CN101278409A - Flip-chip light emitting diodes and method of manufacturing thereof - Google Patents
Flip-chip light emitting diodes and method of manufacturing thereof Download PDFInfo
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Abstract
Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
Description
Technical field
The present invention relates to a kind of flip-chip nitride-based illuminating device and preparation method thereof.More particularly, the present invention relates to a kind of flip-chip nitride-based illuminating device and preparation method thereof with the electrode structure that can improve luminous efficiency.
Background technology
Ohmic contact structure between semiconductor and the electrode is to realizing using the light-emitting device of nitride-based compound semiconductor, for example light-emitting diode (LED) and laser diode (LD) are very important, and described nitride-based compound semiconductor for example is gallium nitride (GaN) semiconductor of emission indigo plant and green glow and ultraviolet light.At present, the gallium nitride base light emitting device of commercially available acquisition mainly is formed on insulation sapphire (Al
2O
3) on the substrate.
Simultaneously, these gallium nitride base light emitting devices roughly are divided into top light emitting diode (TLED) and flip-chip LED (FCLED).
Thereby the top light emitting diode structure that uses before the configuration purpose makes it come luminous by the ohmic electrode layer that contacts with p-type coating.
In addition, the Ohm contact electrode that has the transparency and low sheet resistance value by exploitation, top emission device can overcome the problem with the electrology characteristic difference correlation, and for example the low current that is caused by the film characteristics with low hole concentration p-type coating injects and current spread.
Usually, for these top emission device, the translucent nickel (Ni) of widely-used oxidation/gold (Au) metallic film is as based on the transition metal metallic film structure of nickel (Ni) metal for example.
According to reports, when at oxygen (O
2) when annealing in the environment, nickel (Ni) Base Metal film forms has about 10
-3-10
-4Ω/cm
2The translucent ohmic contact layer of contact resistivity.
When at oxygen (O
2) in the environment when 500-600 ℃ annealing temperature, the contact resistivity of so low ohmic contact layer can cause between the gold layer that forms island shape at the interface between p-type gallium nitride and the nickel (Ni) and nickel oxide (NiO) is formed at top, it is a kind of p-type semiconductor oxide, this has caused the reduction of schottky barrier height (SBH), therefore the easy on every side of gallium nitride layer surface supplied with reigning charge carrier hole, thereby causes the increase of efficient carrier concentration on every side on gallium nitride layer surface.On the other hand, very clearly, after contacting, Mg-H intermetallic complex compound has been removed in the annealing of nickel (Ni)/gold (Au), therefore caused surpassing 10 by the regenerative process that increases magnesium concentration of dopant on the gallium nitride layer surface in the efficient carrier concentration on p-type gallium nitride layer surface with p-type gallium nitride
19, this cause subsequently tunnel between p-type gallium nitride layer and the electrode layer (nickel dam that contains the oxidation of gold) oppositely, shown ohm conductive characteristic thus.
Yet, use the light utilization ratio of top light emitting diode of the semitransparent electrode film of forming by nickel/gold low, this makes it be difficult to realize the light-emitting device of big capacity, high brightness.
Recently, in order to realize the light-emitting device of big capacity, high brightness, need exploitation to use silver (Ag), the silver oxide (Ag that is being subjected to extensive concern
2O) or aluminium (Al) as the flip-chip light emitting device of high reflection layer material.
Simultaneously, these metal materials that are used for the reflector have high reflection efficiency, therefore can provide high instantaneous light emission efficient, but because its low work function causes it to be difficult to form the ohmic contact with low-resistance value, this causes the minimizing of device lifetime and the low of gallium nitride is adhered to, and therefore can not provide stable device reliability.
More specifically comment about using silver and aluminium problem as reflector material:
At first, aluminium (Al) demonstrates low work function, even and under low relatively annealing temperature, also form nitride (AlN) easily, this makes it be difficult to form ohmic contact with p-type gallium nitride.
Secondly, silver (Ag) forms high-quality ohmic contact and demonstrates high reflectance, but it is heat-labile, therefore is difficult to form high-quality film by film formation process.That is to say that because its thermal instability, silver (Ag) film coacervation occurs at the commitment of annealing, and become space, projection and island through changing, cause the degeneration of electricity and optical characteristics thus in the final stage of annealing.
Recently, for with the application extension of light-emitting device to having large tracts of land and jumbo high brightness luminescence device for example light for vehicle, home lighting etc., people are carrying out extensive studies exploitation energetically and are having the ohmic contact layer that the lower contact resistance value provides high reflectance simultaneously.
People such as Mensz have proposed as double-deck nickel (Ni)/aluminium (Al) and nickel (Ni)/silver (Ag) structure (Electronics Letters, 33 (24), the 2066th page), but this structure is difficult to form ohmic contact, therefore and caused and produced the relevant problem of big calorimetric that described a large amount of heat is that the high operation voltage during owing to operating light-emitting diodes (leds) produces.
In addition, people such as Michael R.Krames has reported recently to nickel (Ni)/silver (Ag) and gold (Au)/nickel oxide (NiO
xThe research and development (U.S. Patent Publication No. 2002/0171087A1) of)/aluminium (Al) electrode structure.Yet these electrode structures also have shortcoming, for example low tack and because the low luminous efficiency that the scattering (reflective scattering) of reflecting causes.
Summary of the invention
Technical problem
Therefore, consider that the problems referred to above have carried out the present invention, and the high quality ohmic contact electrode that an object of the present invention is to have by application thermal stability and high reliability provides flip-chip nitride-based illuminating device with superior electrical characteristic and preparation method thereof.
