CN101308755B

CN101308755B - Plane emission type cathode construction of field emission display apparatus

Info

Publication number: CN101308755B
Application number: CN2007101070232A
Authority: CN
Inventors: 郭志彻
Original assignee: Teco Electric and Machinery Co Ltd
Current assignee: Teco Electric and Machinery Co Ltd
Priority date: 2007-05-17
Filing date: 2007-05-17
Publication date: 2010-06-09
Anticipated expiration: 2027-05-17
Also published as: CN101308755A

Abstract

Disclosed is a planar emitting cathode structure for a field emission display. The cathode structure comprises a cathode baseplate; a plurality of cathode units are arranged on the cathode baseplate, each of which is compose of an emitter layer, a grid layer and a dielectric layer; wherein the emitter layer and the grid layer are coplanarly arranged on the cathode baseplate, corresponding to each other at interval; meanwhile, the dielectric layer is arranged in the interval between the emitter layer and the grid layer, leaving spaces between the emitter layer and the dielectric layer and between the grid layer and the dielectric layer, thus changing the electric field distributions of the emitter layer and the grid layer.

Description

The planar transmit formula cathode construction of Field Emission Display

Technical field

The present invention relates to a kind of field emission device, particularly a kind of minus plate structure of coplane moulding.

Background technology

In recent years, because the characteristic that flat-panel screens (Flat Panel Display) has gently, approach, and even in the performance of image quality, resolution and brightness, more be better than traditional tv, so its demonstration that is widely used in different size need be asked, little of mobile phone screen, to outdoor billboard, all can see the application of flat-panel screens greatly, make flat-panel screens on market, receive much concern.

Therefore various dissimilar flat-panel screens are constantly released on market, comprise LCD (LCD), plasma display (PDP), organic light emitting diode display (OLED) and field emission type display (FED) etc.; Particularly field emission type display (FED) is one of kind of emerging in recent years flat-panel screens, and its principle is to utilize the cathode electronics emission source that is provided with in the internal structure to produce electron beam, thereby clashes into pairing fluorescence coating to produce light.

The field emission type display of three-stage structure comprises positive plate, minus plate and is positioned at grid layer between the yin, yang pole plate in the conventional art, wherein this grid layer provides the current potential of the electronics that attracts this minus plate generation, provide high potential by anode conductive layer again, thereby the acceleration kinetic energy of electronics is provided, produces light to clash into this positive plate.

Yet, though above-mentioned traditional structure can make this field emission type display normally luminous,, and be adjacent on the set emitter-base bandgap grading of this minus plate because the design of grid layer is to be set directly between this minus plate and the positive plate, caused this minus plate comparatively complicated on making, and the cost height; Therefore, prior art afterwards is in order to reduce cost and to improve the defective of said structure on making, develop and a kind of emitter-base bandgap grading and grid and be arranged on cathode construction on the same plane, as disclosed among the U.S. Patent Publication No. US6891320, change tradition and utilized the stacked cathode construction that mode constituted, not only comparatively simple and easy on manufacturing process, but also can reduce its cost of manufacture.

The design of above-mentioned coplanar structure is formed in emitter-base bandgap grading and grid on the cathode base, has reducing cost and simplifies advantage such as manufacturing process, but caused influence for the electric field of the grid along continuous straight runs attraction electronics that emitter-base bandgap grading produced; Because the vector of gate surface electric field directly influences the quantity and the direction of this field emission electron, under the same potential condition, the interval of emitter-base bandgap grading and grid is big more, the intensity that acts on the emitter-base bandgap grading surface field is just relatively more little, therefore cause the electron production efficient of emitter-base bandgap grading to reduce, directly have influence on the illumination effect of this field emission device.

