CN101283110A - Material mixture, sputter target, method for the production thereof and used of the material mixture - Google Patents

Material mixture, sputter target, method for the production thereof and used of the material mixture Download PDF

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Publication number
CN101283110A
CN101283110A CNA2006800376244A CN200680037624A CN101283110A CN 101283110 A CN101283110 A CN 101283110A CN A2006800376244 A CNA2006800376244 A CN A2006800376244A CN 200680037624 A CN200680037624 A CN 200680037624A CN 101283110 A CN101283110 A CN 101283110A
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CN
China
Prior art keywords
material blends
tio
sputtering target
powder
material mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006800376244A
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Chinese (zh)
Inventor
马库斯·舒尔特海斯
马丁·魏格特
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WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of CN101283110A publication Critical patent/CN101283110A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

The invention relates to a material mixture containing, as a main constituent, a cobalt-based alloy, characterized in that it also at least contains TiOx.

Description

The preparation method of material blends, sputtering target, this sputtering target and the purposes of this material blends
The present invention relates to contain the preparation method of cobalt base alloy as material blends, sputtering target and this sputtering target of main component.
Containing cobalt base alloy can learn from (for example) patent documentation US 6,759,005 or patent documentation DE 195 08 535 A1 as the material blends of main component.Wherein, these material blends are used to form thin layer as magnetic functional layer (thin layer in the magnetic data memory technology); Perhaps these material blends form these layers respectively.Since require these layers to have heavy body, therefore, more and more higher to the requirement of the material of these layers; And then also more and more higher to the requirement of the sputtering target that is used for preparing these layers, this is because these layers preferably prepare by sputter.
The present invention is based on magnetic properties this purpose of improving the known materials mixture.
Above-mentioned purpose is resolved by independent claim.Obtain advantageous embodiment by dependent claims.At least also contain TiO xMagnetic properties as the cobalt base alloy (cobalt base alloy is as main component, that is, its weight percent is greater than 50%) of submember significantly improves, so it is suitable for the magnetic data storage more as thin layer.Preferably this material deposition is become thin layer by sputtering technology.Is that the pulverulence of 0.1 μ m to 50 μ m exists by making (substoichiometric) electroconductibility titanium oxide after subtracting oxygen and handling with particle diameter, can make sputter material obtain excellent especially homogeneity when sputtering target deposits on the base material.Described TiO xIn x be preferably 1.5 to 1.998.
Preferably, described material blends or form by oxide powder and cobalt base alloy metal-powder by the sputtering target that this material blends is made.The density of sputtering target be preferably its material theoretical density at least 95%.Prepare sputtering target by this way: with Co-based alloy powder and TiO xPowder mixes, and this powdered mixture carried out hot pressing.At this advantageously, this powdered mixture is carried out hot axial pressing or hot isostatic pressing.Can obtain the high storage media of capacity by material blends of the present invention.TiO in this material blends xPercentage composition preferably is 15 moles of % to the maximum.It all is very difficult or even impossible preparing the metallurgical melt of these material blends or the metallurgical melt of corresponding sputtering target, and this is because TiO xPottery can not fuse with cobalt base alloy.In general, with TiO xParticle is blended in the cobalt base alloy melt in churned mechanically mode can not form uniform material.Method for preparing powder metallurgy also has problem, this be because: on the one hand, there is the mixed problem between metallic particles and the ceramic particle in this method; On the other hand, also there is the technical problem of sputter aspect in this method, and this is because if the electric insulation ceramics particle is present in the sputtering target, then can cause breaking down in sputter procedure.Unexpectedly, these problems also are resolved by the present invention.
The present invention will be described below by exemplary embodiment.
In cylindrical blender, with the inert gas atom ized powder of 880g cochrome (parts by weight of chromium are 12 weight %) and 120g through pretreated TiO xPowder mixes 24 hours.Also can prepare said mixture, for example, use ball mill or drum mixer to be prepared by other standard blending means.By being to carry out vacuum annealing under about 1, the 400 ℃ reducing atmosphere to come in temperature to TiO xPowder carries out pre-treatment.By subtracting oxygen annealing with TiO xThe oxygen level of powder reduces about 2 weight % (comparing with stoichiometric oxygen level).Using mesh size subsequently is TiO after the screen cloth of 50 μ m will reduce xPowder sieves.In cylindrical blender, particle diameter is lower than the TiO of 50 μ m xPowder and cochrome powder uniform mixing 24 hours.Subsequently, will be by the TiO of cochrome and 9 moles of % xThe gained mixture that constitutes is filled in the hot pressing die, and in vacuum press under 1,100 ℃ the forming pressure with 30MPa suppress.By above-mentioned materials mixture (CoCr12 TiO x) relative density of the corresponding hot pressing sputtering target made is 98.0% of theoretical density.The sample preparation of metallographic section shows, electroconductibility TiO xParticle is evenly distributed in the cobalt-base alloy matrix very much.
Another embodiment is Co/Pt (18 atom %)/Cr (10 atom the %)/TiO with the similar approach preparation x(8 moles of %).

