CN101275979A - Cylindrical high Q resonant cavity for microwave test under high temperature - Google Patents
Cylindrical high Q resonant cavity for microwave test under high temperature Download PDFInfo
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- CN101275979A CN101275979A CNA2007100503477A CN200710050347A CN101275979A CN 101275979 A CN101275979 A CN 101275979A CN A2007100503477 A CNA2007100503477 A CN A2007100503477A CN 200710050347 A CN200710050347 A CN 200710050347A CN 101275979 A CN101275979 A CN 101275979A
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Abstract
A cylindrical high-Q resonant cavity for high-temperature microwave test belongs to the field of the microwave test technique. The cylindrical high-Q resonant cavity comprises a cylindrical barrel, an upper end cap, a lower end cap and a connecting waveguide. The cylindrical barrel, the upper end cap and the lower end cap are equally divided into an inner layer and an external layer. The inner layer is a thin fire resistant noble metal material. The external layer is a thick fire resistant supporting material. The substance is that the thin fire resistant noble metal material is adopted for making the cavity of the cylindrical high-Q resonant cavity, and the fire resistant material is adopted for supporting the thin fire resistant noble metal material to form a cylindrical high-Q resonant cavity. The whole cylindrical high-Q resonant cavity has the characteristics of suitability for test high-temperature behavior of microwave and millimeter wave dielectric material, simple structure, low cost and long service lifetime.
Description
Technical field
A kind of cylindrical high Q resonant cavity that is used for microwave test under high temperature belongs to the microwave testing field, particularly the complex permittivity measuring technology of microwave dielectric.
Background technology
The application of microwave dielectric material in microwave device, microwave system is very extensive, in development and use to these microwave dielectric materials, need be that complex permittivity is measured accurately to its electrical quantity.
When microwave dielectric was low-loss material, the method that adopts was a Resonant-cavity Method usually.Used resonator cavity can be stripline resonator, cylindrical cavity, rectangular cavity, quasi optical cavity, helix resonator cavity etc.For requiring the electric field polarization direction to be parallel to the test of the complex permittivity of microwave dielectric sample surfaces, often adopt cylindrical cavity, higher because of its Q value, and used tested microwave dielectric sample size is less.The cylindrical cavity method is higher because of its quality factor q, is called high-q cavity again.
When adopting the high-q cavity method to carry out the microwave dielectric complex permittivity test, two kinds of method of testings are arranged, a kind of is the fixed resonant frequency method, and another is the lock chamber regular way.In the fixed resonant frequency method, the resonance frequency of cavity is a fixed value loading microwave dielectric sample front and back, calculates complex permittivity by the variation that loads microwave dielectric sample front and back cavity length and quality factor.In the lock chamber regular way, then the length of fixed cavity is calculated complex permittivity by the variation that loads microwave dielectric sample front and back resonance frequency and quality factor.
Utilize high-q cavity to adopt fixed resonant frequency method and lock chamber regular way to carry out the test of complex permittivity respectively in the document " Eric J.Vanzura; William A.Kissick.Advances in NIST dielectric measurementcapability using a mode-filtered cylindrical cavity.IEEE MTT-S Digest; 1989, p901-904 ".The structural representation of used high-q cavity as shown in Figure 1, it is made of cylindrical cavity tube, upper end cover and position-movable bottom end cover, wherein has the waveguide-coupled hole on the upper end cover.By the position of change bottom end cover in cylinder die cavity tube, thus the length of change cavity.Utilize a plurality of TE in the literary composition
01nMode of operation adopts fixed frequency method or lock chamber regular way to measure the complex permittivity response on the broadband discrete point in frequency in X-band 8.2～12.4GHz of tested microwave dielectric sample.
Expansion along with microwave, millimeter wave dielectric substance range of application, people more and more need to understand microwave, the dielectric properties of millimeter wave dielectric substance under high temperature (being higher than 1000 ℃), and this can test microwave, millimeter wave dielectric substance dielectric properties at high temperature with regard to requiring us.Introduced Russian high-temperature dielectric ability meter in the document " what little watt, the employing Resonant-cavity Method makes clear of the high-temperature dielectric performance of wave material, infrared and millimeter wave journal, 2004, Vol.23, No.2, p157～160. for Li Yi, Li Jianbao ".The cavity that is adopted is a cylindrical cavity, and mode of operation is TE
01nPattern, probe temperature are 15～1200 ℃, and frequency of operation is 9～10GHz, adopt the nitrogen atmosphere protection.During test, the method for employing is promptly carried out the measurement of complex permittivity for becoming the chamber regular way by the variation of high temperature lower chamber length and Q-unloaded.This method need at high temperature change the position of resonator cavity bottom end cover in the tube of chamber and measure the proving installation complexity.And the measuring accuracy that cavity length changes can have a strong impact on the measuring accuracy of specific inductive capacity.
