CN101309043B - Power conversion device - Google Patents

Abstract

To suppress current unbalance between electrical components connected in parallel in a power conversion device. In the power conversion device, first and second electrical components having positive and negative electrode terminals are connected in parallel through a positive electrode and a negative electrode. The positive electrode includes a first conductor area and a second conductor area that are respectively connected with the positive electrode terminal of the first electrical component and the positive electrode terminal of the second electrical component. The negative electrode includes a third conductor area and a fourth conductor area that are respectively connected with the negative electrode terminal of the first electrical component and the negative electrode terminal of the second electrical component. The first conductor area and the fourth conductor area have first opposite portions laminated and opposed to each other with electrical insulation ensured. The second conductor area and the third conductor area have second opposite portions laminated and opposed to each other with electrical insulation ensured.

Description

Power conversion unit

The application divides an application, and the application number of original application is 2006101428638, the applying date is that October 30, invention and created name in 2006 are power conversion unit.

Technical field

The present invention relates to a kind of power conversion unit (power converter, power-converting device), this power conversion unit has the circuit that the electric component by a plurality of semiconductor modules etc. is connected in parallel and forms.

Background technology

Adopt the power conversion unit of insulated gate bipolar transistor high-speed semiconductor switch elements such as (IGBT) to obtain utilizing widely in every field.In recent years,, developed the large-capacity semiconductor module, and the semiconductor switch of the last underarm of formation inverter is also to have been obtained utilizing widely by the semiconductor module that a module constitutes along with the progress of semiconductor technology.

And, a plurality of semiconductor modules are connected in parallel and realize that the technology of high capacity has also obtained exploitation.

When being connected in parallel, if the electric current of each semiconductor element burden is inhomogeneous, then service condition and life-span will be by the heavy side decisions of burden, so be necessary to carry out equalization.

The principal element of the electric current equalization when being connected in parallel as influence can be enumerated out the difference of semiconductor element characteristic, the difference of gate driver circuit and the difference of primary circuit route inductance etc.Wherein, to the difference of semiconductor element characteristic, the method for generally taking semiconductor element is selected is so that the characteristic equalization between the parallelly connected element.To the difference of gate driver circuit, for example shown in patent documentation 1, can take to be suppressed at the electric current that circulates between the parallelly connected grid, thereby to realize the method for equalization through making a part of magnetic coupling of gate driver circuit.

On the other hand, making aspect the equalization of primary circuit route inductance, has the method shown in patent documentation 2 and 3.The method of wiring inductance being carried out equalization from the AC side of three-phase inverter circuitry is disclosed in patent documentation 2.But, because the electric current in during the switch is changed the circuit that the distribution inductance that exerts an influence is present in the last underarm circulation that does not comprise the AC load circuit, so, also can not get big effect even the wiring inductance from AC side is carried out equalization.In the high big capacity conversion equipment of switching frequency, because the switch motion that takes place during switch motion loss is also bigger than the constant loss that the conducting voltage of semiconductor element causes, so the electric current equalization must realize switch motion the time.

The equalization technology of the wiring inductance when constituting two elements up and down by a module is disclosed in patent documentation 3 in addition.In this technology, the semiconductor module that at one end has positive terminal and negative terminal adopts and the linked method connection.Through make two semiconductor modules being connected in parallel and smmothing capacitor between distance about equally, make wiring inductance realize equalization basically.But, cause the electric current of each module change to produce when inhomogeneous in difference because of property of semiconductor element or gate driving, though above-mentioned technology can make electric current impartial and make voltage equalization separately, its effect is insufficient.

Patent documentation 1: the patent of invention spy of Japan opens flat 10-14215 communique

Patent documentation 2: the patent of invention spy of Japan opens the 2000-116113 communique

Patent documentation 3: the patent of invention spy of Japan opens the 2004-135444 communique

Summary of the invention

Problem to be solved by this invention is the inhomogeneities of the electric current that the electric component of switch element in the inhibition variable power device or smmothing capacitor etc. produces when being connected in parallel.

In power conversion unit of the present invention; First and second electric component with positive terminal and negative terminal is connected in parallel through side of the positive electrode electrode and negative side electrode; The side of the positive electrode electrode has first conductive region and second conductive region on the positive terminal of the positive terminal that is connected to first electric component respectively and second electric component, and the negative side electrode has the 3rd conductive region and the 4th conductive region on the negative terminal of the negative terminal that is connected to first electric component respectively and second electric component.And; First conductive region and the 4th conductive region have relatively to range upon range of and keep the first subtend part of electric insulation, second conductive region and the 3rd conductive region to have relatively to range upon range of and keep the second subtend part of electric insulation each other each other.

The invention effect

In first subtend part and second subtend part,, thereby can suppress the inhomogeneities of electric current because of the electric current that flows through each conductive region produces the magnetic coupling.

Description of drawings

Fig. 1 representes the wire structures in the first embodiment of the invention.

Wire structures when Fig. 2 representes being connected in parallel in the conventional art.

Fig. 3 representes the circuit structure as the power inverter of suitable application area of the present invention.

Fig. 4 expression has for example used the example that is connected in parallel of the present invention.

Fig. 5 representes to be used to confirm the structure in the calculating of effect of the present invention.

Fig. 6 representes to be used for to confirm the comparative descriptions of the calculating of effect of the present invention.

Fig. 7 representes that first affirmation that effect of the present invention is confirmed is routine.

Fig. 8 representes to be used to confirm the structure (second example) in the calculating of effect of the present invention.

Fig. 9 representes to be used for to confirm the comparative descriptions (second example) of the calculating of effect of the present invention.

Figure 10 representes that second affirmation that effect of the present invention is confirmed is routine.

Figure 11 representes the cloth line mounting structure in the second embodiment of the invention.

Figure 12 represent that the A-A ' of Figure 11 locates to view.

Figure 13 represent that the B-B ' of Figure 11 locates to view.

Figure 14 representes the shape of the semiconductor module bonding conductor among Figure 11.

Figure 15 representes to be used to connect the shape of conductor of the conductor of Figure 14 and Figure 16.

Figure 16 representes the shape of the capacitor bonding conductor among Figure 11.

Figure 17 representes semiconductor module and the Capacitor Allocation situation in the third embodiment of the invention.

Figure 18 is the front view of the wiring conductor in the third embodiment of the invention.

Figure 19 is the end view of the wiring conductor in the third embodiment of the invention.

Figure 20 representes the shape of the IGBT bonding conductor in the third embodiment of the invention.

Figure 21 representes the shape of the bonding conductor midway in the third embodiment of the invention.

Figure 22 representes the shape of the capacitor bonding conductor in the third embodiment of the invention.

Figure 23 representes the installation shape of the wiring conductor in the fourth embodiment of the invention.

Figure 24 representes the shape of the conductor that respectively connects up in the fourth embodiment of the invention.

Figure 25 representes the general structure example relevant with fifth embodiment of the invention.

Figure 26 representes the fifth embodiment of the present invention.

Figure 27 representes the variant of the fifth embodiment of the present invention.

Figure 28 representes the power conversion unit as sixth embodiment of the invention.

Figure 29 is the action specification figure (roughly evenly time current waveform) of the 6th embodiment.

Figure 30 is the action specification figure (current waveform when current unevenness is even) of the 6th embodiment.

Figure 31 is the mounting structure example of sixth embodiment of the invention.

Figure 32 represent that the A-A ' of Figure 31 locates to view and B-B ' locate to view.

Figure 33 represent that the C-C ' of Figure 31 locates to view.

Symbol description: 3,31～34-smmothing capacitor; The 4-motor; The 5-power supply; 11P～13N, 11P1～11N2, the automatic arc-suppressing switch element of 21P～23N-(comprising the backflow diode); 61～63-reactor; 91～95-insulation board; 111,112,101, the 102-semiconductor module; 711,712, the 72-conductor that connects up; 800,801,831～834-wiring conductor magnetic coupling unit.

Embodiment

Followingly the present invention is carried out detailed explanation with reference to accompanying drawing.

Embodiment 1

Fig. 3 representes the circuit structure as the common power converter of application of the present invention.As shown in Figure 3, from power supply 5 by by the reactor 61～63 that boosts, automatically the rectification circuit (along transformation loop) that constitutes of arc-suppressing switch element (is that example describes with IGBT at this) 21P～23N, the inverter circuit (inverse transformation loop) that is made of direct current smmothing capacitor 3 and IGBT11P～13N are supplied power arbitrarily to motor 4.In addition, used the rectification circuit that constitutes by boost reactor 61～63 and IGBT21P～23N at this, but also can adopt the circuit that constitutes by single rectifier diode.

Supplying to motor when high-power, because the restriction of IGBT current capacity, need a plurality of IGBT are being connected in parallel and electric current is increased sometimes.For example, as shown in Figure 4,11P1 and two of 11P2 are connected in parallel with an arm 11P of the converter circuit in the pie graph 3, and 11N1 and two of 11N2 are connected in parallel with another arm 11N of the converter circuit in the pie graph 3.In addition, in smmothing capacitor 3, adopt four methods that are connected in parallel to constitute capacitor 31～34.When indication circuit structure as Fig. 3 and Fig. 4, usually do not indicate the stray inductance of wiring portion, but in fact have stray inductance in the wiring portion, exert an influence and jump on the voltage of this stray inductance can be to switch motion the time.What exert an influence in the moment of switch motion is to flow through the path shown in the dotted line of Fig. 4; Promptly go up the caused phenomenon of change in current of circulation loop of IGBT and the smmothing capacitor 3 of underarm; In order to suppress jumping-up voltage, be necessary to reduce the stray inductance of this loop.

In addition, the electric current in the time of can be to switch motion distributes the wiring inductance that exerts an influence too, makes the wiring inductance homogenizing of this loop very important.

Usually in circuit diagram, do not indicate wiring inductance, but because wiring inductance is an important factor, so the symbolization form has been made mark to inductance.

Fig. 2 representes to have two semiconductor modules to be connected in parallel, and has four capacitors to be connected in parallel, side of the positive electrode conductor and negative side conductor range upon range of and relatively to circuit structure.

In Fig. 2, capacitor C1 (31)～C4 (34) is connected in parallel, and comprises the last underarm 11P1 that is formed by connecting IGBT and the inverse parallel of backflow diode in the semiconductor module 111, and 11N1 is same, comprises 11P2 in the semiconductor module 112,11N2.And semiconductor module 111 and 112 two are connected in parallel.Because side of the positive electrode conductor and negative side conductor are relatively to range upon range of, so by the magnetic coupling part that comprises these inductive parts 800 expressions.Near each capacitor terminal, do not produce the magnetic coupling, it is represented with 841P～844N in the drawings.In addition, near the terminal of semiconductor module, also do not produce the magnetic coupling, it is represented with 821P～822N in the drawings.Because ac terminal AC1 and AC2 also are electrically connected, so by the wiring inductance before 881,882 these tie points of expression.

Relative therewith, Fig. 1 representes embodiments of the invention.

As the structure of wiring conductor, the conductor dbus that is used to connect IGBT and smmothing capacitor is crossed and is made anodal conductor and cathode conductor have common range upon range of subtend part 801 to reduce inductance.In addition; The conductor that is connected to IGBT is shunted to conductor that is connected with semiconductor module 111 and the conductor that is connected with other semiconductor modules 112; In by conductor along separate routes, the part that is connected with the positive terminal P1 of semiconductor module 111 is coupled into reciprocal electric current relatively to (811) with the part magnetic that is connected with the negative terminal N2 of semiconductor module 112.Equally, the part that is connected with the negative terminal N1 of semiconductor module 111 is coupled into reciprocal electric current relatively to (812) with the part magnetic that is connected with the positive terminal P2 of semiconductor module 112.

On the other hand, in the smmothing capacitor 31～34 that forms that is connected in parallel by four capacitors, the wiring conductor is the part that is connected with each terminal along separate routes also, has identical magnetic coupling unit in per two capacitors (being 31 and 32 and 33 and 34 among the figure).That is the part that, is connected with the positive terminal C1P of capacitor 31 is coupled into reciprocal electric current relatively to (831) with the part magnetic that is connected with the negative terminal C2N of capacitor 32.Equally, the part that is connected with the negative terminal C1N of capacitor 31 is coupled into reciprocal electric current relatively to (832) with the part magnetic that is connected with the positive terminal C2P of capacitor 32.Remaining two capacitor 33 and 34 too, C3P coupling part and C4N coupling part magnetic coupling (833), C4P coupling part and C3N coupling part magnetic be coupled (834).

