CN101325155A - Mask and method for forming polycrystalline silicon layer using the same - Google Patents
Mask and method for forming polycrystalline silicon layer using the same Download PDFInfo
- Publication number
- CN101325155A CN101325155A CN 200810130124 CN200810130124A CN101325155A CN 101325155 A CN101325155 A CN 101325155A CN 200810130124 CN200810130124 CN 200810130124 CN 200810130124 A CN200810130124 A CN 200810130124A CN 101325155 A CN101325155 A CN 101325155A
- Authority
- CN
- China
- Prior art keywords
- shielding pattern
- transmissive slit
- little light
- trend
- bearing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
A mask comprises a main shading pattern and a plurality of groups of micro shading patterns. The main shading pattern is used for defining a plurality of strip light transmission slits, wherein the extension directions of the light transmission slits are substantially same. The plurality of groups of micro shading patterns are connected with the main shading pattern, each micro shading pattern is positioned inside one of the light transmission slits, each group of micro shading patterns comprises a plurality of shading patterns, and the extension direction of at least part of the micro shading patterns and the extension direction of light transmission slit form an included angle other than about 90 DEG.
Description
[technical field]
The invention relates to a kind of mask, and particularly relevant for a kind of mask that is used to form polysilicon layer.
[background technology]
In general assembly, all need deploy switch with driven unit.Display module with active driving is an example, and normally (Thin Film Transistor is TFT) as driving switch with thin-film transistor.Thin-film transistor can be divided into according to the material of channel layer amorphous silicon film transistor (amorphous silicon TFT) and low-temperature polysilicon film transistor (Low-Temperature PolySilicon Thin FilmTransistor, LTPS-TFT).Wherein, because low-temperature polysilicon film transistor has advantages such as the little and electron mobility of consumed power is big compared to amorphous silicon film transistor, therefore be subjected to the attention in market gradually.So the low-temperature polysilicon film crystallization technique is by extensive studies, wherein, (Sequential lateral solidification, SLS) the laser crystallization technology is the crystallization technique of present main flow research with continuously lateral curing.
Fig. 1 is the schematic diagram of existing a kind of continuously lateral solidifying laser crystallization apparatus.Please refer to Fig. 1, this continuously lateral solidifying laser crystallization apparatus 100 comprises LASER Light Source (not illustrating), optical system 110 and baseplate carrier 120.Wherein, be loaded with on the baseplate carrier 120 be formed with amorphous silicon layer (substrate 130 of the α that illustrates as Fig. 1-Si), and baseplate carrier 120 usually with the millimeter grade apart from translation substrate 130.At first, make laser beam 140 graphical via mask 112, and through amplifying or dwindling or the projection lens 114 of geometric ratio multiplying power and shine amorphous silicon layer on the substrate 130.Wherein, therefore the irradiation area of the slit limit laser bundle 140 of mask 112, can form the silicon of " fusion " attitude through the amorphous silicon layer of laser beam 140 irradiation, and still is solid-state without the amorphous silicon layer of laser radiation.The silicon of molten state can be that nucleus carries out side direction and grows up with the amorphous silicon layer, and then makes the amorphous silicon layer of irradiation area be transformed into polysilicon layer (p-Si that illustrates as Fig. 1).Then, along with the stepping of substrate 130 is moved, the silicon of molten state can carry out continuous side crystallization, has the periodically polysilicon layer of crystal grain arrangement with non-being transformed into through silicon layer with whole layer.Wherein, the zone of the pattern of mask 112 control side crystallization and the position of grain boundary (grain boundary), and closely bound up with the grain size and the crystalline quality of the polysilicon layer of gained.