Though the formed interval of emitter-base bandgap grading and grid can utilize the semiconductor fabrication process to be reduced to below several microns, but also can improve its cost of manufacture relatively, and under the same potential situation, if emitter-base bandgap grading and gate spacer are too small, then under two electric field reciprocal effects, be subjected to grid to attract to accelerate to anode the part free electron that emitter-base bandgap grading is discharged, move and produce leakage phenomenon to the grid direction on the contrary.If utilize thick film manufacturing process, though can reduce cost of manufacture, but the interval of this emitter-base bandgap grading and grid can be printed panel accuracy influence and must remain on more than the tens of micron, otherwise be out of shape after will producing the flatness problem of emitter-base bandgap grading and grid structure or material sintering, this emitter-base bandgap grading and grid can't be acted on, and in order to remedy this kind emitter-base bandgap grading that manufacturing process causes and the excessive problem of gate spacer, the current potential that must improve positive plate is to obtain the bigger electric field strength of positive plate target plate.Therefore,, the defective on the minus plate coplanar structure all can occur being used in, certainly will will seek new mode and solve no matter select any manufacturing process.

Summary of the invention

At above-mentioned defective, the present invention mainly provides a kind of planar transmit formula cathode construction of Field Emission Display, this cathode construction has cathode base, this cathode base is provided with a plurality of cathode electrode units, this cathode electrode unit comprises emitter layer, grid layer and dielectric layer, wherein be arranged on the cathode base this emitter layer and grid layer coplane, and corresponding mutually the separation and the formation interval, in addition, this dielectric layer is arranged in this emitter layer and the formed interval of grid layer, and form the gap and non-adjacency with this emitter layer and grid layer respectively, thereby form the coplanar structure of this cathode construction.

Compared with prior art, the beneficial effect of the planar transmit formula cathode construction of Field Emission Display of the present invention is, by in coplane setting, mutual correspondence and emitter layer that separates and the formed interval of grid layer, dielectric layer being set, can change the Electric Field Distribution state of emitter layer and grid layer, because coplanar structure can directly be produced on the cathode base, therefore can reduce the cost of this manufacturing process simultaneously.

Description of drawings

Fig. 1 is the structure cutaway view of one embodiment of the invention;

Fig. 2 is the structure cutaway view of an alternative embodiment of the invention;

Fig. 3 (A) to Fig. 3 (D) be Electric Field Distribution schematic diagram of the present invention;

Fig. 4 is the curve chart of emitter-base bandgap grading release current of the present invention and grid voltage.

In the accompanying drawings, the list of parts of each label representative is as follows:

Cathode construction 1 cathode base 11

Cathode electrode unit 12 emitter layers 121

Grid layer 122 dielectric layers 123

Cathode conductive layer 124 intervals 125

Embodiment

Below with reference to description of drawings content of the present invention.

Fig. 1 is the structure cutaway view of one embodiment of the invention.As shown in Figure 1, cathode construction 1 has cathode base 11, cathode base 11 is provided with a plurality of cathode electrode units 12, thereby common corresponding anode, each cathode electrode unit 12 comprises emitter layer 121, grid layer 122, dielectric layer 123 and cathode conductive layer 124, wherein be arranged on the cathode base 11 emitter layer 121 and grid layer 122 coplanes, and emitter layer 121 is electrically connected cathode conductive layer 124 respectively with grid layer 122, thereby path as conduction, and emitter layer 121 is separated from each other corresponding on cathode base 11 with grid layer 122 and forms interval 125, emitter layer 121 remains on 50 μ m with the interval 125 of grid layer 122 in the present embodiment, in addition, at the thickness of emitter layer on the cathode base 11 121 and grid layer 122 between 1 μ m～25 μ m.

In addition, dielectric layer 123 is arranged in the interval 125 that forms between emitter layer 121 and the grid layer 122, and with emitter layer 121 and grid layer 122 coplanes be arranged on the cathode base 11, simultaneously dielectric layer 123 keeps certain interval respectively with adjacent emitter layer 121 and grid layer 122, and dielectric layer 123 does not join with emitter layer 121 or grid layer 122, wherein this gap remains between 5～15 μ m, and in the present embodiment, dielectric layer 123 is made of the material that contains glass ingredient, as glass cement, and this material is a dielectric constant more than or equal to 7 insulating material, in addition, the thickness of dielectric layer 123 is 0.5 times to 1.5 times of emitter layer 121 thickness, shown in Figure 1 as in the present embodiment, the thickness of dielectric layer 123 is greater than the thickness of emitter layer 121 with grid layer 122, or as shown in Figure 2, the thickness of dielectric layer 123 is less than the thickness of emitter layer 121 with grid layer 122.

