CN101331620B - Optical device and method of fabricating the same - Google Patents
Optical device and method of fabricating the same Download PDFInfo
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- CN101331620B CN101331620B CN200680047270.1A CN200680047270A CN101331620B CN 101331620 B CN101331620 B CN 101331620B CN 200680047270 A CN200680047270 A CN 200680047270A CN 101331620 B CN101331620 B CN 101331620B
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Abstract
Disclosed is an optical device including an optical member and a contact layer stacked on at least one of top and bottom surfaces of the optical member. The contact layer has at least one transparent conducting oxynitride (TCON) layer. The TCON consists of at least one of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and palladium (Pd).
Description
Technical field
The present invention relates to a kind of Optical devices.More particularly, the present invention relates to a kind of method that has high efficiency Optical devices and make these Optical devices.
Background technology
Recently, transparent conductive film is used in the various fields, such as photoelectric field, field of display and the energy industry field of using organic and inorganic material.In the field of the semiconductor light-emitting apparatus that comprises light-emitting diode and laser diode, must use material with superior electrical and optical characteristics, inject and current expansion with the promotion charge carrier, and help the emission of the photon of active layer (active layer) generation from semiconductor light-emitting apparatus.
Studied energetically of many domestic and international research of being devoted to the III-th family nitride light-emitting diode (III-th family nitride LED) that receives publicity as the light source of future generation that is used to throw light on is to develop transparent conductive film.As a result, recently, all tin indium oxides as is well known (ITO) and the transparent conductive material that comprises the zinc oxide (ZnO) of the doping of various impurity are used directly as the electrode of nitride-based LED.
In transparent conductive oxide (TCO), studied and developed indium oxide (In energetically
2O
3), tin oxide (SnO
2), cadmium oxide (CdO), zinc oxide (ZnO) and tin indium oxide (ITO).Top oxide has low relatively work function value, and reveals the characteristic that light transmittance reduces suddenly at luminous ray and ultraviolet frequency-range table, therefore goes wrong when top oxide being used for the transparency electrode of nitride LED.The problem that top oxide partly is used for nitride LED is as follows.
At first, because the work function value of traditional TCO or electrically conducting transparent nitride (TCN) is starkly lower than the work function value of the nitride-based covering of p type (cladding layer), so if TCO or TCN are used as p type ohmic contact layer, then forming high energy barrier at the interface, so very difficulty is injected in the hole with respect to carrier flow.Therefore, the unusual difficulty of the LED that realizes having high external quantum efficiency (EQE, external quantum efficiency).
In addition, because traditional TCO or TCN do not mate the electrical characteristics that form in the surface of the nitride-based covering of n type neatly, if so TCO or TCN as nitride-based Schottky of n type or ohmic contact electrode structure, can be difficult with respect to carrier flow control hole and injected hole then.Therefore, realizing having the light receiving diode of high light receiving efficiency or high external quantum efficiency (EQE) or LED is unusual difficulty.
Secondly, traditional TCO or TCN are with respect to being created among the nitride-based LED and showing low light transmittance from the specific light of nitride-based LED output.Say that at length TCO or TCN show low light transmittance with respect to the light that wave band is equal to or less than the wave band of blue light, so TCO or TCN are unsuitable for launching the LED of short wavelength's light.
The 3rd, because having, traditional TCO or TCN be roughly 2 big optical index, so light is transmitted into very difficulty of air by TCO or TCN.
Recently, by using nitride-based semiconductor, such as the electronic installation of transistor and photoelectric detector and such as the Optical devices of LED and laser diode (LD) by commercialization widely.In order to realize having the electrooptical device of premium properties, the touch controls technology that can improve the interfacial characteristics between III-th family nitride based semiconductor and the electrode is very important.
The LED that use comprises the nitride-based semiconductor of indium nitride (InN), gallium nitride (GaN) and aluminium nitride (AlN) is classified as top-emission LED (TELED) and flip-chip (flip-chip) LED (FCLED).
According to present existing TELED, export the light that produces from TELED by the p type ohmic contact layer that contacts with the nitride-based covering of p type.On the contrary, at FCLED (because compare with the realization of the heat dissipation of TELED, during operation, realize the heat dissipation of FCLED easily, so FCLED is manufactured to the big capacity LED of large scale) situation under, by using the p type ohmic contact layer of high reflection, by the light of transparent sapphire substrates emission from the active layer generation.
Because the nitride-based covering of p type has low hole density, so, adopt the LED of III-th family nitride based semiconductor can be not easy to the hole of various direction transmission as p type charge carrier at the nitride-based covering of p type place.Therefore, in order to use the nitride-based covering of p type to obtain to have the electrooptical device of premium properties, the high-quality p type ohmic contact layer that must need to have good current expansion characteristic.
In other words, in order to realize high-quality LED of future generation by use III-th family nitride based semiconductor, must develop such p type ohmic contact electrode structure, promptly, can improve the hole of the current expansion of horizontal direction and vertical direction and inject, and for luminous ray and have short-wave band light have a good optical characteristics (light transmittance or light reflectivity).
The p type ohmic contact layer of current widely used TELED comprises the oxidized nickel-Jin (Ni-Au) on the top that is formed on the nitride-based covering of p type.By using the electron beam evaporation plating device that thin nickel-Jin (Ni-Au) is deposited upon the top of the nitride-based covering of p type, then at oxygen (O
2) nickel-Jin (Ni-Au) layer annealing that will approach in the atmosphere, have about 10 thereby form
-3Ω cm
2To 10
-4Ω cm
2Low translucent ohmic contact layer than ohmic contact resistance value.In the wave band (being lower than 460nm) of blue light, oxidized Ni-Au ohmic contact layer has 75% or lower low light transmittance, so the Ni-Au ohmic contact layer is unsuitable for the p type ohmic contact layer of nitride-based LED of future generation.Because the low light transmittance of oxidized translucent Ni-Au ohmic contact layer, thus when about 500 ℃ to about 600 ℃ temperature at oxygen (O
2) in the atmosphere during, sentence the nickel oxide (NiO) of the form generation on island (island) as the p type semiconductor oxide at gallium nitride (GaN) that forms the nitride-based covering of p type and the contact interface that forms between the nickel (Ni) of ohmic contact layer with oxidized translucent Ni-Au ohmic contact layer annealing.In addition, gold (Au) places between the nickel oxide (NiO) that distributes with the form on island, simultaneously the top of capping oxidation nickel (NiO).Specifically, when at oxygen (O
2) in the time of will being deposited on the thin Ni-Au layer annealing on the nitride-based covering of p type in the atmosphere, form nickel oxide (NiO).Such nickel oxide (NiO) can reduce schottky barrier height and the schottky barrier width (SBH and SBW) that is formed between gallium nitride (GaN) and the electrode, thereby easily charge carrier is passed through in the electrode introducing device when applying external voltage.Because nickel oxide (NiO) can reduce the current expansion that SBH and SBW and Au component can improve horizontal direction, so thin oxidized Ni-Au layer demonstrates good ohm behavior (behavior), that is, and good electrical characteristics.
