CN101284450B - Drop discharge head and method of producing the same - Google Patents

Abstract

The present invention discloses a liquid droplet discharge head, including a channel-forming element, which is made by silicon substrate and provided with pressure chamber and nozzle-communicating channel; and a nozzle board, setting on one side of the channel-forming element and having a nozzle connecting with the pressure chamber through the nozzle-communicating channel; wherein the nozzle-communicating channel is provided with four corners in the internal side of the channel-forming element, and six obtuse angle corners on the outlet of the nozzle board side.

Description

Drop discharge head and manufacture method thereof

The application is that application is artificial: Ricoh Co., Ltd, the applying date is: on December 05th, 2002, application number is: 02816878.X, name is called: the dividing an application of the invention of drop discharge head and manufacture method thereof.

Technical field

Present invention relates in general to manufacture method, print cartridge and the ink-jet printing device of drop discharge head, this drop discharge head.

Background technology

The ink-jet printing device that is used as imaging device in printer, facsimile machine, duplicator, plotter etc. is provided with ink jet-print head as drop discharge head.Ink jet-print head comprises the nozzle that is used to spray ink droplet, the ink groove that is communicated with nozzle liquid (being also referred to as lip chamber, pressure chamber, pressurization ink droplet chamber or black chamber), and the driving mechanism that is used for the ink of pressurized ink groove.Although following explanation relates generally to is ink jet-print head as drop discharge head, and drop discharge head also comprises the head member of the liquid resist that is used to discharge the drop form and is used to discharge the head member of the dna fragmentation of drop form.

Adopt piezoelectric ink jet head, owing to adopt the volume-variation of the ink groove that distortion caused of the barrier film of piezoelectric element to make ink droplet discharge (for example, seeing JP61-51734A).Adopt the ink jet-print head of another type, make ink droplet discharge (for example, seeing JP61-59911A) by adopting the bubble that ink generated in the heat-resistant element heating ink groove.Adopt the ink jet-print head of another type, owing to the volume-variation that generates the caused ink groove of diaphragm deflection that electrostatic force causes between electrode and the barrier film makes ink droplet discharge (for example, seeing JP 61-51734A).

Among the ink jet-print head of these types, piezoelectric ink jet head has superiority especially for colour print, because eliminated because the potentiality (particularly, color inks is easier to degrade owing to being heated) of the ink droplet degraded that heat energy causes.In addition, the control of the deflection that the flexible control of ink droplet quantity can be by piezoelectric vibrator realizes.Thereby piezoelectric ink jet head is suitable for constructing the ink-jet printing device with high-quality colour print capacity.

Talk about in passing, in order to realize the colour print of better quality, the definition of having relatively high expectations.For this reason, (for example, the next door between the pressure chamber) size will reduce piezoelectric vibrator inevitably, requires precision increase when making and assembling these parts with each parts relevant with the ink groove.In this case, in order to make the complex component that has as the microstructure of pressure chamber subtly, proposed the micromachining technology, wherein the anisotropic etching method is applied in the monocrystalline silicon substrate.At this moment, each parts of being made by monocrystal silicon substrate (for example, be arranged between nozzle plate and the barrier film and constitute the separator of pressure chamber) have higher mechanical stiffness than each parts of making by photoresist, thus since the structural strain's degree of the ink jet-print head that the vibration of piezoelectric vibrator causes reduce.In addition, make pressure chamber evenly become possibility, because the wall surface that is etched of pressure chamber is perpendicular to the surface of separator.

JP 7-178908A discloses a kind of printhead that adopts the micromachining technology to make, and wherein the anisotropic etching method is applied in the monocrystalline silicon substrate of crystal orientation (110) to form pressure chamber.The part of contiguous its outlet of pressure chamber is limited by six wall surfaces, that is, from four wall surfaces perpendicular to monocrystalline silicon substrate of monocrystalline silicon substrate viewgraph of cross-section, each wall surface is connected on the adjacent wall surface with the obtuse angle; With two surfaces that are connected to the obtuse angle on concrete one of these four wall surfaces.This conventional art is attempted evenly to avoid bubble to stagnate as quickly as possible by the China ink stream in the zone (that is the opening on the nozzle plate side) that makes the outlet of the incident pressure chamber of contiguous flow stagnation.

JP 7-125198A discloses the printhead that uses the micro-manufactured technology to make, and wherein the part of contiguous its outlet of pressure chamber is limited by five wall surfaces perpendicular to monocrystalline silicon substrate, and each wall surface is connected on the adjacent wall surface with the obtuse angle.In addition, pressure chamber wall surface is made of the extensional surface of a wall of storage ink groove.This conventional art attempt by will store up between ink groove and the pressure chamber level and smooth be communicated with and with pressure chamber's outlet be positioned apart from pressure chamber's wall surface almost the bubble eliminated in the adjacent area of the opening on the nozzle plate side of equidistant stagnate.

JP10-264383A discloses a kind of printhead, and it comprises black chamber (pressure chamber), wherein adopts piezoelectric element to make the ink pressurized make it outside discharging.Water imbibition and alkali resistance film (as, nickel oxide and silica) be deposited on the inner surface in black chamber, thus the silicon that makes elution arrive in the ink (particularly under using anion ink situation) is minimum.

JP 11-348282A discloses and has a kind ofly utilized bonding agent first substrate to be fastened on second substrate with nozzle bore and the printhead of making.First substrate has along the depression of black cavity edge and storage ink groove stagger arrangement layout.Can prevent that unnecessary bonding agent from flowing in the ink groove, this is because unnecessary bonding agent has flow in the depression.

But, making by the etch silicon substrate under the situation of separator (being formed with the ink groove in these parts), be difficult to silicon substrate is processed into required structure, this is because etching technics depends on the crystal orientation of silicon substrate.In addition, be etched on the silicon face of pressure chamber and also produced roughness.

Above-mentioned printhead according to prior art can not be reduced to enough degree with the stagnation of bubble and the retentivity of ink.Particularly, pressure chamber has more than four wall surfaces owing to the surface texture in many spaces causes illeffects that ink is flowed, and is difficult to control ink and flows.

In addition, on the pressure chamber's wall surface that sull or titanium nitride membrane (liquid (ink) protecting film) is deposited to separator to prevent that the internal stress of liquid-state protective film causes the distortion (bending) of whole isolated part under the situation of silicon elution in the ink.If miscellaneous part is fixed on the separator, miscellaneous part is the barrier film in nozzle plate, thermal type printhead and the piezoelectric print head for example, and the cover piece that is used to form the ink groove (for example, pressure chamber), can often cause that the fault between these parts and the separator is bonding, thus reliability decrease.

Summary of the invention

The providing drop discharge head, make the method for this drop discharge head and the inkjet-printing device that can discharge ink droplet of catalogue of the present invention with high stability.

The present invention another and the purpose inkjet-printing device that provides drop discharge head, make the method for this drop discharge head and in long-term operation, can operate with high reliability more specifically.

In order to realize these purposes, according to one aspect of the invention, drop discharge head comprises the groove forming element of being made by silicon substrate, wherein is formed with groove in the groove forming element, to nozzle, described groove has the surface that surface roughness Ra is not more than 2 μ m to liquid by this trench flow.

This configuration has improved the reliability of drop discharge head and the reliability of venting performance, because it has prevented that bubble is obstructed in the micro-uneven place of flute surfaces.

In order to realize described purpose, according to a further aspect of the present invention, drop discharge head comprises: the groove forming element, and it is made by silicon substrate and wherein is formed with pressure chamber and nozzle connectivity slot; And nozzle plate, it is arranged on groove forming element one side and has nozzle via nozzle connectivity slot and pressure chamber's fluid connection, wherein the nozzle connectivity slot has four turnings in groove forming element inboard, and nozzle connectivity slot its exit on the nozzle plate side has turning, six obtuse angles.

This configuration has improved the reliability of drop discharge head and the stability of venting performance, because prevented bonding agent in assembling process because in the capillarity flow nozzle connectivity slot, prevent thus because the interior bonding agent of nozzle connectivity slot solidifies the drop trajectory line skew that causes.Difficulty when the control liquid flow has been eliminated in this configuration in addition is because nozzle connectivity slot at the turning of groove forming element inboard no more than four.

Preferably, in groove forming element inside, four sides of nozzle connectivity slot are subjected to being substantially perpendicular to the restriction on four surfaces of nozzle plate, and on the nozzle plate side, four sides of nozzle connectivity slot are subjected to four so vertical surfaces and the restriction of two additional surfaces tilting with respect to nozzle plate.Adopt this configuration, can prevent the bubble of air (or gas) and the flow stagnation of liquid, prevent the venting fault thus by means of inclined surface.

In order to realize described purpose, according to a further aspect of the invention, drop discharge head comprises: groove forms element, and it is made by silicon substrate and has pressure chamber's (barrier film side trench 43), is formed on wherein nozzle connectivity slot and secondary cavity (nozzle side groove 42); Nozzle plate, it is arranged on groove forming element one side, and constitutes together with groove forming element secondary cavity, and has the nozzle via secondary cavity and nozzle connectivity slot and pressure chamber's fluid connection; And barrier film, it is arranged on the opposite side of groove forming element, and constitute pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber, wherein the nozzle connectivity slot has four turnings, and near the nozzle plate side the nozzle, the opening shape of secondary cavity limits by four lines that connect with the obtuse angle.

This configuration has improved the reliability of drop discharge head and the stability of venting performance, because it prevents bonding agent because capillarity flow nozzle connectivity slot prevents the drop trajectory line skew that causes owing to the bonding agent that is contained in the nozzle connectivity slot thus.In addition, the difficulty when the control liquid flow has been eliminated in this configuration is because nozzle connectivity slot at the turning of groove forming element inboard no more than four.

Preferably, in nozzle plate side top nozzle vicinity, three sides of secondary cavity are subjected to being substantially perpendicular to three surfaces of nozzle plate and the additional surface restriction of tilting with respect to nozzle plate.Adopt this configuration, can prevent the stagnation that bubble and fluid flow, prevent the venting fault thus by means of inclined surface.

In order to realize described purpose, according to a further aspect of the present invention, drop discharge head comprises: the groove forming element, it has the groove that is formed on wherein, liquid flow into nozzle by this groove, also have first surface on a side and the second surface on opposite side, wherein get rid of recess outside, the surface area between first surface and the second surface does not have difference basically.

This configuration has improved the reliability of drop discharge head and can reduce production costs, even because also can make deformation extent less than 2 μ m under the anti-liquid film as oxidation film or titanium nitride film is formed on situation on the flute surfaces.

Preferably, the pseudo-groove that shape is similar to groove shape is formed on the first surface side, and pseudo-groove is communicated with the outer side liquid of groove forming element.Adopt this configuration, even also can make the air degrees of expansion minimum in the pseudo-groove when in bonding process, having heat to be applied on the groove forming element.

In order to realize this purpose, according to a further aspect of the invention, drop discharge head comprises: the groove forming element wherein is formed with pressure chamber and nozzle connectivity slot; And nozzle plate, it is arranged on the side of groove forming element and has nozzle with pressure chamber's fluid connection; Wherein the shape pseudo-chamber that is similar to pressure chamber's shape is formed on the nozzle plate side of groove forming element, and the degree of depth of described pressure chamber is more than or equal to 85 μ m.

This configuration has improved the reliability of drop discharge head and the stability of venting performance, even because using the deformation extent and the ample supply ink that also can reduce the groove forming element under the high viscosity liquid situation with the maximum discharge frequency.

Preferably, the silicon substrate thickness between pressure chamber and the pseudo-chamber is more than or equal to 100 μ m.Adopt this configuration, can reduce the deformation extent of groove forming element, and balance drives one and drive drop speeds between the multidigit simultaneously, thus with high accuracy control ink drippage position.

In order to realize described purpose, according to a further aspect of the present invention, print cartridge comprises: according to ink jet-print head of the present invention; With black case, it holds the ink that will supply and becomes one with ink jet-print head.

This configuration has improved the stability and the output of print cartridge, because can operate and with high stability and precision venting with height reliability according to drop discharge head of the present invention.

In order to realize described purpose, according to a further aspect of the present invention, ink-jet printing device comprises: according to ink jet-print head of the present invention; The China ink case, it holds the ink that will be fed to ink jet-print head; Print cartridge, it supports ink jet-print head and can move on main scanning direction; And paper feed mechanism, be used for transmitting paper via print area to paper discharge tray from paper feeding plate.

This configuration has improved the reliability and the print image quality of ink-jet printing device, because can operate and with high stability and precision discharging ink droplet with height reliability according to drop discharge head of the present invention.

In order to realize this purpose, according to a further aspect of the invention, the method for making drop discharge head comprises the steps: to provide silicon substrate; With utilize potassium hydroxide solution in silicon substrate, to form groove by wet etching, wherein the concentration of potassium hydroxide solution is more than or equal to 25%, treatment temperature is more than or equal to 80 ℃, so that described groove has the surface that surface roughness Ra is not more than 2 μ m.

This configuration forms in by silicon substrate manufacturing groove forming element easily has the groove that surface roughness Ra is not more than the surface of 2 μ m.

Preferably, prevent that bubble is attached to the lip-deep technology that is etched and is included in the step that forms groove, this technology is for example shaken (tilting to and fro) silicon substrate and is applied ultrasonic wave to silicon substrate.

Adopt this configuration, can prevent that the hydrogen that produces is attached on the wall surface in etching technics, and can easily form the groove of surface roughness Ra less than 2 μ m.

In order to realize described purpose, according to a further aspect in the invention, the method for making drop discharge head comprises the steps: to provide silicon substrate; And form the groove forming element by silicon substrate, wherein the concentration of potassium hydroxide solution is more than or equal to 25%, treatment temperature is more than or equal to 80 ℃, so that described groove has the surface that surface roughness Ra is not more than 2 μ m, in the step that forms groove, added preventing that bubble is attached to the lip-deep technology that is etched.This groove forming element has the pressure chamber and the nozzle connectivity slot that is used for pressure fluid is directed to nozzle that is used to hold with pressurized liquid, is wherein forming non through hole (inner passage) by the dry etching silicon substrate afterwards by anisotropic etching silicon substrate formation nozzle connectivity slot.Adopt this configuration, can improve the reliability of output and drop discharge head.

