CN100367445C - Quadrupole field emission display and making method thereof - Google Patents
Quadrupole field emission display and making method thereof Download PDFInfo
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- CN100367445C CN100367445C CNB2004100089100A CN200410008910A CN100367445C CN 100367445 C CN100367445 C CN 100367445C CN B2004100089100 A CNB2004100089100 A CN B2004100089100A CN 200410008910 A CN200410008910 A CN 200410008910A CN 100367445 C CN100367445 C CN 100367445C
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Abstract
The present invention provides a quadrupole field emission display and a making method thereof. Mainly, a guard is arranged between an anode plate and a cathode plate. The guard is provided with a gate electrode layer and a convergence electrode layer. The gate electrode layer and the convergence electrode layer are divided by an insulation layer to form an independent three-layer structure body. A plurality of through holes are arranged on the guard, and each through hole corresponds to each group of cathode and anode units. The convergence electrode layer of the guard faces the anode plate. Electronic beams emitted from an electron emission source can limit and reduce diffuse amplitude through the convergence electrode to cause the electronic beam to accurately impact a corresponding anode area.
Description
Technical field
The present invention relates to a kind of structure and manufacture method thereof of Field Emission Display, relate in particular to a kind of Field Emission Display of in known three utmost points (negative electrode, anode and gate) structure, setting up the 4th utmost point (promptly restraining the utmost point).
Background technology
In recent years, flat-panel screens (Flat Panel Display, FPD) very in vogue on market, various types of flat-panel screens also constantly occur on market, include Field Emission Display (FED), LCD (LCD), plasma display panel (PDP), organic light emitting diode display (OLED) or the like.Light and thin is the common feature of these flat-panel screens, and according to the different qualities (as size and brightness etc.) of various flat-panel screens, some is fit to be applied to the small size panel, as mobile phone and PDA(Personal Digital Assistant); During some is fit to be applied to, big molded dimension such as computer, TV etc.; Or be applied to ultra-large type size such as outdoor billboard.The development of various flat-panel screens technology, its purpose all are that hope can reach characteristics such as having high image quality, big picture, low cost and long service life concurrently.
Wherein, Field Emission Display is one of emerging in recent years flat-panel screens, its reason is that it has the effect of self-lighting, need not to use in addition back light, compare with LCD, except that having preferable brightness performance, add broader visible angle scope, power consumption is low, advantages such as reaction speed fast (not staying ghost) and operating temperature are wider, the image quality that it presented is similar to traditional cathode ray tube (CRT) display very much, and its volume is light more than cathode ray tube, thin, therefore, Field Emission Display becomes that the rising star who replaces LCD and plasma display panel is real to be thing within sight.Because developing rapidly of nanometer technology is applied in nano material in the Field Emission Display in recent years, shape promotes it to develop into ripe commodity more.
Fig. 1 is a kind of cutaway view of Field Emission Display of known three-stage structure.Its structure mainly comprises positive plate 10 and minus plate 20.Be provided with eyelid retractor (spacer) 14 between positive plate 10 and the minus plate 20, provide the interval of vacuum area between positive plate 10 and the minus plate 20 and as the support between positive plate 10 and the minus plate 20.Positive plate 10 comprises an anode substrate 11, an anode conductive layer 12 and a fluorescent powder coating (phosphors layer) 13.Minus plate 20 comprises a cathode base 21, a cathode conductive layer 22, an electron emission source layer 23, a dielectric layer 24 and a gate layer 25.Wherein, gate layer 25 has a potential difference and is used for attracting the electronics of electron emission source layer 23 to penetrate, the high voltage that is provided by anode conductive layer 12 provides the acceleration of electron beam, makes electronics have fluorescent powder coating 13 on enough kinetic energy bump (impinge) positive plates 10 to excite and makes it luminous.Thus, for electronics is moved in Field Emission Display, need display be kept the following vacuum degree of 10-5 holder (torr) at least with vacuum equipment, make electronics obtain a good mean free path (mean freepath), should avoid the pollution in electron emission source and fluorescent material district simultaneously and poison.In order to make electronics have enough energy to remove to clash into fluorescent material, between two plates, appropriate gap need be arranged, make electronics have enough accelerating spaces to clash into fluorescent powder, reach and make the fluorescent material physical efficiency fully produce luminescent effect.
