CN101335267A - Image sensing module having crystal three-dimensional stacking construction - Google Patents
Image sensing module having crystal three-dimensional stacking construction Download PDFInfo
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- CN101335267A CN101335267A CNA2007101126789A CN200710112678A CN101335267A CN 101335267 A CN101335267 A CN 101335267A CN A2007101126789 A CNA2007101126789 A CN A2007101126789A CN 200710112678 A CN200710112678 A CN 200710112678A CN 101335267 A CN101335267 A CN 101335267A
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- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
The invention provides an image sensing module with a crystal-grain three-dimensional stacked structure, in which at least one through hole of an image sensing crystal grain and an interlayer hole of an insulating layer under the through hole are filled with conductive materials so as to lead the image sensing crystal grain to establish vertical electrical break-over with the an image processing crystal grain buried in the insulating layer and form a solder balling bump on the back of the image sensing module, thus ensuring that the image sensing module can be directly assembled on a circuit board. The image sensing module of the invention has wafer-level packaging structure and the features of crystal-grain three-dimensional stack, can shorten the distance of electrical connection and reduce the overall assembled area and height of the image sensing module.
Description
Technical field
The present invention is about a kind of assembling structure of image sensing module; Particularly relevant for a kind of image sensing module assembling structure of tool crystal three-dimensional stacking construction.
Background technology
Image sensor has been applied in camera cell phone, camera, medical diagnosis and security personnel's supervision aspect widely, when wherein being applied in portable product and medical product, compact with reduce energy loss and reduce the driven demand that manufacturing cost is market always.The image sensor assembling structure that oneself knows has following several: United States Patent (USP) the 6th, 646, No. 289 Figure 11 A disclose a kind of wafer level packaging structure of image sensor, utilize a heavy distribution wires layer (Redistributed layer) that lead heavily is distributed to the brilliant back of the body from the crystal grain edge, and clamp this image sensor with layer glass; United States Patent (USP) the 5th, 051, No. 802 Fig. 3 discloses a kind of image sensor, grinds image sensor extremely thin, so that get final product sensitization from the crystalline substance back of the body; United States Patent (USP) the 7th, 061, No. 106 figure l discloses a kind of image sensing module, utilizes an insertion element (interposer) that an image sensor and other crystal grain are electrically connected, and lens element is connected in this insertion element top; United States Patent (USP) the 6th; 429, No. 036 Fig. 2 discloses a kind of image sensor, and the loam cake base material of this image sensor of protection is holed forms the hole that electrically conducts; so that circuit is drawn, utilize tin ball or metal level juncture that this loam cake base material and this image sensor are electrically connected again outward.
Above-mentioned traditional image sensor structure dress mode is to adopt semiconductor two dimension crystal grain structure dress and line connection, it is longer not only to electrically connect distance, the overall package module also occupies than large tracts of land, has not met the demand trend of future products towards compact, power saving and high-effect development.Therefore, if change the crystal grain lead layout type of two dimension into three-dimensional connected mode, can overcome the conventional two-dimensional structure dress technological deficiency that mode met with.
Summary of the invention
Technical problem to be solved by this invention provides a kind of image sensing module of tool crystal three-dimensional stacking construction, the electric connection of setting up vertical and horizontal by at least one image processing crystal grain of the intragranular vertical wires of at least one image sensing and its below, to shorten the electric connection distance of this image sensing module, and, this image sensing module directly is assembled on the circuit board in this image sensing module back side formation tin ball projection.
The image sensing module of a kind of tool crystal three-dimensional stacking construction provided by the invention comprises at least one image sensing crystal grain, at least one image processing crystal grain, a transmitting substrate and most conductivity weld pads.This image sensing crystal grain is that stacked on top engages with this image processing crystal grain, wherein a sensing face of this image sensing crystal grain up, this image sensing crystal grain has most bar vertical wires, whereby to set up electrically conducting of vertical and horizontal with this image processing crystal grain.This transmitting substrate is formed at this sensing face top of this image sensing crystal grain, and those conductivity pad-shaped are formed in this image sensing module back side.