Except good ohm behavioral mechanism of thin Ni-Au layer, if after on the nitride-based covering of p type, having deposited thin Ni-Au layer,, then can remove the clean effectively Mg-H intermetallic compound of hole concentration of restriction in the nitride-based covering of p type with the nitride-based covering annealing of p type.Therefore, can be in the surface of the nitride-based covering of p type regeneration (reactivation) technology of concentration by increasing the magnesium alloy will clean effectively hole concentration be increased to and be higher than 10
18/ cm
3Level, thereby at the nitride-based covering of p type with comprise the tunnelling transportation takes place between the ohmic contact layer of nickel oxide.Therefore, the nitride-based covering of p type demonstrates the good ohm behavior with low specific contact resistivity value.
Yet, owing to adopt the TELED of the translucent p type ohmic contact electrode structure comprise oxidized Ni-Au layer to comprise by absorbing a large amount of light that produce from the LED active layer to reduce the Au component of light transmittance, therefore so described TELED shows low EQE, described TELED is unsuitable for the large scale and the jumbo LED that are provided for throwing light on.
Recently, document [T.Margalith et al., Appl.Phys.Lett.Vol 74.p3930 (1999)] disclose and the use of comparing transparent conductive oxide (such as ITO) as the light transmittance of the nickel-Jin structure of traditional p type multilayer ohmic contact layer with better light transmittance, to solve the problem of TELED and FCLED.Document (Solid-State Electronics vol.47.p849) shows the TELED that adopts the ITO ohmic contact layer and compares the power output that shows raising with the power output of the TELED that adopts traditional nickel-Jin structure.
Yet though the ohmic contact layer of the ITO ohmic contact layer above adopting can increase the power output of LED, described ohmic contact layer shows higher relatively operating voltage.This is because described ohmic contact layer is compared with the work function value of p type nitride-based semiconductor and had relative low work function value.Therefore, between p type nitride covering and ITO ohmic contact layer, form high Schottky barrier at the interface, thereby can be not easy to realize that charge carrier injects, therefore produce a large amount of heat and shorten life-span of semiconductor device.
As mentioned above, if will directly be deposited on such as the TCO of ITO or ZnO on the nitride-based covering of p type, then form the higher SBH and the SBW of broad, thereby can make the quality deterioration of ohmic contact layer.In order to solve such problem, be under the jurisdiction of GIST (Gwangju Institute of Science﹠amp; Technology, Korea) seminar discloses the test result of the high quality ohmic contact layer that comprises the particle with 100nm or littler size recently, promptly, described high quality ohmic contact layer is by inserting second tco layer between the nitride-based covering of p type and first tco layer, then resulting structures annealed and obtains.The nano particle that produces from the interface is causing electric field at the interface, thereby is converted to ohm behavior and reduces SBH and SBW by the Schottky behavior of this electric field with the TCO electrode.
Yet, has limited light-emitting zone by high transparent and high-quality p type ohmic contact layer that uses top technology manufacturing and the vertical LED that adopts described p type ohmic contact layer, and cause that during operation a large amount of heat dissipations, therefore top p type ohmic contact layer are unsuitable for the light source of future generation that is used to throw light on.
Summary of the invention
Technical problem
One object of the present invention is to provide a kind of high efficiency Optical devices.
Another object of the present invention is to provide a kind of method of making such Optical devices.
Technical scheme
In one aspect of the invention, a kind of Optical devices comprise optical component and contact layer.Contact layer comprises at least one electrically conducting transparent oxynitride (TCON) layer at least one of the top surface that is stacked on optical component and lower surface.Described TCON comprises from least a by what select the group of forming with the indium (In) of oxygen (O) and nitrogen (N) chemical combination, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and palladium (Pd).
Optical component comprise n type nitride covering, p type nitride covering and place n type nitride covering and p type nitride covering between active layer.Contact layer comprises at least one in n type contact layer that is formed on the n type nitride covering and the p type contact layer that is formed on the p type nitride covering.
In another aspect of this invention, a kind of method of making Optical devices comprises: form optical component, form contact layer by pile up at least one electrically conducting transparent oxynitride (TCON) layer at least one of the top surface of optical component and lower surface.Described TCON comprises from least a by what select the group of forming with the indium (In) of oxygen (O) and nitrogen (N) chemical combination, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and palladium (Pd).
Described method also is included in and forms the thermal process of carrying out after the contact layer.From about 100 ℃ to about 800 ℃ temperature, comprising from by nitrogen (N
2), oxygen (O
2), hydrogen (H
2), under at least a gas atmosphere selected in the group formed of argon gas (Ar), helium (He) and air, described thermal process is performed about 10 seconds to about 3 hours.
Beneficial effect
According to the present invention,, can improve ohmic contact characteristic, thereby can access high efficiency Optical devices by adopting electrically conducting transparent oxynitride (TCON).
