CN101303983A - Heat radiation type semiconductor encapsulation structure and manufacturing method thereof - Google Patents
Heat radiation type semiconductor encapsulation structure and manufacturing method thereof Download PDFInfo
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- CN101303983A CN101303983A CNA2007101074337A CN200710107433A CN101303983A CN 101303983 A CN101303983 A CN 101303983A CN A2007101074337 A CNA2007101074337 A CN A2007101074337A CN 200710107433 A CN200710107433 A CN 200710107433A CN 101303983 A CN101303983 A CN 101303983A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
The invention discloses a heat dissipation typed semiconductor encapsulation structure and a manufacturing method thereof. A chip load bearing component is equipped and electrically connected with at least a semiconductor chip and an encapsulation unit; a heat dissipation component with a flat part and a support part is connected to the top surface of the encapsulation unit through the flat part; the encapsulation unit and the semiconductor chip are contained in a containing space formed by the flat part and the support part of the heat dissipation component; an encapsulation colloid coating the encapsulation unit, the semiconductor chip and the heat dissipation component is formed on the chip load bearing component, therefore, the heat dissipation component is used for dissipating the heat of the encapsulation unit and providing screening effect to electromagnetic interference (EMI); meanwhile, the problems such as delamination, thermal resistance increasing and rhegma between the encapsulation unit and the encapsulation colloid which covers the encapsulation unit inside can be avoided.
Description
Technical field
The present invention relates to a kind of heat radiation type semiconductor encapsulation structure and method for making thereof, particularly relate to a kind of semiconductor package and method for making thereof for multiple package assembling structure efficiently radiates heat.
Background technology
Electronic product develops towards direction multi-functional, electrically high and high-speed cruising now, and for cooperating this developing direction, the semiconductor dealer there's no one who doesn't or isn't actively researches and develops the semiconductor device that can be integrated with a plurality of chips or packaging part, uses the demand that meets electronic product.
See also Fig. 1, than having the multicore chip package (Multi-chip Package) of in single packaging part, integrating a plurality of chips now, United States Patent (USP) the 6th, 798, (package in package pip), is that 11 structures of the packaging part behind testing electrical property are loaded in another packaging part 12 to disclose a kind of structure that is integrated with another packaging part in packaging part for No. 054, use known non-defective unit chip (Know Good Die, the KGD) problem in traditional multicore chip package that solve.
But for the packaging part that this structure is loaded on another packaging part inside, chip in it produces a large amount of heats often in operation, coat the packing colloid that multiple potting compound by the low heat emission coefficient (Mold Compound) is constituted again around right this chip, thereby can't effectively the heat loss be gone out, cause the electrical anergy of inner packaging part easily, very and also cause the electronic component of adjacency or the electrical anergy of semiconductor chip.
Moreover, see also Fig. 2, as I239058 number disclosed encapsulating structure of TaiWan, China patent, owing to contain a certain proportion of release agent (Moldrelease agent) in the general potting compound, for example cured (wax), after encapsulating mold pressing, to be easy to the demoulding, but this release agent that is used for the demoulding is attached to packaging part 21 surfaces easily, cause the potting compound of outer enclosure part 22 to combine with this packaging part 21, and cause delamination, thereby increase the thermal resistance of heat radiation, what is more, its delamination meeting causes the rhegma of outer enclosure part 22, thereby needs to form recess or roughened textures 210 on the surface of this packaging part 21, but so but increases manufacturing cost and complexity.
Therefore, how a kind of heat radiation type semiconductor encapsulation structure and method for making thereof are provided, can make structure be contained in the interior effective loss heat of package structure of another packaging part, and the problem of avoiding electrical anergy, delamination and thermal resistance to increase, and avoid outer enclosure part generation rhegma situation, really be the required problem of urgently facing on the association area.
