CN101283110A - Material mixture, sputter target, method for the production thereof and used of the material mixture - Google Patents
Material mixture, sputter target, method for the production thereof and used of the material mixture Download PDFInfo
- Publication number
- CN101283110A CN101283110A CNA2006800376244A CN200680037624A CN101283110A CN 101283110 A CN101283110 A CN 101283110A CN A2006800376244 A CNA2006800376244 A CN A2006800376244A CN 200680037624 A CN200680037624 A CN 200680037624A CN 101283110 A CN101283110 A CN 101283110A
- Authority
- CN
- China
- Prior art keywords
- material blends
- tio
- sputtering target
- powder
- material mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
- C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
- C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
The invention relates to a material mixture containing, as a main constituent, a cobalt-based alloy, characterized in that it also at least contains TiOx.
Description
The present invention relates to contain the preparation method of cobalt base alloy as material blends, sputtering target and this sputtering target of main component.
Containing cobalt base alloy can learn from (for example) patent documentation US 6,759,005 or patent documentation DE 195 08 535 A1 as the material blends of main component.Wherein, these material blends are used to form thin layer as magnetic functional layer (thin layer in the magnetic data memory technology); Perhaps these material blends form these layers respectively.Since require these layers to have heavy body, therefore, more and more higher to the requirement of the material of these layers; And then also more and more higher to the requirement of the sputtering target that is used for preparing these layers, this is because these layers preferably prepare by sputter.
The present invention is based on magnetic properties this purpose of improving the known materials mixture.
Above-mentioned purpose is resolved by independent claim.Obtain advantageous embodiment by dependent claims.At least also contain TiO
xMagnetic properties as the cobalt base alloy (cobalt base alloy is as main component, that is, its weight percent is greater than 50%) of submember significantly improves, so it is suitable for the magnetic data storage more as thin layer.Preferably this material deposition is become thin layer by sputtering technology.Is that the pulverulence of 0.1 μ m to 50 μ m exists by making (substoichiometric) electroconductibility titanium oxide after subtracting oxygen and handling with particle diameter, can make sputter material obtain excellent especially homogeneity when sputtering target deposits on the base material.Described TiO
xIn x be preferably 1.5 to 1.998.
Preferably, described material blends or form by oxide powder and cobalt base alloy metal-powder by the sputtering target that this material blends is made.The density of sputtering target be preferably its material theoretical density at least 95%.Prepare sputtering target by this way: with Co-based alloy powder and TiO
xPowder mixes, and this powdered mixture carried out hot pressing.At this advantageously, this powdered mixture is carried out hot axial pressing or hot isostatic pressing.Can obtain the high storage media of capacity by material blends of the present invention.TiO in this material blends
xPercentage composition preferably is 15 moles of % to the maximum.It all is very difficult or even impossible preparing the metallurgical melt of these material blends or the metallurgical melt of corresponding sputtering target, and this is because TiO
xPottery can not fuse with cobalt base alloy.In general, with TiO
xParticle is blended in the cobalt base alloy melt in churned mechanically mode can not form uniform material.Method for preparing powder metallurgy also has problem, this be because: on the one hand, there is the mixed problem between metallic particles and the ceramic particle in this method; On the other hand, also there is the technical problem of sputter aspect in this method, and this is because if the electric insulation ceramics particle is present in the sputtering target, then can cause breaking down in sputter procedure.Unexpectedly, these problems also are resolved by the present invention.
The present invention will be described below by exemplary embodiment.
In cylindrical blender, with the inert gas atom ized powder of 880g cochrome (parts by weight of chromium are 12 weight %) and 120g through pretreated TiO
xPowder mixes 24 hours.Also can prepare said mixture, for example, use ball mill or drum mixer to be prepared by other standard blending means.By being to carry out vacuum annealing under about 1, the 400 ℃ reducing atmosphere to come in temperature to TiO
xPowder carries out pre-treatment.By subtracting oxygen annealing with TiO
xThe oxygen level of powder reduces about 2 weight % (comparing with stoichiometric oxygen level).Using mesh size subsequently is TiO after the screen cloth of 50 μ m will reduce
xPowder sieves.In cylindrical blender, particle diameter is lower than the TiO of 50 μ m
xPowder and cochrome powder uniform mixing 24 hours.Subsequently, will be by the TiO of cochrome and 9 moles of %
xThe gained mixture that constitutes is filled in the hot pressing die, and in vacuum press under 1,100 ℃ the forming pressure with 30MPa suppress.By above-mentioned materials mixture (CoCr12 TiO
x) relative density of the corresponding hot pressing sputtering target made is 98.0% of theoretical density.The sample preparation of metallographic section shows, electroconductibility TiO
xParticle is evenly distributed in the cobalt-base alloy matrix very much.
Another embodiment is Co/Pt (18 atom %)/Cr (10 atom the %)/TiO with the similar approach preparation
x(8 moles of %).