Claims (10)

1. material blends that contains cobalt base alloy as main component, it is characterized in that: this material blends at least also contains TiO x
2. according to the material blends of claim 1, it is characterized in that: at the TiO that described material blends comprised xIn, x＜2.
3. according to the material blends of claim 2, it is characterized in that: at the TiO that described material blends comprised xIn, 1.5＜x＜1.998.
4. according to material blends any in the claim 1 to 3, it is characterized in that: TiO xWith particle diameter is that the particle form of 0.1 μ m to 50 μ m is included in the described material blends.
5. according to material blends any in the claim 1 to 4, it is characterized in that: described material blends is to be formed by the mixture that metal-powder and oxide powder constitute.
6. sputtering target, it is by forming according to material blends any in the claim 1 to 5.
7. according to the sputtering target of claim 6, it is characterized in that: the density of described sputtering target is at least 95% of theoretical density.
8. a method for preparing according to the sputtering target of claim 6 or 7 is characterized in that: with Co-based alloy powder and TiO xPowder mixes, and the powdered mixture of gained carried out hot pressing.
9. method according to Claim 8 is characterized in that: described powdered mixture is carried out hot axial pressing or hot isostatic pressing.
10. according to the purposes of material blends any in the claim 1 to 5 as sputtering target.
CNA2006800376244A 2005-10-12 2006-10-10 Material mixture, sputter target, method for the production thereof and used of the material mixture Pending CN101283110A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005049328A DE102005049328B4 (en) 2005-10-12 2005-10-12 Material mixture, sputtering target, process for its preparation and use of the material mixture
DE102005049328.9 2005-10-12

Publications (1)

Publication Number Publication Date
CN101283110A true CN101283110A (en) 2008-10-08

Family

ID=37814474

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006800376244A Pending CN101283110A (en) 2005-10-12 2006-10-10 Material mixture, sputter target, method for the production thereof and used of the material mixture

Country Status (7)

Country Link
US (1) US20080187453A1 (en)
JP (1) JP2009511741A (en)
KR (1) KR20080058333A (en)
CN (1) CN101283110A (en)
DE (1) DE102005049328B4 (en)
TW (1) TW200724696A (en)
WO (1) WO2007042255A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009031302A1 (en) 2009-06-30 2011-01-05 O-Flexx Technologies Gmbh Process for the production of thermoelectric layers
JP5888664B2 (en) * 2010-12-20 2016-03-22 Ｊｘ金属株式会社 Ferromagnetic sputtering target
CN106868347B (en) * 2017-03-13 2018-06-15 北京科技大学 A kind of Co-Fe B alloy wires with high mangneto twisting property and preparation method thereof
US11274363B2 (en) * 2019-04-22 2022-03-15 Nxp Usa, Inc. Method of forming a sputtering target

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950604B2 (en) * 1981-11-27 1984-12-10 三菱マテリアル株式会社 Manufacturing method of titanium oxide powder
EP0535314A1 (en) * 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
DE19508535A1 (en) * 1995-03-10 1996-09-12 Leybold Materials Gmbh Magnetron cathodic sputtering target
JP4004675B2 (en) * 1999-01-29 2007-11-07 株式会社日清製粉グループ本社 Method for producing oxide-coated metal fine particles
JP2001236643A (en) * 2000-02-23 2001-08-31 Fuji Electric Co Ltd Sputtering target for manufacturing magnetic recording medium, method of manufacturing magnetic recording medium by using the same, and magnetic recording medium
JP2005529239A (en) * 2002-06-07 2005-09-29 ヘラエウス インコーポレーテッド Process for producing processing-compliant intermetallic compound sputtering target
US6759005B2 (en) * 2002-07-23 2004-07-06 Heraeus, Inc. Fabrication of B/C/N/O/Si doped sputtering targets

Also Published As

Publication number Publication date
KR20080058333A (en) 2008-06-25
TW200724696A (en) 2007-07-01
WO2007042255A1 (en) 2007-04-19
DE102005049328A1 (en) 2007-04-19
DE102005049328B4 (en) 2007-07-26
JP2009511741A (en) 2009-03-19
US20080187453A1 (en) 2008-08-07

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