Document " Zhang G; Nakaoka S; Kobayashi Y; Millimeter wave measurements of temperaturedependence of complex permittivity of dielectric plates by the cavity resonancemethod; AMPC; 1997, p3913～3916 "; " Kobayashi Y, Shimizu T, Millimeter wave measurementdependence of complex permittivity of dielectric plates by a cavity resonance method, IEEE MTT-S, 1999, p1885～1888 "; " Shimizu T, Kobayashi Y, Millimeter wave measurementsof temperature dependence of complex permittivity of GaAs disks by circular waveguidemethod, IEEE MTT-S, 2001, p2195～2198 " the middle employing with long half the place's incision of cylindrical cavity cavity in the chamber; sample is placed on the temperature variation testing that the middle method of two and half cavitys is carried out complex permittivity; probe temperature only is 100 ℃, and proving installation is comparatively complicated.
In sum, abroad studied for many years, adopted cylindrical cavity fixed frequency point to change the chamber regular way usually or adopt sample is placed on the high temperature test that the middle method of two and half cavitys is carried out the low-loss material complex permittivity at low-loss material complex permittivity high temperature test technical elements.These proving installations are complicated, measuring accuracy is low, are difficult to the test present situation requirement of the higher temperature of adaptation low-loss material complex permittivity.
Summary of the invention
The invention provides a kind of lock chamber high temperature microwave test factory, simple in structure cylindrical high Q resonant cavity, be applicable to the test of microwave, millimeter wave dielectric material high temperature performance.
Detailed technology scheme of the present invention is:
A kind of cylindrical high Q resonant cavity that is used for microwave test under high temperature, as shown in Figure 2, comprise cylinder die cavity tube 1, upper end cover 2, bottom end cover 3 and be connected waveguide 4, bottom end cover 3 is fixedlyed connected with the lower end of cylinder die cavity tube 1, and upper end cover 2 is connected by coupling bolt 5 with the upper end of cylinder die cavity tube 1.Wherein cylinder die cavity tube 1 is made up of chamber tube outer 11 and chamber tube internal layer 12, upper end cover 2 is made up of upper end cover outer 21 and upper end cover internal layer 22, bottom end cover 3 is made up of bottom end cover outer 31 and bottom end cover internal layer 32, connects waveguide 4 and is connected in sequence by high temperature waveguide 41, heat insulation waveguide 42 and cooling waveguide 43.Described chamber tube skin 11, upper end cover outer 21 and bottom end cover skin 31 are made by the high temperature resistant propping material of thick-layer, and described chamber tube internal layer 12, upper end cover internal layer 22 and bottom end cover internal layer 32 are made by the high temperature resistant precious metal material of thin layer; Described chamber tube internal layer 12, upper end cover internal layer 22 and bottom end cover internal layer 32 are close to chamber tube skin 11, upper end cover outer 21 and bottom end cover skin 31 respectively.Have 23, two of two coupling apertures connects waveguide 4 and embeds outer 21 propping materials of upper end cover of upper end cover 2 respectively and fixedly connected with the upper end cover internal layer 22 at corresponding coupling aperture 23 places in upper end cover 2 appropriate locations.
In the such scheme, the high temperature resistant propping material of described thick-layer should be that heat conductivility is good and be easy to material processed, can adopt graphite, the high temperature resistant precious metal material of described thin layer should be that fusing point is higher than 1000 ℃ and have the material of excellent conductive performance, can adopt platinum-rhodium alloy.