Description of drawings

Fig. 1 illustrates the decomposition diagram according to ink jet-print head of the present invention.

Fig. 2 illustrates along the cutaway view of vertical intercepting of the ink jet-print head of Fig. 1.

Fig. 3 illustrates along the cutaway view of the taken transverse of the ink jet-print head critical piece of Fig. 1.

Fig. 4 illustrates the cutaway view of the separator 1 (groove formation element) of first embodiment of ink jet-print head.

Fig. 5 A illustrates the plane of the separator of seeing from nozzle plate 3 directions 1, is used to illustrate the nozzle plate gluing of surfaces of separator 1.

Fig. 5 B illustrates the enlarged detail of nozzle connectivity slot 5.

Fig. 6 A illustrates the plane of the separator of seeing from barrier film 2 directions 1, is used to illustrate the barrier film gluing of surfaces of separator 1.

Fig. 6 B illustrates the enlarged detail of pressure chamber 6.

Fig. 7 illustrates along the amplification view of the line A-A intercepting of Fig. 6 B.

Fig. 8 (a) illustrate separator 1 according to comparative example ' the plane of nozzle plate gluing of surfaces.

Fig. 8 (b) illustrate separator 1 ' nozzle connectivity slot 5 ' enlarged detail.

Fig. 9 (a) illustrate separator 1 according to comparative example ' the plane of barrier film gluing of surfaces.

Fig. 9 (b) illustrate separator 1 ' pressure chamber 6 ' enlarged detail.

Figure 10 illustrates along the cutaway view of the amplification of the line B-B intercepting of Fig. 9 (b).

Figure 11 illustrates the cutaway view according to second embodiment of the separator of ink jet-print head of the present invention.

Figure 12 A to 12E illustrates an example of the technology that is used to make the first embodiment separator 1.

Figure 13 A to 13E illustrates the continuation technology of the technology that is used to make the first embodiment separator 1.

Figure 14 illustrates potassium hydroxide solution concentration and is used for the influence of anisotropic etching temperature to surface characteristics (roughness).

Figure 15 A to 15E illustrates an example of the technology that is used to make the second embodiment separator 41.

It is the example that is used to make the technology of the second embodiment separator 41 that Figure 16 A to 16E continues.

Figure 17 illustrates the test result of the implant operation of the ink jet-print head that is equipped with separator 1.

Figure 18 (A) illustrates the plane according to the nozzle plate gluing of surfaces of the 3rd embodiment separator 11.

Figure 18 (B) illustrates the enlarged detail of nozzle connectivity slot 55.

Figure 19 (A) illustrates the plane of separator 11, is used to illustrate the barrier film gluing of surfaces of separator 11.

Figure 19 (B) illustrates the enlarged detail of pressure chamber 36.

Figure 20 (A) illustrate separator 11 according to comparative example ' the perspective view of part.

Figure 20 (B) illustrates the perspective view according to the part of the separator 11 of third embodiment of the invention.

Figure 21 A to 21E illustrates an example of the technology that is used to make the 3rd embodiment separator 11.

Figure 22 A to 22E continues to illustrate the example of the technology that is used to make the 3rd embodiment separator 11.

Figure 23 illustrates the cutaway view of the separator 441 of the 4th embodiment.

Figure 24 A to 24E illustrates an example of the technology that is used to make the 4th embodiment separator 441.

Figure 25 A to 25E continues to illustrate the example of the technology that is used to make the 4th embodiment separator 441.

Figure 26 illustrates the decomposition diagram according to another kind of ink jet-print head of the present invention.

Figure 27 illustrates the cutaway view that vertically intercepts along the ink jet-print head of Figure 26.

Figure 28 illustrates along the cutaway view of the taken transverse of the ink jet-print head critical piece of Figure 26.

Figure 29 illustrates the cutaway view of separator 331 of the ink jet-print head of Figure 26.

Figure 30 A illustrates the plane of the nozzle plate gluing of surfaces of separator 331.

Figure 30 B illustrates the plane of the barrier film gluing of surfaces of separator 331.

Figure 31 A illustrate separator 331 according to comparative example ' the plane of nozzle gluing of surfaces.

Figure 31 B illustrate separator 331 ' the plane of barrier film gluing of surfaces.

Figure 32 illustrates the test result after the measurement that concerns between the deformation extent of the ratio of barrier film bonding surface area and nozzle plate bonding surface area and separator.

Figure 33 A illustrates the plane of separator 331 nozzle plate gluing of surfaces according to an alternative embodiment.

Figure 33 B illustrates the plane of the barrier film gluing of surfaces of separator 331.

Figure 34 A to 34E illustrates an example of the technology that is used to make the 5th embodiment separator 331.

Figure 35 A to 35E continues to illustrate the example of the technology that is used to make the 5th embodiment separator 331.

Figure 36 A to 36E illustrates another example of the technology that is used to make the 5th embodiment separator 331.

Figure 37 A to 37E continues to illustrate the example of the technology that is used to make the 5th embodiment separator 331.

Figure 38 A to 38D illustrates the another example of the technology that is used to make the 5th embodiment separator 331.

Figure 39 A to 39C continues to illustrate the example of the technology that is used to make the 5th embodiment separator 331.

Figure 40 illustrates the decomposition diagram of ink jet-print head according to an alternative embodiment.

Figure 41 illustrates the cutaway view of the ink jet-print head of Figure 40.

Figure 42 illustrates the perspective view according to the ink jet-print head of another alternative.

Figure 43 illustrates the decomposition diagram of the ink jet-print head of Figure 42.

Figure 44 illustrates from the ink groove and forms the perspective view that groove that side sees forms element.

Figure 45 is illustrated under the situation that drives and drives the assessment result of drop speeds under the situation of multidigit simultaneously.

Figure 46 illustrates the height H 1 of pressure chamber 6 and discharges the assessment result that concerns between the fault rate.

Figure 47 A to 47E illustrates an example of the technology that is used to make the 6th embodiment separator.

Figure 48 A to 48D continues to illustrate an example of the technology that is used to make the 6th embodiment separator.

Figure 49 A to 49D illustrates another example of the technology that is used to make the 6th embodiment separator.

Figure 50 A to 50C continues to illustrate the example of the technology that is used to make the 6th embodiment separator.

Figure 51 A to 51D illustrates another example of the technology that is used to make the 6th embodiment separator.

Figure 52 A to 52C continues to illustrate the example of the technology that is used to make the 6th embodiment separator.

Figure 53 illustrates the perspective view of the all-in-one-piece print cartridge of black case.

Figure 54 illustrates the perspective view of ink-jet printing device.

Figure 55 illustrates the summary side elevation of the mechanical part of ink-jet printing device.

The specific embodiment

Hereinafter, principle of the present invention and embodiment are described with reference to the accompanying drawings.

Fig. 1-4 illustrates first embodiment according to the ink jet-print head as drop discharge head of the present invention.Fig. 1 illustrates the decomposition diagram of ink jet-print head.Fig. 2 illustrates along the cutaway view of vertical intercepting of ink jet-print head.Fig. 3 illustrates along the cutaway view of the taken transverse of ink jet-print head critical piece.Fig. 4 illustrates the cutaway view of the separator (groove formation element) of ink jet-print head.

Ink jet-print head comprises spacer 1, barrier film 2, nozzle plate 3 and the piezoelectric element 12 that monocrystalline silicon substrate is made.Barrier film 2 bonds to the lower surface of separator 1.Nozzle plate 3 bonds to the upper surface of separator 1.Ink droplet is connected to Mo Yuan from its nozzle bore that can discharge (nozzle) 4 via the ink groove, and the ink groove comprises nozzle connectivity slot 5, pressure chamber 6, resistance groove 7 and storage ink groove (public ink chamber) 8.Pressure chamber 6, resistance groove 7 and storage ink groove 8 are between barrier film 2 and separator 1.The surface coverage of storage ink groove 8 that defines pressure chamber 6 surfaces, resistance groove 7 surfaces and the separator 1 of ink flute surfaces has anti-liquid film 10, as oxidation film, titanium nitride film with as the organic resin film of polyamide.

The piezoelectric element 12 of multilayer bonds to the lower surface of barrier film 2, and wherein each piezoelectric element 12 is with respect to a pressure chamber 6 location.The piezoelectric element 12 of multilayer bonds in the substrate 13 of being made by insulating materials, insulating materials such as barium titanate, aluminium oxide and forsterite.Intermediary element 14 (Fig. 1 is not shown) between barrier film 2 and substrate 13 bonds in the substrate 13.Intermediary element 14 is round multirow piezoelectric element 12.

Piezoelectric element 12 can pass through alternately laminated piezoelectric layer 15 (as, the lead zirconate titanate that 10-50 μ m is thick (PZT)) and internal electrode 16 (as, the silver-colored palladium (AgPd) of several micron thickness) and make.Element with motor machine characteristic is not limited to PZT.Each internal electrode 16 is alternately elongated each side, and being electrically connected to public electrode pattern and the single electrode pattern that is formed in the substrate 13, and they are electrically connected to control module via the flexible print circuit (not shown).When certain driving pulse voltage applied via internal electrode 14, piezoelectric element 12 presented the distortion on the stacked direction (that is d33 direction).The distortion of piezoelectric element 12 (displacement) can fully be pressurizeed to the ink in the pressure chamber 6, thereby ink is discharged to outside the nozzle bore 4.What notice is that the pressurization of ink also can utilize the distortion of the piezoelectric element on the d31 direction to realize.The through hole (not shown) is formed in substrate 13, intermediary element 14 and the barrier film 2, and black source (not shown) is directed to storage ink groove 8 to ink from the external world via this through hole.

By adopting alkaline solution (as potassium hydroxide (KOH) solution) that the monocrystalline silicon substrate of crystal orientation (110) is carried out the structure that anisotropic etching forms separator 1, that is to say, corresponding to the recess of pressure chamber 6 and storage ink groove 8, and corresponding to the trench portions of resistance groove 7.Nozzle connectivity slot 5 forms by the combination of dry etching and anisotropic etching.

Barrier film 2 is made by the electroformed nickel metallic plate.Barrier film 2 has the thin-walled portion 21 relevant with pressure chamber 6 that is formed on wherein, thereby helps its distortion.Barrier film 2 also has the thick wall part 22 relevant with piezoelectric element 12 that is formed on wherein, thereby provides bonding surface for piezoelectric element 12.In addition, barrier film 2 has the thick wall part 23 relevant with partition 20 that is formed on wherein, and the upper surface of thick wall part 23 (that is the planar shaped upper surface of barrier film 2) utilizes bonding agent to bond on the separator 1.Supporting part 24 is between thick wall part 23 and substrate 13.Supporting part 24 forms with piezoelectric element 12 by cutting piezoelectric element block, and has the structure identical with piezoelectric element 12.

Nozzle plate 3 has the nozzle bore 4 that is formed on the 10-30 μ m diameter relevant with pressure chamber 6 wherein.Nozzle bore 4 is arranged in two row (for convenience of explanation, Fig. 2 illustrates straight layout) in the interlaced arrangement mode.Nozzle plate 3 by such as the combination of metal, metal and the resin (as polyamide resin) of stainless steel and nickel, silicon, and the combination of these materials make.The nozzle surface of nozzle plate 3 (upper surface among Fig. 3) utilizes known technology such as electroplated film disk coating and waterproof coating to be coated with waterproofing membrane, thereby presents drainage for ink.

Adopt this ink jet-print head, the pulse voltage that applies 20-50V to piezoelectric element 12 causes piezoelectric element 12 to be out of shape (situation of Fig. 3) on stacked direction selectively, causes that thus barrier film 2 is towards pressure chamber's 6 distortion.Then, the ink in the pressure chamber 6 pressurizes according to the volume-variation of pressure chamber 6, to discharge as drops out from nozzles hole 4.

The small negative pressure of pressure chamber 6 inside generates by the ink inertial flow when owing to the ink droplet discharging internal ink pressure being reduced.Under this state, along with piezoelectric element 12 is transformed into passive state (inactivated state), barrier film 2 is returned to its reset condition, and this has increased the size of negative pressure.At this moment, from the ink in black source via in storage ink groove 8 and the resistance groove 7 feed pressure chambers 6 as the liquid obscures part.When the vibration weakening of the ink meniscus of nozzle bore 4 to stable state, the discharging of ensuing ink droplet is carried out by applying pulse voltage to piezoelectric element 12.

With reference to Fig. 4, make surface roughness (Ra) (Ra: the mean value of measured surface roughness) be no more than 2 μ m corresponding to the formation of the wall surface 1b of the wall surface 1a of the recess of separator 1 pressure chamber 6 and nozzle connectivity slot 5.

About the detailed description of this respect, referring to Fig. 5-10, Fig. 5 A illustrates the plane of the separator of seeing from nozzle plate 3 directions 1, is used to illustrate the nozzle plate gluing of surfaces of separator 1; Fig. 5 B illustrates the enlarged detail of nozzle connectivity slot 5.Fig. 6 A illustrates the plane when the separator of seeing from barrier film 2 directions 1, is used to illustrate the barrier film gluing of surfaces of separator 1; Fig. 6 B illustrates the zoomed-in view of pressure chamber 6.Fig. 7 illustrates along the amplification view of the line A-A intercepting of Fig. 6 B.

Fig. 8 (a) illustrate separator 1 according to comparative example ' the plane of nozzle plate gluing of surfaces, Fig. 8 (b) illustrate separator 1 ' nozzle connectivity slot 5 ' enlarged detail.Fig. 9 (a) illustrate separator 1 according to comparative example ' the plane of barrier film gluing of surfaces, Fig. 9 (b) illustrate separator 1 ' pressure chamber 6 ' enlarged detail.Figure 10 illustrates along the amplification view of the line B-B intercepting of Fig. 9 (b).Adopt additional mark to have the same reference numerals of " ' " to describe with part according to the similar comparative example of part of first embodiment of the invention.