Claims (10)
1. material blends that contains cobalt base alloy as main component, it is characterized in that: this material blends at least also contains TiO
x
2. according to the material blends of claim 1, it is characterized in that: at the TiO that described material blends comprised
xIn, x<2.
3. according to the material blends of claim 2, it is characterized in that: at the TiO that described material blends comprised
xIn, 1.5<x<1.998.
4. according to material blends any in the claim 1 to 3, it is characterized in that: TiO
xWith particle diameter is that the particle form of 0.1 μ m to 50 μ m is included in the described material blends.
5. according to material blends any in the claim 1 to 4, it is characterized in that: described material blends is to be formed by the mixture that metal-powder and oxide powder constitute.
6. sputtering target, it is by forming according to material blends any in the claim 1 to 5.
7. according to the sputtering target of claim 6, it is characterized in that: the density of described sputtering target is at least 95% of theoretical density.
8. a method for preparing according to the sputtering target of claim 6 or 7 is characterized in that: with Co-based alloy powder and TiO
xPowder mixes, and the powdered mixture of gained carried out hot pressing.
9. method according to Claim 8 is characterized in that: described powdered mixture is carried out hot axial pressing or hot isostatic pressing.
10. according to the purposes of material blends any in the claim 1 to 5 as sputtering target.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005049328A DE102005049328B4 (en) | 2005-10-12 | 2005-10-12 | Material mixture, sputtering target, process for its preparation and use of the material mixture |
DE102005049328.9 | 2005-10-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101283110A true CN101283110A (en) | 2008-10-08 |
Family
ID=37814474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006800376244A Pending CN101283110A (en) | 2005-10-12 | 2006-10-10 | Material mixture, sputter target, method for the production thereof and used of the material mixture |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080187453A1 (en) |
JP (1) | JP2009511741A (en) |
KR (1) | KR20080058333A (en) |
CN (1) | CN101283110A (en) |
DE (1) | DE102005049328B4 (en) |
TW (1) | TW200724696A (en) |
WO (1) | WO2007042255A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009031302A1 (en) | 2009-06-30 | 2011-01-05 | O-Flexx Technologies Gmbh | Process for the production of thermoelectric layers |
JP5888664B2 (en) * | 2010-12-20 | 2016-03-22 | Jx金属株式会社 | Ferromagnetic sputtering target |
CN106868347B (en) * | 2017-03-13 | 2018-06-15 | 北京科技大学 | A kind of Co-Fe B alloy wires with high mangneto twisting property and preparation method thereof |
US11274363B2 (en) * | 2019-04-22 | 2022-03-15 | Nxp Usa, Inc. | Method of forming a sputtering target |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950604B2 (en) * | 1981-11-27 | 1984-12-10 | 三菱マテリアル株式会社 | Manufacturing method of titanium oxide powder |
EP0535314A1 (en) * | 1991-08-30 | 1993-04-07 | Mitsubishi Materials Corporation | Platinum-cobalt alloy sputtering target and method for manufacturing same |
DE19508535A1 (en) * | 1995-03-10 | 1996-09-12 | Leybold Materials Gmbh | Magnetron cathodic sputtering target |
JP4004675B2 (en) * | 1999-01-29 | 2007-11-07 | 株式会社日清製粉グループ本社 | Method for producing oxide-coated metal fine particles |
JP2001236643A (en) * | 2000-02-23 | 2001-08-31 | Fuji Electric Co Ltd | Sputtering target for manufacturing magnetic recording medium, method of manufacturing magnetic recording medium by using the same, and magnetic recording medium |
JP2005529239A (en) * | 2002-06-07 | 2005-09-29 | ヘラエウス インコーポレーテッド | Process for producing processing-compliant intermetallic compound sputtering target |
US6759005B2 (en) * | 2002-07-23 | 2004-07-06 | Heraeus, Inc. | Fabrication of B/C/N/O/Si doped sputtering targets |
-
2005
- 2005-10-12 DE DE102005049328A patent/DE102005049328B4/en not_active Expired - Fee Related
-
2006
- 2006-10-10 JP JP2008534918A patent/JP2009511741A/en active Pending
- 2006-10-10 CN CNA2006800376244A patent/CN101283110A/en active Pending
- 2006-10-10 KR KR1020087005665A patent/KR20080058333A/en not_active Application Discontinuation
- 2006-10-10 WO PCT/EP2006/009766 patent/WO2007042255A1/en active Application Filing
-
2007
- 2007-03-08 TW TW095137558A patent/TW200724696A/en unknown
-
2008
- 2008-04-11 US US12/101,544 patent/US20080187453A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20080058333A (en) | 2008-06-25 |
TW200724696A (en) | 2007-07-01 |
WO2007042255A1 (en) | 2007-04-19 |
DE102005049328A1 (en) | 2007-04-19 |
DE102005049328B4 (en) | 2007-07-26 |
JP2009511741A (en) | 2009-03-19 |
US20080187453A1 (en) | 2008-08-07 |
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C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |