CN101329410B - Deep sea geomagnetic field survey instrument circuit - Google Patents
Deep sea geomagnetic field survey instrument circuit Download PDFInfo
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- CN101329410B CN101329410B CN2008100632701A CN200810063270A CN101329410B CN 101329410 B CN101329410 B CN 101329410B CN 2008100632701 A CN2008100632701 A CN 2008100632701A CN 200810063270 A CN200810063270 A CN 200810063270A CN 101329410 B CN101329410 B CN 101329410B
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Abstract
The invention relates to a circuit of a deep-sea geomagnetic measuring instrument. The precision of the existing device is too low, thereby being lack of practical significance in the application of analyzing the geomagnetic micro-change of a small ocean bottom region. The circuit comprises a power supply circuit, a setting/resetting circuit, a sensing measuring circuit and a main control circuit, wherein, the sensing measuring circuit comprises a single-axis magnetoresistive sensor chip IC4, a dual-axis magnetoresistive sensor chip IC5, three same operational amplifier circuits 5, a high-precision AC chip IC6 and a voltage reference chip IC7. The main control circuit comprises a main control chip IC8, a gyroscope chip IC9, a level conversion chip IC10 and a reading/writing interface J1 of an SD card. The circuit adopts the magnetoresistive sensing technology to constitute a deep-sea geomagnetic measuring circuit and utilizes the characteristics of high sensitivity and low power consumption of the magnetoresistive sensors, thereby having simple circuit connection, reducing the noise by 1/f and improving the effective resolution.
Description
Technical field
The invention belongs to magnetic method exploration technique field, deep-sea, be specifically related to a kind of based on earth magnetism three-component measuring instrument circuit at the bottom of the deep sea offshore of magnetoresistive transducer.
Background technology
It is one of effective means of geologic examination and exploration that magnetic method is reconnoitred all the time, and along with the pay attention to day by day of countries in the world to the seabed mineral development of resources, magnetic method is reconnoitred gradually and is applied at marine field.How developing the various geomagnetic field survey instruments that are applied to the ocean according to different demand backgrounds, thereby effectively verify the distribution of seabed ferromagnetism ore body, is the key that current ocean magnetic method is reconnoitred means.In various marine magnetometers, earth magnetism three-component magnetometer is the emphasis of developing at present at the bottom of the coastal waters, Marine Geology scholar is in order to obtain the magnetic anomaly of shorter wavelength in the zone, deep-sea, and more ore body distribution details, being starved of can be at the three-component geomagnetic field survey instrument of the earth magnetism measured of territory, base area, coastal waters work.
Ripe on land optical pumping formula geomagnetic field survey instrument, Overhauser formula geomagnetic field survey instrument and the nucleon screw type geomagnetic field survey instruments of using etc. need lash ship that power supply is provided because of power consumption is bigger, can't carry out magnetic survey in territory, base area, coastal waters, only can pull magnetic survey near 50 meters, and optical pumping formula magnetometer and Overhauser formula geomagnetic field survey instrument can't record the magnetic field three-component on the distance sea.Can at the bottom of the coastal waters, measure the three-component geomagnetic field survey instrument of earth magnetism at present, its internally the magnetic measurement circuit all based on the fluxgate technology, the major defect of fluxgate type metering circuit is that precision is low excessively, because of its loop construction stability is not high, therefore the little allergic effect of earth magnetism of analyzing the zonule, seabed with in lack practical significance.
Summary of the invention
The object of the present invention is to provide a kind ofly, cross low and stable not high defective to overcome fluxgate type geomagnetic field survey instrument circuit precision based on earth magnetism three-component measuring instrument circuit at the bottom of the deep sea offshore of magnetoresistive transducer.
The present invention includes power circuit, set/reset circuit, sensing measurement circuit, governor circuit.
Power circuit comprises one-level power conversion chip IC1, secondary power supply conversion chip IC2, diode D1, resistance R 1, two electrochemical capacitor C3 and C4, three ceramic disc capacitor C1, C2 and C5.1 pin of one-level power conversion chip IC1 is an input end, is connected with the anode of 9V voltage source with diode D1, and 3 pin of one-level power conversion chip IC1 are the 5V voltage output end, is connected with 1 pin of secondary power supply conversion chip IC2; The negative electrode of diode D1 is connected with an end of resistance R 1, and the end of ceramic disc capacitor C1 is connected with 1 pin of one-level power conversion chip IC1, and the end of ceramic disc capacitor C2 is connected with 3 pin of one-level power conversion chip IC1; The other end ground connection of 2 pin of one-level power conversion chip IC1, the other end of resistance R 1, ceramic disc capacitor C1 and C2.1 pin of secondary power supply conversion chip IC2 is connected with the positive pole of electrochemical capacitor C3, and 3 pin of secondary power supply conversion chip IC2 are the 3.3V voltage output end, is connected with the positive pole of electrochemical capacitor C4 and the end of ceramic disc capacitor C5 respectively; The other end ground connection of the negative pole of electrochemical capacitor C3 and C4, ceramic disc capacitor C5.
