CN101312226B - Luminous diode base structure possessing horizontal heat diffusion member - Google Patents
Luminous diode base structure possessing horizontal heat diffusion member Download PDFInfo
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- CN101312226B CN101312226B CN2007101061430A CN200710106143A CN101312226B CN 101312226 B CN101312226 B CN 101312226B CN 2007101061430 A CN2007101061430 A CN 2007101061430A CN 200710106143 A CN200710106143 A CN 200710106143A CN 101312226 B CN101312226 B CN 101312226B
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Abstract
The invention relates to a light emitting diode seat structure with a horizontal thermal diffusion member, comprising a seat body and a horizontal thermal diffusion member. The seat body is a co-fired multilayer ceramic base material with a first surface and a second surface, and the first surface and the second surface are respectively provided with a first heat conducting layer and a second heat conducting layer. Heat conducting bodies which are longitudinally and transversely mutually interlaced and connected are arranged in the seat body, and the heat conducting bodies are respectively in heat-conducting combination with the first heat conducting layer and the second heat conducting layer. The horizontal thermal diffusion member is provided with a first contact surface and a second contact surface, wherein the first contact surface and the second contact surface are in heat-conducting combination. By the longitudinal and transverse arrangement of the heat conducting bodies inside the seat body, heat energy generated by the light emitting diode can be acceleratively conducted to the horizontal thermal diffusion member, and then the heat energy is conducted out of the light emitting diode seat body via the horizontal thermal diffusion member. The light emitting diode seat structure combining the seat body and the horizontal thermal diffusion member can enable the seat structure to have better heat conducting efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting diode base structure, particularly relate to and a kind ofly can improve the light-emitting diode base structure with horizontal heat diffusion member of light-emitting diode heat transfer efficiency base structure in order to carry a light-emitting diode,
Background technology
Seeing also shown in Figure 1ly, is the cutaway view of the light-emitting diode base structure 10 of prior art.More extensive for the application that makes light-emitting diode 14, and then can be applicable in the daily life, so the main target that the luminous efficiency that improves light-emitting diode 14 is made great efforts for industry now.Because the input power major part of light-emitting diode 14 all converts heat energy at present, and fail effectively to convert to luminous energy, so if can improve the heat conduction and heat radiation speed of light-emitting diode base structure 10, the ratio that makes light-emitting diode 14 input powers convert luminous energy to improves, and can promote the luminous efficiency of light-emitting diode 14.
United States Patent (USP) announces the 7th, 098, and No. 483, disclosed a kind of light-emitting diode base structure 10 that operates under the high temperature, it comprises a metal substrate 13, one a low temperature co-fired multilayer ceramic substrate 11 and a light-emitting diode 14.One hot link plate and pair of electrodes is arranged at the below of metal substrate 13 respectively.On metal substrate 13, be provided with low temperature co-fired multilayer ceramic substrate 11.The wafer of light-emitting diode 14 can be consolidated brilliant on low temperature co-fired multilayer ceramic substrate 11 or metal substrate 13.The heat energy of light-emitting diode 14 can be coupled to the hot link plate by metal substrate 13, add and be provided with heat carrier 12 longitudinally in the light-emitting diode base structure 10, it can conduct to the heat of light-emitting diode 14 the hot link plate of metal substrate 13 belows fast, make heat can quicken to conduct, and make light-emitting diode 14 operate under the high temperature.
In structure as shown in Figure 1, in low temperature co-fired multilayer ceramic substrate 11, be provided with vertically a plurality of heat carriers 12, the heat conduction approach longitudinally that provides is provided, but because heat carrier 12 conducts heat to after the metal substrate 13 longitudinally, can cause thermal capacitance easily to concentrate on the single-point of metal substrate 13, make heat skewness on metal substrate 13, because the thermal source concentrations, thereby had a strong impact on heat conduction, the radiating rate of light-emitting diode base structure 10.
Above-mentioned prior art because have only the setting of vertical heat carrier 12 in the pedestal of light-emitting diode base structure 10, makes that thermal source conduction in the horizontal direction is not good, therefore also can't promote the speed of heat radiation.Because the wattage of light-emitting diode 14 constantly promotes, so that the heat energy that light-emitting diode 14 produces constantly increases, thereafter light-emitting diode base structure 10 all requires be able to carry the light-emitting diode 14 of higher wattage, so if use existing known light-emitting diode base structure 10 can't carry the light-emitting diode 14 of higher wattage.