Description of drawings
Fig. 1 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of first embodiment of the invention;
Fig. 2 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of second embodiment of the invention;
Fig. 3 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of third embodiment of the invention;
Fig. 4 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of fourth embodiment of the invention;
Fig. 5 to Fig. 8 shows the cutaway view of the various stacked structures of the many ohmic contact layers of p type on the nitride-based covering of the p type that is formed on shown in Fig. 1 to Fig. 4;
The cutaway view of the various stacked structures of the many ohmic contact layers of p type on the nitride-based covering of the p type that is formed on after Fig. 9 to Figure 12 shows on nano-scale particle being introduced the nitride-based covering of p type shown in Fig. 1 to Fig. 4;
Figure 13 is the cutaway view that illustrates according to the structure of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of fifth embodiment of the invention;
Figure 14 is the cutaway view that illustrates according to the structure of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of sixth embodiment of the invention;
Figure 15 is the cutaway view that illustrates according to the structure of the many ohmic contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of seventh embodiment of the invention;
Figure 16 is the cutaway view that illustrates according to the structure of the many ohmic contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of eighth embodiment of the invention;
Figure 17 to Figure 20 shows the cutaway view of the various stacked structures of many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on shown in Figure 13 to Figure 16 and ohmic contact layer;
The cutaway view of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on after Figure 21 to 24 shows on nano-scale particle being introduced the nitride-based covering of n type shown in Figure 13 to Figure 16 and the various stacked structures of ohmic contact layer;
Figure 25 shows the cutaway view according to the LED that is formed on the many ohmic contact layers of high transparent n type on the nitride-based covering of n type comprising of ninth embodiment of the invention;
Figure 26 shows the cutaway view according to the III-th family nitride class LED that is formed on the many ohmic contact layers of high transparent n type on the nitride-based covering of n type comprising of tenth embodiment of the invention.
Embodiment
Hereinafter, exemplary embodiment of the present invention is described with reference to the accompanying drawings.In the following description, the element with same structure and function can have identical label.
Fig. 1 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of first embodiment of the invention, and Fig. 2 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of second embodiment of the invention.
At length say, Fig. 1 shows the III-th family nitride class TELED that piles up/grow on the sapphire substrates 10 as the insulation growth substrate, Fig. 2 shows the III-th family nitride class TELED that is formed on the conductive substrates, the alloy that described conductive substrates comprises carborundum (SiC), zinc oxide (ZnO), silicon (Si), GaAs (GaAs), metal (such as copper (Cu), nickel (Ni) or aluminium (Al)) or forms by plating or bonding transfer scheme (bonding transfer scheme).
See figures.1.and.2, III-th family nitride class TELED comprises substrate 10, wherein, many ohmic contact layer 70 orders of low temperature nucleating layer (nucleation layer) 20, nitride-based resilient coating 30, the nitride-based covering 40 of n type, nitride-based active layer 50, the nitride-based covering 60 of p type and p type are formed in the substrate 10. Label 80 and 90 is represented p type electrode pad and n type electrode pad respectively.Here, from the nitride-based covering 60 of substrate 10 to p types the layer can be corresponding with ray structure, the structure that is stacked on the nitride-based covering 60 of p type can be corresponding with p type electrode structure.
Low temperature nucleating layer 20 is included in about 700 ℃ or lower following amorphous gallium nitride (GaN) or the aluminium nitride (AlN) that forms of low temperature.Can omit low temperature nucleating layer 20.Mainly comprise from the Al of the general formula that is expressed as the III-th family nitride compounds from each layer of the nitride-based covering 60 of nitride-based resilient coating 30 to p types
xIn
yGa
zThat selects in the compound of N (x, y and z are integer) is a kind of.To add nitride-based covering 40 of n type and the nitride-based covering 60 of p type respectively with the corresponding different alloy of n type and p type.
In addition, can prepare nitride-based active layer 50 with the form of the mixed structure of individual layer, Multiple Quantum Well (MQW) structure, many quantum dots, many quantum wires or many quantum dots, many quantum wires and Multiple Quantum Well.For example, if adopt the GaN compounds, then nitride-based resilient coating 30 comprises GaN, the nitride-based covering 40 of n type comprises GaN and joins the n type alloy of GaN, such as Si, Ge, Se, Te etc., and nitride-based active layer 50 comprises InGaN/GaN MQW structure or AlGaN/GaN MQW structure.In addition, the nitride-based covering 60 of p type comprises GaN and joins the p type alloy of GaN, such as Mg, Zn, Ca, Sr, Ba etc.
N type ohmic contact layer (not shown) can also be placed between nitride-based covering 40 of n type and the n type electrode pad 90.N type ohmic contact layer can have various structures.For example, n type ohmic contact layer has the stacked structure of titanium (Ti) and aluminium (Al).
Can form the many ohmic contact layers 70 of p type by at least one TCON layer of deposition on the nitride-based covering 60 of p type.Described TCON comprise from the group of the indium (In) of oxygen (O) and nitrogen (N) chemical combination, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and palladium (Pd) select at least a.
Preferably, described TCON can also comprise other metal component as alloy, to regulate electrical characteristics.According to present embodiment, the chemical element that is categorized as metal in the periodic table of elements can be used as the alloy of described TCON.Fluorine (F) or sulphur (S) can be used as alloy.Preferably, the ratio with 0.001 percentage by weight to 20 percentage by weight adds TCON with alloy.
Except described TCON, the many ohmic contact layers 70 of p type can also include metal, the alloy/solid solution (solidsolution) based on described metal, conductive oxide, transparent conductive oxide (TCO) and the electrically conducting transparent nitride (TCN) that is beneficial to formation Ohm contact electrode on the nitride-based covering 60 of p type, and irrelevant with their sedimentary sequence.
Described metal comprises platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru), iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn) or rare earth metal.In addition, alloy/solid solution can comprise the alloy/solid solution based on top metal.
Described conductive oxide comprises the oxide (Ni-O) of nickel, the oxide (Rh-O) of rhodium, the oxide (Ru-O) of ruthenium, the oxide (Ir-O) of iridium, the oxide (Cu-O) of copper, the oxide (Co-O) of cobalt, the oxide (W-O) or the titanyl compound (Ti-O) of tungsten.
Described TCO comprises indium oxide (In
2O
3), tin oxide (SnO
2), tin indium oxide (ITO), zinc oxide (ZnO), magnesium oxide (MgO), cadmium oxide (CdO), magnesium oxide zinc (MgZnO), indium zinc oxide (InZnO), tin indium oxide (InSnO), cupric oxide aluminium (CuAlO
2), silver oxide (Ag
2O), gallium oxide (Ga
2O
3), zinc-tin oxide (ZnSnO), zinc indium tin oxide (ZITO) or other oxide of combining with above-mentioned TCO.
Described TCN comprises titanium nitride (TiN), chromium nitride (CrN), tungsten nitride (WN), tantalum nitride (TaN) or niobium nitride (NbN).
The 3rd material can be added above-mentioned oxide and nitride as alloy, to improve the electrical characteristics of described oxide and nitride.
