CN101330051A - Method for obtaining LCOS device using argentum and generated structure thereof - Google Patents
Method for obtaining LCOS device using argentum and generated structure thereof Download PDFInfo
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- CN101330051A CN101330051A CNA200710042342XA CN200710042342A CN101330051A CN 101330051 A CN101330051 A CN 101330051A CN A200710042342X A CNA200710042342X A CN A200710042342XA CN 200710042342 A CN200710042342 A CN 200710042342A CN 101330051 A CN101330051 A CN 101330051A
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Abstract
The invention relates to a method for manufacturing an LCOS device, which comprises the following steps: a semiconducting matrix is provided and a plurality of MOS transistor devices are formed; a plurality of MOS transistor devices are formed on a part of the semiconducting matrix. The method of the invention comprises the formation of a first dielectric layer covering a plurality of MOS transistor devices and the formation of a first metal layer covering the first dielectric layer. The method of the invention also comprises the formation of a second dielectric layer covering the first metal layer and the formation of a plurality of pixel blocks which are substantially made from an argentiferous material covering the second dielectric layer. In a preferred embodiment, the argentiferous material has extremely high reflectivity against 450-nanometer and even larger wavelength.
Description
Technical field
The present invention relates to integrated circuit and be used for the processing that electronic device is made.More specifically, the invention provides liquid crystal over silicon (Liquid Crystal on Silicon, LCOS) method of the electroplax structure of device that a kind of manufacturing is used for display.But will be appreciated that the present invention has broad more range of application.
Background technology
In these years electronic display technology is developed rapidly.In the past, in the television set of routine, the cathode ray tube technologies that is commonly referred to CRT outputed to the pixel element of selecting on the glass screen.These television sets are exported the black and white moving image at first.Very fast color television set has replaced great majority (even not being whole) black and white television set.Although extremely successful, CRT is huge often, is difficult to be prepared into bigger, and has other limitation.
Soon CRT is just replaced by liquid crystal panel displays at least in part.These liquid crystal panel displays are commonly referred to LCD, and the array of transistor elements that liquid crystal material and colour filter are coupled in its use is exported colored moving image.Many computer terminals and littler display device often rely on LCD output video, text and other visual signatures.Regrettably, liquid crystal panel often output is very low, and is difficult to expand to bigger size.These LCD are unaccommodated often for frequent bigger displays that needs such as television sets.
Therefore, developed projection display unit.Inter alia, these projection display units comprise corresponding LCD, and its scioptics will output to bigger display from the light of the pixel element of selecting, to produce moving image, text and other visual patterns.Another kind of technology is known as " digital light processing ", and (Digital Light Processing, DLP), " digital light processing " is the trade name from the Texas Instruments Incorporated (TI) of U.S. Texas.DLP often is called as the use of " micro mirror ".DLP relies on a hundreds of thousands small mirror, and these mirrors are arranged in 800 row, 600 mirrors of every row.Each mirror is hinged.Actuator is connected to each hinge.Actuator has electrostatic energy usually, and it can be with high frequency each mirror that tilts.The mirror that moves can be modulated light, and described light can the scioptics transmission, is presented on the screen then.Although DLP achieves success, it often is difficult to make and has a problem such as yield poorly.
Also have another kind of technology to be known as LCOS.LCOS uses the liquid crystal that is applied to mirror substrate.Along with liquid crystal " unlatching " or " closure ", reflect or blocking light, thereby light is modulated the image that is used to show with generation.Compare with the transmission LCD of routine, reflection LCOS display makes more light by optics, and therefore higher brightness is provided.In most cases, have at least three LCOS chips, each is corresponding to the light in the red, green and blue passage.Yet LCOS has many limitations.As just example, LCOS often is difficult to make.In addition, LCOS needs at least three chips, and this makes projector huge and heavy, and causes expensive.
Conventional LCOS also uses the reflective film of aluminum as electrode.Making the level and smooth conventional method of aluminium/oxide is chemical-mechanical planarization, is commonly referred to the A1CMP method.Yet the CMP method causes many undesirable problems, such as aluminium depression in the surface, little cut and oxidation.These and other limitation has below been described in more detail.
From the above, the improving technology that needs processing apparatus.
Summary of the invention
According to the present invention, provide the technology that the integrated circuit that is used for the electronic device manufacturing is handled.More specifically, the invention provides liquid crystal over silicon (LiquidCrystal on Silicon, LCOS) method of the electrode structure of device that a kind of manufacturing is used for display.But will be appreciated that the present invention has broad more range of application.
In one embodiment, the invention provides the LCOS device is made in a kind of utilization to the chemico-mechanical polishing of mirror structure method.Described method comprises provides semiconductor chip, for example silicon wafer.Described method comprises the silver metal layer that forms first dielectric layer on the covering semiconductor chip and form dielectric layer.In a preferred embodiment, the upper surface of silver metal layer has with root mean square (root mean squared, RMS) predetermined roughness of Ce Lianging.Described method patterning silver metal layer is to expose the part of dielectric layer.The bounded that expose portion forms is around one of a plurality of patterns of patterning silver metal layer.In a preferred embodiment, one of a plurality of patterns are corresponding to a pixel element.Described method comprises second dielectric layer that forms the expose portion that covers silver metal layer and described dielectric layer.Described method is removed the part of described second dielectric layer, near in the upper surface of described patterning silver metal layer zone, and utilize glossing to handle the zone of overlay pattern silver metal layer, be reduced to less than 5 dusts with surface roughness, so that on the upper surface of patterning silver metal layer, form minute surface the upper surface of patterning silver metal layer.In a preferred embodiment, described minute surface is corresponding to described pixel element.
In the specific embodiment of an alternative, the invention provides a kind of method of the LCOS of manufacturing device.Described method comprises provides semiconductor chip, and forms a plurality of MOS transistor devices, and described a plurality of MOS transistor devices are formed on the part of semiconductor chip.Described method comprises first dielectric layer that forms a plurality of transistor devices of covering and forms the first metal layer that covers first dielectric layer.Described method comprises second dielectric layer that forms the covering the first metal layer and forms basically by a plurality of pixel regions that ag material is made that contain that cover second dielectric layer.In a preferred embodiment, the described ag material that contains has very high reflectivity for 450 nanometers and bigger wavelength.
In the specific embodiment of another alternative, the invention provides a kind of LCOS device.Described device has semiconductor chip, for example silicon wafer.First dielectric layer that described device has a plurality of MOS transistor devices on the part that is formed on semiconductor chip and covers a plurality of transistor devices.Described device comprises the first metal layer that covers first dielectric layer and second dielectric layer that covers the first metal layer.Described device has basically by a plurality of pixel regions that ag material is made that contain that cover second dielectric layer.
Many advantages of routine techniques have been realized being better than by the present invention.For example, technology of the present invention provides and has used the cheap of the method that relies on routine techniques.Among some embodiment, the device yield that described method provides the higher number of die with every wafer to represent.In addition, described method provides the method with the common process technical compatibility, and need not conventional equipment and method are carried out the substance change.Preferably, the present invention provides the mirror or the electrode structure of improvement for the LCOS device that is used for display.These electrode structures use high reflective ag material, and the reflective ag material of described height provides improved mirror.In a preferred embodiment, it is about 5% that reflectivity increases, with routine to contain that aluminum technology compares be bigger.According to this embodiment, can realize one or more in these advantages.To be explained in more detail these and other advantage following in this manual and more specifically.
Can understand various other purpose of the present invention, feature and advantage more completely with reference to the accompanying drawing that describes in detail with subsequently.