According to such scheme, effect of the present invention is significant: the above-mentioned image sensing module of the present invention is shelved structure and crystal three-dimensional stacking construction for having the wafer scale structure, can shorten the electric connection distance of this image sensing module and reduce the overall package area and the height of this image sensing module, and then effectively increase the component density of unit are.
The aforesaid image sensing module of the present invention also can in conjunction with and pile up that less radio-frequency element (RFcomponent), light-emitting diode, antenna etc. are main, passive devices, so that the function of wireless transmission with oneself's illumination further to be provided.
Description of drawings
Figure 1A to Fig. 1 I is the structural section schematic diagram of each processing step correspondence of first specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 2 is the structural section schematic diagram of first specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 3 is the structural section schematic diagram of second specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 4 is the structural section schematic diagram of the 3rd specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 5 is the structural section schematic diagram of the 4th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 6 is the structural section schematic diagram of the 5th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 7 is the structural section schematic diagram of the 6th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 8 is the structural section schematic diagram of the 7th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Fig. 9 is the structural section schematic diagram of the 8th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Figure 10 is the structural section schematic diagram of the 9th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Figure 11 is the structural section schematic diagram of the tenth specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
Figure 12 is the structural section schematic diagram of the 11 specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.
The main element symbol is to as directed
10----------transmitting substrate 12----image sensor wafer
12a, 901----image sensing crystal grain 14----image processing crystal grain
16,19------insulating layer material 18----protective layer
20,30,40,50,60,70,80,90,100,110, the image sensing module of 120----tool crystal three-dimensional stacking construction
101---------adhesion layer 121----photosensitive region
122---------metal level 123----metal pad
124---------via 142----crystal grain adhering film
143---------weld pad 161,162----interlayer hole
163, the heavy distribution wires layer of vertical, the horizontal conductivity intraconnections of 164----165----
The 166---------level electrically connects 182----tin ball pad opening
183---------conductivity weld pad 184----tin ball projection
902---------memory 903----radio frequency line element
904---------passive device 905----System on Chip/SoC crystal grain
906---------light-emitting diode 907----guide lighting channel
908---------lens element 909----antenna structure
Embodiment
The image sensing module of tool crystal three-dimensional stacking construction of the present invention utilizes the manufacture of three-dimensional wafer-level structure dress to finish.Below illustrate the wafer scale structure dress manufacture method of the image sensing module of tool crystal three-dimensional stacking construction of the present invention with regard to an embodiment.
Fig. 2 is the structural section schematic diagram of first specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.Figure 1A to Fig. 1 I is the structural section schematic diagram of each processing step correspondence of image sensing module 20 of the tool crystal three-dimensional stacking construction of Fig. 2.At first, referring to Figure 1A, provide a transmitting substrate 10 and an image sensor wafer 12 respectively.This transmitting substrate 10 can be a glass baseplate or polymer base material.This image sensor wafer 12 comprises most image sensing crystal grain 12a, CMOS image sensing crystal grain for example, each this image sensing crystal grain 12a has a photosensitive region 121 and most metal level 122 surfaces formed thereon, and most metal pads 123, aluminium pad for example, be formed at respectively among these metal level 122 belows this image sensing crystal grain 12a, and electrically contact with this metal level 122.The present invention utilizes adhesion layer 101 that these transmitting substrate 10 lower surfaces and this image sensor wafer 12 upper surfaces are bonded together; this adhesion layer 101 can be the material that inorganic material, macromolecular material or they are combined into; to form the structure of Figure 1B, this transmitting substrate 10 is in order to protect each this image sensing crystal grain 12a.Then, still referring to Figure 1B, utilize the back side of this image sensor wafer 12 of lapping mode (grinding) thinning.Referring to Fig. 1 C, utilize crystal grain adhering film (die attach film) 142 that a majority image processing crystal grain 14 is piled up respectively in heads mode and be engaged in each this image sensing crystal grain 12a lower surface.The lower surface of each this image processing crystal grain 14 is formed with most weld pads 143.Referring to Fig. 1 D, utilize laser drill or etching mode in this image sensor wafer 12, form most vias (Through Silicon Via, TSV) 124, each