The set/reset circuit comprises rectification chip IC3, resistance R 2, ceramic disc capacitor C6, electrochemical capacitor C7.Wherein 3 pin of rectification chip IC3 be connected with the 5V voltage output end of power circuit, 1 pin ground connection; One end of resistance R 2 is connected with the end of ceramic disc capacitor C6 with 4 pin of rectification chip IC3, and 2 pin of the other end of ceramic disc capacitor C6 and rectification chip IC3 are connected with governor circuit, and the other end of resistance R 2 is connected with 3 pin of rectification chip IC3; Be connected with the negative pole of electrochemical capacitor C7 after 5,6,7, the 8 pin parallel connections of rectification chip IC3, the positive pole of electrochemical capacitor C7 leads to the SR+ output terminal of set/reset circuit.
The sensing measurement circuit comprises single shaft magnetic resistance sensor chip IC4, twin shaft magnetoresistive transducer chip IC 5, three identical operational amplification circuits and high-precision A chip IC 6, voltage reference chip IC 7.
1 pin of single shaft magnetic resistance sensor chip IC4,14 pin of twin shaft magnetoresistive transducer chip IC 5 and 16 pin are connected with set/reset circuit SR+ output terminal respectively, 7 pin of single shaft magnetic resistance sensor chip IC4,4 pin of twin shaft magnetoresistive transducer chip IC 5 and 11 pin are connected with the 5V voltage output end of power circuit respectively, 1 pin of 3 pin of single shaft magnetic resistance sensor chip IC4 and 4 pin, twin shaft magnetoresistive transducer chip IC 5,6 pin, 7 pin, 8 pin, 13 pin, 18 pin and 20 pin ground connection.
Operational amplification circuit comprises that computing amplifies chip OP, and the end after resistance R es1 and the capacitor C ap1 parallel connection is connected with 1 pin of computing amplification chip OP, and the other end after the parallel connection is connected with the end of resistance R es2; End after resistance R es3 and the capacitor C ap2 parallel connection amplifies 6 pin of chip OP with computing and the other end of resistance R es2 is connected, and the other end after the parallel connection is connected with 7 pin of computing amplification chip OP; The end of resistance R es4 is connected with 1 pin that chip OP is amplified in computing, and the other end is connected with the end of capacitor C ap3; The end of resistance R es5 is connected with 7 pin that chip OP is amplified in computing, and the other end is connected with the other end of capacitor C ap3; 8 pin that chip OP is amplified in computing are connected with the 5V voltage output end of power circuit, 4 pin ground connection.
3 pin that chip OP is amplified in computing in first operational amplification circuit are connected with 5 pin of single shaft magnetic resistance sensor chip IC4, and 5 pin are connected with 8 pin of single shaft magnetic resistance sensor chip IC4; 3 pin that chip OP is amplified in computing in second operational amplification circuit are connected with 2 pin of twin shaft magnetoresistive transducer chip IC 5, and 5 pin are connected with 5 pin of twin shaft magnetoresistive transducer chip IC 5; 3 pin that chip OP is amplified in computing in the 3rd operational amplification circuit are connected with 9 pin of twin shaft magnetoresistive transducer chip IC 5, and 5 pin are connected with 12 pin of twin shaft magnetoresistive transducer chip IC 5.
1 pin that chip OP is amplified in computing in three operational amplification circuits is connected with 8 pin, 9 pin and 10 pin of high-precision A chip IC 6 respectively by resistance R es4, and 7 pin pass through resistance R es5 and are connected with 7 pin of high-precision A chip IC 6 respectively.
4 pin of high-precision A chip IC 6,5 pin, 11 pin, 12 pin, 13 pin, 23 pin are connected with the 5V voltage output end of power circuit, 14 pin, 18 pin, 24 pin ground connection; 3 pin of high-precision A chip IC 6 are connected with the end of the end of crystal oscillator XTAL1 and ceramic disc capacitor C8, and 2 pin are connected the other end ground connection of ceramic disc capacitor C8 and C9 with the other end of crystal oscillator XTAL1 and the end of ceramic disc capacitor C9; 17 pin of high-precision A chip IC 6 are connected with 6 pin of voltage reference chip IC 7.
2 pin of voltage reference chip IC 7 are connected with the 5V voltage output end of power circuit, 4 pin ground connection; 2 pin of voltage reference chip IC 7 are connected with the positive pole of electrochemical capacitor C10,3 pin of voltage reference chip IC 7 are connected with the end of ceramic disc capacitor C11,6 pin of voltage reference chip IC 7 are connected the other end ground connection of the negative pole of electrochemical capacitor C10 and C12, ceramic disc capacitor C11 and C13 with the end of the positive pole of electrochemical capacitor C12 and ceramic disc capacitor C13.
Governor circuit comprises main control chip IC8, gyroscope chip IC 9, level transferring chip IC10 and SD card read-write interface J1.