Separator 1,1 ' respectively has the recess 31 of the nozzle plate gluing of surfaces that is formed on them, is used to receive the unnecessary bonding agent when separator 1,1 ' bond to nozzle plate 3,3 ' overflow when going up.Separator 1,1 ' also has the recess 32 in the barrier film gluing of surfaces that is formed on them respectively, is used to receive the unnecessary bonding agent when separator 1,1 ' bond to barrier film 2,2 ' overflow when going up.

As shown in these figures, according to the first embodiment of the present invention, the formation of the wall surface 1a of the pressure chamber 6 relative with barrier film 2 makes surface roughness (Ra) be no more than 2 μ m.Special measure on the wall surface realizes this surface characteristics because the hydrogen that etching produces is attached to by taking to be used to prevent.For example, in etching process, shake silicon substrate, make silicon substrate form mechanical oscillation, perhaps apply ultrasonic wave and can prevent that hydrogen is attached on the wall surface to silicon substrate.

Therefore, the surface roughness of the wall surface 1a that above-mentioned and barrier film 2 are relative allows ink smooth flow in pressure chamber 6, and prevents that bubble Ba is obstructed in the micro-uneven part of surperficial 1a, as shown in Figure 7, prevent the fault of ink-jet printer thus, as the venting fault.Therefore, can discharge ink droplet with high stability according to ink-jet printer of the present invention.

On the contrary, according to comparative example, with the surface roughness (Ra) of the 6 ' wall surface 1a ' of pressure chamber of barrier film 2 ' relative greater than 2 μ m.This is because the bubble (hydrogen) that generates during the etch silicon substrate is attached on the wall surface, makes the surface roughness of wall surface 1a ' become possibility less than 2 μ m.

According to comparative example, owing to surpass 2 μ m with the surface roughness of the wall surface 1a ' of barrier film 2 ' relative, ink can not be in pressure chamber 6 ' middle smooth flow, and bubble Ba easily the uneven part on surperficial 1a ' be obstructed, as shown in figure 10.Therefore, the possibility of the fault of ink-jet printer such as venting fault becomes big.Therefore, can not stably discharge ink droplet according to the ink-jet printer of comparative example.

The wall surface that limits nozzle connectivity slot 5, pressure chamber 6, resistance groove 7 and storage ink groove 8 can form to such an extent that make their surface roughness (Ra) be no more than 2 μ m.But the wall surface 1b of the wall surface 1a of pressure chamber 6 and nozzle connectivity slot 5 can satisfy the demand of surface roughness at least.

With reference to Figure 11, second embodiment of the separator of ink-jet printer illustrates with cutaway view according to the present invention.Figure 11 of the similar part adopting by reference of the part same reference numerals of describing with reference Fig. 1-4 describes.In this embodiment, separator 41 has nozzle side groove 42 and the barrier film side trench 43 that is formed on wherein, and they are as the ink groove that ink is directed to the spray orifice 4 of jet board of ink 3.In other words, the separator 1 of aforementioned first embodiment has one-sided ink groove, and the separator 41 of this second embodiment has bilateral ink groove.

In this embodiment, barrier film side trench 43 is used for exerting pressure to ink by means of pressue device such as piezoelectric element as pressure chamber's (pressure groove).Nozzle side groove 42 is connected to barrier film side trench 43 via connectivity slot 44,45.

Because nozzle side groove 42 and barrier film side trench 43 form about the nozzle bore 4 of nozzle plate 3, the ink of pressurized not only is directed to nozzle bore 4 via connectivity slot 44 and nozzle side groove 42 but also via connectivity slot 45 in barrier film side trench 43 (pressure groove).Adopt this configuration, even in high-frequency operating process, also can fill up ink fully again.

With reference to Figure 12,13, an example being made being used to of adopting the technology of the aforementioned first embodiment separator 1 by the present inventor is shown.At first, shown in Figure 12 A, provide the monocrystalline silicon substrate 61 (silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 62 and the thick nitride film 63 of 0.2 μ m of 1.0 μ m in the both sides of silicon substrate 61.Nitride film 63 forms by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 12 B, on the nitride film 63 (in the bonding side of nozzle plate) of silicon substrate 61, formed resist figure 64, the opening that it has the opening that is used for nozzle connectivity slot 5 and is used for the recess 31 of remaining bonding agent.Then, by dry etching nitride film 63, composition is used for the opening 65,66 of nozzle connectivity slot 5 and recess 31.The resist (not shown) is formed on the side of the whole not etching of silicon substrate 61a.

Then, shown in Figure 12 C, after filling the opening 66 of nitride film 63, have geometry and be formed on corresponding to the resist figure 67 of the opening of nozzle connectivity slot 5 geometries on the nitride film 63 of silicon substrate 61 (in the bonding side of nozzle plate) with resist.Then, by utilize resist figure 67 as mask to silicon oxide film 62 dry etchings and composition is used for the opening 68 of nozzle connectivity slot 5.

Then, shown in Figure 12 D, (in the bonding side of barrier film) formed resist figure 69 on the nitride film 63 of silicon substrate 61, and this resist figure 69 has the opening that is used for pressure chamber 6 and is used for the opening of the recess 32 of unnecessary bonding agent.Then, composition is used for the opening 70,71 of pressure chamber 6 and recess 32 by dry etching nitride film 63.

Then, shown in Figure 12 E, after filling the opening of nitride film 63, have geometry and be formed on corresponding to the resist figure 72 of the opening of pressure chamber's 6 geometries on the nitride film 63 of silicon substrate 61 (in the bonding side of barrier film) with resist.Then, by utilize resist figure 72 as mask to silicon oxide film 62 dry etchings and composition is used for the opening 73 of pressure chamber 6.

Then, as shown in FIG. 13A, by utilizing ICP (inductive couple plasma) dry etching device from the bonding side dry etching of barrier film silicon substrate 61 and composition is used for the hole 74 of nozzle connectivity slot 5.At this moment, the thickness of resist 72 is 8 μ m.Utilize the dry etching of ICP dry etching device to stop when 74 degree of depth reach 300 μ m in the hole.

Then, shown in Figure 13 B, after removing resist 72, the through hole 75 that is used for nozzle connectivity slot 5 forms by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61.This anisotropic etch process is carried out from the both sides (that is, bonding side of nozzle plate and the bonding side of barrier film) of silicon substrate 61.Although (that is, after etching penetrates silicon substrate 61 first by anisotropic etching) just forms sloping portion by anisotropic etching after forming through hole 75, sloping portion is thoroughly removed by this etching technics.

Then, shown in Figure 13 C, be used for the opening 76 and the opening 77,78 that is used for recess 31,32 of pressure chamber 6 as fluoric acid wet etching silicon oxide film 62 compositions of mask utilization dilution with nitride film 63.

Then, shown in Figure 13 D, form recess 80 and recess 31,32 corresponding to pressure chamber 6 by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61.

In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.In addition, silicon substrate 61 (silicon wafer) is subjected to mechanically shaking.This shakes operation and prevent that the hydrogen that generates is attached on the wall surface in this etching process, and the surface roughness (Ra) that can make the basal surface (that is, with barrier film 2 facing surfaces) corresponding to pressure chamber's 6 recesses 80 is less than 2 μ m.

Then, shown in Figure 13 E, remove silicon oxide film 62 and nitride film 63.Then, the thick silicon oxide film of 1 μ m forms anti-liquid film 10 (not shown), makes the process of separator 1 and finishes.

In above-mentioned technology, surface roughness (Ra) is carried out at the surface of the pressure chamber 6 relative with barrier film 2 less than the special operational of 2 μ m.Therefore, obtained and to have moved and to have guaranteed the ink smooth flow and the ink jet-print head that bubble is obstructed from the teeth outwards with the reliability of higher degree.

At this, the anisotropic etching of silicon substrate is described with reference to Figure 14.Relation between surface characteristics when Figure 14 illustrates potassium hydroxide solution concentration and anisotropic etching (, surface roughness).

Concentration of potassium hydroxide is high more, and (Ra) is more little for surface roughness.But, being well known that the potassium hydroxide of excessive concentrations has formed the protrusion that (110) surface with silicon centers on, this structure is commonly referred to as " miniature pyramid ".Among Figure 14, the zone of symbol A indication is not generate miniature pyramidal zone.The zone of symbol C indication is the zone of surface roughness (Ra) less than 2 μ m.The zone of symbol B indication is not generate miniature pyramid and surface roughness (Ra) zone less than 2 μ m.Therefore, the process conditions of anisotropic etching are preferably established at the zone that prevents just within the area B that bubble (hydrogen) from adhering to.

In addition, using potassium hydroxide solution to carry out in the situation of anisotropic etching, the etching speed of silicon is maximum within the 20-25% in potassium hydroxide solution concentration.In this concentration range,, be higher than 80 ℃ processing temperature for the requirement of area B.The suitable selection of processing conditions (concentration and temperature) and the minimum change of etching program make the reliability of ink-jet printer improve.

With reference to Figure 15,16, an example of the technology that is used to make the aforementioned second embodiment separator 41 (shown in Figure 11) is shown.At first, shown in Figure 15 A, provide the monocrystalline silicon substrate 91 (being silicon wafer substrate in this example) of the crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 92 and the thick nitride film 93 of 0.2 μ m of 1.0 μ m in the both sides of silicon substrate 91.Nitride film 93 forms by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 15 B, at nitride film 93 sides (in the bonding side of nozzle plate) the formation resist figure 94 of silicon substrate 91, this resist figure 94 has the opening that is used for nozzle side groove 42 and is used for the recess 31 of remaining bonding agent.Then, the opening 95,96 that is used for nozzle side groove 42 and recess 31 by dry etching nitride film 93 compositions.The resist (not shown) is formed on the whole not etching side of silicon substrate 91a.

Then, shown in Figure 15 C, filled after the opening 96 of nitride film 93, had geometry and be formed on corresponding to the resist figure 97 of the opening of connectivity slot 44,45 geometries on the nitride film 93 of silicon substrate 91 (in the bonding side of nozzle plate).Then, by utilizing resist figure 97 to be used for the opening 98 of connectivity slot 44,45 as mask dry etching silicon oxide film 92 compositions.

Then, shown in Figure 15 D, (in the bonding side of barrier film) forms resist figure 69 on the nitride film 93 of silicon substrate 91, and this resist figure 69 has the opening that is used for barrier film side trench 43 and is used for the recess 32 of remaining bonding agent.Then, the opening 100,101 that is used for barrier film side trench 43 and recess 32 by dry etching nitride film 93 compositions.

Then, shown in Figure 15 E, filled after the opening 101 of nitride film 93, had geometry and be formed on corresponding to the resist figure 102 of the opening of connectivity slot 44,45 geometries on the nitride film 93 of silicon substrate 91 (in the bonding side of barrier film).Then, by utilizing resist figure 102 to be used for the opening 103 of connectivity slot 44,45 as mask dry etching silicon oxide film 92 compositions.

Then, shown in Figure 16 A, be used for the hole 104 of connectivity slot 44,45 from the bonding side dry etching of barrier film silicon substrate 91 compositions by utilizing ICP (inductive couple plasma) dry etching device.At this moment, the thickness of resist 102 is 8 μ m.

Then, shown in Figure 16 B, remove after the resist 102, utilize potassium hydroxide solution anisotropic etching silicon substrate 91 to form the through hole 105 that is used for connectivity slot 44,45 that barrier film side trench 43 is connected to nozzle side groove 42.

Then, shown in Figure 16 C, be used for the opening 106,107 of nozzle side groove 42 and barrier film side trench 43 as fluoric acid wet etching silicon oxide film 92 compositions of mask utilization dilution and be used for the opening 108,109 of recess 31,32 with nitride film 93.

Then, shown in Figure 16 D, the recess 110,111 that utilizes potassium hydroxide solution anisotropic etching silicon substrate 91 to form, and recess 31,32 corresponding to nozzle side groove 42 and barrier film side trench 43.

In this technology, the concentration of potassium hydroxide solution is 30%, and processing temperature is 85 ℃.In addition, silicon substrate 91 (silicon wafer) is subjected to mechanically shaking.This shakes operation and prevent that the hydrogen that generates is attached on the wall surface in this etching process, and the surface roughness (Ra) that can make the basal surface (that is, with barrier film 2 facing surfaces) corresponding to the recess 11 of pressure chamber 6 is less than 2 μ m.

Then, shown in Figure 16 E, remove nitride film 93 and silicon oxide film 92.Then, the thick silicon oxide film of 1 μ m forms anti-liquid film 10 (not shown), makes the process of separator 1 and finishes.

In above-mentioned technology, surface roughness (Ra) is carried out at the surface of the barrier film side trench 43 (pressure chamber) relative with barrier film 2 less than the special operational of 2 μ m.Therefore, obtained and to have moved and to have guaranteed the ink smooth flow and the ink jet-print head that bubble is obstructed from the teeth outwards with the reliability of higher degree.In addition, owing to being provided with additional trenches (that is, nozzle side groove 42), separator 41 its nozzle plate sides are used to supply ink, so, improve print speed thus even under high-frequency operational circumstances, also can be full of ink fully again.

With reference to Figure 17, Figure 17 illustrates the test result (surface roughness (Ra) is not more than 2 μ m) of the implant operation of the ink jet-print head that is equipped with separator 1, and this separator 1 is made according to aforementioned first embodiment.In order to compare, process conditions (that is, the concentration of potassium hydroxide solution and temperature and the condition relevant with bubble adhesion power) are changed, thereby form several test separators that have the surface roughness (Ra) of 3 μ m, 4 μ m and 5 μ m respectively.