Fig. 2 A is existing a kind of mask that is used for continuously lateral solidifying laser crystallization apparatus.Fig. 2 B carries out the partial schematic diagram of the formed polysilicon layer of lateral solidification laser crystallization processing procedure for the mask that uses Fig. 2 A.Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, mask 200 has a light-shielding pattern 210, with the transmissive slit 220 that defines a plurality of strips.Wherein, transmissive slit 220 is array to be arranged, and it is interlaced with each other but partly overlapping at column direction with the transmissive slit 220 that is arranged in odd-numbered line to be arranged in the transmissive slit 220 of even number line.Use this mask 200 carry out the formed polysilicon layer 250 of lateral solidification laser crystallization have many oikocrysts circle (primarygrain boundary or main grain boundary) PGB and with inferior crystal boundary (the secondary gain boundary or sub-grain boundary) SGB of oikocryst circle approximate vertical.Wherein, the carrier transport factor of the number of inferior crystal boundary SGB and polysilicon layer 250 (carrier mobility) is inversely proportional to.Therefore, when the sense of current in the channel region of polycrystalline SiTFT of flowing through is roughly vertical with oikocryst circle and when parallel with inferior crystal boundary, at this moment, polycrystalline SiTFT has higher carrier mobility.Yet when polysilicon layer was patterned as the channel region of thin-film transistor, if when the folded angle of the length direction of channel region and oikocryst circle is not quite similar in the different thin-film transistors, will there be very big difference in the electrical characteristics of these polycrystalline SiTFTs.
[summary of the invention]
The invention provides a kind of mask, comprise main light-shielding pattern and the little light-shielding pattern of many groups.
The invention provides a kind of method that forms polysilicon layer, make to have close electrical characteristics as a plurality of thin-film transistors of channel region, and can apply in the manufacture method of electronic installation with this polysilicon layer.
The present invention proposes a kind of mask, comprises a main light-shielding pattern and the little light-shielding pattern of many groups.Main light-shielding pattern is in order to define the transmissive slit of a plurality of strips, and wherein the bearing of trend of transmissive slit is identical in fact.The little light-shielding pattern of many groups is connected with main light-shielding pattern, and respectively organizing little light-shielding pattern lays respectively in one of them transmissive slit, wherein respectively organize little light-shielding pattern and comprise a plurality of little light-shielding patterns respectively, and be not about the angles of 90 degree to the bearing of trend folder one of the bearing of trend of the little light-shielding pattern of small part and transmissive slit.
The present invention proposes a kind of method that forms polysilicon layer in addition.At first, on a substrate, form an amorphous silicon layer.Then, provide a mask, mask comprises a main light-shielding pattern and the little light-shielding pattern of many groups.Main light-shielding pattern is in order to define the transmissive slit of a plurality of strips, and wherein the bearing of trend of transmissive slit is identical in fact.The little light-shielding pattern of many groups is connected with main light-shielding pattern, and respectively organizing little light-shielding pattern lays respectively in one of them transmissive slit, wherein respectively organize little light-shielding pattern and comprise a plurality of little light-shielding patterns respectively, and be not about the angles of 90 degree to the bearing of trend folder one of the bearing of trend of the little light-shielding pattern of small part and transmissive slit.Then, provide a laser, by the mask irradiated substrate.
In the present invention, mask comprises the little light-shielding patterns of many groups, and is not about 90 angles of spending to the bearing of trend folder one of the bearing of trend of the little light-shielding pattern of small part and transmissive slit.Therefore, use the formed polysilicon layer of this mask, inferior crystal boundary and the angle between oikocryst circle to small part are not about 90 degree, so, when this polysilicon layer is patterned as the channel region of thin-film transistor, even the folded angle of the length direction of channel region and oikocryst circle is not quite similar in the different thin-film transistors, these polycrystalline SiTFTs still can have consistent electrical characteristics.
For above and other objects of the present invention, feature and advantage can be become apparent, embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
[description of drawings]
Fig. 1 is the schematic diagram of existing a kind of continuously lateral solidifying laser crystallization apparatus.
Fig. 2 A is existing a kind of mask that is used for continuously lateral solidifying laser crystallization apparatus.
Fig. 2 B carries out the partial schematic diagram of the formed polysilicon layer of lateral solidification laser crystallization processing procedure for the mask that uses Fig. 2 A.