23 pin of main control chip IC8,43 pin, 49 pin are connected with the 3.3V voltage output end of power circuit, 7 pin, 18 pin, 25 pin, 42 pin ground connection; 3 pin of main control chip IC8 are connected with the end of the end of crystal oscillator XTAL2 and ceramic disc capacitor C14,5 pin are connected with the other end of crystal oscillator XTAL2 and the end of ceramic disc capacitor C15,62 pin of main control chip IC8 are connected with the end of the end of crystal oscillator XTAL3 and ceramic disc capacitor C16,61 pin are connected the other end ground connection of ceramic disc capacitor C14, C15, C16, C17 with the other end of crystal oscillator XTAL3 and the end of ceramic disc capacitor C17; 57 pin of main control chip IC8 are connected with an end of resistance R 3, and the other end of resistance R 3 is connected with the 3.3V output terminal of power circuit; Switch RESET is connected other end ground connection with capacitor C 18 backs in parallel one end with 57 pin of main control chip IC8.51 pin of main control chip IC8 are connected with an end of resistance R 4, and the other end of resistance R 4 is connected with 55 pin of main control chip IC8; 23 pin of main control chip IC8 are connected with an end of resistance R 5, and the other end of resistance R 5 is connected with 31 pin of main control chip IC8; 30 pin of main control chip IC8 are connected with the end of pull-up resistor R6,29 pin are connected with the end of pull-up resistor R7,35 pin are connected with the end of pull-up resistor R8,37 pin are connected with the end of pull-up resistor R9, and the other end of pull-up resistor R6, R7, R8, R9 is connected with the 3.3V voltage output end of power circuit; 35 pin of main control chip IC8 are connected with an end of resistance R 11, and the other end of resistance R 11 is connected with 10 pin of SD card read-write interface J1; 37 pin of main control chip IC8 are connected with an end of resistance R 12, and the other end of resistance R 12 is connected with 12 pin of SD card read-write interface J1; 40 pin of main control chip IC8 are connected with an end of resistance R 10, the other end of resistance R 10 is connected with the grid of field effect transistor MOSFET, the source electrode of field effect transistor MOSFET is connected with the 3.3V voltage output end of power circuit, and the drain electrode of field effect transistor MOSFET is connected with 5 pin of SD card read-write interface J1.1 pin of main control chip IC8 is connected with 2 pin in the set/reset IC circuit 3; 1 pin of high-precision A conversion chip IC6 in 2 pin of main control chip IC8 and the sensing measurement circuit is connected; 22 pin of high-precision A conversion chip IC6 in 4 pin of main control chip IC8 and the sensing measurement circuit are connected; 21 pin of high-precision A conversion chip IC6 in 8 pin of main control chip IC8 and the sensing measurement circuit are connected; 20 pin of high-precision A conversion chip IC6 in 12 pin of main control chip IC8 and the sensing measurement circuit are connected; 19 pin of high-precision A conversion chip IC6 in 13 pin of main control chip IC8 and the sensing measurement circuit are connected; 6 pin of high-precision A conversion chip IC6 in 14 pin of main control chip IC8 and the sensing measurement circuit are connected; 27 pin of main control chip IC8 are connected with 6 pin of SD card read-write interface J1; 29 pin of main control chip IC8 are connected with 8 pin of SD card read-write interface J1; 30 pin of main control chip IC8 are connected with 3 pin of SD card read-write interface J1; 46 pin of main control chip IC8 are connected with 2 pin of SD card read-write interface J1;
8 pin of gyroscope chip IC 9,10 pin, 11 pin, 12 pin are connected with the 5V voltage output end of power circuit, 13 pin, 14 pin, 15 pin ground connection; 3 pin of gyroscope chip IC 9 are connected with 47 pin of main control chip IC8; 4 pin of gyroscope chip IC 9 are connected with 53 pin of main control chip IC8; 5 pin of gyroscope chip IC 9 are connected with 54 pin of main control chip IC8; 6 pin of gyroscope chip IC 9 are connected with 48 pin of main control chip IC8; 7 pin of gyroscope chip IC 9 are connected with 22 pin of main control chip IC8; 9 pin of gyroscope chip IC 9 are connected with 26 pin of main control chip IC8.
16 pin of level transferring chip IC10 are connected with the 5V voltage output end of power circuit, 15 pin ground connection; 2 pin of level transferring chip IC10 are connected with an end of capacitor C 19, and the other end of capacitor C 19 is connected with 16 pin of level transferring chip IC10; 1 pin of level transferring chip IC10 is connected with an end of capacitor C 20, and the other end of capacitor C 20 is connected with 3 pin of level transferring chip IC10; 4 pin of level transferring chip IC10 are connected with an end of capacitor C 21, and the other end of capacitor C 21 is connected with 5 pin of level transferring chip IC10; 6 pin of level transferring chip IC10 are connected with an end of capacitor C 22, the other end ground connection of capacitor C 22; 11 pin of level transferring chip IC10 are connected with 19 pin of main control chip IC8; 12 pin of level transferring chip IC10 are connected with 21 pin of main control chip IC8.
4 pin of SD card read-write interface J1,7 pin, 11 pin ground connection; 1 pin of SD card read-write interface J1 is connected with an end of resistance R 13, and 9 pin are connected with an end of resistance R 14, the other end ground connection of the other end of resistance R 13 and resistance R 14; 5 pin of SD card read-write interface J1 are connected with an end of capacitor C 23, the other end ground connection of capacitor C 23.
