CN101315962A - LED device and its preparing process - Google Patents
LED device and its preparing process Download PDFInfo
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- CN101315962A CN101315962A CNA2007101064104A CN200710106410A CN101315962A CN 101315962 A CN101315962 A CN 101315962A CN A2007101064104 A CNA2007101064104 A CN A2007101064104A CN 200710106410 A CN200710106410 A CN 200710106410A CN 101315962 A CN101315962 A CN 101315962A
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Abstract
The invention discloses a light emitting diode (LED) device, comprising an external extension lamination layer, a micro-nanometer coarsening structure layer and an anti-reflection layer; the external extension lamination layer is sequentially provided with a first semiconductor layer, a luminescence layer and a second semiconductor layer. The micro-nanometer coarsening structure layer is arranged on the first semiconductor layer of the external extension lamination layer. The anti-reflection is arranged on the micro-nanometer coarsening structure. Furthermore, the invention also discloses a manufacture method of the LED device.
Description
Technical field
The present invention is about a kind of light-emitting diode assembly and manufacture method thereof with current-diffusion layer of micro nano structure.
Background technology
(light-emitting diode, LED) device is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode assembly belongs to chemiluminescence, have advantages such as power consumption is low, component life is long, reaction speed is fast, add the little element of making minimum or array easily of volume, therefore, along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic sign or the automobile-used indicator light of liquid crystal indicator in recent years.
Yet present light-emitting diode assembly still has the problem that luminous efficiency is not good and brightness is on the low side.Wherein cause the not good reason of luminous efficiency, be that the light that the reason light-emitting diode is launched is isotropic directivity, and be not single the focusing in the light beam in somewhere.In addition, the light that light-emitting diode is launched only has part to be penetrated, and remaining light then can be absorbed because of reflection, thus, except the brightness that reduces light-emitting diode assembly, has also increased the heat energy that it produced.
Generally speaking, light-emitting diode assembly can be different aspects such as upside-down mounting chip, rectilinear or positive formula.Reduce the problem of light extraction efficiency because of reflection in order to solve.Please refer to Fig. 1, with the vertical LED device is example, light-emitting diode assembly 1 forms n N-type semiconductor N doped layer 121, luminescent layer (active layer) 122 and p N-type semiconductor N doped layer 123 in regular turn on the surface of substrate 11, then, on p N-type semiconductor N doped layer 123, form current-diffusion layer 13 again, and respectively on current-diffusion layer 13 and another surface of substrate 11 first electrode 14 and second electrode 15 are set.
In said structure, because the light that luminescent layer 122 is sent needs through penetrating light-emitting diode assembly 1 after second semiconductor layer 123 and the current-diffusion layer 13, and because the refractive index of second semiconductor layer 123, current-diffusion layer 13 and air there is no suitable coupling, therefore can cause light in the process that penetrates, total reflection to take place, thereby reduce light extraction efficiency.
Help because of in this, how to provide a kind of and can effectively reduce the light total reflection to increase the light-emitting diode assembly and the manufacture method thereof of light extraction efficiency, real one of the current important topic that belongs to.
Summary of the invention
Because above-mentioned problem, purpose of the present invention can reduce the light total reflection for providing a kind of, and can make equally distributed light-emitting diode assembly of electric current and manufacture method thereof.
Therefore, for reaching above-mentioned purpose, the invention provides a kind of light-emitting diode assembly and comprise extension lamination, micro-nano alligatoring structure sheaf and anti-reflecting layer.Extension lamination has first semiconductor layer, luminescent layer and second semiconductor layer in regular turn.Micro-nano alligatoring structure sheaf is arranged on first semiconductor layer of extension lamination.Anti-reflecting layer is arranged on the micro-nano alligatoring structure sheaf.
For reaching above-mentioned purpose, the present invention more provides a kind of manufacturing method for LED, and it may further comprise the steps: form first semiconductor layer on epitaxial substrate; On first semiconductor layer, form luminescent layer; Form second semiconductor layer on luminescent layer, wherein first semiconductor layer, luminescent layer and second semiconductor layer constitute extension lamination; On first semiconductor layer of extension lamination, form micro-nano alligatoring structure sheaf; And on micro-nano alligatoring structure sheaf, form anti-reflecting layer.