Below through simple calculated example the effect of Fig. 1 embodiment is described.At this, stress being connected in parallel of semiconductor module, and capacitor part integral body is as voltage source.

Comparing for example at first with Fig. 5.

Each electric current when i1 shown in Figure 5 and i2 represent the IGBT conducting of upper arm.Supposing in the backflow diode of underarm has reverse recovery current to flow through, and is in short-circuit condition as circuit.As the component parts of circuit, smmothing capacitor is partly unified simulates with direct voltage.Suppose the inductance L t=L of common sparing, shunt to each terminals P 1, N1, P2, the inductance of the part of N2 are L1p, L1n, L2p, L2n, and this any value is equal values L.And, the part that is used to connect the intermediate terminal (ac terminal of inverter) of two semiconductor modules respectively do for oneself Lc (=L).

At this, the wiring of supposing semiconductor module 1 side is because of factors such as length are slightly long, and its inductance is big about one one-tenth, under this condition, connect Ldif (=0.1L)

Fig. 6 is illustrated in the situation that the electric current when making SW1 and SW2 conducting simultaneously among Fig. 5 changes, and sometime i1 and the current value of i2 are compared.

The inhomogeneities that Fig. 7 representes two kinds of electric currents in the structure and comprehensive inductance are because of the different situation about changing of magnetic-coupled degree (coupling efficiency k).In Fig. 7, solid line is illustrated in the situation when in the module that adopts the present embodiment structure coupling taking place, and dotted line is illustrated in the situation when in the module that adopts ordinary construction coupling taking place.Can know that from figure under two kinds of situation, the reduction situation of comprehensive inductance is substantially the same, but aspect the even property of current unevenness, adopt the structure of present embodiment to make the even property of current unevenness obtain further reduction.

Below the supposition circuit inductance does not have difference, and the switching characteristic aspect of IGBT has difference, and compares explanation with regard to this situation.Fig. 8 is the simulation drawing of above-mentioned situation.Different with Fig. 5 is not have inductance difference Ldif among Fig. 8.At this, make the SW2 conducting earlier, make the SW1 conducting then, and in Fig. 9, compare having passed through the current value behind the certain hour.

Comparative result is shown in figure 10.As can beappreciated from fig. 10, this moment is also the same with Fig. 7, adopts structure of the present invention, and the inhomogeneities of electric current etc. has obtained further reduction.

As the second embodiment of the present invention, below with reference to Figure 11～Figure 16 to the wiring conductor mounting structure describe.

Figure 11 represent semiconductor module 111 and 112 with the wiring conductor of smmothing capacitor 31～34.Omitted the diagram of the insulation board of wiring conductor among the figure.And, with the aid of pictures for ease, the thickness and the conductor separation of conductor have been done amplification, but in fact, the interval of laminated conductor is narrow more, then the magnetic coupling is tight more, and it is also good more insulate, so preferably the interval of laminated conductor is arranged to the interval of minimum.

Figure 12 represent that the A-A ' of Figure 11 locates to view, Figure 13 represent that the B-B ' of Figure 11 locates to view.

In semiconductor module 111 (112), the upper surface of module has positive terminal P1 (P2), negative terminal N1 (N2) and ac terminal AC1 (AC2), has positive terminal C1P～C4P and negative terminal C1N～C4N in the capacitor 31～34 respectively.

Like Figure 12 and shown in Figure 14; The P1 conductor has the regional a2 that is electrically connected with the positive terminal P1 of semiconductor module 111, the regional a3 that is electrically connected with PC conductor shown in Figure 15 and between regional a2 and regional a3, with the N conductor relatively to range upon range of and keep the regional a1 of electric insulation each other.The P2 conductor has the regional b2 that is electrically connected with the positive terminal P2 of semiconductor module 112, the regional b3 that is electrically connected with the PC conductor and between regional b2 and regional b3, with the N conductor relatively to range upon range of and keep the regional b1 of electric insulation each other.The N conductor has the regional c2 that is electrically connected with the negative terminal N1 of semiconductor module 111, with the regional c3 of the negative terminal N2 electrical connection of semiconductor module 112, be connected with regional c3 with regional c2, and with P1 conductor and P2 conductor relatively to range upon range of and keep the regional c1 of electric insulation and the regional c4 that is electrically connected with NC conductor shown in Figure 15 each other.

Shown in figure 12, semiconductor module 111 and 112 adjacent settings, wherein positive terminal P1 and negative terminal N2 relatively to, and negative terminal N2 and positive terminal P2 relatively to.The regional c1 of N conductor is arranged between the regional b1 of regional a1 and P2 conductor of P1 conductor.Through P1 conductor, P2 conductor and PC conductor positive terminal P1 and positive terminal P2 are electrically connected, negative terminal N1 and negative terminal N2 are electrically connected through N conductor and NC conductor.That is the side of the positive electrode conductor through comprising P1 conductor, P2 conductor and PC conductor and comprise the N conductor and the negative side conductor of NC conductor is connected in parallel semiconductor module 111 and semiconductor module 112.

The P1 conductor, flow through regional a3, regional a1 and regional a2 from the PC conductor flow successively to the electric current of semiconductor module 111 positive terminal P1.In the present embodiment, the adjacent setting with regional a3 of regional a2 also is connected with regional a1, and regional a1 is more broader than the coupling part of regional a2 and regional a3.Therefore, electric current flows through the narrow relatively part of the oblique line part A that comprises Figure 14 (3) in the P1 conductor.

On the other hand, the P2 conductor, flow through regional b3, regional b1 and regional b2 from the PC conductor flow successively to the electric current of the positive terminal P2 of semiconductor module 112.In the present embodiment, the adjacent setting with regional b3 of regional b2 also is connected with regional b1, and regional b1 is more broader than the coupling part of regional b2 and regional b3.Therefore, electric current flows through the narrow relatively part of the oblique line part B that comprises Figure 14 (1) in the P2 conductor.

Flow to the semi-conductive electric current of NC from the negative terminal N2 of the negative terminal N1 of semiconductor module 111 and semiconductor module 112 and the N conductor, flow through zone C 2, zone C 1 and zone C 4 successively, also flow through zone C 3, zone C 1 and zone C 4 simultaneously successively.That is, all flow through regional c1 from the electric current of the negative terminal N2 of the negative terminal N1 of semiconductor module 111 and semiconductor module 112, so electric current flows through broader part among the regional c1 that comprises oblique line portion C shown in Figure 14 (2) and C '.

Because electric current flows in P1 conductor, P2 conductor and N conductor as stated; So in the present embodiment; In the subtend of P1 conductor and N conductor part, flow through the electric current and the oblique line portion C that flows through the N conductor of the oblique line part A of P1 conductor ' electric current subtend each other.That is, flow to semiconductor module 111 positive terminal P1 electric current and the electric current that flows out from the negative terminal N2 of semiconductor module 112 relatively to.Therefore, the oblique line part A produces magnetic coupling 811 shown in Figure 1 among the C '.In addition, in the subtend part of P2 conductor and N conductor, flow through the P2 conductor oblique line part B electric current with flow through the N conductor the oblique line portion C electric current relatively to.That is, flow to semiconductor module 112 positive terminal P2 electric current and the electric current that flows out from the negative terminal N1 of semiconductor module 111 relatively to.Therefore, oblique line part B produces magnetic coupling 812 shown in Figure 1 among the C.Therefore,, can reduce the comprehensive inductance of the wiring conductor of be connected in parallel semiconductor module 111 and semiconductor module 112 like Fig. 7 and shown in Figure 10, and the even property of current unevenness that reduces semiconductor module 111 and semiconductor module 112.

And in the present embodiment, the electric current that flows to the positive terminal of each semiconductor module separately flows into P1 conductor and P2 conductor, and, by the oblique line part A, the subtend of C ' expression part and by oblique line part B, the subtend part phase non-overlapping copies that C representes.For this reason, can reduce the oblique line part A, magnetic coupling and oblique line part B among the C ', the magnetic-coupled interference among the C.In addition; The electric current that flows through the negative terminal of each semiconductor module all flows through the N conductor; So,, also can prevent the oblique line part A even change slightly takes place the relative position between P1 conductor, P2 conductor and the N conductor; Magnetic coupling and oblique line part B among the C ', the magnetic-coupled coupling efficiency among the C produces big change.Therefore, can be conscientiously and stably reduce the inhomogeneities of electric current.

In the present embodiment, the conductive region that is connected with the negative terminal N1 of semiconductor module 111 and conductive region that is connected with the negative terminal N2 of semiconductor module 112 and being integrally formed of N conductor.For this reason, the oblique line portion C, the conductive region basic setup among the C ' is at grade.Thus, can reduce the kind of parts, practice thrift the required space of wiring.Relative therewith, also can the N conductor be divided into two, one of them is connected with negative terminal N1, another is connected with negative terminal N2, both all are connected with the NC conductor.At this moment, be divided into the conductive region that comprises the oblique line portion C and comprise the oblique line portion C ' conductive region, but only need the conductive region of two oblique lines parts roughly is provided with at grade, just can practice thrift the required space of wiring.

In the present embodiment; Comprise the conductive region that is connected with the positive terminal P1 of semiconductor module 111 be the oblique line part A in the P1 conductor part with comprise that the conductive region that is connected with the positive terminal P2 of semiconductor module 112 is that the part of the oblique line part B in the P2 conductor is positioned at opposition side each other with respect to the N conductor, and be positioned on the mutual different plane.Thus, can when practicing thrift wiring space, reduce the oblique line part A with said N conductor, magnetic coupling and oblique line part B among the C ', the magnetic-coupled interference among the C.

In addition, in the present embodiment, in the regional a1 of P1 conductor, the part that can extend out through the coupling part from regional a2 and regional a3 reduces resistance and the wiring inductance of regional a1.And the part that extends out from the coupling part of regional a2 and regional a3 comprises the part that principal current does not flow through, and in the part that this principal current does not flow through, when principal current flows through the N conductor, can respond to the generation transient current.And the magnetic flux that is produced by this induced current has the effect of the wiring inductance that reduces the N conductor.

In addition, in the present embodiment, can adopt the shape conductor identical to replace P1 conductor and P2 conductor, and also can adopt shape and the P1 conductor conductor identical to replace the N conductor, and obtain identical effect and effect with the P2 conductor with the N conductor.

Figure 15 representes Figure 11 and the conductor that is connected with capacitor shown in Figure 13 with Figure 16.Shown in Figure 16 (1); The regional d3 that the CP1 conductor has the regional d2 that is electrically connected with the positive terminal C1P of capacitor 31, be electrically connected with the positive terminal C3P of capacitor 33, be connected with the regional d4 of PC conductor electrical connection shown in Figure 15 and with this zone, and with the CN conductor relatively to range upon range of and keep the regional d1 of electric insulation each other.In addition, between regional d3 and regional d4 are clipped in regional d1 wherein, and with adjacent connection of end of regional d1.In regional d1, regional d2 is in a side identical with regional d3, with regional d3 be connected dividually from part that coupling part that regional d3 is connected with regional d4 extends out on.Shown in Figure 16 (3); The regional e3 that the CP2 conductor has the regional e2 that is electrically connected with the positive terminal C2P of capacitor 32, be electrically connected with the positive terminal C4P of capacitor 34, be connected with the regional e4 of PC conductor electrical connection shown in Figure 15 and with this zone, and with the CN conductor relatively to range upon range of and keep the regional e1 of electric insulation each other.And, between regional e2 and regional e4 are clipped in regional e1 wherein, and with adjacent connection of end of regional e1.In regional e1, regional e3 is in a side identical with regional e2, with regional e2 be connected dividually from part that coupling part that regional e2 is connected with regional e4 extends out on.Shown in Figure 16 (2); The regional f3 that the CN conductor has the regional f2 that is electrically connected with the negative terminal C1N of capacitor 31, be electrically connected with the negative terminal C2N of capacitor 32, the regional f4 that is electrically connected with the negative terminal C3N of capacitor 33, with the regional f5 of the negative terminal C4N electrical connection of capacitor 34, be connected with the regional f6 of NC conductor electrical connection shown in Figure 15 and with this zone, and with CP1 conductor and CP2 conductor relatively to range upon range of and keep the regional f1 of electric insulation each other.And, regional f2, f3, f4, f5 is connected with regional f1 in an identical side, and regional f6 is connected with regional f1 in an opposite side.Zone f2 is connected with the end of regional f1, and regional f5 is connected with another end of regional f1.Zone f3 and regional f4 begin from the side of access areas f2 between regional f2 and regional f5, are connected with regional f1 with the order of regional f3, regional f4.

Shown in figure 13, capacitor 31 and capacitor 32 be in abutting connection with being set up in parallel, wherein positive terminal C1P and negative terminal C2N relatively to, and negative terminal C1N and positive terminal C2P relatively to.And capacitor 33 and capacitor 34 be in abutting connection with being set up in parallel, wherein positive terminal C3P and negative terminal C4N relatively to, and negative terminal C3N and positive terminal C4P relatively to.The regional f1 of CN conductor is between the regional e1 of the regional d1 of CP1 conductor and CP2 conductor.Through CP1 conductor, CP2 conductor and PC conductor, make positive terminal CP1, CP2, CP3 and CP4 are electrically connected each other, through CN conductor and NC conductor, make negative terminal CN1, CN2, CN3 and CN4 are electrically connected each other.That is, the side of the positive electrode conductor through comprising CP1 conductor, CP2 conductor and PC conductor and comprise the CN conductor and the negative side conductor of NC conductor makes capacitor 31,32,33 and 34 connections parallel with one another.

The electric current that between the positive terminal C1P of PC conductor and capacitor 31, flows flows through the regional d2 of CP1 conductor, d1, and d4 flows through, and the electric current that between the negative terminal C2N of NC conductor and capacitor 32, flows flows through the regional f3 of CN conductor, f1, f6 flows through.At this, shown in figure 13, in capacitor 31 and capacitor 32, regional d2 and regional f3 relatively to.For this reason; Flow through the oblique line part D1 among Figure 16; Promptly comprise among the regional d1 and coupling part regional d2 and regional d2 part electric current with flow through the oblique line part F2 among Figure 16, promptly comprise among the regional f1 and coupling part regional f3 and regional f3 part electric current relatively to.That is, the electric current that flows between the positive terminal C1P of PC conductor and capacitor 31 and electric current mobile between the negative terminal C2N of NC conductor and capacitor 32 relatively to.Therefore, produce magnetic coupling 831 shown in Figure 1 among oblique line part D1 and the F2.

On the other hand, the electric current that between the positive terminal C2P of PC conductor and capacitor 32, flows flows through the regional e2 of CP2 conductor, e1, and e4, the electric current that between the negative terminal C1N of NC conductor and capacitor 31, flows flows through the regional f2 of CN conductor, f1, f6.At this, shown in figure 13, in capacitor 31 and capacitor 32, regional e2 and regional f2 relatively to.For this reason; Flow through the oblique line part E2 among Figure 16; Promptly comprise among the regional e1 and coupling part regional e2 and regional e2 part electric current with flow through the oblique line part F1 among Figure 16, promptly comprise among the regional f1 and coupling part regional f2 and regional f2 part electric current relatively to.That is, the electric current that flows between the positive terminal C2P of PC conductor and capacitor 32 and electric current mobile between the negative terminal C1N of NC conductor and capacitor 31 relatively to.Therefore, produce magnetic coupling 832 shown in Figure 1 among oblique line part E2 and the F1.

Therefore, the comprehensive inductance of the wiring conductor of be connected in parallel capacitor 31 and 32 can be reduced, the even property of current unevenness of capacitor 31 and 32 can also be reduced simultaneously.

The electric current that between the positive terminal C3P of PC conductor and capacitor 33, flows flows through the regional d3 of CP1 conductor, d1, and d4, the electric current that between the negative terminal C4N of NC conductor and capacitor 34, flows flows through the regional f5 of CN conductor, f1, f6.At this, shown in figure 13, in capacitor 33 and capacitor 34, regional d3 and regional f5 relatively to.For this reason; Flow through the oblique line part D3 among Figure 16; Promptly comprise among the regional d1 and coupling part regional d3 and regional d3 part electric current with flow through the oblique line part F4 among Figure 16, promptly comprise among the regional f1 and coupling part regional f5 and regional f5 part electric current relatively to.That is, the electric current that flows between the positive terminal C3P of PC conductor and capacitor 33 and electric current mobile between the negative terminal C4N of NC conductor and capacitor 34 relatively to.Therefore, produce magnetic coupling 833 shown in Figure 1 among oblique line part D3 and the F4.

On the other hand, the electric current that between the positive terminal C4P of PC conductor and capacitor 34, flows flows through the regional e3 of CP2 conductor, e1, and e4, the electric current that between the negative terminal C3N of NC conductor and capacitor 33, flows flows through the regional f4 of CN conductor, f1, f6.At this, shown in figure 13, in capacitor 33 and capacitor 34, regional e3 and regional f4 relatively to.For this reason; Flow through the oblique line part E4 among Figure 16; Promptly comprise among the regional e1 and coupling part regional e3 and regional e3 part electric current with flow through the oblique line part F3 among Figure 16, promptly comprise among the regional f1 and coupling part regional f4 and regional f4 part electric current relatively to.That is, the electric current that flows between the positive terminal C4P of PC conductor and capacitor 34 and electric current mobile between the negative terminal C3N of NC conductor and capacitor 33 relatively to.Therefore, produce magnetic coupling 834 shown in Figure 1 among oblique line part E4 and the F3.

Therefore, the comprehensive inductance of the wiring conductor of be connected in parallel capacitor 33 and 34 can be reduced, the even property of current unevenness of capacitor 33 and 34 can also be reduced simultaneously.

In addition, in the present embodiment, in the CP1 conductor, regional d2 all is connected with regional d1 with regional d3, but also can the d1 zone be divided into part that is connected with regional d2 and the part that is connected with regional d3, and on this part, connects the PC conductor respectively.This point in the CP2 conductor too.In the CN conductor, also can the f1 zone be divided into the part that is connected with regional f3 with regional f2 and the part that is connected with regional f5 with regional f4, and on this part, connect the NC conductor respectively.In addition, also can the f1 zone be divided into and regional f2, f3, f4, four parts that f5 connects, and on this part, connect the NC conductor respectively.

Following as the 3rd embodiment, the mounting structure of the wiring conductor when semiconductor module and four in capacitor are connected in parallel describes.

Shown in figure 17; Suppose that IGBT is gone up underarm forms two row that whole semiconductor module 111～114 is arranged to two one row; And its four be connected in parallel, and aspect smmothing capacitor, also capacitor 31～34 is arranged to two row of two one row; Make two row relatively to, and its four be connected in parallel.In addition, as shown in the figure, each capacitor has two groups of positive terminals that are arranged alternately and negative terminal respectively.

In each semiconductor module, be provided with positive terminal and negative terminal along a limit of its upper surface.Semiconductor module 111 and semiconductor module 112 be in abutting connection with being provided with, and makes the limit adjacency side by side each other that is provided with positive terminal and negative terminal, and make positive terminal P1 and negative terminal N2 relatively to, positive terminal P2 and negative terminal N1 relatively to.And semiconductor module 113 is provided with semiconductor module 114 too.In addition; The positive terminal and the negative terminal of the positive terminal of semiconductor module 111 and negative terminal and semiconductor module 113 are located on the same line in fact, and the positive terminal and the negative terminal of the positive terminal of semiconductor module 112 and negative terminal and semiconductor module 114 are located on the same line in fact too.Generally speaking, semiconductor module 111 is connected in parallel through making the described conductor of the foregoing description with semiconductor module 112, can reduce the inhomogeneities of electric current.And semiconductor module 113 and semiconductor module 114 are connected in parallel through making the described conductor of the foregoing description too, can reduce the inhomogeneities of electric current.That is, use two groups of conductors described in the foregoing description in principle.

In each capacitor, two positive terminals and two negative terminal linearities and positive and negative alternately are provided with.Capacitor 31 and capacitor 32 make each terminal be listed as almost parallel each other in abutting connection with being provided with, and make positive terminal and negative terminal relatively to.Capacitor 33 adjacent too settings with capacitor 34.In addition, the terminal of capacitor 31 row are located on the same line in fact with the terminal row of capacitor 33, and the terminal row of capacitor 32 are located on the same line in fact with the terminal row of capacitor 34 too.Generally speaking, capacitor 31 is connected in parallel through making the described conductor of the foregoing description with capacitor 32, can reduce the inhomogeneities of electric current.And capacitor 33 and capacitor 34 are connected in parallel through making the described conductor of the foregoing description too, can reduce the inhomogeneities of electric current.That is, use two groups of conductors described in the foregoing description in principle.

The installation of the wiring conductor of this moment is for example like Figure 18 and shown in Figure 19.

Figure 18 is a front view, and Figure 19 is the end view when observing from Figure 17 right front.

This wiring conductor has the subtend stepped construction of guaranteeing insulating properties by many groups and forms.With part that semiconductor module is connected in, P13 conductor and N conductor and P24 conductor form the subtend stepped construction, and with part that capacitor is connected in, CP1 conductor and CN conductor and CP2 conductor formation subtend stepped construction.In addition, in the part that connects above-mentioned part, PC conductor and PN conductor form the subtend stepped construction.The section of the insulation board in the subtend laminated conductor is represented with oblique line in the drawings.

Figure 20 to Figure 22 is the exploded view of the subtend laminated conductor of expression each several part.

The subtend laminated conductor of the part that Figure 20 representes to be connected with semiconductor module.That is, the P13 conductor across insulation board 91 and N conductor relatively to, N conductor across insulation board 92 and P24 conductor relatively to.

The P13 conductor has two semiconductor module terminal connecting portion (oblique line part), the terminal connecting portion (representing with oblique line equally) of these two coupling parts and N conductor contiguous and relatively to, promptly P1 and N2 and P3 and N4 be close to each other and relatively to.Through constituting magnetic coupling unit 811 shown in Figure 1, realize aforesaid electric current equalization and reduce aforesaid wiring inductance in this part.

In addition; The P24 conductor also has two semiconductor module terminal connecting portion (oblique line to be different from said oblique line is represented); Through the semiconductor module terminal connecting portion that makes these two coupling parts and N conductor contiguous and relatively to; Be P2 and N1 and P4 and N3 contiguous each other and relatively to, realize the electric current equalization and reduce wiring inductance.

In addition, as shown in the figure, P13 conductor and P24 conductor and N conductor have in a side opposite with the coupling part of semiconductor module and are used for the terminal that is connected with other conductors.

Figure 21 representes PC conductor that is connected with the P24 conductor with the P13 conductor and the NC conductor that is connected with the N conductor.PC conductor and NC conductor are range upon range of across insulation board 93 subtends, can reduce wiring inductance thus.

The PC conductor dbus is crossed P11b and is connected with the P11a of P13 conductor, and P12b is connected with the P12a of P13 conductor and is connected with the P13 conductor.Only illustrate the hole that is used for fastening bolt when superimposed among the figure.Equally, through P21b and P21a be connected and P22b coupled together PC conductor and P24 conductor with being connected of P22a, and through being connected of N11b and N11a, N12b and N12a be connected and N13b coupled together NC conductor and N conductor with being connected of N13a.

End at the opposition side of PC conductor has part P51b and the P53b that is connected with CP1 conductor shown in Figure 22, and the part P52b and the P54b that are connected with the CP2 conductor.

Equally, in the NC conductor, has the part N51b～N53b that is connected with the CN conductor.

The CP1 conductor that Figure 22 representes to be connected with capacitor and the structure of CP2 conductor and CN conductor.

The CP1 conductor have with Figure 17 in the positive terminal of capacitor 31 the coupling part CP11 and the CP12 that are connected, and have coupling part CP31 and the CP32 that is connected with the positive terminal of capacitor 33.The CN conductor is range upon range of across insulation board 94 and CP1 conductor subtend.Has the portion C N11～CN42 that is connected with the negative terminal of all capacitors 31～34 in the CN conductor.As shown in the figure, through capacitor terminal coupling part CP32 and CN41 are close and relatively to, to realize the electric current equalization and to reduce wiring inductance.

In addition, the CP2 conductor is range upon range of relatively across insulation board 95 and CN conductor.To this conductor, the coupling part CN32 through making capacitor terminal coupling part CP41 and CN conductor relatively to, to realize the electric current equalization and to reduce wiring inductance.

And, in the explanation of Figure 17,, use the conductor described in two picture groups 11 to Figure 16 in principle in the semiconductor module side, but each conductor shown in Figure 20 and per two being integrally formed of conductor shown in Figure 14.This be because; Shown in figure 17; The positive terminal and the negative terminal of the positive terminal of semiconductor module 111 and negative terminal and semiconductor module 113 are located on the same line in fact, and the positive terminal of the positive terminal of semiconductor module 112 and negative terminal and semiconductor module 114 and the cause that negative terminal in fact also is located on the same line.In addition, too in the capacitor side.

And Figure 18 is an example to wire structures shown in Figure 22, and being provided with etc. of splicing ear midway can be carried out various variations.Through in the coupling part, there not being range upon range of part to be arranged alternately side of the positive electrode and negative side, has the effect that reduces the wiring inductance in the high-frequency current.

In addition; Adopted laminated conductor (P13 conductor, N conductor, P24 conductor), (the PC conductor of laminated conductor midway that is connected with semiconductor module at this; The NC conductor) and the laminated conductor that is connected with capacitor (CP1 conductor; CN conductor, CP2 conductor) these three laminated conductor groups, but according to the difference of the relation of the position between semiconductor module and the smmothing capacitor, also can constitute by a laminated conductor sometimes.

Followingly the fourth embodiment of the present invention is described with reference to Figure 23 and Figure 24.

Present embodiment is represented the cloth line mounting structure of two semiconductor modules that are connected in parallel 111 of the built-in all-in-one-piece of underarm and 112.At this moment, in smmothing capacitor, anodal and negative pole is made up of two groups of terminal CP1～CN2, connects semiconductor module and smmothing capacitor with one group of laminated conductor.Shown in figure 23, the positive terminal P1 of the semiconductor module 111 in left side is positioned at the upper left side, and negative terminal N1 is positioned at its lower right.On the other hand, the positive terminal P2 of top-right semiconductor module 112 be positioned on the right side of figure with N1 relatively to the position, negative terminal N2 be positioned at the P1 of left downside relatively to the position.The anodal conductor 711 of Figure 23 and Figure 24 connects the positive terminal P1 of semiconductor module 111 and the positive terminal CP1 of capacitor.Another anodal conductor 712 connects the positive terminal of semiconductor module 112 and the positive terminal CP2 of capacitor.Be clipped in two anodal conductors 711 with 712 and not shown insulation board in the middle of cathode conductor 72 be connected two the negative terminal CN1 and the CN2 of two negative terminal N1 and the N2 and the capacitor of semiconductor module.

In the present embodiment; The common sparing that does not have anodal conductor shown in Figure 1; But make P1 coupling part and the coupling of N2 coupling part magnetic through the subtend part 81 that surrounds with dotted line in the drawings; And make P2 coupling part and the coupling of N1 coupling part magnetic in subtend part 82, can realize the electric current equalization of semiconductor module and reduce wiring inductance.

In addition, shown in figure 24, side of the positive electrode conductor 711,712 is identical with the width of negative side conductor 72, this be because, take structure like this can make the reciprocal electric current of wider width part also form subtend, strengthening magnetic-coupled degree, thereby can reduce wiring inductance.If wiring inductance is reduced fully, then not necessarily need form the wider width part.

The fifth embodiment of the present invention below is described.

(situation of 11P～13N among Fig. 3 or 21P～23N) be made up of a module describes below just to constitute the switch element of 2 * 3 phases up and down of inverter.

Figure 25 is illustrated in the module that six switch elements form the situation that switch element is arranged in two row.

In Figure 25, the terminal that two modules 101 and 102 are configured to its both sides forms a line respectively, and as dotted line surrounds among the figure, is connected in parallel.If only see from two modules wherein, then no problem, if but from converter whole (three-phase),, thereby cause the whole oversized of converter if transversely arranged one-tenth one row then can make the length of transverse direction increase considerably, volume increases.

On the other hand, if according to shown in Figure 26, the side that two modules are arranged to have P terminal and N terminal relatively to form, then can form size uniform shape in length and breadth.In Figure 26; In the two row switch elements that constitute the W phase and since WP1 and WN2 relatively to, WP2 and WN1 relatively to; Make it produce the magnetic coupling so form the structure identical, then can obtain the effect that reduces the even property of current unevenness with Figure 23 through wiring conductor with this part.

And, shown in figure 27, be connected in parallel through making each all cross over two modules mutually; Make UP1 and UN2 relatively to, UP2 and UN1 relatively to, VP1 and VN2 relatively to; VP2 and VN1 relatively to, WP1 and WN2 relatively to, WP2 and WN1 relatively to; Thereby make its wiring conductor produce the magnetic coupling, then can obtain the effect that reduces the even property of current unevenness.And; When Figure 26 and Figure 27 are compared; When the current capacity of the switch element that causes a certain phase because of ultra low speed operation (ULF energising) is concentrated, because being provided with, 2 row leap modules are beneficial to heat radiation, so the viewpoint that rises from the inhibition temperature is comparatively favourable.

Followingly the sixth embodiment of the present invention is described with reference to Figure 28 to Figure 33.

Figure 28 representes the power conversion unit of the sixth embodiment of the present invention.Among the figure, semiconductor module 111 and 112 is connected in parallel, and also is connected in parallel as DC power supply smmothing capacitor 31 and 32 partly.Semiconductor module 111 is made up of side of the positive electrode 11P1 and negative side 11N1, and semiconductor module 112 is made up of side of the positive electrode 11P2 and negative side 11N2.

At this; The conductor part that is connected with the first positive terminal P1 produces magnetic coupling (811) each other with the conductor part that is connected with the second negative terminal N2, and the conductor part that is connected with the second positive terminal P2 produces magnetic coupling (812) each other with the conductor part that is connected with the first negative terminal N1.

This magnetic coupling unit 811 has magnetic flux checkout gear 27, is sent to as voltage Vq1 by the variation that differs from the magnetic flux ψ q1 that produces between l1 and the l2 and detects judgment part 202.Thus, the information of the even property of current unevenness is sent to gate driver circuit 51 or 52, and in grid circuit, regulates to suppress the inhomogeneities of electric current.In addition, when judging that appearance is unusual, can also abnormal signal be sent to converter control circuit 50 so that equipment stops or equipment is limited.

And, also can detect the magnetic flux change of another conductor coupling unit 812, but only need one is detected, just can detect the inhomogeneities of electric current.