As shown in figure 17, had been found that the fault of the ink-jet printer that under the situation of surface roughness (Ra), takes place, injected fault (empty-drop injection) as venting fault and empty drippage greater than 2 μ m.Find that also surface roughness (Ra) is big more, then the possibility that breaks down of ink-jet printer is big more.Compare with these testability printheads, have been found that these faults can not occur in the situation of the ink jet-print head with separator constructed in accordance 1 (surface roughness (Ra) is not more than 2 μ m).

Next, the 3rd embodiment of the separator according to the present invention is described with reference to Figure 18-20.The part similar to the part of reference Fig. 1-4 description described with reference to the Figure 18-20 that uses same reference numerals.

Figure 18 A illustrates the plane according to the separator 11 of the 3rd embodiment, is used to illustrate the nozzle plate gluing of surfaces of separator 11; Figure 18 B illustrates the enlarged detail of nozzle connectivity slot 55.Figure 19 A illustrates the plane of separator 11, is used to illustrate the barrier film gluing of surfaces of separator 11.Figure 19 B illustrates the enlarged detail of pressure chamber 36.Figure 20 A illustrate separator 11 according to comparative example ' the perspective view of part (that is, being used to print the part of (point)); Figure 20 B illustrates the perspective view according to the part of the separator 11 of third embodiment of the invention.

With reference to Figure 20 B (with Fig. 8,9) that comparative example is shown, nozzle connectivity slot 55 on the bonding side of nozzle plate ' opening shape be a parallelogram, it has two acute corners (being indicated by the circle symbol of Figure 20 A and Fig. 9 (a)), and each turning is limited by two lines that connect with acute angle; Also has turning, two obtuse angles (each turning is limited by two lines that connect with the obtuse angle) (seeing Fig. 8 (b)).This opening shape has increased the possibility that bubble and ink is retained in two acute corners places.Equally, near the pressure chamber 36 of the nozzle connectivity slot 55 ' below on the bonding side of barrier film ' opening shape limit by three lines that comprise acute corners (by the circle symbol among Figure 20 A and Fig. 9 (b) indication) institute.In this opening shape, when utilizing bonding agent with separator 11 ' when bonding on the barrier film 2, bonding agent by capillarity flow nozzle connectivity slot 55 ', this causes the skew of venting fault or drop trajectory line.

On the contrary, according to the 3rd embodiment, the opening shape of the nozzle connectivity slot 55 on the bonding side of nozzle plate is limited by six lines that only connect with the obtuse angle, therefore has turning, six obtuse angles (seeing the circle symbol of Figure 20 B and Figure 18 B).Equally, limits by four lines that only connect, have turning, obtuse angle (indicating) thus by the circle symbol among Figure 20 B and Figure 19 B with the obtuse angle near the opening shape of the pressure chamber 66 below the nozzle connectivity slot on the bonding side of barrier film 55.Compare with the opening shape of above-mentioned comparative example, this opening shape can prevent bonding agent because capillarity flow nozzle connectivity slot 55 prevents the skew of venting fault or drop trajectory line thus.

With reference to Figure 19 A, according to comparative example, the nearest nozzle connectivity slot 55 of nozzle bore 4 ' inner surface by perpendicular to separator 11 ' four surfaces of nozzle plate gluing of surfaces limit.Equally, the pressure chamber 36 on the bonding side of barrier film ' inner surface by perpendicular to separator 11 ' three of barrier film gluing of surfaces surfaces limit.

On the other hand, with reference to Figure 19 B, according to the 3rd embodiment, the inner surface of the nozzle connectivity slot 55 that nozzle bore 4 is nearest is by limiting perpendicular to four surfaces of the nozzle plate gluing of surfaces of separator 11 and the surface of two inclinations, and described inclined surface is connected to (from the cutaway view finding) on the nozzle plate gluing of surfaces with the obtuse angle.In addition, the inner surface of the pressure chamber 66 on the bonding side of barrier film is limited by three surfaces and the inclined surface perpendicular to the barrier film gluing of surfaces of separator 11, and this inclined surface is connected to (from the cutaway view finding) on the barrier film gluing of surfaces with the obtuse angle.Compare with above-mentioned comparative example, these inclined surfaces can prevent the reservation of bubble and ink, prevent fault thus, inject fault as venting fault and empty drippage.

In addition, discuss as reference Figure 19 B, the shape of cross section of nozzle connectivity slot 55 changes to the nearest hexagon of nozzle bore 4 from the quadrangle of separator 11 inboards.This shape of cross section can address the problem, as control and because the difficulty in the resistance increase that the opposing that many spaces inner surface complexity causes is flowed of flowing.

With reference to Figure 21,22, an example of the technology that is used to make aforementioned the 3rd embodiment separator 11 is shown.Be described with Figure 21,22 of reference Figure 12, the 13 similar part adopting by reference of the part same reference numerals of describing.

At first, shown in Figure 21 A, provide the monocrystalline silicon substrate 61 (being silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 62 and the thick nitride film 63 of 0.2 μ m of 1.0 μ m in the both sides of silicon substrate 61.Nitride film 63 forms by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 21 B, formed resist figure 44, the opening that it has the opening that is used for nozzle connectivity slot 55 and is used for the recess 31 of remaining bonding agent in (on the bonding side of nozzle plate) on the nitride film 63 of silicon substrate 61.Then, by dry etching nitride film 63, composition is used for the opening 65,66 of nozzle connectivity slot 55 and recess 31.At this moment, the opening 65 that is used for nozzle connectivity slot 55 is patterned into six hexagons that line limits that connect by with the obtuse angle.

Then, (in the bonding side of barrier film) formed resist figure 67 on the nitride film 63 of silicon substrate 61, and it has the opening of geometry corresponding to nozzle connectivity slot 55 geometries.Then, shown in Figure 21 C, be used for the opening 68 of nozzle connectivity slot 55 as mask dry etching silicon oxide film 62 compositions by utilizing resist figure 67.

Then, shown in Figure 21 D, at nitride film 63 sides (in the bonding side of barrier film) the formation resist figure 69 of silicon substrate 61, this resist figure 69 has the opening that is used for pressure chamber 36 and is used for the recess 32 of remaining bonding agent.Then, the opening 70,71 that is used for pressure chamber 36 and recess 32 by dry etching nitride film 63 compositions.

Then, at nitride film 63 sides (in the bonding side of barrier film) the formation resist figure 72 of silicon substrate 61, this resist figure 72 has the opening of geometry corresponding to pressure chamber's 36 geometries.Then, shown in Figure 21 E, be used for the opening 73 of pressure chamber 36 as mask dry etching silicon oxide film 62 compositions by utilizing resist figure 72.

Then, shown in Figure 22 A, by utilizing ICP (inductive couple plasma) dry etching device from the bonding side dry etching of barrier film silicon substrate 61 and composition is used for the hole 74 of nozzle connectivity slot 55.At this moment, the thickness of resist 72 is 8 μ m.Utilize the dry etching of ICP dry etching device to stop when 74 degree of depth reach 300 μ m in the hole.

Then, shown in Figure 22 B, remove after the resist 72, utilize potassium hydroxide solution anisotropic etching silicon substrate 61 to be formed for the through hole 75 of nozzle connectivity slot 5.This anisotropic etch process is carried out from the both sides (that is, bonding side of nozzle plate and the bonding side of barrier film) of silicon substrate 61.Although (that is, after etching penetrates silicon substrate 61 first by anisotropic etching) just forms sloping portion by anisotropic etching after forming through hole 75, sloping portion is thoroughly removed by this etching technics.

Then, shown in Figure 22 C, with nitride film 63 as the fluoric acid wet etching silicon oxide film 62 of mask utilization dilution and composition is used for the opening 76 of pressure chamber 36 and be used for the opening 77,78 of recess 31,32.

Then, shown in Figure 22 D, the recess 80 and the recess 31,32 that utilize potassium hydroxide solution anisotropic etching silicon substrate 61 to form corresponding to pressure chamber 36.

Then, shown in Figure 22 E, remove silicon oxide film 62 and nitride film 63.Then, the thick silicon oxide film of 1 μ m forms anti-liquid film 10 (not shown), makes the process of separator 11 and finishes.

Like this, according to this embodiment, the opening shape of the nozzle connectivity slot 55 on the separator 11 nozzle plate gluing of surfaces is limited by six lines that connect with the obtuse angle, and is limited by four lines with the obtuse angle connection near the opening shape of the pressure chamber 36 below the nozzle connectivity slot 55 of barrier film gluing of surfaces.Thus, by not forming any acute corners, can prevent from utilizing bonding agent separator 11 to be bonded in the subsequent process of nozzle plate 3 because capillarity makes bonding agent flow nozzle connectivity slot 55.In addition,, can prevent the reservation of bubble and ink, improve the reliability of ink-jet printer thus by forming inclined surface.

Next, with reference to four embodiment of Figure 23 explanation according to separator of the present invention.The part similar to the part of reference Figure 11 description described with reference to the Figure 23 that uses same reference numerals.Described the same with reference Figure 11, the separator 441 of the 4th embodiment has bilateral ink groove.The structure of the separator 441 of the 4th embodiment is equal to the separator 41 of aforementioned second embodiment, and except inclined surface 441a is formed on the corner of nozzle side groove 42 and barrier film side trench 43, and this is identical with aforementioned the 3rd embodiment.Opening shape (not shown) near the nozzle side groove 42 of nozzle bore 4 belows is limited by four lines that connect with the obtuse angle, and is the same with the situation of aforementioned the 3rd embodiment.Equally, limit by four lines that connect with the obtuse angle near the opening shape (not shown) of the barrier film side trench 43 of nozzle bore 4 belows, the same with the situation of aforementioned the 3rd embodiment.

According to the 4th embodiment,, can prevent when utilizing bonding agent that separator 441 is bonded to nozzle plate 3 because capillarity makes bonding agent flow nozzle connectivity slot 44,45 by not forming the turning, any obtuse angle of opening shape in separator 441 both sides.In addition,, can prevent the reservation of bubble and ink, improve the reliability of ink-jet printer thus by forming inclined surface.In addition, by the additional trenches (that is, nozzle side groove 42) that on the nozzle plate side, is formed for supplying ink, so, improve print speed thus even under the high frequencies of operation situation, also can be full of ink fully again.

With reference to Figure 24,25, an example of the technology that is used to make aforementioned the 4th embodiment separator 441 is shown.Be described with reference to the Figure 24,25 that adopts same reference numerals with reference Figure 15, the 16 similar parts of describing of part.

At first, shown in Figure 24 A, provide the monocrystalline silicon substrate 91 (being silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 92 and the thick nitride film 93 of 0.2 μ m of 1.0 μ m in silicon substrate 91 both sides.Nitride film 93 forms by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 24 B, formed resist figure 94, the opening that it has the opening that is used for nozzle side groove 42 and is used for the recess 31 of remaining bonding agent in (on the bonding side of nozzle plate) on the nitride film 93 of silicon substrate 91.Then, by dry etching nitride film 93, composition is used for the opening 95,96 of nozzle side groove 42 and recess 31.At this moment, the opening 95 that is used for connectivity slot 45 is patterned into by four lines that connect with the obtuse angle and is limited.

Then, form resist figure 97 on the nitride film 93 of silicon substrate 91, this resist figure 97 has the opening 97 of geometry corresponding to connectivity slot 44,45 geometries.Then, shown in Figure 24 C, be used for the opening 98 of connectivity slot 44,45 as mask dry etching silicon oxide film 92 compositions by utilizing resist figure 97.

Then, shown in Figure 24 D, (in the bonding side of barrier film) forms resist figure 69 on the nitride film 93 of silicon substrate 91, and this resist figure 69 has the opening that is used for barrier film side trench 43 and is used for the recess 32 of remaining bonding agent.Then, the opening 100,101 that is used for barrier film side trench 43 and recess 32 by dry etching nitride film 93 compositions.

Then, (in the bonding side of barrier film) forms resist figure 102 on the nitride film 93 of silicon substrate 91, and this resist figure 102 has the opening of geometry corresponding to connectivity slot 44,45 geometries.Then, shown in Figure 24 E, be used for the opening 103 of connectivity slot 44,45 as mask dry etching silicon oxide film 92 compositions by utilizing resist figure 102.

Then, shown in Figure 25 A, utilize ICP (inductive couple plasma) dry etching device to be used for the hole 104 of connectivity slot 44,45 from the bonding side dry etching of barrier film silicon substrate 91 compositions.At this moment, the thickness of resist 102 is 8 μ m.

Then, shown in Figure 25 B, remove after the resist 102, utilize potassium hydroxide solution anisotropic etching silicon substrate 91 to form the through hole 105 that is used for connectivity slot 44,45 that barrier film side trench 43 is connected to nozzle side groove 42.

Then, shown in Figure 25 C, with nitride film 93 as the fluoric acid wet etching silicon oxide film 92 of mask utilization dilution and composition is used for the opening 106,107 of nozzle side groove 42 and barrier film side trench 43 and be used for the opening 108,109 of recess 31,32.

Then, shown in Figure 25 D, the recess 110,111 that utilizes potassium hydroxide solution anisotropic etching silicon substrate 91 to form, and recess 31,32 corresponding to nozzle side groove 42 and barrier film side trench 43.

Then, shown in Figure 25 E, remove nitride film 93 and silicon oxide film 92.Then, the thick silicon oxide film of 1 μ m forms after anti-liquid film 10 (not shown), makes the process of separator 441 and finishes.

Next, the 5th embodiment of the separator according to the present invention is described with reference to Figure 26-29.

Figure 26 illustrates the decomposition diagram of ink jet-print head.Figure 27 illustrates the cutaway view of vertical intercepting of ink jet-print head.Figure 28 illustrates the cutaway view of the taken transverse of ink jet-print head critical piece.Figure 29 illustrates the cutaway view of the separator (comprising storage ink groove 8 and resistance groove 7) of ink jet-print head.The similar part of describing with reference Fig. 1-4 of part is described with reference to the Figure 26-29 that adopts same reference numerals.

