CN101325225A - 一种提高晶硅太阳电池短波响应的发射极结构 - Google Patents
一种提高晶硅太阳电池短波响应的发射极结构 Download PDFInfo
- Publication number
- CN101325225A CN101325225A CNA2008101165561A CN200810116556A CN101325225A CN 101325225 A CN101325225 A CN 101325225A CN A2008101165561 A CNA2008101165561 A CN A2008101165561A CN 200810116556 A CN200810116556 A CN 200810116556A CN 101325225 A CN101325225 A CN 101325225A
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- Prior art keywords
- crystal silicon
- silicon layer
- layer
- conductive electrode
- electrode layer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 71
- 229910052710 silicon Inorganic materials 0.000 title claims description 71
- 239000010703 silicon Substances 0.000 title claims description 71
- 239000013078 crystal Substances 0.000 title claims description 68
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000002360 preparation method Methods 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 7
- 239000002019 doping agent Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- 238000001755 magnetron sputter deposition Methods 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000004050 hot filament vapor deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
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Priority Applications (1)
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CN2008101165561A CN101325225B (zh) | 2008-07-11 | 2008-07-11 | 一种提高晶硅太阳电池短波响应的发射极结构 |
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CN2008101165561A CN101325225B (zh) | 2008-07-11 | 2008-07-11 | 一种提高晶硅太阳电池短波响应的发射极结构 |
Publications (2)
Publication Number | Publication Date |
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CN101325225A true CN101325225A (zh) | 2008-12-17 |
CN101325225B CN101325225B (zh) | 2011-06-15 |
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CN2008101165561A Active CN101325225B (zh) | 2008-07-11 | 2008-07-11 | 一种提高晶硅太阳电池短波响应的发射极结构 |
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CN (1) | CN101325225B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101866961A (zh) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | 一种用于薄膜硅/晶体硅异质结太阳电池的陷光结构 |
CN103681936A (zh) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源(太仓)有限公司 | 一种晶体硅非晶硅层叠电池及其制造方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN111900233A (zh) * | 2020-08-12 | 2020-11-06 | 常州时创能源股份有限公司 | 非晶硅转印靶材的重复利用方法 |
CN114883451A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222975A (ja) * | 2001-01-29 | 2002-08-09 | Kyocera Corp | 薄膜結晶質Si太陽電池およびその製造方法 |
CN1180486C (zh) * | 2001-10-31 | 2004-12-15 | 四川大学 | 透明导电膜前电极晶体硅太阳能电池 |
CN1314134C (zh) * | 2004-07-15 | 2007-05-02 | 上海交通大学 | 硅薄膜异质结太阳电池的制备方法 |
CN100459177C (zh) * | 2005-09-02 | 2009-02-04 | 中国科学院研究生院 | 纳米晶硅/单晶硅异质结太阳能电池及其制备方法 |
CN101197399B (zh) * | 2007-12-26 | 2011-02-09 | 中国科学院电工研究所 | 一种薄膜硅/晶体硅背结太阳能电池 |
-
2008
- 2008-07-11 CN CN2008101165561A patent/CN101325225B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101866961A (zh) * | 2010-06-09 | 2010-10-20 | 中国科学院电工研究所 | 一种用于薄膜硅/晶体硅异质结太阳电池的陷光结构 |
CN103681936A (zh) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源(太仓)有限公司 | 一种晶体硅非晶硅层叠电池及其制造方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN111900233A (zh) * | 2020-08-12 | 2020-11-06 | 常州时创能源股份有限公司 | 非晶硅转印靶材的重复利用方法 |
CN114883451A (zh) * | 2022-05-25 | 2022-08-09 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
CN114883451B (zh) * | 2022-05-25 | 2023-09-29 | 中国科学院电工研究所 | 一种全背接触晶硅异质结太阳电池结构的制备方法 |
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Publication number | Publication date |
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CN101325225B (zh) | 2011-06-15 |
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Application publication date: 20081217 Assignee: Li Teng Hui Photovoltaic Technology Co.,Ltd. Assignor: INSTITUTE OF ELECTRICAL ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: 2014320010049 Denomination of invention: Emitter electrode structure capable of improving crystal silicon solar battery shortwave response Granted publication date: 20110615 License type: Exclusive License Record date: 20140418 |
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