CN201490566U - High power microchip laser structure - Google Patents
High power microchip laser structure Download PDFInfo
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- CN201490566U CN201490566U CN2009201826244U CN200920182624U CN201490566U CN 201490566 U CN201490566 U CN 201490566U CN 2009201826244 U CN2009201826244 U CN 2009201826244U CN 200920182624 U CN200920182624 U CN 200920182624U CN 201490566 U CN201490566 U CN 201490566U
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- micro
- slice laser
- laser
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Abstract
The utility model relates to the laser field, in particular to a high power applied microchip laser. The high power microchip laser structure of the utility model comprises a laser pump source, which is collimated and coupled to a lighting end face of the microchip laser by an optical collimating and coupling element, wherein the microchip laser is a plurality of crystal plates which are scuffed to be one body, the crystal plate is the thin piece structure, a non-lighting end face of the microchip laser can be plated with a low refractive index film layer or is not plated with films, and is contacted with high thermal conduction materials. The utility model uses the technical scheme, a small volume microchip laser of a high power pump is realized through a simple and reasonable structure.
Description
Technical field
The utility model relates to field of lasers, relates in particular to the micro-slice laser of high power applications.
Background technology
High power solid state laser is one of main direction of laser technology development.In the high power solid state laser system, the thermal effect of medium is the primary key issue that solves.Because the thermal effect of medium not only can cause thermal lens, thermal stress, limit laser power further improves, and laser beam quality is descended, even can cause laser medium to damage.Adopt various laser cavity structures and pump mode to weaken its influence both at home and abroad, but all had various deficiencies.
The utility model content
Therefore, the utility model proposes a kind of structure more the high-power micro-slice laser structure of advantages of simple realize.The technical solution of the utility model is:
High-power micro-slice laser structure of the present utility model comprises laser pumping source, and it passes through the logical light end face that optical alignment coupling element collimates and is coupled to micro-slice laser.Wherein, described micro-slice laser is that gummed is a plurality of crystal wafers of one, and described crystal wafer is a flake structure, and the non-logical light end face of described micro-slice laser can plate low-index film or plated film not, and contacts with the highly heat-conductive material body.
Further, the non-logical light end face of the upper and lower layer of described micro-slice laser plates low-index film, and contacts with the highly heat-conductive material body.Perhaps, the non-logical light end face of upper and lower, the forward and backward layer of described micro-slice laser plates refractivity film layer, and contacts with the highly heat-conductive material body.
Further, a plurality of crystal wafers of described micro-slice laser comprise a gain medium sheet at least.
Further, a plurality of crystal wafers of described micro-slice laser also comprise unadulterated gain medium homogeneity sheet, are glued at the logical light end face in front and back of described gain medium sheet.
Further again, described micro-slice laser also comprises the frequency-doubling crystal sheet.Perhaps, described micro-slice laser also comprises the adjusting Q crystal sheet.
Further, described highly heat-conductive material body is a block structure, is arranged at the non-logical light end face outside of described micro-slice laser.Perhaps, described highly heat-conductive material body is a hollow tubular structure, is arranged at the non-logical light end face front and back side of described micro-slice laser, and sealing, logical cooling liquid or refrigerating gas in the pipeline.
Further, described laser pumping source is high power LD or LD array, and described optical alignment coupling element is fiber optic collimator rod or optical lens coupled system, and described highly heat-conductive material body is the heat conduction silicon chip.
The utility model adopts as above technical scheme, has realized the small size micro-slice laser of high power pumping by a kind of structure of advantages of simple.
Description of drawings
Fig. 1 (a) is the structural representation of embodiment 1 of the present utility model;
Fig. 1 ' is the schematic diagram of micro-slice laser of the present utility model (a);
Fig. 1 (b) is the structural representation of embodiment 2 of the present utility model;
Fig. 1 (c) is the structural representation of embodiment 3 of the present utility model;
Fig. 2 (a) is the structural representation of the embodiment 1 of micro-slice laser of the present utility model;
Fig. 2 (b) is the structural representation of the embodiment 2 of micro-slice laser of the present utility model;
Fig. 2 (c) is the structural representation of the embodiment 3 of micro-slice laser of the present utility model.
Embodiment
Now with embodiment the utility model is further specified in conjunction with the accompanying drawings.
The utility model adopts the optics processing method that micro-slice laser is processed into the thickness superthin structure; plate in the side or glue together the lower protective layer of refractive index; and adopt highly heat-conductive material that thin-sheet laser is surrounded or place mobile cooling liquid or gas fast and effeciently the heat heat conduction that is produced being walked thin-sheet laser, thereby it can be worked under high pumping power.
Embodiment 1:
Consult Fig. 1 (a) and Fig. 1 ' (a) shown in, wherein 101 is ultra-thin gain medium microplate, 102A is identical with gain medium microplate 101 materials but the optical substrate of the active ions that do not mix with 102B, micro-slice laser 10 is exactly to be formed by optical substrate 102A, gain medium microplate 101, optical substrate 102B gummed, S1, S2 are the chamber rete of the logical light face of laser, 103 is fiber optic collimator rod or other optical coupling system, 104 is the pumping source of high power LD or LD array, and 105A, 105B are for having the high thermal conductivity coefficient material bodies.Wherein, d represents the microplate thickness of the utility model micro-slice laser.Two sides or four sides of micro-slice laser 10 non-logical light are the optical polish face.This moment as with two of micro-slice laser 10 or four non-logical light side polishings and plate refractive index than its low protective film; plate refractive index than its low protective film as levels S3, S4; then will form similar waveguiding structure at micro-slice laser 10; the LD light of pumping source 104 and oscillation light will be limited in the ultra-thin gain medium microplate 101, thereby obtain high intracavity power density.As not plating the low-refraction protective layer, then be ordinary construction.
Principle of the present utility model is: the quick shaft direction of the pump light in high power LD or LD array pumping source 104 adopts optical fibre rod or other optical systems collimation for rectangular 103, and pumping ultra-thin gain medium microplate 101 of the present utility model; Micro-slice laser 10 makes its thickness d reach designed waveguide sheet thickness or the required minimum thickness of common resonant cavity by the side polishing; The material of optical substrate 102A, 102B is identical with gain medium microplate 101, helps gain medium microplate 101 end-face heat sinkings.High thermal conductivity coefficient material bodies 105A, 105B closely contact with micro-slice laser 10, thereby can will produce heat in the micro-slice laser 10 in time, effectively lead away; Because the d value is very little, as about 100 μ m, the approximate waveguide state that is, pump light wire pumping simultaneously makes micro-slice laser 10 that very big heat radiation cross section be arranged, thereby can realize high power pump and laser generation.
As micro-slice laser 10 is not the waveguide cavity structure, can adopt both sides polishing mode cancellation because the affected layer that the optics cutting produces, and can make crystal thickness be reduced to theoretical permissible value, and be delivered to heat-conducting layer thereby make crystal pumping center produce heat with the shortest vertical range, thus but efficiently radiates heat.As adopt laser crystal Nd:YVO4 commonly used, and its conductive coefficient is 5W/m/K, then more little helping more of thickness d dispels the heat.
Embodiment 2:
Consult shown in Fig. 1 (b), described highly heat- conductive material body 105A, 105B are hollow tubular structure, are arranged at the non-logical light end face front and back side of described micro-slice laser 10, and sealing.In pipe, feed cooling liquid or 107 pairs of sheet type micro-slice lasers of gas 10 of flowing and carry out the side cooling.Other and described embodiment 1 structural similarity of Fig. 1 (a) repeat no more.
Embodiment 3:
Consult shown in Fig. 1 (c), plate the lower protective film of refractive index around the micro-slice laser 10 and form the microchip waveguiding structure, pump light and oscillation light form high power density and obtain higher gain in the vibration chamber.Link to each other with highly heat-conductive material around the microplate simultaneously, so that its quick heat radiating.Other and described embodiment 1 structural similarity of Fig. 1 (a) repeat no more.
Micro-slice laser of the present utility model can produce fundamental wave output, also can produce various ways laser outputs such as pulse, frequency multiplication, OPO, and various materials constitute THIN COMPOSITE chip structure by the in-depth optical cement.For example:
Consult shown in Fig. 2 (a), wherein, 201 is frequency-doubling crystal, as ktp crystal; 202 is gain medium, and as the Nd:YVO4 crystal, to be material identical with gain medium 202 but the optical substrate of the active ions that do not mix for 202A, 202B, as YVO4 crystal etc.Each optical element is become one by optical cement or in-depth optical cement mode.At the rear end face S2 of frequency-doubling crystal 201 front end face S1 and optical substrate 202B plating laser cavity film, at the side of micro-slice laser 10 S3, S4 plating low-index film or gummed highly heat-conductive material, as silicon chip etc.