this via 124 connects these image sensor wafers 12 until this metal level 122.Referring to Fig. 1 E, to bury those image processing crystal grain 14 in coating or the pressing mode, and this insulating layer material 16 is inserted in those vias 124 of this image sensor wafer 12 with an insulating layer material 16.Referring to Fig. 1 F, form most interlayer holes 161 and 162, each this interlayer hole 161 connects this via 124 of this insulating layer material 16 and this image sensor wafer 12 until this metal level 122.Each this interlayer hole 162 passes this insulating layer material 16 this weld pad 143 until each this image processing crystal grain 14.Then, referring to Fig. 1 G, with sputter or electrodeless plating mode or plating mode with conductive material for example metal insert in those interlayer holes 161 and 162, to form vertical conduction intraconnections 163 and horizontal conductivity intraconnections 164, and form simultaneously heavy distribution wires layer (redistributed layer) 165, and then set up the electric connection of vertical and horizontal of the weld pad 143 of each this image sensing crystal grain 12a and this image processing crystal grain 14 in the surface of this insulating layer material 16.Referring to Fig. 1 H; form a protective layer 18 in these insulating layer material 16 belows with coating or pressing mode; and in this protective layer 18, form most tin ball pad openings 182, lay respectively at this vertical conduction intraconnections 163 or this horizontal conductivity intraconnections 164 belows.Referring to Fig. 1 I, form a conductivity weld pad 183 for example metal pad in each this tin ball pad opening 182, then form tin ball projection 184 in these conductivity weld pad 183 belows to plant ball, printing or plating mode.Thus, promptly form the image sensing module of wafer scale structure dress of the present invention,, come out from this wafer-separate with image sensing module 20 with each tool crystallite dimension structure dress form again along the wafer cutting line cut crystal.Each these image sensing module 20 cross section structure as shown in Figure 2.Aforementioned image sensing module 20 can directly be assembled on the printed circuit board (PCB) (not shown) by those tin ball projections 184.
Referring to shown in Figure 2, the aforementioned image sensing module 20 of the present invention has the crystal three-dimensional stacking construction feature, be to utilize aforementioned crystal grain adhering film 142 that this image sensing crystal grain 12a is engaged with these image processing crystal grain 14 stacked on top, and utilize those vias of this image sensing crystal grain 12a and those interlayer holes of this insulating layer material 16 to insert conductive material formation vertical conduction intraconnections 163 and horizontal conductivity intraconnections 164, and form heavy distribution wires layer 165 those vertical conduction intraconnections 163 of electric connection and horizontal conductivity intraconnections 164 in these insulating layer material 16 surfaces simultaneously, electrically connect with the vertical and horizontal of setting up this image sensing crystal grain 12a and this image processing crystal grain 14, and then shorten the electric connection distance of this image sensing module 20, to reduce the consume of energy.Moreover the crystal three-dimensional stacking structure dress mode of this image sensing module 20 can reduce overall package area and height, and effectively increases the component density of unit are, to reduce manufacturing cost.
Fig. 3 is the structural section schematic diagram of second specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In second specific embodiment, the difference of the image sensing module 20 of the image sensing module 30 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of first specific embodiment is earlier these image sensor wafer 12 back sides to be formed most grooves earlier, the back side that is each this image sensing crystal grain 12a forms a groove earlier, again this image processing crystal grain 14 is positioned in this groove in heads mode, and utilizes a crystal grain adhering film 142 to engage this image sensing crystal grain 12a and this image processing crystal grain 14.Fig. 4 is the structural section schematic diagram of the 3rd specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 3rd specific embodiment, the image sensing module 40 of tool crystal three-dimensional stacking construction of the present invention is that with the difference of the image sensing module 20 of the tool crystal three-dimensional stacking construction of first specific embodiment this image processing crystal grain 14 is to engage with this image sensing crystal grain 12a with the back side, and the electric connection of the level between this image sensing crystal grain 12a and this image processing crystal grain 14 is set up by the heavy distribution wires layer 165 that is formed between this image processing crystal grain 14 and those tin ball projections 184.Fig. 5 is the structural section schematic diagram of the 4th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 4th specific embodiment, the difference of the image sensing module 40 of the image sensing module 50 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 3rd specific embodiment is that it is to be formed between this image sensing crystal grain 12a and this image processing crystal grain 14 that the level between this image sensing crystal grain 12a and this image processing crystal grain 14 electrically connects 166.