Power conversion chip IC1, IC2 among the present invention, rectification chip IC3, single shaft magnetic resistance sensor chip IC4, twin shaft magnetoresistive transducer chip IC 5, chip OP is amplified in computing, high-precision A chip IC 6, voltage reference chip IC 7, main control chip IC8, gyroscope chip IC 9, level transferring chip IC10 all adopts matured product.One-level power conversion chip IC1 adopts the KA7805 of Fairchild Semi company, secondary power supply conversion chip IC2 adopts ISP1117, rectification chip IC3 adopts the IRF7106 of IR company, single shaft magnetic resistance sensor chip IC4 adopts the HMC1001 of Honeywell company, twin shaft magnetoresistive transducer chip IC 5 adopts the HMC1002 of Honeywell company, the CS3001 that chip OP adopts CIRRUS LOGIC company is amplified in computing in three operational amplification circuits, high-precision A chip IC 6 adopts the AD7714 of Anolog Device company, voltage reference chip IC 7 adopts the AD780 of AnologDevice company, main control chip IC8 adopts the LPC2146 of Phillip Semi company, gyroscope chip IC 9 adopts the ADIS16355 of Anolog Device company, and level transferring chip IC10 adopts the MAX3232 of Maxium company.
The deep sea geomagnetic field survey circuit that the present invention adopts the magneto-resistive transducing technology to constitute, high sensitivity, the low-power consumption characteristics of reluctive transducer have been utilized, and in the sensing measurement circuit design, extremely low noise amplifier chip and high-precision AD chip have been selected, circuit connects simple, reduce 1/f noise, improved effective resolution.Also considered the read-write interface, data in real time transmission interface (RS232) of high capacity storage chip (SD card) on the circuit design, based on the gyrostatic attitude measurement technology of MEMS, constituted a kind of new deep sea geomagnetic field survey circuit.Compare with background technology, this circuit not only can be at base area, coastal waters domain measurement earth magnetism three-component, and all is better than the fluxgate type metering circuit on technical indicator.Concrete technical indicator is as follows:
Absolute precision:＜10nT
Resolution: 0.5nT
Circuit noise:
RMS：50μV
Circuit power consumption: 0.5W
Description of drawings
Fig. 1 is an integrated circuit synoptic diagram of the present invention;
Fig. 2 is the power circuit synoptic diagram among Fig. 1;
Fig. 3 is the set/reset circuit diagram among Fig. 1;
Fig. 4 is the sensing measurement circuit diagram among Fig. 1;
Fig. 5 is the operational amplification circuit synoptic diagram among Fig. 4;
Fig. 6 is the governor circuit synoptic diagram among Fig. 1.
Embodiment
The present invention includes power circuit 1, set/reset circuit 3, sensing measurement circuit 2, governor circuit 4.
As shown in Figure 1, power circuit 1 provides+the 5V power supply for sensing measurement circuit 2, provides+the 5V power supply for set/reset circuit 3, give governor circuit 4 provide+the 5V power supply and+the 3.3V power supply.Set/reset circuit 3 provides RESET signal for sensing measurement circuit 2, and sensing measurement circuit 2 is given governor circuit 4 with measurement data, and governor circuit 4 is by RS232 interface and extraneous communication.
As shown in Figure 2, power circuit comprises power conversion chip IC1, IC2, diode D1, resistance R 1, electrochemical capacitor C3, C4, ceramic disc capacitor C1, C2, C5.Wherein, one-level power conversion chip IC1 adopts the KA7805 of Fairchild Semi company, and secondary power supply conversion chip IC2 adopts ISP1117.
1 pin of power conversion chip IC1 is an input end, links to each other with the input of 9V voltage source, and 1 ceramic disc capacitor C1 in parallel simultaneously also links to each other with the anode of diode D1 simultaneously to ground, and the negative electrode of diode D1 links to each other with an end of resistance R 1, the other end ground connection of resistance R 1.The 2 pin ground connection of power conversion chip IC1.3 pin of power conversion chip IC1 are output terminal, are connected to 1 pin of power conversion chip IC2, and 1 ceramic disc capacitor C2 simultaneously in parallel and 1 electrochemical capacitor C3 be to ground, 3 pin of IC1 also lead to simultaneously whole power circuit+the 5V output terminal.1 pin of power conversion chip IC2 is an input end, 2 pin ground connection, and 3 pin are output terminal.3 pin of IC2 meet 1 electrochemical capacitor C4 and 1 ceramic disc capacitor C5 to ground, also lead to simultaneously whole power circuit+the 3.3V output terminal.
As shown in Figure 3, the set/reset circuit comprises rectification chip IC3, resistance R 2, ceramic disc capacitor C6, electrochemical capacitor C7.Wherein, rectification chip IC3 adopts the IRF7106 of IR company.
3 pin of IC3 connect power supply, 1 pin ground connection, 2 pin connect the SET/RESET output terminal of governor circuit, 4 pin connect 1 resistance R, 2 to 3 pin, simultaneously meet 1 ceramic disc capacitor C6 again to 2 pin, 5, receive the negative terminal of electrochemical capacitor C7 after 6,7, the 8 pin parallel connections, the anode of C7 leads to the SR+ output terminal of set/reset circuit.