Technical scheme
According to the first embodiment of the present invention, above-mentioned purpose and other purpose can realize that described light-emitting device is included in formed reflector on the described p-type coating by a kind of flip-chip nitride-based illuminating device that has active layer between n-type coating and p-type coating is provided; And at least one is inserted in the transparent conductive film layer of being made up of transparent conductive material between described p-type coating and the described reflector, and described transparent conductive material can suppress to constitute the diffusion of the material in reflector.
The flip-chip nitride-based illuminating device of second execution mode may further include formed interface modification layer between described p-type coating and transparent conductive film layer according to the present invention.
The flip-chip nitride-based illuminating device of the 3rd execution mode may further include formed insertion metal level between interface modification layer and transparent conductive film layer according to the present invention.
The 4th to the 6th execution mode according to the present invention, the flip-chip nitride-based illuminating device that has active layer between n-type coating and p-type coating comprises many ohmic contact layers and the reflector of being made up of reflecting material on described many ohmic contact layers, described many ohmic contact layers comprise as stacked repetitive and are stacked in interface modification layer on the p-type coating and at least one transparent conductive film layer.
In order to reach above-mentioned purpose of the present invention, the invention provides a kind of preparation method who between n-type coating and p-type coating, has the flip-chip nitride-based illuminating device of active layer, this method comprises:
A) form at least one transparent conductive film layer on the p-of ray structure type coating, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described transparent conductive film layer, form the reflector; With
C) with the resulting structure annealing that comprises described reflector.
Preferably, the preparation method of flip-chip nitride-based illuminating device may further include after step a) and the annealing steps before forming described reflector.
In addition, according to another method of the present invention, provide the preparation method who has the flip-chip nitride-based illuminating device of active layer between n-type coating and p-type coating, this method comprises:
A) form the interface modification layer on the p-of ray structure type coating, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described interface modification layer, form at least one transparent conductive film layer of forming by transparent conductive material;
C) on described transparent conductive film layer, form the reflector; With
D) will formed structure annealing in step c).
Preferably, said method may further include after step b) and the annealing steps before forming described reflector.
Preferably, said method may further include to form on the interface modification layer before forming described transparent conductive film layer and inserts metal level.
In addition, the further method according to the present invention provides the preparation method who has the flip-chip nitride-based illuminating device of active layer between n-type coating and p-type coating, and this method comprises:
A) on the p-of ray structure type coating by stacked as stacked repetitive the interface modification layer and at least one transparent conductive film layer to form many ohmic contact layers, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described many ohmic contact layers, form the reflector; With
C) will formed structure annealing in step b).
Preferably, said method may further include after step a) and before forming described reflector described many ohmic contact layers is annealed.
Beneficial effect
As mentioned above, according to flip-chip nitride-based illuminating device of the present invention and preparation method thereof, following advantage is provided, for example improved ohmic contact characteristic with p-type coating, cause the encapsulation yields of wire bond efficient and light-emitting device to increase, because low contact resistivity and good I-E characteristic and can improve luminous efficiency and device lifetime.
Description of drawings
Above-mentioned purpose of the present invention and other purpose, characteristics and other advantage will be expressly understood more by the detailed description below in conjunction with accompanying drawing, wherein:
Fig. 1 is the sectional view of the light-emitting device of first execution mode according to the present invention;
Fig. 2 is the sectional view of the light-emitting device of second execution mode according to the present invention;
Fig. 3 is the sectional view of the light-emitting device of the 3rd execution mode according to the present invention;
Fig. 4 is the sectional view of the light-emitting device of the 4th execution mode according to the present invention;
Fig. 5 is the sectional view of the light-emitting device of the 5th execution mode according to the present invention;
Fig. 6 has shown the I-E characteristic result's that the light-emitting device that has omitted the reflector is measured figure; With
Fig. 7 has shown the figure to the I-E characteristic result who measures according to light-emitting device of the present invention.
Embodiment
Below, with reference to accompanying drawing, the flip-chip nitride-based illuminating device will be described in further detail according to the preferred embodiment of the present invention.
Fig. 1 has shown according to the present invention the sectional view of the flip-chip nitride-based illuminating device of first execution mode.
Referring now to Fig. 1, the flip-chip nitride-based illuminating device is formed by following structure, and described structure comprises stacked successively substrate 110, resilient coating 120, n-type coating 130, active layer 140, p-type coating 150, transparent conductive film layer 170 and the reflector 180 on it. Reference marker 190 and 200 is represented p-type electrode pad and n-type electrode pad respectively.
Be equivalent to ray structure from the part of substrate 110 to p-type coating 150, the transparent conductive film layer 170 that is stacked on the p-type coating 150 is equivalent to the ohmic contact structure.
Can omit resilient coating 120.
From each layer of resilient coating 120 to p-type coating 150 is to be selected from by general formula: Al
xIn
yGa
zN (0=x=1,0=y=1,0=z=1,0=x+y+z=1) the arbitrary compound in Dai Biao the III group-III nitride based compound is that the basis forms.N-type coating 130 and p-type coating 150 contain adding corresponding dopant wherein.
Thereby can dispose active layer 140 makes it have various known structure for example individual layer or mqw layer.
For example, when using gallium nitride-based compound semiconductor, resilient coating 120 is formed by GaN, for example Si, Ge, Se and Te form n-type coating 130 by add n-type dopant in GaN, active layer 140 is formed by InGaN/GaN MQW or AlGaN/GaN MQW, and p-type coating 150 for example Mg, Zn, Ca, Sr and Ba form by add p-type dopant in GaN.