Summary of the invention
In view of the defective of aforementioned prior art, a purpose of the present invention provides a kind of heat radiation type semiconductor encapsulation structure and method for making thereof, is contained in the effective loss heat of package structure in another packaging part for structure.
Another object of the present invention provides a kind of heat radiation type semiconductor encapsulation structure and method for making thereof, to avoid taking place electrical anergy problem.
Another purpose of the present invention provides a kind of heat radiation type semiconductor encapsulation structure and method for making thereof, to avoid outer enclosure part generation rhegma problem.
A multiple purpose of the present invention provides a kind of heat radiation type semiconductor encapsulation structure and method for making thereof, does not need inner packaging part is carried out recess or roughened, to reduce manufacturing cost and complexity.
For reaching aforementioned and other purpose, the method for making of heat radiation type semiconductor encapsulation structure of the present invention comprises: a chip bearing member is provided, puts and electrically connect semiconductor chip and at least one encapsulation unit of finishing encapsulation at least to connect on this chip bearing member; One heat sink with a par is provided, places this encapsulation unit end face so that the heat sink par connect; And encapsulate molding operation, on this chip bearing member, to form the packing colloid that coats this encapsulation unit, semiconductor chip and heat sink, wherein the area of this heat sink par is greater than this encapsulation unit top surface area, so that this encapsulation unit is covered by this heat sink par.
The present invention also discloses a kind of heat radiation type semiconductor encapsulation structure, comprising: a chip bearing member; At least one semiconductor chip connects and puts and be electrically connected to this chip bearing member; At least one encapsulation unit of finishing encapsulation connects and puts and be electrically connected to this chip bearing member; One heat sink has a par, places this encapsulation unit end face so that the heat sink par connect, and wherein the area of this par uses covering this encapsulation unit greater than this encapsulation unit top surface area; And a packing colloid, be formed on this chip bearing member, to coat this semiconductor chip, encapsulation unit and heat sink.
This heat sink also is provided with the support portion of extending from this par downwards, this support portion can connect by a viscose and place on this chip bearing member, this par then connects by a heat-conducting glue and places this encapsulation unit end face, and this semiconductor chip and encapsulation unit are located in the formed accommodation space in par and support portion of this heat sink, the heat that is produced when using the operation of this encapsulation unit of loss and semiconductor chip; Moreover, the support portion of this heat sink can connect on the grounding parts (ground) that places this chip bearing member by a conducting resinl, so that an electromagnetic interference (EMI) screening effect to be provided, also or this support portion can connect by a nonconducting heat-conducting glue and place on the semiconductor chip, heat for direct loss semiconductor chip, this heat sink can be formed with a plurality of support portions in addition, for connecing the grounding parts that places semiconductor chip and chip bearing member, using provides the encapsulating structure electromagnetic interference (EMI) to cover and the direct effect of loss semiconductor chip heat simultaneously; The edge, par of this heat sink is formed with at least one downward kink in addition, fastens and is positioned to avoid the displacement of heat sink on this encapsulation unit for this heat sink.
Therefore, heat radiation type semiconductor encapsulation structure of the present invention and method for making thereof, be on chip bearing member, to connect the encapsulation unit of putting and electrically connecting semiconductor chip at least and finish encapsulation, and a heat sink with par connect by its par place this encapsulation unit end face, on this chip bearing member, form again and coat this encapsulation unit, the packing colloid of semiconductor chip and heat sink, thereby by connecing the par of putting a heat sink on the encapsulation unit end face in structure is loaded on encapsulating structure, and this par area is of a size of greatly than the encapsulation unit end face, to promote the effect of encapsulation unit heat radiation, this encapsulation unit end face directly with its packing colloid that coats encapsulating structure is not wherein contacted, avoid taking place to each other delamination, thermal resistance increases and encapsulating structure rhegma problem; Moreover, this heat sink also is provided with the support portion of extending from this par downwards, this support portion can connect by a viscose and place on this chip bearing member, this support portion also can connect on the grounding parts (ground) that places this chip bearing member by a conducting resinl in addition, so that encapsulating structure electromagnetic interference (EMI) screening effect to be provided, also or this support portion can connect by a nonconducting heat-conducting glue and place on the semiconductor chip, heat for direct loss semiconductor chip, or this heat sink can be formed with a plurality of support portions, for connecing the grounding parts that places semiconductor chip and chip bearing member simultaneously, using provides the encapsulating structure electromagnetic interference (EMI) to cover and the direct effect of loss semiconductor chip heat simultaneously.
Description of drawings
Fig. 1 is a United States Patent (USP) the 6th, 798, No. 054 disclosed a kind of in packaging part structure the structural representation of another packaging part is housed;
Fig. 2 is TaiWan, China patent I, 987, No. 314 disclosed semiconductor package schematic diagrames;
Fig. 3 A to Fig. 3 C is the generalized section of heat radiation type semiconductor encapsulation structure of the present invention and method for making first embodiment thereof;
Fig. 4 is the generalized section of heat radiation type semiconductor encapsulation structure second embodiment of the present invention;
Fig. 5 is the generalized section of heat radiation type semiconductor encapsulation structure the 3rd embodiment of the present invention;
Fig. 6 is the generalized section of heat radiation type semiconductor encapsulation structure the 4th embodiment of the present invention;
Fig. 7 is the generalized section of heat radiation type semiconductor encapsulation structure the 5th embodiment of the present invention;
Fig. 8 and Fig. 9 are the generalized section of heat radiation type semiconductor encapsulation structure the 6th embodiment of the present invention.
The component symbol explanation
11,12 packaging parts
21 inner packaging parts
22 outer enclosure parts
210 ones or roughened textures
30 soldered balls
31 substrates
310 grounding parts
32 semiconductor chips
33 encapsulation units
34 packing colloids
35 heat sinks
351 pars
352 support portions
353 kinks
354 grooves
36 heat-conducting glues
37 viscoses
38 conducting resinls
39 heat-conducting glues
Embodiment
Below by particular specific embodiment explanation embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this specification disclosed.
First embodiment
See also Fig. 3 A to Fig. 3 C, be the generalized section of heat radiation type semiconductor encapsulation structure of the present invention and method for making thereof.
As shown in Figure 3A, provide one for example to be the chip bearing member of substrate 31, put and electrically connect semiconductor chip 32 and at least one encapsulation unit 33 of finishing encapsulation at least on this substrate 31, to connect.
This chip bearing member removes and can be graphic substrate 31, also can be lead frame.This semiconductor chip 32 can be electrically connected to this substrate as graphic routing mode, also can utilize to cover crystal type and be electrically connected to this substrate.This encapsulation unit 33 can be for example be the graphic previous spherical grid array type semiconductor packaging part of putting crystalline substance and encapsulation of having finished, also or for finishing the wire-frame type semiconductor package part of putting crystalline substance and encapsulation.
Shown in Fig. 3 B, a heat sink 35 with a par 351 is provided, place this encapsulation unit 33 end faces so that heat sink 35 pars 351 are connect.The area of this heat sink par 351 is greater than these encapsulation unit 33 top surface area, so that this encapsulation unit 33 is covered by this heat sink par 351.
This heat sink 35 for example is the copper sheet handled through melanism or through the aluminium flake of anode treatment, include 351 support portions 352 of extending again downwards in this fin 35 simultaneously from this par, be located in this fin par 351 and the support portion 352 formed accommodation spaces for this encapsulation unit 33 and semiconductor chip 32, and this par 351 is heat-conducting glues 36 and connect and place this encapsulation unit 33 end faces at interval, and this support portion 352 connects by a viscose 37 and places on this substrate 31.
Shown in Fig. 3 C, encapsulate molding operation, on this substrate 31, to form the packing colloid 34 that coats this encapsulation unit 33, semiconductor chip 32 and heat sink 35.
Follow-uply plant a plurality of soldered balls 30 in these substrate 31 bottom surfaces again, use being electrically connected to external device (ED).
By aforementioned method for making, the present invention also provides a kind of heat radiation type semiconductor encapsulation structure, comprising: one for example is the chip bearing member of substrate 31; At least one semiconductor chip 32 connects and puts and be electrically connected to this substrate 31; At least one encapsulation unit 33 of finishing encapsulation connects and puts and be electrically connected to this substrate 31; One heat sink 35 has a par 351, places this encapsulation unit 33 end faces so that heat sink par 351 connect, and wherein the area of this par 351 uses covering this encapsulation unit 33 greater than these encapsulation unit 33 top surface area; And a packing colloid 34, be formed on this chip bearing member 31, to coat this semiconductor chip 32, encapsulation unit 33 and heat sink 35.
This heat sink 35 is provided with 351 support portions 352 of extending from this par again downwards, this support portion 352 can connect by a viscose 37 and place on this substrate 31,351 of this pars connect by a heat-conducting glue 36 and place this encapsulation unit 33 end faces, and this semiconductor chip 32 and encapsulation unit 33 are located in the par 351 and support portion 352 formed accommodation spaces of this heat sink 35, the heat that is produced when using this encapsulation unit 33 of loss and semiconductor chip 32 operations.
Second embodiment
Other sees also Fig. 4, is the schematic diagram of heat radiation type semiconductor encapsulation structure second embodiment of the present invention, wherein understands for simplifying accompanying drawing and being convenient to, and the corresponding and same or similar element of previous embodiment is with same reference numeral.
The heat radiation type semiconductor encapsulation structure and the previous embodiment of present embodiment are roughly the same, main difference is that the support portion 352 of this heat sink 35 can connect on the grounding parts 310 (ground) that places this substrate 31 by a conducting resinl 38, so that an electromagnetic interference (EMI) screening effect to be provided.
The 3rd embodiment
Other sees also Fig. 5, is the schematic diagram of heat radiation type semiconductor encapsulation structure the 3rd embodiment of the present invention, wherein understands for simplifying accompanying drawing and being convenient to, and the corresponding and same or similar element of previous embodiment is with same reference numeral.
The heat radiation type semiconductor encapsulation structure and the previous embodiment of present embodiment are roughly the same, main difference is that the support portion 352 of this heat sink 35 can connect by a nonconducting heat-conducting glue 39 and places on the semiconductor chip 32, for the direct heat of loss semiconductor chip 32.
The 4th embodiment
Other sees also Fig. 6, is the schematic diagram of heat radiation type semiconductor encapsulation structure the 4th embodiment of the present invention, wherein understands for simplifying accompanying drawing and being convenient to, and the corresponding and same or similar element of previous embodiment is with same reference numeral.
The heat radiation type semiconductor encapsulation structure and the previous embodiment of present embodiment are roughly the same, main difference is that this heat sink 35 can be formed with a plurality of support portions 352, provide the encapsulating structure electromagnetic interference (EMI) to cover simultaneously and the direct effect of loss semiconductor chip heat for connecing the grounding parts 310 that places semiconductor chip 32 and substrate 31 simultaneously, using.
The 5th embodiment
Other sees also Fig. 7, is the schematic diagram of heat radiation type semiconductor encapsulation structure the 5th embodiment of the present invention, wherein understands for simplifying accompanying drawing and being convenient to, and the corresponding and same or similar element of previous embodiment is with same reference numeral.
The heat radiation type semiconductor encapsulation structure and the previous embodiment of present embodiment are roughly the same, and main difference is that the par 351 of this heat sink 35 can expose outside packing colloid 34, with the effect of effective lifting heat loss.
The 6th embodiment
Other sees also Fig. 8 and Fig. 9, is the schematic diagram of heat radiation type semiconductor encapsulation structure the 6th embodiment of the present invention, wherein understands for simplifying accompanying drawing and being convenient to, and the corresponding and same or similar element of previous embodiment is with same reference numeral.
The heat radiation type semiconductor encapsulation structure and the previous embodiment of present embodiment are roughly the same, main difference is that the par 351 of this heat sink 35 is formed with can be for the location division that is positioned on the encapsulation unit 33, for example be formed with the kink 353 (as shown in Figure 8) of at least one downward bending at these 351 edges, par, or in this par 351 one-tenth one grooves 354 (as shown in Figure 9), connect when placing this encapsulation unit 33 by heat-conducting glue 36 for the par 351 of this heat sink 35, utilized buckling parts simultaneously and buckle and being positioned on this encapsulation unit 33, avoided the displacement of heat sink 35.
Therefore, heat radiation type semiconductor encapsulation structure of the present invention and method for making thereof, be on chip bearing member, to connect the encapsulation unit of putting and electrically connecting semiconductor chip at least and finish encapsulation, and a heat sink with par connect by its par place this encapsulation unit end face, on this chip bearing member, form again and coat this encapsulation unit, the packing colloid of semiconductor chip and heat sink, thereby by connecing the par of putting a heat sink on the encapsulation unit end face in structure is loaded on encapsulating structure, and this par area is of a size of greatly than the encapsulation unit end face, to promote the effect of encapsulation unit heat radiation, this encapsulation unit end face directly with its packing colloid that coats encapsulating structure is not wherein contacted, avoid taking place to each other delamination, thermal resistance increases and encapsulating structure rhegma problem; Moreover, this heat sink also is provided with the support portion of extending from this par downwards, this support portion can connect by a viscose and place on this chip bearing member, this support portion also can connect on the grounding parts (ground) that places this chip bearing member by a conducting resinl in addition, to provide encapsulating structure one electromagnetic interference (EMI) screening effect, also or this support portion can connect by a nonconducting heat-conducting glue and place on the semiconductor chip, heat for direct loss semiconductor chip, or this heat sink can be formed with a plurality of support portions, for connecing the grounding parts that places semiconductor chip and chip bearing member simultaneously, using provides the encapsulating structure electromagnetic interference (EMI) to cover and the direct effect of loss semiconductor chip heat simultaneously.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention, and any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be foundation with the scope of claims.
Claims (18)
1. the method for making of a heat radiation type semiconductor encapsulation structure comprises:
One chip bearing member is provided, puts and electrically connect semiconductor chip and at least one encapsulation unit of finishing encapsulation at least on this chip bearing member, to connect;
One heat sink with a par is provided, places this encapsulation unit end face so that the heat sink par connect; And
Encapsulate molding operation, on this chip bearing member, to form the packing colloid that coats this encapsulation unit, semiconductor chip and heat sink, wherein the area of this heat sink par is greater than this encapsulation unit top surface area, so that this encapsulation unit is covered by this heat sink par.
2. the method for making of heat radiation type semiconductor encapsulation structure according to claim 1, wherein, this fin also includes the support portion of extending from this par downwards, is located in the formed accommodation space in this fin par and support portion for this encapsulation unit and semiconductor chip.
3. the method for making of heat radiation type semiconductor encapsulation structure according to claim 2, wherein, the par of this heat sink is a heat-conducting glue and connect and place this encapsulation unit end face at interval, and this support portion connects by a viscose and places on this chip bearing member.
4. the method for making of heat radiation type semiconductor encapsulation structure according to claim 2, wherein, the support portion of this heat sink connects the grounding parts that places this chip bearing member by a conducting resinl.
5. the method for making of heat radiation type semiconductor encapsulation structure according to claim 2, wherein, the support portion of this heat sink connects by a nonconducting heat-conducting glue and places on the semiconductor chip.
6. the method for making of heat radiation type semiconductor encapsulation structure according to claim 2, wherein, this heat sink is formed with a plurality of support portions, for connecing the grounding parts that places semiconductor chip and chip bearing member simultaneously.