As shown in Figure 4, the sensing measurement circuit comprises operational amplification circuit 5, the high-precision A chip IC 6 of single shaft magnetic resistance sensor chip IC4, twin shaft magnetoresistive transducer chip IC 5, three same structures, voltage reference chip IC 7, capacitor C 8, C9, C10, C11, C12, C13, crystal oscillator XTAL1.Wherein, single shaft magnetic resistance sensor chip IC4 adopts the HMC1001 of Honeywell company, twin shaft magnetoresistive transducer chip IC 5 adopts the HMC1002 of Honeywell company, high-precision A chip IC 6 adopts the AD7714 of AnologDevice company, and voltage reference chip IC 7 adopts the AD780 of Anolog Device company.
7 pin of single shaft magnetic resistance sensor chip IC4 connect power circuit+5V output terminal, 3 pin and 4 pin ground connection, and 1 pin connects the SR+ output terminal of set/reset circuit, and 5 pin are connected with first operational amplification circuit as signal output part with 8 pin.11 pin of twin shaft magnetoresistive transducer chip IC 5 connect power circuit+5V output terminal, 1,6,7,8,13,18,20 pin while ground connection, 14,16 pin connect the SR+ output terminal of set/reset circuit, 2 pin are connected with second operational amplification circuit as the 1 road signal output part with 5 pin, and 9 pin are connected with the 3rd operational amplification circuit as the 2 road signal output part with 12 pin.2 pin of voltage reference chip IC 7 connect power circuit+5V output terminal, 4 pin ground connection, 1 electrochemical capacitor C10 of 2 pin cross-over connections is to ground, 1 ceramic disc capacitor C11 of 3 pin cross-over connections is to ground, be connected in parallel between 6 pin and the ground electrochemical capacitor C12 and ceramic disc capacitor C13,6 pin connect 15 pin and 17 pin of AD chip IC 6 as reference voltage output end simultaneously.4 of AD chip IC 6,5,11,12,13,23 connect simultaneously power circuit+the 5V output terminal, 14,18,24 pin are ground connection simultaneously, cross-over connection crystal oscillator XTAL1 between 2 pin and 3 pin, 2 pin and 3 pin difference cross-over connection ceramic disc capacitor C8 and C9 are to ground, 6 pin are as 14 pin among the reset terminal connection governor circuit IC8 of IC6,1 pin connects 2 pin of IC8 in the governor circuit as the serial clock of IC6,19 pin connect 13 pin of IC8 in the governor circuit as the low level gating end of IC6,20 pin connect 12 pin of IC8 in the governor circuit as the serial data live end of IC6,21 pin are as 8 pin of IC8 in the serial data output terminal connection governor circuit of IC6, and 22 pin are as 4 pin among the serial data input end connection governor circuit IC8 of IC6.
As shown in Figure 5, operational amplification circuit comprises that computing amplifies chip OP, and the end after resistance R es1 and the capacitor C ap1 parallel connection is connected with 1 pin of computing amplification chip OP, and the other end after the parallel connection is connected with the end of resistance R es2; End after resistance R es3 and the capacitor C ap2 parallel connection amplifies 6 pin of chip OP with computing and the other end of resistance R es2 is connected, and the other end after the parallel connection is connected with 7 pin of computing amplification chip OP; The end of resistance R es4 is connected with 1 pin that chip OP is amplified in computing, and the other end is connected with the end of capacitor C ap3; The end of resistance R es5 is connected with 7 pin that chip OP is amplified in computing, and the other end is connected with the other end of capacitor C ap3; 8 pin that chip OP is amplified in computing are connected with the 5V voltage output end of power circuit, 4 pin ground connection.The CS3001 that chip OP adopts CIRRUS LOGIC company is amplified in computing in three operational amplification circuits.
As shown in Figure 6, governor circuit comprises main control chip IC8, gyroscope chip IC 9, level transferring chip IC10, SD card read-write interface J1, resistance R 3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, capacitor C 14, C15, C16, C17, C18, C19, C20, C21, C22, C23, crystal oscillator XTAL2, XTAL3, switch RESET, field effect transistor MOSFET.Wherein, main control chip IC8 adopts the LPC2146 of Phillip Semi company, and gyroscope chip IC 9 adopts the ADIS16355 of AnologDevice company, and level transferring chip IC10 adopts the MAX3232 of Maxium company.