The structure of the separator 331 of the 4th embodiment is equal to the structure of the separator 1 of aforementioned first embodiment, except separator 331 has pseudo-chamber (pseudo-pressure) 26 (it does not constitute the ink groove) and is formed on the recess 25 on the bonding side of nozzle plate and has the recess 27 that is formed on the bonding side of barrier film.Recess 25,27 receives the unnecessary bonding agent that overflows respectively when separator 331 bonds on nozzle plate 3 and the barrier film 2.

Additional disclosure, in aforementioned first embodiment, separator 1 has pressure chamber 6, resistance groove 7 and storage ink groove 8 (the seeing Fig. 1-4) that are formed on the bonding side of nozzle plate.But under this state, the surface area difference between nozzle plate gluing of surfaces and the barrier film gluing of surfaces is bigger.Should be noted that surface area is based on the separator surface that contact with object component (that is, nozzle plate 3 and barrier film 2) surface and definite.In other words, in this case, do not determine the surface area of nozzle plate gluing of surfaces by the counting concave surface relevant with nozzle connectivity slot 5.Equally, by counting and pressure chamber 6, resistance groove 7 with store up the surface that ink groove 8 relevant concave surfaces are determined the barrier film gluing of surfaces.

Surface area difference between nozzle plate gluing of surfaces and the barrier film gluing of surfaces becomes big more, because the possibility that the separator that the stress of anti-liquid film 10 inboards causes distortion (bending) takes place is big more.Particularly, be that the distortion of separator (bending) is easier to take place under the situation about being made by highly anti-fluent material (as silica and titanium nitride) at anti-liquid film 1.

Reason for this reason makes the surface area of nozzle plate gluing of surfaces be substantially equal to the surface area of barrier film gluing of surfaces according to the formation of the 5th embodiment separator 331.Particularly, this substantially the same surface area is by forming pseudo-chamber 26 and recess 25 on the bonding side of the nozzle plate of separator 331 and form recess 27 acquisitions on the bonding side of barrier film.

Under the situation that forms anti-liquid film 10 on the ink trench wall surface, essentially identical surface area weakens between the both sides stress difference in the film, the distortion (bending) that alleviates separator 331 thus between separator 331 both sides.Therefore, can improve bonding reliability between separator 331 and the nozzle plate 3, and bonding reliability between separator 331 and the barrier film 2.In addition, make that fault in the manufacture process is bonding minimumly can to improve output, cost reduces thus.

As for detailed explanation, please refer to Figure 29-31, Figure 30 A illustrates the plane of the nozzle gluing of surfaces of separator 331, and Figure 30 B illustrates the plane of the barrier film gluing of surfaces of separator 331.Figure 31 A illustrate separator 331 according to comparative example ' the plane of nozzle gluing of surfaces.Figure 31 B illustrate separator 331 ' the plane of barrier film gluing of surfaces.

Shown in Figure 30 B, 31B, on barrier film gluing of surfaces 331b, 331b ', separator 331,331 ' have corresponding to pressure chamber 6,6 ' recess and the recess 27,27 that is used to receive unnecessary bonding agent that forms in a similar manner '.Therefore, the recess figure on the barrier film gluing of surfaces 331b of separator 331 and separator 331 ' the recess figure of barrier film gluing of surfaces 331b ' identical.

On the other hand, shown in Figure 30 A, 31A, the recess figure of separator 331 nozzle plate gluing of surfaces 331a be different from separator 331 ' the recess figure of nozzle plate gluing of surfaces 331a '.Particularly, according to the separator 331 of comparative example ' have a plurality of nozzle connectivity slots 5 and be used to receive the recess 57 of unnecessary bonding agent ', and separator 331 according to the present invention has a plurality of pseudo-chambers 26 (opening shape is similar to the recess of the opening shape of pressure chamber 6) and a plurality of recess 25.

Therefore, according to comparative example, the differing greatly of the surface area between recess shapes and nozzle plate gluing of surfaces 331a ' and the barrier film gluing of surfaces 331b '.Determine by experiment, inciting somebody to action

Thick silica forms under the situation of anti-liquid film, this separator 331 ' distortion surpass 6 μ m.At this moment, when separator 331 ' will break down bonding when bonding on nozzle plate 3 or the barrier film 2.Although the thickness of the increase of bonding agent can prevent to a certain extent that fault is bonding, it has increased overflowing of bonding agent, and aspect the rigidity of overall assembling defectiveness.

On the contrary, according to the 5th embodiment, surface area between recess shapes and nozzle plate gluing of surfaces 331a and the barrier film gluing of surfaces 331b does not have difference substantially, because according to the pressure chamber 6 that is formed on the bonding side of barrier film, separator 331 has pseudo-chamber 26 on the bonding side of nozzle plate.Determine by experiment, inciting somebody to action Thick silica forms under the situation of anti-liquid film, and the distortion of this separator 331 is no more than 2 μ m, and when separator 331 bonded on nozzle plate 3 or the barrier film 2, this deformation extent (that is 2 μ m) can not cause fault bonding.

With reference to Figure 32, Figure 32 is illustrated under the situation that forms 1 μ m thick silicon oxide, the test result after the measurement that concerns between the ratio of the surface area of barrier film gluing of surfaces and nozzle plate gluing of surfaces and the distortion grade of separator.

The ratio that is appreciated that surface area from the test result of the measurement of Figure 32 should be within 0.5-2.0, so that make the distortion grade of separator less than 2 μ m.The separator that has less than the distortion grade of 2 μ m can prevent basically because the fault that distortion causes is bonding.

With reference to Figure 33, Figure 33 A illustrates the plane of separator 331 nozzle plate gluing of surfaces according to an alternative embodiment, and Figure 33 B illustrates the plane of the barrier film gluing of surfaces of separator 331.

Separator 331 according to an alternative embodiment has the pseudo-chamber 28 for each formation, and each pseudo-chamber 28 is connected to the outside of separator 331 via the connectivity slot 29 that extends to separator 331 ends.The pseudo-chamber 28 that is used for each that formation opens into separator 331 outsides can prevent that the fault that causes owing to the heating in manufacture process is bonding.

Opposite with the pseudo-chamber 28 according to this alternative, above-mentioned pseudo-chamber 26 with reference to Fig. 5 has the big enclosed volume with external insulation.In this case, when heat and pressure were applied on the separator 331 in bonding process, the air within the pseudo-chamber 26 expanded and can cause fault bonding.Can prevent that fault is bonding although carry out bonding operation under the room temperature, it has increased whole process time so manufacturing cost increases.

On the other hand, according to an alternative embodiment, make pseudo-chamber 28 open into the outside of separator 331 by forming connectivity slot 29, but can make air degrees of expansion minimum, even there is heat to be applied on the separator 331 in bonding process also is so, makes whole process time minimum thus.

With reference to Figure 34,35, an example of the technology of the separator 331 that is used to make the 5th embodiment is shown.

At first, shown in Figure 34 A, provide the monocrystalline silicon substrate 61 (being silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 62a, 62b and thick nitride film 63a, the 63b of 0.2 μ m of 1.0 μ m in the both sides of silicon substrate 61. Nitride film 63a, 63b form by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 34 B, formed resist figure 640 in (on the bonding side of nozzle plate) on the nitride film 63a of silicon substrate 61, it has the opening that is used for nozzle connectivity slot 5, recess 25, pseudo-chamber 28 and connectivity slot 29.This example relates to separator shown in Figure 33, and it has the additional well 25 that is used for receiving at bonding process unnecessary bonding agent.Then, the opening 680,690 that is used for the opening 650,660 of nozzle connectivity slot 5 and recess 25 and is used for pseudo-chamber 28 and connectivity slot 29 by dry etching nitride film 63a composition.

Then, shown in Figure 34 C, after the opening 660,680 and 690 of filling nitride film 63a, have geometry and be formed on corresponding to the resist figure 700 of the opening of nozzle connectivity slot 5 geometries on the nitride film 63 of silicon substrate 61 (in the bonding side of nozzle plate).Then, by utilize resist figure 700 as mask to silicon oxide film 62a dry etching and composition is used for the opening 710 of nozzle connectivity slot 5.

Then, shown in Figure 34 D, (in the bonding side of barrier film) formed resist figure 720 on the nitride film 63b of silicon substrate 61, and this resist figure 720 has the opening that is used for pressure chamber 6 and is used for the opening of the recess 27 of unnecessary bonding agent.Then, composition is used for the opening 730,740 of pressure chamber 6 and recess 27 by dry etching nitride film 63b.

Then, shown in Figure 34 E, after the opening 740 of filling nitride film 63a, has geometry is formed on silicon substrate 61 corresponding to the resist figure 750 of the opening of pressure chamber's 6 geometries nitride film 63b last (in the bonding side of barrier film).Then, by utilize resist figure 750 as mask to silicon oxide film 62 dry etchings and composition is used for the opening 760 of pressure chamber 6.

Then, shown in Figure 35 A, by utilizing ICP (inductive couple plasma) dry etching device from the bonding side dry etching of barrier film silicon substrate 61 and composition is used for the hole 770 of nozzle connectivity slot 5.At this moment, the thickness of resist 750 is 8 μ m.Utilize the dry etching of ICP dry etching device to stop when 770 degree of depth reach 300 μ m in the hole.

Then, shown in Figure 35 B, after removing resist 75, the through hole 780 that is used for nozzle connectivity slot 5 forms by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61.This anisotropic etch process is carried out from the both sides (that is, bonding side of nozzle plate and the bonding side of barrier film) of silicon substrate 61.Although (that is, after etching penetrates silicon substrate 61 first by anisotropic etching) just forms sloping portion by anisotropic etching after forming through hole 780, sloping portion is thoroughly removed by this etching technics.

Then, shown in Figure 35 C, with nitride film 63 as fluoric acid wet etching silicon oxide film 62a, the 62b of mask utilization dilution and composition is used for the opening 840 of pressure chamber 6 and be used for the opening 850 of recess 27, and the opening 810,820 and 830 that is respectively applied for recess 25, pseudo-chamber 28 and connectivity slot 29.

Then, shown in Figure 35 D, form recess 860 and recess 25,27 corresponding to pressure chamber 6 by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61, and corresponding to the recess of pseudo-chamber 28 and connectivity slot 29.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.

Then, shown in Figure 35 E, remove silicon oxide film 62a, 62b and nitride film 63a, 63b.Then, the thick silicon oxide film of 1 μ m forms anti-liquid film 10 (not shown), makes the process of separator 331 and finishes.

Like this, can make deformation level less than 2 μ m, even under the situation that forms anti-liquid film also is like this, because the bonding surface area on the bonding side of nozzle plate that makes of composition equates with surface area on the bonding side of barrier film basically, and the shape of the pressure chamber 6 of the shape approximation of the pseudo-chamber 28 on the bonding side of nozzle plate on the bonding side of barrier film.In addition, can prevent that this is because the formation of connectivity slot 29 makes each pseudo-chamber 28 be in communication with the outside because the mistake that the air expansion of pseudo-chamber 28 inside causes when heat bonding is operated is bonding.

In addition, can form pressure chamber with high accuracy, make venting changing features minimum thus, because separator is made by silicon substrate, ink groove (as pressure chamber and nozzle connectivity slot) forms by the dry etching (part that is used for deep etching) and the combination of wet type anisotropic etching.

In addition, owing to utilize the multilayer film of silica/silicon nitride to carry out wet etching technology, only need two groups of etching technics to form separator in this example as mask.Compare with the situation that only forms the nozzle connectivity slot by dry etching, it has improved output and has reduced production cost thus.

With reference to Figure 36,37, another example of the technology that is used to make the 5th embodiment separator 331 is shown.

At first, shown in Figure 36 A, provide the monocrystalline silicon substrate 61 (being silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick nitride film 93a, the 93b of 150nm in the both sides of silicon substrate 61. Nitride film 93a, 93b form by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 36 B, formed resist figure 940 in (on the bonding side of nozzle plate) on the nitride film 93a of silicon substrate 61, it has the opening that is used for nozzle connectivity slot 5, recess 25, pseudo-chamber 28 and connectivity slot 29.This example relates to separator shown in Figure 33, and it has the additional well 25 that is used for receiving at bonding process unnecessary bonding agent.Then, the opening 980,990 that is used for the opening 950,960 of nozzle connectivity slot 5 and recess 25 and is used for pseudo-chamber 28 and connectivity slot 29 by dry etching nitride film 93a composition.

Then, shown in Figure 36 C, formed resist figure 802, the recess 27 that it has the opening that is used for pressure chamber 6 and is used for unnecessary bonding agent in (on the bonding side of barrier film) on the nitride film 93b of silicon substrate 61.Then, the opening 803 and the opening 804 that is used for recess 27 that are used for pressure chamber 6 by dry etching nitride film 93b composition.

Then, shown in Figure 36 D, on the both sides of silicon substrate 61, form thick high-temperature oxide film 805a, the 805b of 250nm.Then, shown in Figure 36 E, on high- temperature oxide film 805a, 805b, form thick nitride film 806a, the 806b of 150nm by LP-CVD.Then, be formed for the opening opposing 807,808 of nozzle connectivity slot 5 by dry etching high- temperature oxide film 805a, 805b and nitride film 806a, 806b.

Then, shown in Figure 37 A, on nitride film 806b, form after the resist 809, utilize ICP (inductive couple plasma) dry etching device from the bonding side dry etching of barrier film silicon substrate 61 and composition is used for the hole 810 of nozzle connectivity slot 5.At this moment, the thickness of resist 809 is 8 μ m.

Then, shown in Figure 37 B, after removing resist 809, the through hole 811 that is used for nozzle connectivity slot 5 forms by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61.

Then, shown in Figure 37 C, utilize high- temperature oxide film 805a, 805b to remove nitride film 806a, 806b by heated phosphate, calculate by the fluorine of dilution and remove high- temperature oxide film 805a, 805b as barrier film.

Then, shown in Figure 37 D, form recess 816 and recess 25,27 corresponding to pressure chamber 6 by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61, and corresponding to the recess of pseudo-chamber 28 and connectivity slot 29.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.

Then, shown in Figure 37 E, remove silicon oxide film 93a, 93b and nitride film 63a, 63b.Then, the thick silicon oxide film of 1 μ m forms after anti-liquid film 10 (not shown), makes the process of separator 331 and finishes.

In this example, the same with the situation of foregoing example, can make deformation level less than 2 μ m, even under the situation that forms anti-liquid film also is like this, because the bonding surface area on the bonding side of nozzle plate that makes of composition equates with surface area on the bonding side of barrier film basically, and the shape of the pressure chamber 6 of the shape approximation of the pseudo-chamber 28 on the bonding side of nozzle plate on the bonding side of barrier film.In addition, can prevent that because the mistake that the expansion of the air of pseudo-chamber interior causes when heat bonding is operated is bonding, this is because the formation of connectivity slot 29 makes each pseudo-chamber 28 be in communication with the outside.

In addition, can form pressure chamber with high accuracy, make venting changing features minimum thus, because separator is made by silicon substrate, ink groove (as pressure chamber and nozzle connectivity slot) forms by the dry etching (part that is used for deep etching) and the combination of wet type anisotropic etching.

In addition, owing to utilize the multilayer film of silica/silicon nitride to carry out wet etching technology, only need two groups of etching technics to form separator in this example as mask.Compare with the situation that only forms the nozzle connectivity slot by dry etching, it has improved output and has reduced production cost thus.In addition, can be with the high accuracy controlling dimension, because only need nitride film to form pressure chamber as mask.

With reference to Figure 38,39, another example of the technology of the separator 331 that is used to make the 5th embodiment is shown.

At first, shown in Figure 38 A, provide the monocrystalline silicon substrate 61 (being silicon wafer substrate in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick nitride film 123a, the 123b of 150nm in the both sides of silicon substrate 61. Nitride film 123a, 123b form by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 38 B, formed resist figure 124 in (on the bonding side of nozzle plate) on the nitride film 123a of silicon substrate 61, it has the opening that is used for nozzle connectivity slot 5, recess 25, pseudo-chamber 28 and connectivity slot 29.This example relates to separator shown in Figure 33, and it has the additional well 25 that is used for receiving at bonding process unnecessary bonding agent.Then, be used for the opening 125 of nozzle connectivity slot 5 and be used for the opening 126 of recess 25 by dry etching nitride film 123a composition, and the opening 128,129 that is used for pseudo-chamber 28 and connectivity slot 29.

Then, shown in Figure 38 C, formed resist figure 132, the recess 27 that it has the opening that is used for pressure chamber 6 and is used for unnecessary bonding agent in (on the bonding side of barrier film) on the nitride film 123b of silicon substrate 61.Then, the opening 133 and the opening 134 that is used for recess 27 that are used for pressure chamber 6 by dry etching nitride film 123b composition.

Then, shown in Figure 38 D, form resist figure 136 in the bonding side of nozzle plate, it has the opening 135 that is used for nozzle connectivity slot 5.At this moment, the thickness of resist figure 136 is 8 μ m.

Then, shown in Figure 39 A, by utilizing ICP (inductive couple plasma) dry etching device from the bonding side dry etching of barrier film silicon substrate 61 and composition is used for the hole 137 of nozzle connectivity slot 5.

Then, shown in Figure 39 B, remove after the resist figure 136, by utilizing potassium hydroxide solution anisotropic etching silicon substrate 61 to be formed for the through hole 138 of nozzle connectivity slot 5 and corresponding to the recess 139 of pressure chamber 6, recess 25,27 with corresponding to the recess of pseudo-chamber 28 and connectivity slot 29.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.

Then, shown in Figure 39 C, remove silicon oxide film 123a, 123b.Then, the thick silicon oxide film of 1 μ m forms after anti-liquid film 10 (not shown), makes the process of separator 331 and finishes.

In this example, the same with the situation of foregoing example, can make deformation level less than 2 μ m, even under the situation that forms anti-liquid film also is like this, because the bonding surface area on the bonding side of nozzle plate that makes of composition equates with surface area on the bonding side of barrier film basically, and the shape of the pressure chamber 6 of the shape approximation of the pseudo-chamber 28 on the bonding side of nozzle plate on the bonding side of barrier film.In addition, can prevent that because the mistake that the expansion of the air of pseudo-chamber interior causes when heat bonding is operated is bonding, this is because the formation of connectivity slot 29 makes each pseudo-chamber 28 be in communication with the outside.

In addition, can form pressure chamber with high accuracy, make venting changing features minimum thus, because separator is made by silicon substrate, ink groove (as pressure chamber and nozzle connectivity slot) forms by the dry etching (part that is used for deep etching) and the combination of wet type anisotropic etching.

In addition, owing to only utilize nitride film to carry out wet etching technology as mask, thus can be with the high accuracy controlling dimension, and make venting changing features minimum, and reduce manufacturing process.

With reference to Figure 40 and 41, Figure 40 illustrates the decomposition diagram of ink jet-print head according to an alternative embodiment.Figure 41 illustrates the cutaway view of the ink jet-print head of Figure 40.

Ink jet-print head according to an alternative embodiment comprises groove forming element 141 (separator).Barrier film 142 is installed on the groove forming element.Piezoelectric element 144 by clamper 143 clampings bonds on the groove forming element 141.

Groove forming element 141 is made by silicon substrate, and have the trench portions that is used for nozzle 145, be used to be connected to the recess in the pressure chamber 146 of nozzle 145, the trench portions that is used for resistance groove 147 (its as liquid resistance), and the recess that is used to store up ink groove 148 that forms by anisotropic etching.Groove forms element 141 and also has the ink supply groove 149 that is connected on the storage ink groove 148.

The ink groove of just having described is set up when barrier film 142 bonds on the groove forming element 141.In this case, barrier film 142 is also as cover piece.Anti-liquid film (not shown) is formed on the wall surface of ink contact that groove forms element 141, as the wall surface of nozzle 145, the wall surface of resistance groove 147 and the wall surface of storage ink groove 148.

Piezoelectric element 144 has the non-drive part 151 that forms by the stack of multilayer only piezoelectric raw cook.Piezoelectric element 144 has the drive part 152 that forms by stack raw cook of multilayer alternately and internal electrode on non-drive part 151.Extend to non-drive part 151 rather than penetrate the groove of non-drive part 151 by formation, make a plurality of piezoelectric elements 156.Barrier film 142 bonds on the end face of piezoelectric element 156.

Adopt this ink jet-print head, apply the 20-50V pulse voltage selectively and cause piezoelectric element 156 on stacked direction, to be out of shape, cause barrier film 142 thus and move towards pressure chamber 146 to piezoelectric element 156.Then, according to the volume-variation of (injection) pressure chamber 146 that will discharge as drops out from nozzles 145 on perpendicular to the deformation direction of piezoelectric element, the ink in the pressure chamber 146 is pressurizeed.

The situation of embodiment is the same as described above, groove forming element 141 has the recess 155 that is used for pseudo-chamber on its basal surface, the opening shape of this recess 155 is similar to the opening shape of ink groove, this ink groove for example be formed on basal surface facing surfaces (that is top surface) in pressure chamber 146.Therefore, groove forming element 141 has identical surface area (except recess) on the both sides.

Therefore, according to this alternative, can reduce the deformation extent of the groove forming element of making by silicon substrate 141, improve the reliability of bonding operation thus, even prevent that by efficient anion ink film (as silicon oxide film and nitride film) also is like this when forming at anti-liquid film.

With reference to Figure 42-44, Figure 42 illustrates the perspective view according to the ink jet-print head of another alternative, and Figure 43 illustrates the decomposition diagram of ink jet-print head.Figure 44 illustrates from the ink groove and forms the perspective view that groove that side sees forms element.

Ink jet-print head according to an alternative embodiment comprises first substrate 161 corresponding to groove forming element (separator).Second substrate 162 as heating element heater is installed in first substrate 161.First substrate 161 and second substrate 162 be defined for a plurality of nozzles 165 of spraying ink droplet jointly, be connected to pressure chamber 166 on the nozzle 165, be used for the storage ink groove 168 to pressure chamber's 166 ink supply, or the like.Penetrate as ink droplet from nozzle 165 via storage ink groove 168 and pressure chamber's 166 guiding by the ink that is formed on ink supply aperture 169 supplies in first substrate 161.

First substrate 161 is made by silicon substrate, and has trench portions that is used for nozzle 165 and pressure chamber 166 and the recess that is used to store up ink groove 168 that forms by etching.The ink groove of just having described is set up when second substrate 162 bonds in first substrate 161.In this case, barrier film 162 also is used as cover piece to limit the ink groove.Anti-liquid film (not shown) is formed on the ink contact surface of first substrate 161 of the bonding side of second substrate.

Second substrate 162 is provided with heating resistance element (electrothermal conversioning element) 171.Second substrate 162 is provided with public electrode 172 and is used for applying to heating resistance element 171 absolute electrode 173 of voltage.

Adopt this ink jet-print head, apply driving voltage to absolute electrode 173 selectively and cause heating resistance element 171 to produce heat, the ink pressure in the initiation pressure chamber 166 changes thus.The variation of this ink pressure causes drops out from nozzles 165 to discharge (injection).

The situation of embodiment is the same as described above, first substrate 161 has the recess 175 that is used for pseudo-chamber on its top surface, the opening shape of this recess 175 is similar to the opening shape of ink groove, this ink groove for example be formed on top surface facing surfaces (that is basal surface) in pressure chamber 166.Therefore, first substrate 161 has identical surface area (except recess) on its both sides.

Therefore, according to this alternative, can reduce the deformation extent of first substrate 161 of making, improve the reliability of bonding operation thus, even prevent that by efficient anion ink film (as silicon oxide film and nitride film) also is like this when forming at anti-liquid film by silicon substrate.

Then, with the 6th embodiment that describes according to separator of the present invention.

In separator (groove forming element), form pseudo-chamber and can prevent that owing to the distortion of preventing the separator that liquid film produces, it has reduced the thickness D (at interval) of the next door 6a between pressure chamber 6 and the pseudo-chamber 26 simultaneously, has reduced the rigidity of next door 6a thus.The reduction of next door 6a rigidity may cause the venting performance and descend.

In this, make assessment for changing as drop speeds under situation of driving during distance D (the thickness D of next door 6a) between the pressure chamber 6 of parameter and the pseudo-chamber 26 and the drop speeds that drives simultaneously under the multidigit situation.Figure 45 illustrates assessment result.Hereinafter, drive one and be known as " single injection ", be known as " repeatedly injecting " and drive multidigit simultaneously.

Apparent from Figure 45, if the distance D between pressure chamber 6 and the pseudo-chamber 26 surpasses 100 μ m, the difference of the drop speeds between then single injects and repeatedly injects disappears.The difference of drop speeds caused the variation at drippage position and influences print image quality between single injected and repeatedly injects.

Relation between the venting fault rate during in addition, for height (degree of depth) H1 of pressure chamber 6 and high frequency discharging high viscosity (4cp) liquid is assessed.

As apparent among Figure 46, if the height of pressure chamber 6 (degree of depth) H1 is more than or equal to 85 μ m, even then also can guarantee stable discharge performance under the situation of using high viscosity liquid.When adopting high viscosity liquid, the height of the deficiency of pressure chamber 6 (degree of depth) H1 causes liquid with the deficiently supply of high driving frequency to pressure chamber 6, and causes the venting fault thus.

In addition, for change as the venting fault under the high driving frequency during distance D between the pressure chamber 6 of parameter and the pseudo-chamber 26 and single injects and repeatedly inject between the difference of drop speeds make assessment.It is the assessment results of 350 μ m when thick that table 1 is illustrated in separator (by silicon substrate).It is the assessment results of 400 μ m when thick that table 2 is illustrated in separator (by silicon substrate).It is the assessment results of 450 μ m when thick that table 3 is illustrated in separator (by silicon substrate).In tabulating down, term " residual thickness (remainingthickness) " refers to the distance D (thickness of next door 6a) between pressure chamber 6 and the pseudo-chamber 26.

[table 1]

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					350	70	210	×	○

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					350	75	200	×	○
350	80	190	×	○
					350	85	180	○	○
350	90	170	○	○
					350	95	160	○	○
350	100	150	○	○
					350	105	140	○	○
350	110	130	○	○
					350	115	120	○	○
350	120	110	○	○
					350	125	100	○	○
350	130	90	○	×
					350	135	80	○	×
350	140	70	○	×

[table 2]

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					400	70	260	×	○
400	75	250	×	○
					400	80	240	×	○
400	85	230	○	○

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					400	90	220	○	○
400	95	210	○	○
					400	100	200	○	○
400	105	190	○	○
					400	110	180	○	○
400	115	170	○	○
					400	120	160	○	○
400	125	150	○	○
					400	130	140	○	○
400	135	130	○	○
					400	140	120	○	○
400	145	110	○	○
					400	150	100	○	○
400	155	90	○	×
					400	160	80	○	×
400	165	70	○	×

[table 3]

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					450	70	310	×	○

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					450	75	300	×	○
450	80	290	×	○
					450	85	280	○	○
450	90	270	○	○
					450	95	260	○	○
450	100	250	○	○
					450	105	240	○	○
450	110	230	○	○
					450	115	220	○	○
450	120	210	○	○
					450	125	200	○	○
450	130	190	○	○
					450	135	180	○	○
450	140	170	○	○
					450	145	160	○	○
450	150	150	○	○
					450	155	140	○	○
450	160	130	○	○
					450	165	120	○	○
450	170	110	○	○
					450	175	100	○	○

Wafer thickness	Pressure chamber's degree of depth	Residual thickness	The high-frequency venting	Difference between single injects and repeatedly injects
					450	180	90	○	×
450	185	80	○	×
					450	190	70	○	×

Apparent from these assessment results, no matter wafer thickness what, even the venting fault under the high driving frequency that also can not take place to cause owing to insufficient ink supply when adopting high viscosity liquid is if the height of pressure chamber 6 (degree of depth) H1 is more than or equal to 85 μ m.In addition, apparent from these assessment results, if the distance D between pressure chamber 6 and the pseudo-chamber 26, can not take place then that single injects more than or equal to 100 μ m and repeatedly inject between drop speeds poor.