The structure of known electron emission source layer is many with a kind of cutting-edge structure (as shown in Figure 1), or a kind of Spindt Type (see " membrane field emission cathode " (A Thin-Film Field-EmissionCathode) literary composition of No. the 7th, volume in Applied Physics journal (Journal of Applied Physics) June nineteen sixty-eight the 39th, or No. the 3665241st, United States Patent (USP) and No. 3755704 etc.), this structure is made into the structure of pointed shape with thin film fabrication technology or little shadow manufacturing process, continuous development along with thin film fabrication technology, the various constantly modified and propositions of Field Emission Display structure that comprise Spindt type, thisly attract the mode of electronics often to guide out the curve that electron beam path presents a kind of minor radius at the tip by electric field, therefore revise the cross-sectional sizes of electron beam at the many control electrodes that can add various forms of this known Field Emission Display structural design, or the guiding correct path makes electron beam can accurately clash into the tram of fluorescent material, therefore remove the cutting-edge structure setting of using electron emission source on the structure, again in conjunction with the setting of various control electrodes, how with film, the complicated structure and the manufacturing method thereof of little shadow or micro electronmechanical manufacturing process are made, also can quote the unit in the micro electromechanical structure, but with regard to the demand of larger display field, though the Field Emission Display under this architecture basics from the nineteen sixty development so far, but because this structure and manufacture process get over complexity, be difficult to the requirement that produces economic benefit and reach high yield, its control circuit of arranging in pairs or groups is also more complicated, cause manufacturing cost too high, still be difficult to make the demand that reaches the high yield quantification and the marketization of this series products so far.
A kind of in recent years new CNT (carbon nano-tube) material (Carbon nanotube) was proposed back (nature in 1991 (Nature) magazine) from 1991 by Iijima, because this material has high-aspect-ratio (aspectratio), high mechanical properties, is difficult for being poisoned (high chemical resistance), is difficult for abrasion, hangs down and open lock electric field characteristics such as (threshold electric field), become the material of a kind of field emitting electronic source (fieldemission electrons), by research (seeing science (Science) magazine of nineteen ninety-five) widely.Wherein, field electronics emission utilizes a kind of high electric field (high electricfield) that is applied to material surface, the thickness of the energy barrier (energy barrier) of material is reduced, make the electronics can be by quantum-mechanical channelling effect (Quantum-mechanical tunnelling effect), from material surface disengaging becoming free electron (seeing the Applied Physics journal of above-mentioned nineteen sixty-eight), therefore the electric current of an electronics emission can be had the surface of low working function and be improved effect by material.This electron production mode realizes by this material is bestowed an electric field, need not provide certain thermal source to material, so this class field electron emitting device have the title of cold cathode (cold cathode).Therefore this class CNT (carbon nano-tube) is by the electron emission source of widespread usage at the Field Emission Display minus plate.
Because the modified and application that this CNT (carbon nano-tube) material still continues, electronics penetrates characteristic and constantly is enhanced, therefore at present this kind CNT (carbon nano-tube) can be with a kind of thick film manufacturing process (as screen printing or spray mode of printing) directly with CNT (carbon nano-tube) composition (patterning or patternize) on cathode conductive layer 22, to form electron emission source layer 23, can be with reference to No. the 502395th, China's patent announcement, its Field Emission Display that can effectively break away from this three-stage structure is subject to expensive thin film fabrication technology.And the mode of the electron emission source of this collocation CNT (carbon nano-tube), existing a kind of high efficiency electronics penetrates and (opens beginning electric field 1.5V/ μ m at current density 10 μ A/cm2 in known technology, operating current density at electric field 2.5V/ μ m can reach 10mA/cm2), it needs a kind of drive circuit cheaply of collocation can reach splendid animation display effect.But nonetheless, each electron emission source unit is made of a plurality of CNT (carbon nano-tube), the electron beam that it produced, in the distance of certain negative electrode and anode, similar with the electron beam that the electron emission source of cutting-edge structure is emitted, the electron beam 26 that respectively this CNT (carbon nano-tube) of being gathered in the unit is disengaged, its cross section more can more be dispersed to both sides near the path process of anode, as shown in Figure 2.And along with strengthening in the gap of anode and cathode, it is big that the cross section of its electron beam 26 also can become relatively, make the cross section of electron beam 26 greater than the light-emitting zone of anode fluorescent powder layer 13, even the electron beam 26 of diffusion might be pulled the trigger the fluorescent powder coating 13 of adjacent cells, thereby cause the colorimetric purity of picture that display presents not good, or the bad phenomenon of image quality resolution.Therefore, for avoiding the phenomenon of dispersing of electron beam, known technology also provides the scheme of some solutions to the cellular construction of each anode and cathode for this reason in design.