Preferably, the many ohmic contact layers 70 of p type have the thickness of about 1nm to about 1000nm.In addition, about 20 ℃ to about 1500 ℃ many ohmic contact layers 70 of temperature deposit p type.At this moment, the depositor of deposition p type many ohmic contact layers 70 in be pressed in about 10torr to the scope of about 12torr.
After having formed the many ohmic contact layers 70 of p type, preferably carry out annealing process.Carried out annealing process 10 seconds to 3 hours in vacuum or gas atmosphere, the internal temperature of reactor is set to about 100 ℃ to about 800 ℃ simultaneously.In the process of the annealing process of the many ohmic contact layers 70 of p type, with nitrogen, argon gas, helium, oxygen, hydrogen and airborne at least a sending in the reactor.
P type electrode pad 80 has the stacked structure of nickel (Ni)/gold (Au), silver (Ag)/gold (Au), titanium (Ti)/gold (Au), nickel (Ni)/gold (Au), palladium (Pd)/gold (Au) or chromium (Cr)/gold (Au).
Can perhaps form each layer of III-th family nitride class light-emitting diode by physical vapor deposition (PVD) such as PLD (pulsed laser deposition), dimorphism thermal evaporation or the sputter of electron beam or thermal evaporation, use lasing light emitter by chemical vapor deposition (CVD) such as plating that utilizes chemical reaction or metal organic chemical vapor deposition.
Fig. 3 shows the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of third embodiment of the invention, and Fig. 4 is the cutaway view according to the top-emission light-emitting diode (TELED) with the many ohmic contact electrode structures of p type of fourth embodiment of the invention.
At length say, Fig. 3 shows the III-th family nitride class TELED that piles up/grow on the sapphire substrates 10 as the insulation growth substrate, Fig. 4 shows the III-th family nitride class TELED that forms on conductive substrates, the alloy that described conductive substrates comprises carborundum (SiC), zinc oxide (ZnO), silicon (Si), GaAs (GaAs), metal (such as copper (Cu), nickel (Ni) or aluminium (Al)) or forms by plating or bonding transfer scheme.
Different with second embodiment with the first embodiment of the present invention, the third embodiment of the present invention and the 4th embodiment provide such stacked structure,, before forming the many ohmic contact layers 70 of p type, form tunnel junction layer 100 on the nitride-based covering 60 of p type that is.Except tunnel junction layer 100, the 3rd embodiment is corresponding with first embodiment, and the 4th embodiment is corresponding with second embodiment, and the detailed description that therefore will omit similar elements below is to avoid redundant.
With reference to Fig. 3 and Fig. 4, III-th family nitride class TELED comprises substrate 10, wherein, low temperature nucleating layer 20, nitride-based resilient coating 30, the nitride-based covering 40 of n type, nitride-based active layer 50, the nitride-based covering 60 of p type, the many ohmic contact layers 70 of p type and tunnel junction layer 100 orders are formed in the substrate 10.Label 80 and 90 is represented p type electrode pad and n type electrode pad respectively.
Here, from the nitride-based covering 60 of substrate 10 to p types the layer can be corresponding with ray structure, the structure that is stacked on the nitride-based covering 60 of p type can be corresponding with p type electrode structure.The material of low temperature nucleating layer 20, nitride-based resilient coating 30, the nitride-based covering 40 of n type, nitride-based active layer 50, the nitride-based covering 60 of p type and the many ohmic contact layers 70 of p type is identical with material and the manufacture method of first embodiment and second embodiment with manufacture method.
Fig. 5 to Fig. 8 shows the cutaway view of the various stacked structures of the many ohmic contact layers of p type on the nitride-based covering of the p type that is formed on shown in Fig. 1 to Fig. 4.
The many ohmic contact layers 70 of p type of the present invention comprise and oxygen (O
2) and nitrogen (N
2) at least one TCON layer of combination.Preferably, the form with individual layer, bilayer or multilayer prepares the many ohmic contact layers 70 of p type.
For example, as shown in Figure 5, the many ohmic contact layers 70 of p type can be prepared as the individual layer 70a that comprises TCON.In addition, as shown in Fig. 6 to Fig. 8, the many ohmic contact layers 70 of p type can be prepared as multilayer 70a, 70b, 70c and the 70d that comprises metal, alloy, solid solution, conductive oxide, TCO and TCON, and irrelevant with their sedimentary sequence.
The cutaway view of the various stacked structures of the many ohmic contact layers of p type on the nitride-based covering of the p type that is formed on after Fig. 9 to Figure 12 shows on nano-scale particle being introduced the nitride-based covering of p type shown in Fig. 1 to Fig. 4.
Before the many ohmic contact layers 70 of p type of the present invention are formed on the nitride-based covering 60 of p type, on the nitride-based covering 60 of p type, form nano-scale particle.Here, nano-scale particle comprises metal, alloy, solid solution, conductive oxide, TCO, TCN or the TCON that can control schottky barrier height and schottky barrier width, wherein, schottky barrier height and schottky barrier width are adjusted in the charge transfer of the charge carrier at the interface between nitride-based covering 60 of p type and the many ohmic contact layers 70 of p type.As mentioned above, the many ohmic contact layers 70 of p type comprise and oxygen (O
2) and nitrogen (N
2) at least one TCON layer of chemical combination.Preferably, the form with individual layer, bilayer or multilayer prepares the many ohmic contact layers 70 of p type.
For example, as shown in Figure 9, the many ohmic contact layers 70 of p type can be prepared as the individual layer 70a that comprises TCON.In addition, as shown in Figure 10 to Figure 12, the many ohmic contact layers 70 of p type can be prepared as multilayer 70a, 70b, 70c and the 70d that comprises metal, alloy, solid solution, conductive oxide, TCO and TCON, and irrelevant with their sedimentary sequence.
At length say, can be by piling up nickel (Ni)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), ruthenium (Ru)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), iridium (Ir)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of nickel (Ni-O)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of ruthenium (Ru-O)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of iridium (Ir-O)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), nickel (Ni)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), ruthenium (Ru)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), iridium (Ir)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of nickel (Ni-O)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of ruthenium (Ru-O)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), the oxide of iridium (Ir-O)/silver (Ag) or gold (Au)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), tin indium oxide (ITO) or zinc oxide (ZnO)/oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON), perhaps oxynitriding indium tin (ITON) or oxynitriding zinc (ZnON)/tin indium oxide (ITO) or zinc oxide (ZnO) prepare the many ohmic contact layers 70 of p type.