7. the method for making of heat radiation type semiconductor encapsulation structure according to claim 1, wherein, the par of this heat sink exposes outside packing colloid.
8. the method for making of heat radiation type semiconductor encapsulation structure according to claim 1, wherein, the par of this heat sink is formed with can be for the location division that is positioned on the encapsulation unit.
9. the method for making of heat radiation type semiconductor encapsulation structure according to claim 8, wherein, this location division is for the kink of this par downward bending that the edge forms or be located at wherein one of groove in this par.
10. heat radiation type semiconductor encapsulation structure comprises:
One chip bearing member;
At least one semiconductor chip connects and puts and be electrically connected to this chip bearing member;
At least one encapsulation unit connects and puts and be electrically connected to this chip bearing member;
One heat sink has a par, places this encapsulation unit end face so that the heat sink par connect, and wherein the area of this par uses covering this encapsulation unit greater than this encapsulation unit top surface area; And
One packing colloid is formed on this chip bearing member, to coat this semiconductor chip, encapsulation unit and heat sink.
11. heat radiation type semiconductor encapsulation structure according to claim 10, wherein, this fin includes the support portion of extending from this par again downwards, is located in the formed accommodation space in this fin par and support portion for this encapsulation unit and semiconductor chip.
12. heat radiation type semiconductor encapsulation structure according to claim 11, wherein, the par of this heat sink is a heat-conducting glue and connect and place this encapsulation unit end face at interval, and this support portion connects by a viscose and places on this chip bearing member.
13. heat radiation type semiconductor encapsulation structure according to claim 11, wherein, the support portion of this heat sink connects the grounding parts that places this chip bearing member by a conducting resinl.
14. heat radiation type semiconductor encapsulation structure according to claim 11, wherein, the support portion of this heat sink connects by a nonconducting heat-conducting glue and places on the semiconductor chip.
15. heat radiation type semiconductor encapsulation structure according to claim 11, wherein, this heat sink is formed with a plurality of support portions, for connecing the grounding parts that places semiconductor chip and chip bearing member simultaneously.
16. heat radiation type semiconductor encapsulation structure according to claim 10, wherein, the par of this heat sink exposes outside packing colloid.
17. heat radiation type semiconductor encapsulation structure according to claim 10, wherein, the par of this heat sink is formed with can be for the location division that is positioned on the encapsulation unit.
18. heat radiation type semiconductor encapsulation structure according to claim 17, wherein, this location division is for the kink of this par downward bending that the edge forms or be located at wherein one of groove in this par.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101074337A CN101303983A (en) | 2007-05-11 | 2007-05-11 | Heat radiation type semiconductor encapsulation structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101074337A CN101303983A (en) | 2007-05-11 | 2007-05-11 | Heat radiation type semiconductor encapsulation structure and manufacturing method thereof |
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| CN101303983A true CN101303983A (en) | 2008-11-12 |
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| CNA2007101074337A Pending CN101303983A (en) | 2007-05-11 | 2007-05-11 | Heat radiation type semiconductor encapsulation structure and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011071780A1 (en) | 2009-12-10 | 2011-06-16 | Semtech Corporation | Chip assembly with chip-scale packaging |
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2007
- 2007-05-11 CN CNA2007101074337A patent/CN101303983A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011071780A1 (en) | 2009-12-10 | 2011-06-16 | Semtech Corporation | Chip assembly with chip-scale packaging |
| EP2510544A1 (en) * | 2009-12-10 | 2012-10-17 | Semtech Corporation | Chip assembly with chip-scale packaging |
| EP2510544A4 (en) * | 2009-12-10 | 2014-01-22 | Semtech Corp | Chip assembly with chip-scale packaging |
| US8703540B2 (en) | 2009-12-10 | 2014-04-22 | Semtech Corporation | Chip-scale semiconductor die packaging method |
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