Fig. 3 is the schematic flow sheet according to the method for the formation polysilicon layer of one embodiment of the invention.
Fig. 4 A is the schematic diagram according to the mask of one embodiment of the invention.
Fig. 4 B is the schematic diagram according to the mask of one embodiment of the invention.
Fig. 4 C carries out the partial schematic diagram of the amorphous silicon layer of laser radiation for the mask that uses Fig. 4 A.
Fig. 4 D carries out the partial schematic diagram of the formed polysilicon layer of laser radiation for the mask that uses Fig. 4 A.
Fig. 5 A to Fig. 9 A is the schematic diagram according to one group of little light-shielding pattern in the mask of one embodiment of the invention, and Fig. 5 B to Fig. 9 B is to use the mask of Fig. 5 A to Fig. 9 A to carry out the partial schematic diagram of the formed polysilicon layer of laser radiation respectively.
[embodiment]
Fig. 3 is the schematic flow sheet according to the method for the formation polysilicon layer of one embodiment of the invention.
Please refer to Fig. 3, at first, carry out step S300, on substrate, form amorphous silicon layer.Then, for example be that the substrate that will be formed with amorphous silicon layer places on the baseplate carrier 120 of continuously lateral crystal laser crystallization apparatus as shown in Figure 1.Wherein, the material of substrate for example is inorganic transparent material (as: glass, quartz or other suitable material or above-mentioned combination), organic transparent material (as: polyalkenes, poly-Hai class, polyalcohols, polyesters, rubber, thermoplastic polymer, thermosetting polymer, poly aromatic hydro carbons, poly-methyl-prop vinegar acid methyl esters class, plastics, polycarbonate-based or other suitable material or above-mentioned derivative or above-mentioned combination) or above-mentioned combination.In the present embodiment, the material of substrate is to be example with glass, but the invention is not restricted to this.The method that forms amorphous silicon layer for example is chemical vapour deposition technique, ink-jet method, rubbing method, atomic layer deposition method (atomic layer deposited; ALD) or other suitable method.
Fig. 4 A is the schematic diagram according to the mask of one embodiment of the invention.Please then, carry out step S302 simultaneously with reference to Fig. 3 and Fig. 4 A, for example provide a mask 400 to continuously lateral crystal laser crystallization apparatus, mask 400 comprises a main light-shielding pattern 410 and the little light-shielding pattern 420 of many groups.The transmissive slit 412 of main light-shielding pattern 410 in order to define a plurality of strips, the bearing of trend of transmissive slit 412 is identical in fact.The little light-shielding pattern 420 of many groups is connected with main light-shielding pattern 410, and respectively organizes little light-shielding pattern 420 and lay respectively in the transmissive slit 412.Each is organized little light-shielding pattern 420 and comprises a plurality of little light-shielding patterns 422 respectively, and is not about angle theta 1, the θ 2 of 90 degree to the bearing of trend folder one of the bearing of trend of the little light-shielding pattern 422 of small part and transmissive slit 412.Must it should be noted that many groups of little light-shielding patterns 420 that Fig. 4 A is illustrated are that 4 row or 4 are classified example as, but the invention is not restricted to this, for instance, shown in Fig. 4 B, many groups of little light-shielding patterns 420 in the mask 400 also can be arranged in 2 row, in other words, organize the capable or M row of N in little light-shielding pattern 420 wherein at least one gets final product more than or equal to 2 more.
Please refer to Fig. 4 A, in the present embodiment, 412 one-tenth arrays of transmissive slit are arranged, the transmissive slit 412 that is arranged in the even number line is in alignment with each other on column direction, and the transmissive slit 412 that is arranged in the odd-numbered line is in alignment with each other on column direction, and the transmissive slit 412 that is arranged in the even number line is interlaced with each other on column direction with the transmissive slit 412 that is arranged in the odd-numbered line.It should be noted that, the transmissive slit 412 that is arranged in the even number line is not to stagger fully on column direction with the transmissive slit 412 that is arranged in the odd-numbered line, in other words, if with the position of 412 horizontal translations of the transmissive slit in the even number line, can find that both have partly overlapping areas to transmissive slit 412 places of odd-numbered line.Wherein, the width of transmissive slit 412 for example is between about 5 microns to about 100 microns, but the invention is not restricted to this.In other embodiment, the transmissive slit 412 that is arranged in the even number line can be in alignment with each other on column direction with the transmissive slit 412 that is arranged in the odd-numbered line.
