CN101295740B - 叠层结构和具有该叠层结构的光伏器件 - Google Patents
叠层结构和具有该叠层结构的光伏器件 Download PDFInfo
- Publication number
- CN101295740B CN101295740B CN2008100899888A CN200810089988A CN101295740B CN 101295740 B CN101295740 B CN 101295740B CN 2008100899888 A CN2008100899888 A CN 2008100899888A CN 200810089988 A CN200810089988 A CN 200810089988A CN 101295740 B CN101295740 B CN 101295740B
- Authority
- CN
- China
- Prior art keywords
- layer
- reflector layer
- laminated construction
- nanometers
- separator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 68
- 238000010276 construction Methods 0.000 claims description 34
- 239000011787 zinc oxide Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract 4
- 239000010408 film Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100899888A CN101295740B (zh) | 2008-04-15 | 2008-04-15 | 叠层结构和具有该叠层结构的光伏器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100899888A CN101295740B (zh) | 2008-04-15 | 2008-04-15 | 叠层结构和具有该叠层结构的光伏器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101295740A CN101295740A (zh) | 2008-10-29 |
CN101295740B true CN101295740B (zh) | 2010-08-25 |
Family
ID=40065875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100899888A Expired - Fee Related CN101295740B (zh) | 2008-04-15 | 2008-04-15 | 叠层结构和具有该叠层结构的光伏器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101295740B (zh) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
-
2008
- 2008-04-15 CN CN2008100899888A patent/CN101295740B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
Also Published As
Publication number | Publication date |
---|---|
CN101295740A (zh) | 2008-10-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN204538042U (zh) | 一种双面太阳能电池组件 | |
CN207409506U (zh) | 一种双面发电的带本征薄层异质结电池 | |
CN103022160B (zh) | 能抗pid效应的太阳电池钝化减反膜 | |
CN101789458A (zh) | 变带隙双面透明电极薄膜太阳能电池 | |
CN201532957U (zh) | 一种硅基薄膜太阳能电池组件 | |
CN106847941B (zh) | 一种碲化镉薄膜太阳能电池及其制备方法 | |
CN204809236U (zh) | 高效率光伏组件 | |
CN101924152A (zh) | 一种薄膜太阳能电池及其制作方法 | |
CN201708163U (zh) | 薄膜太阳电池膜系和薄膜太阳电池 | |
CN206460967U (zh) | 一种碲化镉薄膜太阳能电池 | |
CN101295740B (zh) | 叠层结构和具有该叠层结构的光伏器件 | |
CN101866969B (zh) | 太阳电池 | |
CN205881925U (zh) | 一种光学利用率高的光伏组件 | |
CN203351632U (zh) | 一种薄膜硅、晶体硅异质结双面太阳能电池 | |
CN101295741A (zh) | 叠层结构和具有该叠层结构的太阳能电池 | |
CN209249469U (zh) | 一种异质结太阳电池 | |
CN207977320U (zh) | 太阳能电池及光伏建筑一体化光伏组件 | |
CN106876513A (zh) | 一种等离极化激元横向异质集成的太阳电池 | |
CN101719520A (zh) | 透明导电极薄膜太阳能电池 | |
CN201364902Y (zh) | 提高光吸收率的太阳能电池板 | |
CN207651496U (zh) | 一种新型太阳能光伏发电系统 | |
CN102842630A (zh) | 一种单晶硅太阳能电池组件 | |
CN101924153A (zh) | 一种薄膜太阳能电池及其制作方法 | |
CN205881920U (zh) | 一种碲化镉薄膜太阳能电池及其模块 | |
CN203553178U (zh) | 一种增透和能减少pid现象发生的tco玻璃 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: APOLLO PRECISION (BEIJING) LIMITED |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20110809 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Co-patentee after: APOLLO PRECISION (BEIJING) Ltd. Patentee after: GS-SOLAR (FU JIAN) Co.,Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100825 |