modification that is equal to or replacement under the prerequisite of spirit of the present invention, modification that these are equal to or replacement all are included in the application's claim institute restricted portion.
Claims (20)
1. substrate for semiconductor luminescence component brilliant usefulness of heap of stone, it is characterized in that: a upper surface of described substrate has the indentation of several electromagnetic wave engravings, have the coarse sidewall of being delineated by electromagnetic wave in the described indentation, the crystalline substance of heap of stone of described semiconductor luminous assembly is executed on the described upper surface of described substrate.
2. substrate as claimed in claim 1 is characterized in that: the indentation of described several electromagnetic wave engravings utilizes a laser beam and forms.
3. substrate as claimed in claim 2 is characterized in that: the indentation of each electromagnetic wave engraving has the sidewall of fusion.
4. substrate as claimed in claim 3 is characterized in that: the sidewall of the fusion of the indentation of each electromagnetic wave engraving further removes by a dry ecthing procedure or a wet etching processing procedure.
5. substrate as claimed in claim 2 is characterized in that: the vertical view of the indentation of each electromagnetic wave engraving presents a circle, an irregular quadrilateral or a rectangular vestige.
6. substrate as claimed in claim 2 is characterized in that: described substrate is formed by the one that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
7. substrate as claimed in claim 1 is characterized in that: the mean roughness of the sidewall of each indentation is equal to or greater than 1nm.
8. method of handling a substrate is characterized in that described method comprises the following step:
Utilize an electromagnetic wave, carve a upper surface of described substrate, cause described upper surface to have the indentation of several electromagnetic wave engravings, the indentation of each electromagnetic wave engraving has the sidewall of fusion;
Remove the sidewall of fusion of the indentation of each electromagnetic wave engraving;
Wherein the crystalline substance of heap of stone of semiconductor luminescence component is executed on the described upper surface of described substrate.
9. method as claimed in claim 8 is characterized in that: described electromagnetic wave is a laser beam.
10. method as claimed in claim 8 is characterized in that, further comprises the following step:
By a dry ecthing procedure or a wet etching processing procedure, remove the sidewall of fusion of the indentation of each electromagnetic wave engraving.
11. method as claimed in claim 8 is characterized in that: the vertical view of the indentation of each electromagnetic wave engraving presents a circle, an irregular quadrilateral or a rectangular vestige.
12. method as claimed in claim 8 is characterized in that: described substrate is formed by the one that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
13. method as claimed in claim 8 is characterized in that: the mean roughness of the sidewall of each indentation is equal to or greater than 1nm.
14. a semiconductor luminous assembly is characterized in that, comprises:
One substrate, a upper surface of described substrate have the indentation of several electromagnetic wave engravings, have the coarse sidewall of being delineated by electromagnetic wave in the described indentation;
One sandwich construction, described sandwich construction are formed on the described substrate and comprise a luminous zone; And
One ohmic electrode structure, described ohmic electrode structure is formed on the described sandwich construction.
15. semiconductor luminous assembly as claimed in claim 14 is characterized in that: the indentation of described several electromagnetic wave engravings utilizes a laser beam and forms.
16. semiconductor luminous assembly as claimed in claim 15 is characterized in that: the indentation of each electromagnetic wave engraving has the sidewall of fusion.
17. semiconductor luminous assembly as claimed in claim 16 is characterized in that: the sidewall of the fusion of the indentation of each electromagnetic wave engraving further removes by a dry ecthing procedure or a wet etching processing procedure.
18. semiconductor luminous assembly as claimed in claim 15 is characterized in that: the vertical view of the indentation of each electromagnetic wave engraving presents a circle, an irregular quadrilateral or a rectangular vestige.
19. semiconductor luminous assembly as claimed in claim 15 is characterized in that: described substrate is formed by the one that is selected from the group that is made up of silicon, gallium nitride, aluminium nitride, sapphire, spinelle, carborundum, GaAs, alundum (Al, titanium dioxide lithium gallium, titanium dioxide lithium aluminium and four magnesium oxide, two aluminium.
20. method as claimed in claim 14 is characterized in that: the mean roughness of the sidewall of each indentation is equal to or greater than 1nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101290209A CN101335317B (en) | 2007-06-29 | 2007-06-29 | Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101290209A CN101335317B (en) | 2007-06-29 | 2007-06-29 | Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101335317A CN101335317A (en) | 2008-12-31 |
| CN101335317B true CN101335317B (en) | 2010-12-08 |
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|---|---|---|---|
| CN2007101290209A Active CN101335317B (en) | 2007-06-29 | 2007-06-29 | Semi-conductor light emitting component having microwave etching substrate and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI512804B (en) * | 2013-12-12 | 2015-12-11 | Ind Tech Res Inst | Electrode structure, method of fabricating the same, touch element and touch display using the electrode structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1780001A (en) * | 2004-11-18 | 2006-05-31 | 晶元光电股份有限公司 | Semiconductor light emitting device and production thereof |
| CN2867600Y (en) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | Luminous diode package structure |
-
2007
- 2007-06-29 CN CN2007101290209A patent/CN101335317B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1780001A (en) * | 2004-11-18 | 2006-05-31 | 晶元光电股份有限公司 | Semiconductor light emitting device and production thereof |
| CN2867600Y (en) * | 2005-12-09 | 2007-02-07 | 璨圆光电股份有限公司 | Luminous diode package structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI512804B (en) * | 2013-12-12 | 2015-12-11 | Ind Tech Res Inst | Electrode structure, method of fabricating the same, touch element and touch display using the electrode structure |
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| Publication number | Publication date |
|---|---|
| CN101335317A (en) | 2008-12-31 |
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Effective date of registration: 20161028 Address after: Hsinchu City, Taiwan, China Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Taichung City, Taiwan, China Industrial Zone No. 34 Road, No. 40 Patentee before: Guangjia Photoelectric Co., Ltd. |