Moreover in the present embodiment, each organizes little light-shielding pattern 420 can comprise 6 or little light-shielding pattern 422 of other quantity.Little light-shielding pattern 422 is an example to be strip, but is not limited thereto, and the width of little light-shielding pattern 422 changes along with the change of horizontal level.So the width of little light-shielding pattern 422 for example is between about 0.1 micron to about 10 microns, but the invention is not restricted to this.Wherein, the little light-shielding pattern 422 that is connected with each other is arranged in the class V-arrangement, and the V word opening of class V-arrangement is towards equidirectional.The bearing of trend of the bearing of trend of each little light-shielding pattern 422 and transmissive slit 412 presss from both sides an angle theta 1, θ 2, for example is about 45 degree, but the invention is not restricted to this.Bearing of trend that it should be noted that the little light-shielding pattern 422 that is positioned at same transmissive slit 412 for example is incomplete same.Moreover in other embodiments, the angle theta 1 of the bearing of trend of the bearing of trend of little light-shielding pattern 422 and transmissive slit 412 folder can be identical or different in fact with angle theta 2, and in addition, angle theta 1, θ 2 also can be the angles beyond 45 degree.
Please be simultaneously with reference to Fig. 3, Fig. 4 C and Fig. 4 D, Fig. 4 C is the partial schematic diagram that the mask of use Fig. 4 A carries out the amorphous silicon layer of laser radiation, Fig. 4 D carries out the partial schematic diagram of the formed polysilicon layer of laser for the mask that uses Fig. 4 A.Then, carry out step S304, a laser is provided,, make amorphous silicon layer 440 change polysilicon layer 500 into continuously lateral solidifying laser crystallization mode by mask 400 irradiated substrates.In detail, laser light exposes to amorphous silicon layer 440 by mask 400, and first area A1 is the zone that laser light shines by transmissive slit 412, is the silicon of " fusion " attitude, and second area A2 is solid-state amorphous silicon for being covered by main light-shielding pattern 410 not by the light-struck zone of laser.Wherein, the width T of first area A1 for example is greater than about 1.5 microns, is preferably between about 4.5 microns to about 6 microns; The length L of first area A1 is then different along with the size of mask 400.In the present embodiment, for example be more than or equal to about 1.5 microns apart from B between between with the first area A1 of delegation.Have an overlapping width S in different rows between the adjacent first area A1, overlapping width S for example is more than or equal to about 1.5 microns, is preferably about 2 microns.Wherein, for example be relation between width T, spacing B and the overlapping width S with B=T-2S.Therefore, part transmissive slit 412 between little light-shielding pattern 422 22 (can be described as opening, indicate) width and the part transmissive slit 412 between little light-shielding pattern 422 and main light-shielding pattern 410 (can be described as opening, indicate) width wherein at least one, preferably, in fact less than the optical resolution of the optical system 110 in the crystallization apparatus 100 (please refer to Fig. 1), with 1.5 microns be example, can obtain preferable polysilicon crystal form.But note that if the design of the number of little light-shielding pattern 422 is proper, also can ignore this optical resolution parameter.In addition, the part transmissive slit 412 that does not limit between little light-shielding pattern 422 22 (can be described as opening, indicate) shape and the shape of the part transmissive slit 412 between little light-shielding pattern 422 and main light-shielding pattern 410 (can be described as opening, sign).Therefore, the shape of this optical resolution parameter and opening is also optionally used or do not use to the mask design shown in the following icon.Yet the optical resolution of the optical system 110 in the crystallization apparatus 100 is different and difference to some extent the invention is not restricted to this according to various boards.