Figure 13 shows the cutaway view according to the structure of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of fifth embodiment of the invention, and Figure 14 shows the cutaway view according to the structure of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of sixth embodiment of the invention.
At length say, Figure 13 shows the many schottky contact layers 220 of high transparent n type that are formed directly on the nitride-based covering 210 of n type, Figure 14 shows the many schottky contact layers 220 of high transparent n type that are formed on the nitride-based covering 210 of n type, simultaneously tunnel junction layer 230 is inserted in the middle of them.
With reference to Figure 13 and Figure 14, the nitride-based covering 210 of n type mainly comprises from the Al of the general formula that is expressed as the III-th family nitride compounds
xIn
yGa
zThat selects in the compound of N (x, y and z are integer) is a kind of.To add the nitride-based covering 210 of n type individually or side by side such as the Si of IV family element and the alloy of Ge.
Can form the many schottky contact layers 220 of high transparent n type on the nitride-based covering 210 of n type by at least one TCON is deposited upon.
Described TCON mainly comprise from the group of the indium (In) of oxygen (O) and nitrogen (N) chemical combination, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), tantalum (Ta), vanadium (V), chromium (Cr), niobium (Nb), zirconium (Zr), silver (Ag), nickel (Ni), copper (Cu), cobalt (Co), gold (Au), platinum (Pt), rhenium (Re), iridium (Ir), tungsten (W), ruthenium (Ru) and palladium (Pd) select at least a.
Preferably, described TCON can also comprise other metal component as alloy to regulate electrical characteristics.According to present embodiment, the chemical element that is classified as metal in the periodic table of elements can be used as the alloy of described TCON.Fluorine (F) or sulphur (S) can be used as alloy.Preferably, alloy is added described TCON with the ratio of 0.001 percentage by weight to 20 percentage by weight.
Except described TCON, the many schottky contact layers 220 of high transparent n type can also include metal, the alloy/solid solution based on described metal, conductive oxide, transparent conductive oxide (TCO) and the electrically conducting transparent nitride (TCN) that is beneficial to formation Schottky contacts interface on the nitride-based covering 210 of n type, and irrelevant with their sedimentary sequence.
Described metal comprises platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru), iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn) or rare earth metal.In addition, alloy/solid solution can comprise the alloy/solid solution based on top metal.
Described conductive oxide comprises the oxide (Ni-O) of nickel, the oxide (Rh-O) of rhodium, the oxide (Ru-O) of ruthenium, the oxide (Ir-O) of iridium, the oxide (Cu-O) of copper, the oxide (Co-O) of cobalt, the oxide (W-O) or the titanyl compound (Ti-O) of tungsten.
Described TCO comprises indium oxide (In
2O
3), tin oxide (SnO
2), tin indium oxide (ITO), zinc oxide (ZnO), magnesium oxide (MgO), cadmium oxide (CdO), magnesium oxide zinc (MgZnO), indium zinc oxide (InZnO), tin indium oxide (InSnO), cupric oxide aluminium (CuAlO
2), silver oxide (Ag
2O), gallium oxide (Ga
2O
3), zinc-tin oxide (ZnSnO), zinc indium tin oxide (ZITO) or with other oxide of above-mentioned TCO chemical combination.
Described TCN comprises titanium nitride (TiN), chromium nitride (CrN), tungsten nitride (WN), tantalum nitride (TaN) or niobium nitride (NbN).
The 3rd material can be added above-mentioned oxide and nitride as alloy, to improve the electrical characteristics of described oxide and nitride.
Preferably, the many schottky contact layers 220 of high transparent n type have the thickness of about 1nm to about 1000nm.In addition, at about 20 ℃ of many schottky contact layers 220 of the high transparent n type of extremely about 1500 ℃ temperature deposit.At this moment, deposit the many schottky contact layers 220 of high transparent n type depositor in be pressed in about 10torr to the scope of about 12torr.
After having formed the many schottky contact layers 220 of high transparent n type, preferably carry out annealing process.Carry out 10 seconds to 3 of annealing process hour in vacuum or gas atmosphere, the internal temperature of reactor is set to about 100 ℃ to about 800 ℃ simultaneously.In the process of annealing process, with nitrogen, argon gas, helium, oxygen, hydrogen and airborne at least a sending in the reactor.
Among the embodiment shown in Figure 14, tunnel junction layer 230 mainly comprises from the Al that is expressed as that is made up of the III-V group element
aIn
bGa
cN
xP
yAs
zThat selects in the compound of (a, b, c, x, y and z are integer) is a kind of.Can prepare tunnel junction layer 230 with the form of individual layer with about 50nm or littler thickness.Preferably, prepare tunnel junction layer 230 with form double-deck, three layers or multilayer.
In addition, can perhaps form each layer of tunnel junction layer 230 by physical vapor deposition (PVD) such as PLD (pulsed laser deposition), dimorphism thermal evaporation or the sputter of electron beam or thermal evaporation, use lasing light emitter by chemical vapor deposition (CVD) such as plating that utilizes chemical reaction or metal organic chemical vapor deposition.
Figure 15 shows the cutaway view according to the structure of the many ohmic contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of seventh embodiment of the invention, and Figure 16 shows the cutaway view according to the structure of the many ohmic contact layers of high transparent n type on the nitride-based covering of the n type that is formed on of eighth embodiment of the invention.
At length say, Figure 15 shows the many ohmic contact layers 240 of high transparent n type that are formed directly on the nitride-based covering 360 of n type, Figure 16 shows the many ohmic contact layers 240 of high transparent n type that are formed on the nitride-based covering 360 of n type, simultaneously tunnel junction layer 380 is inserted in the middle of them.
Therefore the 7th embodiment is corresponding with the 5th embodiment, and the 8th embodiment is corresponding with the 6th embodiment, will omit detailed description to similar elements below to avoid redundancy.
With reference to Figure 15 and Figure 16, the nitride-based covering 360 of n type mainly comprises from the Al of the general formula that is expressed as the III-th family nitride compounds
xIn
yGa
zThat selects in the compound of N (x, y and z are integer) is a kind of.Can will add the nitride-based covering 360 of n type individually or side by side such as the Si of IV family element and the alloy of Ge.
Can form the many ohmic contact layers 240 of high transparent n type on the nitride-based covering 360 of n type by at least one TCON is deposited upon.
TCON is identical with the component of the 5th embodiment and the 6th embodiment with the component of the alloy of adjusting electrical characteristics with adding TCON.
Simultaneously, the many ohmic contact layers 240 of high transparent n type not only can comprise TCON, and it is can include metal, alloy/solid solution, conductive oxide, transparent conductive oxide (TCO), the electrically conducting transparent nitride (TCN) that is beneficial to formation Ohm contact electrode on the nitride-based covering 360 of n type, and irrelevant with their sedimentary sequence based on described metal.The component of described metal, the alloy/solid solution based on described metal, conductive oxide, transparent conductive oxide (TCO) and electrically conducting transparent nitride (TCN) is identical with the component of the 5th embodiment and the 6th embodiment.In addition, the 3rd material can be added above-mentioned oxide and nitride to improve the electrical characteristics of described oxide and nitride as alloy.
Preferably, the many ohmic contact layers 240 of high transparent n type have the thickness of about 1nm to about 1000nm.In addition, at about 20 ℃ of many ohmic contact layers 240 of the high transparent n type of extremely about 1500 ℃ temperature deposit.At this moment, deposit the many ohmic contact layers 240 of high transparent n type depositor in be pressed in about 10torr to the scope of about 12torr.
After having formed the many ohmic contact layers 240 of high transparent n type, preferably carry out annealing process.Carry out 10 seconds to 3 of annealing process hour in vacuum or gas atmosphere, the internal temperature of reactor is set to about 100 ℃ to about 800 ℃ simultaneously.In the process of annealing process, with nitrogen, argon gas, helium, oxygen, hydrogen and airborne at least a sending in the reactor.
Among the embodiment shown in Figure 16, tunnel junction layer 380 mainly comprises from the Al that is expressed as that is made up of the III-V group element
aIn
bGa
cN
xP
yAs
zThat selects in the compound of (a, b, c, x, y and z are integer) is a kind of.Can prepare tunnel junction layer 380 with the form of single or multiple lift.In addition, tunnel junction layer 380 can have superlattice structure.
In addition, can be by such as the physical vapor deposition (PVD) of PLD (pulsed laser deposition), dimorphism thermal evaporation or the sputter of electron beam or thermal evaporation, use lasing light emitter or form each layer of tunnel junction layer 380 by chemical vapor deposition (CVD) such as plating that utilizes chemical reaction or metal organic chemical vapor deposition.
Figure 17 to Figure 20 shows the cutaway view of the various stacked structures of many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on shown in Figure 13 to Figure 16 and ohmic contact layer.
With reference to Figure 17 to Figure 20, can prepare the many schottky contact layers 220 of high transparent n type that are formed on the nitride-based covering 210 of n type with the form of the individual layer 220a that comprises at least one TCON layer, double- deck 220a and 220b or multilayer 220a, 220b, 220c and 220d.The function and the structure of the many schottky contact layers 220 of high transparent n type shown in Figure 17 to Figure 20 similarly are applied to the many ohmic contact layers 240 of high transparent n type.
The cutaway view of the many schottky contact layers of high transparent n type on the nitride-based covering of the n type that is formed on after Figure 21 to Figure 24 shows on nano-scale particle being introduced the nitride-based covering of n type shown in Figure 13 to Figure 16 and the various stacked structures of ohmic contact layer.
With reference to Figure 21 to Figure 24, before the many schottky contact layers 220 of the transparent n type of height are formed on the nitride-based covering 210 of n type, on the nitride-based covering 210 of n type, form nano-scale particle 250, nano-scale particle 250 can be controlled as the schottky barrier height of interfacial characteristics and schottky barrier width, and described interfacial characteristics applies big influence to the charge transfer of charge carrier.Nano-scale particle 250 comprises metal, alloy, solid solution, conductive oxide, TCO, TCN or the TCON that can control schottky barrier width and schottky barrier height, wherein, schottky barrier width and the schottky barrier height charge transfer of regulating charge carrier at the interface between nitride-based covering 210 of n type and the many schottky contact layers 220 of high transparent n type.Then, oxygen (O
2) and nitrogen (N
2) combine with nano-scale particle 250, thereby form the individual layer 220a that comprises at least one TCON layer, double- deck 220a and 220b or multilayer 220a, 220b, 220c and 220d.The function and the structure of the many schottky contact layers 220 of high transparent n type shown in Figure 21 to Figure 24 similarly are applied to the many ohmic contact layers 240 of high transparent n type.
Figure 25 shows the cutaway view according to the LED that is formed on the many ohmic contact layers of high transparent n type on the nitride-based covering of n type comprising of ninth embodiment of the invention, and Figure 26 shows the cutaway view according to the III-th family nitride class LED that is formed on the many ohmic contact layers of high transparent n type on the nitride-based covering of n type comprising of tenth embodiment of the invention.
At length say, Figure 25 and Figure 26 show the structure that is formed on the vertical LED on the conductive substrates, wherein, conductive substrates comprises carborundum (SiC), zinc oxide (ZnO), silicon (Si), GaAs (GaAs), metal (such as copper (Cu), nickel (Ni) or aluminium (Al)) or passes through plating or the alloy of bonding transfer scheme formation.
With reference to Figure 25 and Figure 26, described LED comprises conductive substrates 310, wherein, bonding material layer 320, high reflection p type ohmic contact layer 330, the nitride-based covering 340 of p type, nitride-based active layer 350, the nitride-based covering 360 of n type and many ohmic contact layer 240 orders of high transparent n type are formed on the conductive substrates 310. Label 380 and 370 represents to be used to improve the tunnel junction layer and the n type electrode pad of the characteristic of the many ohmic contact layers 240 of high transparent n type respectively.
Mainly comprise from the Al of the general formula that is expressed as the III-th family nitride compounds from each layer of the nitride-based covering 340 of nitride-based covering 360 to the p types of n type
xIn
yGa
zThat selects in the compound of N (x, y and z are integer) is a kind of.Alloy is added nitride-based covering 360 of n type and the nitride-based covering 340 of p type.In addition, can prepare nitride-based active layer 350 with the form of the mixed structure of individual layer, Multiple Quantum Well (MQW) structure, many quantum dots, many quantum wires or many quantum dots, many quantum wires and MQW.