8,10,11,12 pin of gyroscope chip IC 9 connect power circuit+5V output terminal, 13,14,15 pin ground connection, 3,4,5,6 pin are connected with 47,53,54,48 pin of main control chip IC8 respectively as spi bus, and 7,9 pin are connected with 22,26 pin of IC8 respectively as auxiliary IO mouth.16 pin of level transferring chip IC10 connect power circuit+5V output terminal, 15 pin ground connection, 1 capacitor C 19 of cross-over connection between 2 pin and 16 pin, 1 capacitor C 20 of cross-over connection between 1 pin and 3 pin, 1 capacitor C 21 of cross-over connection between 4 pin and 5 pin, 1 capacitor C of 6 pin cross-over connections 22 is to ground, and 11,12 pin are connected with 19,21 pin of IC8 respectively, and 13,14 pin and ground wire are drawn as three-way RS232.23 of main control chip IC8,43,49 pin connect power circuit+3.3V output terminal, 7,18,25,42 pin ground connection, cross-over connection crystal oscillator XTAL2 between 3 pin and 5 pin, 3 pin and 5 pin difference cross-over connection capacitor C 14 and C15 are to ground, cross-over connection crystal oscillator XTAL3 between 62 pin and 61 pin, 62 pin and 61 pin difference cross-over connection capacitor C 16 and C17 are to ground, 1 capacitor C of 57 pin cross-over connections 18 is to ground, 1 switch RESET of cross-over connection simultaneously is to ground, 1 resistance R of 57 pin cross-over connections 3 arrives power circuit+3.3V output terminal, resistance R 4 of cross-over connection between 51 pin and 55 pin, resistance R 5 of cross-over connection between 23 pin and 31 pin, 30 pin, 29 pin, 35 pin, 37 pin meet 1 pull-up resistor R6 respectively, R7, R8, R9 to power circuit+the 3.3V output terminal, 27 pin, 29 pin, 30 pin, 46 pin respectively with 6 pin of SD card read-write interface J1,8 pin, 3 pin, 2 pin connect, 35 pin and 37 pin are cross-over connection resistance R 11 and 10 pin and 12 pin of R12 to J1 respectively, the grid of 40 pin cross-over connection resistance R 10 to MOSFET.4,7, the 11 pin ground connection of SD card read-write interface J1,1 pin and 9 pin cross-over connection resistance R 13 and R14 are to ground, and 5 pin cross-over connection capacitor C 23 are to ground, and 5 pin are connected with the drain electrode of MOSFET simultaneously.The source electrode of MOSFET directly with power circuit+the 3.3V output terminal is connected.
System involved in the present invention can carry in arbitrary no magnetic or weak magnetic drag formula underwater kit that possesses the lift-launch condition, carry out the pull-type magnetic survey, the darkest measuring condition is depth of water 4000M, the longest Measuring Time is 72 hours, can survey the terrestrial magnetic field due east, Zheng Bei, the three-component value of hanging down, for seabed vector magnetic anomaly becomes figure that raw data is provided, provide possibility for searching seabed short wavelength's magnetic anomaly.
Claims (1)
1. a deep sea geomagnetic field survey instrument circuit comprises power circuit, set/reset circuit, sensing measurement circuit, governor circuit, it is characterized in that:
Power circuit comprises one-level power conversion chip IC1, secondary power supply conversion chip IC2, diode D1, resistance R 1, two electrochemical capacitor C3 and C4, three ceramic disc capacitor C1, C2 and C5; 1 pin of one-level power conversion chip IC1 is an input end, is connected with the anode of 9V voltage source with diode D1, and 3 pin of one-level power conversion chip IC1 are the 5V voltage output end, is connected with 1 pin of secondary power supply conversion chip IC2; The negative electrode of diode D1 is connected with an end of resistance R 1, and the end of ceramic disc capacitor C1 is connected with 1 pin of one-level power conversion chip IC1, and the end of ceramic disc capacitor C2 is connected with 3 pin of one-level power conversion chip IC1; The other end ground connection of 2 pin of one-level power conversion chip IC1, the other end of resistance R 1, ceramic disc capacitor C1 and C2; 1 pin of secondary power supply conversion chip IC2 is connected with the positive pole of electrochemical capacitor C3, and 3 pin of secondary power supply conversion chip IC2 are the 3.3V voltage output end, is connected with the positive pole of electrochemical capacitor C4 and the end of ceramic disc capacitor C5 respectively; The other end ground connection of the negative pole of electrochemical capacitor C3 and C4, ceramic disc capacitor C5;
The set/reset circuit comprises rectification chip IC3, resistance R 2, ceramic disc capacitor C6, electrochemical capacitor C7; Wherein 3 pin of rectification chip IC3 be connected with the 5V voltage output end of power circuit, 1 pin ground connection; One end of resistance R 2 is connected with the end of ceramic disc capacitor C6 with 4 pin of rectification chip IC3, and 2 pin of the other end of ceramic disc capacitor C6 and rectification chip IC3 are connected with governor circuit, and the other end of resistance R 2 is connected with 3 pin of rectification chip IC3; Be connected with the negative pole of electrochemical capacitor C7 after 5,6,7, the 8 pin parallel connections of rectification chip IC3, the positive pole of electrochemical capacitor C7 leads to the SR+ output terminal of set/reset circuit;
The sensing measurement circuit comprises single shaft magnetic resistance sensor chip IC4, twin shaft magnetoresistive transducer chip IC 5, three identical operational amplification circuits and high-precision A chip IC 6, voltage reference chip IC 7;