Please be simultaneously with reference to Fig. 4 A, Fig. 4 C and Fig. 4 D, owing to be arranged in transmissive slit 412 in the even number line in the mask 400 with to be arranged in transmissive slit 412 in the odd-numbered line interlaced with each other but non-ly stagger fully on column direction, therefore, along with the stepping of mask 400 is moved, amorphous silicon layer 440 is transformed into polysilicon layer 500 gradually, and wherein polysilicon has crystallite dimension G (shown in Fig. 4 C).In addition, owing to the shape and the arrangement mode of little light-shielding pattern 422 in the mask 400, make the crystal grain-growth direction of polysilicon layer 500 and oikocryst circle formation one not be about 90 angles of spending.That is to say that the oikocryst circle PGB of polysilicon layer 500 is not about 90 angles of spending with time crystal boundary SGB folder one.So when this polysilicon layer 500 was patterned as the channel region of thin-film transistor, even the folded angle of the length direction of channel region and oikocryst circle PGB is not quite similar in the different thin-film transistor, these polycrystalline SiTFTs still can have the electrical characteristics of unanimity.In addition, in the present embodiment, it is to be example for 5 times with the original pattern size of dwindling the little light-shielding pattern 422 on the mask 400 that little light-shielding pattern 422 of mask 400 is projeced into pattern dimension on the non-polysilicon 440, but the invention is not restricted to this numerical value.In other words, in other embodiments, according to the grain size of needed polysilicon, little light-shielding pattern 422 of mask 400 can be projeced into pattern dimension on the non-polysilicon be adjusted to equal proportion in the original pattern size of the little light-shielding pattern 422 on the mask 400, dwindle original pattern size, amplify the two combination of the original pattern size of the little light-shielding pattern 422 on mask 400 or above-mentioned in the little light-shielding pattern 422 on the mask 400.
In the above-described embodiment, the structure of mask 400 is to be example with the structure that Fig. 4 A is illustrated, yet the invention is not restricted to this, and the little light-shielding pattern of each in the mask also can be the pattern that any one illustrated among Fig. 5 A to Fig. 9 A, is described in detail as follows.In addition, any one among little light-shielding pattern 422 of being illustrated of Fig. 4 A to Fig. 9 A, 422a, 422b, 422c, 422d, the 422e also can be used in same group of little light-shielding pattern.
Fig. 5 A to Fig. 9 A is the schematic diagram according to one group of little light-shielding pattern in the mask of one embodiment of the invention, and Fig. 5 B to Fig. 9 B is to use the mask of Fig. 5 A to Fig. 9 A to carry out the partial schematic diagram of the formed polysilicon layer of laser radiation respectively.
Please be simultaneously with reference to Fig. 5 A and Fig. 5 B, in the present embodiment, little light-shielding pattern 422a is similar to little light-shielding pattern 422 of Fig. 4 A, however in the present embodiment, the little light-shielding pattern 422a that is connected with each other is arranged in the class parallelogram.Wherein, the bearing of trend of the bearing of trend of little light-shielding pattern 422a and transmissive slit 412a presss from both sides an angle theta, for example is about 45 degree, but the invention is not restricted to this.And adopt the oikocryst circle PGB among the formed polysilicon layer 500a of this mask 400a not to be about 90 angles of spending with time crystal boundary SGB folder one.
Please be simultaneously with reference to Fig. 6 A and Fig. 6 B, in the present embodiment, little light-shielding pattern 422b is similar to little light-shielding pattern 422 of Fig. 4 A, yet, in the present embodiment, the little light-shielding pattern 422b that is connected with each other is arranged in the class V-arrangement, and the V word opening of adjacent class V-arrangement is towards different directions.Wherein, the bearing of trend of the bearing of trend of little light-shielding pattern 422b and transmissive slit 412b presss from both sides an angle theta, for example is about 45 degree, but the invention is not restricted to this.And adopt the oikocryst circle PGB among the formed polysilicon layer 500b of this mask 400b not to be about 90 angles of spending with time crystal boundary SGB folder one.