To smmothing capacitor; Make conductor part that is connected with the positive terminal C1P of first capacitor and the conductor part that is connected with the negative terminal C2N of second capacitor produce magnetic coupling (831) each other, the conductor part that is connected with the positive terminal C2P of second capacitor produces magnetic coupling (832) each other with the conductor part that is connected with the negative terminal C1N of first capacitor.And be directed against the conductor that connects capacitor part and semiconductor module part on the whole, make side of the positive electrode conductor and negative side conductor produce magnetic coupling (804) near also mutual subtend each other, thereby reduce wiring inductance.

The magnetic flux checkout gear 28 of the terminal conductor coupling unit 831 through smmothing capacitor detects the variation of the ψ c1 of magnetic flux, and voltage Vc1 is sent to capacitor part magnetic flux detects judgment part 201.Detect the even property of current unevenness of smmothing capacitor 31 and 32 thus,, anomaly detection signal is sent to converter control circuit 50 so that equipment stops detecting when unusual.

And, also can detect the magnetic flux change of another conductor coupling unit 832, but only need one is detected, just can detect the inhomogeneities of electric current.

The following action that present embodiment is described with reference to Figure 29 and Figure 30.

Figure 29 and Figure 30 represent the state that refluxed in negative side from originally, to side of the positive electrode IGBT(2 row side by side) conducting and make (T2) waveform during back inflow side of the positive electrode IGBT of negative side backflow diode reverse recovery (reverserecover, reverse recovery) when time point T1.

Uppermost figure representes DC power supply electric current lc1, lc2, the magnetic flux ψ c1 of second figure expression magnetic flux checkout gear 27 part; The voltage Vc1 of the 3rd figure expression magnetic flux checkout gear 27, the positive terminal electric current lp1 of the 4th figure expression side of the positive electrode IGBT, lp2; The negative terminal electric current ln1 of the 5th figure expression negative side IGBT; Ln2, the magnetic flux ψ q1 of the 5th figure expression magnetic flux checkout gear 25 parts, nethermost figure representes the voltage Vq1 of magnetic flux checkout gear 25.

Figure 29 representes the very little situation of inhomogeneities of electric current between inhomogeneities and the IGBT of electric current between power supply 31 and 32.

During T1～T2, because dlc1/dt＞dlc2/dt, though Vc1＞0, difference is little, so the value of Vc1 is less than threshold value (threshold), so be judged as not unusual.

Equally; Since the electric current lp1 of side of the positive electrode IGBT, the cathodal current ln1 of lp2 and negative side IGBT (being actually the backflow diode), and the inhomogeneities of electric current is little between the ln2; The detection voltage Vq1 of magnetic flux checkout gear 27 is less than detection threshold, so do not send regulating command to grid circuit.

On the other hand, in Figure 30, during T1～T2, because dlc1/dt＞＞dlc2/dt, the variation of ψ c1 is big, and the value of Vc1 surpasses threshold value, thus, can detect the even property of big current unevenness.When this state continuance occurred, then fault possibly appear in the power supply of a side (capacitor), therefore power conversion unit was stopped.

Equally, about IGBT electric current lp1, lp2 too; Because dlp1/dt＞＞dlp2/dt=dln2/dt, the variation of ψ q1 is big, and the value of Vq1 surpasses threshold value; Thus, through grid circuit is regulated, suppress the electric current of lp1 side; The electric current of lp2 side is increased, can suppress the even property of current unevenness at T2 time point place.And the control method of grid circuit can use disclosed technology formerly such as patent documentation 2.

In addition, in being connected in parallel, if open fault, then the even property change of current unevenness is big, can detect through present embodiment, and the command signal that will abend from detection judgment part 202 shown in Figure 28 sends to converter control circuit 50.

Figure 31 to Figure 33 representes the mounting structure of present embodiment.

Figure 31 is the vertical view of semiconductor module 111,112 and smmothing capacitor 31,32, Figure 32 be the A-A ' of Figure 31 locate to view and B-B ' locate to view, Figure 33 be the C-C ' of Figure 31 locate to view.

As shown in the figure; The approaching each other and mutual subtend in coupling part of the coupling part of the positive terminal P1 of semiconductor module 111 and the first positive pole wiring conductor 711 and the negative terminal N2 of another semiconductor module 112 and negative pole wiring conductor 72, and the magnetic flux checkout gear 27 that detects this part magnetic flux is installed.

The approaching each other and mutual subtend in the coupling part of the negative terminal C2N of the coupling part of the positive terminal C1P of first smmothing capacitor 31 and second smmothing capacitor 32, and the magnetic flux checkout gear 28 that detects this part magnetic flux is installed.

In the mounting structure example of this explanation; Two side of the positive electrode wiring conductors 711 and 712 do not have common sparing; So the side of the positive electrode wiring conductor that does not have the described integral body of Figure 28 and negative side wiring conductor each other near and the part 804 of mutual subtend, but the situation that has a common sparing is too.

So, the variation of the magnetic flux that electric current produced of electric current through detecting positive terminal and the negative terminal arranged side by side with it can be controlled suppressing the inhomogeneities of electric current, and can detect unusual.For this reason, can improve reliability, reduction needs the inhomogeneities of the electric current of processing, thereby makes equipment miniaturization.

Claims (5)

1. power conversion unit, it has first and second circuit at least, this first and second circuit have positive pole and negative pole, this power conversion unit is characterised in that to have:

First conductor that is connected with the said positive pole of said first circuit;

Second conductor that is connected with the said negative pole of said first circuit;

The 3rd conductor that is connected with the said positive pole of said second circuit;

The 4th conductor that is connected with the said negative pole of said second circuit;

The magnetic flux checkout gear, it detects the magnetic flux that produces because of the subtend electric current partly that flows through said first conductor and said the 4th conductor; And

The subtend part of said second conductor and said the 3rd conductor.

2. power conversion unit according to claim 1 is characterized in that, said magnetic flux checkout gear is the annulus that surrounds the said subtend part of said first conductor and said the 4th conductor.

3. power conversion unit according to claim 2 is characterized in that said annulus has the magnetic core.

4. according to each described power conversion unit in the claim 1 to 3, it is characterized in that said first circuit and said second circuit are respectively two circuit that the inverse parallel connecting circuit is connected in series and forms that are made up of thyristor and diode.

5. according to each described power conversion unit in the claim 1 to 3, it is characterized in that said first circuit and said second circuit are respectively DC power supply circuits.

Images