As above-mentioned light-emitting diode and manufacture method thereof, the refractive index of wherein micro-nano alligatoring structure sheaf is between the refractive index of the refractive index of extension lamination and air, and the refractive index of anti-reflecting layer is between the refractive index of the refractive index of micro-nano alligatoring structure sheaf and air.Anti-reflecting layer is made up of a plurality of micro-and nano-particles, and the particle diameter of each micro-and nano-particles is between 50 nanometers to 50 micron.
From the above, light-emitting diode of the present invention and manufacture method thereof utilize micro-nano alligatoring structure sheaf and anti-reflecting layer to reduce the total reflection loss, reach refractive index match by it simultaneously, to increase the light extraction efficiency of light-emitting diode assembly.
Description of drawings
Fig. 1 is the schematic diagram of known a kind of light-emitting diode assembly.
Fig. 2 is the flow chart according to the manufacture method of the light-emitting diode assembly of first embodiment of the invention.
Fig. 3 A to Fig. 3 K is the schematic diagram of the light-emitting diode assembly that cooperates with Fig. 2.
Fig. 4 is the flow chart according to the manufacture method of the light-emitting diode assembly of second embodiment of the invention.
Fig. 5 A to Fig. 5 G is the schematic diagram of the light-emitting diode assembly that cooperates with Fig. 4.
Description of reference numerals
1,2,2 ', 3,3 ': light-emitting diode assembly
11: substrate
121:N type doped layer
122,212,312: luminescent layer
123:P type doped layer
13: transparency conducting layer
14,271,371: the first electrodes
15,272,372: the second electrodes
20,30: epitaxial substrate
21: extension lamination
211,311: the first semiconductor layers
213,313: the second semiconductor layers
22,32: current-diffusion layer
23,33: the reflector
24: the heat conductive insulating layer
25,35: heat conduction sticking layer
26,36: heat-conducting substrate
271,371: the first electrodes
272,372: the second electrodes
29,39: anti-reflecting layer
28,38: micro-nano alligatoring structure sheaf
Embodiment
Hereinafter with reference to correlative type, light-emitting diode assembly and manufacture method thereof according to the preferred embodiment of the present invention are described.
[first embodiment]
Please refer to shown in Figure 2ly, according to the manufacture method of the light-emitting diode assembly of first embodiment of the invention, it comprises that step S10 is to step S19.Below please be simultaneously with reference to Fig. 3 A to Fig. 3 K.
As shown in Figure 3A, step S10 is forming first semiconductor layer 211, forming luminescent layer 212 on first semiconductor layer 211 on the epitaxial substrate 20, and forms second semiconductor layer 213 on luminescent layer 212.Wherein, first semiconductor layer 211, luminescent layer 212 and second semiconductor layer 213 constitute extension lamination 21.In the present embodiment, first semiconductor layer 211 and second semiconductor layer 213 can be respectively P type epitaxial loayer and N type epitaxial loayer, and it is also interchangeable certainly, is not limited at this.
Shown in Fig. 3 B, step S11 forms current-diffusion layer 22 on second semiconductor layer 213.In the present embodiment, the material of current-diffusion layer 22 can be indium tin oxide (Indium tin oxide, ITO), Al-Doped ZnO (aluminum doped zinc oxide, AZO), zinc oxide (ZnO), nickel/gold (Ni/Au) or antimony tin, do not limited at this, with even dissufion current for preferentially considering.
Shown in Fig. 3 C, step S12 forms reflector 23 on current-diffusion layer 22.In the present embodiment, reflector 23 can be metallic reflector, except that having the reflection effect, also can provide good thermally conductive pathways, its material can be selected from the group that platinum, gold, silver, palladium, nickel, chromium, titanium, chromium/gold, nickel/gold, titanium/gold, titanium/silver, chromium/platinum/gold and combination thereof are constituted.In addition, reflector 23 can serve as reasons optical reflection element, metallic reflector, metal and dielectric reflector that dielectric medium film with high low-refraction formed or the optical reflection element of being made up of micro-nano ball, meaning are that reflector 23 can or be piled up by multiple combination of materials and formed.
Shown in Fig. 3 D, step S13 forms heat conductive insulating layer 24 on reflector 23.In the present embodiment, the material of heat conductive insulating layer 24 is the insulating material of the coefficient of heat conduction more than or equal to 150W/mK (watts/meter Degree Kelvin), for example is aluminium nitride or carborundum etc.In addition, the refractive index of heat conductive insulating layer 24 is between the refractive index of the refractive index of extension lamination 21 and air.
Shown in Fig. 3 E, step S14 combines by heat conduction sticking layer 25 heat-conducting substrate 26 with heat conductive insulating layer 24.In the present embodiment, the material of heat conduction sticking layer 25 can be simple metal, alloying metal, electric conducting material, non-conducting material or organic material, and it can be selected from gold, tin cream, tin silver paste, silver paste and group that combination constituted thereof.In addition, in the present embodiment, the material of heat-conducting substrate 26 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
Shown in Fig. 3 F, step S15 overturns at the formed light-emitting diode assembly 2 of step S14, and removes epitaxial substrate 20.
Shown in Fig. 3 G, step S16 removes the extension lamination 21 of part, anticipates promptly, and it removes first semiconductor layer 211 of part, the luminescent layer 212 of part and second semiconductor layer 213 of part, to expose the current-diffusion layer 22 of part.
Shown in Fig. 3 H, first semiconductor layer 212 that step S17 forms first electrode 271 and part electrically connects, and forms second electrode 272 and current-diffusion layer 22 electric connections that are exposed to first semiconductor layer 211, luminescent layer 212 and second semiconductor layer 213.
Step S18 on first semiconductor layer 211 of another part to form micro-nano alligatoring structure sheaf 28 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer).Wherein micro-nano alligatoring structure sheaf 28 can be nanosphere, nano-pillar, nano aperture, nano dot, nano wire or nano concavo-convex structure.In the present embodiment, the refractive index of micro-nano alligatoring structure 28 is greater than the refractive index (being about 1) of air, and less than the refractive index (being about 2.5) of extension lamination 31, and the material of micro-nano alligatoring structure 28 can be selected from alundum (Al (Al
2O
3), silicon nitride (Si
3N
4), tin ash (SnO
2), silicon dioxide (SiO
2), the group that constituted of resin, Merlon (polycarbonate) and combination thereof.What need pay special attention to is that micro-nano alligatoring structure sheaf 28 can be to be formed in addition on first semiconductor layer 211, shown in Fig. 3 I.Perhaps, micro-nano alligatoring structure sheaf 28 can be directly to be shaped in first semiconductor layer 211, shown in Fig. 3 J.
In addition, shown in Fig. 3 K, step S19 more forms anti-reflecting layer 29 on micro-nano alligatoring structure sheaf 28, to constitute positive formula light-emitting diode assembly 2 '.What need pay special attention to is, Fig. 3 K is an example with the micro-nano alligatoring structure sheaf 28 shown in Fig. 3 I, and certainly, step S19 can also be to be example with the micro-nano alligatoring structure sheaf 28 shown in Fig. 3 J.In the present embodiment, anti-reflecting layer 29 is made up of a plurality of micro-and nano-particles, and the particle diameter of each micro-and nano-particles is between between 50 nanometers to 50 micron.In addition, the refractive index of anti-reflecting layer is between the refractive index of the refractive index of micro-nano alligatoring structure sheaf and air.Simultaneously, anti-reflecting layer 29 can be the formed structure of dielectric medium film of single or multiple lift.
What deserves to be mentioned is that above-mentioned steps is not limited in this order, it can carry out the transposing of step according to the needs of technology.
[second embodiment]
Please refer to shown in Figure 4ly, according to the manufacture method of the light-emitting diode assembly (being vertical LED) of second embodiment of the invention, it comprises that step S20 is to step S27.Below please be simultaneously with reference to shown in Fig. 5 A to Fig. 5 G.
Shown in Fig. 5 A, step S20 forms extension lamination 31 on epitaxial substrate 30, and extension lamination 31 is made up of first semiconductor layer 311, luminescent layer 312 and second semiconductor layer 313 in regular turn.Wherein, in the present embodiment, first semiconductor layer 311 and second semiconductor layer 213 can be respectively P type epitaxial loayer and N type epitaxial loayer, and it is also interchangeable certainly, is not limited at this.
Shown in Fig. 5 B, the result behind demonstration implementation step S21～S23.Step S21 forms current-diffusion layer 32 on second semiconductor layer 313.In the present embodiment, the material of current-diffusion layer 32 can be indium tin oxide (Indium tin oxide, ITO), Al-Doped ZnO (aluminum doped zincoxide, AZO), zinc oxide (ZnO), nickel/gold (Ni/Au) or antimony tin, do not limited at this, with even dissufion current for preferentially considering.
Step S22 forms reflector 33 on current-diffusion layer 32.In the present embodiment, reflector 33 can be metallic reflector, except that having the reflection effect, also can provide good thermally conductive pathways, its material can be selected from the group that platinum, gold, silver, palladium, nickel, chromium, titanium, chromium/gold, nickel/gold, titanium/gold, titanium/silver, chromium/platinum/gold and combination thereof are constituted.And reflector 33 can or be piled up by multiple combination of materials and be formed.
Step S23 combines by heat conduction sticking layer 35 heat-conducting substrate 36 with reflector 33.In the present embodiment, the material of heat conduction sticking layer 35 can be simple metal, alloying metal, electric conducting material, non-conducting material or organic material, and it can be selected from gold, tin cream, tin silver paste, silver paste and group that combination constituted thereof.In addition, in the present embodiment, the material of heat-conducting substrate 36 can be selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
Then, shown in Fig. 5 C, step S24 overturns at the formed light-emitting diode assembly 3 of step S23, and removes epitaxial substrate 30.
Shown in Fig. 5 D, step S25 is provided with first electrode 371 on first semiconductor layer 311 of part, and with respect to the surface 361 of heat conduction sticking layer 35 second electrode 372 is set in heat-conducting substrate 36.
Shown in Fig. 5 E, step S26 on first semiconductor layer 311 of another part to form micro-nano alligatoring structure sheaf 38 such as but not limited to piling up technology, sintering process, anodised aluminium technology (AAO), nano-imprint process, heat pressing process, etch process or electron beam exposure technology (E-beam writer).Wherein micro-nano alligatoring structure sheaf 38 can be nanosphere, nano-pillar, nano aperture, nano dot, nano wire or nano concavo-convex structure.In the present embodiment, the refractive index of micro-nano alligatoring structure 38 is greater than the refractive index (being about 1) of air, and less than the refractive index (being about 2.5) of extension lamination 31.And the material of micro-nano alligatoring structure 28 can be selected from alundum (Al (Al
2O
3), silicon nitride (Si
3N
4), tin ash (SnO
2), silicon dioxide (SiO
2), the group that constituted of resin, Merlon (polycarbonate) and combination thereof.What need pay special attention to is that micro-nano alligatoring structure sheaf 38 can be to be formed in addition on first semiconductor layer 311, shown in Fig. 5 E.Perhaps, micro-nano alligatoring structure sheaf 38 can be directly to be shaped in first semiconductor layer 311, shown in Fig. 5 F.
In addition, shown in Fig. 5 G, step S27 more forms anti-reflecting layer 39 on micro-nano alligatoring structure sheaf 38, to constitute vertical LED device 3 '.What need pay special attention to is, Fig. 5 G is an example with the micro-nano alligatoring structure sheaf 38 shown in Fig. 5 E, and certainly, step S27 can also be to be example with the micro-nano alligatoring structure sheaf 38 shown in Fig. 5 F.In the present embodiment, anti-reflecting layer 39 is made up of a plurality of micro-and nano-particles, and the particle diameter of each micro-and nano-particles is between between 50 nanometers to 50 micron.In addition, the refractive index of anti-reflecting layer is between the refractive index of the refractive index of micro-nano alligatoring structure sheaf and air.Simultaneously, anti-reflecting layer 29 can be the formed structure of dielectric medium film of single or multiple lift.
What this need pay special attention to be, each step be not limited in above-mentioned order, it can carry out the transposing of step according to the needs of technology.
In sum,, utilize micro-nano alligatoring structure sheaf and anti-reflecting layer to reduce the total reflection loss, reach refractive index match by it simultaneously, to increase the light extraction efficiency of light-emitting diode assembly because of according to light-emitting diode of the present invention and manufacture method thereof.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the appended claim its equivalent modifications of carrying out or change.
Claims (19)
1, a kind of light-emitting diode assembly comprises:
Extension lamination has first semiconductor layer, luminescent layer and second semiconductor layer in regular turn; And
Micro-nano alligatoring structure sheaf is arranged on this first semiconductor layer of this extension lamination;
Wherein the refractive index of this micro-nano alligatoring structure sheaf is between the refractive index of the refractive index of this extension lamination and air.
2, light-emitting diode assembly as claimed in claim 1 also comprises anti-reflecting layer, and it is arranged on this micro-nano alligatoring structure sheaf, and the refractive index of this anti-reflecting layer is between the refractive index of the refractive index of this micro-nano alligatoring structure sheaf and air.
3, light-emitting diode assembly as claimed in claim 2, wherein this anti-reflecting layer comprises a plurality of micro-and nano-particles, wherein whenever the particle diameter of this micro-and nano-particles between 50 nanometers to 50 micron; Perhaps, this anti-reflecting layer can be the structure of the dielectric medium film formation of single or multiple lift.
4, light-emitting diode assembly as claimed in claim 2, wherein this first semiconductor layer is P type epitaxial loayer or N type epitaxial loayer, and this second semiconductor layer is N type epitaxial loayer or P type epitaxial loayer.
5, light-emitting diode assembly as claimed in claim 2, wherein this micro-nano alligatoring structure sheaf and this first semiconductor layer are formed in one, or different each other two layers.
6, light-emitting diode assembly as claimed in claim 2, wherein this micro-nano alligatoring structure sheaf comprises nanosphere, nano-pillar, nano aperture, nano dot, nano wire or nano concavo-convex structure at least, and perhaps the material of this micro-nano alligatoring structure sheaf is selected from alundum (Al, silicon nitride, tin ash, silicon dioxide, resin, Merlon, indium tin oxide, Al-Doped ZnO, zinc oxide and group that combination constituted thereof.
7, light-emitting diode assembly as claimed in claim 2 also comprises:
Heat-conducting substrate is relative with this second semiconductor layer and establish;
Heat conduction sticking layer is arranged between this heat-conducting substrate and this second semiconductor;
The reflector is arranged between this heat conduction sticking layer and this second semiconductor layer; And
Current-diffusion layer is arranged between this reflector and this second semiconductor layer.
8, light-emitting diode assembly as claimed in claim 7, some of these first semiconductor layers are exposed to this micro-nano alligatoring structure sheaf and this anti-reflecting layer, and this light-emitting diode assembly also comprises:
First electrode electrically connects with this first semiconductor layer that is exposed to this micro-nano alligatoring structure sheaf and this anti-reflecting layer; And
Second electrode electrically connects with this heat-conducting substrate.
9, light-emitting diode assembly as claimed in claim 7, also comprise the heat conductive insulating layer, it is arranged between this heat conduction sticking layer and this reflector, some of these first semiconductor layers are exposed to this micro-nano alligatoring structure sheaf and this anti-reflecting layer, or the part this second semiconductor layer be exposed to this luminescent layer, this first semiconductor layer, this micro-nano alligatoring structure sheaf and this anti-reflecting layer and this light-emitting diode assembly, also comprise:
First electrode electrically connects with this first semiconductor layer that is exposed to this micro-nano alligatoring structure sheaf and this anti-reflecting layer; And
Second electrode electrically connects with this second semiconductor layer that is exposed to this luminescent layer, this first semiconductor layer, this micro-nano alligatoring structure sheaf and this anti-reflecting layer.
10, light-emitting diode assembly as claimed in claim 9, wherein the material of this heat conductive insulating layer is the insulating material of the coefficient of heat conduction more than or equal to 150 watts/meter Degree Kelvins, as aluminium nitride or carborundum.
11, a kind of manufacture method of light-emitting diode assembly comprises:
On epitaxial substrate, form first semiconductor layer;
On this first semiconductor layer, form luminescent layer;
Form second semiconductor layer on this luminescent layer, wherein this first semiconductor layer, this luminescent layer and this second semiconductor layer constitute extension lamination; And
On this first semiconductor layer of this extension lamination, form micro-nano alligatoring structure sheaf;
Wherein the refractive index of this micro-nano alligatoring structure sheaf is between the refractive index of the refractive index of this extension lamination and air.
12, manufacture method as claimed in claim 11, after forming this micro-nano alligatoring structure sheaf, further comprising the steps of:
On this micro-nano alligatoring structure sheaf, form anti-reflecting layer;
Wherein the refractive index of this anti-reflecting layer is between the refractive index of the refractive index of this micro-nano alligatoring structure sheaf and air, and this anti-reflecting layer comprises a plurality of micro-and nano-particles, and wherein the particle diameter of each this micro-and nano-particles is between 50 nanometers to 50 micron; Perhaps, this anti-reflecting layer can be the formed structure of dielectric medium film of single or multiple lift.
13, manufacture method as claimed in claim 12, wherein this micro-nano alligatoring structure sheaf forms to pile up technology, sintering process, anodised aluminium technology, nano-imprint process, heat pressing process, etch process or electron beam exposure technology.
14, manufacture method as claimed in claim 12, it is further comprising the steps of:
On this second semiconductor layer, form current-diffusion layer; And
On this current-diffusion layer, form the reflector;
Wherein the material of this current-diffusion layer is indium tin oxide, Al-Doped ZnO, zinc oxide, nickel/gold or antimony tin, the material in this reflector is selected from the group that platinum, gold, silver, palladium, nickel, chromium, titanium, chromium/gold, nickel/gold, titanium/gold, titanium/silver, chromium/platinum/gold and combination thereof are constituted, perhaps serve as reasons optical reflection element, metallic reflector, metal and dielectric reflector that dielectric medium film with high low-refraction formed or the optical reflection element of being made up of micro-nano ball of this reflector.
15, manufacture method as claimed in claim 14, it is further comprising the steps of:
Heat-conducting substrate is combined with this reflector by heat conduction sticking layer; And
This light-emitting diode assembly overturns;
Wherein this heat-conducting substrate is electrically-conductive backing plate or insulated substrate, and the material of this heat-conducting substrate is selected from silicon, GaAs, gallium phosphide, carborundum, boron nitride, aluminium, aluminium nitride, copper and group that combination constituted thereof.
16, manufacture method as claimed in claim 15, wherein the material of this heat conduction sticking layer is selected from gold, tin cream, tin silver paste, silver paste and group that combination constituted thereof, and perhaps the material of this heat conduction sticking layer is simple metal, alloying metal, electric conducting material, non-conducting material or organic material.
17, manufacture method as claimed in claim 15, it also comprises:
Remove this epitaxial substrate;
On this first semiconductor layer of part, first electrode is set; And
With respect to the surface of this heat conduction sticking layer second electrode is set at this heat-conducting substrate;
Wherein this micro-nano alligatoring structure sheaf is arranged on this first semiconductor layer of another part.
18, manufacture method as claimed in claim 14, it is further comprising the steps of:
On this reflector, form the heat conductive insulating layer;
Heat-conducting substrate is combined with this heat conductive insulating layer by heat conduction sticking layer; And
This light-emitting diode assembly overturns.
19, manufacture method as claimed in claim 18, it is further comprising the steps of:
Remove this epitaxial substrate;
Remove the extension lamination of part, to expose this current-diffusion layer of part;
On this first semiconductor layer of part, first electrode is set; And
On this current-diffusion layer of the part that is exposed to this extension lamination, second electrode is set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101064104A CN101315962A (en) | 2007-05-29 | 2007-05-29 | LED device and its preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101064104A CN101315962A (en) | 2007-05-29 | 2007-05-29 | LED device and its preparing process |
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| CN101315962A true CN101315962A (en) | 2008-12-03 |
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ID=40106871
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| CNA2007101064104A Pending CN101315962A (en) | 2007-05-29 | 2007-05-29 | LED device and its preparing process |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412349A (en) * | 2010-09-17 | 2012-04-11 | 柏光照明股份有限公司 | Semiconductor light-emitting component and fabrication method thereof |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN103098240A (en) * | 2010-07-08 | 2013-05-08 | 首尔Opto仪器股份有限公司 | Light-emitting device having an MgO pyramid structure and manufacturing method for same |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate, preparation method thereof and organic electroluminescent device |
| CN105529384A (en) * | 2014-10-21 | 2016-04-27 | 首尔伟傲世有限公司 | Light emitting device |
| CN104241482B (en) * | 2013-06-20 | 2017-02-08 | 山东浪潮华光光电子股份有限公司 | LED pipe core with ITO nanorod net-shaped thin films and method for preparing LED pipe core |
| CN110165032A (en) * | 2019-05-24 | 2019-08-23 | 厦门乾照光电股份有限公司 | A kind of preparation method of diode chip for backlight unit and diode chip for backlight unit |
| CN111710766A (en) * | 2020-06-19 | 2020-09-25 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with composite antireflection film with adjustable refractive index |
| CN113076785A (en) * | 2020-01-06 | 2021-07-06 | 广州印芯半导体技术有限公司 | Optical sensing system and nanostructure layer |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098240A (en) * | 2010-07-08 | 2013-05-08 | 首尔Opto仪器股份有限公司 | Light-emitting device having an MgO pyramid structure and manufacturing method for same |
| CN103098240B (en) * | 2010-07-08 | 2015-09-23 | 首尔伟傲世有限公司 | There is light-emitting device and the manufacture method thereof of MgO pyramidal structure |
| CN102412349A (en) * | 2010-09-17 | 2012-04-11 | 柏光照明股份有限公司 | Semiconductor light-emitting component and fabrication method thereof |
| CN102487115A (en) * | 2010-12-03 | 2012-06-06 | 新世纪光电股份有限公司 | Light emitting diode |
| CN102487115B (en) * | 2010-12-03 | 2014-11-19 | 新世纪光电股份有限公司 | Light emitting diode |
| CN104241482B (en) * | 2013-06-20 | 2017-02-08 | 山东浪潮华光光电子股份有限公司 | LED pipe core with ITO nanorod net-shaped thin films and method for preparing LED pipe core |
| CN104167240A (en) * | 2014-06-13 | 2014-11-26 | 南方科技大学 | Transparent conductive substrate, preparation method thereof and organic electroluminescent device |
| CN105529384A (en) * | 2014-10-21 | 2016-04-27 | 首尔伟傲世有限公司 | Light emitting device |
| CN105529384B (en) * | 2014-10-21 | 2019-04-09 | 首尔伟傲世有限公司 | Luminaire |
| CN110165032A (en) * | 2019-05-24 | 2019-08-23 | 厦门乾照光电股份有限公司 | A kind of preparation method of diode chip for backlight unit and diode chip for backlight unit |
| CN113076785A (en) * | 2020-01-06 | 2021-07-06 | 广州印芯半导体技术有限公司 | Optical sensing system and nanostructure layer |
| CN111710766A (en) * | 2020-06-19 | 2020-09-25 | 中国工程物理研究院电子工程研究所 | Visible light LED chip with composite antireflection film with adjustable refractive index |
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