Please be simultaneously with reference to Fig. 7 A and Fig. 7 B, in the present embodiment, little light-shielding pattern 422c is similar to little light-shielding pattern 422 of Fig. 4 A, however in the present embodiment, the little light-shielding pattern 422c that is connected with each other arranges in point-symmetric mode.Wherein, the bearing of trend of the bearing of trend of little light-shielding pattern 422c and transmissive slit 412c presss from both sides an angle theta, for example is about 45 degree, but the invention is not restricted to this.And adopt the oikocryst circle PGB among the formed polysilicon layer 500c of this mask 400c not to be about 90 angles of spending with time crystal boundary SGB folder one.
Please be simultaneously with reference to Fig. 8 A and Fig. 8 B, in the present embodiment, little light-shielding pattern 422d is strip, and it has a fixed width, but the invention is not restricted to this.In other words, in other embodiment, the width that is little light-shielding pattern 422d of strip can gradually wide, gradually narrow, local wide, local narrow or above-mentioned combination.Wherein, the bearing of trend of the little light-shielding pattern 422d of some and the bearing of trend of transmissive slit 412d press from both sides the angle theta of about 90 degree ', and have at least the bearing of trend of a part of little light-shielding pattern 422d and the bearing of trend folder one of transmissive slit 412d not to be about 90 angles 0 of spending, for example be about 45 degree, but the invention is not restricted to this.It should be noted that, adopt among the formed polysilicon layer 500d of this mask 400d, inferior crystal boundary SGB of some and oikocryst circle PGB folder one are similar to the angle of 90 degree, but, have the oikocryst circle PGB of a part and the angle that time crystal boundary SGB folder one is not about 90 degree at least.
Please be simultaneously with reference to Fig. 9 A and Fig. 9 B, in the present embodiment, little light-shielding pattern 422e is similar to little light-shielding pattern 422d of Fig. 8 A.Wherein, the bearing of trend of the little light-shielding pattern 422e of some and the bearing of trend of transmissive slit 412e press from both sides the angle theta of about 90 degree ', and have at least the bearing of trend of a part of little light-shielding pattern 422e and the bearing of trend folder one of transmissive slit 412e not to be about 90 angle theta of spending, for example be about 45 degree, but the invention is not restricted to this.In addition, in the present embodiment, the little light-shielding pattern 422e of some is strip, and it has a fixed width, but the invention is not restricted to this.In other words, in other embodiment, the width that is little light-shielding pattern 422e of strip can gradually wide, gradually narrow, local wide, local narrow or above-mentioned combination.It should be noted that, adopt among the formed polysilicon layer 500e of this mask 400e, inferior crystal boundary SGB of some and oikocryst circle PGB folder one are similar to the angle of 90 degree, but, have the oikocryst circle PGB of a part and the angle that time crystal boundary SGB folder one is not about 90 degree at least.
What deserves to be mentioned is, in the above-described embodiment, all be that bearing of trend with the bearing of trend of little light-shielding pattern and transmissive slit presss from both sides about 45 degree or about 90 degree are example, yet the invention is not restricted to this, the bearing of trend of little light-shielding pattern also can accompany other angle with the bearing of trend of transmissive slit.In addition, in the processing procedure that forms polysilicon layer, the amorphous silicon layer of zones of different can use the mask with different little light-shielding patterns to carry out laser radiation, and the existing mask of also can arranging in pairs or groups uses, and makes formed polysilicon layer have different crystal boundaries in zones of different and arranges kenel.