On the basis of these assessment results, make height (degree of depth) H1 of pressure chamber 6 more than or equal to 85 μ m according to the formation of the pressure chamber 6 of the 6th embodiment ink jet-print head.This with regard to allowing since the deformation extent of the silica-based element (separator) that the stress of diaphragm causes reduce; and can eliminate between separator and barrier film or the nozzle plate the bonding possibility of mistake, even prevent that the silicon elution from entering that diaphragm in the anion ink is formed on the silica-based element also is like this.In addition, even also can improve print image quality thus when being emitted on the required high viscosity liquid of print high quality images on the common paper to nozzle ample supply liquid with high frequency.

In addition, the formation according to the ink jet-print head of the 6th embodiment makes that distance D is more than or equal to 100 μ m between pressure chamber 6 and the pseudo-chamber 26.Drop speeds difference between this injects and repeatedly inject with regard to the speed difference minimum, particularly single that allow to cause owing to driven figure place difference.Thereby, can make the drippage position difference minimum that causes owing to driven figure place difference, and improve print image quality thus.

With reference to Figure 47,48, show an example of the technology that is used to make the 6th embodiment separator.

At first, shown in Figure 47 A, provide the monocrystalline silicon substrate 61 (being silicon wafer in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 62a, 62b and thick silicon nitride film 63a, the 63b of 0.15 μ m of 1.0 μ m in the both sides of silicon substrate 61. Nitride film 63a, 63b form by LP-CVD (low-pressure chemical vapor deposition).

Then, shown in Figure 47 B, formed resist figure 64a in (on the bonding side of nozzle plate) on the nitride film 63a of silicon substrate 61, it has the nozzle of being used for connectivity slot 5, recess 25 (being used to receive remaining bonding agent) and pseudo-chamber 26.

Then, by dry etching silicon oxide film 62a and nitride film 63a, composition is used for the opening 65a of nozzle connectivity slot 5 and is used for the opening 66a of recess 25, and the opening 68a that is used for pseudo-chamber 26.At this moment, the opening 68a that is used for pseudo-chamber 26 forms and to have the flat shape (opening shape) that is equal to pressure chamber 6.

Then, shown in Figure 47 C, (in the bonding side of nozzle plate) forms resist figure 46b on the nitride film 63a of silicon substrate 61, and this resist figure 46b has the opening that is used for pressure chamber 6 and is used for the opening (being used to receive remaining bonding agent) of recess 27.Then, by dry etching silicon nitride film 63a, composition is used for the opening 70a of pressure chamber 6 and is used for the opening 71a of recess 27.

Then, shown in Figure 47 D, after resist filling opening 65a, 66a and 68a, the resist figure 72a with the opening 73a that is used for nozzle connectivity slot 5 is formed on the bonding side of nozzle plate of silicon substrate 61.At this moment, the thickness of resist 72a is 8 μ m.

Then, shown in Figure 47 E, utilize resist figure 72a as mask by ICP (inductive couple plasma) dry etching device from the bonding side of nozzle plate to silicon substrate 61 dry etchings, composition is used for the hole 74a of nozzle connectivity slot 5.

Then, shown in Figure 48 A, remove after the resist 72a, utilize potassium hydroxide solution to pass through anisotropic etching silicon substrate 61, be formed for the through hole 75a of nozzle connectivity slot 5.

Then, shown in Figure 48 B, by wet etching remove silicon oxide film 62b corresponding to the opening 70a that is used for pressure chamber 6 and be used for the part of the opening 71a of recess 27.

Then, shown in Figure 48 C, utilize potassium hydroxide solution anisotropic etching silicon substrate 61 compositions to be used for recess 76a, the recess 25,27 of pressure chamber 6 and the recess that is used for pseudo-chamber 26.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.Although (that is, after etching penetrates silicon substrate 61 first by anisotropic etching) just forms sloping portion by anisotropic etching after forming through hole 75a, sloping portion is thoroughly removed by this etching technics.

Then, shown in Figure 48 D, remove silicon oxide film 62a, 62b and nitride film 63a, 63b.Then, after the thick silicon oxide film of 1 μ m formed anti-liquid film 10 (not shown), the technology that is used to make separator was accomplished.

In this way, even under the situation that forms anti-liquid film, also can make deformation extent less than 1 μ m, because the bonding surface area on the bonding side of nozzle plate of making of composition becomes basically identical with surface area on the bonding side of barrier film, and the shape of the pseudo-chamber on the bonding side of nozzle plate become with the bonding side of barrier film on the shape of pressure chamber 6 similar, the formation of connectivity slot allows each pseudo-chamber to be in communication with the outside.

In addition, can form pressure chamber with high accuracy, make venting characteristic variations minimum thus, because separator is made by silicon substrate, and ink groove (as pressure chamber) and nozzle connectivity slot are to combine formation by dry etching (part that is used for deep etching) and wet type anisotropic etching.

In addition, because wet etching technology is to utilize the multilayer film of silica/silicon nitride to carry out as mask, in this example, only need twice wet etching technology to form separator.Compare with the situation that only forms the nozzle connectivity slot, improved output, reduce production costs thus by dry etching.

In this example, the etching depth H2 (seeing Figure 29) of pseudo-chamber is greater than the etching depth H1 of pressure chamber, because pseudo-chamber has experienced wet etching twice.

In addition, the formation of the separator of ink jet-print head makes silicon substrate thickness between pressure chamber 6 and the pseudo-chamber 26 more than or equal to 100 μ m, and the height of pressure chamber 6 (degree of depth of recess 76a) is more than or equal to 85 μ m.Thereby, by making silicon substrate thickness between pressure chamber 6 and the pseudo-chamber 26 more than or equal to 100 μ m, single is injected and repeatedly inject between the drop speeds balance, therefore controlled ink drippage position accurately.In addition, the height by making pressure chamber 6 is more than or equal to 85 μ m, even utilize high viscosity liquid also can supply ink fully under high venting frequency under the situation of print high quality images on the common paper.

With reference to Figure 49,50, show another example of the technology that is used to make the 6th embodiment separator.

At first, shown in Figure 49 A, provide the monocrystalline silicon substrate 61 (being silicon wafer in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon oxide film 92a, the 92b of 1.0 μ m in the both sides of silicon substrate 61.

Then, shown in Figure 49 B, formed resist figure 94a in (on the bonding side of nozzle plate) on the oxidation film 92a of silicon substrate 61, it has the opening that is used for nozzle connectivity slot 5, recess 25 (being used to receive remaining bonding agent) and pseudo-chamber 26.

Then, by dry etching silicon oxide film 92a, composition is used for the opening 95a of nozzle connectivity slot 5 and is used for the opening 96a of recess 25, and the opening 98a that is used for pseudo-chamber 26.At this moment, the opening 98a that is used for pseudo-chamber 26 forms and to have the flat shape (opening shape) that is equal to pressure chamber 6.

Then, shown in Figure 49 C, (in the bonding side of barrier film) forms resist figure 102b on the oxidation film 92a of silicon substrate 61, and this resist figure 102a has the opening that is used for pressure chamber 6 and is used for the opening of the recess 27 of remaining bonding agent.Then, by dry etching silicon nitride film 92b, composition is used for the opening 103a of pressure chamber 6 and is used for the opening 104a of recess 27.

Then, shown in Figure 49 D, fill with resist after opening 95a, the 96a and 98a of silicon oxide film 92a, the resist figure 106a with the opening 105a that is used for nozzle connectivity slot 5 is formed on the bonding side of nozzle plate.At this moment, the thickness of resist figure 106a is 8 μ m.

Then, shown in Figure 50 A, utilize ICP (inductive couple plasma) dry etching device from the bonding side of nozzle plate to silicon substrate 61 dry etchings, composition is used for the hole 107a of nozzle connectivity slot 5.

Then, shown in Figure 50 B, remove after the resist figure 106a, utilize potassium hydroxide solution anisotropic etching silicon substrate 61, the through hole 115a that forms nozzle connectivity slot 5 and be used for the recess 116a of pressure chamber 6, recess 25,27, and the recess of pseudo-chamber 26.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.

Then, shown in Figure 50 C, remove silicon oxide film 92a, 92b.Then, after the thick silicon oxide film of 1 μ m formed anti-liquid film 10 (not shown), the technology that is used to make separator was finished.

In this example, the situation of example is the same as described above, even under the situation that forms anti-liquid film, also can make deformation extent less than 1 μ m, because the bonding surface area on the bonding side of nozzle plate of making of composition becomes basically identical with surface area on the bonding side of barrier film, and the shape of the pseudo-chamber 26 on the bonding side of nozzle plate become with the bonding side of barrier film on the shape of pressure chamber 6 similar.In addition, can prevent that because the mistake that the expansion of the air of pseudo-chamber interior causes when heat bonding is operated is bonding, this is because the formation of connectivity slot makes each pseudo-chamber be in communication with the outside.

In addition, can form pressure chamber with high accuracy, make venting characteristic variations minimum thus, because separator is made by silicon substrate, and ink groove (as pressure chamber) and nozzle connectivity slot are to combine formation by dry etching (part that is used for deep etching) and wet type anisotropic etching.

In addition, because wet etching technology utilizes silicon oxide film to carry out as mask, in this example, only need a wet etching technology to form separator.Compare with the situation that only forms the nozzle connectivity slot by dry etching, this has just improved output, has reduced production cost thus.In addition, when forming pressure chamber 6, have only silicon oxide film to be used as mask,, reduce production costs thus so can simplify the technology of making mask.

In this example, the etching depth H2 (seeing Figure 29) of pseudo-chamber is basically greater than the etching depth H1 of pressure chamber, because pseudo-chamber and pressure chamber have experienced wet etching twice.

In addition, the formation of the separator of ink jet-print head makes the thickness of the silicon substrate between pressure chamber 6 and the pseudo-chamber 26 more than or equal to 100 μ m, and the height of pressure chamber 6 (degree of depth of recess 116a) is more than or equal to 85 μ m.Thereby the thickness by making the silicon substrate between pressure chamber 6 and the pseudo-chamber 26 is more than or equal to 100 μ m, single is injected and repeatedly inject between the drop speeds balance, therefore controlled ink drippage position accurately.In addition, the height by making pressure chamber 6 is more than or equal to 85 μ m, even utilize high viscosity liquid also can supply ink fully under high venting frequency under the situation of print high quality images on the common paper.

With reference to Figure 51,52, show another example of the technology that is used to make the 6th embodiment separator.

At first, shown in Figure 51 A, provide the monocrystalline silicon substrate 61 (being silicon wafer in this example) of the thick crystal orientation (110) of 400 μ m.Then, formed thick silicon nitride film 122a, the 122b of 0.15 μ m in the both sides of silicon substrate 61 by LP-CVD.

Then, shown in Figure 51 B, formed resist figure 124a in (on the bonding side of nozzle plate) on the nitride film 122a of silicon substrate 61, it has the opening that is used for nozzle connectivity slot 5, recess 25 (being used to receive remaining bonding agent) and pseudo-chamber 26.

Then, by dry etching silicon nitride film 122a, composition is used for the opening 125a of nozzle connectivity slot 5 and is used for the opening 126a of recess 25, and the opening 128a that is used for pseudo-chamber 26.At this moment, the opening 128a that is used for pseudo-chamber 26 forms and to have the flat shape (opening shape) that is equal to pressure chamber 6.

Then, shown in Figure 51 C, (in the bonding side of barrier film) forms resist figure 132a on the nitride film 122b of silicon substrate 61, and this resist figure 132a has the opening that is used for pressure chamber 6 and is used for the opening of the recess 27 of remaining bonding agent.Then, by dry etching silicon nitride film 122b, composition is used for the opening 133a of pressure chamber 6 and is used for the opening 134a of recess 27.

Then, shown in Figure 51 D, fill with resist after opening 95a, the 96a and 98a of silicon nitride film 122a, the resist figure 136a with the opening 135a that is used for nozzle connectivity slot 5 is formed on the bonding side of nozzle plate.At this moment, the thickness of resist figure 136a is 8 μ m.

Then, shown in Figure 52 A, utilize ICP (inductive couple plasma) dry etching device from the bonding side of nozzle plate to silicon substrate 61 dry etchings, composition is used for the hole 127a of nozzle connectivity slot 5.At this moment, utilize resist figure 136a to carry out dry etching as mask.

Then, shown in Figure 52 B, remove after the resist figure 136a, utilize potassium hydroxide solution anisotropic etching silicon substrate 61, the through hole 145a that forms nozzle connectivity slot 5 and be used for the recess 146a of pressure chamber 6, recess 25,27, and the recess of pseudo-chamber 26.In this technology, the concentration of potassium hydroxide solution is 30%, and treatment temperature is 85 ℃.

Then, shown in Figure 52 C, remove silicon nitride film 122a, 122b.Then, after the thick silicon oxide film of 1 μ m formed anti-liquid film 10 (not shown), the technology that is used to make separator was finished.

In this example, the situation of example is the same as described above, even under the situation that forms anti-liquid film, also can make deformation extent less than 1 μ m, because the bonding surface area on the bonding side of nozzle plate of making of composition becomes basically identical with surface area on the bonding side of barrier film, and the shape of the pseudo-chamber 26 on the bonding side of nozzle plate become with the bonding side of barrier film on the shape of pressure chamber 6 similar.In addition, can prevent that because the mistake that the expansion of the air of pseudo-chamber interior causes when heat bonding is operated is bonding, this is because the formation of connectivity slot makes each pseudo-chamber be in communication with the outside.