Description of drawings
Fig. 1 is the simplification section diagrammatic sketch of LCOS device according to an embodiment of the invention; And
Fig. 2 to 7 is explanation simplification section diagrammatic sketch that are used to make the method for LCOS device according to an embodiment of the invention.
Embodiment
According to the present invention, provide the technology that the integrated circuit that is used for the electronic device manufacturing is handled.More specifically, the invention provides liquid crystal over silicon (LiquidCrystal on Silicon, LCOS) method of the electrode structure of device that a kind of manufacturing is used for display.But will be appreciated that the present invention has broad more range of application.
Fig. 1 is the simplification section diagrammatic sketch of LCOS device 100 according to an embodiment of the invention.This figure only is an example, should exceedingly not limit the scope of claim among the present invention this its.Those skilled in the art will recognize that many variations, alternative and change.As shown in the figure, LCOS device 100 has semiconductor chip 101, for example, and silicon wafer.Form MOS device layer 103, it covers semiconductor chip.Preferably, the MOS device layer has a plurality of MOS devices.Each MOS device has contact zone 107 that is used for electrode and the contact zone 105 that is used for voltage.Form the interlevel dielectric layer 111 of the planarization that covers the MOS device layer.The LCOS device also has: a plurality of depressed areas in the part of interlevel dielectric layer; And metal level, in order to fill each depressed area to form a plurality of electrode districts 113 respectively corresponding to each depressed area.In a preferred embodiment, metal level is to contain ag material and/or silver layer.Each electrode district is coupled at least one MOS device in the middle of a plurality of MOS devices respectively by interconnection structure 109, and described interconnection structure 109 can be connector or other analog structures.Form protective layer, described protective layer covers each surface region in a plurality of electrode districts to protect described surface region.Polishing mirror (mirror finish) 116 is on each surface region.Preferably, the polishing mirror does not have the sagging and cut that CMP (Chemical Mechanical Polishing) process causes basically.More preferably, CMP (Chemical Mechanical Polishing) process is the contact glossing under the specified conditions.Each electrode can have the thickness of scope from about 2000 dusts to about 4000 dusts, and can be other yardsticks.Each electrode is illustrated in a pixel element of the pixel element array that is used for the LCOS device.The liquid crystal film 115 of coated electrode also is shown.The LCOS device also has transparent electrode layer (for example tin indium oxide) 117 and covers the glass plate 119 to encapsulate described sandwich construction on it.The details of the working method of LCOS device can be from whole specification and is found hereinafter more specifically.
In order to make the work of LCOS device, light 120 by transparency electrode, and arrives liquid crystal film laterally by glass cover.When electrode was not biased, liquid crystal film was in scram position basically, and it does not allow light to pass through it.More properly, light is blocked, not from the direct reflection of electrode.When electrode was biased by the MOS device, liquid crystal film was in on-position, and it allows light by 121.Light is from the electrode surface reflection and by liquid crystal film, and described liquid crystal film is in on-position.Preferably, minute surface does not have defective basically.Therefore, according to some embodiment, at least 97% incident light goes out 121 from the LCOS device.The details of the manufacture of LCOS device can be in whole specification and is found hereinafter more specifically.
The method of making the electrode structure that is used for the LCOS device according to an embodiment of the invention can be summarized as follows:
1. substrate is provided;
2. form the transistor unit layer of covering substrate;
3. form first interlevel dielectric layer of covering transistor element layer;
4. form the barrier metal layer that covers first interlevel dielectric layer;
5. form the silver layer that covers the barrier metal layer on first interlevel dielectric layer;
6. shelter silver layer;
7. the patterning silver layer is to form a plurality of electrode districts, and each electrode district is corresponding to a pixel element;
8. use the exposed region of first interlevel dielectric layer to form the frontier district that centers on each pixel element;
9. form second dielectric layer, described second dielectric layer covers the exposed region of each pixel element and first interlevel dielectric layer;
10. on second dielectric layer, implement chemical-mechanical planarization technology, to reduce second dielectric layer thickness;
11. continue less second dielectric layer thickness up to the surface region that exposes each electrode district;
12. alternatively, use chemical-mechanical planarization technology to contact the surface region of each electrode district of polishing, be reduced to second predeterminated level from first predeterminated level with surface roughness with surface region; And
13. form the protective layer of overlay pattern silver layer;
14. provide the liquid crystal layer of protective mulch, the transparent electrode layer of covering liquid crystal layer and the glassy layer of covering transparent electrode layer, to form the LCOS device; And
15. if desired, carry out other steps.
The above-mentioned steps sequence provides method according to an embodiment of the invention.As shown, this method is used the combination of each step, and described step comprises that use contains the scheme that ag material is formed for the electrode structure of LCOS device.Under the situation that does not deviate from the scope of claim among the present invention, also can provide has wherein increased step, removed one or more steps or other alternative schemes of one or more steps is provided with different sequences.The further details of this method can be in whole specification and is found hereinafter more specifically.
The method of Fig. 2 to 7 explanation formation according to an embodiment of the invention LCOS device.These diagrammatic sketch only are examples, and it should excessively not limit the scope of claim among the present invention.Those skilled in the art will recognize that many variations, alternative and change.With reference to figure 2, described method is from providing for example silicon wafer of semiconductor chip 201.Described method comprises the transistor layer that forms covering substrate.Preferably, transistor layer has a plurality of MOS devices, and each MOS device comprises first contact zone and second contact zone.Described method also comprises the interlevel dielectric layer 203 that forms the covering transistor layer.Described dielectric layer can be made by BPSG, FSG, oxide and combination in any thereof etc.Preferably, use chemical vapor deposition method to form dielectric layer.Described method then the planarization interlevel dielectric layer to form the surface region of planarization.Alternatively, dielectric layer is flattened.
Refer again to Fig. 2, described method comprises formation barrier metal layer 205, and described barrier metal layer 205 covers the planarized surface district of planarization interlevel dielectric layers.Barrier metal layer can be made by any suitable material such as titanium nitride, titanium/titanium nitride etc.Described method comprises the argentiferous metal level 207 that forms the covering barrier metal layer.Use the combination in any of chemical vapour deposition (CVD) or plating or these technology to wait sputter or deposit described argentiferous metal level.In a preferred embodiment, use silver-colored source and electrode to dispose the electrosilvering material.Plating can keep in the low temperature execution and in about room temperature (for example 12-29 ℃) Celsius temperature, can keep in lower temperature in a preferred embodiment.
Metal level has the surface that is essentially the plane, but can have some defective such as rough surface and other defectives, and these defectives can utilize glossing to remove.Each electrode district is coupled to each the MOS device in the middle of a plurality of MOS devices respectively.
With reference to figure 3, described method comprises the upper surface of sheltering the silver metal layer.Mask is patterned to expose some zone of silver metal layer.Described method patterning silver metal layer is to form a plurality of electrode districts 305.Each electrode district is corresponding to a pixel element.The exposed region 303 of described method use interlevel dielectric layer forms the frontier district 301 around each pixel element.The width of each pixel element is that about 5 μ m arrive about 15 μ m, and thickness about 500
To 5000
Certainly, those skilled in the art will recognize that other variation, modification and alternative.
According to a specific embodiment, described method forms second dielectric layer 401, and it covers the exposed region of each pixel element and first interlevel dielectric layer, shown in the sketch of Fig. 4.The second electric dielectric can be any suitable material.That is, dielectric layer can be made by BPSG, FSG, oxide and combination in any thereof etc.Preferably, use chemical vapor deposition method to form dielectric layer.
Described method is carried out chemical-mechanical planarization technology 501 then on second dielectric layer, to reduce second dielectric layer thickness, as shown in Figure 5.Described method continues to reduce second dielectric layer thickness up to the surface region that exposes each electrode district.Preferably, described method uses chemical-mechanical planarization technology to contact the surface region of each electrode district of polishing, is reduced to second predetermined level with the surface roughness with described surface region from first predeterminated level.
According to application, can carry out the contact polishing operation of silver metal with suitable parameter.In one embodiment, contact glossing as described in can providing by the EPO-222 that cmp tool is made as Ebara, but also can pass through other instruments.Described contact polishing is characterised in that the rubbing head that application is rotated with a speed of 20 to 40RPM.Described contact glossing comprises rubbing head is applied on the zone of overlay pattern silver metal layer that described rubbing head comprises the cushion of making as by Rodel that is called Polytex.Preferably, described contact glossing uses the pulp mixture of selecting.According to a specific embodiment, resulting minute surface is characterised in that for wavelength 500 nanometers and bigger light to have 97% and bigger reflectivity.Other alternative, variation and change can be arranged certainly.Alternatively, described method is carried out chemical-mechanical planarization, etch-back and is contacted the combination of polishing, shown in Fig. 5,6 and 7.Described method is carried out oxide chemistry mechanical planarization metallization processes 551.Variation, change and alternative that other can be arranged certainly.
Described method is carried out etch back process 601, as shown in Figure 6.This etch back process can be dry method or wet method or its combination.Described etch back process depends on suitable etch recipe.Carry out the upper surface of etch back process up to the exposure pattern silver layer.Described method is carried out contact glossing 701 then, as shown in Figure 7.In one embodiment, described contact glossing can provide as the EPO-222 that is made by Ebara by cmp tool, but also can pass through other instruments.Described contact polishing is characterised in that application is with the rubbing head of 20RPM to the speed rotation of 40RPM.Described contact glossing comprises rubbing head is applied on the zone of overlay pattern silver layer that described rubbing head comprises the cushion of making as by Rodel that is called Polytex.Preferably, described contact glossing uses the pulp mixture of selecting.According to a specific embodiment, resultant minute surface is characterised in that for wavelength 500 nanometers and bigger light to have 97% and bigger reflectivity.Other alternative, variation and change can be arranged certainly.
Described method also comprises each the protective layer of surface region that form to cover in a plurality of electrode districts, to protect the surface region with polishing mirror of each electrode district.Preferably, in the LCOS device of finishing, at least 95% light returns from the polishing mirroring.Alternatively, forming on the ag material before the liquid crystal material, ag material remains in the processing environment of inertia basically, to prevent the described any oxidation that contains ag material.In one embodiment, described inertization environment is nitrogen basically, or any other nonreactant.According to this embodiment, other variation, change and alternative can be arranged.
For finishing the LCOS device, described method forms the interlayer with liquid crystal material.Form the liquid crystal film of coated electrode here.Form the transparent electrode structure that covers liquid crystal film.Described method forms the glass plate of covering transparent electrode.Sandwich usually forms assembly, and it is arranged on the electrode surface of LCOS device subsequently.Certainly, those skilled in the art will recognize that many variations, alternative and change.
Embodiment:
In order to prove principle of the present invention and work, we have carried out various experiments.These experiments only are examples, and it should excessively not limit the scope of claim among the present invention.Those skilled in the art will recognize that many variations, change and alternative.As will be shown below, we provide some aspect of these experiments invention so that we to be described.Select silver to electroplate and illustrate as deposition process, this is main to be characterised in that low temperature and low cost process normally because electroplate.Silicon wafer is used for experiment, and uses physical vapour deposition (PVD) to apply about 1200
The copper film.Electroplate some part of these wafers with silver.Assess different plating prescriptions and parameter film characteristics needing to obtain.Measure the reflectivity of described part in the wave-length coverage of 400-800nm with Perkin Elmer Lambda 900 spectrometers.
In this embodiment, realize about 89% reflectivity at 400nm, it is lower than aluminium slightly.Yet along with wavelength increases, the reflectivity of silver increases sharply.Reach 95% at the 450nm reflectivity, and surpass 97% when wavelength reflectivity when 500nm is above.According to described experiment, these data have shown higher than aluminium film basically mass reflex rate.The silver-colored film that can polish plating then is with planarization and improve reflectivity and form the pattern that needs.
Although used plating, also can use physical vapor deposition (PVD) or chemical vapor deposition (CVD) to come the depositing silver film.Can use or deduct or mosaic mode come integrated, and detailed technology integrated will be recorded in independent open in.Should point out that silver is easy to oxidation, and owing to tarnishing with reaction of Salmon-Saxl.Therefore, the silver-colored film of finishing should seal up hill and dale with isolated atmosphere, thus the deterioration of avoiding.
Although below be illustrated, other variation, change and alternative can be arranged also with regard to mosaic technology.For instance, described method can be the conventional photoetching technique that does not have chemico-mechanical polishing.In addition,
Also should understand, here example of being put down in writing and embodiment only are for illustrative purpose, those skilled in the art will expect various changes or the variation according to these examples and embodiment, and these changes or variation also should be included in the scope of the spirit and scope of the present invention and claims.
Claims (20)
1. a utilization is made the method for LCOS device to the chemico-mechanical polishing of mirror structure, and described method comprises:
Semiconductor chip is provided;
Form first dielectric layer that covers described semiconductor chip;
Form the silver metal layer that covers described dielectric layer, described silver metal layer has upper surface, and described upper surface has the predetermined roughness of measuring with RMS;
The described silver metal layer of patterning is to expose the part of described dielectric layer, and described expose portion forms around the border of one of a plurality of patterns of described patterning silver metal layer, and one of described a plurality of patterns are corresponding to a pixel element;
Form second dielectric layer of the expose portion that covers described silver metal layer and described dielectric layer;
Remove the part of described second dielectric layer, near the zone in the upper surface of described patterning silver metal layer;
Use glossing to handle the zone that covers described patterning silver metal layer, be reduced to less than 5 dusts with surface roughness the upper surface of described patterning silver metal layer, so that form minute surface on the upper surface of described patterning silver metal layer, described minute surface is corresponding to described pixel element.
2. method as claimed in claim 1, wherein said first dielectric layer is a single or multiple lift.
3. method as claimed in claim 1, wherein said second dielectric layer is a single or multiple lift.
4. method as claimed in claim 1, wherein said formation silver metal layer comprises electroplating technology.
5. method as claimed in claim 4, wherein said electroplating technology keeps in ambient temperature and lower temperature.
6. method as claimed in claim 1, wherein said minute surface are characterised in that for about 500 nanometers of wavelength and bigger visible light to have 97% and bigger reflectivity.
7. method as claimed in claim 1, wherein said minute surface are characterised in that for about 450 nanometers of wavelength and bigger visible light to have 95% and bigger reflectivity.
8. method as claimed in claim 1, wherein said minute surface are characterised in that the visible light for about 400 nanometers of wavelength has about 89% reflectivity.
9. method as claimed in claim 1 further comprises described minute surface is remained in the inert environments.
10. method as claimed in claim 9, wherein said inert environments consists essentially of nitrogen.
11. a method of making the LCOS device, described method comprises:
Semiconductor chip is provided;
Form a plurality of MOS transistor devices, described a plurality of MOS transistor devices are formed on the part of semiconductor chip;
Form first dielectric layer that covers described a plurality of transistor devices;
Form the first metal layer that covers described first dielectric layer;
Form second dielectric layer that covers described the first metal layer; And
Form basically by a plurality of pixel regions that ag material is made that contain that cover described second dielectric layer.
12. a LCOS device comprises:
Semiconductor chip;
The a plurality of MOS transistor devices that on the part of described semiconductor chip, form;
Cover first dielectric layer of described a plurality of transistor devices;
Cover the first metal layer of described first dielectric layer;
Cover second dielectric layer of described the first metal layer; And
Basically by a plurality of pixel regions that ag material is made that contain that cover described second dielectric layer.
13. as the LCOS device of claim 12, the thickness of wherein said pixel region is at least 2000 dusts.
14. as the LCOS device of claim 12, wherein said pixel region provides by electroplating technology.
15. as the LCOS device of claim 12, wherein said pixel region utilizes PVD or CVD technology to provide.
16. as the LCOS device of claim 12, wherein for wavelength 500 nanometers and bigger visible light, each described pixel region has the surface reflectivity greater than 97%.
17. as the LCOS device of claim 12, wherein said a plurality of pixel regions are to utilize mosaic technology to provide.
18. as the LCOS device of claim 12, wherein each described pixel region remains in the inert environments.
19. the LCOS device as claim 12 further comprises the liquid crystal material that covers each described pixel region, each described pixel region is not subjected to any oxidation basically.
20. as the LCOS device of claim 12, further comprise forming the coating that covers described a plurality of pixel regions, be not subjected to any oxidation to keep the described ag material that contains.
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| CN200710042342XA CN101330051B (en) | 2007-06-21 | 2007-06-21 | Method for obtaining LCOS device using argentum and generated structure thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102615585A (en) * | 2011-01-26 | 2012-08-01 | 株式会社迪思科 | Grinding apparatus |
| CN104049424A (en) * | 2014-06-26 | 2014-09-17 | 安徽大学 | Pixel structure of LCOS space optical modulator for holographic video display |
| CN111856808A (en) * | 2019-04-30 | 2020-10-30 | 豪威科技股份有限公司 | Mirror metal process for liquid crystal on silicon device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6797983B2 (en) * | 2002-01-30 | 2004-09-28 | United Microelectronics Corp. | Method of fabrication LCOS structure |
| CN2636277Y (en) * | 2003-06-13 | 2004-08-25 | 南开大学 | High-reflection thin type lens electrode for silicon base LCD |
| CN100356258C (en) * | 2003-12-30 | 2007-12-19 | 中芯国际集成电路制造(上海)有限公司 | Method for making metallic reflective layer of silicon based LCD device |
| CN100460942C (en) * | 2004-06-02 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | Process for making smoothing lens of liquid crystal on silicon (LCOS) and structure thereof |
| CN1725068A (en) * | 2004-07-21 | 2006-01-25 | 联华电子股份有限公司 | Silicon base liquid crystal display |
| CN100442108C (en) * | 2004-09-15 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Aluminum cemical mechanical polishing eat-back for liquid crystal device on silicon |
| CN2802729Y (en) * | 2004-10-19 | 2006-08-02 | 南开大学 | Picture element unit storage capacitor of silicon-base liquid rystal display chip |
| CN1804694A (en) * | 2006-01-11 | 2006-07-19 | 深圳市科创数字显示技术有限公司 | Making method for liquid crystal LCOS and laminating apparatus therefor |
-
2007
- 2007-06-21 CN CN200710042342XA patent/CN101330051B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102615585A (en) * | 2011-01-26 | 2012-08-01 | 株式会社迪思科 | Grinding apparatus |
| CN102615585B (en) * | 2011-01-26 | 2016-06-15 | 株式会社迪思科 | Grinding attachment |
| CN104049424A (en) * | 2014-06-26 | 2014-09-17 | 安徽大学 | Pixel structure of LCOS space optical modulator for holographic video display |
| CN104049424B (en) * | 2014-06-26 | 2016-08-24 | 安徽大学 | Dot structure for the liquid crystal on silicon spatial light modulator that holographic video shows |
| CN111856808A (en) * | 2019-04-30 | 2020-10-30 | 豪威科技股份有限公司 | Mirror metal process for liquid crystal on silicon device |
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| CN101330051B (en) | 2010-08-11 |
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