In the above-described embodiment, mask comprises the little light-shielding patterns of many groups, and is not about 90 angles of spending to the bearing of trend folder one of the bearing of trend of the little light-shielding pattern of small part and transmissive slit.Therefore, adopt this mask to carry out the formed polysilicon layer of laser, be not about 90 degree to the inferior crystal boundary of small part and the angle between oikocryst circle.So when this polysilicon layer was patterned as the channel region of thin-film transistor, even the folded angle of the length direction of channel region and oikocryst circle is not quite similar in the different thin-film transistor, these polycrystalline SiTFTs still can have the electrical characteristics of unanimity.Therefore, adopt the display module of these polycrystalline SiTFTs to have the excellent electrical property quality.Therefore, the transistor that utilizes the above embodiment of the present invention to manufacture can be used in various self-luminouss or non-self luminous display floater and the electronic installation.And the manufacture method of various self-luminouss or non-self luminous display floater and electronic installation, also comprise the transistor that the described manufacture method of the above embodiment of the present invention manufactures.Wherein, electronic installation more comprises at least one electronic building brick and is electrically connected at display floater, and electronic building brick comprises as control assembly, operating assembly, processing components, input module, memory element, driven unit, luminescence component, protection assembly, sensing component, detection components or other functional unit or aforesaid combination.And the type of electronic installation comprises the panel in portable product (as mobile phone, video camera, camera, mobile computer, game machine, wrist-watch, music player, electronic mail transceiver, map navigator, digital photo or similar products like), video and audio product (as audio-visual projector or similar products like), screen, TV, outdoor/indoor billboard, the projector etc.In addition, the transistor function of utilizing the above embodiment of the present invention to manufacture comprises: drive function, handoff functionality, function switching signal, measuring ability, inducing function, transform light energy function, touch controllable function, read functions or other suitable function.
Though the present invention discloses as above with embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (13)
1. mask comprises:
One main light-shielding pattern, in order to define the transmissive slit of a plurality of strips, the bearing of trend of wherein said transmissive slit is identical in fact; And
The little light-shielding pattern of many groups, be connected with this main light-shielding pattern, and respectively organizing little light-shielding pattern lays respectively in one of them transmissive slit, wherein respectively organize little light-shielding pattern and comprise a plurality of little light-shielding patterns respectively, and be not about the angles of 90 degree to the bearing of trend folder one of the bearing of trend of the described little light-shielding pattern of small part and described transmissive slit.
2. mask according to claim 1, it is characterized in that, described transmissive slit becomes array to arrange, the described transmissive slit that is arranged in the even number line is in alignment with each other on column direction, and the described transmissive slit that is arranged in the odd-numbered line is in alignment with each other on column direction, and the described transmissive slit of arranging in the even number line odd-numbered line is interlaced with each other on column direction.
3. mask according to claim 1 is characterized in that, respectively the width of this transmissive slit is between about 5 microns to about 100 microns.
4. mask according to claim 1 is characterized in that, respectively this little light-shielding pattern width be between about 0.1 micron to about 10 microns.
5. mask according to claim 1 is characterized in that, presss from both sides the angles of about 45 degree to the bearing of trend of the bearing of trend of the described little light-shielding pattern of small part and described transmissive slit.
6. mask according to claim 1 is characterized in that, this bearing of trend of described little light-shielding pattern that is positioned at same transmissive slit is incomplete same.
7. method that forms polysilicon layer comprises:
On a substrate, form an amorphous silicon layer;
One mask is provided, and this mask comprises:
One main light-shielding pattern, in order to define the transmissive slit of a plurality of strips, the bearing of trend of wherein said transmissive slit is identical in fact; And
The little light-shielding pattern of many groups, be connected with this main light-shielding pattern, and respectively organizing little light-shielding pattern lays respectively in one of them transmissive slit, wherein respectively organize little light-shielding pattern and comprise a plurality of little light-shielding patterns respectively, and be not about the angles of 90 degree to the bearing of trend folder one of the bearing of trend of the described little light-shielding pattern of small part and described transmissive slit; And
One laser is provided, shines this substrate by this mask.
8. the method for formation polysilicon layer according to claim 7, it is characterized in that, described transmissive slit becomes array to arrange, the described transmissive slit that is arranged in the even number line is in alignment with each other on column direction, and the described transmissive slit that is arranged in the odd-numbered line is in alignment with each other on column direction, and the described transmissive slit of arranging in the even number line odd-numbered line is interlaced with each other on column direction.
