CN101299510A - Semiconductor pump short cavity high power laser - Google Patents
Semiconductor pump short cavity high power laser Download PDFInfo
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- CN101299510A CN101299510A CNA200810071280XA CN200810071280A CN101299510A CN 101299510 A CN101299510 A CN 101299510A CN A200810071280X A CNA200810071280X A CN A200810071280XA CN 200810071280 A CN200810071280 A CN 200810071280A CN 101299510 A CN101299510 A CN 101299510A
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Abstract
The invention relates to laser, particularly relates to a laser with the short cavity structure of the semiconductor pump and high power output. The semiconductor pump short cavity high power laser of the invention includes a semiconductor pump laser, a coupling optical system and a laser gain dielectric slab, wherein the coupling optical system adopts a plane-plane cavity or a plano-concave short cavity structure, to cause the pumping ligh to converge into the filamentary pumping point, and the pumping laser laser gain medium. The invention enlarges the short cavity laser gain excited volume and increase the laser oscillation volume through the filamentary pumping point, thereby obtaining the high power output. The invention solves the technical problems of difficult pumping under the high power because of the crystal thermal effect.
Description
Technical field
The present invention relates to a kind of laser, relate in particular to a kind of laser about semiconductor pumped short bore configurations and high power output.
Background technology
In semiconductor pumped short cavity laser, common structure such as Fig. 1,101 is semiconductor pump laser, 102 is coupled lens, and 103 is the microchip intracavity frequency doubling laser, and the coupling optical system of this laser adopts end pumping or globe lens to assemble, pumping point many at tens microns between the 200 μ m, because crystal thermal effect, pump power are difficult in pumping under the high power, be unfavorable for producing high power output.
Summary of the invention
For solving the defective of conventional semiconductor pumped short cavity laser, this adopts average chamber or flat-concave cavity short bore configurations, make pump light with linear light spot form pumping laser gain media, thereby form the short cavity laser or the micro-slice laser of high power output first-harmonic or frequency doubled light output.
The present invention adopts following technical scheme:
Semiconductor pump short cavity high power laser of the present invention comprises semiconductor pump laser, coupling optical system, gain medium sheet.Wherein: described coupling optical system adopts average chamber or flat-concave cavity short bore configurations, makes pump light be converged to wire pumping point, pumping laser gain media.The present invention enlarges short cavity gain medium excited volume and increases the laser generation volume by wire pumping point, thereby obtains high power output.
Further, described average chamber or flat-concave cavity structure adopt cylindrical lens or similar cylindrical lens optical system as the pump optical coupled system, make pump light be the wire rectangle or approximate rectangularly come the pumping laser gain media.
Further, regulate whole globe lens or GRIN Lens or non-spherical lens object point and picture point ratio in the described coupling optical system, make pump light be converged to wire pumping point.
Further, described gain medium sheet can adopt the monolithic gain medium, also must be with gain medium is not mixed composite sheet with gain medium sheet gummed to improve the heat-sinking capability of gain media by the in-depth optical cement with two.
Further, described short bore configurations can adopt discrete cavity configuration also can adopt the microchip structure, and adopting each optical element of micro sheet structure is single integral body by optical cement or in-depth optical cement.
Further, described semiconductor pump laser can be single-chip formula high-power semiconductor laser or multiple chips array semiconductor pump laser.
Further, described laser can also add frequency-doubling crystal and constitute the frequency doubled light output laser with producing first-harmonic output.Perhaps can add passive Q-adjusted crystal and constitute accent Q high power output laser.
The present invention adopts technique scheme, adopts average chamber or flat-concave cavity short bore configurations, makes pump light with linear light spot form pumping laser gain media, has solved because of crystal thermal effect, and pump power is difficult in the technical problem of pumping under the high power.
Description of drawings
The structure chart of the semiconductor pump short cavity laser of Fig. 1 routine;
Fig. 2 a average chamber short bore configurations figure of the present invention;
Fig. 2 b flat-concave cavity short bore configurations of the present invention figure;
The composite gain dieelctric sheet structure chart of Fig. 3 a average chamber of the present invention short cavity;
The composite gain dieelctric sheet structure chart of Fig. 3 b flat-concave cavity short cavity of the present invention;
Fig. 3 c microchip composite gain dieelctric sheet structure chart;
Fig. 3 d microchip composite gain dieelctric sheet doping content progressively increases schematic diagram.
Embodiment
The present invention is further described for existing accompanying drawings.
Because conventional semiconductor pumped short cavity laser adopts end pumping or globe lens to assemble, more than the pumping point tens microns between the 200 μ m because crystal thermal effect, pump power is difficult in pumping under the high power.So the present invention adopts average chamber or flat-concave cavity short bore configurations, makes pump light with linear light spot form pumping laser gain media, thereby form short cavity laser or the micro-slice laser that high power is exported first-harmonic or frequency doubled light output.
Shown in Fig. 2 a and Fig. 2 b, 201 is a high power output semiconductor pump laser, and 202 is that collimating lens becomes approximate directional light with the LD optical alignment, and 203 is cylindrical lens, with the semiconductor pumped wire pumping point that is converged to again, 204 for there being the micro-slice laser of gain medium.Semiconductor pump short cavity high power laser of the present invention comprises semiconductor pump laser (201), coupling optical system (202,203), gain medium sheet.Wherein: described coupling optical system (202,203) adopts average chamber or flat-concave cavity short bore configurations, makes pump light be converged to wire pumping point, pumping laser gain media.The present invention enlarges short cavity gain medium excited volume and increases the laser generation volume by wire pumping point, thereby obtains high power output.
Further, described average chamber or flat-concave cavity structure adopt cylindrical lens or similar cylindrical lens optical system as the pump optical coupled system, make pump light be the wire rectangle or approximate rectangularly come the pumping laser gain media.
Further, regulate whole globe lens or GRIN Lens or non-spherical lens object point and picture point ratio in the described coupling optical system, elongate the pumping point.Because the pumping point is wire rectangle or approximate rectangular, so increase greatly in the gain medium excitation volume, thereby can intracavity power density do not increase or appropriate state under can improve pump power largely, micro-slice laser can dispel the heat down than large working area is long-pending simultaneously, thereby realizes higher-wattage output.
Further, described gain medium sheet can adopt the monolithic gain medium, also must be with gain medium is not mixed composite sheet with gain medium sheet gummed to improve the heat-sinking capability of gain media by the in-depth optical cement with two.
As Fig. 3 a and Fig. 3 b, 301 is an array laser, 302,303 collimate and assemble cylindrical lens respectively, 304 is the ante-chamber sheet, 308 is that back cavity is frequency-doubling crystal simultaneously, and 305,307 are respectively the matrix that does not have doping identical with gain medium, 306 is gain medium, matrix (305,307) of mixing identical and gain medium (306) with gain medium by the composite gain medium that bonds together of in-depth optical cement to increase the heat-sinking capability of gain medium.Because thereby the present invention adopts the wire pump light unit of making pumping area pump power can reach suitable degree, make total pump power reach level simultaneously, thereby be implemented in higher-wattage output under the short cavity state.
Fig. 3 a, among Fig. 3 b, chamber sheet is made by spacer block (309A, 309B) before and after it, but also adopts optical cement and in-depth optical cement to be made into microplate among the image pattern 3c.
Further, described short bore configurations can adopt discrete cavity configuration also can adopt the microchip structure, and adopting each optical element of micro sheet structure is single integral body by optical cement or in-depth optical cement.
Gain medium among Fig. 3 c (306) also is composited by the in-depth optical cement by the variable concentrations gain media, sees Fig. 3 d, 306A, and 306B, 306C, the 306D doping content progressively increases.
Further, described semiconductor pump laser can be single-chip formula high-power semiconductor laser or multiple chips array semiconductor pump laser.
Further, described laser can also add wave plate, frequency-doubling crystal formation frequency doubled light output laser at high-power microchip with producing first-harmonic output.Perhaps can add passive Q-adjusted crystal and constitute accent Q high power output laser.
Claims (8)
1, a kind of semiconductor pump short cavity high power laser, comprise semiconductor pump laser, coupling optical system, gain medium sheet, it is characterized in that: described coupling optical system adopts average chamber or flat-concave cavity short bore configurations, make pump light be converged to wire pumping point, pumping laser gain media.
2, semiconductor pump short cavity high power laser as claimed in claim 1 is characterized in that: described average chamber or flat-concave cavity structure adopt cylindrical lens or similar cylindrical lens optical system as the pump optical coupled system.
3, semiconductor pump short cavity high power laser as claimed in claim 1 is characterized in that: regulate whole globe lens or GRIN Lens or non-spherical lens object point and picture point ratio in the described coupling optical system, make pump light be converged to wire pumping point.
4, semiconductor pump short cavity high power laser as claimed in claim 1, it is characterized in that: described gain medium sheet can adopt the monolithic gain medium, also must be with gain medium is not mixed the composite sheet of gluing together with the gain medium sheet by the in-depth optical cement with two.
5, as the arbitrary described semiconductor pump short cavity high power laser of claim 1-3, it is characterized in that: described short bore configurations can adopt discrete cavity configuration also can adopt the microchip structure, and adopting each optical element of micro sheet structure is single integral body by optical cement or in-depth optical cement.
6, semiconductor pump short cavity high power laser as claimed in claim 1 is characterized in that: described semiconductor pump laser can be single-chip formula high-power semiconductor laser or multiple chips array semiconductor pump laser.
7, as the arbitrary described semiconductor pump short cavity high power laser of claim 1-6, it is characterized in that: described laser can also add frequency-doubling crystal and constitute the frequency doubled light output laser with producing first-harmonic output.
8, as the arbitrary described semiconductor pump short cavity high power laser of claim 1-6, it is characterized in that: described laser can add passive Q-adjusted crystal and constitute accent Q high power output laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810071280XA CN101299510A (en) | 2008-06-20 | 2008-06-20 | Semiconductor pump short cavity high power laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810071280XA CN101299510A (en) | 2008-06-20 | 2008-06-20 | Semiconductor pump short cavity high power laser |
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| CN101299510A true CN101299510A (en) | 2008-11-05 |
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| CNA200810071280XA Pending CN101299510A (en) | 2008-06-20 | 2008-06-20 | Semiconductor pump short cavity high power laser |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409950A (en) * | 2014-11-14 | 2015-03-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-power sub-hundred picosecond pulse laser system |
| CN104521078A (en) * | 2012-07-27 | 2015-04-15 | 统雷有限公司 | Amplified widely tunable short cavity laser |
| CN107528202A (en) * | 2017-08-24 | 2017-12-29 | 昆山纳光光电有限公司 | A kind of micro-slice laser |
| WO2024040638A1 (en) * | 2022-08-22 | 2024-02-29 | 高新 | Solid-state laser |
-
2008
- 2008-06-20 CN CNA200810071280XA patent/CN101299510A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104521078A (en) * | 2012-07-27 | 2015-04-15 | 统雷有限公司 | Amplified widely tunable short cavity laser |
| CN104409950A (en) * | 2014-11-14 | 2015-03-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-power sub-hundred picosecond pulse laser system |
| CN107528202A (en) * | 2017-08-24 | 2017-12-29 | 昆山纳光光电有限公司 | A kind of micro-slice laser |
| WO2024040638A1 (en) * | 2022-08-22 | 2024-02-29 | 高新 | Solid-state laser |
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Open date: 20081105 |