In addition, can form pressure chamber with high accuracy, make venting characteristic variations minimum thus, because separator is made by silicon substrate, and ink groove (as pressure chamber) and nozzle connectivity slot are to combine formation by dry etching (part that is used for deep etching) and wet type anisotropic etching.

In addition, because wet etching technology utilizes silicon nitride film to carry out as mask, in this example, only need a wet etching technology to form separator.Compare with the situation that only forms the nozzle connectivity slot by dry etching, this has just improved output, has reduced production cost thus.In addition, when forming pressure chamber 6, have only silicon nitride film to be used as mask, so can reduce the thickness of mask, controlling dimension accurately thus.

In this example, the etching depth H2 (seeing Figure 29) of pseudo-chamber is substantially equal to the etching depth H1 of pressure chamber, because pseudo-chamber and pressure chamber have all experienced wet etching twice.

In addition, the formation of the separator of ink jet-print head makes the thickness of the silicon substrate between pressure chamber 6 and the pseudo-chamber 26 more than or equal to 100 μ m, and the height of pressure chamber 6 (degree of depth of recess 146a) is more than or equal to 85 μ m.Thereby the thickness by making the silicon substrate between pressure chamber 6 and the pseudo-chamber 26 is more than or equal to 100 μ m, single is injected and repeatedly inject between the drop speeds balance, therefore controlled ink drippage position accurately.In addition, the height by making pressure chamber 6 is more than or equal to 85 μ m, even utilize high viscosity liquid also can supply ink fully under high venting frequency under the situation of print high quality images on the common paper.

Then, illustrate according to print cartridge of the present invention with reference to Figure 53.Figure 53 illustrates the perspective view of the all-in-one-piece print cartridge of black case.Print cartridge 200 according to the present invention comprises and the ink jet-print head 202 incorporate black casees 203 of conduct according to drop discharge head of the present invention.Ink jet-print head 202 can be a kind of in the ink jet-print head (having nozzle bore 201) according to previous embodiment.China ink case 203 is to ink jet-print head 202 ink supply.

In the situation of so all-in-one-piece print cartridge of black case, the reliability of ink jet-print head directly influences the reliability of whole print cartridge.Because ink jet-print head according to the present invention has the ability that does not go wrong with high stability discharging ink droplet, as already discussed, can improve the reliability and the output of print cartridge.

Then, the embodiment of the ink-jet printing device of ink jet-print head (comprising black case) is equipped with according to previous embodiment with reference to Figure 54,55 explanations.Figure 54 illustrates the perspective view of ink-jet printing device.Figure 55 illustrates the summary side elevation of the mechanical part of ink-jet printing device.

Ink-jet printing device comprises main body 211.Main body 211 is contained in transportable print cartridge 223 on the main scanning direction, be installed on the print cartridge 223 according to ink jet-print head of the present invention, comprise the printing mechanism 212 that is used for to the print cartridge 225 of ink jet-print head ink supply, or the like.Paper feeding box 214 (paper feeding plate) is detachably connected to the bottom of main body 211, and plurality of sheets of paper is opened 213 and can be loaded on the paper feeding box 214 from the front side.Manual paper feeding plate 215 is suspended on the twisted wire.After printed image formed by means of printing mechanism 212, the paper of sending into from paper feeding box 214 or manual paper feeding plate 215 sprang into paper discharge tray 216 by main body 211 back sides.

Printing mechanism 212 remains on the main scanning position by main guide rod 221 and secondary guide rod 222 slidably with print cartridge 223.Main guide rod 221 and secondary guide rod 222 extend laterally to the both sides of main body 211.The ink jet-print head 224 that sprays yellow (Y), cyan (C), magenta (M) and the colored ink droplet of black (B) according to the present invention is installed on the print cartridge 223, thereby arranges nozzle bore and main scanning direction lateral cross and sensing downward direction more.Each is used to provide the print cartridge 225 of various color inks to be installed in print cartridge 223, can change.Should be noted that the all-in-one-piece print cartridge of aforesaid black case can be installed on the print cartridge 223.

The opening (not shown) that is communicated with atmosphere is formed on print cartridge 225 upsides, and the inlet port (not shown) is formed on print cartridge 225 downsides, and the ink that enters the mouth is fed on the ink jet-print head 224 from inlet port.Porous member is arranged on print cartridge 225 inside.Print cartridge 225 remains on negative pressure by the ink that the capillarity of porous member will supply to ink jet-print head in advance.

Although be provided with a plurality of ink jet-print heads 224, have only a ink jet-print head that is used to discharge the shades of colour ink also applicable with nozzle according to the ink color among this embodiment.

The back of print cartridge 223 (rear portion in the sheet transport direction) is assemblied on the main guide bar 221 slidably, and anterior (front portion in the sheet transport direction) is placed on the secondary guide rod 222 slidably.The timing tape 230 of advancing around drive 228 and driven pulley 229 is fixed on the print cartridge 223.Main motor 227 causes moving back and forth of print cartridge 223 in vertical direction and rotation transversely.

Be provided with intake roller 231 and friction pad 213 with the paper 213 in the independent transmission paper feeding box 214.Be provided with the transfer roller 234 that is used to guide first guiding piece 233 of paper 213 and is used for after with paper 213 upsets, transmitting paper 213.In addition, arranged a roller 235 that presses transfer roller 234 peripheries.Be provided with one and be used to limit the roller 236 that paper 213 is sent into the angle.Secondary motor 237 drives transfer roller 234 via gear train.

Second guiding piece 239 is arranged on below the ink jet-print head 224 with respect to the moving range of print cartridge 223 on main scanning direction.The paper that the transfer roller 234 of second guiding piece, 239 guiding below being positioned at ink jet-print head 224 transmits.Roller 241,242 is arranged on second guiding piece, 239 rear sides on the paper conveyance direction.In addition, also be provided with the 3rd guiding piece 245,246 that is used for that paper 213 sent into the outlet roller 243,244 of paper discharge tray 216 and limits paper 213 outgoing routes.

In printing, the driving signal when ink jet-print head 224 moves according to print cartridge 223 is activated.At this moment, ink jet-print head 224 is discharged ink droplet, forms the delegation of image on the paper of ending 213.Equally, when paper has advanced a preset distance in the step-by-step movement mode, the next line of print image.The indication printing stops or indicates that the signal of paper rear end by print area causes the termination of printing and the output of the paper that is printed.In this printing, guaranteed the high-quality of printed image with high stability, because ink jet-print head 224 according to the present invention can discharge ink droplet with high efficiency.

Shown in Figure 54, means for correcting (recovery apparatus) 247 outwards is arranged on the moving area right side of print cartridge 223.Can proofread and correct (recovery) venting fault by using this means for correcting 247.For this purpose, this means for correcting 247 is provided with cap spare, vacuum plant and cleaning device.Print cartridge 223 moves towards means for correcting 247, thereby ink jet-print head 224 is coated with cap spare under stand-by state.This just keeps the ink output part (that is, nozzle bore) of ink jet-print head 224 to be under the dampness, thereby prevents because the venting fault that the ink that becomes dry causes.In addition, in order to keep stable venting performance, be not used in the ink droplet of printing, keep ink viscosity constant on the whole ink output part of ink jet-print head 224 by discharging.

Occurring under the situation of trouble as the venting fault, the ink output part of ink jet-print head 224 (that is, nozzle bore) is surrounded by cap spare, thereby bubble and ink upwards pass through tube emptying under the help of vacuum plant.Ink that gathers along the ink output part surface and particle utilize cleaning device to remove.Like this, means for correcting 247 recovers from trouble (as the venting fault).In addition, the ink transport that is drained is to ink removing trap (not shown), and the blotting material in this position ink removing trap absorbs and retains removed ink.

In this way, ink-jet printing device can be carried out stable venting operation with the reliability of height in long-term operation, and utilizes according to ink jet-print head of the present invention (comprising the all-in-one-piece print cartridge of black case) and improve picture quality.

In addition, the present invention is not limited to these embodiment, can carry out various changes and modifications without departing from the scope of the invention.

For example, explanation of the present invention relates to is ink jet-print head as drop discharge head, and still, the present invention is equally applicable to discharge the drop discharge head of drop except ink droplet (as the resist drop and be used for the drop of DNA analysis).In addition, explanation of the present invention relates to piezoelectric ink jet head, and still, the present invention is equally applicable to thermal type ink jet-print head and electrostatic ink jet-print head.

In addition, be used to make the foregoing example combination in every way of the technology of separator.For example, be used for making surface roughness (Ra) can add any example of technology to less than the special process of 2 μ m.

Claims (13)

1. drop discharge head comprises:

The groove forming element, it is made by silicon substrate and wherein is formed with pressure chamber and nozzle connectivity slot; With

Nozzle plate, it is arranged on the side of groove forming element and has nozzle via nozzle connectivity slot and pressure chamber's fluid connection;

Wherein the nozzle connectivity slot has four turnings in groove forming element inboard, and nozzle connectivity slot its exit on the nozzle plate side has turning, six obtuse angles.

2. drop discharge head as claimed in claim 1, wherein in groove forming element inside, four sides of nozzle connectivity slot are subjected to being substantially perpendicular to the restriction on four surfaces of nozzle plate, and on the nozzle plate side, four sides of nozzle connectivity slot are subjected to described four surfaces and the restriction of two additional surfaces tilting with respect to nozzle plate.

3. drop discharge head as claimed in claim 2 also comprises:

Barrier film, it is arranged on the opposite side of groove forming element, and constitutes pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber,

Wherein on the barrier film side, three sides of pressure chamber are subjected to being basically perpendicular to the restriction on the surface that three surfaces and of barrier film tilt with respect to barrier film.

4. drop discharge head as claimed in claim 3,

Wherein three surfaces in described four surfaces of described three sides of pressure chamber and nozzle connectivity slot are connected continuously.

5. drop discharge head as claimed in claim 3,

Wherein pressure chamber's opening shape on the barrier film side near nozzle connectivity slot lower zone is limited by four lines that connect with the obtuse angle.

6. drop discharge head comprises:

Groove forms element, and it is made by silicon substrate and has pressure chamber, nozzle connectivity slot and a secondary cavity that is formed on wherein;

Nozzle plate, it is arranged on the side of groove forming element, constitutes secondary cavity together with the groove forming element, and has the nozzle via secondary cavity and nozzle connectivity slot and pressure chamber's fluid connection; And

Barrier film, it is arranged on the opposite side of groove forming element, and constitutes pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber;

Wherein the nozzle connectivity slot has four turnings, and near the opening shape of the secondary cavity nozzle limits by four lines that connect with the obtuse angle.

7. drop discharge head as claimed in claim 6,

Wherein limit by four lines that connect with the obtuse angle at opening shape near the pressure chamber on the nozzle connectivity slot lower zone septation side.

8. drop discharge head as claimed in claim 6,

Wherein near the nozzle plate side the nozzle, three sides of secondary cavity are limited by three surfaces that are substantially perpendicular to nozzle plate and an additional surface that tilts with respect to nozzle plate.

9. drop discharge head as claimed in claim 6,

Wherein near the barrier film side in the zone below the nozzle connectivity slot, three sides of pressure chamber are limited by three surfaces that are substantially perpendicular to nozzle plate and an additional surface that tilts with respect to nozzle plate.

10. drop discharge head comprises:

The groove forming element, it is made by silicon substrate and wherein is formed with pressure chamber and nozzle connectivity slot; With

Nozzle plate, it is arranged on the side of groove forming element and has nozzle via nozzle connectivity slot and pressure chamber's fluid connection;

Wherein in groove forming element inside, four sides of nozzle connectivity slot are subjected to being substantially perpendicular to the restriction on four surfaces of nozzle plate, and on the nozzle plate side, described four sides of nozzle connectivity slot are subjected to described four surfaces and the restriction of two additional surfaces tilting with respect to nozzle plate.

11. a drop discharge head comprises:

The groove forming element, it is made by silicon substrate and wherein is formed with pressure chamber, nozzle connectivity slot and secondary cavity;

Nozzle plate, it is arranged on the side of groove forming element, constitutes secondary cavity together with the groove forming element, and has the nozzle via secondary cavity and nozzle connectivity slot and pressure chamber's fluid connection; And

Barrier film, it is arranged on the opposite side of groove forming element, and constitutes pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber,

Wherein the nozzle connectivity slot has four turnings, and is limited by four lines that connect with the obtuse angle at the opening shape near the pressure chamber on the nozzle connectivity slot lower zone septation side.

12. a drop discharge head comprises:

The groove forming element, it is made by silicon substrate and wherein is formed with pressure chamber, nozzle connectivity slot and secondary cavity;

Nozzle plate, it is arranged on the side of groove forming element, constitutes secondary cavity together with the groove forming element, and has the nozzle via secondary cavity and nozzle connectivity slot and pressure chamber's fluid connection; And

Barrier film, it is arranged on the opposite side of groove forming element, and constitutes pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber,

Wherein near the nozzle plate side the nozzle, three sides of secondary cavity are limited by three surfaces that are substantially perpendicular to nozzle plate and an additional surface that tilts with respect to nozzle plate.

13. a drop discharge head comprises:

The groove forming element, it is made by silicon substrate and wherein is formed with pressure chamber, nozzle connectivity slot and secondary cavity;

Nozzle plate, it is arranged on the side of groove forming element, constitutes secondary cavity together with the groove forming element, and has the nozzle via secondary cavity and nozzle connectivity slot and pressure chamber's fluid connection; And

Barrier film, it is arranged on the opposite side of groove forming element, and constitutes pressure chamber together with the groove forming element, thereby and can be out of shape the volume that changes pressure chamber,

Wherein near the barrier film side in the zone below the nozzle connectivity slot, three sides of pressure chamber are limited by three surfaces that are substantially perpendicular to nozzle plate and an additional surface that tilts with respect to nozzle plate.

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