9. the method for formation polysilicon layer according to claim 7 is characterized in that, respectively the width of this transmissive slit is between about 5 microns to about 100 microns.
10. the method for formation polysilicon layer according to claim 7 is characterized in that, respectively this little light-shielding pattern width be between about 0.1 micron to about 10 microns.
11. the method for formation polysilicon layer according to claim 7 is characterized in that, presss from both sides the angles of about 45 degree to the bearing of trend of the bearing of trend of the described little light-shielding pattern of small part and described transmissive slit.
12. the method for formation polysilicon layer according to claim 7 is characterized in that, this bearing of trend of described little light-shielding pattern that is positioned at same transmissive slit is incomplete same.
13. the manufacture method of an electronic installation comprises the method for formation polysilicon layer according to claim 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810130124 CN100570824C (en) | 2008-07-24 | 2008-07-24 | Mask and the method for using its formation polysilicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810130124 CN100570824C (en) | 2008-07-24 | 2008-07-24 | Mask and the method for using its formation polysilicon layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101325155A true CN101325155A (en) | 2008-12-17 |
| CN100570824C CN100570824C (en) | 2009-12-16 |
Family
ID=40188616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200810130124 Active CN100570824C (en) | 2008-07-24 | 2008-07-24 | Mask and the method for using its formation polysilicon layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100570824C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246158A (en) * | 2012-02-14 | 2013-08-14 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
| CN104538402A (en) * | 2014-12-30 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
-
2008
- 2008-07-24 CN CN 200810130124 patent/CN100570824C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103246158A (en) * | 2012-02-14 | 2013-08-14 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
| CN103246158B (en) * | 2012-02-14 | 2015-03-25 | 旺宏电子股份有限公司 | Mask as well as pattern collocation method and exposure method thereof |
| CN104538402A (en) * | 2014-12-30 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| CN104538402B (en) * | 2014-12-30 | 2018-01-23 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100570824C (en) | 2009-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102878496B (en) | Backlight apparatus and display device | |
| CN102183860B (en) | Pixel array substrate display panel | |
| US7425734B2 (en) | Thin-film transistor array with ring geometry | |
| TW201833646A (en) | Display device, display module, and electronic device | |
| TW510983B (en) | Display device and semiconductor device having laser annealed semiconductor elements | |
| Wager et al. | Thin, fast, and flexible | |
| CN106292103A (en) | A kind of array base palte and preparation method thereof, display floater, display device | |
| CN104865726A (en) | Array substrate, display panel, display device and preparation method | |
| US20050271952A1 (en) | Laser beam pattern mask and crystallization method using the same | |
| US20210098558A1 (en) | Electronic device | |
| US20190393244A1 (en) | Array substrate and manufacturing method thereof, display panel and driving method thereof, and display device | |
| KR20190100230A (en) | Display device and its manufacturing method | |
| CN100570824C (en) | Mask and the method for using its formation polysilicon layer | |
| CN205944093U (en) | Array substrate and display device | |
| US20070273778A1 (en) | Photo sensing display apparatus and display panel thereof | |
| US20210304641A1 (en) | Large rollable display device and method for manufacturing same | |
| TW202204995A (en) | Semiconductor device and method for producing semiconductor device | |
| JPWO2010032519A1 (en) | Mother board, manufacturing method thereof, and device board | |
| CN102150273A (en) | Display panel and display device using the same | |
| CN100507655C (en) | Liquid crystal display device and its manufacturing method | |
| CN101202218B (en) | Mask applied for continuous side direction long crystal technique and laser crystalization method | |
| US7871907B2 (en) | Mask and method of fabricating a polysilicon layer using the same | |
| CN102468453B (en) | Laser crystallization system and the method using this system manufacture display device | |
| CN106711157B (en) | The production method of LTPS array substrate | |
| CN101256319A (en) | Liquid crystal device and electronic apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |