CN101317277A - Electronic parts packages - Google Patents

Abstract

The present invention relates to an electronic part package capable of effectively radiating heat. A heat radiating member is buried below the mounting region of the light emitting device of the substrate so as to be separated from the mounting region of the light emitting device in a vertical direction, and is exposed to the lower surface of the substrate. A heat transfer member, which has thermal conductivity higher than that of the substrate, is formed between the mounting region of the light emitting device and the heat radiating member. Accordingly, since the substrate includes an effective heat radiating structure, it is possible to quickly radiate heat generated form the light emitting device.

Description

Electronic part package

Technical field

The present invention relates to electronic part package, relate more specifically to the outwards electronic part package of efficiently radiates heat.

Background technology

Light-emitting diode (being called as LED hereinafter) is the semiconductor device that different colours can be provided.The light emitting source of LED is formed by the different compound semiconductor materials such as GaAs, AlGaAs, GaN, InGaN and AlGaInP.At present, semiconductor device has been widely used in the electronic component of packing forms.

Generally speaking, be used for determining that the standard of LED device performance is the strength range of color, brightness and brightness.The performance of LED device is determined by the compound semiconductor materials that uses in the LED device.In addition, performance is subjected to the appreciable impact of chip encapsulating structure mounted thereto.

Common lamp type LED encapsulation and surface mounting LED encapsulation are shown among Fig. 1.

Comprise two lead frame 3a and 3b in the encapsulation of the lamp type LED shown in Figure 1A 10.Having cup-shaped surface of metal electrode is formed on the lead frame 3b.LED device 5 is installed in the top of lead frame 3b.Lamp type LED encapsulation 10 encapsulates by the hemispherical Shell 7 that is become by transparent molded resin-shaped.

Simultaneously, the surface mounting LED encapsulation 20 that is illustrated among Figure 1B provides the packaging body 11 that is formed by molded epoxy resin.Packaging body 11 comprises the cavity with predetermined inclination.This cavity is formed on LED device 15 and will be installed in the corresponding zone, installation region of luminescent device wherein.LED device 15 is installed in the installation region of luminescent device of packaging body 11.LED device 15 13 is connected to the pattern electrode (not shown) by going between.

In lamp type LED encapsulation 10, hemispherical Shell 7 is used as lens with the control Luminance Distribution.Especially, depend on the shape of shell 7, Luminance Distribution control can be narrowed down.If Luminance Distribution control is narrowed down, then can increase brightness at a predetermined angle.In addition, because the light of launching from light emitting source is reflected at surface of metal electrode, so can increase brightness.

Simultaneously, in surface mounting LED encapsulation 20, Luminance Distribution is owing to encapsulation broadens, and brightness is low.As mentioned above, brightness and Luminance Distribution are influenced by encapsulating structure significantly.If high output LED device is used to increase the brightness of the surface mounting LED encapsulation of using moulded resin, then heat dissipation capacity is owing to the low-down thermal conductivity of moulded resin increases, thereby negative effect encapsulates.When height output LED device is installed in the encapsulation when increasing brightness, thermal conductivity is than the substrate of the high ceramic bases of the thermal conductivity of moulded resin as encapsulation.

Yet in the LED encapsulation of using ceramic bases, the surface mounting LED encapsulation as using moulded resin is difficult to control brightness and Luminance Distribution.That is, can not be applied to ceramic bases owing to the character of ceramic substrate material such as resin molded injection molding process.By using punching course, lamination process or working angles to form ceramic bases.Usually, because the installation region of the luminescent device of ceramic bases forms by punching press so that have flute profile, so be difficult to form the side of the installation region of luminescent device with predetermined angle of reflection.To provide explanation with reference to figure 2 about this.

Fig. 2 A is the viewgraph of cross-section that is encapsulated by the known LED that ceramic bases forms.LED encapsulation 30 is formed by two ceramic bases 21 and 22.In the ceramic bases 21 and 22 each has a plurality of potsherds by the structure of lamination.The ceramic bases 21 that is arranged on LED encapsulation downside has LED device 25 installation region mounted thereto thereon on the surface.Extend to the lower surface of encapsulation from the installation region by the both sides of LED encapsulation by 27 electrodes 23 that are connected to LED device 25 that go between.The ceramic bases 22 that is arranged on the upside of LED encapsulation comprises that predetermined cavity is to surround the installation region of LED device 25.

Relevant therewith, because the cavity of the installation region of LED device 25 forms by using punching course or working angles, so as shown in the figure, the cross section of cavity always is vertically formed.Because above-mentioned feature, because different with the encapsulation that is formed by moulded resin, the cross section of cavity is vertically formed, so there is the problem that can not form fabulous reflectance coating.

As a result, in the LED encapsulation of using ceramic bases, have only, just can adjust by the area in control LED device mounting zone and the substrate level of formation LED package wall.Therefore, be difficult to make LED encapsulation with the brightness that can satisfy user's different needs and angular brightness distribution.

Yet ceramic bases is being better than the moulded resin substrate aspect thermal conductivity and the heat radiation.Therefore, has the ceramic bases of good thermal conductivity and heat radiation in the prior art as the substrate that encapsulates.In addition, introduced the LED semiconductor packages shown in Fig. 2 B to solve difficulty by caused adjustment brightness of the vertical stratification that must form and angular brightness distribution because of manufacturing process.

At present, because the LED encapsulation requires high brightness and high power, power consumption increases.When the power of LED device increased, the heat that is produced from the LED device also increased.Along with heat increases, it is very important effectively distributing the heat that produces from the LED device.Therefore, heat is being transmitted to from the LED device during the last part of its heat radiation, it is most important reducing thermal resistance.

The method that improves the thermal conductivity of encapsulating material can be used to reduce thermal resistance.In correlation technique, substrate is by plastics (thermal conductivity with about 0.3W/mK), LTCC (thermal conductivity with about 4W/mK) or Al ₂O ₃(thermal conductivity with about 20W/mK) etc. made.Yet, use such as the ceramic material of AlN and substitute the material of following substrate shown in Fig. 2 B and last substrate 21 and 22 to improve the thermal conductivity of encapsulating material.Because AlN has fabulous thermal conductivity and intensity, so can use the material of AlN as the LED encapsulation.Yet when substrate was made by AlN, substrate was very expensive and be difficult to suitably form the required inclination angle of light in the control LED encapsulation.

As shown in Figure 3, substrate 21 and 22 can be by LTCC or Al ₂O ₃Make, and substrate 21 forms fin 29 to reduce thermal resistance under can running through.

Summary of the invention

Technical problem

According to structure shown in Figure 3, when coming in conjunction with LED device 25 with the form of flip-chip, can not anode 23a and negative electrode 23b is insulated from each other.For this reason, can not use flip-chip.According to structure shown in Figure 3, LED device 25 is carried out combination of Ag epoxy resin or eutectic bond, and can directly be dispersed into heat sink (not shown) by fin 29 from the heat that LED device 25 produced.Yet because the Ag epoxy resin that uses in the combination of Ag epoxy resin has low thermal conductivity, radiating efficiency descends.In addition, the flatness of the coating (being the coating between LED device 25 and the fin 29) of LED encapsulation should be adjusted into below the 5 μ m to carry out eutectic bond.Under the situation of eutectic bond, the metal level of being made by AuSn etc. that is used to weld is formed on the lower surface of LED device 25.In this case, when the flatness of LED encapsulation when 5 μ m are above, eutectic bond is carried out partly.For this reason, can not suitably conduct heat.

According to structure shown in Figure 3, under combination of Ag epoxy resin and eutectic bond both of these case, the difference of the thermal coefficient of expansion between LED device 25 and the fin 29 is big.For this reason, when encapsulation operation, the temperature of LED device 25 rises to 120 ℃, and it is a junction temperature.When LED device 25 disconnected, temperature became normal temperature.Normal temperature may be-40 ℃ in winter.Because the temperature difference, the combination interface between LED device 25 and the fin 29 can not bear LED device 25 and have the thermal stress that is produced between the fin 29 of big relatively thermal coefficient of expansion.Therefore, break, thereby LED device 25 is separated at combination interface.In addition, because thermal resistance increases owing to breaking, so the thermal resistance of whole encapsulation increases.Because LED device 25 is owing to the increase of thermal resistance worsens, so the brightness of LED device 25 reduces.As a result, the reliability of LED encapsulation worsens.In addition, when fin 29 was inserted in the encapsulation, fin 29 tilted because of the fit tolerance that metal inserts.Because this reason, when LED device 25 was carried out eutectic bond, the amount of defective increased.In addition, even suitably carry out combination, LED device 25 also can tilt.Therefore, the change of light direction takes place in LED device 25.

In other words, when carrying out eutectic bond when being attached to LED device 25 on the fin 29, carry out backflow by package temperature being risen to 350 ℃.During refluxing, because the thermal expansion of fin 29 has only the two ends of LED device 25 on its lower surface by combination once in a while.In this case, heat does not give out from whole LED device 25, but heat is only conducted by the part that is attached to LED encapsulated LED device by eutectic bond.Because this reason, can not make the maximum effect of eutectic bond.

Fig. 4 illustrates the LED device that comprises 1W under the thermal conductivity of 3W/mK and 25W/mK and does not have LED encapsulation (ceramic packaging) (seeing Fig. 2 B) of fin (for example Cu sheet) and comprise having and run through the form that the LED of the LED device of the 1W of the fin of substrate down encapsulates the analog result of (see figure 3).

Fig. 5 illustrates the LED device that comprises 3W under the thermal conductivity of 3W/mK and 25W/mK and does not have LED encapsulation (ceramic packaging) (seeing Fig. 2 B) of fin (for example Cu sheet) and comprise having and run through the form that the LED of the LED device of the 1W of the fin of substrate down encapsulates the analog result of (see figure 3).

In Fig. 4 and Fig. 5, refer to the P-N junction temperature of LED device 25 in conjunction with temperature.The temperature of metal PCB is that metal PCB (is that the LED package surface is installed to the PCB on it; Not shown) in temperature.The heating panel (not shown) is provided on the lower surface of metal PCB (not shown).

With reference to figure 4 and analog result shown in Figure 5, be appreciated that the LED encapsulation (see figure 3) with the fin that runs through following substrate is fabulous.

Yet the problem that LED shown in Figure 3 encapsulation has is the aforesaid eutectic bond of carrying out inadequately, and perhaps the LED device is because thermal coefficient of expansion poor and separated.

In addition, very big possibility is that the application trend of LED encapsulation is with " the simple pointer of electronic device

The photoflash lamp of mobile phone Indirect lighting device/backlight unit of LCD TV

Direct luminaire " order carry out.Therefore, the power consumption of LED encapsulation is tending towards continuous increase.

When considering application trend, single LED encapsulation can not be satisfied the needs in market.Therefore, need exploitation array type LED encapsulation, so that satisfy high brightness.

Yet because array type LED encapsulation has the structure that wherein a plurality of LED devices are integrated, it is very important that the heat how effectively a plurality of LED devices to be produced is dispersed into the outside.In addition, because a plurality of LED device is integrated, so there is following problems: the static, surge and the noise that are connected in the circuit of led chip effectively should be removed.

Especially, because a plurality of LED device is arranged in the array type LED encapsulation, so array type LED encapsulation is dimensionally greater than single LED encapsulation.In addition, because array type LED encapsulation also comprises noise removing circuit, so there is following problems: array type LED encapsulation encapsulates greater than single LED owing to the installation of optional feature.

The present invention is used to address the above problem, and the purpose of this invention is to provide the electronic part package that can effectively heat be dispersed into the outside.

Another object of the present invention provides the electronic part package that can improve optical efficiency.

Technical scheme

To achieve these goals, according to embodiments of the invention, electronic part package comprises: luminescent device; Substrate, it has luminescent device luminescent device installation region mounted thereto; And thermal component, it is embedded under the luminescent device installation region of substrate, so that separate with the luminescent device installation region in vertical direction, and is exposed to the lower surface of substrate.

In said structure, heat transfer component is formed between luminescent device installation region and the thermal component.In addition, heat transfer component has the thermal conductivity higher than the thermal conductivity of substrate.

In said structure, heat transfer component forms in vertical direction so that have cross sectional dimensions more than or equal to the luminescent device cross sectional dimensions.Alternatively, heat transfer component can form in vertical direction so that have cross sectional dimensions greater than the luminescent device surface area, and is divided into a plurality of zones.In addition, below luminescent device, can provide the zone of having in a plurality of zones greater than the diameter of luminescent device size.

Heat transfer component can be formed by ceramic lamella.

In addition, substrate comprises the cavity around the luminescent device installation region, and reflector is formed on the inner surface of cavity.In addition, reflector is connected at least one in the pattern electrode that forms in the substrate, and pattern electrode is electrically connected to luminescent device.The pattern electrode that forms in the pattern electrode that is connected with reflector and the luminescent device installation region separates.

Said structure also comprises: the rheostat material layer, and it is formed in the substrate; Electrode in first and second, it is formed in the substrate, and partly overlapping each other in rheostat material layer insertion mode therebetween; And first and second external electrodes, it is provided in the substrate so that be separated from each other.The first external electrode is electrically connected to electrode in first, and the second external electrode is electrically connected to the second inner electrode.

Beneficial effect

According to the present invention, because ceramic bases has effective radiator structure, so the heat that produces from the LED device can be dispersed into the outside effectively.As a result, can stably operate the LED device.

Because the thermal conductivity of substrate increases so that has reduced the LED device and from the thermal resistance between the last part of its loses heat, so the heat that produces from the LED device promptly can be dispersed into the outside.

Because can guarantee the surface flatness of substrate, so can carry out flip-chip combination or eutectic bond.

Because a plurality of LED devices are arranged in the substrate, and the heating panel that is made of metal is attached to the lower surface of substrate, so can obtain high brightness and effectively carry out heat radiation.

Because the semiconductor device that is used for removing static and surge is embedded in substrate or is surface mounted in substrate with the circuit that is used to remove noise, so can farthest utilize the space of encapsulation.Therefore, can provide the electronic part package that can farthest reduce its size and remove static and noise effectively.

Description of drawings

Fig. 1 is the view that the LED encapsulating structure of correlation technique is shown;

Fig. 2 and 3 is viewgraph of cross-section that the LED of the use ceramic bases of correlation technique encapsulates;

Figure 4 and 5 are forms that the analog result that the LED encapsulation shown in Fig. 2 B and LED shown in Figure 3 encapsulate is shown.

Fig. 6 is the viewgraph of cross-section according to the electronic part package of the first embodiment of the present invention;

Fig. 7 is the viewgraph of cross-section of electronic part package according to a second embodiment of the present invention;

Fig. 8 is the viewgraph of cross-section of the electronic part package of a third embodiment in accordance with the invention;

Fig. 9 is the viewgraph of cross-section of the electronic part package of a fourth embodiment in accordance with the invention;

Figure 10 is the plane graph of the example of diagram interior electrode shown in Figure 9;

Figure 11 is the plane graph of another example of diagram interior electrode shown in Figure 9;

Figure 12 is the viewgraph of cross-section of electronic part package according to a fifth embodiment of the invention;

Figure 13 is the view of the problem of the electronic part package shown in the pictorial image 6 to 8;

Figure 14 is the viewgraph of cross-section of electronic part package according to a sixth embodiment of the invention;

Figure 15 is the viewgraph of cross-section of electronic part package according to a seventh embodiment of the invention;

Figure 16 is the viewgraph of cross-section according to the electronic part package of the eighth embodiment of the present invention;

Figure 17 is the form that the analog result of electronic part package shown in Figure 14 and electronic part package shown in Figure 15 is shown;

Figure 18 is the equivalent circuit diagram according to the electronic part package of arranging of arbitrary embodiment of the present invention;

Figure 19 is the plane graph according to the electronic part package of arranging of arbitrary embodiment of the present invention;

Figure 20 is the view that the LED device spread geometry of modification shown in Figure 19 is shown;

Figure 21 illustrates the cross-sectional view of arranging the part of three LED devices among Figure 19;

Figure 22 is the view of the modification of metal tab shown in Figure 21; And

Figure 23 is the view of the method for circuit pattern in diagram forms.

Embodiment

Hereinafter, according to a preferred embodiment of the invention electronic part package is described with reference to the accompanying drawings.Use the semiconductor packages that is the LED encapsulation of light-emitting diode to be described below as the most preferred embodiment of electronic part package.

(first embodiment)

Fig. 6 is the viewgraph of cross-section according to the LED encapsulation of the first embodiment of the present invention.

LED encapsulation shown in Figure 6 comprises: chip-type LED device 32; Following ceramic bases 35, LED device 32 is mounted thereto; Last ceramic bases 40, it is arranged on down on the ceramic bases 35, and comprises the cavity with reservation shape being installed in wherein the regional corresponding zone with LED device 32; Pattern electrode 34 and 36, it is formed on down on the ceramic bases 35; And reflecting plate 44 (can be called as reflectance coating), it is provided on the inner surface of the cavity that forms in the ceramic bases 40, so that surrounds LED device 32.The projection 44a that is suspended on ceramic bases 40 upper ends is formed on the upper end of reflecting plate 44.

As long as LED device 32 can be installed in the substrate thick and fast, following ceramic bases 35 can be any substrate.For example, following ceramic bases 35 can be made by aluminium oxide, quartz, calcium zirconate, forsterite, SiC, graphite, vitreous silica, mullite, cordierite, zirconia, beryllium oxide, aluminium nitride, LTCC (LTCC) etc.The material of following ceramic bases 35 is not limited to certain material.Following ceramic bases 35 is formed by a potsherd among Fig. 6 (green sheet), but in fact can form by a plurality of potsherds of lamination.

Last ceramic bases 40 also can be by making with following ceramic bases 35 identical materials.

As shown in Figure 6, the projection 44a of reflecting plate 44 is suspended on the upper surface of ceramic bases 40 to a certain extent.The reason of doing like this is to enlarge the area that is exposed to outside projection 44a, so that improve radiating effect.Projection 44a can form with the shape of the entire upper surface that covers ceramic bases 40.As mentioned above, consider the shape of radiating effect and packaging body, can revise the shape of projection 44a with different modes.In addition, obviously, above-mentioned modification falls within the scope of the present invention.

Said reflection plate 44 can be as the device that effectively distributes the heat that is produced from LED device 32 by projection 44a.

Cavity with predetermined leaning angle (10 to 45 ° angle for example, it need be easy to heat radiation) is gone up at the lower surface of ceramic bases 35 (promptly with the corresponding part in LED device mounting zone) down and is formed.Formed cavity can have different shapes on the lower surface of following ceramic bases 35.Preferably the shape with tapered cylinder forms cavity.

A plurality of heat radiation through hole 50a, 50b and 50c are formed on down between the cavity that forms on the lower surface of the luminescent device installation region that forms on the upper surface of ceramic bases 35 and following ceramic bases 35.A plurality of heat radiation through hole 50a, 50b form with vertical direction with 50c and are separated from each other.The heat transfer component of being made by fin 38 (being 38a, 38b and 38c) is filled among a plurality of heat radiation through hole 50a, 50b and the 50c.

A plurality of heat radiation through hole 50a, 50b and 50c can be formed to have circular, tetragonal or polygonal cross section.

Though the number of heat radiation through hole 50a, 50b and 50c is 3 in Fig. 6, the number of the through hole that dispels the heat can be more than 3, and is integrated into a hole.Heat radiation through hole 50b has the diameter more than or equal to the size of LED device 32 in the middle of among a plurality of heat radiation through hole 50a, 50b and the 50c.

Because the heat that is produced from LED device 32 at first and mainly is transmitted to the position of heat radiation through hole 50b, so have the below that is formed on LED device 32 more than or equal to the heat radiation through hole 50b of the diameter of the size of LED device 32.If the heat that is produced from LED device 32 effectively is not dispersed into the outside, then the temperature of LED device 32 increases, and it causes that LED device 32 worsens.Therefore, luminous efficiency reduces, thereby causes the lost of life of LED device.For this reason, heat radiation through hole 50b is formed on the below of LED device 32 so that heat radiation rapidly.Among heat radiation through hole 50a and the 50c each can have the diameter of the size that is greater than or less than LED device 32.

For example, when arranging a plurality of LED device 32, heat radiation through hole 50b and heat transfer component 38b are formed on the below of each LED device 32.In addition, heat radiation through hole 50a and 50c and heat transfer component 38a and 38c be provided at heat radiation through hole 50b and heat transfer component 38b around, the feasible heat that each produced from LED device 32 promptly is dispersed into the outside.

Pattern electrode 34 and 36 is made of anode electrode 34 that is separated from each other and cathode electrode 36.Anode electrode 34 is formed on down on the upper surface of ceramic bases 35.Anode electrode 34 separates with the profile of heat radiation through hole 50a, makes anode electrode 34 and the cathode electrode 36 that is formed in the LED device mounting zone insulate.Anode electrode 34 also is formed on down on the lower surface of ceramic bases 35.The anode electrode 34 that is formed on down on the lower surface of ceramic bases 35 can extend from the anode electrode 34 that form at the upper surface of ceramic bases 35 down.Alternatively, if can be electrically connected to the anode electrode 34 that on the upper surface of following ceramic bases 35, forms, then can separate with the anode electrode 34 that on the upper surface of following ceramic bases 35, forms at the anode electrode 34 that forms on the lower surface of following ceramic bases 35.Cathode electrode 36 forms on the direction relative with anode electrode 34.The inner surface of the upper shed of cathode electrode 36 covering heat radiation through hole 50a, 50b and 50c and the cavity that on following ceramic bases 35, forms.For this reason, according to first embodiment, LED device 32 is installed on the cathode electrode 36.LED device 32 42 is electrically connected to anode electrode 34 and cathode electrode 36 by going between.

Though not shown, LED device 32 can insulate by insulating material and cathode electrode 36, and can be inserted between LED device 32 and the cathode electrode 36 such as the electric conducting material of Ag epoxy resin.Negative electrode can substitute anode electrode 34 anodes and then can substitute cathode electrode 36 in case of necessity.In this case, driving power is oppositely to be applied to anode and negative electrode.

The fin 46 that is formed by the electric conducting material such as Cu or Al is filled in the cavity of the lower surface that is formed at down ceramic bases 35.Fin 46 is as heat sink.

If fin 46 directly is filled in the cavity of being made by pottery, then fin 46 is difficult to be attached to cavity.For this reason, the inner surface of the cavity that forms on the lower surface of following ceramic bases 35 is coated with cathode electrode 36.When the cavity inner surface that forms is coated with the cathode electrode of being made by metal material 36, can improve the adhesiveness of fin 46 on the lower surface of following ceramic bases 35.

When the cavity that forms on the lower surface in following ceramic bases 35 formed with the shape of tapered cylinder, the inside diameter D 1 of cavity for example was more than the 1.0mm, and the outer diameter D 2 of cavity for example is below the 3.55mm.These are the sample datas at the LED device with 5 * 55mm size.Revise the shape and size of cavity according to the size of LED device 32 to be installed.For the LED device 32 with 3 * 3mm size, the inside diameter D 1 of the cavity that forms on the lower surface of following ceramic bases 35 can be for example for more than the 0.3mm, and the outer diameter D 2 of cavity can for example be below the 2.0mm, and is heat sink so that fin 46 is used as.

Simultaneously, the lower end of reflecting plate 44 separates with anode electrode 34 and cathode electrode 36 slightly.Reflecting plate 44 and pattern electrode 34 and 36 insulation.Preferably, the slit between reflecting plate 44 and pattern electrode 34 and 36 is as far as possible little, to prevent being absorbed (leakage) from the light that the side-emitted of LED device 32 goes out the main body of last ceramic bases 40.Along with the slit becomes littler, the light quantity that absorbs in the main body of last ceramic bases 40 descends.As a result, the brightness of light increases.

According to first embodiment,, can distribute the heat that is produced from the LED device rapidly because fin and heat transfer component are formed on down in the ceramic bases.As a result, the thermal stress of LED device is minimized, thus the stable operation of LED device.

(second embodiment)

Fig. 7 is the viewgraph of cross-section of LED encapsulation according to a second embodiment of the present invention.When according to the LED encapsulating structure of second embodiment when comparing according to the LED encapsulation of first embodiment, second embodiment is different from the first embodiment part and is that reflecting plate 44 is connected with anode electrode 34.

The lower end of reflecting plate 44 is connected to anode electrode 34, so that prevent the loss of the light launched from LED device 32.The method of integrated reflecting plate 44 and anode electrode 34 is not designated, and understands easily to those skilled in the art and need not illustrate in addition.

Because in Fig. 7, the lower end of reflecting plate 44 is connected to anode electrode 34, so second embodiment is different from first embodiment in the configuration aspects of anode electrode 34 and cathode electrode 36.

With reference to figure 7, anode electrode 34 is formed on down the two ends of the upper surface of ceramic bases 35.Form in the LED device mounting zone that cathode electrode 36 forms on the upper surface of following ceramic bases 35.The anode electrode 34 that forms on cathode electrode 36 that forms and the upper surface that is descending ceramic bases 35 on the upper surface of following ceramic bases 35 separates.Cathode electrode 36 is formed on the inner surface of cavity, and described cavity forms on the lower surface of following ceramic bases 35, and below heat radiation through hole 50a, 50b and 50c.

According to second embodiment, can obtain the effect identical with first embodiment.In addition, reduce because compare light loss, so can improve brightness with first embodiment.

(the 3rd embodiment)

Fig. 8 is the viewgraph of cross-section of the LED encapsulation of a third embodiment in accordance with the invention.When comparing according to the LED encapsulation of the 3rd embodiment and according to the LED encapsulation of second embodiment, the 3rd embodiment is different from second embodiment on the structure of cathode electrode 36, and provides metal parts 52 in the LED encapsulation.

With reference to figure 8, cathode electrode 36 is horizontally formed at down in the LED device mounting zone that forms on the upper surface of ceramic bases 35.Cathode electrode 36 covers the upper surface of heat transfer component 38.One end of cathode electrode 36 extends downwardly into down length predetermined in the ceramic bases 35 in vertical direction, and the outer surface of ceramic bases 35 extension downwards in the horizontal direction.Then, an end of cathode electrode 36 extends downwards along the outer surface of following ceramic bases 35, so that be formed on down on the lower surface of ceramic bases 35.

With reference to figure 8, metal parts 52 is formed on down on the inner surface of the cavity that forms on the lower surface of ceramic bases 35.The two ends of metal parts 52 separate with the anode electrode 34 and the cathode electrode 36 that form on the lower surface of following ceramic bases 35.In this case, the same with first and second embodiment, metal parts 52 has cathode electrode 36 identical functions that form on the inner surface of the cavity that forms on the lower surface with following ceramic bases 35.Though metal parts 52 separates with anode electrode 34 and cathode electrode 36 in Fig. 8, metal parts 52 can be connected to anode electrode 34 or cathode electrode 36.

According to the 3rd embodiment, can obtain the effect identical with first embodiment.In addition, reduce because compare light loss, so can improve brightness with first embodiment.

(the 4th embodiment)

Fig. 9 is the viewgraph of cross-section of the LED encapsulation of a fourth embodiment in accordance with the invention.Figure 10 is the plane graph of the example of diagram interior electrode shown in Figure 9.Figure 11 is the plane graph of another example of diagram interior electrode shown in Figure 9.

LED encapsulation as shown in Figure 9 comprises ceramic bases 35 and last ceramic bases 40 down.

Chip-type LED device 32 is installed in down in the luminescent device installation region that forms on the upper surface of ceramic bases 35.The first external electrode (anode) 34 and the second external electrode (negative electrode) 36 are formed on down in the ceramic bases 35, just as in the 4th embodiment.LED device 32 is installed on the second external electrode 36.LED device 32 42 is electrically connected to the first external electrode 34 and the second external electrode 36 by going between.Though not shown, LED device 32 can be by insulating material and the second external electrode 36 insulation.The first external electrode 34 is anodes, and the second external electrode 36 is negative electrodes.Certainly, its polarity also can be put upside down.

Last ceramic bases 40 is arranged on down on the ceramic bases 35.Last ceramic bases 40 with the regional corresponding zone that LED device 32 is installed in comprise cavity with predetermined inclination.Cremasteric reflex plate 44 on the inner surface of the cavity that forms in last ceramic bases 40 is so that surround LED device 32.

Following ceramic bases 35 and last ceramic bases 40 can be called as substrate.

Preferably, following ceramic bases 35 is that the rheostat material of main material is made by comprising with ZnO.Predetermined oxide is added into the rheostat material to form down ceramic bases 35.

The content of ZnO is illustrated in table 1 and 2 with the type and the content of the oxide that will be added into.

Table 1

Table 2

In addition, instantly ceramic bases 35 respectively by based on LTCC, Al ₂O ₃When making with the rheostat of ZnO, the temperature of the lower end of the thermal conductivity of following ceramic bases 35 and LED device is illustrated in the table 3.

Table 3

	LTCC	Al 2O 3	The ZnO rheostat
				Thermal conductivity (w/mK)	3	17	24
The temperature of the lower end of LED device (℃)	155	107	97

As mentioned above, if ceramic bases 35 is made as the rheostat material of main component by comprising with ZnO down, then can distribute heat rapidly owing to rheostatic high heat conductance from following ceramic bases.Therefore, can reduce temperature according to electronic part package of the present invention.Especially, according to the 4th embodiment, following ceramic bases 35 is formed by the rheostat sheet with high heat conductance.For this reason, the process that is used to make down ceramic bases is simplified, and compares with first to the 3rd embodiment, and it can more promptly dispel the heat.

Through hole 50 is formed in the following ceramic bases 35 of below, LED device mounting zone, so that have the size bigger than the size of LED device 32.Through hole 50 runs through ceramic bases 35 down in vertical direction.Be filled in the through hole 50 by the heat transfer component of making such as the electric conducting material (for example Ag cream) of metal 38.The through hole 50 that heat transfer component 38 is filled in wherein can be formed to have circle, quadrangle or polygon cross section.

For example, when forming through hole 50, change the temperature of LED device 32 according to the diameter of through hole 50 with columniform shape, as shown in table 4.Below the temperature of lower end of the LED device (led chip) of table 4 when electrical power as 1W being shown being applied to LED encapsulation on it and reaching heat balance.Therefore, consider the size and the optical characteristics of semiconductor packages, through hole 50 is formed to have appropriate diameter.

Table 4

Most of heat that LED device 32 is produced at first is transmitted to down the part of the below, LED device mounting zone in the ceramic bases 35.Therefore, heat transfer component 38 is formed on down the below, LED device mounting zone in the ceramic bases 35, makes and can promptly distribute the heat that is produced from LED device 32.For example, when arranging a plurality of LED device 32, preferably heat transfer component 38 is formed under each LED device 32.

Following ceramic bases 35 comprises electrode 52 and the second inner electrode 54 in first.An end of electrode 52 is connected to the first external electrode 34 in first, and the other end setting of the first interior electrode 52 is towards the second external electrode 36.One end of the second inner electrode 54 is connected to the second external electrode 36, and the other end setting of the second inner electrode 54 is towards the first external electrode 34.

Distance in the varistor voltage in the following ceramic bases 35 and first between electrode 52 and the second inner electrode 54 increases pro rata.The area of the overlapping part of electrode 52 and the second inner electrode 54 increases pro rata in the rheostat electric capacity in the following ceramic bases 35 and first.That is, can adjust rheostatic characteristic by the distance between the electrode 52 and 54 in using.When the number of interior electrode 52 and 54 increases, can adjust rheostatic electric capacity.Interior electrode 52 and 54 forms in Fig. 9 in couples.Yet the number of interior electrode is unrestricted, and can depend on rheostatic characteristic and electric capacity and change.

In Fig. 9, the distance between the interior electrode 52 and 54 is preferably less than the distance between the external electrode 34 and 36 above or below the electrode 52 and 54 in being arranged on, to remove undesirable parasitic antenna.

Be formed on the upper surface of ceramic bases 40 by the insulating barrier of making such as the insulating material of glass 47.Insulating barrier 47 also is formed between the first external electrode 34 and the second external electrode 36.When the electronic part package according to the 4th embodiment is surface mounted on the printed circuit board (PCB), plate printed circuit board (PCB) in advance to carry out welding.Rheostat is a semi-conducting material, and operating period rheostatic surface conversion is become conductor in plating.For this reason, coating is formed on the rheostatic surface between the first external electrode 34 and the second external electrode 36, and this causes short circuit.Therefore, insulating barrier 47 be formed on the surface of ceramic bases 40 and between the first external electrode 34 and the second external electrode 36 to prevent short circuit.Insulating barrier 47 can be made by any material, as long as insulating barrier 47 is attached to down ceramic bases 35 and last ceramic bases 40 well, and plating operating period, and to showing not influence with the corresponding color of the light that is sent from LED device 32 not by bath corrosion.

Be described with reference to Figure 10 the structure of the first interior electrode 52 and the second inner electrode 54.Shown in Figure 10 A, in following ceramic bases 35, an end of electrode 52 is connected to the first external electrode (not shown) in first, and in the second external electrode (not shown) orientation first other end of electrode 52.The other end of electrode 52 is formed to surround through hole 50 in first.Shown in Figure 10 B, in following ceramic bases 35, an end of the second inner electrode 54 is connected to the second external electrode (not shown), and is orientated the other end of the second inner electrode 54 towards the first external electrode (not shown).The other end of the second inner electrode 54 is formed to surround through hole 50.

Therefore, when electrode in first 52 was laminated on the second inner electrode 54, shown in Figure 10 C, the other end of the first interior electrode 52 and the other end of the second inner electrode 54 overlapped each other.

In Figure 10, in order to be easy to explanation, through hole 50 is shown having quadrangular cross section, and in the other end of interior electrode 52 and 54 each is shown having the quadrangular cross section that the center has opening.If through hole 50 has circular cross section, then in electrode 52 and 54 the other end each have the circular cross section that heart place therein has opening.The opening of each in the interior electrode 52 and 54 the other end has the diameter bigger than the diameter of through hole 50.

Be described with reference to Figure 11 another structure of the first interior electrode 52 and the second inner electrode 54.Shown in Figure 11 A, in following ceramic bases 35, an end of electrode 52 is connected to the first external electrode (not shown) in first, and in the second external electrode (not shown) orientation first other end of electrode 52.The other end of electrode 52 separates with through hole 50 in first.That is, on sheet type rheostat material layer with first in electrode 52 patternings.In Figure 11 A, one jiao of rheostat material layer place with first in electrode 52 patternings.Shown in Figure 11 B, in following ceramic bases 35, an end of the second inner electrode 54 is connected to the second external electrode (not shown), and in the first external electrode (not shown) orientation the other end of electrode 54.The other end of the second inner electrode 54 separates with through hole 50.That is, on sheet type rheostat material layer with the second inner electrode 54 patternings.In Figure 11 B, at one jiao of rheostat material layer place with the second inner electrode 54 patternings.

As long as electrode 52 and 54 separates with through hole 50 in first and second, each in the first and second interior electrodes 52 and 54 can have and variform shape shown in Figure 11.

When electrode in first 52 was laminated on the second inner electrode 54, the other end of the first interior electrode 52 and the other end of the second inner electrode 54 overlapped each other, shown in Figure 11 C.

When the interior electrode 52 and 54 shown in Figure 10 and 11 was compared to each other, each in the interior electrode 52 and 54 as shown in figure 10 had such as each the big surface area of surface area in the interior electrode 52 and 54 shown in Figure 11.Therefore, big from as shown in figure 10 interior electrode 52 and 54 capacity ratioes that obtained from as shown in figure 11 interior electrode 52 and 54 electric capacity that obtained.

If interior electrode 52 and 54 too close through holes 50, then when when being filled in heat transfer component 38 heat radiations in the through hole 50, the internal electrode 52 and 54 of heat is influential.For this reason, in Figure 10 and structure shown in Figure 11, interior electrode 52 and 54 separates with preset distance and through hole 50.

If owing to the heat of being distributed from LED device 32 makes temperature is more than 60 ℃, then rheostatic IV characteristic significantly worsens.For this reason, most preferably, it is position below 60 ℃ that the layer zone of varistor voltage (reflection) that provides between electrode 52 and the second inner electrode 54 in first is positioned in owing to the heat of being distributed from LED device 32 makes temperature.In addition, be that position below 60 ℃ can be determined by use to conduct heat simulation or thermal image camera owing to the heat of being distributed from LED device 32 makes temperature.

Simultaneously, preferably, last ceramic bases 40 is by making with following ceramic bases 35 identical materials.

In above-mentioned the 4th embodiment, heat transfer component 38 can be formed to have the structure identical with the heat transfer component 38 of first to the 3rd embodiment.In this case, interior electrode 52 and 54 should be modified, and this can easily be carried out by those skilled in the art.

According to the 4th embodiment,, have rheostatic electrical characteristics so encapsulate because encapsulation is made by the rheostat material.Because this reason, from heat that the LED device distributed because heat transfer component and rheostatic thermal conductivity and be dispersed into the outside rapidly.

Because substrate has rheostatic electrical characteristics, do not need Zener diode or rheostat separately so can prevent static effectively.

Following ceramic bases is made by identical rheostat material with last ceramic bases.For this reason, following ceramic bases is recently shunk with identical contraction during the process of curing with last ceramic bases, and is attached to each other.As a result, can improve reliability of products.

Because encapsulation has the structure simpler structure of beguine according to the LED encapsulation of first to the 3rd embodiment according to the LED of the 4th embodiment, so the method for making according to the LED encapsulation of the 4th embodiment is simplified.For this reason, can improve output and minimizing manufacturing cost.

(the 5th embodiment)

Figure 12 is the viewgraph of cross-section of LED encapsulation according to a fifth embodiment of the invention.

LED according to the 5th embodiment encapsulates the identical structure of LED encapsulation that has basically with according to the 4th embodiment.Therefore, indicate the key element identical, and omit its detailed explanation with the key element of the 4th embodiment by identical Reference numeral.

Different according to the internal structure of the following ceramic bases 35 of the 5th embodiment with internal structure according to the following ceramic bases 35 of the 4th embodiment.

According to the 5th embodiment, the cavity 60 with predetermined leaning angle (10 to 45 ° angle for example, its requirement are easy to heat radiation) is formed on down on the lower surface of ceramic bases 35 (promptly with the regional corresponding part of LED device mounting).The fin 46 that is formed by the electric conducting material such as Cu or Al is filled (burying) in cavity.Heat transfer component 38 is provided between LED device mounting zone and the cavity 60.

In the first and second interior electrodes 52 and 54 shown in Figure 12 each has and the same structure shown in Figure 10 or 11.That is, in Figure 12, with the direction of through hole 50 quadratures on provide first and second in electrode 52 and 54 the other end surround through hole 50, the same with Figure 10, perhaps separate, as with Figure 11 with through hole 50.In addition, in Figure 12, with the direction of cavity 60 quadratures on provide first and second in electrode 52 and 54 the other end surround cavity 60, the same with Figure 10, perhaps separate, as with Figure 11 with cavity 60.

In Figure 12, can be only with the direction of through hole 50 quadratures on form in electrode 52 and 54.Alternatively, can be only with the direction of cavity 60 quadratures on form in electrode 52 and 54.

In the 5th above-mentioned embodiment, heat transfer component 38 can be formed to have the structure identical with the heat transfer component 38 of first to the 3rd embodiment.In this case, interior electrode 52 and 54 should be modified, and this can easily be carried out by those skilled in the art.

According to the 5th embodiment, can obtain the effect identical, and compare with the 4th embodiment with the 4th embodiment, can more promptly dispel the heat.

Before describing other embodiment, with the problem of explanation first to the 3rd embodiment.

Being formed in the structure of following ceramic bases, be difficult to during through hole is filled, guarantee the flatness of substrate as the described through hole 38a of first to the 3rd embodiment, 38b and 38c.That is, Ag epoxy resin generally is used for the LED device is attached to encapsulation.Because Ag epoxy resin has the lower thermal conductivity of about 3W/mk, so Ag epoxy resin is unsuitable in conjunction with the great power LED device.In addition, if during through hole is filled through hole packing material fully not, then in through hole, form cavity, as shown in FIG. 13A, if perhaps through hole is by packing material too much, then material is outstanding from through hole, shown in Figure 13 B.Because each among the 4th and the 5th embodiment has the structure of wherein using predetermined material filling vias, so the problems referred to above occur among the 4th and the 5th embodiment.

According to above-mentioned through hole interstitital texture, the flatness that has throughhole portions in the substrate is unsuitable for carrying out eutectic bond or flip-chip combination.

For this reason, in the of the present invention the 6th and the 7th embodiment, propose to dispel the heat rapidly and do not have the structure of through hole interstitital texture.

(the 6th embodiment)

Figure 14 is the viewgraph of cross-section of LED encapsulation according to a sixth embodiment of the invention.

Be surface mounted on the circuit pattern (the thin pattern of making by copper etc.) of metal PCB (not shown) by welding according to the LED of the 6th embodiment encapsulation.

LED encapsulation according to the 6th embodiment comprises ceramic bases 35 and last ceramic bases 40 down.

The pattern electrode 34 and 36 that is separated from each other is formed on down on the ceramic bases 35.LED device 32 is installed in down on the LED device installation region of ceramic bases 35.With the die attachment resin (not shown) that is inserted in therebetween LED device 32 is provided in pattern electrode 34 and 36 one (being cathode electrode 36 in Figure 14).

Following ceramic bases 35 has high thermal conductivity (for example 50 to 100W/mK).Following ceramic bases is made by the material that adds the glass that is used for LTCC in wherein one of in AlN, BN and BeO, to have above-mentioned thermal conductivity.Alternatively, following ceramic bases can be made by the material that one of wherein adds in the rheostat material based on ZnO among AlN, BN and the BeO.In addition, following ceramic bases can be made by the material that one of wherein adds in the material based on MgO among AlN, BN and the BeO.

AlN has the thermal conductivity of 180W/mK, and should be in reducing atmosphere (with high sintering temperature) sintering.Therefore, if under the situation of not adding the glass that is used for LTCC simultaneously sintering AlN and Ag, then be difficult to form interior electrode.BN has the thermal conductivity of 50W/mK, and should be in reducing atmosphere (with high sintering temperature) sintering.Therefore, if BN and Ag are sintered simultaneously, then be difficult to form interior electrode under the situation that does not have to add the glass be used for LTCC.BeO have 210W/mK thermal conductivity and should (with high sintering temperature) sintering.Therefore, if BeO and Ag are sintered simultaneously, then be difficult to form interior electrode under the situation that does not have to add the glass be used for LTCC.

If the AlN of the glass of scheduled volume and scheduled volume, BN or BeO are mixed with each other, then the sintering temperature of AlN, BN or BeO reduces up to about 900 ℃.Therefore, Ag and AlN, BN or the BeO of electrode in sintering forms simultaneously, and following ceramic bases has the thermal conductivity in 50 to the 100W/mK scopes.

In addition, if in a kind of rheostat material that joins based on ZnO among AlN, BN and the BeO, AgPd and AlN, BN or the BeO of electrode in then sintering forms simultaneously.Main component based on the rheostat material of ZnO is ZnO.In addition, Bi ₂O ₃Or Sb ₂O ₃Join based in the rheostat material of ZnO as agglutinant, so that at the rheostat material of about 1000 ℃ of sintering based on ZnO.If in the time of in a kind of among AlN, BN and the BeO joins based on the rheostat material of ZnO, the content of AlN, BN or BeO is greater than predetermined critical (for example 60%), and then the rheostat characteristic based on the rheostat material of ZnO disappears after sintering.For this reason, the content of AlN, BN or BeO should be adjusted into less than predetermined critical so that allow rheostat material based on ZnO to have thermal conductivity and rheostat characteristic in 50 to the 100W/mK scopes.Simultaneously, if do not need to allow rheostat material to have the rheostat characteristic, then the content of AlN, BN or BeO can be adjusted into greater than predetermined critical based on ZnO.

The process that is used to make down ceramic bases 35 is similar to and is used to make rheostatic conventional process.For example, such as Bi ₂O ₃Or Sb ₂O ₃Additive and AlN, BN and BeO in one of add in the ZnO powder so that the composition of ZnO powder is adjusted into desired composition.When water or alcohol during as solvent, the ZnO powder that composition is adjusted to desired composition by ball milling 24 hours to prepare material powder.Be approximately being dissolved in the solution based on toluene/alcohol of 6wt% with respect to material powder, and this solution is mixed in the ready material powder with the preparation matrix band as the PVB adhesive of additive.After this, will be dissolved in material powder in the solution and adhesive by little ball mill grinds and mixed 24 hours so that make slurries.By use scrape the skill in using a kitchen knife in cookery wait make have the expectation thickness matrix band.To be applied on the matrix band such as the conductive paste of Ag, Pt or Pd by using, so that electrode forms thereon a plurality of in making such as the method for the manufacturing thick film of silk screen printing or such as the method for the manufacturing film of sputtering method, evaporation, chemical vapour deposition technique or collosol and gel coating process.

Then, lamination and compression sequentially is a plurality of.After this, sheet is carried out punching press, cuts, cures and burns handle the following ceramic bases 35 that has expectation thickness with manufacturing.The number that is used to form down the sheet of ceramic bases 35 depends on the thickness of ceramic bases 35 down.As mentioned above, raw material is scraped the skill in using a kitchen knife in cookery by use and by moulding, is come lamination according to being used to make rheostatic common process then.As a result, can form down ceramic bases 35.When raw material during, varied in thickness can be controlled in the scope of 0 to 1 μ m by moulding.Therefore, can guarantee the surface flatness of substrate, this makes can carry out flip-chip combination or eutectic bond.

On the lower surface of LED device 32, use material such as sapphire or SiC.Be similar to down the thermal coefficient of expansion of ceramic bases 35 such as the material coefficient of thermal expansion coefficient of sapphire or SiC.Therefore, when the LED device is directly installed on the metal as shown in Figure 3, highly stable in comparison.

Core on the lower surface of following ceramic bases 35 forms groove.Metal fin 46 is inserted in the groove.Preferably, has the Cu sheet of thermal conductivity of about 350W/mK as fin 46.

Fin 46 is attached to by ceramic bases 35 under the while sintering and last ceramic bases 40 formed packaging bodies.In this case, packaging body means the last ceramic bases 40 with cavity and does not have the following ceramic bases 35 of fin 46 to be attached to each other.Though do not have to describe the process that is used to form packaging body in detail, be apparent that to those skilled in the art by known manufacture process to form packaging body.

For fin 46 is attached to packaging body, at first on the lower surface (promptly descending the lower surface of ceramic bases 35) of packaging body, be formed on the space of wherein inserting fin 46.Then, fin 46 is inserted in this space.In this case, scolder is put on the upper surface of fin 46, and fin 46 is inserted in this space.Then, heating fin 46 and following ceramic bases 35 are so that be attached to each other.Scolder is used to reduce the bond strength and the thermal resistance at interface therebetween between fin 46 and the following ceramic bases 35.If following ceramic bases 35 is not to be formed by the rheostat material, but form by conventional ceramic material such as aluminium oxide or LTCC, then Ag is plated on the contact surface between fin 46 and the following ceramic bases 35, to improve the character that combines between conventional ceramic bases and the fin 46, plate Ni or Ag (Ni or Sn) then thereon, to improve adhesiveness to scolder.In addition, because fin as shown in figure 14 46 is Cu sheets, so 46 pairs of scolder adhesivenesses of fin deficiency.Therefore, use Ni or Ag (Ni or Sn) to plate fin 46, and then use this fin 46.

Last ceramic bases 40 is arranged on down on the ceramic bases 35.Last ceramic bases 40 with the regional corresponding zone that LED device 32 is installed in comprise cavity.Reflecting plate 44 is provided on the inner surface of the cavity that forms in the ceramic bases 40.The projection 44a that is suspended on ceramic bases 40 upper ends is formed on the upper end of reflecting plate 44.Last ceramic bases 40 is by making with following ceramic bases 35 identical materials.

In the 6th embodiment, the Cu sheet is as fin 46.Diamond sheet with thermal conductivity of about 1000W/mK also can be used as fin 46.The thermal conductivity of diamond sheet has deviation according to the technology that is used to make the diamond sheet.

According to the 6th embodiment, because substrate has high thermal conductivity, so LED device and descend from the thermal resistance between the last part of its heat radiation.Because this reason is compared with first to the 5th embodiment, the heat of distributing from the LED device more promptly is dispersed into the outside.

In addition, can carry out the combination of eutectic bond and flip-chip so that in conjunction with the LED device.

(the 7th embodiment)

Figure 15 is the viewgraph of cross-section of LED encapsulation according to a seventh embodiment of the invention.When according to the LED of the 7th embodiment encapsulation when comparing according to the LED encapsulation of the 6th embodiment, the 7th embodiment is different from the 6th embodiment in the configuration aspects of descending ceramic bases 35.In the explanation of the 7th embodiment below, ceramic bases 35 is down only described.Other explanation is identical with those of above-mentioned the 6th embodiment.

According to the 7th embodiment, following ceramic bases 35 is formed by plural lamella.In Figure 15, the first lamella 35a is laminated on the second lamella 35b.Yet, in case of necessity can the more lamella of lamination.

The thermal conductivity of the first lamella 35a (for example in 50 to 100W/mK scope) is higher than the thermal conductivity of the second lamella 35b.Following ceramic bases 35 has high thermal conductivity (for example in 50 to 100W/mK scope).Following ceramic bases is made by the material that the glass that wherein is used for LTCC joins one of AlN, BN and BeO, to have above-mentioned thermal conductivity.Alternatively, following ceramic bases can be made by joining based on the material in the rheostat material of ZnO one of among wherein AlN, BN and the BeO.The process that being used to described in the 6th embodiment made down ceramic bases is used to make the first lamella 35a.

Preferably, the first lamella 35a is thin as much as possible, to guarantee to distribute rapidly from the heat of LED device 32 and the surface flatness of carrying out the required substrate of eutectic bond (or flip-chip in conjunction with).For example, under the situation of the substrate with 5 * 5mm size, preferably the thickness of the first lamella 35a is in 0.1 to 0.2mm scope.Be contemplated that the first lamella 35a becomes thinner.Yet,, during sintering, can not guarantee the intensity of the first lamella 35a and the flatness of the first lamella 35a if the first lamella 35a is thin excessively.According to the 7th embodiment, the first lamella 35a is thinner than the second lamella 35b, makes heat more promptly be transmitted to the fin 46 of the second lamella 35b.

Raw material is scraped the skill in using a kitchen knife in cookery by use and by moulding, is come lamination according to being used to make rheostatic common process then.As a result, can form down ceramic bases 35a.When raw material during, the sheet varied in thickness can be controlled in the scope of 0 to 1 μ m by moulding.Therefore, can guarantee the surface flatness of substrate, it makes can carry out flip-chip combination or eutectic bond.Especially, the material of use such as sapphire or SiC on the lower surface of LED device 32.Be similar to the thermal coefficient of expansion of the first lamella 35a such as the material coefficient of thermal expansion coefficient of sapphire or SiC.In addition, the thermal coefficient of expansion of the first lamella 35a be metal thermal coefficient of expansion 10%.Therefore, the situation when as shown in Figure 3 LED device is directly installed on the metal is compared, and the situation of present embodiment is highly stable.

Fin 46 runs through the core of the second lamella 35b.Preferably, has the Cu sheet of thermal conductivity of about 250W/mK as fin 46.

The second lamella 35b can be made by aluminium oxide, quartz, calcium zirconate, forsterite, SiC, graphite, vitreous silica, mullite, cordierite, zirconia, beryllium oxide, aluminium nitride, rheostat material, LTCC (LTCC) etc.

The method of adhering to fin 46 in the 6th embodiment is as the method for adhering to fin 46 among the 7th embodiment.In the 7th embodiment, the Cu sheet is as fin 46.Diamond sheet with thermal conductivity of about 1000W/mK also can be used as fin 46.The thermal conductivity of diamond sheet has deviation according to the technology that is used to make the diamond sheet.

In the 7th embodiment, following ceramic bases 35 is formed by the first lamella 35a and the second lamella 35b, so that the first lamella 35a that has a high conductance by use guarantees the surface flatness of substrate, and the fin 46 of the heat that will produce from LED device 32 by the second lamella 35b is dispersed into the outside rapidly.

According to the 7th embodiment, first lamella with high heat conductance is made by the material that joins the rheostat material one of among wherein AlN, BN and the BeO.In addition, first lamella is formed in the substrate, and fin is inserted in first lamella below.Because this reason, can reduce the LED device and from the thermal resistance between the last part of its heat radiation.As a result, the heat of distributing from the LED device promptly can be dispersed into the outside.

In addition, can carry out the combination of eutectic bond or flip-chip so that the LED device is attached to encapsulation.

(the 8th embodiment)

Figure 16 is the viewgraph of cross-section according to the electronic part package of the eighth embodiment of the present invention.

The 8th embodiment is the modification of the 6th and the 7th embodiment.The 8th embodiment is different from the 6th and the 7th embodiment part and is to provide diamond sheet 49 between LED device mounting zone and fin 46.

Pure diamond has the thermal conductivity of about 2000W/mK.The diamond sheet 49 that is used for the 8th embodiment is made by carbonado.Be added in the diamond sheet 49 at the process device impurity of making diamond sheet 49, make diamond sheet 49 form by the CVD diamond of thermal conductivity with about 1000W/mK.

The CVD diamond is a polycrystalline diamond, and it is by using such as the heating source of plasma and at high temperature synthetic such as the gas of hydrogen or methane.If diamond sheet 49 is employed, then thermal conductivity increases.As a result, compare, heat can be dispersed into the outside quickly with other embodiment.

Simultaneously, diamond sheet 49 has about 3 * 10 ^-6/ ℃ thermal coefficient of expansion.The thermal coefficient of expansion of copper is 16 * 10 ^-6/ ℃.The thermal coefficient of expansion of LED device 32 is approximately 6 * 10 ^-6/ ℃.If use the diamond sheet 49 among Cu sheet rather than Figure 16, then have following problems: as described in reference to figure 3, because variations in temperature (poor) at the combination interface place of LED device 32 and Cu sheet thermal expansion and contraction can take place.Yet the thermal conductivity of diamond sheet 49 is significantly higher than the thermal conductivity (thermal conductivity of copper is approximately 350W/mK) of Cu sheet, and the thermal coefficient of expansion of diamond sheet 49 is similar to the thermal coefficient of expansion of LED device 32.For this reason, can prevent owing to variations in temperature (poor) makes LED device 32 separately.

According to the 6th embodiment, the glass that is used for LTCC joins expensive AlN, BN or BeO to use expensive AlN, BN or BeO, makes ceramic bases down have the thermal conductivity in 50 to the 100W/mK scopes.According to the 8th embodiment, because use not expensive carbonado rather than as the expensive diamond of jewelry, so can reduce manufacturing cost.According to the thermal conductivity far of the diamond sheet 49 of the 8th embodiment greater than thermal conductivity according to heat transfer component 38, the first lamella 35a and the fin (copper sheet) 46 of the foregoing description.In addition, be similar to the thermal coefficient of expansion of LED device 32 according to the thermal coefficient of expansion of the diamond sheet 49 of the 8th embodiment.For this reason, diamond sheet 49 is to have radiating efficiency par excellence and can prevent the advantageous device that the LED device separates.

Diamond sheet 49 according to the 8th embodiment is manufactured as follows: if be blown in the (not shown) of chamber such as the gas of hydrogen or methane, and at high temperature plasma is applied to this gas scheduled time then, then the kind crystalline substance of diamond sheet is formed.At high temperature plasma is applied to continuously this gas scheduled time, up to the kind crystals growth of diamond sheet and have desirable thickness.Then, upper surface and lower surface with diamond sheet of expectation thickness are processed by using jewelling tool, and by using laser to come the cutting drilling flag to have desired size.For example, the diamond sheet is cut to have the size of 2 * 2 * 0.5 size.The diamond sheet that is cut is as the diamond sheet 49 according to the 8th embodiment.Because by using conventional process technology that the varied in thickness of diamond sheet 49 is controlled to desired scope, so can guarantee the surface flatness of substrate.Have the below that is arranged on LED device 32 with the diamond sheet 49 of the similar thermal coefficient of expansion of thermal coefficient of expansion of the LED device with high heat conductance, this makes and can address the above problem.

The manufacturing of diamond sheet 49 is not limited to foregoing description.Even when the content of manufacture process and impurity not simultaneously, as long as material has desired thermal coefficient of expansion and thermal conductivity, any material can be used as diamond sheet 49.

Simultaneously, when according to the above-mentioned the 6th and the fin 46 of the 7th embodiment when being formed by the diamond sheet, the diamond sheet 49 of Zhi Zaoing can be used as fin 46 as mentioned above.

The process that is used to make according to the electronic part package of the 8th embodiment is described below.Because the installation of the LED device 32 that carries out after the substrate manufacturing and wire bond have been well-known to those skilled in the art, so omit its explanation.Following ceramic bases 35 is formed by the substrate of two laminations.Have the substrate that diamond sheet 49 inserts through hole wherein and be called as at the bottom of the intermediate base, be called as substrate down and have the substrate that fin 46 inserts through hole wherein.Alternatively, following ceramic bases 35 can be formed by a substrate.In this case, through hole can form in the following center of ceramic bases 35, and fin 46 and diamond sheet 49 sequentially are inserted in the through hole.In Figure 16, the width of fin 46 is greater than the width of diamond sheet 49.That is, form step in the through hole that in following ceramic bases 35, forms.The reason of doing like this is that fin 46 is easy to cooperate with through hole when fin 46 is inserted in the through hole.Simultaneously, the width of fin 46 can equal the width of diamond sheet 49.Yet, when the width of fin 46 easily depends on the width of diamond sheet 49, can further increase work efficiency.

Use to make the well-known process of LTCC and come a plurality of potsherds of lamination, then with the part in corresponding of LED device mounting zone in form cavity, go up ceramic bases 40 thereby make.

Use the well-known process of making LTCC to come a plurality of potsherds of lamination, and in sheet, form the hole that diamond sheet 49 inserts wherein, thereby make at the bottom of the intermediate base by punching press.Subsequently, pattern electrode 34 and 36 is printed on the upper surface at the bottom of the intermediate base, so that be separated from each other.At this,, omit its explanation because the printing of pattern electrode 34 and 36 is well-known to those skilled in the art.

Use the well-known process of making LTCC to come a plurality of potsherds of lamination, and in sheet, form the hole that fin 46 inserts wherein, thereby make substrate down by punching press.

After this, the intermediate base bottom is pressed in down in the substrate, and will goes up on basalis is pressed at the bottom of the intermediate base.The substrate of lamination is sintered then.

Subsequently, fin 46 is inserted into the hole from the lower surface of down substrate, and diamond sheet 49 is inserted into the hole from the upper surface of middle substrate, contacts so that enter with fin 46.In this case, Ti, Pt or Au layer or Ti, Pt or Ag layer are formed on the upper surface of diamond sheet 49 and in the lower surface each by plating and sputter, to improve the adhesiveness to metal.

Finish electronic part package as mentioned above according to the 8th embodiment.

Fin 46 and diamond sheet 49 with different thermal conductivities have been used for above-mentioned the 8th embodiment.Yet, can insert diamond sheet 49 and replace fin 46.That is, the diamond sheet can be used as by Reference numeral among Figure 16 46 and 49 indicated parts.

Figure 17 illustrates thermal conductivity (for example thermal conductivity of the substrate of ceramic packaging) when the LED illustrated in fig. 14 encapsulation analog result when being configured to 50W/mK and 100W/mK and the form of the analog result when when the thermal conductivity of the second lamella 35b of electronic part package shown in Figure 15 is configured to 25W/mK the thermal conductivity of its first lamella 35b being arranged to 50W/mK and 100W/mK.Each power consumption in the LED device is presumed to 3W, and the temperature that will surround the air of encapsulation is presumed to 25 ℃.Suppose and under desirable heat balance, carry out this simulation.

With reference to Figure 17, be appreciated that the LED device of structure shown in Figure 14 and the thermal resistance that the thermal resistance between the metal PCB (not shown) is lower than structure shown in Figure 15.That is structure heat radiation, shown in Figure 14 is faster.Yet, compare with structure shown in Figure 15, need a large amount of materials to form substrate with structure shown in Figure 14 such as AlN, BN or BeO.Simultaneously, be expensive such as the material of AlN, BN or BeO, and be difficult to process material such as AlN, BN or BeO.For this reason, preferably adopt structure shown in Figure 15.

The thermal conductivity of encapsulating structure shown in Figure 3 is higher than the thermal conductivity of the encapsulating structure shown in Figure 14 and 15.The thermal conductivity of encapsulation shown in Figure 3 is arranged to 25W/mK, and other condition is with above-described identical, when simulating, the thermal resistance between LED device and the metal PCB (not shown) is approximately 2.70 ℃/W.Yet according to encapsulating structure shown in Figure 14, the thermal resistance between LED device and the metal PCB (not shown) is respectively about 4.73 ℃/W and 3.67 ℃/W.In addition, according to encapsulating structure shown in Figure 15, the thermal resistance between LED device and the metal PCB (not shown) is respectively about 5.5 ℃/W and 3.8 ℃/W.

This means with Figure 14 and compare that encapsulating structure shown in Figure 3 can dispel the heat quickly with the encapsulating structure shown in 15.Yet as mentioned above, the problem that encapsulating structure shown in Figure 3 has is to be not suitable for to carry out eutectic bond or owing to the difference of thermal coefficient of expansion makes the LED device separately.Therefore, in fact, preferably do not adopt encapsulating structure shown in Figure 3.For this reason, preferably adopt the encapsulating structure shown in Figure 14 or 15, it is poor that it has thermal resistance slightly, but can guarantee that flatness and use have the material of identical with the LED device basically thermal coefficient of expansion.

Figure 18 is the equivalent circuit diagram according to the LED that the arranges encapsulation of arbitrary embodiment of the present invention.

Seven LED device L1 to L7 are provided between input terminal IN and the lead-out terminal OUT.Two LED device L1 and the L2 that connects that be one another in series is called as first group.Three LED device L3, L4 and the L5 that connects that be one another in series is called as second group.Two LED device L6 and the L7 that connects that be one another in series is called as the 3rd group.Group is connected in parallel with each other.LED device L1 to L7 can not be connected in parallel with each other with the form of organizing, but can be connected in parallel with each other respectively.

Rheostat VR is connected in parallel with first to the 3rd group LED device L1 to L7 between input terminal IN and lead-out terminal OUT.Zener diode can replace rheostat VR.

Noise removing circuit is provided between lead-out terminal OUT and the earth terminal GND.Noise removing circuit comprises capacitor C and the resistor R that is one another in series and connects.Alternatively, noise removing circuit can comprise inductor L and resistor R, perhaps can comprise inductor L and capacitor C.In addition, noise removing circuit can be provided between input terminal IN and the earth terminal GND.Preferably, resistor R is the resistor of for example finely tuning in the scope of 10 to 200 Ω.Alternatively, resistor R can be the fixed resistor with optimum resistance.

Figure 19 is the plane graph that encapsulates according to the LED that the equivalent circuit diagram based on shown in Figure 180 of arbitrary embodiment of the present invention is arranged.

In the LED of arrangement type encapsulation 100, seven zones that separate with honeycomb style are called as unit 110.Each unit 110 is LED encapsulation.Each unit 110 comprises LED device 32.The LED device 32 that provides in each unit 110 is main with fluorescent material and silicon next molded (coating).Can use epoxy resin to replace silicon.

The end of rheostat VR is connected to input terminal 112 (V+) by conductor 116.The other end of rheostat VR is connected to lead-out terminal 114 (V-) by conductor 116.

Annular Internal baffle 118 keeps the shape of each molded LED device 32 to have desired shape (for example hemisphere or flat cheese).

Annular outer baffle 120 is formed on around the LED device 32 of arrangement.Outer baffle 120 keeps the shape of molded LED device 32 to have desired shape on the whole.Silicon or epoxy resin are used for all LED devices 32 are molded as integral body.Internal baffle 118 and outer baffle 120 can have annular shape or polygon annular shape.In Figure 19, the Reference numeral 122 indication molding parts that are not described.

Reflecting plate is not shown in Figure 19.Yet reflecting plate can be provided in around the LED device 32 in each unit 110.Alternatively, all LED devices 32 are counted as a group, and reflecting plate can be provided in this group around.

Seven the LED devices 32 of in Figure 19, having demonstrated.The number of LED device 32 can increase or reduce.If the number of LED device 32 can increase or reduce, then the arrangement of LED device 32 can be revised as shown in figure 20.That is, can or revise the arrangement of LED device 32 with shape with shape with delegation shown in Figure 20 A and multiple row with multirow shown in Figure 20 B and multiple row.In addition, when the number of LED device was shown in Figure 20 C five, outer baffle can form had circle.In addition, when the number of LED device was shown in Figure 20 D seven, outer baffle can form had polygonal shape.

So long as determine the shape of the electronic part package of arrangement type under the situation of the optical characteristics of considering encapsulation, then the shape of the electronic part package of arrangement type is unessential.

Figure 21 is illustrated in the viewgraph of cross-section of arranging the part of three LED devices (Reference numeral L3, L4 and L5 among Figure 17) among Figure 19.Following ceramic bases 35 shown in Figure 21 is illustrated as following ceramic bases shown in Figure 14.Last ceramic bases 40 shown in Figure 21 is illustrated as last ceramic bases shown in Figure 14.In Figure 21, anode electrode 34 is illustrated as insulated from each other, and cathode electrode 36 is illustrated as insulated from each other.Yet in fact anode electrode 34 is connected to each other, and in fact cathode electrode 36 is connected to each other.Though metal level is not shown in Figure 21, preferably, metal level can be formed on down on the lower surface of ceramic bases 35, with adhesiveness and the thermal conductivity between ceramic bases 35 under improving and the metallic plate 130.

The metallic plate 130 that comprises a plurality of metal tab 132 is provided at down on the lower surface of ceramic bases 35.Metallic plate 130 has improved radiating efficiency.In addition, when forming a plurality of metal tab 132 with as shown in figure 22 wave shape, the surface area of metal tab 132 increases.As a result, can further improve radiating efficiency.

The maximum temperature of LED device 32 depends on the length of the length of volume, metallic plate 130 of following ceramic bases 35 and thickness and metal tab 132 and number etc. and changes.

The rheostat VR that prevents static and surge is embedded in down in the ceramic bases 35 or is surface mounted in down on the ceramic bases 35.The noise removing circuit of a plurality of LED device 32 caused noises of arranging on the upper surface of removal by ceramic bases 35 under driving is printed on down in the ceramic bases 35.The RC connecting-type is removed circuit as the noise removing circuit among Figure 21.Yet LC or RL connecting-type noise removing circuit can be used as noise removing circuit.In Figure 21, Reference numeral h1, h2 and h3 indicate the wherein through hole of filled conductive cream, and reference number C 1 electrode pattern that indication forms on different potsherds with C2.Arrange electrode pattern C1 and C2 in vertical direction.Two electrode pattern C1 and C2 form capacitor.In Figure 21, the resistance pattern that Reference numeral R indication forms on the potsherd different with C2 formation potsherd thereon with electrode pattern C1.The other end that the one end is connected to the through hole h3 of resistance pattern R is connected to down the grounding pattern (not shown) that forms on another potsherd in the ceramic bases 35.

In the foregoing description, electrode pattern C1 and C2 form capacitor, but electrode pattern C1 and C2 can form rheostat.In this case, have only the material of sheet to be changed.

As mentioned above, the circuit with desired function is printed on the potsherd, and in manufacture process by lamination, therefore, parts do not need to be installed in the substrate dividually.For this reason, can easily form the size that desired encapsulation also can reduce encapsulation.

Initial molded each LED device 32 of arranging.Initial molded part is called as molding part 140.Though not shown in Figure 21, the initial molded a plurality of LED devices 32 and the upper surface of last ceramic bases 40 are molded into the shape with lens subsequently.Initial molded in, come molded each LED device 32 with fluorescent material and silicon (or epoxy resin).In addition, in subsequently molded, use silicon or epoxy resin to come molded each LED device 32.

In Figure 21, metallic plate 130 and following ceramic bases 35 are bonded to each other so that contact with each other.The heat of distributing from a plurality of LED devices 32 promptly is dispersed into the outside by following ceramic bases 35 and the metallic plate 130 with high heat conductance.Metallic plate 130 suppresses because the deterioration of hot caused LED device 32 makes the chip life-span increase.In addition, the deterioration that metallic plate 130 suppresses such as the sealant of resin or silicon is so improved chip reliability.

The electronic part package of arrangement type shown in Figure 21 is made by following manufacture process.

1) metallic plate 130 is attached to substrate.(being called first process)

2) arrange a plurality of LED devices 32.(being called second process)

3) combined leads 42.(being called the 3rd process)

4) the LED device 32 in molded each unit.(being called the 4th process)

5) the LED device 32 with all unit is molded as integral body.(being called the 5th process)

Below schematic process will be described in further detail.Second to the 5th process comes sequentially to carry out according to this in proper order, can carry out first process at last then.

(first process)

At first, make metallic plate 130 and substrate.

Make metallic plate 130 by using matrix to wait.

In addition, make substrate as described in reference to Figure 14.The following ceramic bases 35 that last ceramic bases 40 and fin 46 are inserted into wherein is called as substrate.The process that is used to make down ceramic bases 35 comprises the process that is used for printing internal circuit pattern (for example pattern such as inductor, resistor, rheostat, capacitor, anode and negative electrode) on potsherd.When execution is used to print the process of internal circuit pattern, form RC connecting-type noise removing circuit shown in Figure 180.That is, shown in Figure 23 A, the electrode pattern that is used to form capacitor is respectively formed on the surface of different potsherd CS.In addition, shown in Figure 23 B, resistance pattern R is formed on another potsherd CS.The through hole (not shown) is formed among electrode pattern C1 and C2 and the resistance pattern R.In addition, electrode pattern C1 and C2 and resistance pattern R can have the shape shown in Figure 23 A and 23B, also can have other shape.

Metallic plate 130 is attached on the lower surface (promptly descending the lower surface of ceramic bases 35) of the substrate of making as mentioned above.Soldering paste or dielectric cream are used for metallic plate 130 and substrate are attached together.In this case, because metal can not directly be attached to pottery, so carry out the process of formation metal level on the lower surface of the upper surface of metallic plate 130 and following ceramic bases 35 in advance.That is, be formed on the lower surface of following ceramic bases 35 and after metal level was formed on the upper surface of metallic plate 130, soldering paste or dielectric cream were inserted between the contact surface of the metal level that will contact with each other, and carry out then and reflux at metal level.As a result, metallic plate 130 and following ceramic bases 35 firmly are attached to each other.Can form metal level with well-known technology.

(second process)

Eutectic bond method, the combined techniques that uses Ag cream or flip bonded method can be as the methods that the LED device is attached to cathode electrode 36.According to the eutectic bond method, under the temperature in comprising about 250 to 350 ℃ of scopes, the weight in about 40 to 80g scopes and the situation of the time in about 5 to 30ms scopes, the lower surface of each LED device 32 and each cathode electrode 36 be eutectic bond each other.According to the combined techniques that uses Ag cream, Ag cream is being applied to after LED device 32 is attached to part on it, each LED device 32 is attached to the Ag cream part of each negative electrode.Then, LED device and negative electrode are heated to temperature in about 120 to 180 ℃ of scopes.According to the flip bonded method, spherical protrusions is provided between the LED device installation region of LED device 32 and following ceramic bases 35, and carries out combination.When using the flip bonded method, do not need to carry out wire bond process as subsequent process.

(the 3rd process)

The LED device 32 that is attached to each cathode electrode 36 is electrically connected to corresponding anode electrode 34 and cathode electrode 36 by using lead-in wire 42.In addition because the electrode 34 of a unit and 36 with the electrode 34 and 36 of adjacent cells between serial or parallel connection to be connected be well-known to those skilled in the art, so the descriptions thereof are omitted.

(the 4th process)

After finishing wire bond, use fluorescent material and silicon (or epoxy resin) to come molded equably (coating) each LED device 32.That is, Internal baffle 118 be formed on each LED device 32 around after, fluorescent material and silicon (or epoxy resin) are injected in the Internal baffle 118 by distributor.In this case, the weight of the fluorescent material that be injected into is in 3 to 30wt% the scope, and the concentration of silicon or epoxy resin is about 2000cps.When the fluorescent material that use to inject or silicon (or epoxy resin) and molded molding part 140 when having desired shape (for example semi-spherical shape or flat domed shape etc.), stop the injection of fluorescent material and silicon (or epoxy resin), and under 150 ℃ temperature with the hardened material that injects three hours.Therefore, finish the shape of molding part 140.The concentration of the weight of fluorescent material above-mentioned, silicon or epoxy resin and hardening temperature and time only are examples.Therefore, above-mentioned condition does not need necessarily to be satisfied, and can change condition in case of necessity.

(the 5th process)

When finishing the 4th process initial molded, the LED device 32 of all unit is molded as integral body by using outer baffle 24.

That is, in substrate, form outer baffle 120, and silicon or epoxy resin with high viscosity are injected in the interior section of outer baffle 120 by distributor.

When silicon that use to inject or epoxy resin molded molding part 122 had when it obtains the anticipated shape (for example shape of lens) at desired orientation angle, stop the injection of silicon or epoxy resin, and the material that injects of sclerosis.Therefore, on the upper surface (being whole surface) of encapsulation, finish molding part 122 with lens shape.The method of molded above-mentioned molding part 122 is injection moldings.The transfer moulding method of use powder can be as the method for molded described molding part 122.

As mentioned above, because the LED of array type encapsulates by using first to the 5th process to make, so the heat from a plurality of led chips can be dispersed into the outside effectively.

In addition, the semiconductor device of removal static and surge is embedded in the substrate with the circuit of removing noise or is surface mounted in the substrate.As a result, can be farthest reducing the size of encapsulation, and the semiconductor packages of its static, surge and the removed arrangement type of noise can be provided.

In addition because silicon or epoxy coating on the upper surface of substrate so that have the shape of lens, so do not need separately lens or independent lens.

As mentioned above, because by adopting the LED encapsulation that can form array type as shown in figure 21 according to any one encapsulation among first to the 8th embodiment, so be understood that easily, the LED encapsulation of array type falls in the scope and border of claim, and not be used in the claim open specially.

Therefore scope of the present invention is not limited to the foregoing description, drops in the scope of claim and the boundary or drops on that institute in the equivalent of this scope and boundary changes and modification is intended to be covered by claim.

Claims (12)

1. electronic part package comprises:

Luminescent device;

Substrate, it has described luminescent device luminescent device installation region mounted thereto; And

Thermal component, it is embedded under the described luminescent device installation region of described substrate, so that separate with described luminescent device installation region in vertical direction, described thermal component is exposed to the lower surface of described substrate.

2. electronic part package according to claim 1, wherein,

Heat transfer component is formed between described luminescent device installation region and the described thermal component.

3. electronic part package according to claim 2, wherein,

Described heat transfer component has the thermal conductivity higher than the thermal conductivity of described substrate.

4. electronic part package according to claim 3, wherein,

Described heat transfer component forms in vertical direction, so that have the cross sectional dimensions more than or equal to the cross sectional dimensions of described luminescent device.

5. electronic part package according to claim 3, wherein,

Described heat transfer component forms in vertical direction, so that have the cross sectional dimensions greater than the surface area of described luminescent device, and is divided into a plurality of zones, and

Zone that has more than or equal to the diameter of the size of described luminescent device in described a plurality of zone is provided under the described luminescent device.

6. electronic part package according to claim 3, wherein,

Described heat transfer component is formed by ceramic lamella.

7. electronic part package according to claim 3, wherein,

Described heat transfer component is made by diamond.

8. electronic part package according to claim 7, wherein,

Described thermal component is made by diamond.

9. electronic part package according to claim 1, wherein,

Described substrate comprises the cavity around described luminescent device installation region,

Reflector is formed on the inner surface of described cavity,

Described reflector is connected at least one in the pattern electrode that forms in the described substrate, and

Described pattern electrode is electrically connected to described luminescent device.

10. electronic part package according to claim 9, wherein,

The pattern electrode that forms in the described described pattern electrode that is connected with reflector and the described luminescent device installation region separates.

11. electronic part package according to claim 2, wherein,

Described luminescent device is formed by the LED device.

12. electronic part package according to claim 1 also comprises:

The rheostat material layer, it is formed in the described substrate;

Electrodes in first and second, it is formed in the described substrate, and electrodes insert therebetween mode with described rheostat material layer and partly overlapping each other in described first and second; And

First and second external electrodes, it is provided in the described substrate so that be separated from each other, and described the first external electrode is electrically connected to electrode in described first, and described the second external electrode is electrically connected to described the second inner electrode.

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