Can between n-type coating 130 and n-type electrode pad 200, insert n-type ohmic contact layer (not shown), and various known structure for example have the stacked successively titanium (Ti) and the layer structure of aluminium (Al) etc. on it and can be used as n-type ohmic contact layer.
As p-type electrode pad 190, can use have stacked successively on it nickel (Ni)/gold (Au) or the layer structure of silver (Ag) gold/(Au).
Can form each layer by using electron beam evaporation plating device, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasmon deposition (PLD) or the hot evaporator sputter of dimorphism (dual-type) to wait.
Transparent conductive film layer 170 as the ohmic contact structure, be that diffuse by inhibitory reflex layer 180 forms to the material in the p-type coating 150, reflector 180 will form in ensuing process, therefore transparent conductive film layer 170 has served as the diffusion barrier of above-mentioned material, and high transmission rate and conductivity are provided simultaneously.
In addition, for transparent conductive film layer 170, use can increase the material of the efficient carrier concentration of p-type coating 150, and the material that preferably can react with other composition except that nitrogen-atoms in the compound of forming p-type coating 150.For example, contain in the situation of GaN based compound as main component,, use with gallium (Ga) reaction to have more active material than reacting with nitrogen for transparent conductive film layer 170 at light-emitting device.
In this case, for example, because transparent conductive film layer 170 has above-mentioned character, contain gallium nitride (GaN) as the p-type coating 150 of main component by its with transparent conductive film layer 170 between the surface of the p-type that is reflected at coating 150 on formation gallium room.At this, because p-type dopant has been served as in formed gallium room on p-type coating 150, the reaction between p-type coating 150 and the transparent conductive film layer 170 causes p-type coating 150 lip-deep efficient carrier concentration to increase.
In addition, for transparent conductive film layer 170, can use and to reduce gallium oxide (Ga
2O
3) material, described gallium oxide is a kind of natural oxide layer, it is retained on p-type coating 150 surfaces, and serving as the potential barrier that charge carrier flows on the interface between transparent conductive film layer 170 and the p-type coating 150, the material that therefore reduces gallium oxide has reduced the height and the width of Schottky barrier.
Can satisfy above-mentioned condition owing to be used for the material of transparent conductive film layer 170, it can use transparent conductive oxide (TCO) or electrically conducting transparent nitride (TCN).
As transparent conductive oxide, can use by at least a composition of indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La) and the material of oxygen combination of being selected from.
In addition, the electrically conducting transparent nitride comprise those have low sheet resistance and high transmission rate and contain the nitride of titanium (Ti) and nitrogen (N) at least.For example, can mention titanium nitride (TiN) or titanium oxynitrides (Ti-N-O).
In order to improve electrology characteristic, can in transparent conductive oxide or electrically conducting transparent nitride, add metallic element at least a periodic table as dopant.
Preferably, join the ratio of the dopant in transparent conductive oxide or the electrically conducting transparent nitride in the scope of 0.001-20wt%.Herein, wt% is meant the weight ratio between the material of adding.
By considering work function that purposes determined and sheet resistance, select the material of transparent conductive film layer 170 by light-emitting device.
In order to have suitable light transmittance and conductivity, the thickness of transparent conductive film layer 170 is preferably at 1nm-1, in the 000nm scope.
This transparent conductive film layer 170 is individual layer or by form two-layer or the more multi-layered sandwich construction of forming preferably.Fig. 5 has shown its example.
According to another aspect of the present invention, reflector 180 is to form by containing alloy or its solid solution of silver (Ag) as main component, and wherein contains at least a aluminium (Al), the silver oxide (Ag of being selected from that is less than 5wt% in the silver
2O), the element of zinc (Zn), titanium (Ti), rhodium (Rh), magnesium (Mg), palladium (Pd), ruthenium (Ru), platinum (Pt) and iridium (Ir).The basic alloy of this silver (Ag) has alleviated independent low tack and the thermal instability that occurs when using silver (Ag), therefore good contact and thermal endurance is provided and has kept high light reflectivity.
In having the light-emitting device of this structure, when using above-mentioned material to form transparent conductive film layer 170 and following it when suitable temperature is annealed in oxygen or air ambient, described layer 170 becomes the transparent conductive material of have high transmission rate (promptly transmittance surpasses 90% under the 400nm wavelength) and low sheet resistance value (less than 10 Ω/unit are), simultaneously described layer 170 minimizing gallium oxide (Ga
2O
3), gallium oxide is a kind of natural oxide layer, it is retained on p-type coating 150 surfaces, and serve as the potential barrier that charge carrier flows on the interface between transparent conductive film layer 170 and the p-type coating 150, therefore described layer 170 has reduced the height and the width of Schottky barrier, therefore caused the tunnel effect that helps forming ohmic contact, improved electrology characteristic, and had and approach 100% light transmittance.
In addition, when reflector 180 is when being formed by above-mentioned material, the diffuse that transparent conductive film layer 170 suppresses to form reflector enters p-type coating 150/ contact p-type coating 150.
Fig. 2 has shown according to the present invention the sectional view of the flip-chip nitride-based illuminating device of another execution mode.For with the figure that formerly shows in have the element of identical function, below identical numeral be meant identical element.
Referring now to Fig. 2, light-emitting device is formed by following structure, and described structure comprises stacked successively substrate 110, resilient coating 120, n-type coating 130, active layer 140, p-type coating 150, interface modification layer 160, transparent conductive film layer 170 and the reflector 180 on it.