Fig. 6 is the structural section schematic diagram of the 5th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 5th specific embodiment, the image sensing module 60 of tool crystal three-dimensional stacking construction of the present invention is that with the difference of the image sensing module 20 of the tool crystal three-dimensional stacking construction of first specific embodiment this image processing crystal grain 14 is consistent with the grain size of this image sensing crystal grain 12a, and this image processing crystal grain 14 is embedded in this insulating layer material 16 in not, and most vias all connect this image sensing crystal grain 12a and this image processing crystal grain 14, form horizontal conductivity intraconnections 164 and vertical conduction intraconnections 163 by the interlayer hole of conductive material being inserted those vias and this insulating layer material 16 again, and the heavy distribution wires layer 165 that forms on these insulating layer material 16 surfaces simultaneously, electrically conduct with the vertical and horizontal of setting up this image sensing crystal grain 12a and this image processing crystal grain 14.In other words, the electric connection of the level between this image sensing crystal grain 12a and this image processing crystal grain 14 is to be formed between this image processing crystal grain 14 and those tin ball projections 184.Fig. 7 is the structural section schematic diagram of the 6th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 6th specific embodiment, the difference of the image sensing module 60 of the image sensing module 70 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 5th specific embodiment is that this image processing crystal grain 14 is to be engaged in this image sensing crystal grain 12a below with the back side, and the electric connection between this image sensing crystal grain 12a and this image processing crystal grain 14 is to finish through vertical conduction intraconnections 163 and heavy distribution wires layer 165 and in these image processing crystal grain 14 rear side.Fig. 8 is the structural section schematic diagram of the 7th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 7th specific embodiment, the difference of the image sensing module 70 of the image sensing module 80 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 6th specific embodiment is to accompany one deck insulating layer material 19 between this image sensing crystal grain 12a and this image processing crystal grain 14, and the electric connection of the level between this image sensing crystal grain 12a and this image processing crystal grain 14 166 is in this insulating layer material 19 that is formed between this image sensing crystal grain 12a and this image processing crystal grain 14.
Moreover, the image sensing module of the tool crystal three-dimensional stacking construction of the aforementioned various embodiment of the present invention also can in conjunction with and pile up that less radio-frequency element (RF component), light-emitting diode, antenna etc. are main, the passive device (not shown), so that the function of wireless transmission with oneself's illumination further to be provided.
In addition, the present invention also can be integrated into a System on Chip/SoC (System On Chip with aforementioned image sensing crystal grain 12a and image processing crystal grain 14, SOC) crystal grain, and this System on Chip/SoC crystal grain lower floor can be memory, less radio-frequency element, conformability passive device (Integrated Passive Device, IPD) another System on Chip/SoC crystal grain of element such as grade or its combination.
Fig. 9 is the structural section schematic diagram of the 8th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 8th specific embodiment, the image sensing crystal grain 901, one that the image sensing module 90 of tool crystal three-dimensional stacking construction of the present invention comprises a transmitting substrate 10, a tool IPF is integrated with System on Chip/SoC crystal grain 905, an insulating layer material 16, a protective layer 18 and most tin ball projections 184 of memory, less radio-frequency element and conformability passive device.This image sensing crystal grain 901 has a photosensitive region 121, and it is engaged in this transmitting substrate 10 belows by adhesion layer 101.Be embedded in this insulating layer material 16 in this System on Chip/SoC crystal grain 905 and be engaged in the back side of this image sensing crystal grain 901 by crystal grain adhering film 142.This protective layer 18 is formed at this insulating layer material 16 belows; and those tin ball projections 184 are arranged in the welding pad opening (not shown) of this protective layer 18; by those tin ball projections 184 image sensing module 90 of this tool crystal three-dimensional stacking construction directly is assembled on the circuit board, for example on the printed circuit board (PCB).