Consult shown in Fig. 2 (b), 301 is gain medium, and 302 is passive Q-adjusted crystal, and to be material identical with gain medium 301 but the optical substrate of the active ions that do not mix for 303A, 301B.Each optical element is become one by optical cement or in-depth optical cement mode.At the rear end face S2 of optical substrate 301A front end face S2 and optical substrate 301B plating laser cavity film, at the side of micro-slice laser 10 S3, S4 plating low-index film or gummed highly heat-conductive material, as silicon chip etc.
Consult shown in Fig. 2 (c), its structure similar to shown in Fig. 2 (b) is just at the rear end face S6 of gain medium 301 front end face S5 and passive Q-adjusted crystal 3 02 plating laser cavity rete.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present utility model that do not break away from appended claims and limited; can make various variations to the utility model in the form and details, be protection range of the present utility model.
Claims (10)
1. high-power micro-slice laser structure, comprise laser pumping source, it passes through the logical light end face that optical alignment coupling element collimates and is coupled to micro-slice laser, it is characterized in that: described micro-slice laser is that gummed is a plurality of crystal wafers of one, described crystal wafer is a flake structure, and contacts with the highly heat-conductive material body.
2. micro-slice laser structure according to claim 1 is characterized in that: the non-logical light end face of described micro-slice laser plates low-index film in addition.
3. micro-slice laser structure according to claim 1 is characterized in that: the non-logical light end face of the upper and lower layer of described micro-slice laser plates refractivity film layer, and contacts with the highly heat-conductive material body; Perhaps, the non-logical light end face of upper and lower, the forward and backward layer of described micro-slice laser plates low-index film, and contacts with the highly heat-conductive material body.
4. micro-slice laser structure according to claim 1 is characterized in that: a plurality of crystal wafers of described micro-slice laser comprise a gain medium sheet at least.
5. micro-slice laser structure according to claim 4 is characterized in that: a plurality of crystal wafers of described micro-slice laser also comprise unadulterated gain medium homogeneity sheet, are glued at the logical light end face in front and back of described gain medium sheet.
6. micro-slice laser structure according to claim 5 is characterized in that: described micro-slice laser also comprises the frequency-doubling crystal sheet.
7. micro-slice laser structure according to claim 5 is characterized in that: described micro-slice laser also comprises the adjusting Q crystal sheet.
8. according to claim 1 or 3 described micro-slice laser structures, it is characterized in that: described highly heat-conductive material body is a block structure, is arranged at the non-logical light end face outside of described micro-slice laser.
9. according to claim 1 or 3 described micro-slice laser structures, it is characterized in that: described highly heat-conductive material body is a hollow tubular structure, be arranged at the non-logical light end face front and back side of described micro-slice laser, and sealing, feed cooling liquid or refrigerating gas in the pipeline.
10. micro-slice laser structure according to claim 1, it is characterized in that: described laser pumping source is high power LD or LD array, described optical alignment coupling element is fiber optic collimator rod or optical lens coupled system, and described highly heat-conductive material body is the heat conduction silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201826244U CN201490566U (en) | 2009-08-17 | 2009-08-17 | High power microchip laser structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201826244U CN201490566U (en) | 2009-08-17 | 2009-08-17 | High power microchip laser structure |
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| Publication Number | Publication Date |
|---|---|
| CN201490566U true CN201490566U (en) | 2010-05-26 |
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| CN2009201826244U Expired - Fee Related CN201490566U (en) | 2009-08-17 | 2009-08-17 | High power microchip laser structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299467A (en) * | 2011-07-22 | 2011-12-28 | 山东大学 | Laser crystal structure of intracavitary frequency multiplication laser |
| CN104103999A (en) * | 2014-07-24 | 2014-10-15 | 福建福晶科技股份有限公司 | Optical fiber coupling microchip laser |
| CN112821175A (en) * | 2020-12-22 | 2021-05-18 | 西南技术物理研究所 | Micro-slab erbium glass laser for sniper crosswind speed measurement |
-
2009
- 2009-08-17 CN CN2009201826244U patent/CN201490566U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299467A (en) * | 2011-07-22 | 2011-12-28 | 山东大学 | Laser crystal structure of intracavitary frequency multiplication laser |
| CN104103999A (en) * | 2014-07-24 | 2014-10-15 | 福建福晶科技股份有限公司 | Optical fiber coupling microchip laser |
| CN112821175A (en) * | 2020-12-22 | 2021-05-18 | 西南技术物理研究所 | Micro-slab erbium glass laser for sniper crosswind speed measurement |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20120817 |