As interface modification layer 160, its employed material has conductivity, and under less than 800 ℃ temperature when all gases environment is for example annealed in oxygen, nitrogen and the argon gas, can easily be decomposed into electrical-conductive nanometer phase oxide particle, or can form the transparent conductive film layer, and simultaneously described material reduces the natural oxide layer that is formed at p-type coating 150 tops thinly, i.e. gallium oxide (Ga
2O
3), perhaps change the gallium oxide layer into conductive oxide layer.℃
The material that satisfies above-mentioned condition that is used for interface modification layer 160 can be selected from following various materials:
1) arbitrary element that is selected from indium (In), tin (Sn), zinc (Zn), magnesium (Mg), silver (Ag), iridium (Ir), ruthenium (Ru), rhodium (Rh), platinum (Pt), nickel (Ni) and palladium (Pd), contain at least a alloy that is selected from above-mentioned element, and their solid solution.
1-1) material that is used for the interface modification layer preferably by the indium of above-mentioned element, add to have to add element and contain indium and formed as the alloy of main component and in their solid solution any one.Herein, join in the indium as the interpolation element that is used for the material of interface modification layer and comprise at least a element that is selected from tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).The interpolation element that is added not is special the qualification with respect to the ratio of indium, but preferred in the scope of 0.001-50wt%.
1-2) material that is used for the interface modification layer also preferably by the tin of above-mentioned element, add to have to add element and contain tin and formed as the alloy of main component and in their solid solution any one.Herein, join in the tin as the interpolation element that is used for the material of interface modification layer and comprise at least a element that is selected from indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).The interpolation element that is added is not special the qualification with respect to the ratio of tin, but preferred in the scope of 0.001-50wt%.
2) p-type transparent conductive oxide
For interface modification layer 160, the material of its use can provide 10
15-10
18/ cm
3The hole concentration of p-type transparent conductive oxide, described p-type transparent conductive oxide is formed at the top of p-type coating 150, can reduce the height and the width of the Schottky barrier that forms between p-type coating 150 and interface modification layer 160 like this.
2-1) as the example of p-type transparent conductive oxide, preferably by at least a formed binary of element or the ternary oxide that is selected from the II family element that comprises magnesium (Mg), zinc (Zn) and beryllium (Be).
2-2) as the example of p-type oxide, preferably any one is selected from Ag
2O, CuAlO
2, SrCu
2O
2, LaMnO
3, LaNiO
3And In
xO
1-xOxide.
Can in p-type oxide, suitably add p-type dopant, can control the concentration and the work function of p-type transparent conductive oxide like this, and reduce the height and the width of Schottky barrier simultaneously.
In addition, except above-mentioned p-type transparent conductive oxide, can also use following material, this material can the value of providing be 10
15-10
17/ cm
3Transparent conductive nano phase particle or the electron concentration of thin layer, described nanophase particle or thin layer are formed at p-type coating 150 tops, can be reduced between p-type coating 150 and the interface modification layer 160 height and the width of the Schottky barrier that forms like this.
2-3) in above-mentioned material, preferred indium base oxide, tin-based oxide or zinc-base oxide.
Under the situation of indium base oxide, preferably to main component indium oxide (In
2O
3) in adding can regulate indium oxide (In
2O
3) concentration and work function and simultaneously can reduce the height of Schottky barrier and the interpolation element of width.As adding element, can mention at least a composition that is selected from gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La).
Under the situation of tin-based oxide, preferably in tin oxide further adding can regulate the concentration of tin oxide and work function and can reduce the height of Schottky barrier and the interpolation element of width simultaneously.As adding element, can mention at least a composition that is selected from zinc (Zn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La).
Under zinc-base oxide ground situation, preferably in zinc oxide further adding can regulate oxidation zinc concentration and work function and can reduce the height of Schottky barrier and the interpolation element of width simultaneously.As the interpolation element that can add, can mention at least a composition that is selected from indium (In), tin (Sn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La).
In this respect, the interpolation element that is added not is special the qualification with respect to the ratio of above-mentioned main component, but preferred in the scope of 0.001-50wt%.Herein, wt% is meant the weight ratio between the material that is added.
The interface modification layer of being made up of above-mentioned material 160 preferably forms with the thickness of 0.1nm-100nm, under this thickness in when annealing, interface modification layer 160 can be decomposed into the electrical-conductive nanometer phase oxide at an easy rate or can form thin layer, and the quantum tunneling of charge carrier can be by described nanophase oxide or thin layer onset.
Transparent conductive oxide 170 is formed by above-mentioned material.
This structure in many ohmic contact layers and reflector 180 prevents from above under 200 ℃ the temperature superficial degradation taking place oxidation to be stable and still to have high reflectance, so it makes the high efficiency light-emitting device of realization become possibility.
Below, have according to the present invention the preparation method of the light-emitting device of first and second execution mode structure with reference to Fig. 1 and 2 explanation.
At first, stacked successively resilient coating 120, n-type coating 130, active layer 140 and p-type coating 150 on substrate 110.
Secondly, in order to ensure the formation space of n-type electrode pad 200, partially-etched zone from p-type coating 150 to n-type coating 130 is to form the MESA structure.
Then, when application drawing 1 structure, on p-type coating 150, only form transparent conductive film layer 170, when application drawing 2 structures, on p-type coating 150, form interface modification layer 160 and transparent conductive film layer 170 successively.
By using known deposition process, for example electron beam evaporation plating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasmon deposition (PLD) or the hot evaporator sputter of dimorphism etc. form transparent conductive film layer 170 or interface modification layer 160 and transparent conductive film layer 170.