Figure 10 is the structural section schematic diagram of the 9th specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 9th specific embodiment, the difference of the image sensing module 90 of the image sensing module 100 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 8th specific embodiment is that memory 902, less radio-frequency element 903 and passive device 904 are embedded in this insulating layer material 16 in being and are engaged in the back side of this image sensing crystal grain 901 by crystal grain adhering film 142 respectively.Figure 11 is the structural section schematic diagram of the tenth specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the tenth specific embodiment, the difference of the image sensing module 90 of the image sensing module 110 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 8th specific embodiment is at least one light-emitting diode 906 is positioned over this image sensing crystal grain 901 tops, and corresponding each these light-emitting diode 906 top form a guide lighting channel 907 and a lens element 908 is formed at this guide lighting channel 907 tops in this transmitting substrate 10.Thus, the image sensing module 110 of this tool crystal three-dimensional stacking construction promptly has the function of oneself's illumination.Figure 12 is the structural section schematic diagram of the 11 specific embodiment of the image sensing module of tool crystal three-dimensional stacking construction of the present invention.In the 11 specific embodiment, the difference of the image sensing module 90 of the image sensing module 120 of tool crystal three-dimensional stacking construction of the present invention and the tool crystal three-dimensional stacking construction of the 8th specific embodiment is that the upper surface of this image sensing crystal grain 901 is to utilize sputter or plating mode to form antenna structure 909, so that the image sensing module 120 of this tool crystal three-dimensional stacking construction has the function of wireless transmission.
The above is specific embodiments of the invention only, is not in order to limit claim scope of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim scope of the present invention.
Claims (20)
1. the image sensing module of a tool crystal three-dimensional stacking construction is characterized in that, comprising:
At least one image sensing crystal grain;
At least one image processing crystal grain, this image sensing crystal grain engages with this image processing crystal grain stacked on top, wherein a sensing face of this image sensing crystal grain up, this image sensing crystal grain has most bar vertical wires, whereby to set up electrically conducting of vertical and horizontal with this image processing crystal grain;
One transmitting substrate is formed at above this sensing face of this image sensing crystal grain; And
A most conductivity weld pad are formed at this image sensing module back side.
2. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, also comprises an insulating barrier, and this image processing intragranular is embedded in wherein.
3. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, this image sensing crystal grain back side has a groove, to place this image processing crystal grain.
4. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, this image processing crystal grain is to face up or the mode of face down is stacked in this image sensing crystal grain below.
5. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1, it is characterized in that the level of this image sensing crystal grain and this image processing crystal grain electrically connects between this image processing crystal grain and those conductivity weld pads or this image processing crystal grain and this image sensing intergranule.
6. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, at least one this vertical wires connects this image sensing crystal grain and this image processing crystal grain.
7. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 6, it is characterized in that it is between this image processing crystal grain and those conductivity weld pads or this image processing crystal grain and this image sensing intergranule that the level of this image sensing crystal grain and this image processing crystal grain electrically connects.
8. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 6 is characterized in that, this image processing crystal grain is to face up or the mode of face down is stacked in this image sensing crystal grain below.
9. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, also comprises at least one light-emitting diode and is positioned at this image sensing crystal grain top.
10. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 9, it is characterized in that, also comprise at least one guide lighting channel and connect this transmitting substrate and be formed at this light-emitting diode top and at least one lens element is formed at this guide lighting channel top.
11. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, also comprises at least one antenna element and is formed at this image sensing crystal grain top.
12. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1 is characterized in that, also comprises an adhesion layer, to engage this image sensing crystal grain and this image processing crystal grain.
13. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 1, it is characterized in that, also comprise most tin ball projections, be formed at this conductivity weld pad below respectively, and this image sensing module and extraneous the generation electrically conducted by those tin ball projections.