The first is directly reduced the relative area of cathode electronics emission source corresponding to anode fluorescent powder layer 13, or cathode electronics emission source layer 23 is separated division again, electron emission source by a plurality of more junior units constitutes, the region area of the fluorescent powder coating 13 that is excited of anode correspondence can be approached in electron beam 26 cross sections that each unit electron emission source 23 is produced, but the shaping-orientation of this mode often makes electron emission source layer 23 area dwindle, the electronics output efficiency lowers, or corresponding fluorescent powder coating 13 cellar areas are reduced, the gap of contiguous fluorescent powder coating 13 is strengthened, and makes screen resolution reduce.
It two is that gate 25 and 22 of cathode conductive layers in this three-stage structure provides the voltage that can modulate, make gate 25 except that having the function that electronics draws, mode that can also modulation voltage is controlled emitted electron beam 26 cross-sectional sizes (referring to No. the 5138237th, United States Patent (USP)).But this design can make the electronics output efficiency reduce, and the complex circuit designs degree is improved, and the picture reaction time increases, and reduces picture quality.
It three is control electrodes that a group or more is set between each field emission unit inner cathode and anode, this control electrode can provide a convergence voltage or a bias voltage may, make the cross section convergence of electron beam or make deflection, make electron beam can clash into the precalculated position of predetermined anode fluorescent powder layer 13, yet this design can make manufacture process too complicated, many with thin film fabrication technologies or yellow light lithography manufacturing process, be difficult to satisfy the demand that the high yield of large-sized monitor product quantizes.
Summary of the invention
Main purpose of the present invention is to provide a kind of Field Emission Display and manufacture method thereof of quaternary structure, it is that a gate layer and a convergence electrode layer are set between anode and negative electrode, form a kind of quaternary structure, by the 4th utmost point-convergence electrode-setting, restrain the degree of divergence of electron beam effectively, dwindle the cross section of cross section electron beam, make electron beam can clash into fluorescent powder coating accurately, but can not influence picture brightness, resolution and colorimetric purity, and not increase manufacturing cost.
Another object of the present invention is to provide a kind of Field Emission Display and manufacture method thereof of quaternary structure, it is to form the convergence electrode layer with a metallic conduction plate, gate and convergence electrode are laid in the both sides of this metallic conduction plate respectively, form a kind of guard (mesh) of three-decker.This guard can independent processing and manufacturing, encapsulate with cathode-anode plate again, has thoroughly solved in the prior art problem that the with high costs and lamination thickness of successively accumulating formation and being produced with little shadow manufacturing process at cathode base is difficult to uniformity.
A further object of the present invention is to provide a kind of Field Emission Display of quaternary structure, and it is that the difficulty that Field Emission Display is made reduces, and except can effectively reducing cost, is more suitable for big output and makes large-sized Field Emission Display.
To achieve these goals, the present invention mainly is provided with a guard between positive plate and minus plate, and this guard is provided with a gate layer and a convergence electrode layer, separates with an insulating barrier between gate layer and the convergence electrode layer, and formation one is three-layer structure independently.Offer a plurality of through holes on this guard, each through hole is corresponding to a cathode electrode unit and an anode unit.The convergence electrode aspect antianode plate of this guard makes by the emitted electron beam of electron emission source and can and dwindle it and disperse amplitude by the convergence electrode restriction.
The Field Emission Display of quaternary structure of the present invention and manufacture method thereof can make electron beam can clash into fluorescent powder coating accurately, can not influence picture brightness, resolution and colorimetric purity, and do not increase manufacturing cost, be suitable for big output production, and be suitable for making large-sized Field Emission Display.
Description of drawings
Fig. 1 is the cutaway view of the Field Emission Display of known three-stage structure;
Fig. 2 is that the electron beam of the Field Emission Display of known three-stage structure penetrates the path schematic diagram;
Fig. 3 is the cutaway view of the Field Emission Display of the embodiment of the invention;
Fig. 4 is the net cover structure schematic diagram of the Field Emission Display of the embodiment of the invention;
Fig. 5 is that the electron beam of the Field Emission Display of the embodiment of the invention penetrates the path schematic diagram;
Fig. 6 is the preferred embodiment cutaway view of convergence electrode layer through hole of the Field Emission Display of the embodiment of the invention;
Fig. 7 is another preferred embodiment cutaway view of convergence electrode layer through hole of the Field Emission Display of the embodiment of the invention.
In the accompanying drawing, the list of parts of each label representative is as follows:
10-positive plate 11-anode substrate
12-anode conductive layer 13-fluorescent powder coating
14-eyelid retractor 20-minus plate
21-cathode base 22-cathode conductive layer
23-electron emission source layer 24-dielectric layer
25-gate layer 26-electron beam
30-positive plate 31-anode substrate
32-anode conductive layer 33-fluorescent powder coating
34-eyelid retractor 40-minus plate
41-cathode base 42-cathode conductive layer
43-electron emission source layer 44-barrier rib
5-guard 51-convergence electrode layer
52-insulating barrier 53-gate layer
54-through hole 55-inactive area
551-contraposition mark
The 6-electron beam
Embodiment
Fig. 3 is the cutaway view of Field Emission Display of the present invention.It is made up of one group of cathode electrode unit and anode unit.The fluorescent powder coating 33 of each anode unit of positive plate 30 is attached on the anode conductive layer 32, and anode conductive layer 32 is attached on the anode substrate 31.The electron source emission layer 43 of each cathode electrode unit of minus plate 40 is attached on the cathode conductive layer 42, and cathode conductive layer 42 is attached on the cathode base 41.At 30 corresponding guards 5 that are installed with of minus plate 40 and positive plate, guard 5 has convergence electrode layer 51, insulating barrier 52 and gate layer 53 three-deckers.Convergence electrode layer 51 is in the face of positive plate 30, gate layer 53 faces cathode plates 40.Gate layer 53 and convergence electrode layer 51 all have suitable current potential.On guard 5, offer a plurality of through holes 54, be used to make electron beam to pass through by electron source emission layer 43 directive fluorescent powder coatings 33 corresponding to each cathode electrode unit and anode unit.
Between minus plate 40 and the gate layer 53 and between positive plate 30 and the convergence electrode layer 51, be respectively arranged with barrier rib 44 or eyelid retractor 34, barrier rib 44 is an equivalent with eyelid retractor 34, can replace mutually.But in quaternary structure of the present invention, thickness is set between minus plate 40 and gate layer 53 is about the barrier rib 44 of 10 μ m to 150 μ m for good, because it is used to provide evacuation passageway (Vacuum extraction path).Barrier rib 44 is arranged on 54 of each through holes of guard 5.Can select barrier rib or eyelid retractor to be separated arbitrarily in the convergence electrode layer 51 and the gap of anode substrate 31 and fixing, in this accompanying drawing, represent with eyelid retractor 34.
In quaternary structure Field Emission Display of the present invention, the path of its electron beam 6 as shown in Figure 5, after by gate layer 53 electronics attracting by electron emission source layer 43 (being negative electrode), be subjected to the attraction of anode to form electron beam 6 directive fluorescent powder coatings 33 (being anode), has a convergence current potential that is lower than the attraction current potential of gate layer 53 at convergence electrode layer 51, when electron beam 6 process convergence electrode layers 51, the degree of divergence in electron beam 6 cross sections promptly is limited, produce the effect of electron beam 6 convergences, electron beam 6 can be limited to clash into the presumptive area of fluorescent powder coating 33, and can not clash into the fluorescent powder coating 33 to adjacent unit because of excessively dispersing.
The manufacture method of guard 5 of the present invention is to select for use a kind of coefficient of expansion to approach the metallic conduction plate of anode and cathode substrate 31,41 (as the iron nickel carbon composite plate of a kind of coefficient of expansion about 82x10-7～86x10-7/ ℃, thickness is 150 μ m), be used for guaranteeing that guard 5 and anode and cathode substrate 31,41 reduce because of adding the generation that three's differences in expansion in the thermal expansion process causes the sliver situation in the Vacuum Package program.Offer a plurality of through holes 54 with laser or lithography technology on this metallic conduction plate, this metallic conduction plate is convergence electrode layer 51.Side surface at convergence electrode layer 51 is made an insulating barrier 52 with printing or little shadow manufacturing process composition (patterning or patternize), as with the glass gluing DG001 that company produced of Du Pont (DuPond), be printed on the convergence electrode layer 51 with mode of printing, its THICKNESS CONTROL is at 10～100 μ m, and insulating barrier 52 sintering are anchored on the convergence electrode layer 51.The outside of insulating barrier 52 uses printing, sputter, evaporation or little shadow manufacturing process composition (patterning orpatternize) to make a conductive layer again, as the silver-colored conducting glue DC206 that company produced of Du Pont (DuPond), be printed on insulating barrier 52 with mode of printing, its THICKNESS CONTROL promptly forms gate layer 53 thus at 4～10 μ m.The function of insulating barrier 52 is for intercepting the conducting of gate layer 53 and convergence electrode layer 51.Promptly finish the guard 5 with gate 53 and convergence electrode 51 of the present invention after making according to the method described above, guard 5 is a stand-alone assembly, can independent processing and fabricating, need not to be attached on the substrate.
The through hole 54 of the metallic conduction plate of guard 5 can be processed into given shape, to reach better effect.Be wherein a kind of as shown in Figure 6, this kind through hole 54 ' is the chamfering taper, its near the aperture of described positive plate side greater than aperture near described cathode-side.Be illustrated in figure 7 as second kind of through hole 54 " shape, through hole 54 " be hourglass shape, the hatch bore diameter of both sides is bigger, and the aperture, stage casing is less, forms shape with a tight waist.Above-mentioned two kinds of through holes 54 ', 54 " the aperture of narrow part be good all with diagonal distance greater than electron emission source layer 43.
The above is illustrating of embodiments of the invention only, but is not to be the embodiment that is used for limiting claim of the present invention, and any equivalent transformation that every utilization technical characterictic of the present invention is done includes in claim of the present invention.
Claims (16)
1. the Field Emission Display of a quaternary structure comprises:
One positive plate, the fluorescent powder coating that has anode substrate and on described anode substrate, be provided with;
One minus plate, the electron source emission layer that has cathode base and on described cathode base, be provided with corresponding to described fluorescent powder coating;
It is characterized in that, one guard is set between described positive plate and minus plate, described guard is provided with a gate layer, an insulating barrier and a convergence electrode layer, and described convergence electrode layer is made with a metallic conduction plate, lays described insulating barrier in the one side, lay a conductive layer at the lateral surface of described insulating barrier, described conductive layer promptly forms described gate layer, described convergence electrode aspect antianode plate, and have the convergence current potential, described gate layer faces cathode plate, and have the current potential of drawing; Offer a plurality of through holes on described guard, each through hole is corresponding to an electron source emission layer.
2. the Field Emission Display of quaternary structure as claimed in claim 1 is characterized in that reaching between described minus plate and the gate layer between described positive plate and the convergence electrode layer, is provided with barrier rib or eyelid retractor.
3. the Field Emission Display of quaternary structure as claimed in claim 2 is characterized in that described barrier rib reaches or eyelid retractor is arranged between each through hole.
4. the Field Emission Display of quaternary structure as claimed in claim 1, the periphery that it is characterized in that described metallic conduction plate is an inactive area, the appropriate position in described inactive area is provided with a plurality of contraposition marks.
5. the Field Emission Display of quaternary structure as claimed in claim 1 is characterized in that described through hole is the chamfering taper, and the aperture of its close described positive plate side is greater than the aperture near described cathode-side; Or described through hole is hourglass shape, and the hatch bore diameter of its both sides is bigger, and the aperture, stage casing is less.
6. the Field Emission Display of quaternary structure as claimed in claim 5, the aperture of close described cathode-side that it is characterized in that described through hole is greater than the diagonal distance of described electron emission source layer.