Depositing temperature is 20 ℃-1500 ℃, and the interior pressure of evaporator is an atmospheric pressure to 10
-12Holder.
After forming transparent conductive film layer 170 or interface modification layer 160 and transparent conductive film layer 170 on the p-type coating 150, resulting structures preferably containing the gaseous environment of oxygen, is for example annealed in oxygen atmosphere or the air.
Under 100 ℃-800 ℃ temperature, in reactor, anneal 10 seconds to 3 hour.
After this, on transparent conductive film layer 170, form reflector 180.By above-mentioned known deposition methods deposition of reflective layer 180.
180 form the back in order to improve its tack and thermal stability in the reflector, 10 seconds to 3 hour of in reactor ray structure being annealed in vacuum, nitrogen or argon gas environment under 100 ℃-800 ℃ temperature.
Experiment showed, the degeneration that reflector 180 annealing in the environment except that vacuum, nitrogen and argon gas can be caused its characteristic.
Fig. 3 has shown according to the present invention the sectional view of the flip-chip nitride-based illuminating device of the 3rd execution mode.For with the figure of previous demonstration in have the element of identical function, below identical numeral be meant identical element.
Referring now to Fig. 3, the flip-chip light emitting device is formed by following structure, described structure comprise stacked successively on it substrate 110, resilient coating 120, n-type coating 130, active layer 140, p-type coating 150, interface modification layer 160, insert metal level 165, transparent conductive film layer 170 and reflector 180.
Herein, interface modification layer 160, insertion metal level 165 and transparent conductive film layer 170 are corresponding to many ohmic contact layers.
Inserting metal level 165 is formed between interface modification layer 160 and the transparent conductive film layer 170.
Insert metal level 165 preferably by being converted into transparent conductive oxide easily when the annealing and can regulating the electricity of interface modification layer 160 or transparent conductive film layer 170 simultaneously or the metal of optical characteristics is formed, described transparent conductive film layer 170 is formed at the top of interface improving layer 160 in step subsequently.
Preferably, inserting metal level 165 is formed by at least a composition that is selected from zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), ruthenium (Ru) and molybdenum (Mo).
Certainly, inserting metal level 165 can form by a plurality of layers that enumerate material more than using.
Preferably, insert the thickness formation of metal level 165 with 1nm-100nm.
Below, explanation has the preparation method of the light-emitting device of the 3rd execution mode structure according to the present invention with reference to Fig. 3.
At first, on substrate 110, deposit resilient coating 120, n-type coating 130, active layer 140 and p-type coating 150 successively, form ray structure thus.
Secondly, in order to ensure the formation space of n-type electrode pad 200, partially-etched zone from p-type coating 150 to n-type coating 130 is to form the MESA structure.
Then, form many ohmic contact layers, described many ohmic contact layers comprise interface modification layer 160, insertion metal level 165 and the transparent conductive film layer 170 that is stacked in successively on the p-type coating 150.
By using known deposition process, for example electron beam evaporation plating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasmon deposition (PLD) or the hot evaporator sputter of dimorphism etc. form interface modification layer 160, insert metal level 165 and transparent conductive film layer 170.
In addition, the depositing temperature that is used for forming successively each layer from interface modification layer 160 to transparent conductive film layer 170 is 20 ℃-1500 ℃, and the interior pressure of evaporator is an atmospheric pressure to 10
-12Holder.
Preferably, behind each layer that forms from interface modification layer 160 to transparent conductive film layer 170, then carry out annealing process.
In reactor, in vacuum or suitable gaseous environment, annealing 10 seconds to 3 hour under 100 ℃-800 ℃ the temperature.
Gas as introducing when annealing in the reactor can use at least a gas that is selected from nitrogen, argon gas, helium, oxygen, hydrogen and air.
After the annealing, use previously described material on transparent conductive film layer 170, to form reflector 180.
Come deposition of reflective layer 180 by above-mentioned deposition process.
180 form the back in order to improve its tack and thermal stability in the reflector, by the method for above explanation ray structure are annealed.
Perhaps, on p-type coating 150, deposit successively from interface modification layer 160 to the reflector each layer of 180, then can only need once anneal to ray structure.
Experimental results show that, when annealing for the first time up to carrying out after each layer formation of transparent conductive film layer 170 and annealing for the second time when after reflector 180 forms, carrying out, the light transmittance of many ohmic contact layers further is enhanced and the reflectivity in reflector 180 also is enhanced.
Below, explanation has the preparation method of the light-emitting device of the 4th and the 5th execution mode structure according to the present invention with reference to Figure 4 and 5.
Fig. 4 has shown according to the present invention the sectional view of the flip-chip light emitting device of the 4th execution mode.Referring now to Fig. 4, the flip-chip light emitting device is formed by following structure, and described structure comprises that stacked successively substrate 210, resilient coating 220, n-type coating 230, active layer 240, p-type coating 250, many ohmic contact layers 260 and the reflector 270 on it forms.Reference marker 280 and 290 is represented p-type electrode pad and n-type electrode pad respectively.
Since the composition of above-mentioned flip-chip light emitting device except that many ohmic contact layers 260 basically with first execution mode in identical, so omitted detailed description to them.Below, will describe many ohmic contact layers 260.
Many ohmic contact layers 260 are to form by repeating stacked interface modification layer 260a/ transparent conductive film layer 260b as stacked unit.Fig. 4 has shown the example of this repetition stacked structure.
Referring now to Fig. 4, many ohmic contact layers 260 are that following structure forms, and this structure comprises the stacked successively first interface modification layer 260a/, the first transparent conductive film layer 260b/ second contact surface modified layer 260c/, the second transparent conductive film layer 260d on it.
The first interface modification layer 260a and the first transparent conductive film layer 260b can be according to first forms interface modification layer 160 and transparent conductive film layer 170 described method to the 3rd execution mode in the present invention.
When annealing, provide oxygen by the first transparent conductive film layer 260b or by the second transparent conductive film layer 260d that will in later step, form to second contact surface modified layer 260c, and form the transparent conductive oxide film layer, and further increased simultaneously, the carrier concentration of the first and second transparent conductive film layer 260b and 260d.
In order to reduce sheet resistance, the material that is used for second contact surface modified layer 260c can be identical or different with the composition of the first interface modification layer 260a.
Preferably, the first and second interface modification layer 260a and 260c form with the thickness of 0.1nm-100nm respectively, and these layers can easily decompose and be oxidized to electrical-conductive nanometer phase particle when annealing in this thickness range.
In addition, the first transparent conductive film layer 260b and the second transparent conductive film layer 260d also can be formed by above-mentioned material, but in order to reduce sheet resistance, what the composition of the first transparent conductive film layer 260b can be with the second transparent conductive film layer 260d is identical or different.
As mentioned above, the first transparent conductive film layer 260b and the second transparent conductive film layer 260d also form with the thickness of 1nm-1000nm independently.
Simultaneously, Fig. 5 has shown the light-emitting device of having used another many ohmic contact layers.For with the figure of previous demonstration in have the element of identical function, below identical numeral be meant identical element.
Referring now to Fig. 5, many ohmic contact layers 260 are formed by the structure that comprises the stacked successively first interface modification layer 260a/, the first transparent conductive film layer 260b/, the second transparent conductive film layer 260d on it.
Herein, stacked repetitive is the first interface modification layer 260a/, the first transparent conductive film layer 260b/, the second transparent conductive film layer 260d.
In having many ohmic contact layers 260 of this structure, can use foregoing material and method to form the first interface modification layer 260a/, the first transparent conductive film layer 260b/, the second transparent conductive film layer 260d.
Below, explanation has the preparation method of the light-emitting device of the 4th and the 5th execution mode structure according to the present invention with reference to Figure 4 and 5.
At first, on substrate 210, deposit resilient coating 220, n-type coating 230, active layer 240 and p-type coating 250 successively, form ray structure thus.
Secondly, for guaranteeing the formation space of n-type electrode pad 290, partially-etched each layer from p-type coating 250 to n-type coating 230 is with formation MESA structure.
Then, on the p-of ray structure type coating 250, form many ohmic contact layers 260.
Each layer of forming many ohmic contact layers 260 can lead to the known deposition process of use, and for example electron beam evaporation plating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasmon deposition (PLD), the hot evaporator sputter of dimorphism form.
In addition, the depositing temperature that is used for forming successively each layer of many ohmic contact layers 260 is 20 ℃-1500 ℃, and the interior pressure of evaporator is an atmospheric pressure to 10
-12Holder.
Preferably, after forming, many ohmic contact layers 260 carry out annealing process.
In reactor, in vacuum or suitable gaseous environment, annealing 10 seconds to 3 hour under 100 ℃-800 ℃ the temperature.
Gas as introduce reactor when annealing can use at least a gas that is selected from nitrogen, argon gas, helium, oxygen, hydrogen and air.
After the annealing, use the material of before having enumerated, on many ohmic contact layers 260, form reflector 270.
By previously mentioned deposition reflector 270.
270 form the back in order to improve its tack and thermal stability in the reflector, by previously described method ray structure are annealed.
Perhaps, after forming many ohmic contact layers 260 and reflector 270 successively on the p-type coating 250, can only once anneal to the gained ray structure.
Experiment showed, when annealing for the first time and after many ohmic contact layers 260 form, carry out and annealing for the second time when after reflector 270 forms, carrying out that the light transmittance of many ohmic contact layers 260 further increases, and the reflectivity in reflector 270 increases.
Fig. 6 and 7 has shown the experimental result of measuring the light-emitting device characteristic, and described light-emitting device is according to method preparation of the present invention described above.
Fig. 6 is the figure that has shown the I-E characteristic result that following light-emitting device is measured, and described light-emitting device is by at the stacked successively Ag/ITO in p-type coating top, annealing and preparation in air ambient under 330 ℃-530 ℃ temperature then.
Fig. 7 is the figure that has shown the I-E characteristic result that following light-emitting device is measured, described light-emitting device is by at the stacked successively Ag/ITO in p-type coating top, under 330 ℃-530 ℃ temperature, in air ambient, anneal then, and then anneal in a vacuum under 330 ℃ of temperature and prepare in the deposition of aluminum reflector.
By comparison diagram 6 and 7 as can be seen, by further forming the then ray structure for preparing of annealing of reflector with aluminium, demonstrate the current-voltage drive characteristic of having improved.
Though the purpose of property discloses preferred implementation of the present invention presented for purpose of illustration, those skilled in the art can understand, and can carry out various improvement, dose and replace and do not deviate from as disclosed scope and spirit of the present invention in the appended claims.
Claims (37)
1. flip-chip nitride-based illuminating device, this light-emitting device has active layer between n-type coating and p-type coating, and described light-emitting device comprises:
Formed reflector on described p-type coating; With
At least one is inserted in the transparent conductive film layer between described p-type coating and the described reflector, and this transparent conductive film layer is made up of transparent conductive material, and described transparent conductive material can suppress to constitute the diffusion of the material in described reflector.
2. light-emitting device as claimed in claim 1, wherein, described transparent conductive film layer is formed by in transparent conductive oxide and the electrically conducting transparent nitride any.