This shows that above-mentioned existing light-emitting diode base structure obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new light-emitting diode base structure with horizontal heat diffusion member, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light-emitting diode base structure exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge thereof, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new light-emitting diode base structure with horizontal heat diffusion member, can improve general existing light-emitting diode base structure, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective that existing light-emitting diode base structure exists, and a kind of new light-emitting diode base structure with horizontal heat diffusion member is provided, technical problem to be solved is to make it have kx by horizontal heat carrier and horizontal heat diffusion member in the pedestal, (k is the coefficient of heat conduction to ky＞kz, x, y, z be three of rectangular coordinate system axially) characteristic, and can increase hot horizontal conductive ability, and then can improve heat conduction, the radiating rate of light-emitting diode, be very suitable for practicality.
The object of the invention to solve the technical problems is to adopt following technical scheme to realize.A kind of light-emitting diode base structure according to the present invention's proposition with horizontal heat diffusion member, in order to carry a light-emitting diode, it comprises: a pedestal, it is for burning the base material of multi-layer ceramics altogether, this pedestal has a first surface and a second surface, one first heat-conducting layer and one second heat-conducting layer are arranged respectively on this first surface and this second surface, be provided with in this pedestal vertically and a plurality of heat carriers of horizontal interlaced connection, and those heat carriers respectively with this first heat-conducting layer and one second heat-conducting layer operative connection; An and horizontal heat diffusion member, it has one first contact-making surface and one second contact-making surface, this first contact-making surface is and this second surface operative connection, the coefficient of heat conduction of the horizontal direction of this horizontal heat diffusion member is greater than the coefficient of heat conduction of vertical direction, and the thermal coefficient of expansion of this horizontal heat diffusion member is between 2～15ppm/ ℃ again.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said pedestal are to be a plate body structure.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said pedestal are to be a concave structure.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said pedestal are to be a low temperature co-fired multi-layer ceramics.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said pedestal are to be a high temperature co-firing multi-layer ceramics.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said horizontal heat diffusion member are the sandwich structures for one a metal/aluminium nitride/metal or a metal/carbon silicon/metal.
Aforesaid light-emitting diode base structure, wherein said horizontal heat diffusion member with horizontal heat diffusion member be for the composite material of one bronze medal/molybdenum/copper or one tungsten/copper made.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said first contact-making surface and this second surface are that the welding material by one tin/antimony is a bond material, and wherein antimony to account for percentage by weight be 0.5% to 30%.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said first contact-making surface and this second surface are that the welding material by a tin/lead is a bond material, and wherein lead to account for percentage by weight be 0.5% to 30%.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said first contact-making surface and this second surface are that the welding material by one tin/bismuth is a bond material, and wherein bismuth to account for percentage by weight be 0.5% to 30%.
Aforesaid light-emitting diode base structure with horizontal heat diffusion member, wherein said first contact-making surface and this second surface are that the welding material by one tin/silver/copper is a bond material.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, for achieving the above object, the invention provides a kind of light-emitting diode base structure with horizontal heat diffusion member, it comprises: a pedestal, it is for burning the base material of multi-layer ceramics altogether, it has a first surface and a second surface, and one first heat-conducting layer and one second heat-conducting layer are arranged respectively on first surface and the second surface.Be provided with in the pedestal vertically and a plurality of heat carriers of horizontal interlaced connection, and heat carrier respectively with first heat-conducting layer and one second heat-conducting layer operative connection; And a horizontal heat diffusion member, it has one first contact-making surface and one second contact-making surface, and first contact-making surface is and the second surface operative connection that the thermal coefficient of expansion of horizontal heat diffusion member is between 2～15ppm/ ℃ again.
Pedestal of the present invention, its structure can be a plate body structure or a concave structure.The common burning multilayer ceramic base material of pedestal again, can for a low temperature co-fired multi-layer ceramics (Low-Temperature CofiredCeramics, LTCC) or a high temperature co-firing multi-layer ceramics (High-Temperature CofiredCeramics, HTCC).