For example, can form the nitride-based covering 360 of n type by joining GaN such as the n type alloy of Si, Ge, Se, Te etc.In addition, can prepare nitride-based active layer 350, can form the nitride-based covering 340 of p type by joining GaN such as the p type alloy of Mg, Zn, Ca, Sr, Ba etc. with the form of InGaN/GaN MQW structure or AlGaN/GaN MQW structure.
Can form the many ohmic contact layers 240 of high transparent n type by at least one TCON layer of deposition on the nitride-based covering 360 of n type.Described TCON mainly is made up of metal, oxygen (O) and nitrogen (N) in fact with described TCON chemical combination.Preferably, described TCON can also comprise alloy to regulate electrical characteristics.
Except described TCON, the many ohmic contact layers 240 of high transparent n type can also include metal, the alloy/solid solution based on described metal, conductive oxide, transparent conductive oxide (TCO) and the electrically conducting transparent nitride (TCN) that is beneficial to formation Ohm contact electrode on the nitride-based covering 360 of n type, and irrelevant with their sedimentary sequence.
Identical as the composition of the metal of the composition of the metal of the key component of TCON, alloy and percentage and metal/alloy/solution/conductive oxide/TCO/TCN structure and the 7th embodiment, alloy and percentage and metal/alloy/solution/conductive oxide/TCO/TCN structure as the TCON key component.
Preferably, the many ohmic contact layers 240 of high transparent n type have the thickness of about 1nm to about 1000nm.In addition, at about 20 ℃ of many ohmic contact layers 240 of the high transparent n type of extremely about 1500 ℃ temperature deposit.At this moment, deposit the many ohmic contact layers 240 of high transparent n type depositor in be pressed in about 10torr to the scope of about 12torr.
After having formed the many ohmic contact layers 240 of high transparent n type, preferably carry out annealing process.Carry out 10 seconds to 3 of annealing process hour in vacuum or gas atmosphere, the internal temperature of reactor is set to about 100 ℃ to about 800 ℃ simultaneously.In the process of annealing process, with nitrogen, argon gas, helium, oxygen, hydrogen and airborne at least a sending in the reactor.
N type electrode pad 370 has stacked structure, wherein, and sequential aggradation nickel (Ni)/gold (Au), silver (Ag)/gold, titanium (Ti)/gold, palladium (Pd)/gold or chromium (Cr)/gold.
Can be by such as the physical vapor deposition (PVD) of PLD (pulsed laser deposition), dimorphism thermal evaporation or the sputter of electron beam or thermal evaporation, use lasing light emitter or form each layer of described LED by chemical vapor deposition (CVD) such as the plating of adopting chemical reaction or metal organic chemical vapor deposition.
Utilizability on the industry
As mentioned above, can be used in the various devices such as optical pickup apparatus, light-emitting device, light emitting diode, Organic Light Emitting Diode (OLED) or solar cell (solar cell) according to Optical devices of the present invention.
Claims (20)
1. Optical devices comprise:
Optical component;
Contact layer comprises at least one electrically conducting transparent oxynitride (TCON) layer at least one of the top surface that is stacked on optical component and lower surface,
Wherein, described TCON comprises from least a by what select the group of forming with the indium (In) of oxygen (O) and nitrogen (N) chemical combination, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and palladium (Pd).
2. Optical devices as claimed in claim 1, wherein, optical component comprise n type nitride covering, p type nitride covering and place n type nitride covering and p type nitride covering between active layer.
3. Optical devices as claimed in claim 2, wherein, contact layer comprises at least one in n type contact layer that is formed on the n type nitride covering and the p type contact layer that is formed on the p type nitride covering.
4. Optical devices as claimed in claim 1, wherein, described TCON also comprises alloy, and to regulate electrical characteristics, alloy comprises select at least a from the group of being made up of metal, fluorine (F) and sulphur (S).
5. Optical devices as claimed in claim 4 wherein, add described TCON with the ratio of 0.001 percentage by weight to 20 percentage by weight with described alloy.
6. Optical devices as claimed in claim 1, wherein, contact layer also comprises select at least a from the group of being made up of the metal that combines with the TCON layer, alloy/solid solution, conductive oxide, transparent conductive oxide (TCO) and electrically conducting transparent nitride (TCN) based on described metal.
7. Optical devices as claimed in claim 6, wherein, described metal comprises select at least a from the group of being made of platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru), iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn) and rare earth metal
Described conductive oxide comprises from least a by what select the oxide (W-O) of the oxide (Co-O) of the oxide (Cu-O) of the oxide (Ir-O) of the oxide (Ru-O) of the oxide (Rh-O) of the oxide (Ni-O) of nickel, rhodium, ruthenium, iridium, copper, cobalt, tungsten or the group that titanyl compound (Ti-O) is formed
Described TCO comprises from by indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), magnesium oxide (MgO), cadmium oxide (CdO), magnesium oxide zinc (MgZnO), indium zinc oxide (InZnO), tin indium oxide (InSnO), cupric oxide aluminium (CuAlO
2), silver oxide (Ag
2O), gallium oxide (Ga
2O
3), select in the group formed of zinc-tin oxide (ZnSnO), zinc indium tin oxide (ZITO) at least a,
Described TCN comprises select at least a from the group of being made of titanium nitride (TiN), chromium nitride (CrN), tungsten nitride (WN), tantalum nitride (TaN) or niobium nitride (NbN).
8. Optical devices as claimed in claim 7, also comprise and be introduced into the nano-scale particle to combine on the nitride covering with contact layer, wherein, nano-scale particle comprises select at least a from the group of being made up of metal, alloy/solid solution, conductive oxide, transparent conductive oxide (TCO) and conductive nitride (TCN) based on described metal.
9. Optical devices as claimed in claim 1 also comprise tunnel junction layer, place between optical component and the contact layer, and comprise from the Al that is expressed as that is made up of the III-V group element
aLn
bGa
cN
xP
yAs
zThat selects in the compound of (a, b, c, x, y and z are integer) is a kind of.
10. Optical devices as claimed in claim 1 wherein, are applied in optical pickup apparatus, light-emitting device, light-emitting diode, Organic Light Emitting Diode (OLED) and the solar cell any one with optical component.