3. light-emitting device as claimed in claim 2, wherein, described transparent conductive oxide contains at least a composition and the oxygen that is selected from indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).
4. light-emitting device as claimed in claim 2, wherein, described electrically conducting transparent nitride contains titanium (Ti) and nitrogen (N) at least.
5. light-emitting device as claimed in claim 4, wherein, described electrically conducting transparent nitride is titanium nitride (TiN) or titanium oxynitrides (Ti-N-O).
6. light-emitting device as claimed in claim 1, wherein, described transparent conductive film layer forms with the thickness of 1nm-1000nm.
7. light-emitting device as claimed in claim 1, wherein, described reflector is by being selected from silver (Ag), silver oxide (Ag
2O), at least a element of aluminium (Al), zinc (Zn), titanium (Ti), rhodium (Rh), magnesium (Mg), palladium (Pd), ruthenium (Ru), platinum (Pt) and iridium (Ir), the alloy that contains at least a material that is selected from above-mentioned element or their solid solution form.
8. light-emitting device as claimed in claim 1, wherein, described reflector forms with the thickness of 1nm-1000nm.
9. light-emitting device as claimed in claim 1, it further comprises:
The interface modification layer that between described p-type coating and transparent conductive film layer, forms.
10. light-emitting device as claimed in claim 9, wherein, described interface modification layer is formed by the arbitrary element that is selected from indium (In), tin (Sn), zinc (Zn), magnesium (Mg), silver (Ag), iridium (Ir), ruthenium (Ru), rhodium (Rh), platinum (Pt), nickel (Ni) and palladium (Pd), the alloy that contains at least a element that is selected from above-mentioned element or their solid solution.
11. light-emitting device as claimed in claim 9, wherein, described interface modification layer by indium, add the element of interpolation to be arranged and contain indium and form as the alloy of main component or their solid solution.
12. light-emitting device as claimed in claim 11, wherein, join in the indium and to comprise as the interpolation element that is used for the material of interface modification layer and to be selected from least a of tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).
13. light-emitting device as claimed in claim 12, wherein, the interpolation element that is added with respect to the ratio of indium in the scope of 0.001-50wt%.
14. light-emitting device as claimed in claim 9, wherein, described interface modification layer by tin, add the element of interpolation to be arranged and contain tin and form as the alloy of main component or their solid solution.
15. light-emitting device as claimed in claim 14, wherein, join in the tin and to comprise as the interpolation element that is used for the material of interface modification layer and to be selected from least a of indium (In), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt) and lanthanum (La).
16. light-emitting device as claimed in claim 15, wherein, the interpolation element that is added with respect to the ratio of tin in the scope of 0.001-50wt%.
17. light-emitting device as claimed in claim 9, wherein, described interface modification layer is formed by p-type transparent conductive oxide.
18. light-emitting device as claimed in claim 9, wherein, described interface modification layer contains formed binary of element or the ternary oxide that is selected from the II family element that comprises magnesium (Mg), zinc (Zn) and beryllium (Be) by at least a.
19. light-emitting device as claimed in claim 9, wherein, described interface modification layer contains any one and is selected from Ag
2O, CuAlO
2, SrCu
2O
2, LaMnO
3, LaNiO
3And In
xO
1-xOxide.
20. as claim 18 or 19 described light-emitting devices, wherein, described interface modification layer forms by further add p-type dopant in described oxide.
21. light-emitting device as claimed in claim 9, wherein, described interface modification layer is indium base oxide, tin-based oxide or zinc-base oxide.
22. light-emitting device as claimed in claim 21, wherein, described indium base oxide contains indium oxide (In
2O
3) as main component and at least a composition that is selected from gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La) as adding element.
23. light-emitting device as claimed in claim 21, wherein, described tin-based oxide contains tin oxide (SnO
2) as main component and at least a composition that is selected from zinc (Zn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La) as adding element.
24. light-emitting device as claimed in claim 21, wherein, described zinc-base oxide contain zinc oxide (ZnO) as main component and at least a composition that is selected from indium (In), tin (Sn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La) as adding element.
25. as each described light-emitting device of claim 22-24, wherein, the interpolation element that is added with respect to the ratio of the main component of described interface modification layer in the scope of 0.001-50wt%.
26. light-emitting device as claimed in claim 9, wherein, described interface modification layer forms with the thickness of 0.1nm-100nm.
27. light-emitting device as claimed in claim 9, it further comprises:
Formed insertion metal level between described interface modification layer and described transparent conductive film layer.
28. light-emitting device as claimed in claim 27, wherein, described insertion metal level is formed by at least a composition that is selected from zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), ruthenium (Ru) and molybdenum (Mo).
29. light-emitting device as claimed in claim 27, wherein, described insertion metal level forms with the thickness of 1nm-100nm.
30. a flip-chip nitride-based illuminating device, this light-emitting device has active layer between n-type coating and p-type coating, and described light-emitting device comprises:
Many ohmic contact layers and the reflector of being made up of reflecting material on described many ohmic contact layers, described many ohmic contact layers comprise interface modification layer and at least one transparent conductive film layer, and the two is stacked on the described p-type coating as stacked repetitive.
31. the preparation method of a flip-chip nitride-based illuminating device, described light-emitting device has active layer between n-type coating and p-type coating, and described preparation method comprises:
A) form at least one transparent conductive film layer on the p-of ray structure type coating, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described transparent conductive film layer, form the reflector; With
C) with the resulting structure annealing that comprises described reflector.
32. method as claimed in claim 31, this method further comprises:
After step a) and the annealing steps before forming described reflector.
33. the preparation method of a flip-chip nitride-based illuminating device, described light-emitting device has active layer between n-type coating and p-type coating, and described preparation method comprises:
A) form the interface modification layer on the p-of ray structure type coating, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described interface modification layer, form at least one transparent conductive film layer of forming by transparent conductive material;
C) on described transparent conductive film layer, form the reflector; With
D) with formed structure annealing in the step c).
34. method as claimed in claim 33, this method further comprises:
After step b) and the annealing steps before forming described reflector.
35. method as claimed in claim 33, this method further comprises:
Before forming described transparent conductive film layer, on described interface modification layer, form and insert metal level.
36. the preparation method of a flip-chip nitride-based illuminating device, described light-emitting device has active layer between n-type coating and p-type coating, and described preparation method comprises:
A) by on the p-of ray structure type coating stacked as stacked repetitive the interface modification layer and at least one transparent conductive film layer to form many ohmic contact layers, described ray structure comprises n-type coating, active layer and the p-type coating that is stacked in successively on the substrate;
B) on described many ohmic contact layers, form the reflector; With
C) will formed structure annealing in step b).
37. method as claimed in claim 36, this method further comprises:
After step a) and before forming described reflector, described many ohmic contact layers are annealed.
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| Application Number | Priority Date | Filing Date | Title |
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| KR20040054141A KR100638862B1 (en) | 2004-07-12 | 2004-07-12 | flip-chip light emitting diodes and method of manufacturing thereof |
| KR10-2004-0054141 | 2004-07-12 | ||
| KR10-2004-0057582 | 2004-07-23 | ||
| KR20040057571A KR100574104B1 (en) | 2004-07-23 | 2004-07-23 | Flip-chip light emitting device and method of manufacturing thereof |
| KR10-2004-0057571 | 2004-07-23 | ||
| KR10-2004-0057576 | 2004-07-23 | ||
| KR20040057576A KR100611640B1 (en) | 2004-07-23 | 2004-07-23 | Flip-chip light emitting device and method of manufacturing thereof |
| KR20040057591A KR100574102B1 (en) | 2004-07-23 | 2004-07-23 | Flip-chip light emitting device and method of manufacturing thereof |
| KR10-2004-0057591 | 2004-07-23 | ||
| KR20040057582A KR100574103B1 (en) | 2004-07-23 | 2004-07-23 | Flip-chip light emitting device and method of manufacturing thereof |
| PCT/KR2005/002245 WO2006006822A1 (en) | 2004-07-12 | 2005-07-12 | Flip-chip light emitting diodes and method of manufacturing thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811621A (en) * | 2012-11-02 | 2014-05-21 | 晶元光电股份有限公司 | Light-emitting element and producing method thereof |
| CN105742449A (en) * | 2016-04-01 | 2016-07-06 | 清华大学 | Preparation method for electrode of light emitting diode |
| CN108538982A (en) * | 2018-06-21 | 2018-09-14 | 河北工业大学 | A kind of chip epitaxial structure of low-resistance LED and preparation method thereof |
| CN112420888A (en) * | 2021-01-21 | 2021-02-26 | 华灿光电（浙江）有限公司 | Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100833489B1 (en) * | 2006-02-21 | 2008-05-29 | 한국전자통신연구원 | Transparent contact electrode for Si nanocrystal light-emitting diodes, and method of fabricating |
| KR102162437B1 (en) * | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package including the device |
Family Cites Families (6)
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| JPS60130822A (en) | 1983-12-19 | 1985-07-12 | Semiconductor Energy Lab Co Ltd | Manufacture of light emitting semiconductor device |
| JP3130292B2 (en) * | 1997-10-14 | 2001-01-31 | 松下電子工業株式会社 | Semiconductor light emitting device and method of manufacturing the same |
| JP3739951B2 (en) * | 1998-11-25 | 2006-01-25 | 東芝電子エンジニアリング株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| TW465123B (en) * | 2000-02-02 | 2001-11-21 | Ind Tech Res Inst | High power white light LED |
| JP4065655B2 (en) | 2000-11-09 | 2008-03-26 | 昭和電工株式会社 | Flip-chip type semiconductor light-emitting device, manufacturing method thereof, light-emitting diode lamp, display device, and electrode for flip-chip type semiconductor light-emitting device |
| KR100647279B1 (en) * | 2003-11-14 | 2006-11-17 | 삼성전자주식회사 | light emitting device and method of manufacturing thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811621A (en) * | 2012-11-02 | 2014-05-21 | 晶元光电股份有限公司 | Light-emitting element and producing method thereof |
| CN103811621B (en) * | 2012-11-02 | 2019-03-19 | 晶元光电股份有限公司 | Light-emitting component and its manufacturing method |
| CN110010739A (en) * | 2012-11-02 | 2019-07-12 | 晶元光电股份有限公司 | Light-emitting component and its manufacturing method |
| CN110010739B (en) * | 2012-11-02 | 2020-08-18 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN105742449A (en) * | 2016-04-01 | 2016-07-06 | 清华大学 | Preparation method for electrode of light emitting diode |
| CN108538982A (en) * | 2018-06-21 | 2018-09-14 | 河北工业大学 | A kind of chip epitaxial structure of low-resistance LED and preparation method thereof |
| CN112420888A (en) * | 2021-01-21 | 2021-02-26 | 华灿光电（浙江）有限公司 | Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof |
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| CN101278409B (en) | 2010-06-30 |
| KR20060005244A (en) | 2006-01-17 |
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