1 pin of single shaft magnetic resistance sensor chip IC4,14 pin of twin shaft magnetoresistive transducer chip IC 5 and 16 pin are connected with set/reset circuit SR+ output terminal respectively, 7 pin of single shaft magnetic resistance sensor chip IC4,4 pin of twin shaft magnetoresistive transducer chip IC 5 and 11 pin are connected with the 5V voltage output end of power circuit respectively, 1 pin of 3 pin of single shaft magnetic resistance sensor chip IC4 and 4 pin, twin shaft magnetoresistive transducer chip IC 5,6 pin, 7 pin, 8 pin, 13 pin, 18 pin and 20 pin ground connection;
Operational amplification circuit comprises that computing amplifies chip OP, and the end after resistance R es1 and the capacitor C ap1 parallel connection is connected with 1 pin of computing amplification chip OP, and the other end after the parallel connection is connected with the end of resistance R es2; End after resistance R es3 and the capacitor C ap2 parallel connection amplifies 6 pin of chip OP with computing and the other end of resistance R es2 is connected, and the other end after the parallel connection is connected with 7 pin of computing amplification chip OP; The end of resistance R es4 is connected with 1 pin that chip OP is amplified in computing, and the other end is connected with the end of capacitor C ap3; The end of resistance R es5 is connected with 7 pin that chip OP is amplified in computing, and the other end is connected with the other end of capacitor C ap3; 8 pin that chip OP is amplified in computing are connected with the 5V voltage output end of power circuit, 4 pin ground connection;
3 pin that chip OP is amplified in computing in first operational amplification circuit are connected with 5 pin of single shaft magnetic resistance sensor chip IC4, and 5 pin are connected with 8 pin of single shaft magnetic resistance sensor chip IC4; 3 pin that chip OP is amplified in computing in second operational amplification circuit are connected with 2 pin of twin shaft magnetoresistive transducer chip IC 5, and 5 pin are connected with 5 pin of twin shaft magnetoresistive transducer chip IC 5; 3 pin that chip OP is amplified in computing in the 3rd operational amplification circuit are connected with 9 pin of twin shaft magnetoresistive transducer chip IC 5, and 5 pin are connected with 12 pin of twin shaft magnetoresistive transducer chip IC 5;
1 pin that chip OP is amplified in computing in three operational amplification circuits is connected with 8 pin, 9 pin and 10 pin of high-precision A chip IC 6 respectively by resistance R es4, and 7 pin pass through resistance R es5 and are connected with 7 pin of high-precision A chip IC 6 respectively;
4 pin of high-precision A chip IC 6,5 pin, 11 pin, 12 pin, 13 pin, 23 pin are connected with the 5V voltage output end of power circuit, 14 pin, 18 pin, 24 pin ground connection; 3 pin of high-precision A chip IC 6 are connected with the end of the end of crystal oscillator XTAL1 and ceramic disc capacitor C8, and 2 pin are connected the other end ground connection of ceramic disc capacitor C8 and C9 with the other end of crystal oscillator XTAL1 and the end of ceramic disc capacitor C9; 17 pin of high-precision A chip IC 6 are connected with 6 pin of voltage reference chip IC 7;
2 pin of voltage reference chip IC 7 are connected with the 5V voltage output end of power circuit, 4 pin ground connection; 2 pin of voltage reference chip IC 7 are connected with the positive pole of electrochemical capacitor C10,3 pin of voltage reference chip IC 7 are connected with the end of ceramic disc capacitor C11,6 pin of voltage reference chip IC 7 are connected the other end ground connection of the negative pole of electrochemical capacitor C10 and C12, ceramic disc capacitor C11 and C13 with the end of the positive pole of electrochemical capacitor C12 and ceramic disc capacitor C13;
Governor circuit comprises main control chip IC8, gyroscope chip IC 9, level transferring chip IC10 and SD card read-write interface J1;
23 pin of main control chip IC8,43 pin, 49 pin are connected with the 3.3V voltage output end of power circuit, 7 pin, 18 pin, 25 pin, 42 pin ground connection; 3 pin of main control chip IC8 are connected with the end of the end of crystal oscillator XTAL2 and ceramic disc capacitor C14,5 pin are connected with the other end of crystal oscillator XTAL2 and the end of ceramic disc capacitor C15,62 pin of main control chip IC8 are connected with the end of the end of crystal oscillator XTAL3 and ceramic disc capacitor C16,61 pin are connected the other end ground connection of ceramic disc capacitor C14, C15, C16, C17 with the other end of crystal oscillator XTAL3 and the end of ceramic disc capacitor C17; 57 pin of main control chip IC8 are connected with an end of resistance R 3, and the other end of resistance R 3 is connected with the 3.3V output terminal of power circuit; Switch RESET is connected other end ground connection with capacitor C 18 backs in parallel one end with 57 pin of main control chip IC8; 51 pin of main control chip IC8 are connected with an end of resistance R 4, and the other end of resistance R 4 is connected with 55 pin of main control chip IC8; 23 pin of main control chip IC8 are connected with an end of resistance R 5, and the other end of resistance R 5 is connected with 31 pin of main control chip IC8; 30 pin of main control chip IC8 are connected with the end of pull-up resistor R6,29 pin are connected with the end of pull-up resistor R7,35 pin are connected with the end of pull-up resistor R8,37 pin are connected with the end of pull-up resistor R9, and the other end of pull-up resistor R6, R7, R8, R9 is connected with the 3.3V voltage output