11. a method of making Optical devices, described method comprises:
Form optical component;
Form contact layer by at least one of the top surface of optical component and lower surface, piling up at least one electrically conducting transparent oxynitride (TCON) layer,
Wherein, described TCON comprises from least a by what select the group of forming with the indium (In) of oxygen (O) and nitrification, tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminium (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and palladium (Pd).
12. method as claimed in claim 11, wherein, optical component comprise n type nitride covering, p type nitride covering and place n type nitride covering and p type nitride covering between active layer.
13. method as claimed in claim 12, wherein, contact layer comprises at least one in n type contact layer that is formed on the n type nitride covering and the p type contact layer that is formed on the p type nitride covering.
14. method as claimed in claim 11, wherein, described TCON also comprises alloy, and to regulate electrical characteristics, alloy comprises select at least a from the group of being made up of metal, fluorine (F) and sulphur (S).
15. method as claimed in claim 14 wherein, adds described TCON with the ratio of 0.001 percentage by weight to 20 percentage by weight with described alloy.
16. method as claimed in claim 11, wherein, contact layer also comprises at least a of selecting of combining with the TCON layer from the group of being made up of metal, alloy/solid solution, conductive oxide, transparent conductive oxide (TCO) and electrically conducting transparent nitride (TCN) based on described metal.
17. method as claimed in claim 16, wherein, described metal comprises select at least a from the group of being made of platinum (Pt), palladium (Pd), nickel (Ni), gold (Au), rhodium (Rh), ruthenium (Ru), iridium (Ir), silver (Ag), zinc (Zn), magnesium (Mg), beryllium (Be), copper (Cu), cobalt (Co), tin (Sn) and rare earth metal
Described conductive oxide comprises from least a by what select the oxide (W-O) of the oxide (Co-O) of the oxide (Cu-O) of the oxide (Ir-O) of the oxide (Ru-O) of the oxide (Rh-O) of the oxide (Ni-O) of nickel, rhodium, ruthenium, iridium, copper, cobalt, tungsten or the group that titanyl compound (Ti-O) is formed
Described TCO comprises from by indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), magnesium oxide (MgO), cadmium oxide (CdO), magnesium oxide zinc (MgZnO), indium zinc oxide (InZnO), tin indium oxide (InSnO), cupric oxide aluminium (CuAlO
2), silver oxide (Ag
2O), gallium oxide (Ga
2O
3), select in the group formed of zinc-tin oxide (ZnSnO), zinc indium tin oxide (ZITO) at least a,
Described TCN comprises select at least a from the group of being made of titanium nitride (TiN), chromium nitride (CrN), tungsten nitride (WN), tantalum nitride (TaN) or niobium nitride (NbN).
18. method as claimed in claim 17, wherein, nano-scale particle is introduced on the nitride covering to combine with contact layer, wherein, nano-scale particle comprises select at least a from the group of being made up of metal, alloy/solid solution, conductive oxide, transparent conductive oxide (TCO) and conductive nitride (TCN) based on described metal.
19. method as claimed in claim 11 also is included in the formation contact layer and carries out thermal process afterwards.
20. method as claimed in claim 19 wherein, under 100 ℃ to 800 ℃ temperature, is comprising from by nitrogen (N
2), oxygen (O
2), hydrogen (H
2), under at least a gas atmosphere selected in the group formed of argon gas (Ar), helium (He) and air, described thermal process is performed 10 seconds to 3 hours.
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| KR1020050124258A KR100794304B1 (en) | 2005-12-16 | 2005-12-16 | Optical device and Method of fabricating the same |
| KR20050124260A KR100784382B1 (en) | 2005-12-16 | 2005-12-16 | Optical device and Method of fabricating the same |
| KR10-2005-0124258 | 2005-12-16 | ||
| KR1020050124260 | 2005-12-16 | ||
| KR10-2005-0124260 | 2005-12-16 | ||
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| GB0802916D0 (en) | 2008-02-18 | 2008-03-26 | Newman Anthony I | Materials |
| EP2280427B1 (en) * | 2008-04-25 | 2013-08-21 | LG Innotek Co., Ltd | Light emitting diode |
| JP4881451B2 (en) | 2010-03-08 | 2012-02-22 | 株式会社東芝 | Semiconductor light emitting device |
| CN102610717B (en) * | 2011-01-20 | 2015-02-25 | 赛恩倍吉科技顾问（深圳）有限公司 | Semiconductor lighting chip and manufacturing method thereof |
| TWI466343B (en) | 2012-01-06 | 2014-12-21 | Phostek Inc | Light-emitting diode device |
| CN103199163B (en) * | 2012-01-06 | 2016-01-20 | 华夏光股份有限公司 | Light-emitting diode assembly |
| CN102916103B (en) * | 2012-09-18 | 2017-05-03 | 中山大学 | Thin film structure transparent electrode and preparation method thereof |
| KR101388432B1 (en) * | 2013-05-02 | 2014-04-25 | 한국과학기술연구원 | Se or s based thin film solar cell and method for fabricating the same |
| US9425351B2 (en) * | 2014-10-06 | 2016-08-23 | Wisconsin Alumni Research Foundation | Hybrid heterostructure light emitting devices |
| US9620592B2 (en) * | 2015-02-12 | 2017-04-11 | International Business Machines Corporation | Doped zinc oxide and n-doping to reduce junction leakage |
| KR101947604B1 (en) * | 2015-03-25 | 2019-02-14 | 주식회사 엘지화학 | Conductive structure body and method for manufacturing the same |
| US9899556B2 (en) | 2015-09-14 | 2018-02-20 | Wisconsin Alumni Research Foundation | Hybrid tandem solar cells with improved tunnel junction structures |
| KR102452651B1 (en) | 2015-10-19 | 2022-10-06 | 삼성전자주식회사 | Electrical conductors, production methods thereof, and electronic devices including the same |
| WO2018175751A1 (en) | 2017-03-24 | 2018-09-27 | Wisconsin Alumni Research Foundation | Group iii-v nitride-based light emitting devices having multilayered p-type contacts |
| US10217897B1 (en) | 2017-10-06 | 2019-02-26 | Wisconsin Alumni Research Foundation | Aluminum nitride-aluminum oxide layers for enhancing the efficiency of group III-nitride light-emitting devices |
| KR102552891B1 (en) * | 2018-03-19 | 2023-07-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | Solar cell |
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