The structure of horizontal heat diffusion member of the present invention can be the sandwich structure of one a metal/aluminium nitride/metal (Metal-AlN-Metal) or a metal/carbon silicon/metal (Metal-SiC-Metal).The material of horizontal heat diffusion member can be the composite material of one bronze medal/molybdenum/copper (Cu-Mo-Cu) or one tungsten/copper (W/Cu).
The combination of first contact-making surface of the second surface of pedestal and horizontal heat diffusion member can be welding manner among the present invention, and employed welding material can for the welding material of one tin/antimony (Sn/Sb), a tin/lead (Sn/Pb) or one tin/bismuth (Sn/Bi) as bond material, and wherein to account for the ratio of total weight respectively be 0.5% to 30% for antimony, lead, bismuth, maybe can use the welding material of tin/silver/copper (Sn/Ag/Cu) to be bond material.
By technique scheme, the light-emitting diode base structure that the present invention has horizontal heat diffusion member has following advantage and beneficial effect at least:
1, the present invention is provided with in pedestal vertically and horizontal heat carrier, can increase the approach of the horizontal heat conduction of light emitting diode seat body, and can improve the effect of pedestal heat conduction.
2, pedestal of the present invention bottom surface combines with horizontal heat diffusion member, utilizes horizontal heat diffusion member the heat energy of light-emitting diode evenly to be distributed enough in the horizontal direction the characteristic of the quick cross conduction of heat.
3, the present invention can improve the radiating rate of light emitting diode seat body, makes pedestal can carry the light-emitting diode of high wattage, and can improve the luminous efficiency of light-emitting diode.
In sum, the present invention has the light-emitting diode base structure of horizontal heat diffusion member, by the setting that vertically reaches horizontal heat carrier in the pedestal, the heat energy that can make light-emitting diode produce quickens to conduct to horizontal heat diffusion member, utilizes horizontal heat diffusion member that thermal conductance is gone out light emitting diode seat body again.The light-emitting diode base structure that pedestal combines with horizontal heat diffusion member can make base structure have better heat conduction efficiency.Therefore, the present invention has kx, ky by horizontal heat carrier and the horizontal heat diffusion member in the pedestal〉kz (k is the coefficient of heat conduction, x, y, z be three of rectangular coordinate system axially) characteristic, and can increase hot horizontal conductive ability, and then can improve heat conduction, the radiating rate of light-emitting diode.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing light-emitting diode base structure has the outstanding effect of enhancement, thereby being suitable for practicality more, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the cutaway view that has known technology light-emitting diode base structure now.
Fig. 2 is a kind of schematic perspective view with light-emitting diode base structure embodiment of horizontal heat diffusion member of the present invention.
Fig. 3 A is the upward view of the pedestal embodiment of a kind of light-emitting diode base structure of the present invention.
Fig. 3 B is the vertical view of the horizontal proliferation part embodiment of a kind of light-emitting diode base structure of the present invention.
Fig. 4 is a kind of stereogram with light-emitting diode base structure embodiment of horizontal heat diffusion member of the present invention.
Fig. 5 A is along the embodiment cutaway view of A-A hatching line among Fig. 4.
Fig. 5 B is the cutaway view of a kind of light-emitting diode base structure aspect one embodiment of the present invention.
Fig. 5 C is the cutaway view of a kind of light-emitting diode base structure aspect two embodiment of the present invention.
10: existing known light-emitting diode base structure 11: low temperature co-fired multilayer ceramic substrate
12: existing known vertical a plurality of heat carriers 13: metal substrate
14: light-emitting diode 15: heat abstractor
20: light-emitting diode base structure 21 of the present invention: pedestal
211: first surface 212: second surface
214: the second heat-conducting layers of 213: the first heat-conducting layers
215: the present invention vertically reaches horizontal heat carrier 216: the first metal layer
22: 221: the first contact-making surfaces of horizontal heat diffusion member
223: the second metal levels of 222: the second contact-making surfaces
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of the light-emitting diode base structure with horizontal heat diffusion member, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can clearly present in the following detailed description that cooperates with reference to graphic preferred embodiment.
See also shown in Fig. 2 to Fig. 5 C, Fig. 2 is a kind of schematic perspective view with light-emitting diode base structure 20 embodiment of horizontal heat diffusion member of the present invention.Fig. 3 A is the upward view of the pedestal embodiment of a kind of light-emitting diode base structure 20 of the present invention.Fig. 3 B is the vertical view of the horizontal proliferation part embodiment of a kind of light-emitting diode base structure 20 of the present invention.Fig. 4 is a kind of stereogram with light-emitting diode base structure 20 embodiment of horizontal heat diffusion member of the present invention.Fig. 5 A is along the embodiment cutaway view of A-A hatching line among Fig. 4.Fig. 5 B is the cutaway view of a kind of light-emitting diode base structure 20 aspects one embodiment of the present invention.Fig. 5 C is a kind of light-emitting diode base structure 20 of the present invention cutaway view of aspect two embodiment in addition.
See also Fig. 2, shown in Figure 4, a kind of light-emitting diode base structure 20 of preferred embodiment of the present invention with horizontal heat diffusion member, it comprises: a pedestal 21 and a horizontal heat diffusion member 22.
Above-mentioned pedestal 21, please in conjunction with consulting shown in Fig. 5 A, Fig. 5 B, Fig. 5 C, it has a first surface 211 and a second surface 212, be respectively equipped with one first heat-conducting layer 213 and one second heat-conducting layer 214 on this first surface 211 and the second surface 212, be provided with a plurality of heat carriers 215 that vertically reach horizontal interlaced connection in the pedestal 21, can increase vertically and the approach of horizontal heat conduction, and heat carrier 215 respectively with first heat-conducting layer 213 and second heat-conducting layer, 214 operative connection.
Seeing also pedestal shown in Figure 2, above-mentioned 21 is a plate body structure.The base material that present embodiment uses is for burning multi-layer ceramics altogether, the design of multilayer circuit distribution can be set burning the multi-layer ceramics internal layer altogether, makes it have highdensity circuit design, uses and is convenient to do electric connection with light-emitting diode 14.Because burn the heat conductivity height of multilayer ceramic base material altogether, and its thermal coefficient of expansion is 7ppm/ ℃, and the thermal coefficient of expansion of light-emitting diode 14 wafer material silicon is about 6ppm/ ℃, both thermal coefficient of expansions are close, therefore can avoid producing the chance of thermal stress, and then can avoid generation crack between light-emitting diode 14 and the pedestal 21 and reduce heat-conducting effect.The common burning multi-layer ceramics that present embodiment uses, it can be low temperature co-fired multi-layer ceramics or high temperature co-firing multi-layer ceramics.
This first heat-conducting layer 213 and second heat-conducting layer 214, the material of its use is identical with heat carrier 215, the mode that can print during making is arranged at first heat-conducting layer 213 and second heat-conducting layer 214 respectively on first surface 211 and the second surface 212.
The mode that this heat carrier 215 is provided with is for when burning the multilayer ceramic substrate processing procedure altogether, hole with bore mode on each layer ceramic substrate, and then heat carrier 215 is arranged at wherein longitudinally.After finishing vertical heat carrier 215 and being provided with, in the mode with printing on each layer ceramic substrate horizontal heat carrier 215 is being arranged on the common burning multilayer ceramic substrate again, is finishing the setting and the operative connection that vertically reach horizontal heat carrier 215.
The heat conduction that first heat-conducting layer 213 is produced light-emitting diode 14 is to heat carrier 215, again by burn altogether in the multilayer ceramic substrate vertically and horizontal heat carrier 215, with the heat conduction approach of interlaced connection, heat is passed to second heat-conducting layer 214 once more.
Above-mentioned horizontal heat diffusion member 22 has one first contact-making surface 221 and one second contact-making surface 222.Horizontal heat diffusion member 22, has kx, ky〉(k is the coefficient of heat conduction to kz, x, y, z be three of rectangular coordinate system axially) characteristic, therefore can utilize the high thermal conduction characteristic of its level, make heat to be distributed in uniformly on the horizontal heat diffusion member 22, avoid heat to concentrate on the single-point, and can increase its area of dissipation, and can increase the heat-transfer rate of light-emitting diode base structure 20.The coefficient of expansion of horizontal heat diffusion member 22 is between 2～15ppm/ ℃, so horizontal heat diffusion member 22 can have good matching with pedestal 21.Above-mentioned again horizontal heat diffusion member 22 can be made by the composite material of one bronze medal/molybdenum/copper or one tungsten/copper.
Is example with the composite of copper/molybdenum/copper as the material of heat conducting base material, its longitudinally the coefficient of heat conduction be 170k (W/m-℃), and the horizontal coefficient of heat conduction is 210k (W/m-a ℃), the horizontal coefficient of heat conduction is greater than the coefficient of heat conduction longitudinally, make transverse heat transfer speed greater than vertical heat conduction velocity, so heat can evenly distribute in the horizontal apace, heat is transmitted longitudinally simultaneously, can be with the second surface 212 of thermal energy conduction to horizontal heat diffusion member 22, again by second surface 212 and other heat abstractors 15 radiating fin for example ... wait to combine, and can increase the radiating effect of light-emitting diode base structure 20.
The structure of above-mentioned horizontal heat diffusion member 22 can also be the sandwich structure of one a metal/aluminium nitride/metal or a metal/carbon silicon/metal.Sandwich structure with metal/aluminium nitride/metal is an example, the vertical heat transfer speed of aluminium nitride and the ratio of horizontal heat conduction speed are 1:0.8, the heat conduction speed of level is slower, therefore at the upper and lower metal that adds respectively of aluminium nitride, make a kind of sandwich structure, can utilize the high-termal conductivity of metal, and the horizontal heat conduction speed of the diffusion part 22 of can improving the standard.
See also shown in Fig. 3 A and Fig. 3 B, above-mentioned pedestal 21 and horizontal heat diffusion member 22, be with second surface 212 and first contact-making surface, 221 operative connection, its binding site is to plate a first metal layer 216 on second surface 212, and the position with respect to the first metal layer 216 plates one second metal level 223 on first contact-making surface 221.With the first metal layer 216 and second metal level 223 with solder technology as the method that combines, the material of its combination can use the welding material of tin/antimony, tin/lead, tin/bismuth or tin/silver/copper, and wherein antimony, lead, bismuth to account for its percentage by weight respectively be 0.5% to 30%.
See also shown in Fig. 5 A, base structure 20 is a concave structure, it is in order to carrying light-emitting diode 14, and vertically reaching horizontal heat carrier 215 in the pedestal 21 is to distribute uniformly in the rough equal mode of quantity, and with second heat-conducting layer, 214 operative connection, make heat that light-emitting diode 14 sent can by a plurality of vertically and horizontal heat carriers 215 conduction.Present embodiment also can be simultaneously with a plurality of light-emitting diode base structures 20 with horizontal heat diffusion member and a heat abstractor 15 as radiating fin ... wait combination.
See also shown in Fig. 5 B, the quantity of vertical heat carrier 215 in the pedestal 21, first surface 211 by pedestal 21 increases progressively to the direction of second surface 212, because vertical quantity of heat carrier 215 and second surface 212 contact points are more, so can simultaneously heat energy evenly be conducted on the horizontal heat diffusion member 22, in order to the area of increase horizontal heat diffusion member 22 heat conduction, and the speed of accelerated luminescence diode base structure 20 heat conduction.
See also shown in Fig. 5 C, the quantity of vertical heat carrier 215 in the pedestal 21, first surface 211 by pedestal 21 successively decreases to the direction of second surface 212, the heat energy that this aspect can be produced light-emitting diode 14, via a plurality of vertical heat carriers 215, heat is conducted fast away from light-emitting diode 14, and conduct heat to horizontal heat diffusion member 22 earlier via the heat carrier 215 of lower floor, relend by the combining of horizontal heat diffusion member 22 and heat abstractor 15, and heat energy is dissipated in the environment.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (11)
1. light-emitting diode base structure with horizontal heat diffusion member in order to carry a light-emitting diode, is characterized in that it comprises:
One pedestal, it is for burning the base material of multi-layer ceramics altogether, this pedestal has a first surface and a second surface, one first heat-conducting layer and one second heat-conducting layer are arranged respectively on this first surface and this second surface, be provided with in this pedestal vertically and a plurality of heat carriers of horizontal interlaced connection, and those heat carriers respectively with this first heat-conducting layer and one second heat-conducting layer operative connection; And
One horizontal heat diffusion member, it has one first contact-making surface and one second contact-making surface, this first contact-making surface is and this second surface operative connection, the coefficient of heat conduction of the horizontal direction of this horizontal heat diffusion member is greater than the coefficient of heat conduction of vertical direction, again, the thermal coefficient of expansion of this horizontal heat diffusion member is between 2～15ppm/ ℃.
2. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said pedestal is to be a plate body structure.
3. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said pedestal is to be a concave structure.
4. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said pedestal is to be a low temperature co-fired multi-layer ceramics.
5. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said pedestal is to be a high temperature co-firing multi-layer ceramics.
6. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said horizontal heat diffusion member is the sandwich structure for one a metal/aluminium nitride/metal or a metal/carbon silicon/metal.
7. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1, it is characterized in that wherein said horizontal heat diffusion member be for the composite material of one bronze medal/molybdenum/copper or one tungsten/copper made.
8. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1, it is characterized in that wherein said first contact-making surface and this second surface are that welding material by one tin/antimony is a bond material, and wherein antimony to account for percentage by weight be 0.5% to 30%.
9. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1, it is characterized in that wherein said first contact-making surface and this second surface are that welding material by a tin/lead is a bond material, and wherein lead to account for percentage by weight be 0.5% to 30%.
10. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1, it is characterized in that wherein said first contact-making surface and this second surface are that welding material by one tin/bismuth is a bond material, and wherein bismuth to account for percentage by weight be 0.5% to 30%.
11. the light-emitting diode base structure with horizontal heat diffusion member according to claim 1 is characterized in that wherein said first contact-making surface and this second surface are that welding material by one tin/silver/copper is a bond material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007101061430A CN101312226B (en) | 2007-05-24 | 2007-05-24 | Luminous diode base structure possessing horizontal heat diffusion member |
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| CN2007101061430A CN101312226B (en) | 2007-05-24 | 2007-05-24 | Luminous diode base structure possessing horizontal heat diffusion member |
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| CN101312226B true CN101312226B (en) | 2010-07-21 |
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| CN103515499B (en) * | 2012-06-29 | 2016-04-06 | 联胜光电股份有限公司 | The thermal stress releasing structure of light-emitting diode |
| CN109166831A (en) * | 2018-08-29 | 2019-01-08 | 安徽星宇生产力促进中心有限公司 | A kind of heat dissipation patch for microelectronics |
| CN114156381B (en) * | 2021-11-19 | 2024-04-05 | 深圳市光科全息技术有限公司 | Light emitting diode and preparation method thereof |
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| US5347091A (en) * | 1992-08-21 | 1994-09-13 | Cts Corporation | Multilayer circuit card connector |
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| CN1499620A (en) * | 2002-11-07 | 2004-05-26 | ��ʽ�������Ƹ��� | Radiator and semiconductor element using such radiator and semiconductor packing body |
| CN2797872Y (en) * | 2005-05-19 | 2006-07-19 | 明达光电(厦门)有限公司 | LED solid illumination device with heat radiation module |
| US7098483B2 (en) * | 2003-05-05 | 2006-08-29 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5347091A (en) * | 1992-08-21 | 1994-09-13 | Cts Corporation | Multilayer circuit card connector |
| CN1155163A (en) * | 1994-11-09 | 1997-07-23 | 国际商业机器公司 | Packed semicondcutor chip with reinforced heat-conductivity |
| CN1499620A (en) * | 2002-11-07 | 2004-05-26 | ��ʽ�������Ƹ��� | Radiator and semiconductor element using such radiator and semiconductor packing body |
| US7098483B2 (en) * | 2003-05-05 | 2006-08-29 | Lamina Ceramics, Inc. | Light emitting diodes packaged for high temperature operation |
| CN2797872Y (en) * | 2005-05-19 | 2006-07-19 | 明达光电(厦门)有限公司 | LED solid illumination device with heat radiation module |
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| CN101312226A (en) | 2008-11-26 |
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