end of power circuit; 35 pin of main control chip IC8 are connected with an end of resistance R 11, and the other end of resistance R 11 is connected with 10 pin of SD card read-write interface J1; 37 pin of main control chip IC8 are connected with an end of resistance R 12, and the other end of resistance R 12 is connected with 12 pin of SD card read-write interface J1; 40 pin of main control chip IC8 are connected with an end of resistance R 10, the other end of resistance R 10 is connected with the grid of field effect transistor MOSFET, the source electrode of field effect transistor MOSFET is connected with the 3.3V voltage output end of power circuit, and the drain electrode of field effect transistor MOSFET is connected with 5 pin of SD card read-write interface J1; 1 pin of main control chip IC8 is connected with 2 pin in the set/reset IC circuit 3; 1 pin of high-precision A conversion chip IC6 in 2 pin of main control chip IC8 and the sensing measurement circuit is connected; 22 pin of high-precision A conversion chip IC6 in 4 pin of main control chip IC8 and the sensing measurement circuit are connected; 21 pin of high-precision A conversion chip IC6 in 8 pin of main control chip IC8 and the sensing measurement circuit are connected; 20 pin of high-precision A conversion chip IC6 in 12 pin of main control chip IC8 and the sensing measurement circuit are connected; 19 pin of high-precision A conversion chip IC6 in 13 pin of main control chip IC8 and the sensing measurement circuit are connected; 6 pin of high-precision A conversion chip IC6 in 14 pin of main control chip IC8 and the sensing measurement circuit are connected; 27 pin of main control chip IC8 are connected with 6 pin of SD card read-write interface J1; 29 pin of main control chip IC8 are connected with 8 pin of SD card read-write interface J1; 30 pin of main control chip IC8 are connected with 3 pin of SD card read-write interface J1; 46 pin of main control chip IC8 are connected with 2 pin of SD card read-write interface J1;
8 pin of gyroscope chip IC 9,10 pin, 11 pin, 12 pin are connected with the 5V voltage output end of power circuit, 13 pin, 14 pin, 15 pin ground connection; 3 pin of gyroscope chip IC 9 are connected with 47 pin of main control chip IC8; 4 pin of gyroscope chip IC 9 are connected with 53 pin of main control chip IC8; 5 pin of gyroscope chip IC 9 are connected with 54 pin of main control chip IC8; 6 pin of gyroscope chip IC 9 are connected with 48 pin of main control chip IC8; 7 pin of gyroscope chip IC 9 are connected with 22 pin of main control chip IC8; 9 pin of gyroscope chip IC 9 are connected with 26 pin of main control chip IC8;
16 pin of level transferring chip IC10 are connected with the 5V voltage output end of power circuit, 15 pin ground connection; 2 pin of level transferring chip IC10 are connected with an end of capacitor C 19, and the other end of capacitor C 19 is connected with 16 pin of level transferring chip IC10; 1 pin of level transferring chip IC10 is connected with an end of capacitor C 20, and the other end of capacitor C 20 is connected with 3 pin of level transferring chip IC10; 4 pin of level transferring chip IC10 are connected with an end of capacitor C 21, and the other end of capacitor C 21 is connected with 5 pin of level transferring chip IC10; 6 pin of level transferring chip IC10 are connected with an end of capacitor C 22, the other end ground connection of capacitor C 22; 11 pin of level transferring chip IC10 are connected with 19 pin of main control chip IC8; 12 pin of level transferring chip IC10 are connected with 21 pin of main control chip IC8;
4 pin of SD card read-write interface J1,7 pin, 11 pin ground connection; 1 pin of SD card read-write interface J1 is connected with an end of resistance R 13, and 9 pin are connected with an end of resistance R 14, the other end ground connection of the other end of resistance R 13 and resistance R 14; 5 pin of SD card read-write interface J1 are connected with an end of capacitor C 23, the other end ground connection of capacitor C 23.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100632701A CN101329410B (en) | 2008-07-29 | 2008-07-29 | Deep sea geomagnetic field survey instrument circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100632701A CN101329410B (en) | 2008-07-29 | 2008-07-29 | Deep sea geomagnetic field survey instrument circuit |
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| CN101329410A CN101329410A (en) | 2008-12-24 |
| CN101329410B true CN101329410B (en) | 2010-08-18 |
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| CN2008100632701A Expired - Fee Related CN101329410B (en) | 2008-07-29 | 2008-07-29 | Deep sea geomagnetic field survey instrument circuit |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105487026A (en) * | 2016-01-26 | 2016-04-13 | 东北电力大学 | Three-axis magnetic field intensity meter based on giant magnetoresistance effect chip |
| CN105785461B (en) * | 2016-05-10 | 2017-10-31 | 杭州电子科技大学 | A kind of measuring circuit of seabed three-component magnetometer |
| CN106093807A (en) * | 2016-08-08 | 2016-11-09 | 杭州电子科技大学 | A kind of measuring circuit of three-component magnetic gradiometer |
| CN107036589B (en) * | 2017-04-20 | 2018-02-23 | 中国人民解放军国防科学技术大学 | A kind of angle measurement system and its method for MEMS gyroscope |
| CN107907914B (en) * | 2017-12-26 | 2023-10-20 | 杭州电子科技大学 | Measurement circuit of true geography three-component magnetometer |
| CN111323008A (en) * | 2020-03-05 | 2020-06-23 | 北京航空航天大学 | Micromechanical gyroscope POS geomagnetic measurement circuit |
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