High temperature microwave test of the present invention with cylindrical high Q resonant cavity in use, earlier tested sample 6 (as shown in Figure 5) is put on the bottom end cover of resonator cavity, with bolt with upper end cover and cylinder die cavity tube fixing after, the cylindrical high Q resonant cavity cavity is partly put into high temperature furnace, treat to test after the temperature balance in interior temperature of high Q resonant cavity and the high temperature furnace.During test, a conduct input of two coupling apertures of high Q resonant cavity coupling aperture, one as the output coupling aperture; Two connect conduct input of waveguide and connect waveguide, a conduct output connection waveguide.Input connects waveguide and links to each other with the microwave test source, output connects waveguide and links to each other with testing tool (as scalar network analyzer), the microwave test source signal enters resonator cavity through input connection waveguide, input coupling aperture, and test signal connects waveguide through output coupling aperture, output and enters testing tool.
Essence of the present invention is to adopt thin layer high temperature precious metal material to make the cavity of cylindrical high Q resonant cavity, and adopting high-temperature material to support thin layer high temperature precious metal material formation cylindrical high Q resonant cavity, utilization cylindrical cavity lock chamber regular way realizes the high temperature test of microwave, millimeter wave dielectric substance microwave property (as complex permittivity).Whole cylindrical high Q resonant cavity is applicable to test and simple in structure, with low cost, the long service life of microwave, millimeter wave dielectric material high temperature performance.
Description of drawings
The high-q cavity synoptic diagram of the existing bottom end cover position changeable of Fig. 1.
Fig. 2 stereographic map that is used for the cylindrical high Q resonant cavity of microwave test under high temperature of the present invention.
Wherein, the 1st, cylinder die cavity tube, the 2nd, upper end cover, the 3rd, bottom end cover, the 4th, connect waveguide.
Fig. 3 sectional view that is used for the cylindrical high Q resonant cavity of microwave test under high temperature of the present invention.
Wherein, the 11st, chamber tube skin, the 12nd, chamber tube internal layer, the 21st, upper end cover skin, the 22nd, upper end cover internal layer, the 23rd, coupling aperture, the 31st, bottom end cover skin, the 32nd, bottom end cover internal layer, the 41st, high temperature waveguide, the 42nd, heat insulation waveguide, the 43rd, cooling waveguide, the 5th, coupling bolt.
Fig. 4 vertical view that is used for the cylindrical high Q resonant cavity of microwave test under high temperature of the present invention.
The sectional view of the cylindrical high Q resonant cavity that is used for microwave test under high temperature behind the tested sample of Fig. 5 loading of the present invention.
Wherein, the 6th, tested sample.
Embodiment
A kind of cylindrical high Q resonant cavity that is used for microwave test under high temperature as shown in Figure 2, comprises that the upper end of cylinder die cavity tube 1, upper end connects by coupling bolt 5.Wherein cylinder die cavity tube 1 is made up of chamber tube outer 11 and chamber tube internal layer 12, upper end cover 2 is made up of upper end cover outer 21 and upper end cover internal layer 22, bottom end cover 3 is made up of bottom end cover outer 31 and bottom end cover internal layer 32, connects waveguide 4 and is connected in sequence by high temperature waveguide 41, heat insulation waveguide 42 and cooling waveguide 43.Described chamber tube skin 11, upper end cover outer 21 and bottom end cover skin 31 are made by the high temperature resistant propping material of thick-layer, and described chamber tube internal layer 12, upper end cover internal layer 22 and bottom end cover internal layer 32 are made by the high temperature resistant precious metal material of thin layer; Described chamber tube internal layer 12, upper end cover internal layer 22 and bottom end cover internal layer 32 are close to chamber tube skin 11, upper end cover outer 21 and bottom end cover skin 31 respectively.Have 23, two of two coupling apertures connects waveguide 4 and embeds outer 21 propping materials of upper end cover of upper end cover 2 respectively and fixedly connected with the upper end cover internal layer 22 at corresponding coupling aperture 23 places in upper end cover 2 appropriate locations.
In the such scheme, described thick-layer is high temperature resistant, and propping material adopts graphite, and described thin layer is high temperature resistant, and precious metal material adopts platinum-rhodium alloy.As shown in Figure 4, for increasing the connection between upper end cover 2 and the chamber tube 1,, adopt 8 coupling bolts to carry out fastening altogether to prevent microwave leakage.Bottom end cover 3 takes welding manner to fixedly connected with the lower end of cylinder die cavity tube 1, connects waveguide 4 and takes welding manner to fixedly connected with upper end cover internal layer 22; Can take welding manner fixedly connected between high temperature waveguide 41, heat insulation waveguide 42 and the cooling waveguide 43, also can take other modes to connect, but should guarantee not have microwave leakage.The cavity diameter of whole cylindrical high Q resonant cavity and cavity length can be according to test frequency scope and the selected mode of operation specific designs of high-q cavity.
Claims (3)
1, a kind of high temperature microwave test cylindrical high Q resonant cavity, comprise cylinder die cavity tube (1), upper end cover (2), bottom end cover (3) and be connected waveguide (4), it is characterized in that, bottom end cover (3) is fixedlyed connected with the lower end of cylinder die cavity tube (1), and upper end cover (2) is connected by coupling bolt (5) with the upper end of cylinder die cavity tube (1); Wherein cylinder die cavity tube (1) is made up of chamber tube skin (11) and chamber tube internal layer (12), upper end cover (2) is made up of upper end cover skin (21) and upper end cover internal layer (22), bottom end cover (3) is made up of bottom end cover skin (31) and bottom end cover internal layer (32), connects waveguide (4) and is connected in sequence by high temperature waveguide (41), heat insulation waveguide (42) and cooling waveguide (43); Described chamber tube skin (11), upper end cover skin (21) and bottom end cover skin (31) are made by the high temperature resistant propping material of thick-layer, and described chamber tube internal layer (12), upper end cover internal layer (22) and bottom end cover internal layer (32) are made by the high temperature resistant precious metal material of thin layer; Described chamber tube internal layer (12), upper end cover internal layer (22) and bottom end cover internal layer (32) are close to chamber tube skin (11), upper end cover skin (21) and bottom end cover skin (31) respectively; Have two coupling apertures (23) in upper end cover (2) appropriate location, two connection waveguides (4) embed upper end cover skin (21) propping material of upper end cover (2) respectively and fixedly connected with the upper end cover internal layer (22) that corresponding coupling aperture (23) is located.
2, high temperature microwave test cylindrical high Q resonant cavity according to claim 1, it is characterized in that, the high temperature resistant propping material of described thick-layer is that heat conductivility is good and be easy to material processed, and the high temperature resistant precious metal material of described thin layer is that fusing point is higher than 1000 ℃ and have the material of excellent conductive performance.
3, high temperature microwave test cylindrical high Q resonant cavity according to claim 1 is characterized in that, the high temperature resistant propping material of described thick-layer is a graphite, and the high temperature resistant precious metal material of described thin layer is a platinum-rhodium alloy.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101813727A (en) * | 2010-04-23 | 2010-08-25 | 电子科技大学 | Cylindrical waveguide resonant cavity |
| CN103390787A (en) * | 2013-07-15 | 2013-11-13 | 中国科学院高能物理研究所 | High-power microwave testing platform |
| CN104155527A (en) * | 2014-07-29 | 2014-11-19 | 北京无线电计量测试研究所 | Detection method of material of X wave band quasi-optical cavity and detection method of dielectric constant thereof |
| CN117347730A (en) * | 2023-12-05 | 2024-01-05 | 电子科技大学 | Inversion method of relative complex dielectric constant under material ablation volatilization |
-
2007
- 2007-10-30 CN CNB2007100503477A patent/CN100567999C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101813727A (en) * | 2010-04-23 | 2010-08-25 | 电子科技大学 | Cylindrical waveguide resonant cavity |
| CN101813727B (en) * | 2010-04-23 | 2012-07-18 | 电子科技大学 | Cylindrical waveguide resonant cavity |
| CN103390787A (en) * | 2013-07-15 | 2013-11-13 | 中国科学院高能物理研究所 | High-power microwave testing platform |
| CN104155527A (en) * | 2014-07-29 | 2014-11-19 | 北京无线电计量测试研究所 | Detection method of material of X wave band quasi-optical cavity and detection method of dielectric constant thereof |
| CN104155527B (en) * | 2014-07-29 | 2017-05-17 | 北京无线电计量测试研究所 | Detection method of material of X wave band quasi-optical cavity and detection method of dielectric constant thereof |
| CN117347730A (en) * | 2023-12-05 | 2024-01-05 | 电子科技大学 | Inversion method of relative complex dielectric constant under material ablation volatilization |
| CN117347730B (en) * | 2023-12-05 | 2024-02-20 | 电子科技大学 | Inversion method of relative complex dielectric constant under material ablation volatilization |
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