Fig. 3 (A) and Fig. 3 (B) are Electric Field Distribution comparison diagram of the present invention.Fig. 3 (A) is the distribution of its electric field under the situation of no dielectric layer 123, Fig. 3 (B) is the distribution of its electric field under the situation that dielectric layer 123 is arranged, this Electric Field Distribution concentrates in emitter layer 121 and the grid layer 122 formed intervals 125 in Fig. 3 (A), thereby make electronics that emitter layer 121 the produced pairing anode of directive fully, and cause leakage phenomenon; And in Fig. 3 (B), in emitter layer 121 and grid layer 122 formed intervals 125, dielectric layer 123 is set as can be seen, 125 Electric Field Distribution density decreases at interval, after making that the electronics of emitter layer 121 is attracted out, can be successfully by potential attraction that anode had and impinge anode, therefore, by dielectric layer 123 coplanes be arranged between emitter layer 121 and the grid layer 122, not only simplified the manufacturing process of cathode construction 1, dielectric layer 123 also can be used as the obstruct of 122 of emitter layer 121 and grid layers, change the Electric Field Distribution density of 122 of emitter layer 121 and grid layers, thereby the electronics that intercepts emitter layer 121 moves to grid layer 122, reduces the leakage phenomenon on the cathode construction 1; In addition, in conjunction with Fig. 3 (C) and Fig. 3 (D), the dielectric layer 123 of differing dielectric constant is set, as the dielectric constant of dielectric layer 123 set among present embodiment Fig. 3 (D) dielectric constant, make the Electric Field Distribution density of contiguous emitter-base bandgap grading 121 among Fig. 3 (D) greater than the Electric Field Distribution density of contiguous emitter-base bandgap grading 121 among Fig. 3 (C) greater than dielectric layer 123 among Fig. 3 (C).

Therefore, in conjunction with Fig. 3 (B) to Fig. 3 (D) and Fig. 4, under the influence of the dielectric layer 123 of differing dielectric constant, the Electric Field Distribution density of emitter layer 121 with grid layer 122 will be changed, as shown in Figure 4, when grid layer 122 applies identical voltage, under the influence of the big more dielectric layer 123 of dielectric constant, the electric current that emitter layer 121 is discharged is big more.

Above-mentioned execution mode is the preferred embodiments of the present invention, but can not limit practical range of the present invention with this, and the equivalence of doing according to claim of the present invention and description changes or modifies, and all should belong to patent covering scope of the present invention.

Claims

1. the planar transmit formula cathode construction of a Field Emission Display comprises:

Cathode base;

A plurality of cathode electrode units are arranged on the described cathode base, and described cathode electrode unit comprises:

Emitter layer;

Grid layer, with described emitter layer coplane be arranged on the described cathode base, and mutually corresponding with described emitter layer and separate setting, form fixed intervals simultaneously; Cathode conductive layer is electrically connected emitter layer and grid layer respectively, thereby as the path of conducting electricity;

Dielectric layer is arranged in the formed interval of described emitter layer and grid layer, and with described emitter layer and grid layer coplane be arranged on the described cathode base, described dielectric layer and described emitter layer and grid layer form the gap respectively.

2. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the wherein said 50 μ m that are spaced apart.

3. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the thickness of wherein said emitter layer and grid layer is between 5 μ m～15 μ m.

4. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, wherein said dielectric layer is made of the material that contains glass.

5. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, wherein said dielectric layer is made of glass cement.

6. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the dielectric constant of wherein said dielectric layer is more than or equal to 7.

7. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the thickness of wherein said dielectric layer are between 0.5 times～1.5 times of emitter layer thickness.

8. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the thickness of wherein said dielectric layer is greater than the thickness of emitter layer.

9. the planar transmit formula cathode construction of Field Emission Display as claimed in claim 1, the thickness of wherein said dielectric layer is less than the thickness of emitter layer.