14. the image sensing module of a tool crystal three-dimensional stacking construction is characterized in that, comprising:
At least one image sensing crystal grain contains IPF;
One insulating barrier is formed at this image sensing crystal grain below;
One System on Chip/SoC crystal grain engages with this image sensing crystal grain stacked on top, and wherein a sensing face of this image sensing crystal grain is embedded in this System on Chip/SoC in this insulating barrier up;
One transmitting substrate is formed at above this sensing face of this image sensing crystal grain; And
A most conductivity weld pad are formed at this image sensing module back side.
15. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 14 is characterized in that, this System on Chip/SoC crystal grain comprises memory, less radio-frequency element, conformability passive device, independently passive device or their combination.
16. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 14 is characterized in that, also comprises at least one light-emitting diode and is positioned at this image sensing crystal grain top.
17. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 16, it is characterized in that, also comprise at least one guide lighting channel and connect this transmitting substrate and be formed at this light-emitting diode top and at least one lens element is formed at this guide lighting channel top.
18. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 14 is characterized in that, also comprises at least one antenna element and is formed at this image sensing crystal grain top.
19. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 14 is characterized in that, also comprises an adhesion layer, to engage this image sensing crystal grain and this System on Chip/SoC crystal grain.
20. the image sensing module of tool crystal three-dimensional stacking construction as claimed in claim 14, it is characterized in that, also comprise most tin ball projections, be formed at this conductivity weld pad below respectively, and this image sensing module and extraneous the generation electrically conducted by those tin ball projections.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710112678A CN100585850C (en) | 2007-06-27 | 2007-06-27 | Image sensing module having crystal three-dimensional stacking construction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710112678A CN100585850C (en) | 2007-06-27 | 2007-06-27 | Image sensing module having crystal three-dimensional stacking construction |
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| CN101335267A true CN101335267A (en) | 2008-12-31 |
| CN100585850C CN100585850C (en) | 2010-01-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102412250A (en) * | 2011-11-04 | 2012-04-11 | 日月光半导体制造股份有限公司 | Semiconductor packaging structure, integrated passive element and fabrication method thereof |
| CN106257653A (en) * | 2015-06-17 | 2016-12-28 | 精材科技股份有限公司 | Wafer encapsulation body and manufacture method thereof |
| CN106356339A (en) * | 2015-07-13 | 2017-01-25 | 精材科技股份有限公司 | Chip package and method for forming the same |
| CN106611715A (en) * | 2015-10-21 | 2017-05-03 | 精材科技股份有限公司 | Chip package and method for forming the same |
| WO2021092777A1 (en) * | 2019-11-12 | 2021-05-20 | 深圳市汇顶科技股份有限公司 | Stacked chip, manufacturing method, image sensor, and electronic device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8786066B2 (en) * | 2010-09-24 | 2014-07-22 | Intel Corporation | Die-stacking using through-silicon vias on bumpless build-up layer substrates including embedded-dice, and processes of forming same |
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- 2007-06-27 CN CN200710112678A patent/CN100585850C/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102412250A (en) * | 2011-11-04 | 2012-04-11 | 日月光半导体制造股份有限公司 | Semiconductor packaging structure, integrated passive element and fabrication method thereof |
| CN106257653A (en) * | 2015-06-17 | 2016-12-28 | 精材科技股份有限公司 | Wafer encapsulation body and manufacture method thereof |
| CN106356339A (en) * | 2015-07-13 | 2017-01-25 | 精材科技股份有限公司 | Chip package and method for forming the same |
| US10056419B2 (en) | 2015-07-13 | 2018-08-21 | Xintec Inc. | Chip package having chip connected to sensing device with redistribution layer in insulator layer |
| CN106611715A (en) * | 2015-10-21 | 2017-05-03 | 精材科技股份有限公司 | Chip package and method for forming the same |
| WO2021092777A1 (en) * | 2019-11-12 | 2021-05-20 | 深圳市汇顶科技股份有限公司 | Stacked chip, manufacturing method, image sensor, and electronic device |
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| CN100585850C (en) | 2010-01-27 |
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