7. the manufacture method of the Field Emission Display of a quaternary structure is characterized in that, comprises the steps:
One anode substrate and a cathode base are provided;
Lay a plurality of cathode electrode units on described cathode base;
Lay a plurality of anode units on described anode substrate;
Making has the guard of gate layer and convergence electrode layer, wherein, described guard selects for use a kind of coefficient of expansion to approach the metallic conduction plate of described cathode and anode substrate, offer a plurality of through holes on described metallic conduction plate, described metallic conduction plate promptly forms the convergence electrode layer, at a side surface of described convergence electrode layer, make an insulating barrier, and described insulating barrier sintering is anchored on the convergence electrode layer, and make a conductive layer in the outside of described insulating barrier, described conductive layer promptly forms described gate layer;
Described guard is fixedly mounted between described cathode base and the anode substrate,
Wherein, described each through hole is corresponding to a described cathode electrode unit and a described anode unit, the described convergence electrode aspect antianode substrate of described guard.
8. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 7 is characterized in that described metallic conduction plate is an iron nickel carbon composite plate.
9. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 7 is characterized in that described through hole offers with laser or lithography technology.
10. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 7 is characterized in that described insulating barrier is with printing or the making of little shadow manufacturing process composition.
11. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 10 is characterized in that described insulating barrier is the glass gluing DG001 that E.I.Du Pont Company produced, and is printed on the convergence electrode layer with mode of printing.
12. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 7 is characterized in that described gate layer is with printing, sputter, evaporation or the making of little shadow manufacturing process composition.
13. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 12 is characterized in that described gate layer is the silver-colored conducting glue DC206 that E.I.Du Pont Company produced, and is printed on the insulating barrier with mode of printing.
14. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 7, it is characterized in that described through hole is the chamfering taper, its aperture near described positive plate side is a hourglass shape greater than aperture or described through hole near described cathode-side, the hatch bore diameter of its both sides is bigger, and the aperture, stage casing is less.
15. the manufacture method of the Field Emission Display of quaternary structure as claimed in claim 14, the aperture of close described cathode-side that it is characterized in that described through hole is greater than the diagonal distance of the electron emission source layer of described cathode electrode unit.
16. the manufacture method of Field Emission Display as claimed in claim 7 is characterized in that described guard can independent processing and manufacturing.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100089100A CN100367445C (en) | 2004-03-15 | 2004-03-15 | Quadrupole field emission display and making method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100089100A CN100367445C (en) | 2004-03-15 | 2004-03-15 | Quadrupole field emission display and making method thereof |
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| CN1670898A CN1670898A (en) | 2005-09-21 |
| CN100367445C true CN100367445C (en) | 2008-02-06 |
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| CN100372046C (en) * | 2004-03-15 | 2008-02-27 | 东元奈米应材股份有限公司 | Quadrupole field emission display and making method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5850120A (en) * | 1995-07-07 | 1998-12-15 | Nec Corporation | Electron gun with a gamma correct field emission cathode |
| US5889363A (en) * | 1996-10-04 | 1999-03-30 | International Business Machines Corporation | Display devices |
| US6354898B2 (en) * | 1998-01-12 | 2002-03-12 | Samsung Display Devices Co., Ltd. | Electric field emission display (FED) and method of manufacturing spacer thereof |
| CN1610050A (en) * | 2003-10-20 | 2005-04-27 | 诺利塔克股份有限公司 | Method of manufacturing flat display |
| CN1670897A (en) * | 2004-03-15 | 2005-09-21 | 东元奈米应材股份有限公司 | Quadrupole field emission display and making method thereof |
-
2004
- 2004-03-15 CN CNB2004100089100A patent/CN100367445C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5850120A (en) * | 1995-07-07 | 1998-12-15 | Nec Corporation | Electron gun with a gamma correct field emission cathode |
| US5889363A (en) * | 1996-10-04 | 1999-03-30 | International Business Machines Corporation | Display devices |
| US6354898B2 (en) * | 1998-01-12 | 2002-03-12 | Samsung Display Devices Co., Ltd. | Electric field emission display (FED) and method of manufacturing spacer thereof |
| CN1610050A (en) * | 2003-10-20 | 2005-04-27 | 诺利塔克股份有限公司 | Method of manufacturing flat display |
| CN1670897A (en) * | 2004-03-15 | 2005-09-21 | 东元奈米应材股份有限公司 | Quadrupole field emission display and making method thereof |
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